Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 4, Issue 21, 18 October 1968
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Volume 4, Issue 21
18 October 1968
Exact solution for the diffusion of a charged particle in a time-varying electromagnetic field
- Author(s): F.C. Chang ; N.F. Audeh ; S.T. Wu
- Source: Electronics Letters, Volume 4, Issue 21, p. 441 –442
- DOI: 10.1049/el:19680347
- Type: Article
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An exact solution for a charged particle which diffuses in a time-varying electromagnetic field has been determined by writing the equation of the charged particle in a matrix form and diagonalising the magnetic-field vector. Thus the components of the equation of motion are decoupled. A simple example is presented to show the significance of the results.
High-power radio-frequency transistor amplifer
- Author(s): P. Rohan ; M. Viola ; E. Templar ; J. Wilcox
- Source: Electronics Letters, Volume 4, Issue 21, p. 442 –444
- DOI: 10.1049/el:19680348
- Type: Article
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The development of a high-power radio-frequency transistor amplifier, which uses transistors working in parallel into a common load, is described. Protection is afforded for each of the transistors in the event of failure of any one, and protection of all transistors in the final stage is achieved for mismatches between zero and infinity. Performance figures are given.
Computer calculations of the efficiency of the Gunn generator
- Author(s): D.P. Dizhur ; M.E. Levinstein ; M.S. Shur
- Source: Electronics Letters, Volume 4, Issue 21, p. 444 –446
- DOI: 10.1049/el:19680349
- Type: Article
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The dependences of the efficiency of the Gunn generator on the diode and régime parameters are investigated with the help of the computer model of the Gunn diode. The dependences of the efficiency on the parameters of the diode and the frequency dependences of the efficiency are given.
Modular approach to higher-power avalanche-diode oscillators
- Author(s): F. Ivanek and V.G.K. Reddi
- Source: Electronics Letters, Volume 4, Issue 21, p. 446 –447
- DOI: 10.1049/el:19680350
- Type: Article
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Three Xband avalanche-diode iris mounts of identical design were cascaded to form a composite oscillator structure. It has been experimentally established that highly efficient power addition can be obtained with this scheme. Matching the individual diode characteristics and spacing between the diodes are not too critical.
Numerical study of avalanche multiplication in silicon p–n abrupt junctions
- Author(s): J. Urgell
- Source: Electronics Letters, Volume 4, Issue 21, p. 447 –450
- DOI: 10.1049/el:19680351
- Type: Article
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The behaviour of two abrupt junctions p+–n and n+–p in the avalanche-breakdown mode for specific boundary conditions is investigated by the author. An empirical relation between the breakdown voltages of two complementary units is then developed. Numerical data for the Miller's exponent ‘n’ and analytical expressions previously given by the author are compared.
Negative resistance in acoustically amplifying CdS with an S type current/voltage characteristic
- Author(s): J.D. Maines and E.G.S. Paige
- Source: Electronics Letters, Volume 4, Issue 21, p. 450 –451
- DOI: 10.1049/el:19680352
- Type: Article
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Under constant current conditions, an Stype current/voltage characteristic has been observed for thin platelets of photoconducting CdS at room temperature. Evidence is presented which shows that the nonohmic behaviour is associated with excitation of vibrational modes of the platelet. The origin of the negative differential resistance is discussed using a simple model.
Wide-range electronic tuning of a Gunn diode by an yttrium-iron garnet (y.i.g.) ferrimagnetic resonator
- Author(s): D.A. James
- Source: Electronics Letters, Volume 4, Issue 21, p. 451 –452
- DOI: 10.1049/el:19680353
- Type: Article
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A Gunn diode was mounted in a coaxial line circuit and tuned by a y.i.g. spherical single-crystal resonator. The oscillator could be tuned over the range 5.8–10.8 GHz and, over nearly all of this range, the frequency varied linearly with magnet-coil current. Although successful tuning has been achieved, many aspects of design remain to be studied.
New class of magnitude/frequency convertors
- Author(s): F. Bombi and D. Ciscato
- Source: Electronics Letters, Volume 4, Issue 21, page: 453 –453
- DOI: 10.1049/el:19680354
- Type: Article
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A class of closed-loop digital transducers is presented in which the output signal is a frequency-modulated train of pulses. These convertors exhibit a linear and stable input-output relation and improved dynamic performance. Temperature root-mean-square power/frequency convertors can be directly implemented according to the presented scheme.
Symmetrical and asymmetrical stable modes in systems for electronic stator control of asynchronous machines by semiconductor switches
- Author(s): J.D. Van Wyk
- Source: Electronics Letters, Volume 4, Issue 21, p. 453 –455
- DOI: 10.1049/el:19680355
- Type: Article
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In control systems utilising electronic stator voltage control of induction machines by variation of conduction-angle delay, the flow of currents containing a d.c. component may cause instability. Asymmetric current flow is therefore undesirable, and, under these conditions, the requirements for the triggering command are examined and a solution is proposed.
Determination of the ambipolar diffusion coefficient of mercury-vapour plasma in the late-afterglow region
- Author(s): A.G. Heaton and D.K. Pal
- Source: Electronics Letters, Volume 4, Issue 21, p. 455 –456
- DOI: 10.1049/el:19680356
- Type: Article
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Microwave measurements of electron density in the afterglow of a transient mercury-vapour plasma discharge, by the oblique-incidence method, indicate distinct responses prior to the main response. Such responses appear shortly before the central part of the column becomes transparent to the microwave probing signal and correspond to multiple reflections at the plasma boundary. The time constant of electron decay is deduced from the responses which appear at definite times, and it is shown that the principal electron-removal process is ambipolar diffusion from calculations based on an assumed electron-density profile. Extrapolation back to the time corresponding to peak current indicates an extremely high degree of ionisation.
Generation of trees by algebraic methods
- Author(s): Wai-Kai Chen
- Source: Electronics Letters, Volume 4, Issue 21, p. 456 –457
- DOI: 10.1049/el:19680357
- Type: Article
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It is shown that the technique of generating trees by the method of partial differentiations is actually a variant of the Wang algebra technique.
Distributed RC elements with rational short-circuit matrices
- Author(s): S. Řízek
- Source: Electronics Letters, Volume 4, Issue 21, p. 458 –459
- DOI: 10.1049/el:19680358
- Type: Article
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Short-circuit matrices are presented for configurations of RC elements which give rational short-circuit parameters.
Theoretical efficiency of the l.s.a. mode for gallium arsenide at frequencies above 10GHz
- Author(s): P.N. Butcher and C.J. Hearn
- Source: Electronics Letters, Volume 4, Issue 21, p. 459 –461
- DOI: 10.1049/el:19680359
- Type: Article
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The efficiency of the l.s.a. mode is calculated for galliumarsenide diodes taking account of all the electron-lattice relaxation processes. The efficiency falls off with increasing frequency and typically becomes negative above 100GHz.
Numerical inversion of the Laplace transform using Laguerre polynomials
- Author(s): R. Genin and L.C. Calvez
- Source: Electronics Letters, Volume 4, Issue 21, p. 461 –462
- DOI: 10.1049/el:19680360
- Type: Article
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A method is given for the evaluation of the coefficients in the expansion in terms of Laguerre polynomials of a function f(t) whose Laplace transform is a rational fraction F(p).
Space-charge-limited insulated-gate surface-channel transistor (s.c.l. i.g.f.e.t.)
- Author(s): G.T. Wright
- Source: Electronics Letters, Volume 4, Issue 21, p. 462 –464
- DOI: 10.1049/el:19680361
- Type: Article
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Preliminary experimental results are reported on insulated-gate field-effect transistors made in high-resistivity (near-intrinsic silicon substrates. Operation occurs under space-charge-limited conditions, and maximum transconductance and minimum parasitic capacitances for this kind of device are thus obtained. Some implications for integrated monolithic microelectronics are discussed.
Maximum-speed s.t.t. state assignments for sequential machines
- Author(s): D.P. Burton and D.R. Noaks
- Source: Electronics Letters, Volume 4, Issue 21, p. 464 –465
- DOI: 10.1049/el:19680362
- Type: Article
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A systematic procedure for deriving single-transition-time (s.t.t.) state assignments yielding maximum-speed as chronous machines is described. The delay between applying an input and achieving a stable state is two gate delays for all cases.
Consequences of using the bispherical electrode system for dielectric testing
- Author(s): J.E. Brignell
- Source: Electronics Letters, Volume 4, Issue 21, p. 465 –467
- DOI: 10.1049/el:19680363
- Type: Article
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A method is given for predicting the consequences of using a a bispherical electrode system for conduction and breakdown measurements on dielectrics. Use is made of a special function, which may be defined as the exponential of gradient averaged over a bipolar equipotential surface. As an illustration, the method is applied to measurements by House on the liquid dielectric n hexane, and it is shown that, given two points, the entire gap and stress dependence can be predicted.
Matrix method to determine shift-register connections for delayed pseudorandom binary sequences
- Author(s): B. Ireland and J.E. Marshall
- Source: Electronics Letters, Volume 4, Issue 21, p. 467 –468
- DOI: 10.1049/el:19680364
- Type: Article
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In a previous letter, a matrix φ0 was introduced, and an algorithm was derived for its inversion. The inverse matrix is shown in this letter to be simply related to the characteristic polynomial of the shift-register circuit. Those shift-register configurations which are most amenable to the matrix method for generating delayed sequences are discussed.
Trapping levels in silicon nitride
- Author(s): E.J.M. Kendall
- Source: Electronics Letters, Volume 4, Issue 21, p. 468 –469
- DOI: 10.1049/el:19680365
- Type: Article
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The trapping levels in silicon nitride have been investigated using the thermally stimulated current technique. Traps at between 0.50 and 0.90eV below the conduction band of the nitride were found, as well as a distribution of traps at and near the silicon-silicon nitride interface about 0.10eV below the conduction band of the silicon.
Electrical design requirements for low-loss high-frequency coaxial cables
- Author(s): H.M. Barlow
- Source: Electronics Letters, Volume 4, Issue 21, p. 469 –470
- DOI: 10.1049/el:19680366
- Type: Article
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Arrangements for electric loading of the inner conductor of a coaxial cable as a means of reducing attenuation have been shown experimentally to be effective at 3GHz. It is now proposed to extend the technique to submarine telephone cables working at a few megahertz, and electrical design criteria are given.
Erratum: Plasma-density determination from the phase shift in scattered radiation
- Author(s): A.R. Jones ; B.V. Stanic ; E.R. Wooding
- Source: Electronics Letters, Volume 4, Issue 21, page: 470 –470
- DOI: 10.1049/el:19680367
- Type: Article
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Erratum: Reliability parameters of equipment with a general repair-time distribution
- Author(s): F. Hoff
- Source: Electronics Letters, Volume 4, Issue 21, page: 470 –470
- DOI: 10.1049/el:19680368
- Type: Article
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