Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 4, Issue 13, 28 June 1968
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Volume 4, Issue 13
28 June 1968
Measurement of donor density by pulsing Schottky-barrier diodes
- Author(s): J.E. Carroll
- Source: Electronics Letters, Volume 4, Issue 13, p. 259 –260
- DOI: 10.1049/el:19680198
- Type: Article
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p.
259
–260
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On applying a voltage pulse, which varies as the square of the time, to a Schottky-barrier diode the current flowing to store the charge is shown to have a close relation to the donor density. This gives an immediate and rapid assessment of the donor density with depth in a semiconductor.
Calculation of transient response
- Author(s): J. Valand
- Source: Electronics Letters, Volume 4, Issue 13, page: 261 –261
- DOI: 10.1049/el:19680199
- Type: Article
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p.
261
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Given the rational algebraic function X(s) = an−1Sn−1+an−2Sn−2+…+a1s+a0/sn+bn−1sn−1+…+b1s+b0 it is shown that the corresponding time function is expressed simply by the linear combination x(t) = an−1qn−1(t)+an−2qn−2(t) +… +a1q1(t) + a0q0(t) where functions qt(t) are the last column elements of the transition matrix M(t) = exp (At).
High-speed iterative multiplier
- Author(s): D.P. Burton and D.R. Noaks
- Source: Electronics Letters, Volume 4, Issue 13, page: 262 –262
- DOI: 10.1049/el:19680200
- Type: Article
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p.
262
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An iterative array is proposed which reduces the multiplication of two binary numbers to one pass through the array and a summation of the outputs produced.
Eigenfunctions and the solution of sensitivity equations
- Author(s): D.C. Reddy
- Source: Electronics Letters, Volume 4, Issue 13, p. 262 –263
- DOI: 10.1049/el:19680201
- Type: Article
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–263
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An elegant expression for the evaluation of the sensitivity of response of a linear time-invariant multivariable system is obtained. It is of interest that the expression does not involve any of the sensitivity coefficients of the eigenfunctions.
General analysis of time-variable delay devices
- Author(s): R.A. Johnson
- Source: Electronics Letters, Volume 4, Issue 13, p. 263 –264
- DOI: 10.1049/el:19680202
- Type: Article
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p.
263
–264
(2)
A general analysis is given of delay devices in which the output is the input delayed by τ(t), a prescribed function of time produced by the motion of the input point, the medium and the output point. The results establish a coherent approach to some problems involved in the simulation of variable delay in general.
Parametric resonance in an oscillating circuit utilising nonlinear capacitance
- Author(s): A.Y. Spasov
- Source: Electronics Letters, Volume 4, Issue 13, p. 264 –265
- DOI: 10.1049/el:19680203
- Type: Article
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p.
264
–265
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The letter deals with parametric resonance in an oscillating circuit with nonlinear capacitance. Using the method in Reference 3, one can comparatively simply obtain the amplitude/frequency characteristic of the parametric resonance, the dependence of the minimal amplitude needed for excitation of the circuit on the distuning and the phase characteristic of the parametric oscillator.
Two-point boundary-value problems in theories of space-charge conduction
- Author(s): G.G. Roberts and L.M. Marks
- Source: Electronics Letters, Volume 4, Issue 13, p. 265 –267
- DOI: 10.1049/el:19680204
- Type: Article
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–267
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A computational technique is described which overcomes numerical difficulties reported previously in the literature in the solution of time-independent space-charge conduction problems that involve three dependent variables. By way of illustration, results are presented for a model describing electron injection into a ptype semiconductor.
Measurement of waveguide attenuation by resonance methods
- Author(s): T.R. Bourk ; M.M.Z. Kharadly ; J.E. Lewis
- Source: Electronics Letters, Volume 4, Issue 13, p. 267 –268
- DOI: 10.1049/el:19680205
- Type: Article
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p.
267
–268
(2)
It is shown that attenuation coefficients obtained from Qfactor measurements on resonant waveguides containing more than one homogeneous dielectric medium would be subject to significant error if certain forms of the expression relating the Qfactor to the attenuation coefficient were applied. In particular, results for the Goubau surface-wave transmission line are examined.
Equivalent gain of an instantaneous quantiser with two independent random inputs
- Author(s): L. Giacomelli and M. Dècina
- Source: Electronics Letters, Volume 4, Issue 13, p. 269 –270
- DOI: 10.1049/el:19680206
- Type: Article
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p.
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–270
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An extension of Booton's criterion for the definition of the equivalent gain of an instantaneous nonlinear device is found in the case of two statistically independent random inputs. The resulting formulas have been used for calculating interchannel crosstalk and idle channel noise in a noisy quantiser for p.c.m. telephone systems.
Circuit-controlled modes of acoustoelectric oscillations in piezoelectric semiconductors
- Author(s): C.W. Turner and D.R. Bryson
- Source: Electronics Letters, Volume 4, Issue 13, p. 270 –271
- DOI: 10.1049/el:19680207
- Type: Article
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–271
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Results are presented for experiments in which circuit-controlled modes of acoustoelectric current oscillations were obtained in piezoelectric semiconductors. The reactive circuits used allowed a 6:1 tuning range from a single specimen. The possible realisation of bulk device r.f. generators giving large peak powers in the region of 1 MHz is discussed.
Cooled broadband parametric amplifier at 4 GHz
- Author(s): C. Field and M.C. McNeill
- Source: Electronics Letters, Volume 4, Issue 13, p. 271 –272
- DOI: 10.1049/el:19680208
- Type: Article
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p.
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–272
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A low-noise parametric amplifier, giving 10dB gain from 3.7 to 4.2GHz, is described. The amplifier is cooled to about 20°K using a closed-cycle refrigerator.
Real-frequency interpolation with positive-real n ports
- Author(s): M. Wohlers
- Source: Electronics Letters, Volume 4, Issue 13, p. 272 –273
- DOI: 10.1049/el:19680209
- Type: Article
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p.
272
–273
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A procedure is described for generating passive lumped nports that interpolate to prescribed n×n ‘passive’ matrices at designated points on the real-frequency jω axis. In those cases where the given matrices are ‘lossless’, the resulting n ports can be constructed with no more than 2qn reactive elements (q is the number of frequencies), whereas, in the general case, 4qn elements are used.
Minimal number of nullors for realising active gyrators
- Author(s): G. Martinelli and P.G. di Porto
- Source: Electronics Letters, Volume 4, Issue 13, p. 273 –274
- DOI: 10.1049/el:19680210
- Type: Article
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–274
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The existence of a lower bound on the number of nullors necessary for realising gyrators is investigated. It is shown that two nullors are necessary and sufficient for realising an active gyrator, both in the grounded and ungrounded case.
Determination of the constants of the capacitance/voltage law of a varactor diode
- Author(s): R.B. Smith ; B. Bramer ; D.G. Croft
- Source: Electronics Letters, Volume 4, Issue 13, p. 274 –275
- DOI: 10.1049/el:19680211
- Type: Article
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p.
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–275
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A graphical method is proposed for finding the constants, including the stray capacitance, of the capacitance/voltage relationship of a varactor diode.
Simplified topological solutions of networks containing nullators and norators
- Author(s): G.S. Brayshaw
- Source: Electronics Letters, Volume 4, Issue 13, page: 276 –276
- DOI: 10.1049/el:19680212
- Type: Article
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p.
276
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Davies' topological rules employing nullators and norators for analysing active networks involve double graphs, and it is the object of this letter to show how his method can be simplified by employing single graphs to determine the constituent terms of the network determinant.
Voltage gain in passive RC series-parallel 3-terminal networks
- Author(s): R. Nouta and K.M. Adams
- Source: Electronics Letters, Volume 4, Issue 13, p. 276 –278
- DOI: 10.1049/el:19680213
- Type: Article
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p.
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–278
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The possibilities, given by Fialkow and Gerst, of obtaining voltage gain are studied for transfer functions of order 2, 3 and 4. The number of elements of each network is shown to be minimal when the realisation is restricted to the series-parallel configuration. Two of the networks are minimal without this restriction. Some experimental results are also given.
Maximum available power gain of active 2-ports
- Author(s): S. Venkateswaran and P.S. Sarma
- Source: Electronics Letters, Volume 4, Issue 13, p. 278 –279
- DOI: 10.1049/el:19680214
- Type: Article
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p.
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–279
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Without evaluating the port terminations, it is shown that the maximum power gain of an absolutely stable active 2-port is realisable with conjugate-matching source and load immittances. Expressions for these optimum terminations and associated gain are obtained from a simple application of the well known image-parameter theory.
1/f noise in gate-controlled planar silicon diodes
- Author(s): F. Leuenberger
- Source: Electronics Letters, Volume 4, Issue 13, page: 280 –280
- DOI: 10.1049/el:19680215
- Type: Article
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p.
280
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Low-frequency excess noise in planar bipolar silicon devices was investigated by means of gate-controlled n+−p diodes. Within the range of parameter values covered in this investigation, it was found that the noise-power maxima invariably occur at gate bias voltages leading to depletion of majority carriers at the surface of the high-resistivity side of the p–n junction.
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