Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887
banner image
image of Volume 3, Issue 5
Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 3, Issue 5, May 1967

Volumes & issues:

Volume 3, Issue 5

May 1967

Improved phase characteristic of a d.c.-pumped cyclotron-synchronous-wave amplifier
Superconducting memory device using Josephson junctions
On the scope of validity of the Manley-Rowe relations
Wave-number symmetries for guided complex waves
Integrated direct-coupled gyrator
Asymptotic solution of oblique waves in inhomogeneous vertically magnetised plasma
Absorption and scintillation effects at 3 mm wavelength on a short line-of-sight radio link
  • Author(s): J.A. Lane ; A.C. Gordon-Smith ; A.M. Zavody
  • Source: Electronics Letters, Volume 3, Issue 5, p. 185 –186
  • DOI:  10.1049/el:19670146
  • Type: Article
  • + Show details - Hide details
  • p. 185 –186 (2)
    Measurements on a path 150m long, with narrow-beam transmitting and receiving antennas 2m above the ground at one end of the path, and a reflecting plate at the other end, at the same height, have shown attenuation in rain to be about 17dB/km and 8dB/km for rainfall rates of 48mm/h and 7mm/h, respectively. Amplitude variations of up to ±0.4dB can occur in a time interval of the order of 1s during sunny, humid conditions in summer.
    Add to favourites
    Export citations
New short-circuit-stable negative-resistance circuit with no internal bias supplies
  • Author(s): K.V. Ramanan  and  R.C. Varshney
  • Source: Electronics Letters, Volume 3, Issue 5, p. 186 –188
  • DOI:  10.1049/el:19670147
  • Type: Article
  • + Show details - Hide details
  • p. 186 –188 (3)
    A new negative-impedance circuit, which has no internal bias and which presents a short-circuit-stable negative-resistance I/V characteristic, is described. The circuit, employing two n-p-ntransistors and five resistances, permits a much wider range of control over the co-ordinates of the peak and valley points than that obtainable with existing circuits. Design formulas and experimental results are also presented.
    Add to favourites
    Export citations
Note on the Z transform
Effect of finite recovery time on charge-storage diode frequency multipliers
Computer method of determining the propagation coefficient of slotted waveguides
  • Author(s): P.J.B. Clarricoats  and  K.R. Slinn
  • Source: Electronics Letters, Volume 3, Issue 5, p. 191 –192
  • DOI:  10.1049/el:19670150
  • Type: Article
  • + Show details - Hide details
  • p. 191 –192 (2)
    A method is described whereby the propagation coefficient of a longitudinally slotted waveguide can be readily determined using a digital computer. The case of a slotted circular waveguide is considered, and the complex propagation coefficient determined for an H11-type leaky-waveguide mode of propagation. Excellent agreement is found with the experimental results reported by Goldstone and Oliner.
    Add to favourites
    Export citations
On the noise exchangeable measure of a negative-resistance amplifier containing lossy components
Lyapunov estimates of oscillator transients in p.c.m. systems
Temperature influence on the channel conductance of m.o.s. transistors
  • Author(s): H.C. de Graaff  and  J.A.V. Nielen
  • Source: Electronics Letters, Volume 3, Issue 5, p. 195 –196
  • DOI:  10.1049/el:19670153
  • Type: Article
  • + Show details - Hide details
  • p. 195 –196 (2)
    The channel conductance of nchannel m.o.s. transistors was measured as a function of gate voltage in the temperature range 100–450°K. From the variation of the gate threshold voltage with temperature, the density of surface states is calculated. The influence of the bulk depletion charge is taken into account. For the measured samples, the density of surface states is shown to be very small. From this fact it is concluded that the slope of the conductance is a correct measure of the mobility of the electrons in the channel.
    Add to favourites
    Export citations
Contribution to the study of metal contacts on semiconductor real surfaces
New class of pseudorandom binary sequences
Optimisation of lowpass systems for analogue signals
Transfer functions with poles located on parabolic and elliptic contours
  • Author(s): B.D. Rakovich  and  D.M. Rabrenovich
  • Source: Electronics Letters, Volume 3, Issue 5, p. 201 –202
  • DOI:  10.1049/el:19670157
  • Type: Article
  • + Show details - Hide details
  • p. 201 –202 (2)
    Polynomial transfer functions with parabolic and elliptic distribution of poles, which have been studied previously by Mullick and Scanlan, are derived from the Butterworth unit circle by suitable conformal mappings. Transient responses of the filters with elliptic distribution of poles for orders n=3−6 have been calculated and compared with those of parabolic and catenary filters.
    Add to favourites
    Export citations
Transient analysis using quasiperiodic forcing functions
Note on the synthesis of ternary combinatorial networks using T gate operators
Sensitivity of an eigenvector of a multivariable control system
Limitations on the use of describing functions
Calculation of steady-state errors in digital-to-analogue ladder convertors
Operation of field-effect transistors at liquid-helium temperature
  • Author(s): C.G. Rogers  and  A.K. Jonscher
  • Source: Electronics Letters, Volume 3, Issue 5, p. 210 –211
  • DOI:  10.1049/el:19670163
  • Type: Article
  • + Show details - Hide details
  • p. 210 –211 (2)
    D.C. operation of silicon m.o.s.t., devices of pchannel enhancement and nchannel depletion types at 4°K is described. The former has transfer and drain characteristics at 4°K which are substantially similar to those at room temperature. The latter has a nonlinear ID/VD characteristic. A large drain ‘threshold’ is found in a few devices and is traced to the absence of gate overlap with drain and source contacts.
    Add to favourites
    Export citations
Optimisation of the Zubov and Ingwerson methods for constructing Lyapunov functions
Failure mechanisms in Gunn diodes
  • Author(s): B. Jeppsson  and  I. Marklund
  • Source: Electronics Letters, Volume 3, Issue 5, p. 213 –214
  • DOI:  10.1049/el:19670165
  • Type: Article
  • + Show details - Hide details
  • p. 213 –214 (2)
    Observations on electrical properties of planar Gunn diodes and on failure mechanisms using Sn–Ag and In–Au contacts are reported. A conducting channel of Sn(In) is proved to be responsible for the final catastrophic failure. Excess heat is generated at the anode, where also the breakdown is observed to start. Mechanisms starting the breakdown (hole injection and combined ion drift and diffusion of impurities) are discussed.
    Add to favourites
    Export citations
Theoretical considerations of time delay for bias-field pulsing in y.i.g.
  • Author(s): J.H. Collins  and  H.R. Zapp
  • Source: Electronics Letters, Volume 3, Issue 5, p. 214 –217
  • DOI:  10.1049/el:19670166
  • Type: Article
  • + Show details - Hide details
  • p. 214 –217 (4)
    Theoretical calculations are performed which compliment experimental results achieved with bias-field pulsing of magnetoelastic waves propagating in yttrium-iron garnet. For the inhomogeneous magnetic field case, under the application of a maintained field step, the magnetoelastic régime is divided into five regions in order to investigate the properties of time delay, frequency translation, frequency modulation, pulse expansion, pulse inversion and pulse compression. The results for a field ramp applied to the spinwave régime are also evaluated.
    Add to favourites
    Export citations
Analogue multiplier using p–njunction capacitance
  • Author(s): N. Racoveanu
  • Source: Electronics Letters, Volume 3, Issue 5, p. 217 –218
  • DOI:  10.1049/el:19670167
  • Type: Article
  • + Show details - Hide details
  • p. 217 –218 (2)
    One input voltage of the multiplier acts upon the dynamic capacitance of a p-njunction. The other input voltage acts upon the frequency of a square-wave signal. During half a period of the square-wave signal, the current in the RC circuit decays exponentially to nearly zero. The detected current is proportional to the product of the input voltages. The limitations of the multiplier are the one-quadrant multiplier and the limited maximum frequency response.
    Add to favourites
    Export citations
Influence of interface states on the capacitance of homo- and heterojunctions
Simple method for determining minimum value of noise constant of tunnel diode
Coupled modes in a spherical resonator with a nonuniform impedance boundary
Electron current density and electrostatic potential in a p–n-abrupt-junction diode as obtained by exact computer solution of the differential equations
  • Author(s): M. Sánchez
  • Source: Electronics Letters, Volume 3, Issue 5, p. 223 –224
  • DOI:  10.1049/el:19670171
  • Type: Article
  • + Show details - Hide details
  • p. 223 –224 (2)
    A computer solution for the current, continuity and Poisson's differential equations has been obtained for the forward steady-state behaviour of a one-dimensional abrupt p+–njunction germanium diode at zero and at low to high injection levels at 300°K. The numerical integration has been performed in and outside the space-charge layer of the p-njunction by using the Hall-Shockley-Read and the Auger recombination processes, and by eliminating the Boltzmann equilibrium approximation in the space-charge layer and the space-charge neutrality approximation in the quasineutral p and nregion. The numerical results for the electron-current density and the electrostatic potential distributions are given. The computed characteristic of the p-njunction is compared with experiment.
    Add to favourites
    Export citations
Transistorised total-lightning-flash counter
Erratum: Two-diode parametric amplifiers
Erratum: Inferential measurement of fluid flow from the cross-correlation of temperature fluctuations in the system
Erratum: On the derivative of the trace of a matrix quadratic form

Most viewed content for this Journal

Article
content/journals/el
Journal
5
Loading

Most cited content for this Journal

Print this page
This is a required field
Please enter a valid email address