Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 5, Issue 11, 29 May 1969
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Volume 5, Issue 11
29 May 1969
Some aspects of Gunn oscillations in thin dielectric-loaded samples
- Author(s): K.R. Hofmann
- Source: Electronics Letters, Volume 5, Issue 11, p. 227 –228
- DOI: 10.1049/el:19690172
- Type: Article
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The presence of a dielectric (dielectric plus metal) on the surface of a thin GaAs layer not only influences the growth of a space-charge wave, but also, depending on the configuration used, can produce a strongly inhomogeneous d.c. field distribution along the sample, inhibiting the usual domain oscillation pattern.
Loop coupling to a periodic dipole array
- Author(s): K.G. Balmain and S.W. Mikhail
- Source: Electronics Letters, Volume 5, Issue 11, p. 228 –229
- DOI: 10.1049/el:19690173
- Type: Article
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–229
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Conditions are found experimentally for optimising the coupling between a looped feeder (transposed transmission line) and a log-periodic array of radiating dipoles. Under optimum conditions, the coupling is sufficient to be useful in practical antennas.
High-efficiency continuous oscillations in silicon IMPATT diodes below the transit-time frequency
- Author(s): I. Thomson
- Source: Electronics Letters, Volume 5, Issue 11, p. 229 –230
- DOI: 10.1049/el:19690174
- Type: Article
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C.W. room-temperature operation of silicon IMPATT diodes at the first subharmonic of the transit-time frequency has been observed in a high-efficiency mode. Efficiencies as high as 8.8% at 5GHz with 1.2 Wc.w. have been achieved with current densities no more than 1480A/cm2.
Small-signal impedance of space-charge-limited semiconductor diodes
- Author(s): D. Dascalu
- Source: Electronics Letters, Volume 5, Issue 11, p. 230 –231
- DOI: 10.1049/el:19690175
- Type: Article
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A generalised expression for the small-signal impedance of semiconductor diodes with unipolar space-charge-limited (s.c.l.) current is presented. The field dependence of carrier mobility, as well as ionised impurities (or deep traps), is taken into account. As long as the diffusion current can be neglected, these results appear to cover almost all cases of practical interest for Si, Ge or GaAs s.c.l. diodes.
Self-pumped parametric amplification with GaAs transferred-electron devices
- Author(s): H.J. Kuno
- Source: Electronics Letters, Volume 5, Issue 11, page: 232 –232
- DOI: 10.1049/el:19690176
- Type: Article
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The letter reports experimental results obtained with a non-degenerate-type self-pumped parametric amplifier using GaAs transferred-electron devices. Gains of as much as 30dB, noise figures as low as 18dB, and instantaneous gain-bandwidth products of about 50MHz have been obtained at Xband signal frequencies with the amplifier using GaAs transferred-electron devices oscillating at Q band frequencies.
C.W. anomalous-mode operation in silicon planar IMPATT diodes
- Author(s): R.H. De Boise and P.W. Shackle
- Source: Electronics Letters, Volume 5, Issue 11, p. 232 –233
- DOI: 10.1049/el:19690177
- Type: Article
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–233
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Silicon planar IMPATT diodes which operate in the Read mode in the frequency range 4.5–11.5 GHz have been observed to produce c.w. oscillations in the frequency range 0.5–2.0 GHz. These u.h.f. oscillations commence at a current density of 250 A/cm2 and are accompanied by a 15–20% decrease in the diode direct voltage. The d.c./r.f. power-conversion efficiency in the anomalous mode is approximately twice that in the Read mode.
Realisability of uniform aperture distributions
- Author(s): A.C. Kak
- Source: Electronics Letters, Volume 5, Issue 11, p. 233 –234
- DOI: 10.1049/el:19690178
- Type: Article
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Physical realisability of uniform aperture distributions in planar-aperture antennas has been discussed in the light of Rhodes' interpretation of the volume integrals in the complex Poynting theorem.
Considerations in the design of a model propagation path to study obstacle diffraction
- Author(s): R.W. King
- Source: Electronics Letters, Volume 5, Issue 11, p. 234 –235
- DOI: 10.1049/el:19690179
- Type: Article
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Theoretical studies of obstacle diffraction are simplified by assuming the transmitter to be isotropic. The letter treats knife-edge diffraction of a nonisotropic transmitter to find the conditions under which a practical model propagation path will yield results that differ by not more than a specified small factor from those predicted by assuming the source to be isotropic.
Absolute-stability test for discrete systems
- Author(s): C.K. Sun and D. Šiljak
- Source: Electronics Letters, Volume 5, Issue 11, page: 236 –236
- DOI: 10.1049/el:19690180
- Type: Article
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A numerical absolute-stability test for nonlinear discrete systems is proposed. The test is derived from the similar test for continuous systems given by Šiljak by the use of the bilinear transformation.
Numerical analysis of forward and reverse bias potential distribution in a 2-dimensional p-n junction with applications to capacitance calculations
- Author(s): P. Dubock
- Source: Electronics Letters, Volume 5, Issue 11, p. 236 –238
- DOI: 10.1049/el:19690181
- Type: Article
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A method is described for the calculation of capacitance and potential distribution in a 2-dimensional p-n junction such as that at the edge of stripe transistors. The method uses a numerical solution of a modified 2-dimensional Shockley-Poisson equation on a nonuniform mesh.
First-order nonlinear systems governed by generalised Riccati partial-differential equation
- Author(s): B.V. Dasarathy
- Source: Electronics Letters, Volume 5, Issue 11, p. 238 –239
- DOI: 10.1049/el:19690182
- Type: Article
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The letter presents a method of converting a class of first-order nonlinear systems, represented by Riccati type of partial-differential equations, into equivalent linear second-order systems. The familiar Riccati equations and the linear equivalent second-order equation form a particular case of this study.
Impedance-measuring method
- Author(s): J.M. Diamond
- Source: Electronics Letters, Volume 5, Issue 11, p. 239 –240
- DOI: 10.1049/el:19690183
- Type: Article
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The method described measures the magnitude of an unknown impedance by a single unambiguous adjustment. The circuit presented is similar to the Starr and Grützmacher bridges, but does not require repeated adjustment. The phase of the impedance may be found if desired.
Modification to the receive-path waveguide feeder of Goonhilly aerial
- Author(s): N.E. Cartwright
- Source: Electronics Letters, Volume 5, Issue 11, p. 240 –241
- DOI: 10.1049/el:19690184
- Type: Article
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A description is given of the new oversized waveguide feeder developed for the 26m satellite-communication aerial at Goonhilly Downs, Cornwall. The feeder loss has been reduced from its former value of 0.7dB, to 0.31dB, using this installation, with a view to enabling the station to work to a new low-elevation Intellsat III satellite.
Oscillating circuit using nonlinear inductance
- Author(s): A.Y. Spasov
- Source: Electronics Letters, Volume 5, Issue 11, p. 241 –243
- DOI: 10.1049/el:19690185
- Type: Article
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An oscillating circuit with nonlinear inductance is examined. A general characteristic of an inductance is used. Using the method of Samoilo, expressions for the oscillation frequency, the current harmonics, the characteristics of the forced oscillations and the characteristics of the parametric resonance are obtained, without limitations on the oscillation amplitude.
Calculation of the complex permittivity of lossy dielectric materials using the Roberts-von Hippel standing-wave method
- Author(s): J. Watkins and D. Brown
- Source: Electronics Letters, Volume 5, Issue 11, p. 243 –244
- DOI: 10.1049/el:19690186
- Type: Article
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–244
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A program has been written for calculating the complex permittivity e1 – je2 of lossy dielectric materials using the Roberts-von Hippel method
Reduced-voltage operation of a surface-elastic-wave amplifier
- Author(s): C.W. Turner ; A. Shomon ; R.M. White
- Source: Electronics Letters, Volume 5, Issue 11, p. 244 –246
- DOI: 10.1049/el:19690187
- Type: Article
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–246
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Experimental results obtained from a surface-wave amplifier using a segmented-drift-field electrode structure are reported. It is shown that significant electronic gain can be obtained at a much lower voltage than that required for conventional surface-wave amplifiers.
Technique for measurement of HCN-laser linewidth
- Author(s): R.G. Strauch
- Source: Electronics Letters, Volume 5, Issue 11, page: 246 –246
- DOI: 10.1049/el:19690188
- Type: Article
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The spectrum of the 311 and 337 μm lines of an HCN laser is examined with a high-resolution spectrum analyser. Although the outputs have spectral widths of the order of 100kHz, the spectral width of the difference frequency is less than 5kHz. The observed spectra widths are caused by mechanical instability.
Bistable electrical-switching behaviour in glasses and other media
- Author(s): R. Chapman
- Source: Electronics Letters, Volume 5, Issue 11, p. 246 –247
- DOI: 10.1049/el:19690189
- Type: Article
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246
–247
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Reversible bistable electrical switching in uncommon thin-film glasses has recently been reported. A brief study of the mechanisms involved has produced evidence of similar switching in other insulators and air gaps. The device appears to function by producing a metallic bridge between the electrodes.
Transformerless r.p. immittance synthesis from real-part specification
- Author(s): G. Martinelli
- Source: Electronics Letters, Volume 5, Issue 11, p. 247 –248
- DOI: 10.1049/el:19690190
- Type: Article
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247
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A method is proposed for synthetising transformerless r.p. immittance for the case in which only their real part on the imaginary axis is of interest. The method presents the advantage of requiring a very low number of components and very simple computations.
Space-charge wave instability in a semiconductor exhibiting field-dependent diffusion coefficient and saturated drift velocity
- Author(s): P. Gueret
- Source: Electronics Letters, Volume 5, Issue 11, p. 248 –249
- DOI: 10.1049/el:19690191
- Type: Article
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248
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It is shown that, in a semiconductor biased in the saturation region, the combination of a field-dependent diffusion coefficient with a gradient in the steady-state electric-field distribution may lead to space-charge wave amplification.
Correlation of slow rates of rise of current with times to pinch in transient mercury-vapour plasma
- Author(s): A.G. Heaton and D.K. Pal
- Source: Electronics Letters, Volume 5, Issue 11, p. 249 –251
- DOI: 10.1049/el:19690192
- Type: Article
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249
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Measurements of time of maximum pinch in a mercury-vapour-plasma discharge over a range of voltages up to 5kV are not, at first sight, in agreement with values calculated by using the Leontovich-Osovets theory, which has been shown to apply in similar experiments with noble gases. The influence of the external circuit involving the ignitron switch, measuring shunt and associated stripline connecting links, is deduccd from the oscillographic records of instantaneous v and i for the plasma discharge. The ratios v/i for both the external circuit and the plasma discharge are plotted against time to show the times at which the minima and the pinch maximum are reached. A graph showing measured times to pinch is compared with values calculated using the Leontovich-Osovets formula, using the initial rate of rise of current, and shown to be in poor agreement. A further plot of calculated values, obtained by using the mean rate of rise of current up to the pinch point as a fixed value, is shown to be in good agreement with the experimental results.
TE and TM modes in transmission lines with circular outer conductor and eccentric circular inner conductor
- Author(s): E. Abaka and W. Baier
- Source: Electronics Letters, Volume 5, Issue 11, p. 251 –252
- DOI: 10.1049/el:19690193
- Type: Article
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TE and TM modes in transmission lines with circular outer conductor and eccentric circular inner conductor are calculated by the help of the method of conformal transformation. Some results are presented.
Comment: Leaky waves on a dielectric rod
- Author(s): J.R. James
- Source: Electronics Letters, Volume 5, Issue 11, p. 252 –254
- DOI: 10.1049/el:19690194
- Type: Article
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An approximate analysis by Arnbak has shown that solutions (near cutoff) to the cylindrical dielectric-rod transcendental equation (for n=0) possess the same symmetry in their complex top-sheet domain as that commonly found in planar interface structures. The letter shows that, for all solutions (n=0, 1, 2, …) on a lossless cylindrical dielectric rod, symmetry can only hold in the upper (proper) half plane of the top sheet. Symmetry in the lower (improper) half plane involves two sheets. An illustrative example is given and a useful computing technique is mentioned.
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