Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 8, Issue 5, 9 March 1972
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Volume 8, Issue 5
9 March 1972
Gain and noise figure of GaAs transferred-electron amplifiers at 34 GHz
- Author(s): S. Baskaran and P.N. Robson
- Source: Electronics Letters, Volume 8, Issue 5, p. 109 –110
- DOI: 10.1049/el:19720079
- Type: Article
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–110
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Experimental results obtained from supercritical c.w. GaAs transferred-electron reflection amplifiers at about 34 GHz are reported. Gains in excess of 20 dB have been observed with typical (gain)½×bandwidth products of 1.0–1.5GHz. The best noise figure is 18 dB, and this parameter is shown to be sensitive to the doping profile. The output power for 1 dB gain compression is typically 2.5–3.0 mW.
Paraboloidal-reflector illumination with conical scalar horns
- Author(s): M.S. Narasimhan and Y.B. Malla
- Source: Electronics Letters, Volume 8, Issue 5, p. 111 –112
- DOI: 10.1049/el:19720080
- Type: Article
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This letter describes a systematic procedure for calculating the half flare angle of a conical scalar horn, illuminating a paraboloidal reflector of known f/D ratio, with a view to realising a prescribed sidelobe level for the secondary radiation.
Ternary pseudonoise sequences
- Author(s): D.H. Green and R.G. Kelsch
- Source: Electronics Letters, Volume 8, Issue 5, p. 112 –113
- DOI: 10.1049/el:19720081
- Type: Article
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–113
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A simple criterion is derived to determine when the auto-correlation function of a ternary-feedback shift-register sequence is zero. This permits the isolation of several types of pseudonoise sequences, including the well known maximal-length sequences as well as many other varieties. Some of these sequences are seen to approximate to white noise even more closely than the familiar maximal-length type.
Some Boolean matrix operators
- Author(s): C.R. Edwards
- Source: Electronics Letters, Volume 8, Issue 5, p. 113 –115
- DOI: 10.1049/el:19720082
- Type: Article
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The Boolean matrices employed here were first described by J.O. Campeau, and were used to analyse swtiching and counting circuits. This letter describes their use in the manipulation of Boolean functions, and also a method whereby any function may be re-expressed in terms of any logical combination of its defining variables. Such manipulations, it is shown, may be applied to a number of functions simultaneously, and leads to valuable techniques in logic-network synthesis.
Delay-stabilised variable oscillator
- Author(s): M.J. Underhill
- Source: Electronics Letters, Volume 8, Issue 5, p. 115 –117
- DOI: 10.1049/el:19720083
- Type: Article
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An oscillator has been devised which can be continuously tuned over a 2 : 1 frequency range, and which has a stability and spectral purity approaching that of a quartz-crystal oscillator. A Pal glass delay line is used, with a phase detector in a feedback arrangement, to phase-lock a voltage-controlled oscillator between 3 and 6 MHz. The frequency stability is, in the limit, determined only by the phase stability of the delay.
Frequency-stability improvement in a klystron stabilised by a superconducting cavity
- Author(s): J. Bénard ; J.J. Jimenez ; P. Sudraud ; Nguyen Tuong Viet
- Source: Electronics Letters, Volume 8, Issue 5, p. 117 –118
- DOI: 10.1049/el:19720084
- Type: Article
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–118
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The measurements of the short-term and long-term stability of an X band klystron, stabilised by a high-Q-factor super-conducting cavity, show that this signal has a stability of 3 parts in 1012 for a period of measurement of 10 s and a frequency shift of 1.7 Hz during 30 min. These performances have been obtained by improving the operating parameters of the oscillator.
Junction-temperature measurement of IMPATT diodes
- Author(s): N.D. Kenyon and F.J. D'Alessio
- Source: Electronics Letters, Volume 8, Issue 5, p. 118 –119
- DOI: 10.1049/el:19720085
- Type: Article
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–119
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The breakdown voltage VB of an IMPATT diode is a function of the junction temperature. Pulse techniques are applied to measure VB directly during actual operation, thus giving the temperature within an accuracy of a few per cent. The method also provides a display of 'space-charge resistance at the operating temperature.
Modification of Gunn instabilities in coplanar diodes by variation of the contact depth
- Author(s): D. Boccon-Gibod ; J.L. Teszner ; M. Mautref
- Source: Electronics Letters, Volume 8, Issue 5, p. 119 –120
- DOI: 10.1049/el:19720086
- Type: Article
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–120
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The influence of the field singularity of the edge of the cathode of a Gunn diode in a coplanar structure is considered.
Even-and odd-mode guide wavelengths of coupled lines in microstrip
- Author(s): J.W. Gould and E.C. Talboys
- Source: Electronics Letters, Volume 8, Issue 5, p. 121 –122
- DOI: 10.1049/el:19720087
- Type: Article
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Measurements have been made of the even- and odd-mode guide wavelengths of coupled microstrip lines on alumina between 1 and 12 GHz. Both modes show a linear relationship of negative slope between normalised wavelength and frequency.
Suppression of Gunn-domain oscillations in thin GaAs diodes with dielectric surface loading
- Author(s): K.R. Hofmann and H. 't Lam
- Source: Electronics Letters, Volume 8, Issue 5, p. 122 –124
- DOI: 10.1049/el:19720088
- Type: Article
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The suppression of Gunn oscillations by dielectric surface loading of a transversely thin diode has been investigated in a special configuration which eliminates the uncertainties of earlier experiments.
Stability theory for thin Gunn diodes with dielectric surface loading
- Author(s): K.R. Hofmann
- Source: Electronics Letters, Volume 8, Issue 5, p. 124 –125
- DOI: 10.1049/el:19720089
- Type: Article
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–125
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The critical nd product for the suppression of Gunn oscillations in transversely thin diodes has been derived as a function of the dielectric surface loading. For permittivities of the dielectric higher than about one and a half times that of the active medium, a saturation of (nd)crit towards the infinite-surface-loading value is found.
Synchronous detuned microwave-oscillator power combiners
- Author(s): G.C. Dalman and C.A. Lee
- Source: Electronics Letters, Volume 8, Issue 5, p. 125 –127
- DOI: 10.1049/el:19720090
- Type: Article
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–127
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The feasibility of a new technique of combining powers of microwave oscillators which have stable large-signal locking characteristics has been demonstrated. Power addition to signals an order of magnitude higher has been accomplished.
Acoustic-surface-wave properties of Bi12GeO20
- Author(s): R.G. Pratt ; G. Simpson ; W.A. Crossley
- Source: Electronics Letters, Volume 8, Issue 5, p. 127 –128
- DOI: 10.1049/el:19720091
- Type: Article
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–128
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Surface-wave velocities, electromechanical-coupling coefficients and power-flow angles on the three principal planes of bismuth germanium oxide (Bi12GeO20) are presented as a function of the propagation direction, good agreement being obtained between calculated and measured values.
Natural phase compensation in continuously wound delay lines using a split-core configuration
- Author(s): Daniel G. Maeder
- Source: Electronics Letters, Volume 8, Issue 5, p. 128 –129
- DOI: 10.1049/el:19720092
- Type: Article
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–129
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The balanced-type delay line described has the property that longitudinal magnetic coupling drops off rapidly. The small residual phase distortion is compensated for by winding capacitances, whose overall effect depends on an adjustable longitudinal airgap. Experiments with lines having aspect ratios l/a < 100 gave delay/rise ratios of up to about 30.
Dependence of transverse spreading velocity of a high-field domain in a GaAs bulk element on the bias electric field
- Author(s): K. Tomizawa and S. Kataoka
- Source: Electronics Letters, Volume 8, Issue 5, p. 130 –131
- DOI: 10.1049/el:19720093
- Type: Article
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–131
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The transverse spreading velocity of a high-field domain, triggered by a pair of capacitive electrodes at the middle of a planar-type GaAs bulk element, was measured as a function of the bias electric field. The results show that the velocity increases from about 108 to 109 cm/s with an increase of the bias electric field from 2.8 to 3.15 kV/cm.
22 μs S band delay line
- Author(s): M.F. Lewis
- Source: Electronics Letters, Volume 8, Issue 5, p. 131 –132
- DOI: 10.1049/el:19720094
- Type: Article
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–132
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A 22 μs acoustic delay line has been produced on spinel with a centre frequency of 2900 MHz, a bandwidth of 200 MHz and a total insertion loss of 44 dB.
Direct method of obtaining capacitance from finite-element matrices
- Author(s): P. Daly and J.D. Helps
- Source: Electronics Letters, Volume 8, Issue 5, p. 132 –133
- DOI: 10.1049/el:19720095
- Type: Article
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–133
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The finite-element representation of the 2-dimensional Laplace equation is considered. From the matrices developed, a simple matrix method of obtaining the capacitance per unit length of uniform transmission lines is demonstrated.
Active RC realisation of rational immittances
- Author(s): Rolf Schaumann
- Source: Electronics Letters, Volume 8, Issue 5, p. 133 –134
- DOI: 10.1049/el:19720096
- Type: Article
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133
–134
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A modification of Sandberg's active-RC-synthesis procedure for arbitrary real rational immittances is presented, which results in a simpler circuit using a smaller number of passive elements.
Implementation of 2-dimensional Walsh transforms for pattern recognition
- Author(s): D.G. Wadbrook and D.J. Woollons
- Source: Electronics Letters, Volume 8, Issue 5, p. 134 –136
- DOI: 10.1049/el:19720097
- Type: Article
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Pattern-recognition applications of binary-valued orthogonal transforms require only a small number of the possible transform-domain coefficients to be calculated. This letter describes hardware capable of calculating a subset of Walsh-transform coefficients from 2-dimensional patterns.
Improved coupled-line microstrip circuit for L and S band oscillators
- Author(s): A. Rosen ; J.F. Reynolds ; J.J. Thomas
- Source: Electronics Letters, Volume 8, Issue 5, p. 136 –137
- DOI: 10.1049/el:19720098
- Type: Article
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The coupled-bar microstrip circuit described here utilises a TRAPATT diode, and is ideally suited for systems applications such as i.f.f. transponder-transmitter sources and airborne altimeter sources. It is compact and rugged and allows high-efficiency operation. This circuit has delivered 150 W with 30% efficiency at L band, 150 W with 26% efficiency at 3.5 GHz, and 120 W with 19% efficiency at 3.85 GHz. The devices were operated with 0.5 μs pulses up to 1% duty cycle in a near jitterfree operation.
Noise performance of InP reflection amplifiers in Q band
- Author(s): S. Baskaran and P.N. Robson
- Source: Electronics Letters, Volume 8, Issue 5, p. 137 –138
- DOI: 10.1049/el:19720099
- Type: Article
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–138
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Experimental results of reflection gain and noise figure for c.w. circuit-stabilised InP amplifiers at about 33 GHz are reported. A noise figure of 7.5 dB is observed at 23 dB gain.
Partitioning of Boolean functions by variable complementation
- Author(s): C.R. Edwards
- Source: Electronics Letters, Volume 8, Issue 5, p. 138 –140
- DOI: 10.1049/el:19720100
- Type: Article
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–140
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A method is presented which enables any Boolean function(s), defined on n variables, to be partitioned. Each partition so extracted is independent of a selected number of the defining variables, and hence each member of such a partition may be defined on the remaining variables. The method is applicable to logic-network synthesis, and its exhaustive application enables a fast implementation of the Quine-McCluskey1–3 minimisation algorithm.
Erratum: Small-signal equivalent π networks for carrier generation–recombination–trapping at imperfection centres in semiconductors
- Author(s): C.T. Sah
- Source: Electronics Letters, Volume 8, Issue 5, page: 140 –140
- DOI: 10.1049/el:19720101
- Type: Article
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