Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 4, Issue 25, 13 December 1968
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Volume 4, Issue 25
13 December 1968
Improved travelling-wave ZnS light modulator
- Author(s): D.C. Doughty
- Source: Electronics Letters, Volume 4, Issue 25, p. 551 –552
- DOI: 10.1049/el:19680428
- Type: Article
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–552
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The efficiency of a travelling-wave light modulator has been improved, following an analysis which takes account of electric fringing fields at the edges of the microwave stripline. The predicted modulator bandwidth extends from 40MHz to 15GHz.
Voltage divisions between nonlinear resistances with positive temperature coefficients
- Author(s): J.O. Löberg and E.C. Salthouse
- Source: Electronics Letters, Volume 4, Issue 25, page: 552 –552
- DOI: 10.1049/el:19680429
- Type: Article
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The voltage distribution across nominally identical positive-temperature-coefficient thermistors connected in series is distinctly nonuniform. For a nonlinear resistance with this voltage/current characteristic, such a distribution corresponds to stable operation.
Edge injection and pinch-in effect of transistors with cylindrical geometry
- Author(s): H.-M. Rein
- Source: Electronics Letters, Volume 4, Issue 25, p. 553 –554
- DOI: 10.1049/el:19680430
- Type: Article
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Simple analytical expressions are derived for the variation of the emitter current density along the emitter junction of a transistor with cylindrical geometry due to the flow of the base current parallel to the emitter junction. Depending on the sign of the base current, the emitter injects predominantly either on the edge or in the centre of the junction.
1/f voltage noise in silicon planar bipolar transistors
- Author(s): K.F. Knott
- Source: Electronics Letters, Volume 4, Issue 25, p. 555 –556
- DOI: 10.1049/el:19680431
- Type: Article
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Measurements on silicon planar transistors in the frequency range 1 Hz–1 kHz have shown conclusively that 1/f noise is present on the equivalent input noise-voltage generator. In some samples of transistors, correlation between the 1/f components of voltage and current noise was detected. In one sample, an estimate of the correlation coefficient was made, the result being a coefficient of approximately −0.1.
Logical operations by interferometric techniques
- Author(s): E. Gatti ; M. Phadnis ; A. Sona
- Source: Electronics Letters, Volume 4, Issue 25, p. 556 –557
- DOI: 10.1049/el:19680432
- Type: Article
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–557
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A set of basic switching elements for performing logical operations on optical signals is considered. The devices are based on interferometric techniques associated with changes in optical paths introduced by electro-optical cells. It is shown that the most general switching function can be implemented without making recourse to any intermediate optical-to-electrical signal conversion.
Coaxial-slot surface-wave launcher
- Author(s): J.C. Beal and W.J. Dewar
- Source: Electronics Letters, Volume 4, Issue 25, p. 557 –559
- DOI: 10.1049/el:19680433
- Type: Article
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–559
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The use of an array of circumferential slots in the outer conductor of a dielectric-clad coaxial cable as a new way to launch a TM0 surface wave on a Goubau line is described. Its advantage over a conical horn lies in its efficiency depending only on its length, which makes it particularly suitable for use in a high-speed ground transportation system.
Diffusion capacitance of p–n junctions and transistors
- Author(s): C.D. Bulucea
- Source: Electronics Letters, Volume 4, Issue 25, p. 559 –561
- DOI: 10.1049/el:19680434
- Type: Article
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The error associated with the quasi-steady-state (q.s.s.) calculation of the diffusion capacitance of an ideal semiconductor diode, already pointed out in the literature, is interpreted in terms of a transmission-line representation of the device. The analysis is extended for short-base diodes and transistors. It is pointed out that, for diodes and transistors, the q.s.s. approach introduces a systematic error by neglecting the distributed nature of these devices.
Input admittance of an insulated antenna in a plasma medium
- Author(s): D.T. Nguyen
- Source: Electronics Letters, Volume 4, Issue 25, p. 561 –563
- DOI: 10.1049/el:19680435
- Type: Article
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The input admittance of an insulated cylindrical antenna immersed in a cold isotropic lossfree plasma medium is calculated using the Wiener-Hopf technique. It is found that the admittance can generally be separated into two parts: (i) that due to the radiation component of the current wave with a wave constant ke equal to that in the plasma medium and (ii) that due to the transmission component of the surface wave with a wave constant αş, which is the root of the dispersion equation of the insulation medium. Unless the electron concentration of the plasma is very low, the admittance is contributed mainly by the surface wave.
Orthogonal polynomial approach for the marcum Qfunction numerical computation
- Author(s): M. Pent
- Source: Electronics Letters, Volume 4, Issue 25, p. 563 –564
- DOI: 10.1049/el:19680436
- Type: Article
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A procedure is suggested to compute the Marcum Qfunction by means of Laguerre polynomials; a recursive formula is given, and the results of some tests of convergence are also indicated.
High-efficiency microwave oscillations from Si avalanche diodes
- Author(s): M.I. Grace and G. Gibbons
- Source: Electronics Letters, Volume 4, Issue 25, p. 564 –565
- DOI: 10.1049/el:19680437
- Type: Article
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High-efficiency microwave oscillations have been observed in Si p–n and p–n–n+ diodes under pulsed conditions. At about 25 mA reverse-bias current, a sudden decrease in voltage across the diode and an increase in bias current are observed, giving peak output power of 10–20 W and efficiency up to 30% between 1 and 3 GHz.
Comments on Wiener's model of certain nonlinear systems
- Author(s): N.B. Jones
- Source: Electronics Letters, Volume 4, Issue 25, p. 565 –566
- DOI: 10.1049/el:19680438
- Type: Article
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565
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The letter presents the Wiener expansion of the output of certain nonlinear systems in a new way. This is used to condense the restrictions on the input and the form of the model to two simple relationships, and also to show that certain accepted difficulties of Wiener's method can be overcome.
Efficient broadband excitation of the n = 0 surface magnetostatic waves in a y.i.g. slab
- Author(s): P. Young
- Source: Electronics Letters, Volume 4, Issue 25, p. 566 –568
- DOI: 10.1049/el:19680439
- Type: Article
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This letter describes an efficient method for exciting the lowest-order surface magnetostatic wave in a transversely magnetised single-crystal y.i.g. slab. The total coupling loss from an electromagnetic wave to a surface magnetostatic wave and back into an electromagnetic wave is measured to be less than 2.5dB, from 3.2 to 3.8GHz. The propagation characteristic of the surface magnetosatic wave is also discussed.
Negative-resistance amplifiers using three-terminal Gunn devices
- Author(s): F.P. Califano
- Source: Electronics Letters, Volume 4, Issue 25, p. 568 –569
- DOI: 10.1049/el:19680440
- Type: Article
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Negative-resistance amplifiers have been realised using three-terminal Gunn devices. Both transmission and reflection amplifiers were made, with the central frequency in the range 100–540 MHz for the transmission type and in the range 390–425 MHz for the reflection type. The maximum gain obtained reached about 53dB with a noise figure of about 20dB for a transmission-type amplifier operated at 140 MHz.
Evanescent-mode resonator of pure te mode
- Author(s): J.J. Hupert and J. Vigil
- Source: Electronics Letters, Volume 4, Issue 25, p. 569 –570
- DOI: 10.1049/el:19680441
- Type: Article
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An example of an evanescent-mode resonator, suitable for forming elements of filters, is shown operating in a pure TE mode. The object of this letter is to show that such a resonator is possible without introducing any lumped discontinuities in the guide which would introduce local generation of spurious modes.
Electric conduction in float-zone silicon after prolonged gamma irradiation
- Author(s): K.C. Kao and N. Pal
- Source: Electronics Letters, Volume 4, Issue 25, p. 571 –572
- DOI: 10.1049/el:19680442
- Type: Article
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The electric conductivities of float-zone silicon doped with arsenic for ntype and with boron for ptype have been measured before and after gamma irradiation using a four-point probe. Some new phenomena after prolonged irradiation are reported, and a brief discussion is given.
Electromagnetic wave propagation in spherically stratified isotropic media
- Author(s): B.S. Westcott
- Source: Electronics Letters, Volume 4, Issue 25, p. 572 –573
- DOI: 10.1049/el:19680443
- Type: Article
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The general electromagnetic field can be resolved into two components represented by electric and magnetic Hertz vectors, both vectors being parallel to the radial direction. Very few exact solutions for the radial variation of fields of the electric type have been found hitherto. Generalised refractive-index profiles permitting exact transcendental solutions are presented.
Erratum: Fourier, Laplace and Hilbert transforms
- Author(s): C.C. Kak
- Source: Electronics Letters, Volume 4, Issue 25, page: 574 –574
- DOI: 10.1049/el:19680444
- Type: Article
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Erratum: Stability properties of some gyrator circuits
- Author(s): A. Antonious
- Source: Electronics Letters, Volume 4, Issue 25, page: 574 –574
- DOI: 10.1049/el:19680445
- Type: Article
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Erratum: Iterative procedure for generating trees and directed trees
- Author(s): Wai-Kai Chen
- Source: Electronics Letters, Volume 4, Issue 25, page: 574 –574
- DOI: 10.1049/el:19680446
- Type: Article
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Erratum: Electromagnetic wave propagation in cylindrically stratified isotropic media
- Author(s): B.S. Westcott
- Source: Electronics Letters, Volume 4, Issue 25, page: 574 –574
- DOI: 10.1049/el:19680447
- Type: Article
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Erratum: Symmetrical and asymmetrical stable modes in systems for electronic stator control of asynchronous machines by semiconductor switches
- Author(s): J.D. van Wyk
- Source: Electronics Letters, Volume 4, Issue 25, page: 574 –574
- DOI: 10.1049/el:19680448
- Type: Article
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