Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 25, Issue 18, 31 August 1989
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Volume 25, Issue 18
31 August 1989
Triple layer refractive index profile for tapered fibre beam expanders
- Author(s): S. Tammela ; P. Pöyhönen ; A. Tervonen
- Source: Electronics Letters, Volume 25, Issue 18, p. 1205 –1206
- DOI: 10.1049/el:19890808
- Type: Article
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In the letter a three-layer index profile for a tapered fibre beam expander is presented. It is shown that both the size and ellipticity of the modal field can be changed simultaneously by using a proper index profile.
All-fibre frequency shifter using piezoceramic SAW device
- Author(s): P.A. Greenhalgh ; A.P. Foord ; P.A. da Vies
- Source: Electronics Letters, Volume 25, Issue 18, p. 1206 –1207
- DOI: 10.1049/el:19890809
- Type: Article
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An all-fibre frequency shifter operating at 3 MHz is described. The device was based on a SAW structure using interdigital transducers on a PZT4 ceramic substrate. Carrier and sideband suppression were 29 and 35 dB, respectively, with 4.5% of the input optical power shifted for an electrical drive of 2 W.
AuGe/Au ohmic contacts to n-type InP by hot-plate alloying
- Author(s): S.C. Binari and J.B. Boos
- Source: Electronics Letters, Volume 25, Issue 18, p. 1207 –1209
- DOI: 10.1049/el:19890810
- Type: Article
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We report on the fabrication and characteristics of AuGe/Au ohmic contacts to ion-implanted n-type InP. The contacts have smooth surface morphology, excellent adhesion and good contact resistance uniformity. For samples with carrier concentrations of 1.7×1017 and 1.6×1015cm−3, contact resistances of 0.07 and 0.03 Ωmm, respectively, have been obtained. These values are among the lowest contact resistances reported for n-type InP.
Leaky-wave multiple dichroic beam formers
- Author(s): J.R. James ; S.J.A. Kinany ; P.D. Peel ; G. Andrasic
- Source: Electronics Letters, Volume 25, Issue 18, p. 1209 –1211
- DOI: 10.1049/el:19890811
- Type: Article
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The beamforming action of three planar frequency-selective surfaces (FSSs) placed in front of a waveguide aperture in a ground plane is demonstrated experimentally, together with the application to printed antennas. A simple ray theory illustrates the leaky-wave action for one FSS in position and the advantages and disadvantages of this beamforming technique are noted.
AlGaAs/GaAs emitter-down HBT fabricated by MBE overgrowth
- Author(s): D.L. Plumton ; H.D. Shih ; F.J. Morris
- Source: Electronics Letters, Volume 25, Issue 18, p. 1211 –1212
- DOI: 10.1049/el:19890812
- Type: Article
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A planar emitter-down AlGaAs/GaAs heterojunction bipolar transistor, has been fabricated by a molecular beam epitaxy overgrowth of the n-GaAs collector on top of the base layer after the base layer was formed by beryllium implantation and rapid thermal annealing. The emitter down transistors fabricated by this process had DC current gains of 20 , and ring oscillators gave a maximum switching speed of 250ps/gate.
Improvement of optical nonlinear response in GaAs/AlGaAs nipi-MQW structure with Au ohmic contact
- Author(s): H. Ando ; H. Oohashi ; H. Iwamura ; H. Kanbe
- Source: Electronics Letters, Volume 25, Issue 18, p. 1212 –1214
- DOI: 10.1049/el:19890813
- Type: Article
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Experiments demonstrate that the optical nonlinear response in a GaAs/AlGaAs nipi-MQW structure can be improved by introducing ohmic contacts, which electrically connect n and p-layers. The response time is reduced by more than two orders of magnitude because of the enhanced recombination rate of photoexcited carriers, whereas the figure of merit for absorptive nonlinearity δeh is kept constant and is an order of magnitude larger than that in a conventional GaAs/AlGaAs MQW structure.
Fusion splicing of heavy metal fluoride glass optical fibres
- Author(s): B.B. Harbison ; W.I. Roberts ; I.D. Aggarwal
- Source: Electronics Letters, Volume 25, Issue 18, p. 1214 –1216
- DOI: 10.1049/el:19890814
- Type: Article
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Heavy metal fluoride (HMF) glass optical fibres were spliced by fusing the two ends of fibres using a DC arc. An average optical loss of 0.08 dB per splice and strengths of up to 600 M Pa were achieved for fusion splices using an inert gas purge during splicing. Estimates are made to determine the feasibility of achieving a splice loss of 0.005dB for singlemode (HMF) fibres.
Analogue implementation of Hough transform
- Author(s): D. Ben-Tzvi and M. Sandler
- Source: Electronics Letters, Volume 25, Issue 18, p. 1216 –1217
- DOI: 10.1049/el:19890815
- Type: Article
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In digital implementations of the Hough transform either digital multiplication or table look-up are used in calculations. Equivalent results may be obtained using an analogue representation. Each edge point in the image is used to generate a signal representing the continuous form of the Hough transform for that point. The signal is sampled at regular intervals to provide a discrete sequence of values. It has been shown that such an analogue implementation achieves a significantly better throughput than an equivalent digital implementation. The designed circuit may be integrated as a one-chip hybrid integrated circuit.
Dual-loop slot antenna with simple feed
- Author(s): K. Hirose and H. Nakano
- Source: Electronics Letters, Volume 25, Issue 18, p. 1218 –1219
- DOI: 10.1049/el:19890816
- Type: Article
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A dual-loop slot antenna consisting of two identical loops fed by a triplate line is proposed. It is experimentally demonstrated that the antenna radiates a unidirectional beam of linear polarisation. It is also shown that the generation of a circularly polarised wave is possible by adding perturbation elements to the loops.
Continuum-miniband superlattice-base transistor with graded-gap electron injector
- Author(s): F. Beltram ; F. Capasso ; A.L. Hutchinson ; R.J. Malik
- Source: Electronics Letters, Volume 25, Issue 18, p. 1219 –1220
- DOI: 10.1049/el:19890817
- Type: Article
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A new superlattice-base unipolar transistor is reported. Electrons are injected via a graded-gap emitter into a miniband lying above the top of the barriers. By controlling the emitter-base voltage, strong quantum reflections from the minigaps and the associated negative transconductance are induced.
Thermal CVD of homoepitaxial diamond using CF4 and F2
- Author(s): R.A. Rudder ; J.B. Posthill ; R.J. Markunas
- Source: Electronics Letters, Volume 25, Issue 18, p. 1220 –1221
- DOI: 10.1049/el:19890818
- Type: Article
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For the first time, diamond has been grown using low-pressure thermal CVD. No additional excitation such as plasmas or filaments was used. The letter reports the homoepitaxial growth of diamond on type II-A diamond(100) via pyrolysis in a CF4/F2 gas mixture. The fluorine in the process is analogous to the atomic hydrogen in traditional plasma or filament assisted CVD processes in that it serves as an etchant to remove the nondiamond components from the depositing carbon film.
Te-to-tm mode conversion in GaAs/AlGaAs superlattice waveguide
- Author(s): T. Wolf ; C.L. Shieh ; R. Engelmann ; K. Alavi ; J. Mantz
- Source: Electronics Letters, Volume 25, Issue 18, p. 1221 –1223
- DOI: 10.1049/el:19890819
- Type: Article
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Intrinsic phase matching between a TE and a TM mode is obtained in a GaAs/AlGaAs superlattice waveguide, fabricated by Zn diffusion induced disordering, as a result of the birefringent waveguiding properties of the superlattice in combination with a proper choice of the waveguide geometry. As a consequence, up to 90% polarisation conversion is demonstrated without the application of phase matching techniques.
Decoding Reed-Solomon codes generated by any generator polynomial
- Author(s): Y.R. Shayan and T. Le-Ngoc
- Source: Electronics Letters, Volume 25, Issue 18, p. 1223 –1224
- DOI: 10.1049/el:19890820
- Type: Article
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A Reed-Solomon code can be generated by n = 2m − 1 different generator polynomials, where 2m is the size of the field. In the letter a structure for a Reed-Solomon decoder is introduced which can decode a Reed-Solomon code generated by any generator polynomial.
Modelling interconnect yield in reconfigurable circuits
- Author(s): P.D. Franzon
- Source: Electronics Letters, Volume 25, Issue 18, p. 1225 –1226
- DOI: 10.1049/el:19890821
- Type: Article
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Reconfigurable interconnect is required to implement defecttolerant circuits. The impact of this wiring on yield is usually either ignored or overstated. A method is presented here that allows the determination of the yield impact of the interconnect in reconfigurable circuits through the expanded use of critical area parameters.
Critical thickness in strained-layer GaInAs/GaAs quantum well lasers
- Author(s): J. Mantz ; C. Shieh ; H. Lee ; D. Ackley ; R. Engelmann
- Source: Electronics Letters, Volume 25, Issue 18, p. 1226 –1228
- DOI: 10.1049/el:19890822
- Type: Article
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The critical thickness in strained-layer GalnAs/GaAs quantum well lasers was studied by measuring the dependence of the threshold current on the number of quantum wells. The critical thickness for 20% In composition was found to be around 30 nm, which is twice as large as predicted by the Matthews-Blakeslee model.
Narrowband planar microwave active filter
- Author(s): C.Y. Chang and T. Itoh
- Source: Electronics Letters, Volume 25, Issue 18, p. 1228 –1229
- DOI: 10.1049/el:19890823
- Type: Article
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A new circuit design for narrowband microwave active filters is presented in the letter. By increasing the tank circuit unloaded Q-value an ideal one-section bandpass filter is realised.
Transmission line analysis of aperture-coupled microstrip antenna
- Author(s): M. Himdi ; J.P. Daniel ; C. Terret
- Source: Electronics Letters, Volume 25, Issue 18, p. 1229 –1230
- DOI: 10.1049/el:19890824
- Type: Article
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The letter presents an original analysis of a slot-coupled microstrip antenna. The transmission line model uses previous expressions of conductance and susceptance due to the fringing fields near the edges of the patch; moreover, a simple interpretation of the different impedance transformations is given. Resullts based on the transmission line model are compared with other theoretical analyses (cavity model, moment method) and measurements.
Scattering loss from rough sidewalls in semiconductor rib waveguides
- Author(s): M.S. Stern ; P.C. Kendall ; R.C. Hewson-Browne ; P.N. Robson ; D.A. Quinney
- Source: Electronics Letters, Volume 25, Issue 18, p. 1231 –1232
- DOI: 10.1049/el:19890825
- Type: Article
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A new scattering formula is applied to the slab loaded rib waveguide. Rib corrugations of up to 50 nm in amplitude lead to losses of the order of a few dB/cm, with trends which agree with experiment
Broadband stacked dielectric resonator antennas
- Author(s): A.A. Kishk ; B. Ahn ; D. Kajfez
- Source: Electronics Letters, Volume 25, Issue 18, p. 1232 –1233
- DOI: 10.1049/el:19890826
- Type: Article
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The input impedance of stacked cylindrical dielectric resonator antennas is investigated experimentally. The dielectric resonators are made of different materials. The bandwidth of 25% has been observed for a standing wave ratio better than 2.
Dependence of transconductance on substrate bias in ultrathin silicon-on-insulator MOS transistors
- Author(s): J.C. Sturm and K. Tokunaga
- Source: Electronics Letters, Volume 25, Issue 18, p. 1233 –1234
- DOI: 10.1049/el:19890827
- Type: Article
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A simple model is presented to explain the dependence of the transconductance on the substrate bias in ultrathin silicon-on-insulator MOS transistors. Good agreement with experimental data is found. The model can also be used to predict the dependence of transconductance on the underlying oxide thickness.
Stabilisation of optically excited self-oscillation
- Author(s): L.M. Zhang ; D. Uttamchandani ; B. Culshaw
- Source: Electronics Letters, Volume 25, Issue 18, p. 1235 –1236
- DOI: 10.1049/el:19890828
- Type: Article
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A new experiment demonstrating the stabilisation of an optically driven self-oscillator is reported. The oscillation of the micromechanical silicon resonator is maintained by optical feedback provided by a Fabry-Perot interferometer formed between a semireflecting mirror and the surface of the silicon micromechanical resonator. The stabilisation of the oscillation is achieved by adjusting the frequency of the laser diode powering the system.
Coherent detection of stimulated Brillouin backscatter on photoconductive three-wave mixer for sensing applications
- Author(s): J.K.A. Everard and R. Thomas
- Source: Electronics Letters, Volume 25, Issue 18, p. 1236 –1237
- DOI: 10.1049/el:19890829
- Type: Article
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We describe the coherent detection of stimulated Brillouin scattering (SBS) from an optical fibre, using an InP photoconductive three-wave mixer. In this mixer two optical signals offset by 33 GHz are multiplied together with a microwave signal, all within the same device, to produce an output signal of a few hundred MHz. This arrangement could be used to measure the temperature distribution along a fibre.
Dynamic modelling of nonlinear microwave devices
- Author(s): I. Smith
- Source: Electronics Letters, Volume 25, Issue 18, p. 1237 –1239
- DOI: 10.1049/el:19890830
- Type: Article
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An improved technique is presented here for modelling the dynamic, large-signal properties of microwave devices such as GaAs MESFETs. The method is based on repeated harmonic balance analysis of a simple nonlinear circuit. Many of the sources of inconsistency in established modelling methods have been avoided, making more reliable circuit analysis possible.
High-power (1 W, CW) single-lobe operation of LPE-grown GaInAsP/GaInP (x = 0.8 μm) separate-confinement single-quantum-well broad-area lasers
- Author(s): D.Z. Garbuzov ; A.V. Kochergin ; E.U. Rafailov ; N.A. Strugov ; P. Gavrilovic
- Source: Electronics Letters, Volume 25, Issue 18, p. 1239 –1240
- DOI: 10.1049/el:19890831
- Type: Article
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Liquid-phase epitaxy was used to grow single-quantum-well separate-confinement laser structures with a GaInAsP active layer. Broad-area devices with 100μm-wide stripes that were fabricated from these structures emit over 1 W of optical power per facet at a wavelength of 0.8 μm in continuous room-temperature operation. A stable single-lobed far-field pattern with a beam divergence as low as 0.6° is obtained in pulsed operation.
1.5μm band travelling-wave semiconductor optical amplifiers with window facet structure
- Author(s): I. Cha ; M. Kitamura ; H. Honmou ; I. Mito
- Source: Electronics Letters, Volume 25, Issue 18, p. 1241 –1242
- DOI: 10.1049/el:19890832
- Type: Article
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1.5μ band travelling-wave semiconductor optical amplifiers (TWAs), characterised by their window facet structure and symmetrised active waveguide, have been developed. 1.5 dB spectral gain ripple and 1.3 dB TE-TM mode gain difference at 22 dB signal gain were achieved simultaneously. An average facet reflectivity as low as 0.06% was estimated.
6–34 GHz offset phase-locking of Nd:YAG 1319 nm nonplanar ring lasers
- Author(s): K.J. Williams ; L. Goldberg ; R.D. Esman ; M. Dagenais ; J.F. Weller
- Source: Electronics Letters, Volume 25, Issue 18, p. 1242 –1243
- DOI: 10.1049/el:19890833
- Type: Article
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We report offset phase-locking of two Nd:YAG nonplanar ring lasers by electronic feedback. The difference frequency is continuously tunable in three bands from 6 to 34 GHz and exhibits a hold-in range and linewidth of 82 MHz and <1 mHz, respectively.
Characteristic temperature of GaInP/AlGaInP single quantum well lasers
- Author(s): D.P. Bour ; N.W. Carlson ; G.A. Evans
- Source: Electronics Letters, Volume 25, Issue 18, p. 1243 –1245
- DOI: 10.1049/el:19890834
- Type: Article
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The characteristic temperature To of AlgaInp quantum well lasers is measured. To values fall between 50 and 70 K, with only a slight decrease for short-cavity devices, suggesting the insignificance of Auger recombination in these high-bandgap alloys. The low To values are likely to be due to the weak carrier confinement afforded by the structure.
High-speed AlGaAs/GaAs multiple quantum well ridge waveguide lasers
- Author(s): H.D. Wolf ; H. Lang ; L. Korte
- Source: Electronics Letters, Volume 25, Issue 18, p. 1245 –1246
- DOI: 10.1049/el:19890835
- Type: Article
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High bandwidths (up to 14GHz) and relaxation frequencies (up to 36 GHz) have been measured for multiple quantum well ridge waveguide lasers. The single-mode optical spectra under CW operation remain nearly unchanged under highspeed modulation with up to 70% modulation depth.
Generation of 2 THz repetition rate pulse trains through induced modulational instability
- Author(s): E.J. Greer ; D.M. Patrick ; P.G.J. Wigley ; J.R. Taylor
- Source: Electronics Letters, Volume 25, Issue 18, p. 1246 –1248
- DOI: 10.1049/el:19890836
- Type: Article
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Trains of 130 fs pulses at 2 THz repetition rates have been generated through induced modulational instability in a single-mode fibre from an anti-Stokes CW diode laser signal on a carrier frequency provided by a mode-locked Nd:YAG laser
Design of core support mechanism for mm-wave dielectrically loaded horn
- Author(s): R. Cahill
- Source: Electronics Letters, Volume 25, Issue 18, p. 1248 –1249
- DOI: 10.1049/el:19890837
- Type: Article
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A practical design for supporting the inner core of a mm-wave dielectric loaded horn is described. It is shown that a good input impedance match, excellent radiation characteristics and high mechanical strength are attainable.
Multistage self-excited linear predictive speech coder
- Author(s): J.I. Lee and C.K. Un
- Source: Electronics Letters, Volume 25, Issue 18, p. 1249 –1251
- DOI: 10.1049/el:19890838
- Type: Article
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We present an approach to low-rate speech coding based on multistage self-excited linear prediction (SELP). The coder has much lower complexity than a code-excited linear prediction (CELP) coder, but yields comparable output speech quality at the same transmission rate. In the proposed multistage SELP coder, the long-term predictor is modified to model better the onset of a voiced section of speech or voice with high pitch.
Accurate current conveyor integrated circuit
- Author(s): D.C. Wadsworth
- Source: Electronics Letters, Volume 25, Issue 18, p. 1251 –1253
- DOI: 10.1049/el:19890839
- Type: Article
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An integrated circuit implementation of a novel current conveyor topology is described. The IC offers significantly improved performance in the areas of accuracy, frequency bandwidth, transient response, output impedance and distortion due to an innovative connection of Wilson current mirrors and fabrication on a complementary npn-pnp bipolar process.
Quasi-TEM spectral domain analysis of thick microstrip for microwave and digital integrated circuits
- Author(s): V.K. Tripathi ; R.T. Kollipara ; L.A. Hayden
- Source: Electronics Letters, Volume 25, Issue 18, p. 1253 –1254
- DOI: 10.1049/el:19890840
- Type: Article
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A procedure to compute the effective dielectric constants and characteristic impedances of thick microstrip is formulated utilising the computationally efficient quasi-TEM spectral domain method. The results calculated for the impedance and effective dielectric constant are shown to agree well with those obtained by the integral equation and finite element methods. The decrease in the effective dielectric constant of a microstrip as a function of strip thickness is also shown to agree well with the measured data.
Fresnel equation studies of longitudinally varying semiconductor rib waveguides: reference wavevector dependence
- Author(s): D. Yevick ; C. Rolland ; B. Hermansson
- Source: Electronics Letters, Volume 25, Issue 18, p. 1254 –1256
- DOI: 10.1049/el:19890841
- Type: Article
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We demonstrate that the accuracy of paraxial loss calculations for longitudinally varying semiconductor rib waveguides is significantly affected by the value assumed for the reference refractive index, n0. We then perform a full threedimensional simulation of a weakly guiding single-mode rib waveguide Y-junction, and compare our results to those of the effective index method, obtaining excellent agreement when n0 nearly coincides with the refractive index of the guided mode.
Analysis of strongly guiding rib waveguide S-bends: theory and experiment
- Author(s): C. Rolland ; G. Mak ; K.E. Fox ; D.M. Adams ; A.J. Springthorpe ; D. Yevick ; B. Hermansson
- Source: Electronics Letters, Volume 25, Issue 18, p. 1256 –1257
- DOI: 10.1049/el:19890842
- Type: Article
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We have measured the losses associated with strongly confined GaAs/AlGaAs rib waveguide S-bent structures and obtained excellent agreement with a full three-dimensional numerical simulation based on the beam propagation method.
Epitaxial growth on InP substrates etched with methane reactive ion etching technique
- Author(s): L. Henry ; C. Vaudry ; A. le Corre ; D. Lecrosnier ; P. Alnot ; J. Olivier
- Source: Electronics Letters, Volume 25, Issue 18, p. 1257 –1259
- DOI: 10.1049/el:19890843
- Type: Article
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InP substrates have been etched by RIE using a mixture of methane, argon and hydrogen. With angle-resolved photoelectron spectroscopy, we show that, after etching, a nonstoichiometric layer is created at the surface: this layer is phosphorus depleted and extends to a thickness varying from 10 to 40 Å according to the RIE conditions. We demonstrate that a heat treatment under P2 atoms is able to restore the surface crystallinity and permits the growth of high-quality epilayers.
Novel approach to reduce number of op-amps in switched-capacitor filters
- Author(s): J.Z. Zhou
- Source: Electronics Letters, Volume 25, Issue 18, p. 1259 –1260
- DOI: 10.1049/el:19890844
- Type: Article
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A second-order Z-domain admittance is introduced to reduce the number of op-amps in switched-capacitor filters, which also reduces the total capacitance and the number of switches. Experimental results are in agreement with theory.
8×8 element hybridised PLZT/silicon spatial light modulator array
- Author(s): M.J. Goodwin ; C.J.G. Kirkby ; A.D. Parsons ; I. Bennion ; W.J. Stewart
- Source: Electronics Letters, Volume 25, Issue 18, p. 1260 –1262
- DOI: 10.1049/el:19890845
- Type: Article
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The design, fabrication and preliminary characterisation of a novel hybridised silicon/PLZT electro-optic spatial light modulator are reported. Modulation in excess of 10 dB is achieved at a drive of 30 V, with a response time less than 5 μs in a 64-element array.
Algorithm for squaring in GF(2m) in standard basis
- Author(s): M. Piontas
- Source: Electronics Letters, Volume 25, Issue 18, p. 1262 –1263
- DOI: 10.1049/el:19890846
- Type: Article
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The letter presents an effective algorithm for squaring in Galois fields in standard basis without multiplication. The hardware realisation of this algorithm can be used for performing exponentiation with a variable base of power.
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54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article