Online ISSN
1350-911X
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0013-5194
Electronics Letters
Volume 46, Issue 26, 23 December 2010
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Volume 46, Issue 26
23 December 2010
Editorial
- Author(s): G. Davies and E. Linfield
- Source: Electronics Letters, Volume 46, Issue 26, p. 1 –3
- DOI: 10.1049/el.2010.3575
- Type: Article
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- Author(s): D. Arnone
- Source: Electronics Letters, Volume 46, Issue 26, p. 5 –6
- DOI: 10.1049/el.2010.8550
- Type: Article
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- Author(s): H. Eisele
- Source: Electronics Letters, Volume 46, Issue 26, page: 7 –7
- DOI: 10.1049/el.2010.3394
- Type: Article
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- Author(s): H. Eisele
- Source: Electronics Letters, Volume 46, Issue 26, p. 8 –11
- DOI: 10.1049/el.2010.3319
- Type: Article
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A review is presented of the state of the art of electronic sources based on semiconductor devices that have either demonstrated substantial amounts of output power or have a strong potential of producing significant output powers at frequencies above 300 GHz. Both fundamental sources and harmonic power generation using varactor or varistor diodes are discussed. The key devices are Schottky diodes, heterojunction barrier varactors, heterojunction bipolar transistors, high-electron mobility transistors, resonant tunnelling diodes, tunnel-injection transit-time devices, Gunn devices, and superlattice electron devices. - Author(s): M. Siegel
- Source: Electronics Letters, Volume 46, Issue 26, page: 13 –13
- DOI: 10.1049/el.2010.3548
- Type: Article
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- Author(s): K.S. Il'in ; A.D. Semenov ; H.-W. Hübers ; M. Siegel
- Source: Electronics Letters, Volume 46, Issue 26, p. 14 –16
- DOI: 10.1049/el.2010.3415
- Type: Article
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Hot-electron bolometer (HEB) mixers are used in many low noise heterodyne radio astronomical receivers. Their noise temperature is at the level of 10–15 times the quantum limit, and their gain bandwidth is from 2 GHz to slightly more than 5 GHz depending on the type of substrate material used for a device fabrication. The HEB mixers presented in this Letter are a complex multilayer thin-film structure containing an ultra-thin superconducting film of NbN as a detecting element, and a thick normal metal layer as an antenna structure. The overall performance of the device has been improved by optimisation of the HEB mixer fabrication steps starting with ultra-thin NbN films, followed by NbN/Au bi-layers for antenna structures. Patterning was achieved using electron-beam lithography and lift-off processes. The noise temperature of the HEB mixer fabricated with the improved technology is about 800 K, as measured in a cryogenic-free system with a quantum cascade laser as a local oscillator. - Author(s): M. Shur
- Source: Electronics Letters, Volume 46, Issue 26, page: 17 –17
- DOI: 10.1049/el.2010.3352
- Type: Article
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- Author(s): M. Shur
- Source: Electronics Letters, Volume 46, Issue 26, p. 18 –21
- DOI: 10.1049/el.2010.8457
- Type: Article
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The oscillation frequencies of the electron density (called plasma waves) in short channel devices correspond to the terahertz (THz) frequency range, and excitation of plasma waves can be used for generating and detecting THz radiation. Plasma wave THz detectors already outperform more conventional THz detectors, but achieving the full potential of plasma wave electronics devices may require use of grating-gate devices and/or plasmonic crystals, which are 2D or 3D arrays of plasmonic FETs. - Author(s): T. Dekorsy
- Source: Electronics Letters, Volume 46, Issue 26, page: 23 –23
- DOI: 10.1049/el.2010.3349
- Type: Article
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- Author(s): G. Klatt ; D. Stephan ; M. Beck ; J. Demsar ; T. Dekorsy
- Source: Electronics Letters, Volume 46, Issue 26, p. 24 –26
- DOI: 10.1049/el.2010.3315
- Type: Article
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Intense terahertz emitters are one of the most important components of terahertz (THz) time-domain spectroscopy systems. In this presented report, the development of THz emitters over the last two decades is reviewed, and an outlook for future THz emitters is given. The physical principle behind the THz generation process is discussed for two types of emitters: state-of-the-art large-area photoconductive emitters are compared to THz emitters based on the photo-Dember effect. The latter do not require an external bias voltage. This passive character of the photo-Dember emitters has several advantages which are outlined. - Author(s): A. Seeds
- Source: Electronics Letters, Volume 46, Issue 26, page: 27 –27
- DOI: 10.1049/el.2010.8351
- Type: Article
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- Author(s): M.J. Fice ; E. Rouvalis ; L. Ponnampalam ; C.C. Renaud ; A.J. Seeds
- Source: Electronics Letters, Volume 46, Issue 26, p. 28 –31
- DOI: 10.1049/el.2010.1917
- Type: Article
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A review is presented of continuous-wave terahertz sources based on the optical heterodyne generation (photomixing) technique, that make use of optical components and fabrication techniques originally developed for the 1550 nm optical fibre telecommunications window. The uni-travelling carrier photodiode is identified as a key component for conversion of optical to terahertz power, and the state of the art is summarised in terms of terahertz power generated at various frequencies. An approach based on phase locking the heterodyned lasers is described, which enables terahertz signals to be generated with extremely high spectral purity and frequency accuracy, and progress in developing the photonic integrated circuits required for its implementation is reported. Finally, possible future developments in the field are discussed. - Author(s): J. Cunningham
- Source: Electronics Letters, Volume 46, Issue 26, page: 33 –33
- DOI: 10.1049/el.2010.3353
- Type: Article
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- Author(s): J. Cunningham ; M.B. Byrne ; C.D. Wood ; L. Dazhang
- Source: Electronics Letters, Volume 46, Issue 26, p. 34 –37
- DOI: 10.1049/el.2010.3317
- Type: Article
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A review is conducted of recent advances in the technology and applications of on-chip integrated terahertz systems, in which pulses of terahertz frequency radiation are generated by a photoconductive material, guided through a planar waveguide, and then detected coherently by photoconductive detection. These integrated systems are highly compact compared with typical free-space time domain terahertz spectroscopy systems, and allow much smaller sample volumes to be investigated, since they concentrate the propagating terahertz field to a length-scale far smaller than the diffraction limit. How both time-domain spectroscopy and imaging can be acheived using on-chip terahertz systems is discussed, along with some potential future applications for on-chip systems in the terahertz spectroscopy of single nanostructures. - Author(s): D. Mittleman
- Source: Electronics Letters, Volume 46, Issue 26, page: 39 –39
- DOI: 10.1049/el.2010.3354
- Type: Article
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- Author(s): R. Mendis and D.M. Mittleman
- Source: Electronics Letters, Volume 46, Issue 26, p. 40 –44
- DOI: 10.1049/el.2010.3318
- Type: Article
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Presented is a review of recent work by the authors in which the lowest-order transverse-electric (TE1) mode of a parallel-plate waveguide (PPWG) is used for terahertz (THz) applications. This work adds a new dimension to the multitude of diverse THz applications made possible by PPWGs. Using the TE1 mode, demonstration is presented of an ultra-low loss THz waveguide, a highly sensitive microfluidic sensor, a whispering-gallery mode waveguide, and an artificial dielectric with an effective refractive index less than unity. - Author(s): J. Faist
- Source: Electronics Letters, Volume 46, Issue 26, page: 45 –45
- DOI: 10.1049/el.2010.3350
- Type: Article
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- Author(s): J. Faist and G. Scalari
- Source: Electronics Letters, Volume 46, Issue 26, p. 46 –49
- DOI: 10.1049/el.2010.3316
- Type: Article
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It is shown that the density matrix framework developed in the context of quantum cascade lasers can also be successfully used to compute the transport and gain in resonant tunnelling diodes. In particular, it is shown that the obstacle to raising the resonant frequency of resonant tunnelling diodes is set by the need to find high Q, singlemode resonators with electrical access. Conversely, achieving operation of quantum cascade lasers at high temperature and low frequency requires the design of injector structures with low absorption cutoffs. - Author(s): F. Capasso
- Source: Electronics Letters, Volume 46, Issue 26, page: 51 –51
- DOI: 10.1049/el.2010.3356
- Type: Article
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- Author(s): N. Yu ; Q.J. Wang ; M.A. Kats ; J.A. Fan ; F. Capasso ; S.P. Khanna ; L. Li ; A.G. Davies ; E.H. Linfield
- Source: Electronics Letters, Volume 46, Issue 26, p. 52 –57
- DOI: 10.1049/el.2010.2131
- Type: Article
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Semiconductor microstructures can be used to tailor the dispersion properties of surface plasmon polaritons in the terahertz (THz) frequency range, and therefore can be used as important building blocks for terahertz optical devices. The physical principles of three structures are discussed: plasmonic second-order gratings, designer (spoof) surface plasmon polariton structures, and channel polariton structures. The effectiveness of these structures is demonstrated by utilising them to improve power throughput and to reduce the beam divergence of edge-emitting THz quantum cascade lasers. Plasmonics promises compact and low-loss solutions for manipulating light at THz wavelengths, and will have a large impact on applications such as imaging, light detection and ranging (LIDAR), and the heterodyne detection of chemicals. - Author(s): S. Barbieri
- Source: Electronics Letters, Volume 46, Issue 26, page: 59 –59
- DOI: 10.1049/el.2010.3355
- Type: Article
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- Author(s): P. Gellie ; J.-F. Lampin ; C. Sirtori ; S. Barbieri
- Source: Electronics Letters, Volume 46, Issue 26, p. 60 –64
- DOI: 10.1049/el.2010.8393
- Type: Article
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It is demonstrated that the cavity resonance frequency – the round-trip frequency – of terahertz quantum cascade lasers can be injection-locked by direct modulation of the bias current using an RF source. Metal-metal and single-plasmon waveguide devices with round-trip frequencies up to 35 GHz have been studied, and show locking ranges above 200 MHz. A square-root dependence of the locking range with RF-power was found to be in agreement with classical injection-locking theory. Inside this locking range the laser round-trip frequency is phase-locked, with a phase noise determined by the RF-synthesiser, leading to the generation of modelocked pulses with low timing jitter. - Author(s): K. Kawase
- Source: Electronics Letters, Volume 46, Issue 26, page: 65 –65
- DOI: 10.1049/el.2010.3348
- Type: Article
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- Author(s): K. Kawase ; H. Hoshina ; A. Iwasaki ; Y. Sasaki ; T. Shibuya
- Source: Electronics Letters, Volume 46, Issue 26, p. 66 –68
- DOI: 10.1049/el.2010.3303
- Type: Article
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The aim of this study was to apply terahertz (THz) technology to security applications, and in particular, for screening and identification of drugs-of-abuse in mail. Comparison was made of transmission spectra obtained with both THz time-domain spectroscopy and a tunable THz source, and the effects of sample configuration on the resulting spectra were examined. The utility of diffuse reflectance spectroscopy using a tunable THz source was also examined. A non-invasive mail inspection system targeting drugs-of-abuse and explosives was built, exploiting the ability of THz frequency waves to penetrate packaging materials and the known characteristic absorption spectra of a number of materials of security relevance in this frequency range. The system is composed of two stages: in the first stage, the scattering of a continuous THz wave is used to select mail that contains concealed powder; in the second stage, the absorption spectrum of the suspicious mail is measured and the concealed material is identified via its THz spectrum. - Author(s): P. Siegel
- Source: Electronics Letters, Volume 46, Issue 26, page: 69 –69
- DOI: 10.1049/el.2010.8455
- Type: Article
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- Author(s): P.H. Siegel and V. Pikov
- Source: Electronics Letters, Volume 46, Issue 26, p. 70 –72
- DOI: 10.1049/el.2010.8442
- Type: Article
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Investigations on the biological impact of low levels of millimetre-wave energy date back to the first experiments on the generation and detection of these high-frequency signals by Sir Jagadis Chunder Bose at the end of the 19th century. Slightly more than a hundred years later, millimetre-wave transmission has become a ubiquitous commercial reality. Despite the widespread use of millimetre-wave transmitters for communications, radar and even non-lethal weapons systems, only a handful of researchers have funded programmes focusing on millimetre-wave interactions with biological systems. As such, there is a growing need for a better understanding of the mechanisms of these interactions and their possible adverse and therapeutic implications. Independent of the health impact of long-term exposure to high doses of millimetre-wave energy on whole organisms, there exists the potential for subtle effects on specific tissues or organs which can best be quantified in studies which examine real-time changes in cellular function as energy is applied. In this Letter, a series of experiments are presented which show changes in cell membrane potential and the action potential firing rate of cortical neurons under short (1 min) exposures to continuous-wave 60 GHz radiation at µW/cm2 power levels, more than 1000 times below the US government maximum permissible exposure. The findings have implications for non-contact stimulation and control of neurologic function, and might prove useful in a variety of health applications from suppression of peripheral neuropathic pain to the treatment of central neurological disorders.
Interview with Dr Don Arnone
Interview with Dr Heribert Eisele
State of the art and future of electronic sources at terahertz frequencies
Interview with Professor Michael Siegel
Hot-electron bolometer mixers for terahertz radiation
Interview with Professor Michael Shur
Plasma wave terahertz electronics
Interview with Dr Thomas Dekorsy
Large-area laser-driven terahertz emitters
Interview with Professor Alwyn Seeds
Telecommunications technology-based terahertz sources
Interview with Professor John Cunningham
On-chip terahertz systems for spectroscopy and imaging
Interview with Professor Dan Mittleman
Multifaceted terahertz applications of parallel-plate waveguide: TE1 mode
Interview with Professor Jerome Faist
Unified description of resonant tunnelling diodes and terahertz quantum cascade lasers
Interview with Professor Federico Capasso
Terahertz plasmonics
Interview with Dr Stefano Barbieri
RF injection-locking of terahertz quantum cascade lasers
Interview with Professor Kodo Kawase
Mail screening applications of terahertz radiation
Interview with Dr Peter Siegel
Impact of low intensity millimetre waves on cell functions
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