Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 32, Issue 2, 18 January 1996
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Volume 32, Issue 2
18 January 1996
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- Author(s): R. Gómez and H. Jardón
- Source: Electronics Letters, Volume 32, Issue 2, p. 81 –82
- DOI: 10.1049/el:19960084
- Type: Article
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–82
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A novel amplifier structure that compensates nonlinearities by means of a special type of feedback is proposed. The high linearity performance is combined with a high gain that is unreachable with the conventional feedback structure. A practical configuration of the structure is given as an improvement over both a conventional feedback amplifier and a typical feedforward amplifier. Experimental results are provided to verify the high linear characteristic of the practical structure.
Highly linear amplifier for high gain applications
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- Author(s): C.G. Parini and M. Philippakis
- Source: Electronics Letters, Volume 32, Issue 2, p. 82 –83
- DOI: 10.1049/el:19960074
- Type: Article
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–83
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The physical optics technique is used to compare the performance of single offset compact antenna test ranges with different reflector edge treatments and rim shapes. A comparison between reflector edge taper and rim serrations in controlling edge diffraction is demonstrated. - Author(s): D. Eclercy ; M. Rammal ; A. Reineix ; B. Jecko
- Source: Electronics Letters, Volume 32, Issue 2, p. 84 –85
- DOI: 10.1049/el:19960094
- Type: Article
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–85
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The purpose of this communication is to compare real and power far field patterns synthesis arrays. The synthesised pattern is an optimum approximation to the prescribed power pattern in a minmax sense. A comparison between real and power formulations is realised for shaped (cosecante) and pencil beams. - Author(s): G. Forma and J.M. Laheurte
- Source: Electronics Letters, Volume 32, Issue 2, p. 85 –86
- DOI: 10.1049/el:19960099
- Type: Article
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–86
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Medium power oscillating microstrip antennas working at 4 GHz are built with a low-cost GaAs MESFET. Two CPW-fed slot shapes are used for the microstrip patch antenna excitation, a straight loop and a slot loop, leading to 30 and 26 mW radiated power, respectively. The slot loop is shown to provide an easy-to-bias solution to the feeding of active radiating elements.
Compact antenna test range reflector edge treatment
Comparison between real and power optimisation methods for arrays synthesis of antennas
CPW-fed oscillating microstrip antennas
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- Author(s): E. Grass and S. Jones
- Source: Electronics Letters, Volume 32, Issue 2, p. 86 –88
- DOI: 10.1049/el:19960068
- Type: Article
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A new method for designing asynchronous circuits is described. It uses additional circuitry to monitor the activity of internal nodes. When all transitions have halted, a completion signal is generated. Details of the circuit and design methodology are given. The proposed approach results in faster operation than synchronous circuits, with only a small circuit overhead incurred. - Author(s): N. Barry
- Source: Electronics Letters, Volume 32, Issue 2, p. 88 –89
- DOI: 10.1049/el:19960077
- Type: Article
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–89
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Binary rate modulation is shown to provide an optimal power dispatch of the AC mains over an integer number of the AC cycles. A harmonic analysis of the signals is presented, along with power factor results.
Activity-monitoring completion-detection (AMCD): A new approach to achieve self-timing
Electric power dispatch using binary rate modulation
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- Author(s): Oui SukUhm ; Soon YoungYoon ; Hwang SooLee
- Source: Electronics Letters, Volume 32, Issue 2, p. 89 –91
- DOI: 10.1049/el:19960087
- Type: Article
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–91
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A practical coherent detection scheme for biorthogonal signals over Rayleigh fading channels is proposed. The proposed scheme improves the bit error rate (BER) performance compared to the noncoherent detection schemes for biorthogonal signals. It also outperforms the coherent and noncoherent detection schemes for orthogonal signals with comparable bandwidth efficiency. The BER performance for a Rayleigh fading channel with two path diversity combining is obtained by computer simulation. The results show that the required average signal-to-noise ratio per bit γb can be reduced by as much as 1.4 dB when we use this system in the CDMA cellular reverse link. - Author(s): B. Desplanches ; S. Buljore ; J.F. Diouris
- Source: Electronics Letters, Volume 32, Issue 2, p. 91 –92
- DOI: 10.1049/el:19960031
- Type: Article
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–92
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A multisensor equaliser based on the Viterbi algorithm is presented. The equaliser consists of a multisensor Viterbi estimator and adaptive channel estimators. Its complexity is described and its performance over mobile channels is analysed. it is concluded that the multisensor Viterbi equaliser is capable of considering truncated channels, thereby allowing a considerable reduction in complexity. - Author(s): Bee EngToh ; D.C. McLernon ; I. Lakkis
- Source: Electronics Letters, Volume 32, Issue 2, p. 92 –94
- DOI: 10.1049/el:19960078
- Type: Article
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–94
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A method for efficiently implementing super exponential (SE) blind equalisation is proposed. The method, based on fast Kalman filtering theory, is recursive in order and in time, and leads to a significant reduction in the number of arithmetic operations. Using the order update by partitioning the covariance matrix of the first hundred data in a specific form, a fast initialisation is implemented. The resulting algorithm achieves the same theoretical fast convergence characteristics as the original SE algorithm but with a significant reduction in arithmetic operations. - Author(s): P. Zavarsky and N. Fujii
- Source: Electronics Letters, Volume 32, Issue 2, p. 94 –95
- DOI: 10.1049/el:19960096
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–95
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It is shown that the elimination of terms from crossterm positions in the third order Wigner time-frequency distribution is possible if the cross ambiguity function is defined, and if a kernel function is employed in the cross frequency-ambiguity domain. - Author(s): A. Shah ; S. Atungsiri ; A. Kondoz ; B. Evans
- Source: Electronics Letters, Volume 32, Issue 2, p. 95 –97
- DOI: 10.1049/el:19960032
- Type: Article
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–97
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To alleviate congestion at thin route multiplexers such as are used in VSAT systems, some transmitters are forced to drop speech packets. Receiver reconstruction of the lost speech invariably produces some degradation of quality. The authors exploit the knowledge of dropped packets at the transmitter to mitigate this degradation. - Author(s): N. Benvenuto ; A. Salloum ; L. Tomba
- Source: Electronics Letters, Volume 32, Issue 2, p. 97 –98
- DOI: 10.1049/el:19960073
- Type: Article
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–98
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The performance, in terms of bit error rate, of various data detectors at the output of a 1 bit differential demodulator for DECT receivers, is evaluated assuming static channels. The relevant result is that a one-tap decision feedback equaliser with an optimised threshold value yields a similar performance to the much more complex Viterbi algorithm. Moreover, in the presence of channels with a strong intersymbol interference, the decision feedback equaliser gains more than 2 dB in terms of SNR at BER = 10-3 with respect to the threshold detector. - Author(s): J. Bigham and K. Scrupps
- Source: Electronics Letters, Volume 32, Issue 2, p. 98 –99
- DOI: 10.1049/el:19960089
- Type: Article
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–99
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The authors describe the multi-layered standardised telecommunications management network (TMN) architecture of a model-based fault maintenance application which has been developed by two RACE projects, AIM and GEMA. Experience from the applications suggests that model-based reasoning offers a common solution for facilitating the development of TMNs.
Coherent detection of biorthogonal signals over Rayleigh fading channels
Complexity reduction for a multisensor Viterbi equaliser
Enhancing the super exponential method of blind equalisation with the fast RLS Kalman algorithm
Introduction of cross ambiguity function for elimination of crossterms in Wigner distribution of the third order
Lossy multiplexing of low bit rate speech in thin route telephony
Performance of non-coherent digital equalisers in DECT systems
Telecommunications maintenance application using model-based reasoning
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- Author(s): D. Mateo and A. Rubio
- Source: Electronics Letters, Volume 32, Issue 2, p. 99 –101
- DOI: 10.1049/el:19960082
- Type: Article
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p.
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–101
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Adiabatic switching is one technique for designing low power IC. To diminish its expensive silicon area requirements a quasi-adiabatic ternary logic is proposed. The performances of a half adder using this logic have been obtained, showing a 65% area saving with respect to adiabatic binary logic.
Quasi-adiabatic ternary CMOS logic
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- Author(s): K.G. Larkin
- Source: Electronics Letters, Volume 32, Issue 2, p. 101 –102
- DOI: 10.1049/el:19960081
- Type: Article
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–102
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A simple nonlinear (quadratic) filter is shown to demodulate bandpass sampled AM signals efficiently. The filter is based upon a discrete version of the recently introduced Teager-Kaiser energy operator, but also closely resembles a complex digital sampling demodulator. Such a filter can also be implemented in analogue circuitry.
Efficient demodulator for bandpass sampled AM signals
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- Author(s): K. Huber
- Source: Electronics Letters, Volume 32, Issue 2, p. 102 –103
- DOI: 10.1049/el:19960072
- Type: Article
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–103
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The author gives a simple expression for the polynomial y(x) which solves the polynomial equation y(x)2 ≡ t(x) mod G(x), where t(x), y(x) and G(x) are polynomials over the field GF(2m). The solution of such an equation is a step in the so called Patterson algorithm for decoding binary Goppa codes. The result may also be useful for other applications.
Note on decoding binary Goppa codes
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- Author(s): V.I. Prodanov and M.M. Green
- Source: Electronics Letters, Volume 32, Issue 2, p. 104 –105
- DOI: 10.1049/el:19960076
- Type: Article
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–105
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A CMOS current mirror with lower than VDS(sat) input voltage requirement is presented. It is shown that the structure can be modified to provide cascode-type output resistance for output voltages even lower than 2VDS(sat). The topology of the proposed current mirror allows low distortion operation from a single 1.5 V supply, which makes it attractive for low-voltage applications. - Author(s): T. Voo and C. Toumazou
- Source: Electronics Letters, Volume 32, Issue 2, p. 105 –106
- DOI: 10.1049/el:19960069
- Type: Article
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–106
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A temperature stable external reference resistor is used to accurately control and tune the transconductance of an integrated current-mirror. The technique can be used to tune and optimise the bandwidth of the current-mirror for application in CMOS filters.
CMOS current mirrors with reduced input and output voltage requirements
Precision temperature stabilised tunable CMOS current-mirror for filter applications
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- Author(s): Q. Chen and W.P. Risk
- Source: Electronics Letters, Volume 32, Issue 2, p. 107 –108
- DOI: 10.1049/el:19960097
- Type: Article
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p.
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–108
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Waveguides for quasi-phasematched frequency doubling were fabricated using an applied electric field to produce periodic poling and ion-exchange to produce channel waveguides. A blue output power of 12 mW was achieved with 146 mW of infrared light in a 3.6 mm-long waveguide. - Author(s): M. Okai ; I.F. Lealman ; L.J. Rivers ; C. Dix ; M.J. Robertson
- Source: Electronics Letters, Volume 32, Issue 2, p. 108 –109
- DOI: 10.1049/el:19960083
- Type: Article
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–109
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The authors propose and demonstrate a novel InP-based waveguide filter, the in-line Fabry-Perot. The device is designed to give a number of sharp equally spaced FP like transmission peaks without the need of cleaved mirror facets. Fabricated devices give more than 18 clear 1 nm spaced transmission peaks. - Author(s): H. Yamazaki ; Y. Sakata ; M. Yamaguchi ; Y. Inomoto ; K. Komatsu
- Source: Electronics Letters, Volume 32, Issue 2, p. 109 –111
- DOI: 10.1049/el:19960092
- Type: Article
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–111
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The authors have reduced modulator drive voltage in DFB-LD/modulator integrated light sources (DFB/MODs) taking fabrication tolerance into account. By enhancing the quantum confined Stark effect through well width increase and optimising the doping profile, DFB/MODS with >13 dB extinction ratio at 1.5 V and >4 mW (+6 dBm) output power at 100 mA were achieved while maintaining a reasonably large fabrication tolerance. - Author(s): U. Koren ; B.I. Miller ; M.G. Young ; M. Chien ; G. Raybon ; T. Brenner ; R. Ben-Michael ; K. Dreyer ; R.J. Capik
- Source: Electronics Letters, Volume 32, Issue 2, p. 111 –112
- DOI: 10.1049/el:19960053
- Type: Article
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The authors demonstrate a 1.55 µm wavelength multiquantum well semiconductor optical amplifier, integrated with bulk layer electroabsorption modulators and passive waveguide beam expanders at the input and output ports. The device has a fibre to fibre gain of 9 dB, an extinction ratio of 15 dB per modulator, a spectral range >35 nm, and polarisation sensitivity <1 dB. - Author(s): E. Pawlowski ; K. Takiguchi ; M. Okuno ; K. Sasayama ; A. Himeno ; K. Okamoto ; Y. Ohmori
- Source: Electronics Letters, Volume 32, Issue 2, p. 113 –114
- DOI: 10.1049/el:19960095
- Type: Article
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–114
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The authors report the realisation of an integrated-optic variable bandwidth and tunable centre frequency filter using a transversal-form programmable optical filter with 32 taps. The bandwidth is varied from 44 to 84 GHz with a fixed centre frequency. Also, the centre frequency is tuned over 105 GHz with a fixed bandwidth.
High efficiency quasi-phasematched frequency doubling waveguides in KTiOPO4 fabricated by electric field poling
In-line Fabry-Perot optical waveguide filter with quasi-chirped gratings
Low drive voltage (1.5 Vp.p.) and high power DFB-LD/modulator integrated light sources using bandgap energy controlled selective MOVPE
Polarisation insensitive semiconductor optical amplifier with integrated electroabsorption modulators
Variable bandwidth and tunable centre frequency filter using transversal-form programmable optical filter
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- Author(s): P.D. Floyd ; B.J. Thibeault ; L.A. Coldren ; J.L. Merz
- Source: Electronics Letters, Volume 32, Issue 2, p. 114 –116
- DOI: 10.1049/el:19960050
- Type: Article
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–116
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Etched-pillar, bottom-emitting vertical cavity lasers have been fabricated using lateral oxidation of AlAs. The devices have threshold currents as low as 315 µA for a 4 µm × 4 µm, three quantum well active region. Using the data and a numerical model the authors extract excess optical and carrier losses and an effective surface recombination velocity for the devices. The data show that size dependent optical scattering persists as the lasers are scaled to smaller sizes, but lateral carrier leakage is suppressed, allowing for scaling of lasers to small sizes to achieve lower threshold currents. - Author(s): B.-S. Yoo ; H.Y. Chu ; M.S. Park ; H.-H. Park ; E.-H. Lee
- Source: Electronics Letters, Volume 32, Issue 2, p. 116 –117
- DOI: 10.1049/el:19960070
- Type: Article
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–117
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The authors report the successful development of a method stabilising the fundamental transverse mode of a vertical-cavity surface-emitting laser using a low-temperature-deposited amorphous GaAs (a-GaAs) layer of a high refractive index. For a device of 10 µm diameter, stable fundamental mode emission has been observed over a wide range of current. Results are attributed to the antiguide effect of the a-GaAs-buried structure. - Author(s): T. Matsuyama ; C. Furukawa ; A. Makuta ; H. Kobayashi ; K. Ohtsuka ; A. Tanaka ; J. Kinoshita
- Source: Electronics Letters, Volume 32, Issue 2, p. 117 –119
- DOI: 10.1049/el:19960042
- Type: Article
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–119
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A new low-capacitance narrow mesa-stripe structure for InGaAsP/InP planar buried heterostructure (PBH) DFB lasers is presented. This structure is realised using a newly developed selected area evaporation technique. The electrode layer is metalised on one of the vertical side walls of the narrow mesa, with self-aligned bonding pad connection. The authors report the fabrication of the electrode structure, the device fabrication and its performance and reliability. - Author(s): R.J. Campbell ; J.R. Armitage ; G. Sherlock ; D.L. Williams ; R. Payne ; M. Robertson ; R. Wyatt
- Source: Electronics Letters, Volume 32, Issue 2, p. 119 –120
- DOI: 10.1049/el:19960075
- Type: Article
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–120
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The use of angled facet semiconductor laser chips in fibre grating lasers (FGL) is shown to dramatically improve device characteristics over conventional normal facet FGLs. This improvement in performance allows the laser to be operated with no temperature control at 155 Mbit/s and makes it feasible for it to be used as a wavelength stable, uncooled source in a WDM optical access network. - Author(s): O. Sahlén ; L. Lundqvist ; S. Funke
- Source: Electronics Letters, Volume 32, Issue 2, p. 120 –122
- DOI: 10.1049/el:19960079
- Type: Article
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–122
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A DFB-laser monolithically integrated with a short (150 µm) bulk electroabsorption (EA) modulator has been developed on a semi-insulating substrate. An extinction ratio of 10 dB for 0 to –2 V modulation was obtained with low chirp. Penalty-free 10 Gbit/s transmission over 41 km standard fibre, and 2.5 dB penalty over 71 km standard fibre was achieved.
Scalable etched-pillar, AlAs-oxide defined vertical cavity lasers
Stable transverse mode emission in vertical-cavity surface-emitting lasers antiguided by amorphous GaAs layer
Step-coverage metallisation using selected area evaporation technique for narrow mesa InGaAsP/InP lasers
Wavelength stable uncooled fibre grating semiconductor laser for use in an all optical WDM access network
Zero-bias and low-chirp, monolithically integrated 10 Gbit/s DFB laser and electroabsorption modulator on semi-insulating InP substrate
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- Author(s): M. Wollitzer ; J. Buechler ; F. Schäffler ; J.-F. Luy
- Source: Electronics Letters, Volume 32, Issue 2, p. 122 –123
- DOI: 10.1049/el:19960088
- Type: Article
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–123
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Silicon flat profile double drift (DD) and double Read (DLHL) IMPATT diodes have been designed and fabricated, using a novel beamlead process. The goal for the design of the active layer is a maximum negative resistance of the device for a given DC power density. Experimental results are 225 mW of RF power with DD diodes and 300 mW for DLHL diodes, both in the 140 GHz range. - Author(s): A. Tripathi ; J. Li ; R.T. Kollipara ; V.K. Tripathi
- Source: Electronics Letters, Volume 32, Issue 2, p. 123 –125
- DOI: 10.1049/el:19960071
- Type: Article
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–125
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The propagation characteristics of a microstrip line in an inhomogeneous medium with an inclined ground plane are analysed using the method of lines. The numerical results of quasistatic, as well as frequency dependent propagation, characteristics for a typical microstrip line on an inclined plane are presented.
D-band Si-IMPATT diodes with 300 mW CW output power at 140 GHz
Method of lines for the analysis of microstrip structures on inclined planes
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- Author(s): R. Sabella and E. Iannone
- Source: Electronics Letters, Volume 32, Issue 2, p. 125 –126
- DOI: 10.1049/el:19960086
- Type: Article
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–126
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A novel optical cross-connect (OXC) architecture is reported. It allows modularity both in input/output fibres and in wavelength channels carried on each fibre. The transmission performance analysis of a network employing such OXCs is reported. - Author(s): B. Charbonnier and T. Georges
- Source: Electronics Letters, Volume 32, Issue 2, p. 126 –128
- DOI: 10.1049/el:19960080
- Type: Article
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The path-averaged soliton validity domain without soliton control is evaluated by means of soliton interaction and jitter evaluations. It is shown that this domain is larger than expected and allows a 40 Gbit/s soliton transmission over 1000 km with 100 km amplifier spacing.
Modular optical path cross-connect
Numerical investigation of the path-averaged soliton validity domain without soliton control
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- Author(s): M.G. Xu ; H. Geiger ; J.P. Dakin
- Source: Electronics Letters, Volume 32, Issue 2, p. 128 –129
- DOI: 10.1049/el:19960022
- Type: Article
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–129
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A fibre Bragg grating pressure sensor with enhanced sensitivity has been demonstrated, using a grating housed in a glass bubble. This configuration increases the pressure sensitivity and effectively reduces the thermal crosstalk by a factor of 4. A pressure resolution of 0.5% over a full measurement range of 14 MPa has been achieved. This concept could lead to a range of sensors using fibre gratings with mechanical amplifiers to enhance sensitivity.
Fibre grating pressure sensor with enhanced sensitivity using a glass-bubble housing
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- Author(s): Z.X. Zhang ; W. Qiu ; E.Y.B. Pun ; P.S. Chung ; Y.Q. Shen
- Source: Electronics Letters, Volume 32, Issue 2, p. 129 –130
- DOI: 10.1049/el:19960090
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Nonlinear refractive indices n2 of two push-pull azobenzene doped polymer materials have been measured using the single beam Z-scan method. The value of sample B is as high as 1.7 × 10-6 cm2/W, and is nearly two orders of magnitude larger than that of sample A. The self phase modulation pattern of sample B has been observed using very low incident laser intensity. The origins of the large nonlinear optical response of the two doped polymer materials are discussed.
Doped polymer films with high nonlinear refractive indices
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- Author(s): R.-H. Yuang and J.-I. Chyi
- Source: Electronics Letters, Volume 32, Issue 2, p. 131 –132
- DOI: 10.1049/el:19960085
- Type: Article
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The authors show that the capacitance of the metal-semiconductor-metal photodetector call be minimised by using a very small or large finger width, with emphasis on the application for the large-area detector. Taking the quantum efficiency into account, the optimum sensitivity of the detector is obtained for the MSM-PD with very slim fingers. - Author(s): F.A. Kish ; D.A. Vanderwater ; D.C. DeFevere ; D.A. Steigerwald ; G.E. Hofler ; K.G. Park ; F.M. Steranka
- Source: Electronics Letters, Volume 32, Issue 2, p. 132 –134
- DOI: 10.1049/el:19960098
- Type: Article
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–134
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Semiconductor wafer bonding is employed to fabricate very high efficiency transparent-substrate (TS) AlGaInP light-emitting diodes (LEDs) with projected lifetimes in excess of 100000 h under accelerated life test at an ambient temperature of 55°C (70 A/cm2). Furthermore, we demonstrate wafer-bonded TS AlGaInP red LEDs with external quantum efficiencies of 23.7% at 635.6 nm (20 mA, DC, 250°C). - Author(s): L.D. Westbrook ; D.G. Moodie ; I.F. Lealman ; S.D. Perrin
- Source: Electronics Letters, Volume 32, Issue 2, p. 134 –135
- DOI: 10.1049/el:19960037
- Type: Article
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–135
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The linearity of narrow-band RF and microwave analogue optical transmitters can be improved by re-modulating their output by using an intensity modulator with controllable nonlinearity. The authors demonstrate linearisation of a distributed feedbaek (DFB) laser using a monolithically-integrated electroabsorption (EA) modulator. The spurious-free dynamic range of an unoptimised device is increased from 96 dBm/Hz2/3 to 117 dBm/Hz6/7.
Effects of finger width on large-area InGaAs MSM photodetectors
Highly reliable and efficient semiconductor wafer-bonded AlGaInP/GaP light-emitting diodes
Method for linearising analogue DFB lasers using an integrated MQW electroabsorption modulator
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- Author(s): W.K. Tam and V.N. Tran
- Source: Electronics Letters, Volume 32, Issue 2, p. 135 –137
- DOI: 10.1049/el:19960091
- Type: Article
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A novel multi-ray propagation model for indoor wireless communications is presented. The model employs a combination of 3-D geometry and image techniques in ray tracing. This approach simplifies the ray tracing algorithm and creates a low cost and efficient computer propagation model in a PC platform.
Multi-ray propagation model for indoor wireless communications
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- Author(s): M. de Murcia ; E. Richard ; P. Llinares ; F. Pascal ; J. Vanbremeersch
- Source: Electronics Letters, Volume 32, Issue 2, p. 137 –138
- DOI: 10.1049/el:19960093
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High frequency noise of Al0.25Ga0.75As resistors with two different doping levels was measured against electric field. The noise temperatures and the diffusion coefficients are discussed in their relation to carrier concentrations. The results show that 1/f noise is observed in the hot carrier range. - Author(s): J. Zeng ; P.A. Mawby ; M.S. Towers ; K. Board
- Source: Electronics Letters, Volume 32, Issue 2, p. 138 –140
- DOI: 10.1049/el:19960067
- Type: Article
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An experimentally verified hybrid model of field-dependent mobility is proposed for the 2-D numerical simulation of power VDMOSTs. With the new scheme, the 2-D simulation of the DC output characteristics agrees very well with the experimental results with a single value of the surface degradation factor. - Author(s): K. Billen ; M.J. Kelly ; R.M. Gwilliam ; R.J. Wilson ; M. Henini
- Source: Electronics Letters, Volume 32, Issue 2, p. 140 –141
- DOI: 10.1049/el:19960046
- Type: Article
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Long-range proton implantation has been carried out through double-barrier diodes, as may be required during vertical monolithic-integration. The anneal-induced recovery of the I-V characteristics is shown to improve if the implantation is carried out above room-temperature. After annealing, the peak current through one proton-implanted sample was higher than that before implantation. - Author(s): T. Hwang ; T.M. Kao ; D. Glajchen ; P. Chye
- Source: Electronics Letters, Volume 32, Issue 2, p. 141 –143
- DOI: 10.1049/el:19960100
- Type: Article
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0.2 µm gate length pseudomorphic AlGaAs/InGaAs/GaAs HEMTs in low-cost plastic packaging have been manufactured in our laboratory. The PHEMTs show typical peak extrinsic transconductances of 390 – 430 mS/mm. From S-parameter measurements, the PHEMTs show typical current-gain cutoff frequencies of 65 – 72 GHz. The devices on-wafer exhibited 0.40 – 0.47 dB noise figure and 12.6 – 13.5 dB associated gain at 12 GHz, respectively. The authors report the first demonstration of devices in a plastic packaging with 1.0 – 1.2 dB noise figure and 9.5 – 9.9 dB associated gain. The volume production of high performance AlGaAs/InGaAs/GaAs PHEMTs in plastic packaging is suitable for direct-broadcast satellite applications.
Carrier concentration effects on hot electrons noise in n+nn+ Al0.25Ga0.75As devices
Hybrid field-dependent mobility model for the simulation of power VDMOSTs
Moderate-dose proton implantation through double-barrier structures
Pseudomorphic AlGaAs/InGaAs/GaAs HEMTs in low-cost plastic packaging for DBS application
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