Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 7, Issue 10, 20 May 1971
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Volume 7, Issue 10
20 May 1971
Pure time delay of an analogue signal
- Author(s): H.R. Beastall and A. Scanlan
- Source: Electronics Letters, Volume 7, Issue 10, p. 237 –238
- DOI: 10.1049/el:19710160
- Type: Article
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–238
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A method of delaying an analogue signal is described. The method has applications in the simulation of transport lags on an analogue computer.
Myoelectric-control system for arm-hand prosthesis
- Author(s): A. Stein
- Source: Electronics Letters, Volume 7, Issue 10, page: 238 –238
- DOI: 10.1049/el:19710161
- Type: Article
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A control system which uses myoelectric potentials to address commands in a read-only memory is described. A discussion of a conceptual prosthetic unit is included.
New logic functional device using transverse spreading of a high-field domain in n type GaAs
- Author(s): K. Tomizawa ; M. Kawashima ; S. Kataoka
- Source: Electronics Letters, Volume 7, Issue 10, p. 239 –240
- DOI: 10.1049/el:19710162
- Type: Article
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New functional devices making use of the transverse spreading of a high-field domain in an H shaped n type GaAs sample are proposed, with some experimental results. It is expected that such devices will perform complex logic operations, such as a modification of Sheffer's stroke at extremely high speed.
Characteristics of bulk indium-phosphide microwave oscillators
- Author(s): D.H. Paxman and R.J. Tree
- Source: Electronics Letters, Volume 7, Issue 10, p. 240 –241
- DOI: 10.1049/el:19710163
- Type: Article
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Observations of a frequency-length relationship for bulk InP microwave devices in the 10–100 μm thickness range are reported. A threshold field of 7–10 kV/cm is found for the devices, and the frequency appears to be determined by an average transit velocity of 2×107 cm/s.
Concept of scattering matrix applied to periodically repeated distributed systems
- Author(s): J.J. Hupert
- Source: Electronics Letters, Volume 7, Issue 10, p. 241 –243
- DOI: 10.1049/el:19710164
- Type: Article
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In a periodical distributed circuit or system, the scattering matrix of the repetitive link may readily serve to determine the Floquet coefficient and the characteristic impedance of the system. The data of the scattering matrix allow instant determination of the propagative and attenuative frequency (energy) bands.
Improved method for calculation of net impurity-doping profile of double-diffused transistors
- Author(s): F. Durbin
- Source: Electronics Letters, Volume 7, Issue 10, p. 243 –244
- DOI: 10.1049/el:19710165
- Type: Article
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–244
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A computational technique is described, the purpose of which is to obtain an effective doping profile for double-diffused transistors, using current manufacturers data as starting parameters. The guiding principle in this method is to obtain a doping profile with a calculated base region in full agreement with junction-depth measurements.
Inclusion of diffusion in the space-charge theory of Kino and Robson
- Author(s): W. Heinle
- Source: Electronics Letters, Volume 7, Issue 10, p. 245 –246
- DOI: 10.1049/el:19710166
- Type: Article
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Formulas are presented for the dispersion relationship and the boundary condition concerning the space-charge wave propagation under the influence of diffusion in Gunn-effect semiconductors with finite thickness. For small amplitude change per wavelength, the frequency limitations of the various modes are investigated.
Experimental verification of bistable switching with Gunn diodes
- Author(s): H. Thim
- Source: Electronics Letters, Volume 7, Issue 10, p. 246 –247
- DOI: 10.1049/el:19710167
- Type: Article
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It has been demonstrated experimentally that high-quality Gunn diodes exhibit switching between two stable states. One of them is the ohmic state below threshold. The other one is a low-current high-voltage state and is associated with a stationary high-field layer at the anode.
Comment on ‘Pulse-rate exponential function generator’
- Author(s): D. Taylor ; S.J. Bhatt ; D.N. Rao
- Source: Electronics Letters, Volume 7, Issue 10, p. 247 –248
- DOI: 10.1049/el:19710168
- Type: Article
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–248
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The letter comments on the exponential function generator described recently by Martin and Shiner and indicates that, in nuclear instrumentation, it can meet a real requirement in spite of its limited dynamic range. When a large dynamic range is required, a better method is available.
Rational delay-function approximations to ex
- Author(s): L. Eisenberg
- Source: Electronics Letters, Volume 7, Issue 10, p. 248 –249
- DOI: 10.1049/el:19710169
- Type: Article
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p.
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–249
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The application of various-order Padé approximants to the ideal delay function e−τs is presented. The relationship between Padé approximants and Lagrange's continued-fraction expansion as applied to e−τs is examined. The unit step response of e−τs is examined with emphasis on the risetime/delay-time ratio and the percentage peak overshoot and undershoot.
Diffraction coefficients for a discontinuity in curvature
- Author(s): T.B.A. Senior
- Source: Electronics Letters, Volume 7, Issue 10, p. 249 –250
- DOI: 10.1049/el:19710170
- Type: Article
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p.
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–250
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A particular choice of model of a surface displaying a discontinuity in curvature permits a high-frequency asymptotic development of the surface field when a plane electromagnetic wave is incident. The diffraction coefficients are deduced from this, and the results differ significantly from the physical-optics estimates.
Time-invariant multivariable linear systems: modal structure and system similarity
- Author(s): B. Porter
- Source: Electronics Letters, Volume 7, Issue 10, p. 250 –251
- DOI: 10.1049/el:19710171
- Type: Article
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250
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The mode-controllability and mode-observability structures of time-invariant multivariable linear systems governed by state-space equations which give rise to system-similar matrices are investigated.
Common-mode rejection of differential amplifiers at high frequencies
- Author(s): K.B. Klaassen
- Source: Electronics Letters, Volume 7, Issue 10, p. 251 –253
- DOI: 10.1049/el:19710172
- Type: Article
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p.
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The letter presents the results of an investigation concerning a differential-amplifier configuration with the highest guaranteed common-mode rejection for high frequencies. The causes and the magnitude of the limitation of the rejection at high frequencies are dealt with.
Surface-wave diffraction on LiNbO3
- Author(s): J.C. Crabb ; J.D. Maines ; N.R. Ogg
- Source: Electronics Letters, Volume 7, Issue 10, p. 253 –255
- DOI: 10.1049/el:19710173
- Type: Article
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–255
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Radiation patterns from transducers on the Y face of LiNbO3 have been measured for propagation in several directions. It is demonstrated here that simple results may be obtained from a detailed Green's-function analysis which allow important practical information to be obtained, such as the Fresnel distance and far-field beam width as functions of the orientation of the transducer normal.
Effect of tolerances on the performance of microstrip parallel-coupled bandpass filters
- Author(s): R.J. Roberts
- Source: Electronics Letters, Volume 7, Issue 10, p. 255 –257
- DOI: 10.1049/el:19710174
- Type: Article
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p.
255
–257
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The response of microstrip parallel-coupled bandpass filters has been calculated, and the effect of the tolerances on a microstrip realisation on the response given. It is shown that the substrate thickness and the relative electrical lengths of each section are the most critical. A method of compensating for the reduction in bandwidth due to losses is also described.
New high-coupling low-diffraction cut for acoustic surface waves on LiNbO3
- Author(s): A.J. Slobodnik and T.L. Szabo
- Source: Electronics Letters, Volume 7, Issue 10, p. 257 –258
- DOI: 10.1049/el:19710175
- Type: Article
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–258
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The existence of a new high-coupling low-diffraction-loss cut for acoustic surface-wave propagation on LiNbO3 has been theoretically predicted and experimentally verified. The propagation direction lies 16½° from the Z axis with the plate normal 16½° from the negative Y axis.
Computation of dissipation-induced loss distortion in lumped/distributed networks
- Author(s): R.N. Gadenz and G.C. Temes
- Source: Electronics Letters, Volume 7, Issue 10, p. 258 –260
- DOI: 10.1049/el:19710176
- Type: Article
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p.
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An extension of a simple technique for the prediction of dissipation-induced loss distortion is presented. An explicit formula is given for the loss distortion in a linear time-invariant network containing dissipative inductors and capacitors as well as dissipative uniform transmission lines. The formula requires only the analysis of the original and the adjoint dissipationless circuits.
Comment on ‘Rational approximants to the matrix exponential’ [and reply]
- Author(s): R.E. Scraton
- Source: Electronics Letters, Volume 7, Issue 10, p. 260 –261
- DOI: 10.1049/el:19710177
- Type: Article
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The matrix exponential exp(At) may be approximated to in some circumstances by the matrix function φp,q(At), where φp,q(u) is a Padé approximant to exp(u). The approximation breaks down if A has large latent roots, and in this case may be replaced by {φp,q(At/r)}r for some integer r. An error analysis of the latter approximation is given. A reply from the original author follows.
Author's reply to ‘Comment on Rational approximants to the matrix exponential’
- Author(s): V. Zakian
- Source: Electronics Letters, Volume 7, Issue 10, p. 261 –262
- DOI: 10.1049/el:19710178
- Type: Article
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Effects of proton radiation on capacitance/voltage characteristics of m.o.s. capacitors
- Author(s): H.C. Card and K.C. Kao
- Source: Electronics Letters, Volume 7, Issue 10, p. 262 –264
- DOI: 10.1049/el:19710179
- Type: Article
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–264
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The capacitance/bias-voltage characteristics of metal-oxide-semiconductor capacitors have been measured before and after irradiation with 25 MeV protons under various bombardment voltages applied to the gate during irradiation. The radiation-induced charge carriers are trapped in a localised region that extends approximately 300 Å into the oxide layer from the Si-SiO2 interface. The induced space-charge density shows an exponential dependence on the radiation dose and a linear dependence on the bombardment voltage. The effects are independent of the dose rate and appear to approach saturation for a dose of 3.5×1013 protons/cm2 with an effective bonbardment voltage of 5 V.
Simplified power supply for electrodischarge machining at low frequencies
- Author(s): T.W. Shaw
- Source: Electronics Letters, Volume 7, Issue 10, p. 264 –265
- DOI: 10.1049/el:19710180
- Type: Article
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p.
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–265
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Modern electrodischarge-machining apparatus often employs paralleled transistors to switch the higher currents required in the process, while maintaining a fast pulse risetime. This method necessitates complex driving circuitry and the need for careful selection of devices. A simpler circuit, using fast-turnoff thyristors is described, which takes advantage of their high power gain and inherent high current-switching capability. The limitations of the circuitry are explained, and a method for increasing the higher switching-frequency limit of the circuitry is indicated.
Nonlinear feedback equaliser employing a soft limiter
- Author(s): D.P. Taylor
- Source: Electronics Letters, Volume 7, Issue 10, p. 265 –267
- DOI: 10.1049/el:19710181
- Type: Article
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p.
265
–267
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An adaptive feedback equaliser using a soft limiter in the feedback path is briefly described. Curves and figures describing its adaptive behaviour are presented, and a brief comparison with the decision-feedback equaliser, which uses a hard limiter in the feedback path, is made.
Nanosecond baseband optical-diffraction modulator
- Author(s): M.A.R.P. de barros and M.G.F. Wilson
- Source: Electronics Letters, Volume 7, Issue 10, p. 267 –269
- DOI: 10.1049/el:19710182
- Type: Article
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p.
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Latest measurements on an electro-optic diffraction modulator show optical-pulse risetimes of 1.5 ns with a drive of only 25 V and 6 nJ per pulse. The modulator lends itself to integration into thin-film optical circuits and is insensitive to temperature variations. Means of improving the performance still further are available.
State variables and Laguerre series
- Author(s): V. Kukk
- Source: Electronics Letters, Volume 7, Issue 10, p. 269 –270
- DOI: 10.1049/el:19710183
- Type: Article
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p.
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Using the expansion of signals in series of Laguerre functions, the state equations of the system can be written as the state equations of a discrete-time system. These equations can be solved simply by a digital computer. The method is applicable when distributions are permitted as signals.
Improvement of a resonant-transfer circuit by means of a compensating reactance
- Author(s): L. Versfeld
- Source: Electronics Letters, Volume 7, Issue 10, p. 270 –271
- DOI: 10.1049/el:19710184
- Type: Article
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p.
270
–271
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The effective loss Ae of a resonant-transfer circuit containing two lowpass filters and a resonant-transfer switch can be reduced in the passband by inserting a compensating reactance. For a particular circuit, the compensating reactance has been designed and the reduction of Ae has been measured.
Equal-valued-capacitor active-RC-network realisation of a 3rd-order lowpass Butterworth characteristic
- Author(s): L.P. Huelsman
- Source: Electronics Letters, Volume 7, Issue 10, p. 271 –272
- DOI: 10.1049/el:19710185
- Type: Article
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p.
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–272
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The letter describes an active RC network which realises a 3rd-order lowpass Butterworth characteristic. It requires one active element and has the practical advantage that all capacitors have the same value. A design chart is included.
Output pulse characteristics and self mode locking of atmospheric-pressure CO2 lasers
- Author(s): A. Crockor and H.M. Lamberton
- Source: Electronics Letters, Volume 7, Issue 10, p. 272 –273
- DOI: 10.1049/el:19710186
- Type: Article
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Two atmospheric-pressure CO2 pulsed lasers have been operated with discharges and resonators designed for fundamental mode operation. Pulse energies of 50% of the maximum multimode energy have been obtained with pulsewidths in the range 40–80 ns and peak powers in excess of 20 MW. Complete self mode locking has been observed with pulse-widths of less than 3 ns.
Method for phase correction in active RC circuits using two integrators
- Author(s): P.W. Vogel
- Source: Electronics Letters, Volume 7, Issue 10, p. 273 –275
- DOI: 10.1049/el:19710187
- Type: Article
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A method is described for compensating unwanted phase shifts in active dual-integrator RC circuits. The method consists in using identical amplifiers in a suitable configuration.
Q band GaAs f.e.t. amplifier and oscillator
- Author(s): W. Baechtold
- Source: Electronics Letters, Volume 7, Issue 10, p. 275 –276
- DOI: 10.1049/el:19710188
- Type: Article
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GaAs field-effect transistors with a Schottky-barrier gate have been investigated in the frequency range 12–20 GHz. Measurements of the maximum available gain have shown that the devices have much higher gain in this range than has been expected. A 17 GHz oscillator having an output power of 4mW and a 4-stage 14.9GHz amplifier with 16 dB of power gain have been built using stripline technique.
Relationship between cutset and node-pair transformation matrices
- Author(s): K. Thulasiraman and M.N.S. Swamy
- Source: Electronics Letters, Volume 7, Issue 10, p. 276 –277
- DOI: 10.1049/el:19710189
- Type: Article
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In the letter, a necessary and sufficient condition for a cutset matrix to be a node-pair transformation matrix is established.
High-speed binary multiplier
- Author(s): N.G. Kingsbury
- Source: Electronics Letters, Volume 7, Issue 10, p. 277 –278
- DOI: 10.1049/el:19710190
- Type: Article
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A multiplier is described which uses a ‘tree’ of adders to add the partial products, resulting in a considerable increase in speed when the adders have a carry-propagation delay per bit which is appreciably less than the addition delay.
Multidimensional transforms: new technique for the association of variables
- Author(s): D.C. Reddy and N.C. Jagan
- Source: Electronics Letters, Volume 7, Issue 10, p. 278 –279
- DOI: 10.1049/el:19710191
- Type: Article
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Multidimensional Laplace transforms are used to transform the functional series of Volterra into the multidimensional frequency domain. The variables are then associated to reduce the multidimensional transforms to the usual 1-dimensional situation. A new technique for the association of variables is now proposed which overcomes the limitations of the earlier methods.
Contribution to mixer intermodulation distortion of nonlinearity in the diode forward characteristics
- Author(s): R.V. Stewart and J.G. Gardiner
- Source: Electronics Letters, Volume 7, Issue 10, p. 279 –281
- DOI: 10.1049/el:19710192
- Type: Article
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It is shown that nonlinearity in the forward characteristics of Schottky-barrier devices contributes significantly to the levels of 3rd-order intermodulation distortion in the output of balanced diode mixers. Predicted performance agrees well with results obtained from a typical h.f. mixer.
Derivation of simple expressions for interelectrode capacitances of i.g.f.e.t.s as a function of bias condition
- Author(s): G.A. Armstrong and J.A. Magowan
- Source: Electronics Letters, Volume 7, Issue 10, p. 281 –283
- DOI: 10.1049/el:19710193
- Type: Article
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A general theory for the derivation of the intrinsic interelectrode capacitances of an insulated-gate field-effect transistor operating under current-flow conditions is presented. The theory takes into account the charge distribution within the device. Results of computations using a 1-dimensional analysis are assessed by comparison with those obtained from a 2-dimensional analysis.
Erratum: Linear amplification using envelope feedback
- Author(s): T. Arthanayake and H.B. Wood
- Source: Electronics Letters, Volume 7, Issue 10, page: 284 –284
- DOI: 10.1049/el:19710194
- Type: Article
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Erratum: Concerning the electric strength of solid argon
- Author(s): T.J. Gallagher
- Source: Electronics Letters, Volume 7, Issue 10, page: 284 –284
- DOI: 10.1049/el:19710195
- Type: Article
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Erratum: Computer analysis of the fundamental and higher-order modes in single and coupled microstrip
- Author(s): J.B. Davies and D.G. Corr
- Source: Electronics Letters, Volume 7, Issue 10, page: 284 –284
- DOI: 10.1049/el:19710196
- Type: Article
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