Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 47, Issue 6, 17 March 2011
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Volume 47, Issue 6
17 March 2011
In Brief
- Source: Electronics Letters, Volume 47, Issue 6, page: 354 –354
- DOI: 10.1049/el.2011.9021
- Type: Article
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- Author(s): Maitham Shams
- Source: Electronics Letters, Volume 47, Issue 6, page: 354 –354
- DOI: 10.1049/el.2011.9022
- Type: Article
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Dr. Maitham Shams of Carleton University, Canada, describes the motivations and uses of the work reported in his Letter “Designing digital subthreshold CMOS circuits using parallel transistor stacks” on page 372. - Author(s): H. Dyball
- Source: Electronics Letters, Volume 47, Issue 6, page: 355 –355
- DOI: 10.1049/el.2011.9023
- Type: Article
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High-power, high-efficiency quantum cascade lasers (QCLs) that operate at room temperature and above have been developed by Pranalytica Inc. The team at the US-based company have almost doubled the output power of their state-of-the-art uncooled 4.6 µm lasers to 2 W, achieved a high temperature operation of more than 1 W of output power at 67°C, and have also reported the first uncooled QCLs with watt-level output power at 4.0 µm. “These achievements are the results of a specific effort to optimise thermal management at both chip and packaging levels for uncooled operation,” said Dr Richard Maulini, Senior Scientist at Pranalytica. “We believe this is a very exciting new development because, unlike traditional, thermoelectrically-cooled high-power QCLs systems, which require bulky power supplies and heatsinks, our uncooled QCLs can easily be integrated into portable and even handheld systems.” - Author(s): H. Dyball
- Source: Electronics Letters, Volume 47, Issue 6, page: 356 –356
- DOI: 10.1049/el.2011.9024
- Type: Article
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Researchers at Massachusetts Institute of Technology (MIT) in the US have demonstrated a new approach to improve the high-frequency characteristics of InAlAs high electron mobility transistors (HEMTs). In their Letter in this issue Taewo Kim, Dae-hyun Kim (now at Teledyne Scientific Company) and Jesús del Alamo report on how their optimised heterostructure design with an InAs-rich spacer in the InAlAs barrier increased in the current gain cut-off frequency fT to 530 GHz from 390 GHz for a device with a gate length Lg of 40 nm.
Interview
QCLs keep their cool
Reinforcing the barrier
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- Author(s): R.A. Daly ; W.S.T. Rowe ; K. Ghorbani
- Source: Electronics Letters, Volume 47, Issue 6, p. 359 –360
- DOI: 10.1049/el.2010.3617
- Type: Article
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An innovative approach to the design of a centre-fed omnidirectional collinear array for use in the 900 MHz band is presented. The coplanar printed circuit realisation using a combination of the CPW and coplanar strips is shown to be very effective in eliminating beam tilt with change in frequency. Both measured and simulated results confirm less than 1.5° of beam tilt in the omnidirectional pattern with an azimuth ripple of approximately +/−0.7 dB, over an impedance bandwidth of greater than 10%. - Author(s): N. Zhang ; P. Li ; B. Liu ; X.W. Shi ; Y.J. Wang
- Source: Electronics Letters, Volume 47, Issue 6, p. 360 –361
- DOI: 10.1049/el.2011.0104
- Type: Article
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A novel compact printed dipole antenna for wireless local area networks (WLAN) applications is presented. The proposed antenna consists of two radiating patches and four L-shaped slots etched on the patches, which can produce dual bands. Employing a unique tapered structure, good wide impedance matching can be implemented without an external matching circuit, and then wide bandwidths in the two working bands could be achieved conveniently. The proposed antenna yields an impedance bandwidth of 2.2–2.85 and 4.64–7.54 GHz with return loss less than −10 dB. In addition, the antenna has good omnidirectional radiation patterns in the H-plane and low cross-polarisation levels in both the E- and the H-planes. A comparison between measured and simulated results shows good agreement. - Author(s): R. Zaker and A. Abdipour
- Source: Electronics Letters, Volume 47, Issue 6, p. 361 –363
- DOI: 10.1049/el.2011.0078
- Type: Article
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A new design for a dual-wideband circularly-polarised (CP) slot antenna with a modified tuning stub is presented. By adding an L-shaped strip and slit to the conventional L-shaped stub in the antenna with bandwidth (BW) of 49%, both impedance and CP BWs are considerably increased by up to 69%. Dual-wideband CP characteristic is then achieved by inserting another L-shaped slot into the tuning stub. Experimental results show that 3 dB CP and VSWR <2 impedance BWs are 18.9 and 21% for the lower band (3.5 GHz-WiMax) and also 32.5 and 33% for the higher band (5–6 GHz-WLAN/WiMax), respectively. - Author(s): M. Kaboli ; H.S. Farahani ; M.S. Abrishamian ; S.A. Mirtaheri
- Source: Electronics Letters, Volume 47, Issue 6, p. 363 –364
- DOI: 10.1049/el.2010.3146
- Type: Article
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A novel array of a corner-cube reflector antenna targeting the 10.7–13.5 GHz frequency band is presented. The proposed antenna has the advantages of low-profile, broadband and high gain with linear polarisation. The substrate integrated waveguide (SIW) technology is employed effectively for feeding the antenna. The proposed antenna is formed of four corner-cube reflectors which are fed by SIW lines. The concept is validated by simulations and measurements. - Author(s): P. Xu ; Z.-H. Yan ; C. Wang
- Source: Electronics Letters, Volume 47, Issue 6, p. 364 –365
- DOI: 10.1049/el.2010.3280
- Type: Article
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A novel microstrip-fed printed monopole antenna is proposed for WLAN and WiMAX applications. Using a modified fork-shaped strip, multiple impedance bandwidths covering 2.4/5.2/5.8 GHz WLAN and 5.5 GHz WiMAX bands are obtained. In addition, a dual L-shaped parasitic plane is inserted on the bottom of the FR4 substrate to cover the 3.5 GHz WiMAX band. Omnidirectional radiation patterns with appreciable gains over the operating bands are obtained by the fabricated antenna with a compact size of 34.5×18 mm2. Thus, the antenna is suitable for multi-band wireless communication applications. - Author(s): P.J. Soh ; G.A.E. Vandenbosch ; S.L. Ooi ; M.R.N. Husna
- Source: Electronics Letters, Volume 47, Issue 6, p. 365 –367
- DOI: 10.1049/el.2010.3525
- Type: Article
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A novel planar inverted-F antenna (PIFA), incorporating a triangular Sierpinski gasket, is presented. The used conducting textile and polyester fleece allow easy on-body integration and simple practical fabrication. It shows dual-band response, combining a 16 % band at 2.45 GHz with an upper 12 % band at 5.2 GHz. The broadside gain is 3.1 dBi. Good agreement between calculated and measured data is observed.
Zero tilt omnidirectional collinear array antenna with coplanar feed
Dual-band and low cross-polarisation printed dipole antenna with L-slot and tapered structure for WLAN applications
Dual-wideband circularly-polarised slot antenna using folded L-shaped stub
Low-profile, high-gain and broadband array of corner cube reflector antenna based on substrate integrated waveguide
Multi-band modified fork-shaped monopole antenna with dual L-shaped parasitic plane
Wearable dual-band Sierpinski fractal PIFA using conductive fabric
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- Author(s): H. Li and Q. Xu
- Source: Electronics Letters, Volume 47, Issue 6, p. 367 –368
- DOI: 10.1049/el.2010.3711
- Type: Article
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A new design methodology is presented for detecting spiking signals from complex brain neural potentials, which applies ultra-low-power technology to implement a nonlinear energy operator (NEO)-based spike detector. The NEO spike detector achieves a differentiator with a differential structure and a multiplier based on the dynamic translinear principle using a sub-threshold technique. As is demonstrated by the simulation results, the proposed circuit has detected the instantaneous energy of the input signals well, which focus in the range 5 Hz to 10 kHz.
Sub-threshold-based ultra-low-power neural spike detector
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- Author(s): L. Ke ; R. Wilcock ; P.R. Wilson
- Source: Electronics Letters, Volume 47, Issue 6, p. 368 –369
- DOI: 10.1049/el.2010.3726
- Type: Article
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Inverter based voltage controlled oscillators are a fundamental building block in analogue integrated circuit design and enjoy a more compact size and wider tuning range than their inductor capacitor counterparts. In some applications an ultra-wide tuning range is desired and this can be difficult to achieve when combined with the requirement for good phase noise. Presented is a double feedback dual inverter delay cell that demonstrates significantly wider tuning range than previously reported designs whilst maintaining excellent phase noise performance. A key contribution to the work is the fabrication of a 120 nm 1.2 V prototype chip with measured results confirming a tuning range of over seven octaves. - Author(s): S.-J. Yun ; H.D. Lee ; K.-D. Kim ; J.-K. Kwon
- Source: Electronics Letters, Volume 47, Issue 6, p. 369 –371
- DOI: 10.1049/el.2011.0166
- Type: Article
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A differentially-tuned LC-VCO PLL using a transformer-resonator and a loop-phase control scheme is proposed. The phase of a control path between the differential controls is adjusted to suppress spurious tones. The measured results for the proposed PLL, implemented in a CMOS 65 nm process, show operation frequencies of 3.5–5.6 GHz, phase noise of −118.5 dBc/Hz at 1 MHz offset, and spur rejection of 73 dB, while dissipating 3.2 mA at 1 V supply. - Author(s): C. Cho ; J. Cha ; M. Ahn ; J.J. Kim ; C. Lee
- Source: Electronics Letters, Volume 47, Issue 6, p. 371 –372
- DOI: 10.1049/el.2010.7555
- Type: Article
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An antenna switch controller integrated with single-pole-multi-throw RF switches is presented. It is implemented in a 0.18 µm CMOS thin-film silicon-on-insulator (SOI) process. The proposed switch controller generates a negative voltage to enhance the linearity and power-handling capability of CMOS antenna switches, resulting in excellent RF performances. The size of the controller is 0.35 mm2 and the power consumption is 2 µA for stand-by mode and 50 µA for Rx mode. - Author(s): M. Muker and M. Shams
- Source: Electronics Letters, Volume 47, Issue 6, p. 372 –374
- DOI: 10.1049/el.2011.0141
- Type: Article
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A method for designing faster digital CMOS circuits operating in the subthreshold mode is proposed. Since the threshold voltage may be lower at narrower widths owing to the inverse-narrow-width effect in modern nanometre MOSFETs, the subthreshold current may be higher than expected at these narrow widths. It is shown that using only transistor widths that maximise the current-to-capacitance ratio, either individually or in parallel stacks, as appropriate, leads to faster circuits. Speed increases of up to 2.85 times have been demonstrated in ring oscillator simulations. - Author(s): R. Priewasser ; M. Agostinelli ; S. Marsili ; M. Huemer
- Source: Electronics Letters, Volume 47, Issue 6, p. 374 –375
- DOI: 10.1049/el.2010.3500
- Type: Article
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Presented is a digital controller to regulate a point-of-load Buck converter. The regulator varies both the duty cycle, as well as the switching frequency, by controlling not only the on-time, but also the off-time of the switching period. The multi-loop digital controller, which achieves a tight voltage regulation and an excellent dynamic performance, is presented and its effectiveness is proven by means of experimental results. The controller architecture, together with an analogue-to-digital converter, has been integrated in a 0.13 µm CMOS technology. - Author(s): F. Guédon ; S.K. Singh ; R.A. McMahon ; F. Udrea
- Source: Electronics Letters, Volume 47, Issue 6, p. 375 –377
- DOI: 10.1049/el.2011.0241
- Type: Article
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A fast gate driver for normally-on silicon carbide (SiC) junction field-effect transistors (JFETs) is presented. It includes a protection feature against short-circuits due to the normally-on behaviour of the JFETs. - Author(s): M.-T. Shiue ; K.-W. Yao ; C.-S.A. Gong
- Source: Electronics Letters, Volume 47, Issue 6, p. 377 –378
- DOI: 10.1049/el.2010.3286
- Type: Article
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A tunable pseudo-resistor featuring a wide input voltage range and ultra-high resistance is proposed. It is composed of serial-connected PMOS devices operating in the subthreshold region. An auto-tuning circuit involved makes the pseudo-resistor robust against process variations and common-mode voltage shifting. Operation and theoretical analysis are detailed. Simulation results in a 0.18 µm technology demonstrate the advantages of the proposed pseudo-resistor.
120 nm 1.2 V low-noise VCO with over seven octave tuning range
Differentially-tuned low-spur PLL using 65 nm CMOS process
Negative charge-pump based antenna switch controller using 0.18 µm SOI CMOS technology
Designing digital subthreshold CMOS circuits using parallel transistor stacks
Digital controller design for point-of-load DC-DC converters with variable switching frequency
Gate driver for SiC JFETs with protection against normally-on behaviour induced fault
Tunable high resistance voltage-controlled pseudo-resistor with wide input voltage swing capability
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- Author(s): M.W. Oh ; H.G. Leem ; S.M. Yoon ; C.W. Byun ; S.H.K. Park ; H.S. Oh ; K.C. Park
- Source: Electronics Letters, Volume 47, Issue 6, p. 378 –380
- DOI: 10.1049/el.2011.0022
- Type: Article
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A chrage pump circuit suitable for depletion-mode oxide thin-film transistors (TFTs) is presented. In this circuit, negative gate-to-source bias is applied to turn off the n-type oxide TFTs because they have negative threshold voltages (VT). For this operation, two different supply voltages are used, i.e. VDD and VDD/2. Spice simulation shows that the power efficiency is about 70% in generating VDD×2 output voltage with 50 µA load current. The output voltages of the fabricated circuits are comparable to those of the simulation results. - Author(s): A. Morales ; C.M. Travieso ; M.A. Ferrer ; J.B. Alonso
- Source: Electronics Letters, Volume 47, Issue 6, p. 380 –381
- DOI: 10.1049/el.2011.0156
- Type: Article
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Presented is a new approach to person verification using finger-knuckle-prints (FKPs). It applies a Gabor filter to enhance the FKP information and a scale invariant feature transform (SIFT) to extract the features. Experiments with the most representative FKP public database confirm that the SIFT features obtained after Gabor enhancement of the principal finger knuckle lines improve the performance of the person identifier. - Author(s): S. Yang
- Source: Electronics Letters, Volume 47, Issue 6, p. 382 –383
- DOI: 10.1049/el.2010.3620
- Type: Article
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A reduced reference picture quality measure is proposed for MPEG-2 compressed videos. The measure can be calculated from the ratio of three N tap one-dimensional discrete cosine transform (DCT) coefficients. The proposed measures are highly correlated to subjective test scores and can provide accurate assessment of picture quality for a certain type of sequences.
Charge pump circuit for depletion-mode oxide TFTs
Improved finger-knuckle-print authentication based on orientation enhancement
Reduced reference MPEG-2 picture quality measure based on ratio of DCT coefficients
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- Author(s): C. Ouyang and H. Ji
- Source: Electronics Letters, Volume 47, Issue 6, p. 383 –385
- DOI: 10.1049/el.2010.3439
- Type: Article
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The Lagrangian relaxation algorithm is an effective approach to solve the problem of passive sensor data association. However, the cost function of the algorithm is computed by using least squares estimation of the target position without taking the estimation errors into account. To solve this problem, a modified cost function is derived, which can reflect the correlation between measurements more reasonably owing to the integration of estimation errors. The simulation results show that the improved relaxation algorithm based on the modified cost function has better performance than the original one, implying good application prospects.
Modified cost function for passive sensor data association
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- Author(s): J. Lu ; N.-Y. Wang ; M.-C.F. Chang
- Source: Electronics Letters, Volume 47, Issue 6, p. 385 –386
- DOI: 10.1049/el.2011.0348
- Type: Article
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For ultra-wideband RF systems, a wide frequency tuning range of an LC-VCO is highly desired. Presented is an LC-VCO operating at 20 GHz with differentially tuned MOS varactors. A simple voltage converter is used to generate the differential tuning voltages without compromising the VCO gain or phase noise. When implemented in 65 nm CMOS technology, the VCO achieves 14.6–22.2 GHz tuning range and exhibits a worst-case phase noise of −96 dBc/sqrt(Hz) at 1 MHz offset across the entire frequency range. The VCO core consumes 4 mA of current from a 0.65 V supply and occupies approximately an area of about 0.06 mm2. - Author(s): S. Grop ; P.-Y. Bourgeois ; E. Rubiola ; W. Schäfer ; J. De Vicente ; Y. Kersalé ; V. Giordano
- Source: Electronics Letters, Volume 47, Issue 6, p. 386 –388
- DOI: 10.1049/el.2011.0028
- Type: Article
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A report is presented on the measurement of a frequency synthesiser that provides round frequencies (10 GHz, 5 MHz, 100 MHz) with high spectral purity from a cryocooled sapphire oscillator in the vicinity of 10 GHz. The synthesiser and sapphire oscillator are a part of Elisa, a frequency reference that exhibits a stability of parts in 10−15 from 1 s to 1000 s integration time, designed and implemented for the European Space Agency. The synthesiser features low 1/f phase noise, −96 dBc/Hz at 1 Hz off the carrier at the 10 GHz output, and −133 dBc/Hz at 1 Hz offset at the 100 MHz output. - Author(s): H.W. Liu ; L. Shen ; Y. Jiang ; X.H. Guan ; S. Wang ; L.Y. Shi ; D. Ahn
- Source: Electronics Letters, Volume 47, Issue 6, p. 388 –389
- DOI: 10.1049/el.2011.0006
- Type: Article
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A novel triple-mode bandpass filter using an open-loop slotline resonator in a defected ground waveguide is presented. Distinct characteristics of the triple-mode resonator are investigated by using even-odd mode analysis. The proposed filter has been designed, fabricated and measured. Good agreement between simulation and measurement verifies the validity of this design methodology.
14.6–22.2 GHz LC-VCO in 65 nm CMOS technology for wideband applications
Frequency synthesis chain for ESA deep space network
Triple-mode bandpass filter using defected ground waveguide
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- Author(s): A. Konczykowska ; J.-Y. Dupuy ; F. Jorge ; M. Riet ; J. Moulu ; V. Nodjiadjim ; P. Berdaguer ; J. Godin
- Source: Electronics Letters, Volume 47, Issue 6, p. 389 –390
- DOI: 10.1049/el.2011.0154
- Type: Article
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A 3-bit power-DAC was designed and fabricated in 0.7 µm InP double-heterojunction bipolar transistor (DHBT) technology. An 8-level differential output signal with 3.6 Vpp amplitude was measured at symbol rates in the range of 40 GBd. The circuit combines DAC and driver functions allowing to directly drive a modulator without need for a linear amplifier. This compact IC solution is suitable for transmitters with advanced modulation formats like 64-QAM operating at high symbol rate. - Author(s): A. Abdalla ; M. Lima ; A. Teixeira
- Source: Electronics Letters, Volume 47, Issue 6, p. 391 –392
- DOI: 10.1049/el.2011.0157
- Type: Article
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Presented is an extended technique for orthogonal frequency division multiplexing (OFDM) transmission with a constant envelope and optical carrier suppression. This allows a reduction of error vector magnitude at higher optical modulation index when compared to the conventional or constant envelope OFDM.
42 GBd 3-bit power-DAC for optical communications with advanced modulation formats in InP DHBT
Reduced bandwidth transmitter and simple detection scheme for improved constant envelope OFDM
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- Author(s): L.R. Wang ; X.M. Liu ; Y.K. Gong ; D. Mao ; H. Lu
- Source: Electronics Letters, Volume 47, Issue 6, p. 392 –393
- DOI: 10.1049/el.2010.3674
- Type: Article
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The generation and compression of dissipative-soliton (DS) pulses in a compact erbium-doped all-fibre laser system is investigated experimentally. The high-energy picosecond DSs can be dechirped to femtosecond pulses by a segment of singlemode fibre with the maximal compression factor of 122. It is found that the necessary dispersion to compress DSs is approximately proportional to their initial pulse durations, and the larger the spectrum width, the less the dispersion needed to dechirp the DSs. - Author(s): Y. Yang ; H.C. Liu ; W.Z. Shen ; J.A. Gupta ; H. Luo ; M. Buchanan ; Z.R. Wasilewski
- Source: Electronics Letters, Volume 47, Issue 6, p. 393 –395
- DOI: 10.1049/el.2010.3543
- Type: Article
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Reported for the first time is a full GaAs-based room-temperature near-infrared (NIR) up-conversion device fabricated by wafer-fusing a GaNAsSb/GaAs pin photodetector (PD) with a GaAs/AlGaAs light-emitting diode (LED). NIR photons with wavelengths in the range 1.3–1.6 µm were up-converted to 0.87 µm. - Author(s): R. Maulini ; A. Lyakh ; A. Tsekoun ; R. Go ; C.K.N. Patel
- Source: Electronics Letters, Volume 47, Issue 6, p. 395 –397
- DOI: 10.1049/el.2011.0206
- Type: Article
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High-performance uncooled quantum cascade lasers emitting at wavelengths of 4.6 and 4.0 µm are reported. The 4.6 µm lasers show an average optical power in excess of 2 W at a heatsink temperature of 300K, wall-plug efficiencies of 13 and 10% at output power levels of 1 and 2 W, respectively, and an average power in excess of 1.2 W at 340K. The 4.0 µm lasers show an average optical power in excess of 1.5 W at 300K and wall-plug efficiencies of 9 and 7% at output power levels of 1 and 1.5 W, respectively. - Author(s): E. Vilella ; A. Comerma ; O. Alonso ; A. Diéguez
- Source: Electronics Letters, Volume 47, Issue 6, p. 397 –398
- DOI: 10.1049/el.2011.0017
- Type: Article
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The gated operation is proposed as an effective method to reduce the noise in pixel detectors based on Geiger mode avalanche photodiodes. A prototype with the sensor and the front-end electronics monolithically integrated has been fabricated with a conventional HV-CMOS process. Experimental results demonstrate the increase of the dynamic range of the sensor by applying this technique. - Author(s): J. Fatome ; B. Kibler ; M. El-Amraoui ; J.-C. Jules ; G. Gadret ; F. Desevedavy ; F. Smektala
- Source: Electronics Letters, Volume 47, Issue 6, p. 398 –400
- DOI: 10.1049/el.2010.7520
- Type: Article
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Reported is an experimental demonstration of the mid-infrared extension of supercontinuum in a 1.9 µm suspended core chalcogenide fibre, the zero dispersion wavelength of which is shifted to 1.9 µm, i.e. into the transparency window of standard silica fibres. Based on the well-known long-pulse regime of supercontinuum generation in silica fibre, a low-cost optical quasi-CW source at 1.53 µm has been converted and shifted into a large number of interacting femtosecond solitons localised up to 2.1 µm. This optical source, called a soliton gas, allows the pumping of a 50 cm long chalcogenide microstructured fibre near its zero dispersion wavelength, thus leading to an efficient extension of a mid-infrared supercontinuum beyond 2.4 µm. - Author(s): J. Telkkälä ; J. Viheriälä ; A. Aho ; P. Melanen ; J. Karinen ; M. Dumitrescu ; M. Guina
- Source: Electronics Letters, Volume 47, Issue 6, p. 400 –401
- DOI: 10.1049/el.2011.0125
- Type: Article
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A report is presented on the use of nanoimprint lithography for the fabrication of InP-based laterally-coupled ridge waveguide distributed feedback laser (DFB) diodes emitting around 1550 nm. At room temperature the uncoated lasers exhibited a sidemode suppression ratio of 50 dB at an output power of 6 mW. The lasers showed extremely pure singlemode spectrum with the Lorentzian part of the measured linewidth being ∼200 kHz. The results prove that nanoimprint lithography is suitable for the low-cost manufacturing of high performance singlemode laser diodes. - Author(s): D.W. Duan ; Y.J. Rao ; W.P. Wen ; J. Yao ; D. Wu ; L.C. Xu ; T. Zhu
- Source: Electronics Letters, Volume 47, Issue 6, p. 401 –403
- DOI: 10.1049/el.2010.7236
- Type: Article
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A novel in-line all-fibre compact Fabry-Pérot interferometer (FPI) high temperature optical fibre tip sensor formed by fusion splicing two sections of singlemode fibres with a large intentional lateral offset is proposed and demonstrated, for the first time to the authors' knowledge. Simple fabrication steps include only cleaving and fusion splicing. Because no other processes are involved, the fabrication is easy, safe, and cost-effective. The sensor has been tested for high temperature measurements showing a sensitivity of 41 nm/°C with good linearity and repeatability, and is capable of operation at temperatures up to 1000°C. It is expected that such a miniature FPI could find wide applications in mechanics, aeronautics, chemical sensing and metallurgy.
Dissipative soliton generation/compression in compact all-fibre laser system
GaAs-based near-infrared up-conversion device fabricated by wafer fusion
High average power uncooled mid-wave infrared quantum cascade lasers
Low-noise pixel detectors based on gated Geiger mode avalanche photodiodes
Mid-infrared extension of supercontinuum in chalcogenide suspended core fibre through soliton gas pumping
Narrow linewidth laterally-coupled 1.55 µm DFB lasers fabricated using nanoimprint lithography
In-line all-fibre Fabry-Pérot interferometer high temperature sensor formed by large lateral offset splicing
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- Author(s): S.Y. Chao and B.X. Chen
- Source: Electronics Letters, Volume 47, Issue 6, p. 403 –404
- DOI: 10.1049/el.2010.3298
- Type: Article
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Recently, an adaptive generalised likelihood ratio test-linear quadratic (AGLRT_LQ) detector has been proposed for MIMO radar in the presence of non-homogeneous clutter. However, this method suffers a large performance loss when the amount of secondary data available is small. In this reported work, a full data GLRT detector is derived by utilising not only the primary data but also the secondary data in the design process and the covariance matrix estimation process to decrease this loss.
FDGLRT detector of MIMO radar in non-homogeneous clutter
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- Author(s): N. Killat ; M. Ťapajna ; M. Faqir ; T. Palacios ; M. Kuball
- Source: Electronics Letters, Volume 47, Issue 6, p. 405 –406
- DOI: 10.1049/el.2010.7540
- Type: Article
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Electroluminescence (EL) spectroscopy in combination with drift-diffusion simulations was used to prove the presence of impact ionisation in AlGaN/GaN HEMTs illustrated on InGaN back-barrier devices. Regardless of the level of gate leakage current, which is dominated by contributions such as surface leakage current and others, EL enabled the revealing of hole generation due to impact ionisation. Hole currents as low as 10pA were detectable by the optical technique used. - Author(s): T.-W. Kim ; D.-H. Kim ; J.A. del Alamo
- Source: Electronics Letters, Volume 47, Issue 6, p. 406 –407
- DOI: 10.1049/el.2010.3666
- Type: Article
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An InAlAs/InGaAs HEMT with an InAs-rich barrier spacer (In0.52Al0.48As) to reduce the parasitic resistance is reported. Devices were obtained with a source resistance of 170 Ω-μm. A 40 nm gate length In0.7Ga0.3As HEMT with Lside=100 nm and tins=10 nm shows excellent transconductance and subthreshold characteristics including gm=1.6 mS/μm, DIBL=122 mV/V and S=80 mV/dec at VDS=0.5 V. In addition, this device exhibits an fT=530 GHz and fmax=445 GHz at VDS=0.7 V. These excellent characteristics mainly arise from a reduction in the source resistance through the use of the InAs-rich InAlAs spacer.
Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance
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- Author(s): Y. Sun ; C.J. Jeong ; S.K. Han ; S.G. Lee
- Source: Electronics Letters, Volume 47, Issue 6, p. 407 –409
- DOI: 10.1049/el.2010.3552
- Type: Article
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A full frequency band active RF tracking filter design for a digital TV tuner is implemented for the first time. By combined control of the Gm and C values in the biquad of the Gm-C filter, the proposed tracking bandpass filter satisfies full frequency band tuning while maintaining narrow bandwidth. The Gm cell of the tracking filter is based on a dynamic source degenerated differential pair with optimised transistor size ratio, which provides good linearity and high-frequency operation. The fabricated tracking filter based on a 0.13 µm CMOS process shows 48–780 MHz tracking range with 15–60 MHz bandwidth, more than 50 dB of third-order harmonic rejection, 14 dB unwanted signal rejection at N+6 channel offset, and a maximum IIP3 of 3.8 dBm at 4.7 dB gain while drawing 30 mA from a 1.2 V supply. - Author(s): R.D. Souza
- Source: Electronics Letters, Volume 47, Issue 6, p. 409 –411
- DOI: 10.1049/el.2010.3300
- Type: Article
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p.
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A recently proposed cognitive radio model that exploits primary retransmissions is modified, such that the secondary pair uses multiple antennas. By doing so the co-existence penalty can be practically eliminated, while achieving the same useful secondary throughput as before. The method does not require any non-causal knowledge or full channel state information at any transmitter. - Author(s): J. Liu and Z. Qiu
- Source: Electronics Letters, Volume 47, Issue 6, p. 411 –412
- DOI: 10.1049/el.2010.3410
- Type: Article
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p.
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Presented is transceiver optimisation for multi-user non-regenerative MIMO relay downlink systems. By taking the channel uncertainties into account, a robust scheme is proposed to minimise the sum mean square error (SMSE) of the system under the power constraints, where the transceiver is obtained by using the Karush-Kuhn-Tucker conditions and realised through an iterative algorithm. Simulation results verify the robustness of the proposed scheme against the estimation errors. - Author(s): B. Jin ; S. Zhang ; J. Pan ; X. Lin
- Source: Electronics Letters, Volume 47, Issue 6, p. 412 –414
- DOI: 10.1049/el.2010.7478
- Type: Article
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A digital pre-coding based serial compressed sensing (CS) ultra-wideband (UWB) communication system is proposed. By establishing a mathematical model, signal detection is studied based on the CS theory. Simulation results in the IEEE 802.15.3a channel model show that with a low sampling rate, the proposed system can operate in a regime of heavy intersymbol interference. - Author(s): W.Y. Luo ; L. Jin ; S.P. Liu ; L.Z. Zhang
- Source: Electronics Letters, Volume 47, Issue 6, p. 414 –416
- DOI: 10.1049/el.2011.0435
- Type: Article
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The problem of wireless security for the downlink of multiuser MISO-OFDMA systems operating over a frequency-selective channel is investigated. Considering interference suppression and resource allocation between different users, a physical-layer security model is proposed that exploits the redundancy of transmit antenna arrays to provide security by deliberate signal randomisation. Signal randomisation causes the receiver's signal to have lower power efficiency than the optimal transmit beamforming. To overcome this problem, a suboptimal, but efficient resource allocation algorithm based on spatial correlation and array redundancy is devised.
CMOS on-chip active RF tracking filter for digital TV tuner ICs
Reducing co-existence penalty of retransmission-based cognitive radio protocol
Robust sum-MSE transceiver optimisation for multi-user non-regenerative MIMO relay downlink systems
Serial compressed sensing communication system for UWB impulse radio in bursty applications
Wireless physical layer security model and resource allocation algorithm in MISO-OFDMA
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- Author(s): M.H. Wong ; D.F. Brown ; M.L. Schuette ; H. Kim ; V. Balasubramanian ; W. Lu ; J.S. Speck ; U.K. Mishra
- Source: Electronics Letters, Volume 47, Issue 6, page: 416 –416
- DOI: 10.1049/el.2011.9025
- Type: Article
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- Author(s): D. Tanaka ; Y. Ikuma ; Y. Shoji ; M. Kuwahara ; X. Wang ; K. Kintaka ; H. Kawashima ; T. Toyosaki ; H. Tsuda
- Source: Electronics Letters, Volume 47, Issue 6, page: 416 –416
- DOI: 10.1049/el.2011.9026
- Type: Article
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Erratum for ‘X-band power performance of N-face GaN MIS-HEMTs’
Erratum for ‘Demonstration of 1000-times switching of phase-change optical gate with Si wire waveguides’
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