Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 3, Issue 5, May 1967
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Volume 3, Issue 5
May 1967
Improved phase characteristic of a d.c.-pumped cyclotron-synchronous-wave amplifier
- Author(s): P.J. Bryant and M.G.F. Wilson
- Source: Electronics Letters, Volume 3, Issue 5, p. 177 –178
- DOI: 10.1049/el:19670140
- Type: Article
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Extensive computer calculations of the variation of output phase with pump strength, structure length and input power level have shown that the a.m.-p.m. conversion, in a d.c.-pumped cyclotron-synchronous-wave amplifier, is minimised at a frequency below the degenerate cyclotron frequency. Two forms of the optimised amplifier are suggested.
Superconducting memory device using Josephson junctions
- Author(s): T.D. Clark and J.P. Baldwin
- Source: Electronics Letters, Volume 3, Issue 5, p. 178 –179
- DOI: 10.1049/el:19670141
- Type: Article
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A superconducting storage device is proposed in which a Josephson tunnelling junction, switched by a control film strip, replaces the cryotron in a one-cryotron-per-bit storage cell. The device should be fast, work at 4.2° K and require a simple technology, which must, however, yield reproducible thin Josephson tunnelling layers.
On the scope of validity of the Manley-Rowe relations
- Author(s): G. Longo and C.G. Someda
- Source: Electronics Letters, Volume 3, Issue 5, p. 179 –180
- DOI: 10.1049/el:19670142
- Type: Article
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A discussion is presented on the validity of the Manley-Rowe relations when the ratio of the two basic frequencies is rational. In this case, as we show, a ‘degeneracy’ appears, which may be removed in practical cases by further considerations of the system.
Wave-number symmetries for guided complex waves
- Author(s): T. Tamir
- Source: Electronics Letters, Volume 3, Issue 5, p. 180 –182
- DOI: 10.1049/el:19670143
- Type: Article
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The appearance in pairs of complex waves is discussed for an open waveguiding structure. It is shown that the absence of losses in the system requires the simultaneous presence of two complex waves, the wavenumbers of which possess symmetry properties of the conjugate type. These properties still hold if radiation losses occur, and the symmetry disappears only if conduction losses are introduced.
Integrated direct-coupled gyrator
- Author(s): H.T. Chua and R.W. Newcomb
- Source: Electronics Letters, Volume 3, Issue 5, p. 182 –184
- DOI: 10.1049/el:19670144
- Type: Article
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An integrated gyrator is described. The device uses 1 diode, 12 resistors and 9 transistors, two of which are lateral p-n-p. Experimental results on gyration resistance, input impedance and resonant-circuit Q factor show excellent agreement with theory.
Asymptotic solution of oblique waves in inhomogeneous vertically magnetised plasma
- Author(s): S.S. Rao and H. Unz
- Source: Electronics Letters, Volume 3, Issue 5, p. 184 –185
- DOI: 10.1049/el:19670145
- Type: Article
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A method for finding higher-order asymptotic solutions, as compared with the well known WKBJ approximation, is given for oblique electromagnetic waves in an inhomogeneous anisotropic plasma with a vertical magnetostatic field.
Absorption and scintillation effects at 3 mm wavelength on a short line-of-sight radio link
- Author(s): J.A. Lane ; A.C. Gordon-Smith ; A.M. Zavody
- Source: Electronics Letters, Volume 3, Issue 5, p. 185 –186
- DOI: 10.1049/el:19670146
- Type: Article
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Measurements on a path 150m long, with narrow-beam transmitting and receiving antennas 2m above the ground at one end of the path, and a reflecting plate at the other end, at the same height, have shown attenuation in rain to be about 17dB/km and 8dB/km for rainfall rates of 48mm/h and 7mm/h, respectively. Amplitude variations of up to ±0.4dB can occur in a time interval of the order of 1s during sunny, humid conditions in summer.
New short-circuit-stable negative-resistance circuit with no internal bias supplies
- Author(s): K.V. Ramanan and R.C. Varshney
- Source: Electronics Letters, Volume 3, Issue 5, p. 186 –188
- DOI: 10.1049/el:19670147
- Type: Article
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A new negative-impedance circuit, which has no internal bias and which presents a short-circuit-stable negative-resistance I/V characteristic, is described. The circuit, employing two n-p-ntransistors and five resistances, permits a much wider range of control over the co-ordinates of the peak and valley points than that obtainable with existing circuits. Design formulas and experimental results are also presented.
Note on the Z transform
- Author(s): R. Genin
- Source: Electronics Letters, Volume 3, Issue 5, p. 188 –189
- DOI: 10.1049/el:19670148
- Type: Article
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In this letter, a table of Z transforms is given. The entries in the table can be derived by using two rules which are presented.
Effect of finite recovery time on charge-storage diode frequency multipliers
- Author(s): D.J. Roulston
- Source: Electronics Letters, Volume 3, Issue 5, p. 190 –191
- DOI: 10.1049/el:19670149
- Type: Article
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The efficiency of charge-storage diode frequency multipliers is calculated as a function of the order of multiplication and the recovery time for two basic circuits. Results are presented in the form of graphs.
Computer method of determining the propagation coefficient of slotted waveguides
- Author(s): P.J.B. Clarricoats and K.R. Slinn
- Source: Electronics Letters, Volume 3, Issue 5, p. 191 –192
- DOI: 10.1049/el:19670150
- Type: Article
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A method is described whereby the propagation coefficient of a longitudinally slotted waveguide can be readily determined using a digital computer. The case of a slotted circular waveguide is considered, and the complex propagation coefficient determined for an H11-type leaky-waveguide mode of propagation. Excellent agreement is found with the experimental results reported by Goldstone and Oliner.
On the noise exchangeable measure of a negative-resistance amplifier containing lossy components
- Author(s): M.L. Attanasio-D'Atri and G. Martinelli
- Source: Electronics Letters, Volume 3, Issue 5, page: 193 –193
- DOI: 10.1049/el:19670151
- Type: Article
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A simple formula is proposed for evaluating the noise exchangeable measure of a negative-resistance amplifier realised by a lossy embedding network and one noisy negative resistance. The presence of lossy components not only contributes in a direct way to the amplifier noise, but also increases the contribution due to the negative resistance as compared with the lossless case.
Lyapunov estimates of oscillator transients in p.c.m. systems
- Author(s): P.C. Parks and M.R. Miller
- Source: Electronics Letters, Volume 3, Issue 5, p. 193 –194
- DOI: 10.1049/el:19670152
- Type: Article
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Lyapunov techniques are applied to the problem of estimating phase overshoots in a p.c.m. system with controlled oscillators. Two possible approaches are examined for use in highly and sparsely connected networks, respectively. The case of full interconnection is also dealt with.
Temperature influence on the channel conductance of m.o.s. transistors
- Author(s): H.C. de Graaff and J.A.V. Nielen
- Source: Electronics Letters, Volume 3, Issue 5, p. 195 –196
- DOI: 10.1049/el:19670153
- Type: Article
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The channel conductance of nchannel m.o.s. transistors was measured as a function of gate voltage in the temperature range 100–450°K. From the variation of the gate threshold voltage with temperature, the density of surface states is calculated. The influence of the bulk depletion charge is taken into account. For the measured samples, the density of surface states is shown to be very small. From this fact it is concluded that the slope of the conductance is a correct measure of the mobility of the electrons in the channel.
Contribution to the study of metal contacts on semiconductor real surfaces
- Author(s): F. Forlani ; N. Minnaja ; G. Sacchi
- Source: Electronics Letters, Volume 3, Issue 5, p. 196 –198
- DOI: 10.1049/el:19670154
- Type: Article
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–198
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The forward characteristics of Au-n type epitaxial Si contacts, measured at different temperatures, are interpreted in terms of a nonsilicon layer between metal and semiconductor, with a contribution of surface states. The proposed model is verified by correlating the I/V characteristics, with the potential barrier height at null bias.
New class of pseudorandom binary sequences
- Author(s): R.F. Brown and G.C. Goodwin
- Source: Electronics Letters, Volume 3, Issue 5, p. 198 –199
- DOI: 10.1049/el:19670155
- Type: Article
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–199
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A new class of cyclic binary sequences is shown to exist, having an autocorrelation function representable by a series of periodically spaced alternate positive and negative spikes, with zero elsewhere.
Optimisation of lowpass systems for analogue signals
- Author(s): N.W. Lewis
- Source: Electronics Letters, Volume 3, Issue 5, p. 199 –201
- DOI: 10.1049/el:19670156
- Type: Article
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The design of analogue waveform transmission systems, e.g. for television, facsimile, telemetry and control signals, generally involes opposing desires for high speed of response and low amplitude of ringing. With both practical and theoretical needs in mind, a set of criteria is proposed for general-purpose optimisation of lowpass systems and individual filters.
Transfer functions with poles located on parabolic and elliptic contours
- Author(s): B.D. Rakovich and D.M. Rabrenovich
- Source: Electronics Letters, Volume 3, Issue 5, p. 201 –202
- DOI: 10.1049/el:19670157
- Type: Article
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Polynomial transfer functions with parabolic and elliptic distribution of poles, which have been studied previously by Mullick and Scanlan, are derived from the Butterworth unit circle by suitable conformal mappings. Transient responses of the filters with elliptic distribution of poles for orders n=3−6 have been calculated and compared with those of parabolic and catenary filters.
Transient analysis using quasiperiodic forcing functions
- Author(s): J.E. Shuttleworth
- Source: Electronics Letters, Volume 3, Issue 5, p. 203 –204
- DOI: 10.1049/el:19670158
- Type: Article
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The unit step is expressed as a convolution of frequency-modulated sinusoids. The response of a system to the step defined in this manner is then examined, and a method is indicated whereby transient information may be extracted.
Note on the synthesis of ternary combinatorial networks using T gate operators
- Author(s): S. Thelliez
- Source: Electronics Letters, Volume 3, Issue 5, p. 204 –205
- DOI: 10.1049/el:19670159
- Type: Article
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First, the functioning of a possible realisation using semiconductors of a ternary logical operator, defined as a T gate, and forming with the constants 0, 1, 2 a complete set, is described. Then follows a synthesis algorithm of a given ternary combinatorial network using T gate and based on decomposition theory.
Sensitivity of an eigenvector of a multivariable control system
- Author(s): D.C. Reddy
- Source: Electronics Letters, Volume 3, Issue 5, p. 205 –207
- DOI: 10.1049/el:19670160
- Type: Article
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In determining the sensitivity of response of a linear time-invariant dynamic system, extensive use is made of the concepts of eigenvalue and eigenvector sensitivity. In an earlier paper, a closed-form expression for the eigenvalue-sensitivity coefficient was obtained. The purpose of this article is to arrive at an elegant closed-form expression for the evaluation of eigen vector-sensitivity coefficients.
Limitations on the use of describing functions
- Author(s): D.E. Jeffers
- Source: Electronics Letters, Volume 3, Issue 5, p. 207 –208
- DOI: 10.1049/el:19670161
- Type: Article
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The describing-function method of analysis fails to predict the existence of a limit cycle when applied to a relay control system for a nuclear reactor. This is demonstrated by a direct solution of the system differential equations and by experiment on the Universities' Research Reactor.
Calculation of steady-state errors in digital-to-analogue ladder convertors
- Author(s): R.W. Donaldson and D. Chan
- Source: Electronics Letters, Volume 3, Issue 5, p. 208 –209
- DOI: 10.1049/el:19670162
- Type: Article
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A method for calculating least upper bounds on the magnitude and variance of the steady-state analogue voltage error in digital-to-analogue ladder convertors in presented. Tight bounds on the magnitude and variance of the error are calculated as a function of resistor tolerance, steady-state voltage source error and number of bits decoded.
Operation of field-effect transistors at liquid-helium temperature
- Author(s): C.G. Rogers and A.K. Jonscher
- Source: Electronics Letters, Volume 3, Issue 5, p. 210 –211
- DOI: 10.1049/el:19670163
- Type: Article
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D.C. operation of silicon m.o.s.t., devices of pchannel enhancement and nchannel depletion types at 4°K is described. The former has transfer and drain characteristics at 4°K which are substantially similar to those at room temperature. The latter has a nonlinear ID/VD characteristic. A large drain ‘threshold’ is found in a few devices and is traced to the absence of gate overlap with drain and source contacts.
Optimisation of the Zubov and Ingwerson methods for constructing Lyapunov functions
- Author(s): J.R. Hewit and C. Storey
- Source: Electronics Letters, Volume 3, Issue 5, p. 211 –213
- DOI: 10.1049/el:19670164
- Type: Article
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The Zubov and Ingwerson procedures for constructing Lyapunov functions depend upon an initial choice of some function of the state variables. A direct search procedure is described for obtaining the optimum function, and hence the Lyapunov function of an arbitrary order which gives the best estimate of the region of asymptotic stability. The method is illustrated by an example.
Failure mechanisms in Gunn diodes
- Author(s): B. Jeppsson and I. Marklund
- Source: Electronics Letters, Volume 3, Issue 5, p. 213 –214
- DOI: 10.1049/el:19670165
- Type: Article
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Observations on electrical properties of planar Gunn diodes and on failure mechanisms using Sn–Ag and In–Au contacts are reported. A conducting channel of Sn(In) is proved to be responsible for the final catastrophic failure. Excess heat is generated at the anode, where also the breakdown is observed to start. Mechanisms starting the breakdown (hole injection and combined ion drift and diffusion of impurities) are discussed.
Theoretical considerations of time delay for bias-field pulsing in y.i.g.
- Author(s): J.H. Collins and H.R. Zapp
- Source: Electronics Letters, Volume 3, Issue 5, p. 214 –217
- DOI: 10.1049/el:19670166
- Type: Article
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Theoretical calculations are performed which compliment experimental results achieved with bias-field pulsing of magnetoelastic waves propagating in yttrium-iron garnet. For the inhomogeneous magnetic field case, under the application of a maintained field step, the magnetoelastic régime is divided into five regions in order to investigate the properties of time delay, frequency translation, frequency modulation, pulse expansion, pulse inversion and pulse compression. The results for a field ramp applied to the spinwave régime are also evaluated.
Analogue multiplier using p–njunction capacitance
- Author(s): N. Racoveanu
- Source: Electronics Letters, Volume 3, Issue 5, p. 217 –218
- DOI: 10.1049/el:19670167
- Type: Article
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One input voltage of the multiplier acts upon the dynamic capacitance of a p-njunction. The other input voltage acts upon the frequency of a square-wave signal. During half a period of the square-wave signal, the current in the RC circuit decays exponentially to nearly zero. The detected current is proportional to the product of the input voltages. The limitations of the multiplier are the one-quadrant multiplier and the limited maximum frequency response.
Influence of interface states on the capacitance of homo- and heterojunctions
- Author(s): F. van de Wiele and R. van Overstraeten
- Source: Electronics Letters, Volume 3, Issue 5, p. 218 –220
- DOI: 10.1049/el:19670168
- Type: Article
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The difference between the calculated and the measured built-in voltage for homo- and heterojunctions is explained by introducing interface states in the vicinity of the metallurgical junction. A general formula is derived for the depletion-layer capacitance of abrupt junctions with interface states.
Simple method for determining minimum value of noise constant of tunnel diode
- Author(s): M. Rasiukiewicz
- Source: Electronics Letters, Volume 3, Issue 5, p. 220 –221
- DOI: 10.1049/el:19670169
- Type: Article
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A simple method for determining the minimum value of the noise constant of the tunnel diode is presented. It is shown that the minimum value of the noise constant always occurs beyond the inflection point of the I/V characteristic of the tunnel diode.
Coupled modes in a spherical resonator with a nonuniform impedance boundary
- Author(s): D.B. Large and J.R. Wait
- Source: Electronics Letters, Volume 3, Issue 5, p. 221 –223
- DOI: 10.1049/el:19670170
- Type: Article
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An analysis is presented for the modes which exist in a concentric spherical cavity resonator, the outer wall of which exhibits a surface impedance which is a smooth function of the polar angle. It is shown, in general, that the modes are coupled to one another. However, for special functional forms of the wall impedance, only a finite number of modes are coupled to one another.
Electron current density and electrostatic potential in a p–n-abrupt-junction diode as obtained by exact computer solution of the differential equations
- Author(s): M. Sánchez
- Source: Electronics Letters, Volume 3, Issue 5, p. 223 –224
- DOI: 10.1049/el:19670171
- Type: Article
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A computer solution for the current, continuity and Poisson's differential equations has been obtained for the forward steady-state behaviour of a one-dimensional abrupt p+–njunction germanium diode at zero and at low to high injection levels at 300°K. The numerical integration has been performed in and outside the space-charge layer of the p-njunction by using the Hall-Shockley-Read and the Auger recombination processes, and by eliminating the Boltzmann equilibrium approximation in the space-charge layer and the space-charge neutrality approximation in the quasineutral p and nregion. The numerical results for the electron-current density and the electrostatic potential distributions are given. The computed characteristic of the p-njunction is compared with experiment.
Transistorised total-lightning-flash counter
- Author(s): R.A. Barham
- Source: Electronics Letters, Volume 3, Issue 5, page: 225 –225
- DOI: 10.1049/el:19670172
- Type: Article
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A transistorised form of total-lightning-flash counter with a preset triggering sensitivity is described. The frequency response is similar to the WMO instrument for counting local lightning flashes. A particular feature is the extremely low standing current drain.
Erratum: Two-diode parametric amplifiers
- Author(s): W.S. Jones and F.J. Hyde
- Source: Electronics Letters, Volume 3, Issue 5, page: 226 –226
- DOI: 10.1049/el:19670173
- Type: Article
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Erratum: Inferential measurement of fluid flow from the cross-correlation of temperature fluctuations in the system
- Author(s): M.S. Beck and A. Plaskowski
- Source: Electronics Letters, Volume 3, Issue 5, page: 226 –226
- DOI: 10.1049/el:19670174
- Type: Article
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Erratum: On the derivative of the trace of a matrix quadratic form
- Author(s): P.W.U. Graefe and P.J. McLane
- Source: Electronics Letters, Volume 3, Issue 5, page: 226 –226
- DOI: 10.1049/el:19670175
- Type: Article
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