Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 8, Issue 21, 19 October 1972
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Volume 8, Issue 21
19 October 1972
50 GHz gallium-arsenide IMPATT oscillator
- Author(s): G. Gibbons ; J.J. Purcell ; P.R. Wickens ; H.S. Gokgor
- Source: Electronics Letters, Volume 8, Issue 21, p. 513 –514
- DOI: 10.1049/el:19720374
- Type: Article
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p.
513
–514
(2)
Gallium-arsenide diffused-junction IMPATT diodes have been operated in F band (40–60 GHz), producing output powers up to 140 mW, with a conversion efficiency greater than 7%.
Specifications of threshold-logic gates for optimum s.s.i. logic packaging
- Author(s): S.L. Hurst
- Source: Electronics Letters, Volume 8, Issue 21, p. 514 –515
- DOI: 10.1049/el:19720375
- Type: Article
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p.
514
–515
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Various specifications for individual threshold-logic gates have been proposed to realise a maximum number of possible threshold-logic functions. This work is extended here to consider the optimum collection of such gates within conventional small-scale integrated-circuit package limitations.
Fluctuations in noise level
- Author(s): F. Berz
- Source: Electronics Letters, Volume 8, Issue 21, p. 515 –517
- DOI: 10.1049/el:19720376
- Type: Article
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p.
515
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Consideration is given to the equations for the r.m.s. fluctuations of noise power, when the noise is random, is stationary and follows a Gaussian amplitude distribution. The results are briefly compared with published measurements, most of which show much larger fluctuations, both for white noise and 1/f noise.
Numerical analysis of simultaneous diffusion of several impurities in silicon and silicon dioxide
- Author(s): J. Monnier ; M. Stern ; A. Maffei ; D. Vandorpe
- Source: Electronics Letters, Volume 8, Issue 21, p. 517 –518
- DOI: 10.1049/el:19720377
- Type: Article
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p.
517
–518
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An iterative method to simulate the diffusion phenomena in semiconductor technology is presented. With the computer programs described here, it is possible to obtain accurate values of the impurity concentrations in semiconductor devices directly from technological parameters, such as diffusion temperatures and various elementary times in the process.
Inverse of elements of a Galois field
- Author(s): George I. Davida
- Source: Electronics Letters, Volume 8, Issue 21, p. 518 –520
- DOI: 10.1049/el:19720378
- Type: Article
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p.
518
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Parallel implementation of arithmetic operations in extension fields is mandatory if one is to consider the use of error-correcting codes in digital systems, particularly in integrated-circuit memory arrays. A new method for the inversion of elements of a finite field is presented. This method is particularly suitable for parallel implementation.
Cadmium-doped indium-phosphide light-emitting diode
- Author(s): M.G. Astles and E.W. Williams
- Source: Electronics Letters, Volume 8, Issue 21, p. 520 –521
- DOI: 10.1049/el:19720379
- Type: Article
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p.
520
–521
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Indium-phosphide light-emitting diodes have been prepared by liquid epitaxy with only one run and only one added dopant (cadmium). The diode-power efficiency was 0.07% at 300 K.
Piezoelectric surface-wave calculations in multilayered anisotropic media
- Author(s): G.A. Armstrong and S. Crampin
- Source: Electronics Letters, Volume 8, Issue 21, p. 521 –522
- DOI: 10.1049/el:19720380
- Type: Article
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p.
521
–522
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A computer program has been developed which calculates the dispersion characteristics of surface waves propagating in a multilayered structure, where each layer may have any piezoelectric, dielectric and elastic anisotropy, and be arbitrarily aligned. Two examples of such calculations are presented.
New active RC configuration for realising a medium-selectivity notch filter
- Author(s): Ahmed M. Soliman
- Source: Electronics Letters, Volume 8, Issue 21, p. 522 –524
- DOI: 10.1049/el:19720381
- Type: Article
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A new configuration for activating the symmetrical twin-T network to realise a medium-selectivity notch filter is given. The ω0 and Q factor sensitivities with respect to all circuit components are very low. The frequency-limitation equations for the circuit are derived, based on the 1-pole rolloff model of the operational amplifier.
Simple multifrequency-tone detector
- Author(s): A.D. Proudfoot
- Source: Electronics Letters, Volume 8, Issue 21, p. 524 –525
- DOI: 10.1049/el:19720382
- Type: Article
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p.
524
–525
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An outline is given of a simple method of detecting digitally encoded multifrequency tones.
Generalised interdigital helical filter
- Author(s): L.F. Lind and R.E. Massara
- Source: Electronics Letters, Volume 8, Issue 21, p. 525 –526
- DOI: 10.1049/el:19720383
- Type: Article
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p.
525
–526
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A new helical-filter structure is proposed, having as its model the generalised interdigital microwave network. The structure consists of two rows of resonators, with crosscoupling between rows. This configuration, which can be implemented at low cost, can realise a wide variety of responses. A design example of a linear phase filter is given.
Study of pulse distortion in Selfoc fibres
- Author(s): D. Gloge ; E.L. Chinnock ; K. Koizumi
- Source: Electronics Letters, Volume 8, Issue 21, p. 526 –527
- DOI: 10.1049/el:19720384
- Type: Article
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p.
526
–527
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A 100 ps gallium-arsenide laser pulse was observed to increase in width by only 100 ps in 70 m of a fibre with an internal refractive-index gradient (Selfoc). This is shown to be in satisfactory agreement with a simple ray analysis which neglects the index discontinuity at the fibre wall.
Dispersion in a low-loss multimode fibre measured at three wavelengths
- Author(s): D. Gloge ; E.L. Chinnock ; R.D. Standley ; W.S. Holden
- Source: Electronics Letters, Volume 8, Issue 21, p. 527 –529
- DOI: 10.1049/el:19720385
- Type: Article
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p.
527
–529
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Short pulses from mode-locked lasers (neodynium/yttrium-iron-garnet and krypton) were used to measure mode and material dispersion in 20 m of a multimode fibre at 1060, 647 and 568 nm. Uniform illumination of the cone of acceptance at the input caused a 200 ps pulse to broaden to 400 ps.
Effects of geometrical parameters of a microstrip on its dispersive properties
- Author(s): G. Essayag and B. Sauve
- Source: Electronics Letters, Volume 8, Issue 21, p. 529 –530
- DOI: 10.1049/el:19720386
- Type: Article
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p.
529
–530
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This letter investigates the influence of geometrical parameters of a shielded microstrip on its fundamental mode. It points out the limits of box sizes, above which the shielded structure behaves like an unshielded one. Two known numerical methods, based on a rigorous hybrid-mode formulation, are used and compared.
Floating-point and multibit-increment digital-differential-analyser structures
- Author(s): G. Philokyprou and C. Halatsis
- Source: Electronics Letters, Volume 8, Issue 21, p. 531 –532
- DOI: 10.1049/el:19720387
- Type: Article
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p.
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The possibilities of establishing digital-differential-analyser structures possessing both high solution accuracies and automatic scaling are examined. Two such structures are given, together with their performance characteristics. The second of these, the dynamic-increment digital differential analyser, introduces the concept of a digital differential analyser with the length of its incremental output dynamically varying during the solution process.
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