Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 41, Issue 9, 28 April 2005
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Volume 41, Issue 9
28 April 2005
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- Author(s): J. Ramírez-Angulo ; M.S. Sawant ; R.G. Carvajal ; A. López-Martín
- Source: Electronics Letters, Volume 41, Issue 9, p. 511 –512
- DOI: 10.1049/el:20050565
- Type: Article
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A compact implementation of a scheme to improve linearity of MOS resistors is introduced. It is based on capacitive gate voltage averaging in conjunction with large resistive biasing elements implemented using MOS transistors operating in subthreshold. Experimental results from a test chip in 0.5 µm CMOS technology are shown that verify the proposed technique. - Author(s): C.-L. Chen and Y.-C. Chang
- Source: Electronics Letters, Volume 41, Issue 9, p. 512 –514
- DOI: 10.1049/el:20057998
- Type: Article
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A low-cost fully-differential operational amplifier (opamp) using a novel self-biased cascode output stage and cross-coupled input stage is proposed. Fabricated in only an 84×67 µm2 area with TSMC 0.35 µm technology, and loaded with more than 100 pF capacitance, the opamp possesses 60 dB DC gain, 3 V/µs slew rate, 7.8 MHz unity-gain bandwidth, and −48 dB total harmonic distortion.
Linearisation of MOS resistors using capacitive gate voltage averaging
Self-biased cross-coupled low-cost fully-differential CMOS operational amplifier
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- Author(s): C. Di Nallo and A. Faraone
- Source: Electronics Letters, Volume 41, Issue 9, p. 514 –515
- DOI: 10.1049/el:20058356
- Type: Article
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A new internal antenna for multiband cellphones comprises a U-shaped elongated flat conductor featuring a closed meandered slot, a ground and a feed leg. A benchmark on a Motorola T192 handset is conducted to illustrate the operation of this structure – called a folded inverted conformal antenna – showing significantly more radiating bandwidth than a conventional dual-band PIFA. - Author(s): G. Koutitas and C. Tzaras
- Source: Electronics Letters, Volume 41, Issue 9, p. 515 –517
- DOI: 10.1049/el:20058308
- Type: Article
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The uniform theory of diffraction (UTD) is extended to multiple cylinder structures by introducing a new formulation of the UTD diffraction coefficients in cooperation with a slope diffraction term for maximum accuracy in the electromagnetic modelling. The solution is, then, applicable to radiowave paths where mountains, hills or other rounded objects are the main cause of electromagnetic diffraction.
Multiband internal antenna for mobile phones
Multiple cylinder UTD solution
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- Author(s): C. Rao ; X. Yuan ; J. Zou
- Source: Electronics Letters, Volume 41, Issue 9, p. 517 –518
- DOI: 10.1049/el:20058439
- Type: Article
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A photoelectric plasma-leakage monitoring apparatus (PPMA) based on ultraviolet absorption spectrum for extracorporeal blood-circle treatment systems is presented. The monitoring function is realised with a double beam of light together with appropriate electronic signal processing. The results show that the PPMA possesses high sensitivity and good stability.
Photoelectric plasma-leakage monitoring apparatus
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- Author(s): S. Shahparnia and O.M. Ramahi
- Source: Electronics Letters, Volume 41, Issue 9, p. 519 –520
- DOI: 10.1049/el:20050445
- Type: Article
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A novel concept for ultra-wideband suppression of switching noise in high-speed printed circuit boards (PCBs) is proposed, implemented and tested. This concept consists of using non-symmetrical, embedded electromagnetic bandgap (EEBG) structures in conjunction with material with high dielectric constants. The proposed design modifies the classical EEBG structures to achieve a high degree of miniaturisation and an unprecedented broadband suppression of switching noise.
Miniaturised electromagnetic bandgap structures for broadband switching noise suppression in PCBs
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- Author(s): G. Xu and J. Yuan
- Source: Electronics Letters, Volume 41, Issue 9, p. 520 –522
- DOI: 10.1049/el:20050088
- Type: Article
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An accurate circuit model is presented for the general sample-and-hold circuit with a finite sampling duration. The applications of the model, such as to design a direct down-conversion sampler (RF sampler) and to calculate the thermal noise and output SNR of the general sample-and-hold circuit, are discussed. The results provide a theoretical basis for understanding and designing a sample-and-hold circuit.
Accurate sample-and-hold circuit model
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- Author(s): K. Kim and I.-C. Park
- Source: Electronics Letters, Volume 41, Issue 9, p. 522 –523
- DOI: 10.1049/el:20050473
- Type: Article
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An efficient image signal processing structure is proposed for CMOS image sensors to achieve low area and power consumption. In the proposed structure, the gamma correction block is moved to the front to merge several image signal processings into one block. An efficient compensation scheme is also proposed to reduce the errors caused by the moving of the nonlinear gamma correction. Experimental results show that the proposed structure reduces area and power consumption by 23.8 and 31.1%, respectively.
Combined image signal processing for CMOS image sensors
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- Author(s): J. Schormans
- Source: Electronics Letters, Volume 41, Issue 9, p. 523 –525
- DOI: 10.1049/el:20050239
- Type: Article
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Recently clock and data synchronisation issues have prompted a rethink of how data should be communicated within embedded microprocessor systems, leading to the development of early standards for serial transmission of data using packets; these feature a symbol for delineating the end of a packet. Bounds are investigated on the potential advantage, in terms of extra data compression, if compression took place in conjunction with packetisation. The Shannon formula for a binary data source is re-derived, showing how the formula varies when compressing relatively small chunks of data into packets. Simulation results suggest that a non-trivial amount of extra compression can be obtained in this way, and that the advantage is greater for data with lower original entropy.
Ubiquitous packet networking and data compression
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- Author(s): A.R. Ellingboe ; V.J. Law ; F. Soberon ; F. Garcia ; W. Graham
- Source: Electronics Letters, Volume 41, Issue 9, p. 525 –526
- DOI: 10.1049/el:20050424
- Type: Article
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The effects of the external circuit on plasma instabilities in an inductive plasma source are investigated. The instabilities are found to be asymmetric with respect to the circuit input impedance. A simplified model of the antenna-plasma coupling provides an explanation of the asymetry.
External circuit system effects on chlorine plasma instabilities
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- Author(s): E. Culurciello ; P.O. Pouliquen ; A.G. Andreou ; K. Strohbehn ; S. Jaskulek
- Source: Electronics Letters, Volume 41, Issue 9, p. 526 –528
- DOI: 10.1049/el:20050006
- Type: Article
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A monolithic four-channel digital galvanic isolation buffer in the 0.5 µm silicon on sapphire (SOS) CMOS technology is reported. Advantage is taken of the insulating properties of the sapphire substrate to integrate on the same die both the isolation structure and the interface electronics. Each isolation channel has been tested to operate at data rates over 100 Mbit/s. The system can tolerate ground bounces of 1 V/µs and is tested for 800 V isolation. The system includes an integrated isolation charge pump to power the input circuit and is hence capable of operating from a single 3.3 V power supply.
Monolithic digital galvanic isolation buffer fabricated in silicon on sapphire CMOS
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- Author(s): S.P. Chan ; V.M.N. Passaro ; G.T. Reed
- Source: Electronics Letters, Volume 41, Issue 9, p. 528 –529
- DOI: 10.1049/el:20058198
- Type: Article
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An analysis based on simulation of polarisation depedence and the singlemode condition for small and deeply etched silicon-on-insulator waveguide dimensions is presented. Examples of designs that satisfy both requirements simultaneously have been evaluated using the three-dimensional full vectorial beam propagation method.
Singlemode and polarisation free conditions for small silicon-on-insulator waveguides
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- Author(s): A. Friedrich ; G. Scarpa ; G. Boehm ; M.-C. Amann
- Source: Electronics Letters, Volume 41, Issue 9, p. 529 –531
- DOI: 10.1049/el:20050540
- Type: Article
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Injectorless quantum-cascade (QC) lasers, for the first time comparable to conventional QC lasers, are presented. The samples are based on InP and the active region is designed as a four-level staircase, realised in the strain-compensated material system Ga0.4In0.6As/Al0.56In0.44As. Low threshold current densities and a maximum operating temperature of 350 K have been achieved, due to an optimised design. At 77 K the wavelength is about 10 µm, while threshold current densities of 0.9 kA/cm2 have been observed, which compare well with those of conventional QC lasers in this wavelength region. - Author(s): G. Balakrishnan ; S.H. Huang ; A. Khoshakhlagh ; P. Hill ; A. Amtout ; S. Krishna ; G.P. Donati ; L.R. Dawson ; D.L. Huffaker
- Source: Electronics Letters, Volume 41, Issue 9, p. 531 –532
- DOI: 10.1049/el:20050564
- Type: Article
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Room-temperature optically-pumped In0.2Ga0.8Sb quantum well lasers on Si are reported. The defect-free monolithic epistructure growth on a Si(100) substrate is initiated by an AlSb quantum dot nucleation layer followed by an AlSb/GaSb superlattice. The 13% mismatch between the AlSb and Si lattice is accommodated by misfit dislocations and associated crystallographic undulations in the AlSb buffer. The nucleation layer and buffer are characterised by atomic force microscopy and transmission electron microscopy. The lasing spectrum is characterised as a function of pump power and polarisation analysis.
High performance injectorless quantum-cascade lasers
Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate
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- Author(s): H. Kamitsuna ; Y. Yamane ; M. Tokumitsu ; H. Sugahara ; M. Muraguchi
- Source: Electronics Letters, Volume 41, Issue 9, p. 532 –534
- DOI: 10.1049/el:20050261
- Type: Article
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A low-power 2×2 switch IC using InP HEMTs as cold FETs is presented. It has a logic-level-independent interface since no signal line is grounded. The IC yields low insertion loss of 1.5–2.7 dB and high isolation of >21.2 dB below 30 GHz. When two 40 Gbit/s signals were input, error-free operation was confirmed with virtually zero power dissipation. - Author(s): N. Boubekeur ; J.G. Hartnett ; M.E. Tobar ; N. Bazin ; Y. Kersalé ; V. Giordano
- Source: Electronics Letters, Volume 41, Issue 9, p. 534 –535
- DOI: 10.1049/el:20058179
- Type: Article
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The operation of a 12.7 GHz cryogenic oscillator based on a whispering gallery mode resonator doped with Ti3+ ions is presented. The resonator operates at 34 K and exhibits a frequency stability order 2×10−13 for 8 s<τ<20 s. This corresponds to state-of-the-art line splitting of order 10−7. - Author(s): T. Teshirogi ; S. Saito ; M. Uchino ; M. Ejima ; K. Hamaguchi ; H. Ogawa ; R. Kohno
- Source: Electronics Letters, Volume 41, Issue 9, p. 535 –536
- DOI: 10.1049/el:20050604
- Type: Article
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The design and performance of an MMIC burst oscillator that oscillates only while the driving pulse is applied are described. Since it does not generate carrier leak, a UWB radar using this oscillator may effectively mitigate interference with services using the restricted frequency band by locating its spectrum sufficiently far from the band. - Author(s): D. Borg and D.B. Hunter
- Source: Electronics Letters, Volume 41, Issue 9, p. 537 –538
- DOI: 10.1049/el:20050569
- Type: Article
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A discretely tunable passive microwave photonic delay line based on a multichannel grating matrix is demonstrated. This topology demonstrates high-speed high-resolution time delaying of microwave signals, along with requiring a reduced number of discrete gratings for any given delay range. High channel isolation and low insertion loss are also features of this topology, making this suitable for many wideband applications.
40 Gbit/s/ch 2×2 switch IC using InP HEMTs
Frequency stability of Ti3+-doped whispering gallery mode sapphire resonator oscillator at 34 K
Residual-carrier-free burst oscillator for automotive UWB radar applications
Tunable microwave photonic passive delay line based on multichannel fibre grating matrix
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- Author(s): Z. Chen ; B. Vucetic ; J. Yuan
- Source: Electronics Letters, Volume 41, Issue 9, p. 538 –540
- DOI: 10.1049/el:20050258
- Type: Article
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The asymptotic bit error performance of the Alamouti scheme with transmit antenna selection is investigated for imperfect selection of antenna subset. It is shown that the transmit diversity order is equal to the largest ordinal number of the antenna within the selected antenna subset.
Asymptotic performance of space-time block codes with imperfect transmit antenna selection
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- Author(s): A. Yoshizawa and H. Tsuchida
- Source: Electronics Letters, Volume 41, Issue 9, p. 540 –541
- DOI: 10.1049/el:20050693
- Type: Article
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A report is presented of observed violation of the Clauser-Horne-Shimony-Holt (CHSH) inequality, a particular form of Bell's inequality, in polarisation-entangled photon pairs in the 1550 nm band. Accidental coincidences were included as detected in the S value evaluation of the CHSH inequality. A 10.5 km fibre was used as a quantum channel.
Long-distance test of Bell's inequality in 1550 nm band using polarisation entanglement
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- Author(s): N. Calabretta ; G. Contestabile ; A. D'Errico ; E. Ciaramella
- Source: Electronics Letters, Volume 41, Issue 9, p. 541 –543
- DOI: 10.1049/el:20050449
- Type: Article
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A novel all-optical label processor/erasure for DPSK spectrally separated label and payload is demonstrated. Experimental results show the recognition of two different labels at 12.5 Gbit/s at distinct outputs, while the label is simultaneously erased allowing for a new label insertion. The low power and asynchronous label processor/erasure can be scaled to distinguish a larger number of labels, to operate at higher bit rate, and then can be potentially used in an optical label switching network. - Author(s): D. Mahgerefteh ; Y. Matsui ; C. Liao ; B. Johnson ; D. Walker ; X. Zheng ; Z.F. Fan ; K. McCallion ; P. Tayebati
- Source: Electronics Letters, Volume 41, Issue 9, p. 543 –544
- DOI: 10.1049/el:20050631
- Type: Article
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10 Gbit/s transmission over 250 km of standard fibre at 1550 nm with 4.8 dB penalty using a transmitter comprising a directly modulated DFB laser, a multi-cavity filter and a standard receiver, is demonstrated. - Author(s): S. Kamei ; Y. Inoue ; T. Mizuno ; K. Iemura ; T. Shibata ; A. Kaneko ; H. Takahashi
- Source: Electronics Letters, Volume 41, Issue 9, p. 544 –546
- DOI: 10.1049/el:20050319
- Type: Article
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A silica-based 1.5%-Δ 100 GHz-spacing 32-channel athermal arrayed-waveguide grating (AWG) with compact size and extremely low insertion loss is described. By reducing the fibre coupling loss and the excess loss in a silicone-filled groove, an insertion loss of 1.3 dB was achieved with this athermal AWG. - Author(s): K. Yuksel ; S. Dupont ; D. Hamoir ; J.-C. Froidure
- Source: Electronics Letters, Volume 41, Issue 9, p. 546 –547
- DOI: 10.1049/el:20058384
- Type: Article
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The requirements for preventive maintenance of point-to-multipoint passive optical networks is investigated. The method developed, based on the use of an OTDR, of reference variable reflectors and of a proprietary signal-analysis software is described. Faults in the network are identified, quantified and localised, making the preventive maintenance possible. - Author(s): N. Chi ; L. Yu ; S. Yu ; P. Jeppesen
- Source: Electronics Letters, Volume 41, Issue 9, p. 547 –549
- DOI: 10.1049/el:20050482
- Type: Article
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A novel scheme for generation of a 40 Gbit/s binary polarisation shift keying signal based on a LiNbO3 Mach-Zehnder modulator is proposed. The signal is successfully transmitted over 50 km standard singlemode fibre with 0.6 dB penalty. - Author(s): E.A. Patent ; J.J.G.M. van der Tol ; M.L. Nielsen ; J.J.M. Binsma ; Y.S. Oei ; J. Mørk ; M.K. Smit
- Source: Electronics Letters, Volume 41, Issue 9, p. 549 –551
- DOI: 10.1049/el:20050275
- Type: Article
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An integrated Mach-Zehnder interferometer using self-switching, capable of reducing the saturation induced pattern effect, is reported. The device functionality is shown for 10 Gbit/s, and BER measurements show an improvement of up to 7 dB of the input power dynamic range. - Author(s): Y. Suzaki ; H. Yasaka ; Y. Kawaguchi ; R. Iga ; H. Okamoto
- Source: Electronics Letters, Volume 41, Issue 9, p. 551 –552
- DOI: 10.1049/el:20058151
- Type: Article
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The generation of a block with eight WDM signals and its wavelength switching operation over the whole C-band are demonstrated in a monolithically integrated WDM modulator with cyclic AWGs. A pair of the modulators can generate any wavelength signals within the entire C-band owing to the cyclic property of the AWG. This configuration enables switching the operating channel block for optical path routing and easily increasing the number of channels by arraying them in parallel. Error-free operation for 80 channels (8 channels×10 blocks) is achieved for 10 Gbit/s NRZ signals. - Author(s): G. Bolognini ; S. Sugliani ; F. Di Pasquale
- Source: Electronics Letters, Volume 41, Issue 9, p. 553 –554
- DOI: 10.1049/el:20050092
- Type: Article
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Bidirectional Raman pumping schemes for C-band dense-WDM transmission in dispersion-shifted fibres are experimentally investigated taking into account both pump-to-signal and inter-channel four wave mixing (FWM) interactions, as well as optical signal-to-noise ratio (OSNR) performance. For the first time it is shown that an optimal combination of co- and counter-propagating pumping technologies leads to acceptable OSNR performance allowing, at the same time, for an effective reduction of inter-channel FWM crosstalk with limited pump-to-signal FWM interaction. - Author(s): S.-D. Yang ; Z. Jiang ; A.M. Weiner ; K.R. Parameswaran ; M.M. Fejer
- Source: Electronics Letters, Volume 41, Issue 9, p. 554 –556
- DOI: 10.1049/el:20050613
- Type: Article
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Chromatic dispersion monitoring is demonstrated for a 10 GHz train of 3 ps pulses at −45 dBm coupled average power and 100 ms sampling period by using a chirped quasi-phase-matched LiNbO3 waveguide with 625 GHz active bandwidth. The feasibility of monitoring 10 GHz, 24 ps pulses at −40 dBm power is verified by intensity autocorrelation measurements. - Author(s): L. Zhou and D.W.E. Allsopp
- Source: Electronics Letters, Volume 41, Issue 9, p. 556 –557
- DOI: 10.1049/el:20058350
- Type: Article
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All-optical wavelength conversion is demonstrated, based on cross-bias modulation induced by the photocurrent that results from absorbing the incoming optical carrier directly in an electroabsorption modulator connected to a series resistor. The wavelength conversion was achieved with an efficiency ≥0.25 over a probe wavelength range of 1540–1560 nm.
All-optical label processor/erasure for label swapping of 12.5 Gbit/s spectrally separated bit-serial DPSK label and payload
Error-free 250 km transmission in standard fibre using compact 10 Gbit/s chirp-managed directly modulated lasers (CML) at 1550 nm
Extremely low-loss 1.5%-Δ 32-channel athermal arrayed-waveguide grating multi/demultiplexer
FTTx automated test solution: requirements and experimental implementation
Generation and transmission performance of 40 Gbit/s polarisation shift keying signal
Integrated SOA-MZI for pattern-effect-free amplification
Monolithically integrated eight-channel WDM modulators with cyclic AWGs for multichannel-block operation over C-band
Optimal bidirectional Raman pumping in dispersion-shifted fibres for WDM inter-channel FWM reduction
Ultrasensitive chromatic dispersion monitoring for 10 GHz pulse train by quasi-phase-matched LiNbO3 waveguides
Wavelength conversion in electroabsorption modulators by cross-bias modulation
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- Author(s): C.-Y. Kim ; J.-H. Cha ; J. Kim ; Y.-S. Kwon
- Source: Electronics Letters, Volume 41, Issue 9, p. 557 –559
- DOI: 10.1049/el:20050005
- Type: Article
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The InP/InGaAsP double heterojunction (DH) solar cell to increase the short-circuit current is investigated. The InP/InGaAsP DH solar cell has been newly designed having a 1.12 eV InGaAsP absorption layer. Increases of 100% in short-circuit current and 50.18% in efficiency for the DH device are observed over the control sample. - Author(s): N. Jin ; S.-Y. Chung ; R. Yu ; P.R. Berger ; P.E. Thompson
- Source: Electronics Letters, Volume 41, Issue 9, p. 559 –560
- DOI: 10.1049/el:20050020
- Type: Article
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The temperature dependent DC/RF performance of Si-based resonant interband tunnelling diodes (RITDs) grown by low temperature molecular beam epitaxy was studied. Both DC and RF performance were measured at various temperatures from 20 to 150°C. At 20°C, the RITD exhibits a peak current density ( Jp) of 22 kA/cm2 with peak-to-valley current ratio (PVCR) of 2.0. The maximum resistive cutoff frequency (fr0) of 2.4 GHz was obtained by biasing the diode at 320 mV. Increasing temperature slightly degrades the PVCR and fr0. At 150°C, the PVCR and fr0 reduced to 1.8 and 1.9 GHz, respectively. The observed weak temperature dependence of the DC/RF performance and the GHz operating frequency make Si/SiGe RITDs a good candidate for high power microwave applications. - Author(s): G. Roelkens ; D. Van Thourhout ; R. Baets
- Source: Electronics Letters, Volume 41, Issue 9, p. 561 –562
- DOI: 10.1049/el:20050807
- Type: Article
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The bonding of InP/InGaAsP heterostructures dies onto an SOI substrate is reported. Bonding layer thicknesses down to 200 nm were reproducibly achieved. Bonding was achieved both on unprocessed SOI substrates as on processed SOI substrates containing high index contrast waveguides.
Improvement of short-circuit current of InP/InGaAsP/InP double heterojunction solar cells
Temperature dependent DC/RF performance of Si/SiGe resonant interband tunnelling diodes
Ultra-thin benzocyclobutene bonding of III–V dies onto SOI substrate
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- Author(s): P. Alku ; M. Airas ; T. Bäckström ; H. Pulakka
- Source: Electronics Letters, Volume 41, Issue 9, p. 562 –563
- DOI: 10.1049/el:20050643
- Type: Article
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The estimation of the excitation of voiced speech, or the glottal flow, is usually carried out using inverse filtering, where vocal tract resonances are cancelled from the speech signal. The parameters of inverse filtering are typically adjusted using subjective evaluations of estimated flow signals. Proposed is a method to assess objectively the quality of inverse filtered glottal flows. The method computes the group delay function over a single cycle of the estimated flow. Incorrect settings of the inverse result in the distortion of the group delay function. This distortion is easily detectable and can be used in a straightforward manner to quantify how accurately the zeros of the inverse filter match the poles of the vocal tract.
Using group delay function to assess glottal flows estimated by inverse filtering
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- Author(s): S. De Vuyst ; S. Wittevrongel ; H. Bruneel
- Source: Electronics Letters, Volume 41, Issue 9, p. 564 –565
- DOI: 10.1049/el:20050116
- Type: Article
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The delay of both high and low priority packets in a discrete-time queue operating under a reservation discipline is studied. The delay distribution is obtained from which closed-form expressions for the mean, variance and the tail distribution are derived. In an example, performance is compared with that of Absolute Priority and FIFO. - Author(s): E. Alameda-Hernández ; D.C. McLernon ; A.G. Orozco-Lugo ; M. Lara ; M. Ghogho
- Source: Electronics Letters, Volume 41, Issue 9, p. 565 –567
- DOI: 10.1049/el:20050900
- Type: Article
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The problem of superimposed training (ST) channel estimation is addressed. In particular, it presents a new synchronisation technique for ST that is based on subspace projections and is computationally much simpler than a recently published synchronisation method. Nevertheless, the performance in terms of BER of both methods is virtually the same.
Delay differentiation by reserving space in queue
Synchronisation for superimposed training based channel estimation
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- Type: Article
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Experimental verification of on-chip CMOS fractional-order capacitor emulators
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54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
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