Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 8, Issue 2, 27 January 1972
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Volume 8, Issue 2
27 January 1972
Two-phase m.n.o.s. charge-coupled device
- Author(s): C.A.T. Salama
- Source: Electronics Letters, Volume 8, Issue 2, p. 21 –22
- DOI: 10.1049/el:19720017
- Type: Article
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A 2-phase charge-coupled device (c.c.d.) is proposed. It makes use of charge storage in an m.n.o.s. structure to define in the silicon substrate the asymmetrical potential wells required for unidirectional charge flow. The fabrication and operation of the device are described. The structure permits substantial simplification of the fabrication method as compared with other c.c.d.s.
N-poles and nullator-norator circuits
- Author(s): Yu. Rekhepapp
- Source: Electronics Letters, Volume 8, Issue 2, p. 22 –23
- DOI: 10.1049/el:19720018
- Type: Article
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A possible classification for linear lumped circuits is introduced. Assuming any circuit to be represented by a graph with nullators, with norators and ordinary 2-poles as its branches, the properties of the nullator-norator subgraph have been investigated and the main results are reported.
Modified bipolar-phototransistor structure
- Author(s): F.E. Holmes and C.A.T. Salama
- Source: Electronics Letters, Volume 8, Issue 2, p. 23 –24
- DOI: 10.1049/el:19720019
- Type: Article
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–24
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A modified bipolar-phototransistor structure suitable for use in large imaging arrays is described. The structure exhibits an improved capacitance ratio and reduced dark current. Despite a reduced spectral sensitivity, the proposed device has performance advantages compared with those of the standard phototransistor when used in the charge-storage mode.
Punchthrough oscillator—new microwave solid-state source
- Author(s): N.B. Sultan and G.T. Wright
- Source: Electronics Letters, Volume 8, Issue 2, p. 24 –26
- DOI: 10.1049/el:19720020
- Type: Article
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The performances of silicon p-n-p punchthrough oscillators have been studied experimentally at X band in a coaxial cavity. A range of mechanical tuning of more than 3 GHz has been obtained. The oscillator performance at current densities up to about 200 A/cm has been related to the measured diode impedance. The wide-active-band, sensitive-electronic-tuning and low-noise properties of the punchthrough oscillator suggest promising applications as a microwave signal source, as a local oscillator, in f.m.-c.w. radar and in a.f.c.
Sensitivity invariants for active lumped/distributed networks
- Author(s): M.N.S. Swamy ; Champa Bhushan ; K. Thulasiraman
- Source: Electronics Letters, Volume 8, Issue 2, p. 26 –27
- DOI: 10.1049/el:19720021
- Type: Article
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The invariant nature of the sum of the sensitivities of network functions of a general linear active lumped/distributed network is established. Results of Holt and Fidler on summed sensitivities are extended to networks containing tapered lines, v.c.t.s and c.v.t.s simultaneously.
Modal matching applied to a discontinuity in a planar surface waveguide
- Author(s): P.J.B. Clarricoats and A.B. Sharpe
- Source: Electronics Letters, Volume 8, Issue 2, p. 28 –29
- DOI: 10.1049/el:19720022
- Type: Article
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A modal-matching method is used to evaluate the transmission and reflection coefficients at a junction between two planar surface waveguides. Results are obtained for parameters which represent the junction between a solid-state laser and a planar optical waveguide. Favourable comparison is made with results obtained from an integral-equation method.
Synthesis of synchronous sequential machines by means of given memory elements
- Author(s): M. Diaz ; P. Azema ; M. Courvoisier ; J.P. Richard
- Source: Electronics Letters, Volume 8, Issue 2, p. 29 –30
- DOI: 10.1049/el:19720023
- Type: Article
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A systematic method for the synthesis of sequential machines by means of given memory elements is described. This method, presented here using J—K master-slave flip-flops, allows a straightforward synthesis from the transition table or the transition diagram. Examination of the table or diagram leads directly to the Boolean equations of J and K inputs without using any intermediate step.
Influence of the second harmonic of a resonator on the parameters of a Gunn generator for transit and hybrid modes
- Author(s): M.E. Levinshtein ; L.S. Pushkaroeva ; M.S. Shur
- Source: Electronics Letters, Volume 8, Issue 2, p. 31 –33
- DOI: 10.1049/el:19720024
- Type: Article
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The results of computer calculations of Gunn-oscillator performance are given for a bias voltage containing the fundamental and the second harmonic. The dependence of the efficiency on the bias voltage, harmonic amplitudes, phase difference, doping level and frequency is presented.
Relationship between crossmodulation and intermodulation
- Author(s): H.C. de Graaff and J. te Winkel
- Source: Electronics Letters, Volume 8, Issue 2, p. 33 –34
- DOI: 10.1049/el:19720025
- Type: Article
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When the frequency dependence of the 3rd-order distortions in a nonlinear system is taken into account, it is found that the well known fixed relationship between the (2q-p) inter-modulation product and the crossmodulation no longer exists. Owing to the same frequency dependence, the crossmodulation from n ‘unwanted’ signals, e.g. in a c.a.t.v. system, is not simply n times the crossmodulation from a single unwanted signal, but the n components have to be added vectorially.
Design of thinned phased arrays
- Author(s): Erik Mattsson
- Source: Electronics Letters, Volume 8, Issue 2, p. 34 –35
- DOI: 10.1049/el:19720026
- Type: Article
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A new method for determining the element position in a phased array is presented, only one array factor being calculated in each step. It is thereby possible to design larger arrays than can be designed using other methods.
X and Ku band GaAs m.e.s.f.e.t.
- Author(s): W. Baechtold ; W. Walter ; P. Wolf
- Source: Electronics Letters, Volume 8, Issue 2, p. 35 –37
- DOI: 10.1049/el:19720027
- Type: Article
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A GaAs Schottky-barrier f.e.t. (m.e.s.f.e.t.) with a 1 μm gate has been built, which is suitable for X band and Ku band applications. The unilateral power gain over the X band is above 9 dB and the noise figure is only 5 dB at 10 GHz.
Intersymbol interference in duobinary systems
- Author(s): R. Srinivasan
- Source: Electronics Letters, Volume 8, Issue 2, p. 37 –38
- DOI: 10.1049/el:19720028
- Type: Article
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An upper bound for the error probability due to intersymbol interference and Gaussian noise is calculated for duobinary signalling systems. The duobinary system with twice the binary signalling speed has an error rate in excess of that of a binary system using identical filters.
Scheme for the elimination of redundant model complexity
- Author(s): Pedro A. Villalaz and Robert Spence
- Source: Electronics Letters, Volume 8, Issue 2, p. 38 –40
- DOI: 10.1049/el:19720029
- Type: Article
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To assist in the reduction of device-model complexity to a level which is adequate for a given network environment and a given tolerance on network response, a method is described whereby model elements are automatically annihilated according to their effect on network response. This process of ‘model pessimisation’ is illustrated by an example involving an operational amplifier.
Programmable correlation using parametric interactions in acoustic surface waves
- Author(s): D.P. Morgan ; B.J. Darby ; J.H. Collins
- Source: Electronics Letters, Volume 8, Issue 2, p. 40 –42
- DOI: 10.1049/el:19720030
- Type: Article
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Real-time correlation of 31 chip binary p.s.k. waveforms has been obtained using nonlinear interactions of acoustic surface waves, with a signal bandwidth of 8 MHz. A dynamic range of 20 dB was obtained. Calculations indicate that a dynamic range of 50 dB should be obtainable quite readily, making the device attractive for adaptive signal processing.
Steady-state values for a class of multivariable feedback systems
- Author(s): F. Fallside and H. Seraji
- Source: Electronics Letters, Volume 8, Issue 2, p. 42 –43
- DOI: 10.1049/el:19720031
- Type: Article
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A simple expression is given for the steady-state values of the control inputs, the states and the outputs of multivariable systems with unity-rank feedback. The method allows a fast calculation of the steady-state values for a variety of feedback matrices without repeated matrix inversion, and is thus well suited to computer-aided control-system design.
Active bandpass network with only resistors as passive elements
- Author(s): F. Capparelli and A. Liberatore
- Source: Electronics Letters, Volume 8, Issue 2, p. 43 –44
- DOI: 10.1049/el:19720032
- Type: Article
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This letter describes a technique which employs the lowpass properties of transistors to realise a high-Q factor selective amplifier with optimum sensitivity. It requires only resistors as passive elements and transistors as active devices. The realisation of the circuit is optimally insensitive to variations in the gain of transistors and provides for independent adjustment of the amplifier Q factor.
Television display of HCN laser radiation
- Author(s): D.W.E. Fuller ; N.R. Cross ; W.M. Wreathall ; I.C. Chaplin
- Source: Electronics Letters, Volume 8, Issue 2, p. 44 –45
- DOI: 10.1049/el:19720033
- Type: Article
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A 25 frame/s display of 337 μm radiation, from a low-power (0.3 mW) HCN laser, has been obtained for the first time. The vidicon tube incorporates a 16 mm-diameter triglycine-sulphate target and its sensitivity to 337 μm radiation has not been optimised.
Liquid-crystal display with electrically controlled birefringence
- Author(s): G. Assouline ; M. Hareng ; E. Leiba ; M. Roncillat
- Source: Electronics Letters, Volume 8, Issue 2, p. 45 –46
- DOI: 10.1049/el:19720034
- Type: Article
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–46
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Applications of electrically controlled birefringence of nematic liquid crystals to display devices are tested with a matrix-type letter-and-number indication system. Such a cell, with 35 × 35 elements, was realised without storage circuits. The display shows bright colours, especially red and green, for low operating voltages (< 20 V). The feasibility of a liquid-crystal matrix display with 100 × 100 points has been demonstrated in the laboratory.
Microstrip end effects
- Author(s): D.S. James and S.H. Tse
- Source: Electronics Letters, Volume 8, Issue 2, p. 46 –47
- DOI: 10.1049/el:19720035
- Type: Article
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Calculated data, which extend the previous results of Farrar and Adams, are presented for the microstrip end effect as a function of width and substrate permittivity. With a quasistatic approximation, the excess capacitance associated with the open end was determined utilising the method of moments. Good experimental agreement was observed.
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