Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 41, Issue 24, 24 November 2005
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Volume 41, Issue 24
24 November 2005
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- Author(s): S.W. Han ; Y.S. Park ; D.P. Neikirk
- Source: Electronics Letters, Volume 41, Issue 24, p. 1307 –1308
- DOI: 10.1049/el:20053445
- Type: Article
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Conventional infrared microbolometers are usually designed for use over only one infrared band. Here we consider various bolometer layer stacks and use a genetic algorithm to find designs that achieve maximised broadband spectral response over the entire mid and long wavelength infrared bands (3–13 µm). - Author(s): H. Kwon and B. Lee
- Source: Electronics Letters, Volume 41, Issue 24, p. 1308 –1310
- DOI: 10.1049/el:20052940
- Type: Article
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A compact slotted PIFA-type RFID tag (900 MHz) mountable on metallic objects is presented. The proposed structure can be easily matched to most microchips and facilitates their attachment on its slot. The performance of the tag is evaluated by monitoring its radar cross-sections (RCSs) for various incident angles and chip impedances. The measured detection distance is 4 m. - Author(s): S. Fitz ; A. Gonzalez-Velazquez ; I. Henning ; T. Khan
- Source: Electronics Letters, Volume 41, Issue 24, p. 1310 –1311
- DOI: 10.1049/el:20053675
- Type: Article
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A wireless link layer designed for a spatially distributed, ad hoc multi-hop wireless sensor network for use in oceanography is described. - Author(s): S. Simms and V. Fusco
- Source: Electronics Letters, Volume 41, Issue 24, p. 1311 –1313
- DOI: 10.1049/el:20053236
- Type: Article
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Experimental verification is provided of the radar absorbing properties of an ultra-thin radar absorber. The absorber uses a commercially available conductive textile material uniformly coated with doped conducting polymer. The material is placed at a height of 0.12λ above a 4.6 GHz artificial magnetic ground plane. It is shown that with this arrangement better than −18 dB reflection loss can be obtained at 4.42 GHz. - Author(s): J. Jung ; K. Seol ; W. Choi ; J. Choi
- Source: Electronics Letters, Volume 41, Issue 24, p. 1313 –1314
- DOI: 10.1049/el:20053114
- Type: Article
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A small, wideband microstrip-fed monopole antenna for mobile communication systems, is designed. The antenna has a wide bandwidth ranging from 1.65 to 10.6 GHz for S11<−10 dB. Various mobile communication services such as DCS, WCDMA, UMTS, WiBro, WLAN, DMB and UWB can easily be covered by the proposed antenna simultaneously. Details of the antenna design and measured results are presented and discussed.
Broadband infrared detection using Jaumann absorbers with genetic algorithm
Compact slotted planar inverted-F RFID tag mountable on metallic objects
Experimental investigation of wireless link layer for multi-hop oceanographic-sensor networks
Thin radar absorber using artificial magnetic ground plane
Wideband monopole antenna for various mobile communication applications
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- Author(s): S. Perri ; P. Corsonello ; G. Cocorullo
- Source: Electronics Letters, Volume 41, Issue 24, p. 1314 –1316
- DOI: 10.1049/el:20053313
- Type: Article
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A new methodology for realising efficient multiply architectures for FPGAs is presented. The proposed strategy can be recursively applied to realise larger multipliers. Compared to proprietary macroblocks usually furnished within FPGA development tools, the new approach is more than 45% cheaper and more than 25% faster. - Author(s): Y.S. Yu ; H.W. Kye ; B.N. Song ; S.-J. Kim ; J.-B. Choi
- Source: Electronics Letters, Volume 41, Issue 24, p. 1316 –1317
- DOI: 10.1049/el:20053134
- Type: Article
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A new multi-valued static random access memory (MVSRAM) cell with a hybrid circuit consisting of a single-electron (SE) and MOSFETs is proposed. The previously reported MVSRAM with an SE-MOSFET hybrid circuit needs two data lines, one bit line for write operations and one sense line for read operations, to improve the speed of the read-out operation, but the proposed cell has only one data line for read/write operations, resulting in a memory area that is much smaller than that of the previous cell, without any reduction of read-out speed.
Efficient recursive multiply architecture for FPGAs
Multi-valued static random access memory (SRAM) cell with single-electron and MOSFET hybrid circuit
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- Author(s): S. O'Keeffe ; C. Fitzpatrick ; E. Lewis
- Source: Electronics Letters, Volume 41, Issue 24, p. 1317 –1319
- DOI: 10.1049/el:20052901
- Type: Article
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Ozone measurement based on the optical absorption of visible light at 603 nm using polymer optical fibres is investigated and tested. Comparisons with a commercial UV based sensor demonstrate the ability of the visible based sensor to measure high concentrations over a range 27--127 mg/litre. A resolution of 5 mg/litre is also demonstrated for this sensor.
Ozone measurement in visible region: an optical fibre sensor system
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- Author(s): C.W. Lee and H. Ko
- Source: Electronics Letters, Volume 41, Issue 24, p. 1319 –1320
- DOI: 10.1049/el:20052749
- Type: Article
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An arbitrary L/M-fold image resizing method using lapped transforms is presented. The resizing operation is carried out in the lapped transform domain, by converting the images in the discrete cosine transform (DCT) domain into those in the lapped transform domain and vice versa. The proposed method provides visually fine images, while reducing the blocking effect to a very low level for images compressed at low bit rates. - Author(s): P.R. Liu ; M.Q.-H. Meng ; P.X. Liu
- Source: Electronics Letters, Volume 41, Issue 24, p. 1320 –1322
- DOI: 10.1049/el:20053620
- Type: Article
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A novel geodesic active contour model based on optical flow information is proposed to segment and detect the moving object for monocular robots. More specifically, an active contour is formulated using the level set method, which eliminates the need of re-initialisation. The developed scheme alleviates the effect of optical flow noise, increasing the robustness of the detection of moving objects. Experimental results show that this algorithm can successfully track a moving target, e.g. a human being.
Arbitrary resizing of images in DCT domain using lapped transforms
Moving object segmentation and detection for monocular robot based on active contour model
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- Author(s): J. Rhee and Y. Joo
- Source: Electronics Letters, Volume 41, Issue 24, p. 1322 –1323
- DOI: 10.1049/el:20053477
- Type: Article
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A new dual-mode wide dynamic range CMOS image sensor is designed, which is capable of two different operating modes: logarithmic and floating point mode. The proposed sensor can choose the operating mode manually or adaptively. A prototype pixel is designed and tested with standard 0.5 µm CMOS process. - Author(s): S.Y. Cho
- Source: Electronics Letters, Volume 41, Issue 24, p. 1323 –1325
- DOI: 10.1049/el:20053464
- Type: Article
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Based on a Euclidean norm of the normalised magnetic compass signal and a sign determination of a magnetic compass signal, an enhanced estimation method of a virtual third‐axis signal of a magnetic compass is proposed. The proposed method is efficient in tilt compensation of a biaxial magnetic compass.
Dual-mode wide dynamic range CMOS active pixel sensor
Enhanced tilt compensation method for biaxial magnetic compass
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- Author(s): S. Lee
- Source: Electronics Letters, Volume 41, Issue 24, p. 1325 –1327
- DOI: 10.1049/el:20053024
- Type: Article
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An accurate RF method using a linear regression of high-frequency Z-parameter equations at zero gate voltage is developed to extract resistances and inductances of sub-0.1 µm MOSFETs. Good agreement between the measured and modelled S-parameters is observed up to 30 GHz, verifying the accuracy of the RF method. - Author(s): A. Uranga ; J. Teva ; J. Verd ; J.L. López ; F. Torres ; J. Esteve ; G. Abadal ; F. Pérez-Murano ; N. Barniol
- Source: Electronics Letters, Volume 41, Issue 24, p. 1327 –1328
- DOI: 10.1049/el:20053473
- Type: Article
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The development of a novel fully integrated microelectromechanical system (MEMS) for RF purposes is presented. It is composed of a paddle polysilicon micro-resonator electrostatically excited and a capacitive CMOS read-out amplifier. The micro-resonator is fabricated directly on a commercial CMOS technology, only requiring a wet etching process for the release of the resonant structure after the full CMOS integration. Electrical characterisation of the on-chip resonant device has been performed showing a resonance frequency near 100 MHz.
Accurate RF extraction method for resistances and inductances of sub-0.1 µm CMOS transistors
Fully CMOS integrated low voltage 100 MHz MEMS resonator
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- Author(s): Y.Q. Wei ; M. Sadeghi ; S.M. Wang ; P. Modh ; A. Larsson
- Source: Electronics Letters, Volume 41, Issue 24, p. 1328 –1330
- DOI: 10.1049/el:20053210
- Type: Article
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The use of multiple quantum wells and GaAs barriers favours the temperature stability and modulation bandwidth of GaInNAs lasers. It is shown that a very low threshold current density and a high characteristic temperature can be achieved for GaInNAs/GaAs double quantum well lasers, emitting at 1.28 µm, when grown by molecular beam epitaxy under favourable conditions. - Author(s): I. Krestnikov ; D. Livshits ; S. Mikhrin ; A. Kozhukhov ; A. Kovsh ; N. Ledentsov ; A. Zhukov
- Source: Electronics Letters, Volume 41, Issue 24, p. 1330 –1331
- DOI: 10.1049/el:20053336
- Type: Article
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Ridge-waveguide lasers with an InAs/InGaAs quantum dot active region have been subjected to accelerated ageing at 65 and 85°C. No sudden failure was found during the 2070 h test. Activation energy of 0.79 eV was estimated, suggesting the 40°C-lifetime >106 h. - Author(s): C. Pflügl ; M. Austerer ; W. Schrenk ; G. Strasser
- Source: Electronics Letters, Volume 41, Issue 24, p. 1331 –1333
- DOI: 10.1049/el:20053388
- Type: Article
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Emission of coherent light at 5.1 µm wavelength from GaAs-based quantum cascade lasers is reported. This was achieved by integrating nonlinear cascades with large second-order susceptibility in the active regions of the laser.
High performance 1.28 µm GaInNAs double quantum well lasers
Reliability study of InAs/InGaAs quantum dot diode lasers
Second-harmonic generation in GaAs-based quantum-cascade lasers grown on 〈100〉 substrates
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- Author(s): J. Kim ; C.S. Cho ; J.W. Lee
- Source: Electronics Letters, Volume 41, Issue 24, p. 1333 –1334
- DOI: 10.1049/el:20053306
- Type: Article
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The bandstop characteristic of a slot-type split-ring resonator (SRR) on a substrate used for microwave frequencies is presented for a bandstop filter. Analogously to the conventional strip-type SRR, the slot-type SRR is very attractive for notching unwanted band because of its small dimension and high Q operation. In addition, the complementary SRR can be easily applied for coplanar configuration, which is favourable to MMIC designs. Based on the simulation and measurement results, the slot-type SRR for the bandstop filter is very effective in rejecting unwanted frequency in terms of its selectivity and size. - Author(s): M.H. Awida ; A.M.E. Safwat ; H. El-Hennawy
- Source: Electronics Letters, Volume 41, Issue 24, p. 1335 –1336
- DOI: 10.1049/el:20053290
- Type: Article
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A dual-mode microstrip bandpass filter using the degenerate modes of a modified square ring structure is proposed. The size of the new structure is 50% less than conventional dual-mode bandpass microstrip square resonator filters at the same centre frequency. Measurements are in good agreement with designed values. - Author(s): J.-X. Chen ; J.L. Li ; Q. Xue
- Source: Electronics Letters, Volume 41, Issue 24, p. 1336 –1337
- DOI: 10.1049/el:20053474
- Type: Article
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A novel lowpass filter using offset double-sided parallel-strip lines (DSPSL) is proposed. The proposed lowpass filter has the advantages of enhanced stopband and high power-handling capability compared with the conventional microstrip lowpass filter, because the high impedance is realised by offsetting the top and bottom strips of DSPSL without decreasing the width of strips. The theoretical and measured results are presented. - Author(s): H. Wang and L. Zhu
- Source: Electronics Letters, Volume 41, Issue 24, p. 1337 –1338
- DOI: 10.1049/el:20053466
- Type: Article
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A novel ultra-wideband bandpass filter is proposed on a back-to-back microstrip-to-CPW transition structure. A multiple-mode resonator on a CPW is formed to allocate its first three resonant modes around the lower-end, centre and upper-end of the 3.1 to 10.6 GHz UWB passband. Its two sides are fed by two microstrip-to-CPW transitions with enhanced frequency-dispersive coupling degree. The designed filter exhibits good UWB passband behaviour with insertion loss <0.5 dB and group delay variation <0.35 ns.
CPW bandstop filter using slot-type SRRs
Dual-mode microstrip bandpass filter using ring of arrows resonator
Lowpass filter using offset double-sided parallel-strip lines
Ultra-wideband bandpass filter using back-to-back microstrip-to-CPW transition structure
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- Author(s): B.T. Maharaj ; J.W. Wallace ; L.P. Linde ; M.A. Jensen
- Source: Electronics Letters, Volume 41, Issue 24, p. 1338 –1340
- DOI: 10.1049/el:20053426
- Type: Article
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Multiple-input multiple-output (MIMO) double-directional spatial channel responses for co-located indoor measurements at 2.4 and 5.2 GHz using eight element uniform circular arrays are compared. Correlation coefficients of the power spectra demonstrate a linear dependence, indicating similarity in propagation mechanisms at the two frequencies. - Author(s): C. Mun ; J.-K. Han ; D.-H. Kim
- Source: Electronics Letters, Volume 41, Issue 24, p. 1340 –1342
- DOI: 10.1049/el:20052595
- Type: Article
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Proposed is multimode basis selection in which the active bases are selected at the receiver from the common unitary basis set known at both receiving and transmitting ends, conveyed to the transmitter using limited feedback, and assembled into a precoding matrix at the transmitter. It is shown that the proposed multimode basis selection scheme outperforms both multimode antenna selection and Grassmannian multimode precoding in capacity in correlated fading channels without additional complexity and feedback.
Linear dependence of double-directional spatial power spectra at 2.4 and 5.2 GHz from indoor MIMO channel measurements
Multimode basis selection for spatial multiplexing with limited feedback
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- Author(s): I. Monfils ; C. Ito ; J.C. Cartledge
- Source: Electronics Letters, Volume 41, Issue 24, p. 1342 –1343
- DOI: 10.1049/el:20053339
- Type: Article
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All-optical clock recovery using a three-section self-pulsating DFB laser with optical feedback is demonstrated. The feedback of a wavelength-converted clock signal reduces the dependence on the input data signal power, decreases the jitter by up to 2.7 ps, and increases the extinction ratio by 6.5 dB. - Author(s): T. Jayasinghe ; C.J. Chae ; R.S. Tucker
- Source: Electronics Letters, Volume 41, Issue 24, p. 1343 –1345
- DOI: 10.1049/el:20053303
- Type: Article
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A technique for rebroadcasting of multiple broadband services in a clustered community served by a passive optical network is introduced. The scheme uses a common regenerator and utilises the existing fibre plant and customer units, reducing the infrastructure cost.
10 Gbit/s all-optical clock recovery using three-section DFB laser with optical feedback
Rebroadcasting of broadband services over passive optical network in residential community
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- Author(s): J.W. Raring ; E.J. Skogen ; M.L. Mašanović ; S.P. DenBaars ; L.A. Coldren
- Source: Electronics Letters, Volume 41, Issue 24, p. 1345 –1346
- DOI: 10.1049/el:20053248
- Type: Article
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The performance of semiconductor optical amplifiers (SOAs) employing regions of high and low optical confinement designed for high saturation power and high gain using a novel quantum well intermixing and MOCVD regrowth fabrication scheme is reported. The scheme enables the monolithic integration of high performance SOAs with high gain laser diodes, high efficiency electroabsorption modulators, and high saturation power photodiodes. The SOAs presented exhibit saturation powers in the 19 to 20 dBm range with nearly 15 dB of gain. - Author(s): F.G. Sedgwick ; C.J. Chang-Hasnain ; P.C. Ku ; R.S. Tucker
- Source: Electronics Letters, Volume 41, Issue 24, p. 1347 –1348
- DOI: 10.1049/el:20052258
- Type: Article
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Performance of slow-light optical buffers in a digital transmission link is simulated. Error rates are calculated for various bit rates and storage (number of bits stored). For a given power penalty, it is shown that storage-bit-rate product is a constant, suggesting an alternative performance metric to the delay-bandwidth product.
Demonstration of high saturation power/high gain SOAs using quantum well intermixing based integration platform
Storage-bit-rate product in slow-light optical buffers
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- Author(s): S. Ng ; S. Abdalla ; P. Barrios ; A. Delâge ; S. Janz ; R. McKinnon ; B. Syrett
- Source: Electronics Letters, Volume 41, Issue 24, p. 1348 –1350
- DOI: 10.1049/el:20053357
- Type: Article
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A compact InGaAsP/InP waveguide bend loss attenuator with electrically modulated bend loss is demonstrated. The carrier injection device exhibits better than 15 dB modulation and <20 ns response time. The bend loss attenuator requires less than half the current of a comparable straight waveguide attenuator to achieve 3 dB attenuation. - Author(s): J.F. Aquino and E.A. de Souza
- Source: Electronics Letters, Volume 41, Issue 24, p. 1350 –1351
- DOI: 10.1049/el:20053476
- Type: Article
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A differential and direction-sensitive device capable of detecting and locating intensity variations with angular resolution is presented. The device consisting of four conventional photodetectors integrated with a pair of GaAs quantum-well modulators measures intensity variations at angles of nπ/4 (n=1, 3, 5, …) with respect to the x-direction.
Bend loss attenuator by carrier injection in InGaAsP/InP
Differential and direction-sensitive detector based on self-electro-optic effect in GaAs multiple quantum well
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- Author(s): D. Flynn ; A. Toon ; M.P.Y. Desmulliez
- Source: Electronics Letters, Volume 41, Issue 24, p. 1351 –1353
- DOI: 10.1049/el:20053257
- Type: Article
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A novel method to manufacture a micro-inductor that is based on flip-chip bonding assembly is described. The micro-inductor is developed for DC-DC converters operating in the MHz switching frequency. The fabricated inductors have an inductance ranging from 0.12 to 118 µH. An optimum Q-factor of 2 was attained at 1 MHz. Nickel-iron cores with integrated air-gaps maintained a constant inductance across a 1 kHz–5 MHz bandwidth. The thin film laminate minimised eddy current loss and hysteresis loss was negligible. Impedance increased linearly with frequency, indicating that parasitic capacitance effects in this frequency range were negligible. The micro-inductor operated at an efficiency of 92% at 1 MHz, achieving a power density of 4.2 W/cm3.
Manufacture and characterisation of micro-engineered DC-DC power converter using UV-LIGA process
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- Author(s): N. Singh ; A. Agarwal ; L.K. Bera ; R. Kumar ; G.Q. Lo ; B. Narayanan ; D.L. Kwong
- Source: Electronics Letters, Volume 41, Issue 24, p. 1353 –1354
- DOI: 10.1049/el:20053195
- Type: Article
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The fabrication of lateral ultra-narrow fin body (thickness ≤10 nm) gate-all-around MOSFETs, which exhibit excellent gate electrostatic control over the channel, is presented. The narrow fins were formed using alternating phase DUV lithography and low temperature oxidation of Si. The device characteristics are completely free from substrate bias effects. - Author(s): G. Luo ; C.-C. Cheng ; C.-Y. Huang ; S.-L. Hsu ; C.-H. Chien ; W.-X. Ni ; C.-Y. Chang
- Source: Electronics Letters, Volume 41, Issue 24, p. 1354 –1355
- DOI: 10.1049/el:20052999
- Type: Article
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A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.
Gate-all-around MOSFETs: lateral ultra-narrow (≤10 nm) fin as channel body
Suppressing phosphorus diffusion in germanium by carbon incorporation
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- Author(s): D.P. Morgan
- Source: Electronics Letters, Volume 41, Issue 24, p. 1355 –1357
- DOI: 10.1049/el:20053292
- Type: Article
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Several new materials for SAW devices exhibit the natural SPUDT (N-SPUDT) effect, which causes an SAW transducer to generate waves with different amplitudes in the two directions. In general, SAW devices on such materials need to be designed allowing for the complications introduced by this effect. A design method for one-port resonators is derived, valid if the resonance frequency and the Bragg frequencies of the transducer and gratings are all different. The design is versatile enough to remain valid if the N-SPUDT effect is absent.
Design method for SAW resonators using natural SPUDT substrates
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