Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 25, Issue 21, 12 October 1989
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Volume 25, Issue 21
12 October 1989
Improved performance by optimised planar doped barrier launcher in GaAs vertical FET with very short channel width
- Author(s): Y.H. Won ; K. Yamasaki ; T. Daniels-Race ; P.J. Tasker ; W.J. Schaff ; L.F. Eastman
- Source: Electronics Letters, Volume 25, Issue 21, p. 1413 –1414
- DOI: 10.1049/el:19890943
- Type: Article
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The current–voltage characteristics of a GaAs vertical field effect transistor (VFET) with an n+ip+in+ planar doped barrier (PDB) launcher has been successfully improved by the optimisation of the launcher structure as well as the reduction of the channel width. Electron-beam direct writing has been used to obtain a small channel width of 0.1 ̃ 0.15 μm, resulting in good pinchoff characteristics. The measured maximum transconductances are 383 and 220 mS/mm at 77 and 300 K, respectively. In spite of a very short channel length (0.1 μm) and relatively low channel doping density (5 × 1016cm−3), a high voltage gain of 15 has been obtained.
High-performance balanced dual-detector GaAs IC receiver for 565 Mbit/s optical heterodyne detection
- Author(s): P.P. Smyth ; A.A. Sayles ; N.R. Back ; A.P. McDonna ; M.J. Creaner
- Source: Electronics Letters, Volume 25, Issue 21, p. 1414 –1416
- DOI: 10.1049/el:19890944
- Type: Article
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A high-performance balanced dual-detector receiver which uses a low-noise GaAs IC transimpedance preamplifier has been developed for a 565 Mbit/s optical fibre DPSK heterodyne system. This receiver has achieved the highest sensitivity reported at this bit rate: −51.9 dBm.
Unbalanced dissimilar-fibre Mach-Zehnder interferometer: application as filter
- Author(s): B. Malo ; F. Bilodeau ; K.O. Hill ; D.C. Johnson ; J. Albert
- Source: Electronics Letters, Volume 25, Issue 21, p. 1416 –1417
- DOI: 10.1049/el:19890945
- Type: Article
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An unbalanced Mach–Zehnder interferometer made using dissimilar-fibre fused taper couplers is proposed for filtering applications. The all-fibre device is compact, rugged, simple to make and provides extended control and flexibility for the design of various types of filters.
Picosecond optical pulse generation from mode-locked phased laser diode array
- Author(s): H. Masuda and A. Takada
- Source: Electronics Letters, Volume 25, Issue 21, p. 1418 –1419
- DOI: 10.1049/el:19890946
- Type: Article
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Actively mode-locked 26 ps optical pulses are generated from a gain-guided, 10-stripe, phased laser GaAs diode array with an external cavity consisting of two cylindrical lenses and a corner reflector. To our knowledge, this is the shortest pulse width yet demonstrated from a mode-locked phased laser diode array. The detuning bandwidth of the mode-locking is measured as 2.5 MHz.
Rectangular mode transformers in tapered single-mode fibres
- Author(s): C.D. Hussey ; T.A. Birks ; A.M. Wingfield ; A. Niu ; R. Kenny ; L. Dong
- Source: Electronics Letters, Volume 25, Issue 21, p. 1419 –1420
- DOI: 10.1049/el:19890947
- Type: Article
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A single-mode fibre, polished on both sides and subsequently tapered, yields a low-loss circular-to-rectangular mode transformer. This device should permit more efficient interconnection of circular fibres to rectangular integrated-optic and semiconductor waveguides.
Novel multioctave MMIC active isolator (1–20 GHz)
- Author(s): R. Pyndiah and F. van den Bogaart
- Source: Electronics Letters, Volume 25, Issue 21, p. 1420 –1422
- DOI: 10.1049/el:19890948
- Type: Article
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We present a multioctave MMIC active isolator (1–20 GHz) requiring only two fidd-effect transistors (MESFETs or HEMTs) and exhibiting more than 20 dB input return loss, 18 dB output return loss with more than 20 dB reverse loss and less than 9 dB transmission loss.
11.4 Gbit/s multiplexer IC employing submicron Si bipolar technology for use in future broadband telecommunications systems
- Author(s): M. Bagheri and W.S. Holden
- Source: Electronics Letters, Volume 25, Issue 21, p. 1422 –1424
- DOI: 10.1049/el:19890949
- Type: Article
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This letter presents an 11.4 Gbit/s, 2:1 multiplexer using a 0.6 μm wide, nonpolysilicon emitter Si bipolar technology. The chip measures 0.9 × 0.8 mm2, dissipates 350 mW with a 5V supply and operates at the fastest data rate reported for a multiplexer in any IC technology.
High-order bidirectional associative memory
- Author(s): H.-M. Tai ; C.-H. Wu ; T.-L. Jong
- Source: Electronics Letters, Volume 25, Issue 21, p. 1424 –1425
- DOI: 10.1049/el:19890950
- Type: Article
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A novel encoding scheme of a bidirectional associative memory (BAM) incorporating the high-order nonlinearity is proposed. This method significantly improves the storage capacity and error-correcting capability of the BAM.
Bit error rate floors in coherent optical systems with delay demodulation
- Author(s): G. Jacobsen ; B. Jensen ; I. Garrett ; J.B. Waite
- Source: Electronics Letters, Volume 25, Issue 21, p. 1425 –1427
- DOI: 10.1049/el:19890951
- Type: Article
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We report the results of an accurate analysis of the effect of filtering on phase noise, appropriate to coherent optical receivers with delay demodulation. Based on a numerical solution of a Fokker–Planck equation, we show that the phase at the output of the IF filter is very closely a Gaussian random process. The variance of phase fluctuations over a time equal to the integration time of the filter is reduced by a factor of 0.363. We show that receivers with minimum IF bandwidth can therefore operate with about 1.36 times the laser linewidth predicted disregarding the filtering effect We outline a route to analysing the performance of receivers with broader than optimum IF filters.
Novel hemispherical vertical cavity 1.3 μm surface-emitting laser on semi-insulating substrate
- Author(s): J.C. Ho ; P.K.L. Yu ; X.L. Jing ; E. Bradley†
- Source: Electronics Letters, Volume 25, Issue 21, p. 1427 –1428
- DOI: 10.1049/el:19890952
- Type: Article
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A vertical cavity GaInAsP/InP surface-emitting laser at 1.3 μm wavelength is demonstrated with a hemispherical cavity structure. The laser consists of a circular mesa buried (passivated) in polyimide and is made on a semi-insulating InP substrate. CW operation was obtained at 77 K with a threshold current density of 90 kA/cm2.
Optical set-reset operations of bistable laser diode with single-wavelength light
- Author(s): T. Odagawa and S. Yamakoshi
- Source: Electronics Letters, Volume 25, Issue 21, p. 1428 –1429
- DOI: 10.1049/el:19890953
- Type: Article
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Optical set–reset operations of a bistable laser diode are performed using two light signals which have the same wavelength but different intensities or pulse widths. The operations are based on optical pumping in the EL state and gain quenching in the lasing state by single-wavelength light.
High-strength carbon-coated optical fibre
- Author(s): N. Yoshizawa and Y. Katsuyama
- Source: Electronics Letters, Volume 25, Issue 21, p. 1429 –1431
- DOI: 10.1049/el:19890954
- Type: Article
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A carbon-coated optical fibre with 6.2 kgf failure strength and an n value of 670 is obtained for the first time. The carbon surface roughness was evaluated from STM images and a flat carbon coating was found to be essential in preventing the initial strength degradation of the fibre.
Novel semiconductor substrate for high-speed integrated circuit manufacture
- Author(s): Jianming Li
- Source: Electronics Letters, Volume 25, Issue 21, p. 1431 –1432
- DOI: 10.1049/el:19890955
- Type: Article
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High-resistivity layers formed beneath silicon surface layers by using proton implantation and annealing are described. Three-step annealing is suggested to form a buried layer of higher resistivity. Experiments show that the quality of the top layers has been improved, with an increase in surface mobility.
2-bit, chained, probabilistic encryption scheme
- Author(s): L. Harn and T. Kiesler
- Source: Electronics Letters, Volume 25, Issue 21, p. 1432 –1433
- DOI: 10.1049/el:19890956
- Type: Article
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In this letter we present a new probabilistic encryption algorithm based on the scheme proposed by Jingmin and Kaicheng in 1988. This algorithm utilises the public key concept and recursively encrypts two bits at a time. The message bit expansion is very low and is the same as in their scheme. At the same time, this new scheme is twice as fast.
Plasma-hydrogenated low-threshold wide-band 1.3 μm buried ridge structure laser
- Author(s): C. Kazmierski ; B. Theys ; B. Rose ; A. Mircea ; A. Jalil ; J. Chevallier
- Source: Electronics Letters, Volume 25, Issue 21, p. 1433 –1435
- DOI: 10.1049/el:19890957
- Type: Article
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The plasma hydrogenation of p-type InP has been applied to the fabrication of buried ridge structure (BRS) lasers. The threshold current, output power and modulation bandwidth of the obtained devices compare favourably with those of more conventional ones fabricated by proton implantation on the same wafer.
High-Q coplanar transmission line resonator of YBa2Cu3O7−x on LaAlO3
- Author(s): A.A. Valenzuela ; B. Daalmans ; B. Roas
- Source: Electronics Letters, Volume 25, Issue 21, p. 1435 –1436
- DOI: 10.1049/el:19890958
- Type: Article
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We report on quality factor measurements of a coplanar waveguide transmission line resonator patterned from a YBa2Cu3O7−x film on a LaAlO3 substrate, resonating at 6.5 GHz. At 77 K the unloaded quality factor is 3850 ± 180, that is about 43 times higher than that of an identical copper resonator at the same temperature and frequency. This result demonstrates the usefulness of LaAlO3 as a substrate for high-temperature superconducting microwave applications.
Incremental digital position encoder with error detection and correction
- Author(s): J.N. Ross and P.A. Taylor
- Source: Electronics Letters, Volume 25, Issue 21, p. 1436 –1437
- DOI: 10.1049/el:19890959
- Type: Article
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A digital position encoder is described which combines features of absolute and incremental encoders. A track encoded with a pseudorandom sequence provides absolute position information for an incremental encoder, allowing the detection and correction of errors, while requiring only two code tracks and four read heads.
Space diversity improvement factors for overwater path in New Zealand
- Author(s): W.E. Smith and M. Shafi
- Source: Electronics Letters, Volume 25, Issue 21, p. 1437 –1439
- DOI: 10.1049/el:19890960
- Type: Article
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Space diversity improvement factors for an overwater path in New Zealand are derived from field trial data and compared with predicted results. Improvement factors of about 50 were measured for single frequency fading, and those of about 30 were achieved for dispersive fading.
Disappearance of long-range ordering in Ga0.5In0.5P with tilting of substrate from (100) towards (511)A
- Author(s): S. Minagawa ; M. Kondow ; H. Kakibayashi
- Source: Electronics Letters, Volume 25, Issue 21, p. 1439 –1440
- DOI: 10.1049/el:19890961
- Type: Article
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Long-range ordering which exists in Ga0.5In0.5P grown on (100) GaAs substrates by metalorganic vapour-phase epitaxy is found to disappear by electron diffraction as the substrate orientation is tilted from (100) towards (511)A.
Temperature sensitivity of seeded second-harmonic generation in germanosilicate optical fibres
- Author(s): M.D. Selker and N.M. Lawandy
- Source: Electronics Letters, Volume 25, Issue 21, p. 1440 –1441
- DOI: 10.1049/el:19890962
- Type: Article
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To evaluate models for efficient second-harmonic generation based on charge transport by hopping, we have prepared fibres at 300 and 77 K. No significant differences in the evolution and conversion and efficiency were observed.
Optical performance of integrated 1.5 μm grating wavelength-demultiplexer on InP-based waveguide
- Author(s): M. Gibbon ; G.H.B. Thompson ; S.J. Clements ; D.J. Moule ; C.B. Rogers ; C.G. Cureton
- Source: Electronics Letters, Volume 25, Issue 21, p. 1441 –1442
- DOI: 10.1049/el:19890963
- Type: Article
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The performance of a monolithic spectrometer operating by total internal reflection of a slab-guided mode from vertical dry-etched mirrors is reported. Device outputs are almost diffraction-limited and exhibit a signal-to-noise ratio of 15–20 dB. Losses for the collimating mirrors and the grating are 2 and 2.5 dB, respectively.
Novel GaAs/AlGaAs guided-wave analogue/digital convertor
- Author(s): R.G. Walker ; I. Bennion ; A.C. Carter
- Source: Electronics Letters, Volume 25, Issue 21, p. 1443 –1444
- DOI: 10.1049/el:19890964
- Type: Article
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We describe a high-speed guided-wave electro-optic analogue/digital convertor, designed and implemented in GaAs/AlGaAs using a novel configuration. Error-free operation of a 4-bit device has been demonstrated.
Spectral linewidth of AlGaAs/GaAs surface-emitting laser
- Author(s): H. Tanobe ; F. Koyama ; K. Iga
- Source: Electronics Letters, Volume 25, Issue 21, p. 1444 –1446
- DOI: 10.1049/el:19890965
- Type: Article
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The spectral linewidth Δv of a vertical cavity surface-emitting laser was measured for the first time. The linewidth measured by a delayed self-homodyne method was 50 MHz at an output power of 1.4 mW under room-temperature CW operation. The linewidth we obtained was quite narrow in spite of the short cavity configuration of the SE laser. This narrow linewidth is attributed to the high-reflectivity mirrors. The measured linewidth is in good agreement with theoretical values.
Quartz resonator as sensor for viscous/conductive liquids
- Author(s): F. Josse ; Z.A. Shana ; D.E. Radtke ; U.R. Kelkar ; D.T. Haworth
- Source: Electronics Letters, Volume 25, Issue 21, p. 1446 –1447
- DOI: 10.1049/el:19890966
- Type: Article
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A theoretical and experimental study of an AT-cut quartz crystal resonator as a sensor for viscous conductive liquids has been performed. A novel continuous-flow cell system and an 11 MHz quartz crystal were used for the experiments. Results are presented for aqueous dilute solutions of potassium chloride (KCl) and potassium nitrate (KNO3).
500 mA AlGaAs/GaAs power heterojunction bipolar transistor
- Author(s): M.S. Ünlü ; G.B. Gao ; T. Won ; S.V. Iyer ; J. Chen ; H. Morkoç
- Source: Electronics Letters, Volume 25, Issue 21, p. 1447 –1449
- DOI: 10.1049/el:19890967
- Type: Article
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The current–voltage characteristics of 500 mA AlGaAs/GaAs power heterojunction bipolar transistors axe reported and the influence of case temperature on current handling capability and current gain are analysed. Current handling capabilities of 400–800 mA/mm per emitter periphery at different case temperatures have been successfully demonstrated using a low-doped GaAs layer as an emitter ballasting resistor to obtain a uniform current distribution over individual emitter fingers. A current gain of 50 at a collector current of 500 mA was realised at room temperature for three elementary devices bonded in parallel, each device comprised ten (5 × 25 μm2) emitter fingers.
Reliable 1.5 μm buried heterostructure, separate confinement, multiple quantum well (BH-SC-MQW) lasers entirely grown by metalorganic vapour-phase epitaxy (MOVPE)
- Author(s): C.P. Seltzer ; A.L. Burness ; M. Stevenson ; M.J. Harlow ; D.M. Cooper ; R.M. Redstall ; P.C. Spurdens
- Source: Electronics Letters, Volume 25, Issue 21, p. 1449 –1451
- DOI: 10.1049/el:19890968
- Type: Article
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We report the first reliable BH-SC-MQW semiconductor lasers in the GaInAsP quaternary system grown entirely by MOVPE. Threshold currents were as low as 10 mA with differential efficiencies of 0.18 mW/mA per facet at 20°C for 250 μm-long devices. A characteristic temperature of 49 K was measured for a 300 μm-long laser. Initial reliability data suggest these lasers should have lifetimes comparable to standard BH lasers.
Experimental demonstration of wavelength routed optical networks over 52 km of monomode optical fibre
- Author(s): P.J. Chidgey and G.R. Hill
- Source: Electronics Letters, Volume 25, Issue 21, p. 1451 –1452
- DOI: 10.1049/el:19890969
- Type: Article
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A wavelength routed network using commercial components in the 1.5 μm transmission window at 650 Mbit/s over 52 km of conventional monomode fibre is demonstrated. Individual and concatenated wavelength division multiplexer characteristics are presented.
Performance of dual-channel R-VT-CSMA for packet voice/data in local area network
- Author(s): A.D. Malyan and R.L. Brewster
- Source: Electronics Letters, Volume 25, Issue 21, p. 1452 –1454
- DOI: 10.1049/el:19890970
- Type: Article
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An extension of the reservation virtual time CSMA (R-VT-CSMA) protocol which is used for packet voice in broadcast networks is presented. The available bandwidth is split into a narrowband signalling channel and a wideband message channel. The advantage of this architecture is that contention resolution is performed in parallel with packet transmission. This results in a significant improvement in throughput.
Asymmetric planar doped barrier diodes for mixer and detector applications
- Author(s): M.J. Kearney ; M.J. Kelly ; R.A. Davies ; T.M. Kerr ; P.K. Rees ; A. Condie ; I. Dale
- Source: Electronics Letters, Volume 25, Issue 21, p. 1454 –1456
- DOI: 10.1049/el:19890971
- Type: Article
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We verify physical arguments which suggest that carefully designed, asymmetric, planar doped barrier diodes are capable of performing at least as well as conventional Schottky diodes in low-frequency mixer and detector applications.
Wideband fibre-optic delay network for phased array antenna steering
- Author(s): W. Ng ; A. Walston ; G. Tangonan ; I. Newberg ; J.J. Lee
- Source: Electronics Letters, Volume 25, Issue 21, p. 1456 –1457
- DOI: 10.1049/el:19890972
- Type: Article
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A 3-bit fibre-optic delay network with linear differential insertion phase from 1 to 11 GHz was demonstrated. Discrete delay increments specified by the steering angle of the phased array antenna were implemented by switching the bias currents of high-speed 1·3 μm laser diodes pigtailed to the delay lines.
High-density WDM systems using post-transmitter fibre Raman amplifier to relax Raman crosstalk limitation
- Author(s): M.-S. Kao and J. Wu
- Source: Electronics Letters, Volume 25, Issue 21, p. 1457 –1459
- DOI: 10.1049/el:19890973
- Type: Article
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The limitation of transmission distance imposed by Raman crosstalk in a high-density WDM system is numerically analysed. We introduce a post-transmitter fibre Raman amplifier to relax this limitation. The examples show that the limitation can be relaxed by 7 dB and 15 dB amplifier gain is obtainable. In addition, a much lower transmitted power level can be used to obtain the maximum transmission distance.
SBS threshold dependence on line coding in phase-modulated coherent optical systems
- Author(s): A. Cosentino and E. Iannone
- Source: Electronics Letters, Volume 25, Issue 21, p. 1459 –1460
- DOI: 10.1049/el:19890974
- Type: Article
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In this letter the dependence of the stimulated Brillouin threshold on the adopted line code in phase-modulated coherent optical systems is studied considering some of the most common line codes.
Electrical studies of tellurium films
- Author(s): R. Swan ; A.K. Ray ; C.A. Hogarth ; D. Mukherjee
- Source: Electronics Letters, Volume 25, Issue 21, p. 1460 –1462
- DOI: 10.1049/el:19890975
- Type: Article
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In situ DC measurements made on 50nm-thick tellurium films sandwiched between copper electrodes show an existence of ohmic contacts at the metal/semiconductor interface. Conduction in the polycrystalline film at higher fields is believed to be due to space-charge-limited current flow.
GaInAs camel transistors grown by MOCVD
- Author(s): M. Marso ; G. Zwinge ; H. Beneking
- Source: Electronics Letters, Volume 25, Issue 21, p. 1462 –1463
- DOI: 10.1049/el:19890976
- Type: Article
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Hot electron camel transistors have been fabricated for the first time in GaInAs. The camel structures were grown by MOCVD. The thickness of the base layer is 40 nm, the emitter barrier height is 0·55 eV, the collector barrier height is 0·25 eV, and the base transport factor is 0·6 at room temperature.
DC–12·3 GHz broadband amplifier
- Author(s): J. Kahlert ; W. Piscalar ; N. Mulombe
- Source: Electronics Letters, Volume 25, Issue 21, p. 1463 –1465
- DOI: 10.1049/el:19890977
- Type: Article
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A DC-coupled broadband amplifier concept called automatic-bias-control is realised. A two-stage amplifier using a GaAs MESFET is built up in a hybrid-integrated circuit with a gain-bandwidth product of 40 GHz and a risetime of 28 ps.
7.7 Gbit/s benchtop regenerator
- Author(s): O. Mizuhara ; K.-S. Park ; S.-Y. Chai ; J.A. Nagel
- Source: Electronics Letters, Volume 25, Issue 21, p. 1465 –1466
- DOI: 10.1049/el:19890978
- Type: Article
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A ‘benchtop’ 7·7 Gbit/s regenerator was designed to achieve optical transmission through 43 km of fibre. For the first time full regenerator functions, including clock extraction and reclocked outputs, were employed in the 8 Gbit/s range
Improving code rate of McEliece's public-key cryptosystem
- Author(s): C.S. Park
- Source: Electronics Letters, Volume 25, Issue 21, p. 1466 –1467
- DOI: 10.1049/el:19890979
- Type: Article
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A method of improving a code rate of McEliece's public-key cryptosystem is presented. Some information bits are mapped into an artificial error vector to be added to a code-word. The number of information bits is increased by the number of total possible error vectors whose weight is fixed.
Comment: Biased model reduction by simplified Routh approximation method
- Author(s): T.N. Lucas
- Source: Electronics Letters, Volume 25, Issue 21, p. 1467 –1468
- DOI: 10.1049/el:19890980
- Type: Article
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Erratum: Adjustable bidirectional MOS current mirror/amplifier
- Author(s): Z. Wang and W. Guggenbühl
- Source: Electronics Letters, Volume 25, Issue 21, page: 1468 –1468
- DOI: 10.1049/el:19890981
- Type: Article
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Erratum: Method of regularisation for inverse of convolution of finite-length sequences
- Author(s): A. Dyka
- Source: Electronics Letters, Volume 25, Issue 21, page: 1468 –1468
- DOI: 10.1049/el:19890982
- Type: Article
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Erratum: Parameter evaluation of adapter from banana plugs to coaxial connector at MHz frequencies
- Author(s): U. Stumper
- Source: Electronics Letters, Volume 25, Issue 21, page: 1468 –1468
- DOI: 10.1049/el:19890983
- Type: Article
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Erratum: Novel approach to reduce number of op-amps in switched-capacitor filters
- Author(s): J.Z. Zhou
- Source: Electronics Letters, Volume 25, Issue 21, page: 1468 –1468
- DOI: 10.1049/el:19890984
- Type: Article
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