Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 5, Issue 14, 10 July 1969
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Volume 5, Issue 14
10 July 1969
Gunn instabilities with surface loading
- Author(s): H.L. Hartnagel
- Source: Electronics Letters, Volume 5, Issue 14, p. 303 –304
- DOI: 10.1049/el:19690231
- Type: Article
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The conditions for Gunn-effect domain formation are derived for the cases of loading the semiconductor surface with magnetic or dielectric materials. This allows one to explain the experimental results obtained with BaTiO3 by Kataoka et al.
Subnanosecond pulse coupling of an He-Ne laser
- Author(s): H. Koetser
- Source: Electronics Letters, Volume 5, Issue 14, p. 304 –305
- DOI: 10.1049/el:19690232
- Type: Article
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A 0.5ns rise time 2.5kV coaxial krytron pulse generator is described, which, together with an electro-optic modulator, comprises a laser intracavity coupler an order of magnitude faster than any yet reported. Iterative round-trip energy coupling has been demonstrated in accordance with theoretical predictions.
Broadband amplification with Gunn diodes
- Author(s): R.L. Gunshor
- Source: Electronics Letters, Volume 5, Issue 14, p. 305 –306
- DOI: 10.1049/el:19690233
- Type: Article
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A broadband u.h.f. amplifier is described. It uses a Gunn diode oscillating at X band frequencies. The source of negative resistance for amplification is related to a lowered current saturation as viewed in I/V characteristics for the diode.
Cycloconvertor amplifier allowing wide variation in load impedance
- Author(s): R.H. Masterman
- Source: Electronics Letters, Volume 5, Issue 14, p. 306 –308
- DOI: 10.1049/el:19690234
- Type: Article
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An improved cycloconvertor design is described, in which the output-voltage waveform is substantially independent of the load impedance. The variation of low-frequency voltage gain of the new ‘commutating cycloconvertor’ and of the conventional cycloconvertor are compared for a range of load phase angle.
Power amplification using an avalanche diode
- Author(s): J.F. Dienst ; R.V. D'Aiello ; E.E. Thomas
- Source: Electronics Letters, Volume 5, Issue 14, p. 308 –309
- DOI: 10.1049/el:19690235
- Type: Article
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A silicon avalanche diode operating in the high-power highefficiency mode of oscillation has been used as a reflection amplifier at frequencies below the oscillation frequency. Saturated power-output levels in excess of 7 W peak have been obtained with 6dB gain at 767 MHz.
Readily biased wideband gyrator circuit for floating or earthed inductors
- Author(s): T.N. Rao
- Source: Electronics Letters, Volume 5, Issue 14, p. 309 –310
- DOI: 10.1049/el:19690236
- Type: Article
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A transistor-circuit realisation for a wideband gyrator circuit, the biasing of which does not rely on any matching between p-n-p and n-p-n transistors, is described. A unique feature that distinguishes this biasing method from other known methods is that it is fully integrable, since it needs no adjustable components for bias adjustment.
New type of time-varying octave filter
- Author(s): A.K.H. Miller
- Source: Electronics Letters, Volume 5, Issue 14, p. 310 –312
- DOI: 10.1049/el:19690237
- Type: Article
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Double quadrature-modulation realisations of lowpass and highpass filters were described recently by Saraga. Extensions to these methods lead to the design of an octave filter using one carrier oscillator rather than the two needed for an equivalent filter designed by the technique referred to above. If the output frequencies are not required to be identical to the input frequencies, this filter also uses fewer modulators. By employing two carrier oscillators, any desired bandwidth may be obtained; the bandwidth and passband position may then be independently varied.
Optimum semiconductor for microwave devices
- Author(s): W. Fawcett ; C. Hilsum ; H.D. Rees
- Source: Electronics Letters, Volume 5, Issue 14, p. 313 –314
- DOI: 10.1049/el:19690238
- Type: Article
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The best semiconductors for microwave devices, silicon and gallium arsenide, are restricted in their performance because the electron drift velocity saturates at a fairly low value. It is proposed that InAs-InP alloys should give better performance. Detailed calculations of drift velocity are made by a Monte Carlo technique, and it is shown that some alloys should give drift velocities greater than 4×107cm/s.
Simple microwave holograms and moiré fringes using the ‘spinning-dipole’ field-perturbation technique
- Author(s): D.N. Swingler and A.P. Anderson
- Source: Electronics Letters, Volume 5, Issue 14, p. 314 –316
- DOI: 10.1049/el:19690239
- Type: Article
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It is shown, both theoretically and experimentally, that a perturbation method of measuring microwave fields can generate simple zone plates with low-intensity fields. The effective wavelength is shown to be less than that actually used and gives rise to a gain in fringe resolution which is beneficial in the formation of microwave holograms.
Calculation of transients on unsymmetrical multiconductor line systems using the graphical method
- Author(s): R. Murray-Shelley
- Source: Electronics Letters, Volume 5, Issue 14, p. 316 –317
- DOI: 10.1049/el:19690240
- Type: Article
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The ‘graphical method’ previously discussed for transient calculation in single-conductor transmission-line systems is generalised for unsymmetrical multiconductor lines having N conductors. The solution equations are expressed in a form suitable for digital programming.
Amplification of acoustic surface waves with two sets of carriers
- Author(s): C.F. Quate
- Source: Electronics Letters, Volume 5, Issue 14, p. 317 –318
- DOI: 10.1049/el:19690241
- Type: Article
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It has been found that the present form of acoustic-surface wave amplifiers consisting of a semiconductor adjacent to an insulating piezeolectric substrate can be improved if the piezoelectric substrate is also semiconducting. When the conductivity of the substrate is properly chosen, the point of maximum gain occurs when the drift velocity of the carriers in the semiconductor is near the velocity of sound.
Calculation of growth rates in oscillators
- Author(s): K.I. Lundstrom
- Source: Electronics Letters, Volume 5, Issue 14, p. 319 –320
- DOI: 10.1049/el:19690242
- Type: Article
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It is shown that the use of a small-signal real-frequency impedance or Q factor to calculate small-signal growth rates in an oscillator circuit is generally incorrect.
Design of asynchronous logic with unconstrained input variation
- Author(s): D.W. Lewin
- Source: Electronics Letters, Volume 5, Issue 14, p. 320 –322
- DOI: 10.1049/el:19690243
- Type: Article
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In asynchronous circuits operating in the fundamental mode, a restriction is imposed on the input variables to the circuit requiring that only one variable may change state at any time. A design method is described which uses an asynchronous delay circuit to generate minimum-distance codes from the primary inputs, which are then used as inputs to a modified version of the basic circuit; using these techniques, input changes of any description may be tolerated. Design equations are presented for a 2-input circuit allowing up to 40ns delay between ‘simultaneously’ changing inputs.
Magnetoelastic surface wave in ferrites
- Author(s): J.P. Parekh
- Source: Electronics Letters, Volume 5, Issue 14, p. 322 –323
- DOI: 10.1049/el:19690244
- Type: Article
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A magnetoelastic surface wave is shown to exist in an elastically isotropic ferrite, e.g. y.i.g. The wave exhibits a nonreciprocal behaviour, and is found to have no counterpart in a purely elastic medium.
Transients in an ammonia-maser oscillator
- Author(s): D.C. Lainé and W.S. Bardo
- Source: Electronics Letters, Volume 5, Issue 14, p. 323 –324
- DOI: 10.1049/el:19690245
- Type: Article
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Damped oscillations of the signal amplitude have been observed during the establishment time of strong oscillations in an ammonia-beam maser.
General rule for the compensation of the sensitivity of a network to its active devices
- Author(s): A.G.J. Holt and M.R. Lee
- Source: Electronics Letters, Volume 5, Issue 14, p. 324 –325
- DOI: 10.1049/el:19690246
- Type: Article
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A technique is described which uses additional amplifiers in existing RC active networks to reduce the effect on transfer functions of simultaneous similar changes in amplifier gains. This method is a generalisation of that suggested in an earlier paper, having the advantage of being applicable to a wider range of networks.
Erratum: Optimum longitudinal electro-optic effect in oblique-cut lithium-niobate plates
- Author(s): K.F. Hulme ; P.H. Davies ; V.M. Cound
- Source: Electronics Letters, Volume 5, Issue 14, page: 325 –325
- DOI: 10.1049/el:19690247
- Type: Article
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