Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 41, Issue 13, 23 June 2005
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Volume 41, Issue 13
23 June 2005
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- Author(s): M. Ritamäki ; A. Ruhanen ; V. Kukko ; J. Miettinen ; L.H. Turner
- Source: Electronics Letters, Volume 41, Issue 13, p. 723 –724
- DOI: 10.1049/el:20051029
- Type: Article
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A contactless method of measuring the radiation pattern of a UHF RFID transponder is presented. The novel technique does not require any special transponder IC or measurement equipment. The measurement method also enables radiation pattern determination in the end-use application. The measurement setup and some example results are presented. - Author(s): T. Quach ; D.A. McNamara ; A. Petosa
- Source: Electronics Letters, Volume 41, Issue 13, p. 724 –725
- DOI: 10.1049/el:20050680
- Type: Article
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The influence of the substrate, and the use of a realistic primary wavefront, on the interference pattern utilised in the synthesis of a planar holographic is examined. It is demonstrated that the inclusion of these effects improves the antenna directivity. - Author(s): E. Sáenz ; I. Ederra ; R. Gonzalo ; P. de Maagt
- Source: Electronics Letters, Volume 41, Issue 13, p. 725 –727
- DOI: 10.1049/el:20051370
- Type: Article
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Results showing the experimental verification of the transmission improvement when a left-handed material (LHM) is placed in between rectangular waveguides are presented. This improvement has been characterised by means of measuring the increase of transmission (S21 parameter) and is related to the enhancement of the radiating features of an open-ended waveguide caused by the use of the LHM as superstrate.
Contactless radiation pattern measurement method for UHF RFID transponders
Holographic antenna realised using interference patterns determined in presence of dielectric substrate
Transmission enhancement between rectangular waveguides by means of left-handed media
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- Author(s): J. Zheng
- Source: Electronics Letters, Volume 41, Issue 13, p. 727 –728
- DOI: 10.1049/el:20050764
- Type: Article
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A differential singlemode fibre frequency-modulated continuous-wave Sagnac gyroscope is described. The gyroscope employs two Y-type fibre-optic directional couplers, two X-type fibre-optic directional couplers and a singlemode fibre coil to construct a time-division-multiplexed unbalanced fibre-optic Sagnac interferometer. The rotation velocity of the fibre coil is determined by measuring the phase difference between the two beat signals. Benefiting from the differential technique, this gyroscope can automatically eliminate the unexpected non-reciprocal phase drift (including the frequency drift of the light source) so that the accuracy and long-term stability can be significantly improved. - Author(s): F. Liégeois ; Y. Hernandez ; G. Peigné ; F. Roy ; D. Hamoir
- Source: Electronics Letters, Volume 41, Issue 13, p. 729 –730
- DOI: 10.1049/el:20050496
- Type: Article
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A novel single-longitudinal-mode erbium-doped ring fibre laser is proposed and demonstrated experimentally. It combines a narrow-linewidth fibre Bragg grating (FBG) with several Mach-Zehnder mode filters (MZF) to obtain a single-frequency emission. It yields a power conversion efficiency of 16%. It is shown that the sidemodes are suppressed when one inserts the series of MZFs inside the cavity. At 1547 nm, the output power measures over 15 dBm, with a sidemode suppression ratio of 50 dB and a linewidth of no more than 7 kHz. - Author(s): H. Cao ; L.R. Chen ; J. Magné ; S. LaRochelle
- Source: Electronics Letters, Volume 41, Issue 13, p. 730 –732
- DOI: 10.1049/el:20050796
- Type: Article
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A wavelength-tunable 4×10 GHz optically modelocked semiconductor fibre ring laser is demonstrated. A semiconductor optical amplifier (SOA) is used as a gain medium and optically controlled mode-locking element, in addition to four superimposed linearly chirped fibre Bragg gratings to provide tunable, multi-wavelength operation. The four wavelengths can be tuned simultaneously with constant wavelength separation by changing the modulation frequency.
Differential singlemode fibre frequency-modulated continuous-wave Sagnac gyroscope
High-efficiency, single-longitudinal-mode ring fibre laser
Tunable 4×10 GHz optically modelocked semiconductor fibre laser
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- Author(s): S. Mehta and R. Etienne-Cummings
- Source: Electronics Letters, Volume 41, Issue 13, p. 732 –733
- DOI: 10.1049/el:20058433
- Type: Article
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A 92×52 active pixel sensor (APS) for dense normal flow estimation is presented. The sensor combines imaging and processing on the same chip efficiently. The algorithm computes partial derivatives with respect to time and space and uses their ratio to compute normal flow velocity. The chip, which has been fabricated in a CMOS 0.5 µm process, occupies an area of 4.5 mm2 and consumes 2.6 mW power at Vdd=5 V. - Author(s): B.H. Pathak ; G. Childs ; M. Ali
- Source: Electronics Letters, Volume 41, Issue 13, p. 733 –735
- DOI: 10.1049/el:20051314
- Type: Article
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An unequal error protection (UEP) scheme is proposed which complies with the UMTS standards defined by 3GPP and is also customised according to the requirements of the video codec (MPEG-4), channel conditions and bandwidth limitations. The results show significant PSNR and frame loss saving improvements.
Normal optical flow measurement on CMOS APS imager
UEP implementation for MPEG-4 video quality improvement on RLC layer of UMTS
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- Author(s): A. Ishibashi ; H. Kaiju ; Y. Yamagata ; N. Kawaguchi
- Source: Electronics Letters, Volume 41, Issue 13, p. 735 –736
- DOI: 10.1049/el:20051053
- Type: Article
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Analysis of achieving a clean environment in a connected box-units system is performed. By feedback of outlet air into the inlet of the box-unit, the steady-state airborne-particle-count in the system becomes independent of the ambient particle count and depends little on the particle-arrest efficiency of the filter. It is demonstrated that ISO 3 (209D Class 1) cleanliness in an inexpensive compact manner with the versatile extensive connected box-units system can be realised, no matter how dusty the ambient.
Connected box-units-based compact highly clean environment for cross-disciplinary experiments platform
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- Author(s): J.-G. Lee ; J.-H. Woo ; B.-S. Kong ; Y.-H. Jun ; C.-G. Lee
- Source: Electronics Letters, Volume 41, Issue 13, p. 736 –737
- DOI: 10.1049/el:20051138
- Type: Article
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A novel source driving scheme called opportunistic multichannel driving (OMCD) is proposed for use in mobile TFT-LCD driver ICs (T-LDIs). In the OMCD scheme, the operation of the source drivers of a T-LDI is controlled by the equivalence of RGB colour data for adjacent pixels. That is, one source driver drives the neighbouring source lines as well as the corresponding one when the colour data of adjacent pixcels are identical to each other. With this scheme, all the source drivers associated with the neighbouring source lines can be completely turned off, allowing the reduction of static and dynamic current of these drivers. A test chip was fabricated in a 5 V/0.8 µm 2.5 V/0.25 µm triple-metal CMOS process, and the experimental result shows that the power reduction of 12–21% was obtained with die size overhead less than 0.5%.
Opportunistic multichannel driving scheme for low power mobile TFT-LCD driver IC
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- Author(s): M. Shokooh-Saremi ; V.G. Ta'eed ; I.C.M. Littler ; D.J. Moss ; B.J. Eggleton ; Y. Ruan ; B. Luther-Davies
- Source: Electronics Letters, Volume 41, Issue 13, p. 738 –739
- DOI: 10.1049/el:20050981
- Type: Article
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The first ultra-strong, near-perfect, raised-apodised Bragg gratings in As2S3 chalcogenide rib waveguides using λ=532 nm light and a modified Sagnac holographic writing setup are demonstrated. Good agreement is achieved between the experimental results and the numerical modelling of the gratings using the transfer matrix analysis for thin film structures.
Ultra-strong, well-apodised Bragg gratings in chalcogenide rib waveguides
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- Author(s): M. Kauer ; S.E. Hooper ; V. Bousquet ; K. Johnson ; C. Zellweger ; J.M. Barnes ; J. Windle ; T.M. Smeeton ; J. Heffernan
- Source: Electronics Letters, Volume 41, Issue 13, p. 739 –741
- DOI: 10.1049/el:20051430
- Type: Article
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The first continuous-wave InGaN multiple quantum well laser diodes grown by molecular beam epitaxy are reported. Ridge waveguide lasers are fabricated on free-standing GaN substrates and operated at room temperature under continuous-wave current injection. For 2.2×1000 µm lasers with highly reflective facet coatings a continuous-wave threshold current of 125 mA is obtained, corresponding to a threshold current density of 5.7 kA cm−2. The lasers have a threshold voltage of 8.6 V and lase at a wavelength of ∼405 nm for >3 min at 20°C. - Author(s): M.V. Maximov ; Yu.M. Shernyakov ; I.I. Novikov ; S.M. Kuznetsov ; L.Ya. Karachinsky ; N.Yu. Gordeev ; V.P. Kalosha ; V.A. Shchukin ; N.N. Ledentsov
- Source: Electronics Letters, Volume 41, Issue 13, p. 741 –742
- DOI: 10.1049/el:20051457
- Type: Article
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GaInP/AlGaInP visible lasers based on a longitudinal photonic bandgap crystal waveguide emitting at 646 nm show narrow circular shaped far field pattern. Vertical and lateral beam divergence of about 8° (full width at half maximum) that is independent of injection current is demonstrated. Differential quantum efficiency is up to 85%. Pulsed total optical output power is as high as 20 W for 100 µm-wide stripe lasers and 6 W for 20 µm-wide stripe lasers. Such values of output optical power are 2.5 higher with respect to ones obtained for the lasers fabricated from the state-of-the-art epiwafers for commercial 650 nm range DVD lasers. - Author(s): Z. Mi ; P. Bhattacharya ; J. Yang ; K.P. Pipe
- Source: Electronics Letters, Volume 41, Issue 13, p. 742 –744
- DOI: 10.1049/el:20051558
- Type: Article
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The first room-temperature operation of In0.5Ga0.5As quantum dot lasers grown directly on Si substrates with a thin (≤2 µm) GaAs buffer layer is reported. The devices are characterised by Jth∼1500 A/cm2, output power >50 mW, and large T0 (244 K) and constant output slope efficiency (≥0.3 W/A) in the temperature range 5–95°C.
Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
High power GaInP/AlGaInP visible lasers (λ=646 nm) with narrow circular shaped far-field pattern
Room-temperature self-organised In0.5Ga0.5As quantum dot laser on silicon
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- Author(s): W.-S. Tung ; H.-C. Chiu ; Y.-C. Chiang
- Source: Electronics Letters, Volume 41, Issue 13, p. 744 –745
- DOI: 10.1049/el:20051179
- Type: Article
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This study presents the implementation of a millimetre-wave bandpass filter with conventional MMIC technology. The filter utilises the inductive π-network coupling structure to minimise the effect of process variation and achieve the desired circuit characteristics. The filter is very compact in size and can be precisely predicted by a commercial EM simulation tool. A 26 GHz filter prototype is designed and fabricated. The measured passband insertion loss is about 5 dB and the attenuations at the stop bands are all greater than 20 dB. - Author(s): C. Johansson and M. Robertsson
- Source: Electronics Letters, Volume 41, Issue 13, p. 745 –746
- DOI: 10.1049/el:20050974
- Type: Article
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A stepped impedance filter has been realised on a modified substrate. The change in impedance was achieved by varying the dielectric constant in the substrate while maintaining a constant width of the microstrip. In contrast to conventional stepped impedance filters the impedance is varied by the dielectric constant instead of the microstrip line width. The manufactured filter was measured and compared with an equivalent conventional stepped impedance filter. It is shown that the modified substrate technology could offer an alternative to the standard approach for the stepped impedance filter. In combination with new materials with a high permittivity the technology could also offer a denser package since the microstrip width could be controlled as desired.
Implementation of millimetre-wave bandpass filter with MMIC technology
Microstrip stepped impedance filters with variable dielectric or variable width
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- Author(s): N.C. Beaulieu and P. Tan
- Source: Electronics Letters, Volume 41, Issue 13, p. 746 –748
- DOI: 10.1049/el:20050902
- Type: Article
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The effect of several Nyquist pulse-shapings, including the Franks pulse, the raised-cosine pulse, the ‘better than’ raised-cosine pulse, the second-order continuous window, and the polynomial pulse on inter-carrier interference reduction in OFDM systems with carrier frequency offset is studied. - Author(s): T. Scholand ; T. Faber ; A. Seebens ; J. Lee ; J. Cho ; Y. Cho ; H.W. Lee ; P. Jung
- Source: Electronics Letters, Volume 41, Issue 13, p. 748 –749
- DOI: 10.1049/el:20050644
- Type: Article
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A system concept, combining orthogonal frequency division multiplexing (OFDM) with fast frequency hopping (FFH), termed FFH/OFDM concept, is illustrated. Data symbols in the frequency domain are mapped to time domain samples by a unitary transformation based on a shuffled version of the well-known inverse discrete Fourier transform. The FFH/OFDM concept shows a promising performance. - Author(s): P.R. King and S. Stavrou
- Source: Electronics Letters, Volume 41, Issue 13, p. 749 –751
- DOI: 10.1049/el:20051446
- Type: Article
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Satellite-MIMO, space-time coded for capacity gain, is investigated, and complementary cumulative distribution function outage and capacity predictions are provided using a verified physical-statistical MIMO land mobile-satellite channel model. Capacity results obtained for a single satellite, single antenna terminal (SISO), a dual satellite, single antenna terminal (2×1 MISO) and a dual satellite, dual antenna terminal (2×2 MIMO) system are compared, showing the benefit of satellite-MIMO. - Author(s): C. Williams ; M.A. Beach ; S. McLaughlin
- Source: Electronics Letters, Volume 41, Issue 13, p. 751 –752
- DOI: 10.1049/el:20051249
- Type: Article
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A new pre-FFT synchronisation method for OFDM is proposed and assessed, which gives improved performance in multipath channels. The technique can be used for a range of OFDM signal parameters, and channel environments. The relative increase in complexity over existing correlation-based methods is less than 10%. - Author(s): S. Yun ; S.Y. Park ; Y. Lee ; E. Alsusa ; C.G. Kang
- Source: Electronics Letters, Volume 41, Issue 13, p. 752 –754
- DOI: 10.1049/el:20050600
- Type: Article
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A practical resource management method that can significantly reduce cochannel interference (CCI) and improve spectrum utilisation in FH-OFDMA packet-based cellular networks is presented. The proposed method seeks an effective combination of dynamic resource allocation with fractional coding and bit loading to respectively minimise CCI and maximise system throughput for a desired performance.
Effect of transmitter Nyquist shaping on ICI reduction in OFDM systems with carrier frequency offset
Fast frequency hopping OFDM concept
Land mobile-satellite MIMO capacity predictions
Robust OFDM timing synchronisation
Spectrum efficient region-based resource allocation with fractional loading for FH-OFDMA cellular systems
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- Author(s): F. Argüello
- Source: Electronics Letters, Volume 41, Issue 13, p. 754 –755
- DOI: 10.1049/el:20050769
- Type: Article
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The binary GCD algorithm, discovered by Stein, is an alternative to the Euclidean algorithm for computing the greatest common divisor of two integers. In this work, the binary GCD algorithm is applied to Reed-Solomon decoding and a novel iterative algorithm for computing error locator polynomials is proposed. Compared to Euclidean-based algorithms, this algorithm exhibits some speed and area advantages. - Author(s): C.-H. Lee and W. Wolf
- Source: Electronics Letters, Volume 41, Issue 13, p. 755 –757
- DOI: 10.1049/el:20051060
- Type: Article
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It was recently shown that the reliability ratio based bit-flipping (RRWBF) decoding algorithm for low-density parity-check (LDPC) codes performs best among existing bit-flipping-based algorithms. A new version of this algorithm is proposed such that decoding time is significantly reduced, especially when the iteration number is small and the code length is large. Simulation results showed the proposed version has up to 2322.39%, 823.90%, 511.79%, and 261.92% speedup compared to the original algorithm on a UNIX workstation for 10, 30, 50, and 100 iterations. It is thus much more efficient to adopt this version for simulation and hardware implementation. Moreover, this version of the RRWBF algorithm provides a more intuitive way of interpreting its superior performance over other bit-flipping-based algorithms. - Author(s): Q. Luo and P. Sweeney
- Source: Electronics Letters, Volume 41, Issue 13, p. 757 –758
- DOI: 10.1049/el:20051217
- Type: Article
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The use of cross-entropy to analyse the convergence behaviour of a turbo decoder is proposed. Based on the new method, Eb/N0 thresholds are predicted and compared with those predicted by existing techniques. Simulation results show that the new technique is effective and advantageous in practical applications. - Author(s): P.K. Lala ; P. Thenappan ; M.T. Anwar
- Source: Electronics Letters, Volume 41, Issue 13, p. 758 –760
- DOI: 10.1049/el:20050614
- Type: Article
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A new coding technique for single error correction and double error detection in computer memory systems is proposed. The number of 1s in the parity check matrix for the proposed coding is fewer than all currently available codes for this purpose, except in two cases when they are almost equal to that obtained by Hsiao code. This results in simplified encoding and decoding circuitry for error detection and correction.
Binary GCD algorithm for computing error locator polynomials in Reed-Solomon decoding
Implementation-efficient reliability ratio based weighted bit-flipping decoding for LDPC codes
Method to analyse convergence of turbo codes
Single error correcting and double error detecting coding scheme
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- Author(s): D. Fonseca ; P. Monteiro ; A.V.T. Cartaxo
- Source: Electronics Letters, Volume 41, Issue 13, p. 760 –761
- DOI: 10.1049/el:20050702
- Type: Article
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A novel optical single sideband filter based on a phase modulator and electrical processing is proposed. Complete sideband suppression is theoretically achieved for intensity modulated carrier-unsuppressed optical signals with pulse shape transparency. Sideband suppression power ratio exceeding 15 dB is achieved for an optical non-return to zero signal using common electrical components. - Author(s): T.G. Silveira ; A.L.J. Teixeira ; P.M.N.P. Monteiro ; G.M. Tosi Beleffi
- Source: Electronics Letters, Volume 41, Issue 13, p. 761 –763
- DOI: 10.1049/el:20050748
- Type: Article
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A configuration to increase cross-gain modulation (XGM) bandwidth in semiconductor optical amplifiers by means of a detuned optical filter is proposed. A theoretical explanation is presented and experimental results for 10, 20 and 40 Gbit/s are presented. - Author(s): C. Dragone ; C.R. Doerr ; P. Bernasconi ; M. Cappuzzo ; E. Chen ; A. Wong-Foy ; L. Gomez
- Source: Electronics Letters, Volume 41, Issue 13, p. 763 –764
- DOI: 10.1049/el:20051269
- Type: Article
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For WDM optical networks an N×N wavelength router with substantially reduced losses using a novel waveguide grating design is demonstrated. - Author(s): K.-Å. Persson ; A. Alping ; D. Wake
- Source: Electronics Letters, Volume 41, Issue 13, p. 764 –766
- DOI: 10.1049/el:20051073
- Type: Article
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An electro-absorption transceiver has been evaluated for use as a remote antenna unit in a WCDMA in-building distributed antenna system. The experiment showed penalty-free transmission over a wide range of input and output RF powers. The ACLR limited the downlink output power to less than −28 dBm.
Adaptive optical single sideband filter based on a phase modulator
Cross-gain modulation bandwidth enhancement in semiconductor optical amplifiers by means of detuned optical filter
Low-loss N×N wavelength router
WCDMA radio-over-fibre transmission experiment using electro-absorption transceiver
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- Author(s): A. Densmore ; V.I. Tolstikhin ; K. Pimenov
- Source: Electronics Letters, Volume 41, Issue 13, p. 766 –767
- DOI: 10.1049/el:20051130
- Type: Article
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A practical approach for the design and manufacture of a monolithically integrated, multiple wavelength data receiver is presented. It utilises an InP-based, birefringence compensated echelle grating demultiplexer and high speed, singlemode, vertically integrated waveguide photodiodes. As an example of this approach, a 32-channel, C-band, polarisation independent data receiver chip operating at OC-3 (155 Mbit/s) bit rate is demonstrated with a compact footprint of 5×16 mm. - Author(s): E. Shumakher and G. Eisenstein
- Source: Electronics Letters, Volume 41, Issue 13, p. 768 –769
- DOI: 10.1049/el:20051552
- Type: Article
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The phase noise and spurious mode characteristics of a system comprising a mutually sustained microwave-optoelectronic oscillator pair are described. The two oscillators have different spectral purities and mode spacing and neither oscillates when they are decoupled. Only the mutually locked pair oscillates and exhibits low phase noise and highly suppressed spurious modes.
DWDM data receiver based on monolithic integration of an echelle grating demultiplexer and waveguide photodiodes
Noise properties of mutually sustained microwave-optoelectronic oscillator pair
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- Author(s): F. Medjdoub ; M. Zaknoune ; X. Wallart ; C. Gaquière ; D. Theron
- Source: Electronics Letters, Volume 41, Issue 13, p. 769 –771
- DOI: 10.1049/el:20051511
- Type: Article
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High power performances at 94 GHz using an innovating large bandgap InAsP channel high electron mobility transistor on InP substrate containing an InP/AlInAs composite barrier are reported. This 100 nm gate HEMT exhibits a high current density of 600 mA/mm, and an extrinsic transconductance of 850 mS/mm. The off state breakdown is greater than 5.5 V and defined at a gate current density of 1 mA/mm. At 94 GHz, they demonstrated a maximum output power of 260 mW/mm at 3 V of drain voltage with 5.9 dB power gain and a power added efficiency (PAE) of 11%. This is believed to be the best combination between output power density and power gain of any InP HEMT reported at this frequency. - Author(s): J. Zhao ; X. Wang ; L. Li
- Source: Electronics Letters, Volume 41, Issue 13, p. 771 –772
- DOI: 10.1049/el:20051328
- Type: Article
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Well-ordered titania nanotubes were fabricated in H3PO4/HF solution by an electrochemical method. Field emission scanning electron microscope images indicate diameters of the nanotubes vary from 10 to more than 100 nm with increasing applied voltages. Nanotube arrays of titania with a thickness of up to 1.1 µm have been fabricated. Preliminary research indicates the nanotubes are formed due to competition of titania formation and dissolution under assistance of the electric field. - Author(s): H.T. Kim ; I.C. Nam ; K.S. Kim ; K.H. Kim ; J.B. Choi ; J.U. Lee ; S.W. Kim ; G.C. Kang ; D.J. Kim ; K.S. Min ; D.W. Kang ; D.M. Kim
- Source: Electronics Letters, Volume 41, Issue 13, p. 772 –774
- DOI: 10.1049/el:20051108
- Type: Article
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This work presents a new method for extracting the intrinsic source and drain resistances in MOSFETs. This is based on the open-collector method in the parasitic bipolar junction transistor (sourcebody-drain) parallel to the MOSFET. By using the Ebers-Moll equivalent model for bipolar junction transistors, the source and drain resistances are extracted separately excluding the resistance formed by the LDD region. Combining the current-voltage characteristics under a linear operation mode of MOSFETs, we can also extract the LDD-parts in the total resistance. - Author(s): G. Simin ; V. Adivarahan ; J. Yang ; A. Koudymov ; S. Rai ; M. Asif Khan
- Source: Electronics Letters, Volume 41, Issue 13, p. 774 –775
- DOI: 10.1049/el:20051203
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The first stable operation (>100 h) of a AlGaN/GaN metal-oxide semiconductor heterostructure field effect transistor (MOSHFET) at very high RF power levels (∼20 W/mm at 2 GHz and 55 V drain bias) is reported. These record values are attributed to a current collapse-free performance resulting from using a field-plate over a leaky dielectric, and to the low forward gate currents owing to the MOS-design.
94 GHz high power performances of InAs0.4P0.6 channel HEMTs on InP
Electrochemical fabrication of well-ordered titania nanotubes in H3PO4/HF electrolytes
Extraction of source and drain resistances in MOSFETs using parasitic bipolar junction transistor
Stable 20 W/mm AlGaN-GaN MOSHFET
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- Author(s): P.C. Gunaratne and K.J. Christensen
- Source: Electronics Letters, Volume 41, Issue 13, p. 775 –777
- DOI: 10.1049/el:20051149
- Type: Article
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Energy consumption can be reduced by powering down components within a router, switch, or other network device during inter-packet idle periods. A predictive power management method based on exponential smoothing and detection of very long idle periods is developed. Long idle periods are detected using quantile estimation. The method improves upon that of Hwang and Wu.
Predictive power management method for network devices
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