Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 6, Issue 16, 6 August 1970
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 6, Issue 16
6 August 1970
Two-dimensional analysis of substrate effects in junction f.e.t.s
- Author(s): M. Reiser
- Source: Electronics Letters, Volume 6, Issue 16, p. 493 –494
- DOI: 10.1049/el:19700343
- Type: Article
- + Show details - Hide details
-
p.
493
–494
(2)
This letter describes a numerical analysis of substrate effects in j.f.e.t.s. It is shown that the addition of a high-resistivity substrate increases the output conductance considerably, whereas the transconductance is not much affected. The substrate behaves roughly like a parallel resistor.
Electrical lengths of stripline bends
- Author(s): B. Wardrop
- Source: Electronics Letters, Volume 6, Issue 16, p. 494 –496
- DOI: 10.1049/el:19700344
- Type: Article
- + Show details - Hide details
-
p.
494
–496
(3)
The effect of curvature on the resonant frequencies of various stripline circular rings is investigated both theoretically and experimentally. From these results, an expression is derived which enables the electrical length of a bend, derived from the arithmetic-mean length, to be corrected to allow for the curvature.
Singular perturbation and bounded-input bounded-state stability
- Author(s): C.A. Desoer
- Source: Electronics Letters, Volume 6, Issue 16, p. 496 –497
- DOI: 10.1049/el:19700345
- Type: Article
- + Show details - Hide details
-
p.
496
–497
(2)
Rε represents a linear time-invariant system of order n + h. When ε → 0, Rε, reduces to R0 of order n ≤ n + h. Conditions are given under which the bounded-input bounded-state stability of R0 implies that of Rε and we show that, under these conditions, as ε → 0, the state trajectories of Rε approach those of R0 for any continuous input.
Analysis of helicon-wave propagation
- Author(s): D. Midgley
- Source: Electronics Letters, Volume 6, Issue 16, p. 497 –498
- DOI: 10.1049/el:19700346
- Type: Article
- + Show details - Hide details
-
p.
497
–498
(2)
The attenuation of helicon waves is controlled by a steady current of uniform density in the direction of propagation, but no growing wave occurs. It is shown that growth can occur in the presence of a linear variation in the direction of propagation.
New mode of microwave emission from GaAs
- Author(s): A.C. Baynham and D.J. Colliver
- Source: Electronics Letters, Volume 6, Issue 16, p. 498 –500
- DOI: 10.1049/el:19700347
- Type: Article
- + Show details - Hide details
-
p.
498
–500
(3)
Observations of emission from GaAs are reported. These differ from earlier observations in that they are produced by amplification of an electromagnetic wave within a sample of GaAs. The specimen dimensions perpendicular to the applied d.c bias field form a microwave cavity and determine the frequency of emission.
Inversion of a class of matrices occurring in control-system theory by an m-step procedure allied to Gaussian elimination
- Author(s): A. Simpson
- Source: Electronics Letters, Volume 6, Issue 16, p. 500 –501
- DOI: 10.1049/el:19700348
- Type: Article
- + Show details - Hide details
-
p.
500
–501
(2)
Matrices of the form Q(s) + BG, Q being a lambda matrix, occur frequently in control applications, and it is often required to invert them, as, for example, in response calculations. Using a variant of a method proposed by the author as a means for solving the mode-control problem, a recurrence relation is derived which facilitates such calculations while, at the same time, providing insight into the structure of the inverse.
Realisation of cellular arithmetic cells by threshold-logic assemblies
- Author(s): S.L. Hurst
- Source: Electronics Letters, Volume 6, Issue 16, p. 501 –503
- DOI: 10.1049/el:19700349
- Type: Article
- + Show details - Hide details
-
p.
501
–503
(3)
Cellular-logic arithmetic arrays require basic multiplier or divider cells of some complexity when realised with Boolean-logic gates. The suggested use of threshold gates reduces this cell complexity and offers a reduction in cell propagation time.
Method of measuring mobility of majority carriers in silicon devices
- Author(s): J.A. Pals
- Source: Electronics Letters, Volume 6, Issue 16, p. 503 –504
- DOI: 10.1049/el:19700350
- Type: Article
- + Show details - Hide details
-
p.
503
–504
(2)
A method is described for measuring the mobility of majority carriers in a silicon layer bounded by a depletion region. Only standard measurements of capacitance and conductance have to be done. No other quantities, such as the concentration of the carriers, need be known.
Approximation to a linear-phase power function (l.p.p.f.) in an m-dimensional orthonormal space
- Author(s): A.R. Memon
- Source: Electronics Letters, Volume 6, Issue 16, p. 504 –507
- DOI: 10.1049/el:19700351
- Type: Article
- + Show details - Hide details
-
p.
504
–507
(4)
An approximation to an l.p.p.f. for the synthesis of a recursive lowpass digital filter having approximately linear phase within the baseband is described.
Titanium dioxide as gate insulator for m.o.s. transistors
- Author(s): J. Wakefield and H.S. Gamble
- Source: Electronics Letters, Volume 6, Issue 16, p. 507 –508
- DOI: 10.1049/el:19700352
- Type: Article
- + Show details - Hide details
-
p.
507
–508
(2)
Metal-oxide-semiconductor (m.o.s.) transistors using titanium dioxide as the gate insulator have been fabricated which are of n channel enhancement type. Owing to the high permittivity of titanium dioxide, the transistors have low threshold voltages and high transconductance.
Transient response of a p–n junction capacitor to a ramp signal
- Author(s): A.B. Bhattacharyya and M.L. Gupta
- Source: Electronics Letters, Volume 6, Issue 16, p. 508 –509
- DOI: 10.1049/el:19700353
- Type: Article
- + Show details - Hide details
-
p.
508
–509
(2)
An analysis of the transient response of a step p–n junction capacitance to a linearly varying input signal is presented. The response has been found to be significantly bias-dependent and has some features not observed in linear capacitors. The essential transient parameters and their dependence on bias are given in a tabular form.
Contribution to numerical methods for calculation of complex dielectric permittivities
- Author(s): M. Rodriguez-Vidal and E. Martin
- Source: Electronics Letters, Volume 6, Issue 16, page: 510 –510
- DOI: 10.1049/el:19700354
- Type: Article
- + Show details - Hide details
-
p.
510
(1)
A numerical method is described for computing complex dielectric permittivities by the von Hippel–Roberts method, using two samples of the same material and different size. In the process, the Newton–Raphson method is applied to the complex domain
Control-function optimisation using quadrature integrations for positive semidefinite state cost matrix Q
- Author(s): J.C. Allwright
- Source: Electronics Letters, Volume 6, Issue 16, p. 510 –512
- DOI: 10.1049/el:19700355
- Type: Article
- + Show details - Hide details
-
p.
510
–512
(3)
A new technique for control-function optimisation has recently been proposed for linear dynamical systems with quadratic-performance indices which have positive definite state cost matrix Q. Its advantage is that the only integrations needed are quadratures. A modified technique for when Q is positive semidefinite is described here.
Field-emission-controlled transit-time negative resistance
- Author(s): M. Claassen and W. Harth
- Source: Electronics Letters, Volume 6, Issue 16, p. 512 –513
- DOI: 10.1049/el:19700356
- Type: Article
- + Show details - Hide details
-
p.
512
–513
(2)
Field emission from a Schottky contact on an n+–n–n++ semiconductor is proposed for carrier injection into a space-charge region to produce a negative transit-time resistance in the microwave range. Field-emission transit-time diodes are considered to behave linearly up to amplitude saturation, to exhibit low-noise performance, and to be capable of very high frequencies (1010−1012 Hz).
Computer optimisation of cascaded noncommensurable-line lowpass filters
- Author(s): C. Brancher ; F. Maffioli ; A. Premoli
- Source: Electronics Letters, Volume 6, Issue 16, p. 513 –515
- DOI: 10.1049/el:19700357
- Type: Article
- + Show details - Hide details
-
p.
513
–515
(3)
The performance of lowpass filters composed of cascaded noncommensurable-line elements is improved by a computer; among the different characteristics of the response of the filter, a remarkable width of the stopband may be obtained.
Asynchronous binary dividing array
- Author(s): P.A.W. Walker
- Source: Electronics Letters, Volume 6, Issue 16, p. 515 –517
- DOI: 10.1049/el:19700358
- Type: Article
- + Show details - Hide details
-
p.
515
–517
(3)
An iterative dividing array is proposed which is self-timing or asynchronous in operation. Based on the normalising principle, the average number of additions and subtractions to be performed is less than one-half that necessary with simple algorithms. This fact is exploited to reduce division time.
Complete determination of capacitances characterising shielded-resistance potential divider
- Author(s): A.W. Palmer and H. House
- Source: Electronics Letters, Volume 6, Issue 16, p. 517 –518
- DOI: 10.1049/el:19700359
- Type: Article
- + Show details - Hide details
-
p.
517
–518
(2)
A new method for predicting the response of the shielded-resistance potential divider is given which is based on a more complete description of the stray electric fields associated with the divider. The model has great practical importance, as, in contrast to simpler equivalent circuits, its description may be realistically related to actual capacitance measurements.
Pattern learning in humans and electronic learning nets
- Author(s): I. Aleksander and M.C. Fairhurst
- Source: Electronics Letters, Volume 6, Issue 16, p. 518 –520
- DOI: 10.1049/el:19700360
- Type: Article
- + Show details - Hide details
-
p.
518
–520
(3)
The letter reports on a previously unseen similarity between an associative memory model recently proposed for the brain and some electronic systems that have been developed for practical learning machines. This similarity is analysed, and its implications are discussed. Results of a comparison between the learning behaviour of an electronic network and a group of human subjects in a pattern-recognition task are given to complete the comparative study.
Acoustoelectric amplification of surface waves in structure of cadmium-selenide film on lithium niobate
- Author(s): H. Hanebrekke and K.A. Ingebrigtsen
- Source: Electronics Letters, Volume 6, Issue 16, p. 520 –521
- DOI: 10.1049/el:19700361
- Type: Article
- + Show details - Hide details
-
p.
520
–521
(2)
Electronic gain of 38 dB/mm at 170 MHz has been observed in a dispersive surface-wave delay line consisting of a cadmium-selenide film on a lithium-niobate substrate.
New application of fundamental switching theorem
- Author(s): T.L. Hedström
- Source: Electronics Letters, Volume 6, Issue 16, p. 521 –522
- DOI: 10.1049/el:19700362
- Type: Article
- + Show details - Hide details
-
p.
521
–522
(2)
A fundamental switching theorem is used to prove that it is impossible to design a reciprocal phase shifter with only one diode.
Statistics of tropospheric attenuation at 190 GHz from observations of solar noise
- Author(s): P.G. Davies and J.A. Lane
- Source: Electronics Letters, Volume 6, Issue 16, p. 522 –523
- DOI: 10.1049/el:19700363
- Type: Article
- + Show details - Hide details
-
p.
522
–523
(2)
Data are given of the total attenuation in the troposphere as determined by radiometric measurements at Slough over the period June 1968–December 1969. At a zenith angle of about 70°, the attenuation exceeds approximately 1.5, 5, and 12 dB for 1, 0.1, and 0.01% of the time, respectively.
Focused aperture antenna using a spherical main reflector with (Cassegrain) convex feed
- Author(s): H.Ş. Oranç and A.F. Fer
- Source: Electronics Letters, Volume 6, Issue 16, p. 523 –525
- DOI: 10.1049/el:19700364
- Type: Article
- + Show details - Hide details
-
p.
523
–525
(3)
A focused aperture antenna has been realised using a (Cassegrain) convex subreflector with a spherical main reflector. The design was based on geometrical optics, and good agreement was obtained between the measured and calculated field in the focal region.
Simple coincidence system for side-lobe ambiguity reduction in discrete-coded waveforms
- Author(s): A. Cionini and C. Atzeni
- Source: Electronics Letters, Volume 6, Issue 16, p. 525 –527
- DOI: 10.1049/el:19700365
- Type: Article
- + Show details - Hide details
-
p.
525
–527
(3)
The side-lobe behaviour of the autocorrelation functions of phase-coded waveforms limits the application of these signals to the cases where a large dynamic range is not required. The simple coincidence system described in this letter allows an effective control of the side-lobe ambiguity in a large class of phase-coded signals, since the side-lobe level is maintained below a fixed value which does not depend on the signal energy, but merely on the noise power. This method can be of interest in group synchronisation of binary digital systems and, in particular, radar applications, where dense targets are not expected and an automatic counting of the targets has to be performed. A radar-detection problem where this method has been successfully utilised is mentioned.
Novel transistorised lock-in f.m. discriminator
- Author(s): E. Bonek and P. Proksch
- Source: Electronics Letters, Volume 6, Issue 16, p. 527 –528
- DOI: 10.1049/el:19700366
- Type: Article
- + Show details - Hide details
-
p.
527
–528
(2)
A novel single-stage transistorised f.m. discriminator is described. It utilises the principle of a lock-in oscillator, and proves to be superior to the ratio detector as far as selectivity, sensitivity, distortions and a.m. rejection are concerned. Also, fewer and simpler components are required.
Radiation mechanism of dielectric-rod and Yagi aerials
- Author(s): E.-G. Neumann
- Source: Electronics Letters, Volume 6, Issue 16, p. 528 –530
- DOI: 10.1049/el:19700367
- Type: Article
- + Show details - Hide details
-
p.
528
–530
(3)
In order to give a better insight into the radiation mechanism of dielectric-rod and Yagi aerials the problem of the radiation from the free end of a semi-infinite dielectric rod or Yagi transmission line is investigated both theoretically and experimentally. Simple approximate formulas are given for the radiation pattern, the gain, the effective aperture and the beamwidth. Using a digital computer, the field near the free end is calculated and compared with the measured field distribution.
S type current/voltage characteristics and recombination emission in Gunn diodes
- Author(s): B.L. Gelmont and M.S. Shur
- Source: Electronics Letters, Volume 6, Issue 16, p. 531 –532
- DOI: 10.1049/el:19700368
- Type: Article
- + Show details - Hide details
-
p.
531
–532
(2)
When impact ionisation occurs in Gunn diodes, recombination radiation must exist with photon energy less than the energy gap due to the Franz-Keldysh effect in the high-field domain. This radiation must be polarised along the field. The criterion for stimulated emission in the Gunn diode is derived. Stimulated emission takes place only outside the high-field domain and can be modulated with the frequency of the Gunn generation.
Erratum: Low-cost reciprocal-law circuit
- Author(s): M.H. Liversidge
- Source: Electronics Letters, Volume 6, Issue 16, page: 532 –532
- DOI: 10.1049/el:19700369
- Type: Article
- + Show details - Hide details
-
p.
532
(1)
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article