Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 24, Issue 4, 18 February 1988
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Volume 24, Issue 4
18 February 1988
Interferometric optical fibre sensors using internal mirrors
- Author(s): C.E. Lee and H.F. Taylor
- Source: Electronics Letters, Volume 24, Issue 4, p. 193 –194
- DOI: 10.1049/el:19880128
- Type: Article
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Reflectively monitored Fabry-Perot interferometers which make use of dielectric mirrors in continuous lengths of single mode fibre are characterised for use as temperature and wavelength sensors.
Optimisation of signal/clutter ratio using polarisation diversity
- Author(s): S.R. Cloude
- Source: Electronics Letters, Volume 24, Issue 4, p. 194 –195
- DOI: 10.1049/el:19880129
- Type: Article
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In the letter we consider criteria of use in formulating functionals for optimisation of polarisation-dependent backscatter from radar targets. By employing the total backscattered power as a parameter, we show that optimisation of signal/clutter may be developed via partial knowledge of the average coherency matrices of targets and clutter.
Optimum design of FIR switched-capacitor decimators using low-gain amplifiers
- Author(s): V.F. Dias and J.E. Franca
- Source: Electronics Letters, Volume 24, Issue 4, p. 195 –197
- DOI: 10.1049/el:19880130
- Type: Article
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Strategies are presented for the optimum design of FIR switched-capacitor decimators using low-gain amplifiers. It is illustrated that one such new design improves the amplitude response of an existing circuit when the DC gain of the amplifiers is as low as 100.
Linewidth of monolithic external cavity DFB lasers
- Author(s): J. Buus
- Source: Electronics Letters, Volume 24, Issue 4, p. 197 –198
- DOI: 10.1049/el:19880131
- Type: Article
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An expression for the linewidth of DFB lasers with lossy external cavities is derived. The influence of facet reflectivity and high feedback levels is discussed.
Analysis of Hg1−xCdxSe alloys in electroreflectance
- Author(s): Shaohua Liang and Debao Hu
- Source: Electronics Letters, Volume 24, Issue 4, p. 198 –199
- DOI: 10.1049/el:19880132
- Type: Article
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An electrolyte electroreflectance study on Hg1−xCdxSe alloy films is first reported. The critical point energies E0 and E1 are obtained for different CdSe composition samples and material homogeneities are also discussed.
150 Mbit/s phase diversity ASK homodyne receiver with a linewidth/bit rate ratio of 0.5
- Author(s): R. Welter and L.G. Kazovsky
- Source: Electronics Letters, Volume 24, Issue 4, p. 199 –201
- DOI: 10.1049/el:19880133
- Type: Article
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A 150 Mbit/s ASK phase-diversity homodyne receiver was constructed with a DFB laser emitting at 1550 nm. At a BER of 10−9, a sensitivity of −55 dBm, corresponding to 77 photoelectrons/bit, was measured.
Adaptive image restoration of sigma filter using local statistics and human visual characteristics
- Author(s): S.-H. Jung and N.-C. Kim
- Source: Electronics Letters, Volume 24, Issue 4, p. 201 –202
- DOI: 10.1049/el:19880134
- Type: Article
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The sigma filter is a nonlinear scheme for modifying an average (mean) filter to improve its edge-preserving characteristic. However, this filter is susceptible to impulsive noise, such as BSC (binary symmetric channel) noise. In this letter, a simple adaptive algorithm for a sigma filter is presented using local image statistics and human visual characteristics to compensate for its drawbacks. Experimental results for an image degraded by BSC noise show that the proposed algorithm has much better performance than nonadaptive ones both on SNR gain and on subjective image quality.
Spike-free biphase switched-capacitor integrator pair with low sensitivity to nonideal op-amp effects
- Author(s): A.K. Betts ; J.T. Taylor ; D.G. Haigh
- Source: Electronics Letters, Volume 24, Issue 4, p. 202 –204
- DOI: 10.1049/el:19880135
- Type: Article
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A switched-capacitor integrator pair capable of forming a two integrator loop using a biphase clocking scheme and having low sensitivity to nonideal op-amp (OA) effects is presented. The OAs have continuous-time feedback paths, so avoiding voltage spikes caused by slewing. Expressions for response error and the results of a ladder filter simulation are given.
Correlation between anomalous latch-up I/V characteristics and observation of current distribution by IR microscopy in CMOS ICs
- Author(s): C. Canali ; F. Corsi ; E. Zanoni ; M. Muschitiello
- Source: Electronics Letters, Volume 24, Issue 4, p. 204 –205
- DOI: 10.1049/el:19880136
- Type: Article
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IR microscopy allows the correlation of anomalous latch-up electrical characteristics with current distribution in CMOS ICs, showing that anomalous behaviour is due to the competition of different pnpn paths and consequent current redistribution.
High-resolution ultrasound transverse flow measurement
- Author(s): M. Nikoonahad and F. Li
- Source: Electronics Letters, Volume 24, Issue 4, p. 205 –207
- DOI: 10.1049/el:19880137
- Type: Article
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A method for measuring the transverse component of flow velocity with high spatial resolution is reported. This technique is based on recording and cross-correlation of the signals scattered from two adjacent foci, produced by a newly developed two-beam acoustic lens. Experiments at 4.5 MHz are described and illustrated by results obtained from flow in the range 50–100 cm/s.
Correction to effective index method for rectangular dielectric waveguides
- Author(s): J.J.G.M. van der TOL and N.H.G. Baken
- Source: Electronics Letters, Volume 24, Issue 4, p. 207 –208
- DOI: 10.1049/el:19880138
- Type: Article
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A new method for obtaining the propagation characteristics of dielectric waveguides is presented. The method is based on a linear combination of three approximations. A comparison with a rigorous analytical method shows that the method presented is very accurate, even in the cutoff region. The method is easy to implement and requires minimal computational effort.
Effects of Nakagami fading on antijam performance requirements
- Author(s): E.K. Al-Hussaini
- Source: Electronics Letters, Volume 24, Issue 4, p. 208 –209
- DOI: 10.1049/el:19880139
- Type: Article
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The effect of fading on antijam (AJ) performance is considered when the envelopes of both the desired signal and the jamming signal fade with a Nakagami distribution. Two cases are analysed for conventional systems. In the first case, the fading is assumed to be slow compared with the duration of the message. In the second case, the fading is assumed to be slow compared with the symbol duration but fast compared with the message duration. For both cases numerical results are also included.
Efficient calculation of interconnection delays on GaAs-based VHSIC
- Author(s): A.K. Goel
- Source: Electronics Letters, Volume 24, Issue 4, p. 209 –210
- DOI: 10.1049/el:19880140
- Type: Article
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An efficient algorithm for the calculation of the propagation delays in the single-level high-density interconnections on GaAs-based VLSI is presented. The numerical technique can be applied to lossy as well as the lossless interconnection lines.
Wideband guided-wave periodic multi/demultiplexer with a ring cavity for optical FDM transmission systems
- Author(s): K. Oda ; N. Takato ; H. Toba ; K. Nosu
- Source: Electronics Letters, Volume 24, Issue 4, p. 210 –212
- DOI: 10.1049/el:19880141
- Type: Article
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A guided-wave periodic multi/demultiplexer with a ring cavity for optical frequency-division-multiplexing (FDM) transmission systems is demonstrated. The frequency spacing is 5 GHz at the 1.55 μm wavelength region and the bandwidth is 1.8 times as wide as that of conventional periodic filters with simple Mach-Zehnder interferometer structure.
Online fruit weighing using a 500 MHz waveguide cavity
- Author(s): A. de Waal ; S. Mercer ; B.J. Downing
- Source: Electronics Letters, Volume 24, Issue 4, p. 212 –213
- DOI: 10.1049/el:19880142
- Type: Article
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p.
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–213
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A system for measuring the weight of apples and oranges moving along a conveyor belt is described. The system relies on the effect of the moisture in the fruit on the resonant frequency and the Q-factor of a resonant waveguide cavity.
7× electrical pulse compression an inhomogeneous nonlinear transmission line
- Author(s): M. Tan ; C.-Y. Su ; W.J. Anklam
- Source: Electronics Letters, Volume 24, Issue 4, p. 213 –215
- DOI: 10.1049/el:19880143
- Type: Article
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A device which directly compresses electrical pulses using the concepts of soliton propagation along an inhomogeneous nonlinear transmission line is described. Numerical simulations on SPICE indicate that a 5 V input pulse with a FWHM of 66 ps can be compressed to a ≥10 V output pulse with a FWHM ≤5 ps. A compression factor of ≥7 has been experimentally measured on a low frequency scale model compressor.
Least-squares determination of the inversion of Laplace transforms via Taylor series
- Author(s): M. Razzaghi and M. Razzaghi
- Source: Electronics Letters, Volume 24, Issue 4, p. 215 –216
- DOI: 10.1049/el:19880144
- Type: Article
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–216
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Since the numerical inversion of Laplace transforms using Taylor series causes numerical instability owing to inversion of the Hilbert matrix, Unnikrishnan and Mathew recently proposed a technique to avoid the inversion of this ill-conditioned matrix. In the letter we show that improper use of their method could lead to very unreliable results. An implementation of their algorithm based on weighted least squares is also suggested.
All-optical active switch using a multiple quantum well nonlinear etalon as a laser diode mirror
- Author(s): J. Ohta ; K. Kyuma ; M. Oita ; K. Mitsunaga ; K. Hamanaka ; T. Nakayama
- Source: Electronics Letters, Volume 24, Issue 4, p. 216 –217
- DOI: 10.1049/el:19880145
- Type: Article
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A GaAs/AlGaAs multiple quantum well nonlinear etalon with a Bragg reflector was used as a feedback mirror of an external cavity laser diode. The laser oscillation was switched on/off by an external control light with high contrast ratio of 30:1.
1.5 μm InP/GaInAsP linear laser array with twelve individually addressable elements
- Author(s): L.A. Koszi ; B.P. Segner ; H. Temkin ; W.C. Dautremont-Smith ; D.T.C. Huo
- Source: Electronics Letters, Volume 24, Issue 4, p. 217 –219
- DOI: 10.1049/el:19880146
- Type: Article
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Linear arrays of twelve individually addressable InP/GaInAsP channelled-substrate buried-heterostructure lasers emitting at λ = 1.5 μm were fabricated. Spacing between active elements (250 μm) was made to match the fibre spacing in a 12-fibre ribbon. Individual arrays were epoxy bonded, p-side up to metallised BeO carriers. Best case uniformity of laser characteristics within an array is indicated by tight distributions of lasing threshold (9.8 ± 0.9 mA at 30°C) and output powers of (8.6 ± 0.4 mW at 100 mA). While no significant optical crosstalk could be detected, small increases (⋍ 10%) in device lasing thresholds were observed when two adjacent elements were operated CW simultaneously, probably due to the thermal impedance of the epoxy-bond employed and the resultant heating of operating nearest-neighbour devices. Such arrays offer the potential for reduced fibre alignment time per element thus reducing packaging costs per source. In addition, reduced space requirement per source is realised.
Low-dispersion fluoride glass single-mode fibres operating in two spectral ranges
- Author(s): Y. Ohishi and S. Takahashi
- Source: Electronics Letters, Volume 24, Issue 4, p. 220 –221
- DOI: 10.1049/el:19880147
- Type: Article
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Chromatic dispersion characteristics of fluoride glass singlemode fibres are investigated experimentally and theoretically. It is proposed that the quasi-single-mode operation at zero material dispersion wavelength is effective in extending the low dispersive spectral range. It is shown that total chromatic dispersion is suppressed within ± 1 ps/km/nm in the two spectral ranges of 1.57–1.71 μm and 2.4–3.35 μm.
Electro-optical modulators using novel buried waveguides in GaInAsP/InP material
- Author(s): Y. Bourbin ; A. Enard ; R. Blondeau ; M. Razeghi ; D. Rondi ; M. Papuchon ; B. de Cremoux
- Source: Electronics Letters, Volume 24, Issue 4, p. 221 –223
- DOI: 10.1049/el:19880148
- Type: Article
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Losses as low as 0.4 ± 0.2 dB/cm and electro-optical modulation efficiencies as high as 5°/V/mm have been obtained in single mode waveguides employing a novel buried structure in GaInAsP/InP grown by LPMOCVD and processed by selective chemical etching. Such modulators are potentially excellent candidates for integrated optoelectronics.
Novel approach to discrete interpolation using the subsequence FHT
- Author(s): C.-Y. Hsu and T.-P. Lin
- Source: Electronics Letters, Volume 24, Issue 4, p. 223 –224
- DOI: 10.1049/el:19880149
- Type: Article
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A novel approach to discrete interpolation of finite-duration real sequences using subsequences with the fast Hartley transform (FHT) is presented. It is shown that accuracy can be improved by decomposing the signal into an ordered set of subsequences. This development is also convenient because it permits the use of inverse fast Hartley transforms (IFHT) that are always the same size as the original FHT. This approach is also appropriate for the parallel processing of each subsequence.
New realisations of first-order two-dimensional all-pass and all-pole digital filters
- Author(s): H.K. Kwan
- Source: Electronics Letters, Volume 24, Issue 4, p. 224 –226
- DOI: 10.1049/el:19880150
- Type: Article
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A number of stable and lossless first-order two-dimensional all-pass and all-pole digital filter structures each with two delays, two multipliers, and six adders are presented. Owing to the losslessness property, zero-input oscillations can easily be eliminated by magnitude truncations. The resultant structures are modular and are suitable for VLSI implementation.
High mobility two-dimensional electron gas in InP/Ga0.47In0.53As heterojunctions grown by low-pressure organometallic vapour phase epitaxy
- Author(s): P.J.A. Thijs ; J.M. Lagemaat ; R. Woltjer
- Source: Electronics Letters, Volume 24, Issue 4, p. 226 –227
- DOI: 10.1049/el:19880151
- Type: Article
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The two-dimensional electron gas in InP/GaInAs heterojunctions, grown by LP-OMVPE, showed Hall mobilities as high as 164 000 and 103 000 cm2/Vs at 4 K and 80 K, respectively. A maximum Hall mobility of 172 000 cm2/Vs was measured at 20 K. Shubnikov-de Haas oscillations measured at 200 mK in magnetic fields up to 20 T indicated the total absence of parallel conduction. By illuminating the sample it was possible to populate the second electrical sub-band at a total carrier density ns = 4.4 × 1011 cm−2.
Microwave pnp AlGaAs/GaAs heterojunction bipolar transistor
- Author(s): B. Bayraktaroglu ; N. Camilleri ; S.A. Lambert
- Source: Electronics Letters, Volume 24, Issue 4, p. 228 –229
- DOI: 10.1049/el:19880152
- Type: Article
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The microwave performance of a pnp AlGaAs/GaAs heterojunction bipolar transistor was demonstrated for the first time. Common emitter current gains of 60 were obtained using MOCVD grown structures with 100 nm thick base layers and self-aligned emitter-base contacts. ft and fmax values were 12 and 20 GHz respectively. Under common-base configuration, 8 dB gain was obtained at 10 GHz. Device performance was characterised under CW and pulsed conditions.
Tm-pass polariser using metal-clad waveguide with high index buffer layer
- Author(s): H.A. Jamid and S.J. Al-Bader
- Source: Electronics Letters, Volume 24, Issue 4, p. 229 –230
- DOI: 10.1049/el:19880153
- Type: Article
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The four layer planar metal-clad optical waveguide is shown to provide favourable transmission for TM waves in comparison with TE waves when a thin high-index buffer layer is inserted between the guiding film and the metallic layer. A perturbative expression for the loss of the two polarisations is given.
15.6 GHz HBT microstrip oscillator
- Author(s): S.R. Lesage ; M. Madihian ; N. Hayama ; K. Honjo
- Source: Electronics Letters, Volume 24, Issue 4, p. 230 –232
- DOI: 10.1049/el:19880154
- Type: Article
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This letter describes the design and performance of the first reported Ku-band HBT oscillator. The circuit was implemented in microstrip on an alumina substrate. The device used was a fully self-aligned AlGaAs/GaAs HBT using side wall technology. An output power of +6.5 dBm was achieved at 15.6 GHz with a collector efficiency of 11%. The phase noise was −60 dBc/Hz at 10 kHz offset, which is comparable to that of a silicon bipolar oscillator, and 20 dB less than that for a GaAs FET oscillator at the same frequency band.
Dielectric waveguide channel dropping filter using 3 dB couplers and bandstop gratings
- Author(s): D.C. Park and S.K. Kim
- Source: Electronics Letters, Volume 24, Issue 4, p. 232 –233
- DOI: 10.1049/el:19880155
- Type: Article
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Results for a new dielectric-waveguide (DW) channel dropping filter are presented. The DW channel dropping filter is composed of 3dB directional couplers and bandstop gratings. This class of channel dropping filters yields much wider bandwidth than ring resonator type channel dropping filters.
Another public-key distribution system based on matrix rings
- Author(s): Xiao Rong
- Source: Electronics Letters, Volume 24, Issue 4, p. 233 –234
- DOI: 10.1049/el:19880156
- Type: Article
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In recent letters, several public-key distribution systems have been proposed which are based on matrix rings. This paper sets up another public-key distribution scheme in matrix rings. The security depends on the problem of solving a random knapsack.
Performance of optical receivers incorporating multiemission superlattice avalanche photodiodes
- Author(s): R.S. Fyath and J.J. O'Reilly
- Source: Electronics Letters, Volume 24, Issue 4, p. 234 –235
- DOI: 10.1049/el:19880157
- Type: Article
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Recently interest has been expressed in superlattice avalanche photodiodes (SAPDs) in which the initiating carrier can impact more than one ionisation per stage, as a further step towards the solid-state photomultiplier. This letter indicates that these advanced SAPDs are likely to offer improved receiver sensitivity, compared with normal SAPDs, only if the residual hole ionisation is kept to an extremely low value.
Electron beam sampling of IC-internal GHz signals
- Author(s): R. Schmitt ; D. Winkler ; M. Brunner ; B. Lischke
- Source: Electronics Letters, Volume 24, Issue 4, p. 235 –236
- DOI: 10.1049/el:19880158
- Type: Article
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An electron beam test system has been developed which allows internal waveform measurements on integrated circuits operating with GHz frequencies. Internal signals of a 7 GHz frequency divider have been recorded. The e-beam system produces 15ps electron pulses which allow rise time measurements down to 30 ps with less than 10% error and delay measurements below 5 ps.
1.5 μm λ/4-shifted DFB LD filter and 100 Mbit/s two-channel wavelength signal switching
- Author(s): T. Numai ; M. Fujiwara ; N. Shimosaka ; K. Kaede ; M. Nishio ; S. Suzuki ; I. Mito
- Source: Electronics Letters, Volume 24, Issue 4, p. 236 –237
- DOI: 10.1049/el:19880159
- Type: Article
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A 1.5 μm tunable wavelength filter was studied. A 1.5 μ λ/4-shifted distributed feedback laser diode (DFB LD) was applied as an effective single wavelength selective filter. A wavelength switching experiment in a 100 Mbit/s two-channel wavelength multiplexed system was successfully demonstrated by using the tunable λ/4 shifted DFB LD filter.
Gate coupling and floating-body effects in thin-film SOI MOSFETs
- Author(s): S.S. Tsao ; D.R. Myers ; G.K. Celler
- Source: Electronics Letters, Volume 24, Issue 4, p. 238 –239
- DOI: 10.1049/el:19880160
- Type: Article
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Thin-film, silicon-on-insulator (SOI) MOSFETs exhibit bias-dependent suppression of the kink effect. For zero or positive back gate bias, the well known kink effect is suppressed but the threshold voltage depends strongly on back gate bias. For sufficiently negative back gate bias (as might be required for total-dose radiation-hard applications), the kink effect reemerges and the threshold voltage depends instead on the applied drain voltage.
780 nm AlGaAs DFB lasers fabricated by MOCVD
- Author(s): S. Hirata ; H. Narui ; O. Kumagai
- Source: Electronics Letters, Volume 24, Issue 4, p. 239 –240
- DOI: 10.1049/el:19880161
- Type: Article
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Continuous single mode oscillation was obtained in AlGaAs DFB lasers operating at approximately 780 nm at room temperature. DFB lasers have a low threshold current of about 25 mA and can be operated at an output level of up to 10 mW in stable, single longitudinal mode.
Analysis of planar bulk acoustic wave devices
- Author(s): E. Elias and A. Jhunjhunwala
- Source: Electronics Letters, Volume 24, Issue 4, p. 240 –242
- DOI: 10.1049/el:19880162
- Type: Article
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The bulk acoustic waves launched in a piezoelectric crystal by an interdigital transducer, considered earlier as a spurious response in SAW devices, are now usefully employed in planar bulk acoustic wave (BAW) devices. This paper presents the results of a theoretical analysis of bulk wave response in a material. The analysis enables one to design BAW devices with a more desirable response than those obtained so far.
Super low noise HEMT using focused ion beam lithography
- Author(s): K. Nagahama ; M. Nakanishi ; Y. Sasaki ; K. Hosono ; H. Morimoto ; T. Katoh ; R. Hirano ; T. Murotani ; A. Kawagishi
- Source: Electronics Letters, Volume 24, Issue 4, p. 242 –243
- DOI: 10.1049/el:19880163
- Type: Article
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Focused ion beam lithography is applied for the first time to low noise HEMTs for delineating a mushroom shaped quarter micron gate. The very low noise performance obtained, which is of 0.68 and 0.83 dB minimum noise figure at 12 and 18 GHz respectively, shows that focused ion beam lithography is very promising for super low noise HEMT applications.
Theory of tapering single-mode optical fibres by controlled core diffusion
- Author(s): C.P. Botham
- Source: Electronics Letters, Volume 24, Issue 4, p. 243 –245
- DOI: 10.1049/el:19880164
- Type: Article
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The feasibility of tapering the core of a fluorine-doped monomode fibre by controlled thermal diffusion is investigated. Numerical calculations suggest that operating temperatures of 1100–1600°C for heating times of less than one hour should produce substantial broadening of the fundamental mode field. Experimental measurements have confirmed the effect. Implications for optical connector technology are discussed.
Tapers in single-mode optical fibre by controlled core diffusion
- Author(s): J.S. Harper ; C.P. Botham ; S. Hornung
- Source: Electronics Letters, Volume 24, Issue 4, p. 245 –246
- DOI: 10.1049/el:19880165
- Type: Article
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A method of obtaining tapered single mode fibre cores by controlled thermal diffusion of the dopant is described. The mechanical fibre dimensions are maintained during this process. Extended tapers have been produced, which show an increased tolerance to longitudinal and transverse offsets. Such tapers will prove useful for a range of optical fibre components.
Erratum: Bit error ratio of CPFSK coherent optical receivers
- Author(s): L. Kazovsky and G. Jacobsen
- Source: Electronics Letters, Volume 24, Issue 4, page: 246 –246
- DOI: 10.1049/el:19880166
- Type: Article
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