Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 39, Issue 20, 2 October 2003
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Volume 39, Issue 20
2 October 2003
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- Author(s): T. Ytterdal
- Source: Electronics Letters, Volume 39, Issue 20, p. 1427 –1428
- DOI: 10.1049/el:20030937
- Type: Article
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A CMOS bandgap voltage reference (BVR) circuit is proposed that operates at power supply voltages down to 0.6 V. The BVR is designed in a commercially available 0.13 µm digital CMOS technology. No analogue process options are required.
CMOS bandgap voltage reference circuit for supply voltages down to 0.6 V
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- Author(s): Sang-Gyu Kim and Kai Chang
- Source: Electronics Letters, Volume 39, Issue 20, p. 1428 –1429
- DOI: 10.1049/el:20030963
- Type: Article
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A new technique for realising a simple low-cost monopulse antenna using a symmetrical bi-directionally-fed microstrip patch array is described. The antenna is designed and demonstrated at Ka-band. Two squinted beams are radiated from a bi-directionally fed microstrip patch array, and a sum/difference pattern is synthesised using the in-phase and out-of-phase signals achieved using a hybrid ring coupler. The measured return loss is better than 10 dB at the sum and difference port, and the null depth at broadside is more than 30 dB. - Author(s): E. De Witte ; H.D. Griffiths ; P.V. Brennan
- Source: Electronics Letters, Volume 39, Issue 20, p. 1430 –1431
- DOI: 10.1049/el:20030922
- Type: Article
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It is shown how the concept of phase mode excitation of circular antenna arrays may be extended to spherical arrays, and in particular that a spherical phase mode of the excitation function of a spherical array results in a far field radiation pattern with the same spherical phase mode form. A number of applications and issues concerned with the practical implementation are discussed.
Low-cost monopulse antenna using bi-directionally-fed microstrip patch array
Phase mode processing for spherical antenna arrays
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- Author(s): P. Dudek and V.D. Juncu
- Source: Electronics Letters, Volume 39, Issue 20, p. 1431 –1432
- DOI: 10.1049/el:20030881
- Type: Article
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A three-transistor CMOS circuit is presented, with adjustable nonlinear characteristics, which can be used as a map that generates discrete-time chaotic signals. A method of constructing a chaos generator using two map circuits is also proposed. The circuit is very compact, which makes it suitable for applications requiring the integration of a large number of random signal generators on a single VLSI chip.
Compact discrete-time chaos generator circuit
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- Author(s): Z. Gu and A. Thiede
- Source: Electronics Letters, Volume 39, Issue 20, p. 1433 –1434
- DOI: 10.1049/el:20030932
- Type: Article
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A pseudo-differential latch circuit is investigated. By removing the current source from the conventional source-coupled field-effect-transistor logic (SCFL) structure, the speed of the circuit can be improved. The pseudo-differential D-type flip-flop-based 2:1 static frequency divider, which can operate up to 18 GHz and consumes less than 4 mA from a 1.8 V supply, has been realised in 0.18 µm standard digital CMOS technology. - Author(s): K. Ishii ; H. Nosaka ; M. Ida ; K. Kurishima ; T. Shibata
- Source: Electronics Letters, Volume 39, Issue 20, p. 1434 –1436
- DOI: 10.1049/el:20030940
- Type: Article
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A new circuit configuration for an emitter-coupled logic (ECL) gate that can reduce propagation delay time has been demonstrated. Nineteen-stage ring oscillators were fabricated using InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with cutoff frequency fT and maximum oscillation frequency fmax of about 232 and 360 GHz, respectively, to evaluate the speed performance of the proposed ECL gate. The minimum propagation delay is 3.21 ps/gate. The proposed ECL gate is about 8% faster than the conventional ECL gate. - Author(s): Z. Khan ; A.T. Erdogan ; T. Arslan
- Source: Electronics Letters, Volume 39, Issue 20, p. 1436 –1437
- DOI: 10.1049/el:20030934
- Type: Article
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A new encoding scheme is introduced for low-power and crosstalk immune communication of generic data on long parallel on-chip buses. The scheme uses a limited weight codebook with one-to-one data-to-code mapping. The new scheme and its implementation using a generic system-on-chip platform are described and results are provided that indicate a 30% saving in total switching activity with an 8-bit communication example.
18 GHz low-power CMOS static frequency divider
3.21 ps ECL gate using InP/InGaAs DHBT technology
Dual low-power and crosstalk immune encoding scheme for on-chip data buses
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- Author(s): A. Dragomir ; D.N. Nikogosyan ; G. Brambilla
- Source: Electronics Letters, Volume 39, Issue 20, p. 1437 –1439
- DOI: 10.1049/el:20030942
- Type: Article
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An enhanced photosensitivity was observed in 30 mol% Ge-doped fibre and 30 mol% Ge-doped, 1 mol% Sn-codoped fibre when exposed to high-intensity (73–86 GW/cm2) femtosecond laser pulses at 264 nm.
Increased photosensitivity of Ge-doped and Ge, Sn-doped fibres under high-intensity 264 nm laser light
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- Author(s): C.J. Mitchell
- Source: Electronics Letters, Volume 39, Issue 20, p. 1439 –1440
- DOI: 10.1049/el:20030921
- Type: Article
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A new type of attack on message authentication codes (MACs) is introduced which takes advantage of possible weaknesses in interfaces to hardware security modules. In particular, if a module does not fix the degree of MAC truncation employed, then potentially serious attacks are possible.
Truncation attacks on MACs
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- Author(s): J. Altet ; M.A. Salhi ; S. Dilhaire ; A. Syal ; A. Ivanov
- Source: Electronics Letters, Volume 39, Issue 20, p. 1440 –1442
- DOI: 10.1049/el:20030907
- Type: Article
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The feasibility is shown of using the dynamic monitoring of the displacement of the uppermost metal layer due to thermal dilatations to locate devices that generate hot spots in a CMOS IC layout with five levels of metals and with metal fills.
Localisation of devices acting as heat sources in ICs covered entirely by metal layers
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- Author(s): J.-P. Ruske ; E.A. Werner ; B. Zeitner ; A. Tünnermann
- Source: Electronics Letters, Volume 39, Issue 20, p. 1442 –1443
- DOI: 10.1049/el:20030959
- Type: Article
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An integrated optical Mach-Zehnder modulator in lithium niobate was used for pulse picking of a 140 fs laser oscillator at 1064 nm with 76 MHz repetition rate. A maximum extinction ratio of about 1000:1 was demonstrated at a peak power of about 120 W.
Integrated optical ultrashort-pulse picker with high extinction ratio
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- Author(s): S. Fathpour ; P. Bhattacharya ; S. Pradhan ; S. Ghosh
- Source: Electronics Letters, Volume 39, Issue 20, p. 1443 –1445
- DOI: 10.1049/el:20030944
- Type: Article
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Measurements of ultra-low linewidth enhancement factor in ridge-waveguide tunnel injection In0.4Ga0.6As/GaAs self-assembled quantum dot lasers have been made and the results compared with similar quantum well lasers. Values of α∼3.8 were measured in the quantum well lasers, and α was ≤0.7 in the quantum dot lasers. The consequent suppression of filamentation in the quantum dot devices has also been observed. - Author(s): S.R. Bank ; M.A. Wistey ; H.B. Yuen ; L.L. Goddard ; W. Ha ; J.S. Harris
- Source: Electronics Letters, Volume 39, Issue 20, p. 1445 –1446
- DOI: 10.1049/el:20030928
- Type: Article
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Low-threshold room temperature continuous wave 1.49 µm GaInNAsSb lasers are presented. Room temperature threshold current density of 1.1 kA/cm2 was observed with a high external quantum efficiency of 40% and maximum output power of 30 mW from both facets. - Author(s): D. Evekull ; S. Johansson ; S. Bjurshagen ; M. Olson ; R. Koch ; F. Laurell
- Source: Electronics Letters, Volume 39, Issue 20, p. 1446 –1448
- DOI: 10.1049/el:20030924
- Type: Article
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A continuation of the previously introduced microstructured silicon carrier concept for diode-pumped solid-state lasers is presented, using novel heat-conducting polymers as a carrier. The most prominent features of the silicon carrier concept are maintained, adding to the mass production possibilities of the inexpensive polymers. The first experiments, using a continuous wave Nd:YAG microchip laser, have given an output power of 2 W at 1064 nm, showing the potential of this new approach.
Linewidth enhancement factor and near-field pattern in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers
Low-threshold CW GaInNAsSb/GaAs laser at 1.49 µm
Polymer encapsulated miniature Nd:YAG lasers
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- Author(s): P. Abele ; M. Zeuner ; I. Kallfass ; J. Müller ; H. Laban Hiwilepo ; T. Hackbarth ; D. Chrastina ; H. von Känel ; U. König ; H. Schumacher
- Source: Electronics Letters, Volume 39, Issue 20, p. 1448 –1449
- DOI: 10.1049/el:20030953
- Type: Article
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For the first time the fabrication of a distributed amplifier based on n-type Si/SiGe-MODFETs is presented. The realised amplifier consists of six identical stages and has a gain of 5.5 dB. The bandwidth of this amplifier is 32 GHz. The gain ripple up to this frequency is ±0.8 dB. The return losses at the input and output are better than 10 dB. Using a coplanar waveguide layout for the amplifier no via-holes and backside processing is needed. The MMIC has a size of 0.9×3.2 mm2. - Author(s): N. Berger ; K. Biller ; H.-O. Ruoß ; F.M. Landstorfer
- Source: Electronics Letters, Volume 39, Issue 20, p. 1449 –1451
- DOI: 10.1049/el:20030904
- Type: Article
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A coplanar waveguide fixture has been developed for the non-destructive determination of the complex permittivity of dielectric materials within a wide frequency range. - Author(s): Jia-Liang Chen ; Sheng-Fuh Chang ; Yng-Huey Jeng ; Chun-Yo Lin
- Source: Electronics Letters, Volume 39, Issue 20, p. 1451 –1453
- DOI: 10.1049/el:20030957
- Type: Article
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A new and successful wiggly technique is proposed for the design of broadband non-uniform line couplers, where the coupler is wiggled with rectangular teeth on the inner and outer edges of coupled conductors. Compared with other reported quadrature couplers, this design offers a fully planar structure without bond wires or dielectric overlaps. A fabricated 2–18 GHz microstrip coupler was measured and significant performance improvement is reported.
32 GHz MMIC distributed amplifier based on N-channel SiGe MODFETs
Broadband non-destructive determination of complex permittivity with coplanar waveguide fixture
Wiggly technique for broadband non-uniform line couplers
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- Author(s): M. Sandell
- Source: Electronics Letters, Volume 39, Issue 20, p. 1453 –1455
- DOI: 10.1049/el:20030955
- Type: Article
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Iterative decoding of space-time block codes (STBCs) and channel codes have shown to achieve very good performance. Using tools such as EXIT charts, the performance can be predicted and also used for design. However almost all work so far has concentrated on linear STBCs. Therefore nonlinear STBCs that are designed to work well with iterative decoding are investigated. It is shown that they can outperform linear STBCs since their characteristics are quite different when supplying a priori information from a channel decoder. Analysis, design rules and simulation results for the nonlinear codes are presented.
Nonlinear space-time block codes designed for iterative decoding
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- Author(s): B. Milivojevic ; D. Sandel ; S. Bhandare ; R. Noé ; F. Wüst
- Source: Electronics Letters, Volume 39, Issue 20, p. 1455 –1456
- DOI: 10.1049/el:20030933
- Type: Article
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A chromatic dispersion measurement scheme based on arrival time detection, an active interferometer phase stabilisation, and a standard clock-and-data recovery circuit are used in this 40 Gbit/s carrier-suppressed return-to-zero differential phase shift keying system. Chromatic dispersion measurement noise is 100 fs/nm. - Author(s): C. Kim ; I. Kim ; X. Li ; G. Li
- Source: Electronics Letters, Volume 39, Issue 20, p. 1456 –1458
- DOI: 10.1049/el:20030929
- Type: Article
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All-optical clock recovery from 40 Gbit/s non-return-to-zero (NRZ) data has been experimentally demonstrated by using a fibre-pigtailed Fabry–Perot filter and a self-pulsing two-section gain-coupled distributed feedback laser. The recovered clock has a measured root-mean-square (RMS) timing jitter of 1.2 ps. Error-free performance has been achieved in back-to-back bit error ratio (BER) tests using the optically recovered clock. - Author(s): S. Ferber ; R. Ludwig ; C. Boerner ; A. Wietfeld ; B. Schmauss ; J. Berger ; C. Schubert ; G. Unterboersch ; H.G. Weber
- Source: Electronics Letters, Volume 39, Issue 20, p. 1458 –1459
- DOI: 10.1049/el:20030935
- Type: Article
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Single-polarisation 160 Gbit/s OTDM transmission over 3×80 km dispersion-managed SLA fibre using DPSK and OOK modulation is reported. The influence of the fibre input power is experimentally and theoretically investigated. A significant advantage for DPSK is revealed. - Author(s): Xing Wei ; A.H. Gnauck ; Xiang Liu ; J. Leuthold
- Source: Electronics Letters, Volume 39, Issue 20, p. 1459 –1461
- DOI: 10.1049/el:20030898
- Type: Article
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Comparison is made of 42.7 Gbit/s return-to-zero alternate mark inversion and return-to-zero on-off keying formats in a recirculating loop transmission experiment over 24×80 km standard singlemode fibre spans. It is found that RZ-AMI is more tolerant to fibre nonlinearity, in good agreement with theoretical and numerical predictions. - Author(s): D. Pastor ; A. Martinez ; J. Capmany ; P. Muñoz ; S. Sales ; B. Ortega
- Source: Electronics Letters, Volume 39, Issue 20, p. 1461 –1462
- DOI: 10.1049/el:20030931
- Type: Article
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A practically independent intensity modulation arrangement is demonstrated based on two standard LiNbO3 electro-optical modulators (EOM) in a serial polarisation diversity (SPD) structure. Polarisation reduction from the typical values over 30–50 dB to levels <0.5 dB has been achieved. This technique has a potential application in header rewriting in subcarrier multiplexed label swapping networks. - Author(s): P.G. Goetz ; E.E. Funk ; R. Mahon ; W.S. Rabinovich ; S.C. Binari
- Source: Electronics Letters, Volume 39, Issue 20, p. 1463 –1464
- DOI: 10.1049/el:20030962
- Type: Article
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It has been shown that the data throughput of an optical modulating retroreflector (MRR) system can be enhanced by use of spectrally efficient M-ary quadrature amplitude modulation (M-ary QAM). It has been demonstrated that this MRR system has sufficient dynamic range to support up to 64-QAM at 30 Mbit/s in a 6.75 MHz channel bandwidth.
40 Gbit/s CSRZ-DPSK transmission system with signed online chromatic dispersion detection
All-optical clock recovery of NRZ data at 40 Gbit/s using Fabry–Perot filter and two-section gain-coupled DFB laser
Comparison of DPSK and OOK modulation format in 160 Gbit/s transmission system
Nonlinearity tolerance of RZ-AMI format in 42.7 Gbit/s long-haul transmission over standard SMF spans
Polarisation independent intensity modulation setup based on serial polarisation diversity arrangement for header rewriting in label swapping networks
Quadrature amplitude modulation in modulating retroreflector system
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- Author(s): K. Tsuzuki ; T. Ishibashi ; T. Ito ; S. Oku ; Y. Shibata ; R. Iga ; Y. Kondo ; Y. Tohmori
- Source: Electronics Letters, Volume 39, Issue 20, p. 1464 –1466
- DOI: 10.1049/el:20030939
- Type: Article
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Using an n–i–n heterostructure, a travelling-wave Mach–Zehnder modulator on an InP substrate has been developed. An extremely small π voltage (Vπ) of 2.2 V has been obtained, even for a short signal-electrode length of 3 mm. Wavelength-insensitive extinction characteristics and 40 Gbit/s operation are described. - Author(s): X. Li ; S. Demiguel ; N. Li ; J.C. Campbell ; D.L. Tulchinsky ; K.J. Williams
- Source: Electronics Letters, Volume 39, Issue 20, p. 1466 –1467
- DOI: 10.1049/el:20030927
- Type: Article
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A high-saturation-current, backside-illuminated In0.53Ga0.47As photodiode with a partially depleted absorber has been fabricated and tested. The 1 dB small-signal compression current was 199 mA at 1 GHz for a 100 µm diameter photodiode. The 1 dB large-signal compression current was 24 mA at 48 GHz for an 8 µm-diameter photodiode. The responsivity was 0.6 A/ W at 1.55 µm.
40 Gbit/s n–i–n InP Mach–Zehnder modulator with a π voltage of 2.2 V
Backside illuminated high saturation current partially depleted absorber photodetecters
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- Author(s): K. Hirachi ; K. Kajiyama ; S. Isokane ; M. Nakaoka
- Source: Electronics Letters, Volume 39, Issue 20, p. 1467 –1469
- DOI: 10.1049/el:20030948
- Type: Article
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Small-scale energy storage systems incorporating a battery bank have attracted special interest for load-levelling systems. Because the battery bank voltage in such systems is actually low, it is important to consider the bidirectional chopper suitable for large step-up and step-down ratios. A novel circuit topology for a bidirectional chopper acceptable for small-scale load levelling systems is presented and evaluated on the basis of analytical and experimental results.
Coupled inductor assisted bidirectional chopper for small-scale battery energy storage system
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- Author(s): Bongsue Suh
- Source: Electronics Letters, Volume 39, Issue 20, p. 1469 –1471
- DOI: 10.1049/el:20030949
- Type: Article
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The addition of local location agents at radio access networks for future cellular systems to enhance location management and paging functions is proposed. Their feasibility, based on current specifications, is shown and their performance evaluated. The numerical results show that the proposed strategy significantly reduces the mobility management cost compared with the current strategy. - Author(s): R. Vidal ; J. Paradells ; J. Casademont
- Source: Electronics Letters, Volume 39, Issue 20, p. 1471 –1472
- DOI: 10.1049/el:20030943
- Type: Article
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A procedure for labelling cell identifiers is presented. Using this procedure a mobile node is able to calculate the distance between two cell positions, which allows implementing optimal tracking strategies using dynamic location areas based on cell distance (measured in cells). The main characteristics of this labelling procedure are scalability and compatibility with current cellular networks. - Author(s): N.C. Sagias ; D.A. Zogas ; G.K. Karagiannidis ; G.S. Tombras
- Source: Electronics Letters, Volume 39, Issue 20, p. 1472 –1474
- DOI: 10.1049/el:20030956
- Type: Article
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A novel approach to the performance analysis of switched-and-stay combining diversity receivers over independent Weibull fading channels is presented. Closed-form expressions are extracted for important performance parameters, such as the average output signal-to-noise ratio, the amount of fading, the outage probability, and the switching rate.
Feasibility of local location agents at radio access networks for future cellular systems
Labelling mechanism to support distance-based dynamic location updating in cellular networks
Performance analysis of switched diversity receivers in Weibull fading
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- Author(s): Y. Okamoto ; Y. Ando ; K. Hataya ; H. Miyamoto ; T. Nakayama ; T. Inoue ; M. Kuzuhara
- Source: Electronics Letters, Volume 39, Issue 20, p. 1474 –1475
- DOI: 10.1049/el:20030947
- Type: Article
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An AlGaN/GaN heterojunction FET with a field-modulating plate has been successfully fabricated. A maximum drain current of 900 mA/mm was obtained with a gate–drain breakdown voltage of over 150 V. A 24 mm-wide FET exhibited 96 W (4.0 W/mm) output power, 54% power-added efficiency and 8.5 dB linear gain at a drain bias of 32 V. - Author(s): W. Hafez ; Jie-Wei Lai ; M. Feng
- Source: Electronics Letters, Volume 39, Issue 20, p. 1475 –1476
- DOI: 10.1049/el:20030951
- Type: Article
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InP/InGaAs single heterojunction bipolar transistors (SHBTs) are fabricated exhibiting current-gain cutoff frequencies, fT of 509 GHz. The 0.35×12 µm2 devices consist of a 25 nm graded base and a 75 nm collector, have a breakdown BVCEO of 2.7 V, and operate at current densities above 1100 kA/cm2. This work demonstrates clear progress toward a THz transistor. - Author(s): R. Torres-Torres ; R.S. Murphy-Arteaga ; S. Decoutere
- Source: Electronics Letters, Volume 39, Issue 20, p. 1476 –1478
- DOI: 10.1049/el:20030936
- Type: Article
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A simple technique to determine MOSFET gate-bias dependent source and drain series resistances from experimental S-parameters is presented. This technique uses the measured data of a single device. The extracted data allow the accurate modelling of the bias dependence of the output resistance of the MOSFET up to 27 GHz.
96 W AlGaN/GaN heterojunction FET with field-modulating plate
InP/InGaAs SHBTs with 75 nm collector and fT>500 GHz
MOSFET bias dependent series resistance extraction from RF measurements
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- Author(s): S.G. Kim and C.D. Yoo
- Source: Electronics Letters, Volume 39, Issue 20, p. 1478 –1479
- DOI: 10.1049/el:20030952
- Type: Article
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A simple method for designing highly selective M-channel infinite-impulse response (IIR) cosine-modulated filter banks (CMFBs) is proposed. High selectivity is achieved by relaxing the perfect reconstruction condition. The proposed method is simple because the design is based on a two-channel lattice structure with first-order allpass filters. - Author(s): G.T. Park ; D.H. Park ; J.H. Lee ; K.K. Lee
- Source: Electronics Letters, Volume 39, Issue 20, p. 1479 –1481
- DOI: 10.1049/el:20030958
- Type: Article
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A steering angle error compensation (SAEC) algorithm that is appropriate for a rapidly moving source environment is presented. The proposed method utilises a modal covariance matrix from multiple frequency components instead of the multiple snapshots in a narrowband SAEC, and estimates the steering error that maximises the output power of the modal space processing. As such, the steering error can be compensated with short observation times. The performance of the proposed method is demonstrated based on a Monte Carlo simulation.
Highly selective M-channel IIR cosine-modulated filter banks
Steering angle error compensation with short observation times using modal space processing
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- Author(s): D. Mattera ; L. Paura ; F. Sterle
- Source: Electronics Letters, Volume 39, Issue 20, p. 1481 –1482
- DOI: 10.1049/el:20030945
- Type: Article
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Transmission over multiple-input/multiple-output (MIMO) channels, which exhibit time-dispersion since high bit-rate services must be provided, is considered. A minimum mean square error (MMSE) equaliser is proposed, based on widely linear rather than linear processing implemented via finite impulse response filters.
Widely linear MMSE equaliser for MIMO linear time-dispersive channel
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54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article
