Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 24, Issue 25, 8 December 1988
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 24, Issue 25
8 December 1988
Fabrication techniques for a novel three-dimensional monolithic integrated circuit transmission line in silicon
- Author(s): A.D. Yarbrough ; G.C. Dalman ; C.A. Lee
- Source: Electronics Letters, Volume 24, Issue 25, p. 1533 –1534
- DOI: 10.1049/el:19881046
- Type: Article
- + Show details - Hide details
-
p.
1533
–1534
(2)
A novel integrated circuit transmission line, trench waveguide, has been developed for high frequency/high speed applications. The three-dimensional structure is suitable as a low impedance interconnect. The fabrication process developed uses special wet etch and angle evaporation techniques. Measurements on large-scale models of the device yielded impedances as low as 12Ω.
Flexible networks employing nonintrusive single-mode optical fibre taps
- Author(s): G.J. Cannell ; R.E. Epworth ; P.G. Hale ; J.P. King ; T. Large ; A. Robinson ; R.L. Williams ; R. Worthington
- Source: Electronics Letters, Volume 24, Issue 25, p. 1534 –1536
- DOI: 10.1049/el:19881047
- Type: Article
- + Show details - Hide details
-
p.
1534
–1536
(3)
We report the demonstration of a novel system using direct injection and collection single-mode fibre taps which are deployed without the need to break the fibre or disrupt existing traffic. A 50 reconfigurable tap system is feasible.
FM noise and power-dependent linewidth of GaAs/AlGaAs GRINSCH-SQW-MCRW flared waveguide lasers
- Author(s): E. Hartl ; M. Heinrich ; W. Harth ; M. Muschke ; H.D. Wolf
- Source: Electronics Letters, Volume 24, Issue 25, p. 1536 –1537
- DOI: 10.1049/el:19881048
- Type: Article
- + Show details - Hide details
-
p.
1536
–1537
(2)
The power-dependent part of the linewidth of GaAs/AlGaAs GRINSCH-SQW flared waveguide lasers has been determined from FM noise measurements. For the linewidthpower product a low value of 4 MHz mW has been found, which can be related to the small spontaneous emission coefficient βSP≃(3.7 ± 1)×10−6 and a linewidth enhancement factor α≃1.2 ± 0.5.
Laser diode pumped operation of Er3+-doped fibre amplifier
- Author(s): T.J. Whitley
- Source: Electronics Letters, Volume 24, Issue 25, p. 1537 –1539
- DOI: 10.1049/el:19881049
- Type: Article
- + Show details - Hide details
-
p.
1537
–1539
(3)
Semiconductor laser-diode pumped operation of an erbiumdoped fibre amplifier, exhibiting 6dB gain and operating at 1536nm, is reported. The amplifier was optically pumped at 807 nm using a self-injection-locked semiconductor laser diode array.
Application of MLSE to GMSK signal reception using frequency demodulator
- Author(s): K. Ohno and F. Adachi
- Source: Electronics Letters, Volume 24, Issue 25, p. 1539 –1540
- DOI: 10.1049/el:19881050
- Type: Article
- + Show details - Hide details
-
p.
1539
–1540
(2)
The applicability of the maximum likelihood sequential estimator (MLSE) to 16kbit/s GMSK signal reception using a frequency demodulator is investigated. The experimental results for GMSK with a premodulation filter bandwidth-bit duration product of BbT = 0.25 show that the bit error rate performance with MLSE approaches that of MSK, with a loss of about 2.5 dB in the signal energy per bit/noise power spectral density ratio and about 3.5 dB in the desired signal/cochannel interference ratio. The experimental block error rates are also reported.
Throughput of slotted ALOHA channel with multiple antennas and receivers
- Author(s): C. Lau and C. Leung
- Source: Electronics Letters, Volume 24, Issue 25, p. 1540 –1542
- DOI: 10.1049/el:19881051
- Type: Article
- + Show details - Hide details
-
p.
1540
–1542
(3)
The performance improvement which can be obtained in a slotted ALOHA channel by the use of directional antennas and multiple receivers is analysed in the letter.
New III-V double-heterojunction laser emitting near 3.2μm
- Author(s): H. Mani ; G. Boissier ; A. Joullie ; E. Tournie ; F. Pitard ; A.-M. Joullie ; C. Alibert
- Source: Electronics Letters, Volume 24, Issue 25, p. 1542 –1543
- DOI: 10.1049/el:19881052
- Type: Article
- + Show details - Hide details
-
p.
1542
–1543
(2)
Double heterostructure lasers based on the InAsSbP/InAsSb system have been prepared by liquid phase epitaxy. They operate at 78 K near 3.2 μm, with a threshold current density of 4.5 kA/cm2 in pulsed conditions. The characteristic temperature T0 is 30 K.
Multi-Gbit/s optical time division multiplexing employing LiNbO3 switches with low-frequency sinewave drive
- Author(s): L.C. Blank
- Source: Electronics Letters, Volume 24, Issue 25, p. 1543 –1544
- DOI: 10.1049/el:19881053
- Type: Article
- + Show details - Hide details
-
p.
1543
–1544
(2)
A four-channel optical time division multiplexing scheme is presented which employs cascaded optical switches and operates on standard non-return-to-zero format optical data channels. Only low-frequency electrical drive signals at the clock speed of the input channels are required for the switches, and low-jitter output signals are obtained after a complete Mux-Demux operation.
Soliton-Raman generation with pump radiation in normal dispersion regime
- Author(s): A.S. Gouveia-Neto and J.R. Taylor
- Source: Electronics Letters, Volume 24, Issue 25, p. 1544 –1545
- DOI: 10.1049/el:19881054
- Type: Article
- + Show details - Hide details
-
p.
1544
–1545
(2)
It has been shown experimentally that the broad spectral bandwidths associated with soliton-Raman generation need not necessarily be generated via the process of modulational instability, and that Raman scattering quite effectively acts as the seed.
Design and fabrication of planar, resonant Franz-Keldysh optical modulator
- Author(s): M.S. Leeson ; F.P. Payne ; R.J. Mears ; J.E. Carroll ; J.S. Roberts ; M.A. Pate ; G. Hill
- Source: Electronics Letters, Volume 24, Issue 25, p. 1546 –1547
- DOI: 10.1049/el:19881055
- Type: Article
- + Show details - Hide details
-
p.
1546
–1547
(2)
We describe the design, fabrication and performance of a planar, resonant Franz-Keldysh modulator which has produced a 38% transmission change for 20 V applied bias. The device consists of a reverse-biased GaAs pin diode grown by MOVPE and from which the substrate has been removed.
Recursive digital filters with predetermined group delay and Chebyshev stopband attenuation
- Author(s): P. Thajchayapong ; K. Yammun ; A. Khunkitti
- Source: Electronics Letters, Volume 24, Issue 25, p. 1547 –1549
- DOI: 10.1049/el:19881056
- Type: Article
- + Show details - Hide details
-
p.
1547
–1549
(3)
Recently, a conformal mapping technique has been described whereby the transfer function of a recursive digital filter with prescribed group delay and Chebyshev stopband can be obtained in such a way that the numerator and denominator polynomials are different in order. It is shown here that such a transfer function can also be determined using the familiar bilinear transformation and the well known method in the s-domain. Numerical examples are included to demonstrate the technique.
Thermal stability of heterojunction interfaces in GaAs/AlGaAs structures
- Author(s): D.V. Morgan ; A. Christou ; D. Diskett ; G.M. Gauneau
- Source: Electronics Letters, Volume 24, Issue 25, p. 1549 –1550
- DOI: 10.1049/el:19881057
- Type: Article
- + Show details - Hide details
-
p.
1549
–1550
(2)
This letter reports on the preliminary study of the stability of GaAs/AlGaAs interfaces under thermal stressing up to 1000°C in an optical furnace. The interfaces are studied using RBS and SIMS techniques and they confirm that no observable degradation occurs up to 900°C. At 1000°C diffusion of aluminium from the AlGaAs layer into the GaAs occurs but this is at a very low level.
Application of communications theory to analyse carrier density modulation effects in travelling-wave semiconductor laser amplifiers
- Author(s): T.G. Hodgkinson and R.P. Webb
- Source: Electronics Letters, Volume 24, Issue 25, p. 1550 –1552
- DOI: 10.1049/el:19881058
- Type: Article
- + Show details - Hide details
-
p.
1550
–1552
(3)
It is shown that standard communications phase modulation theory can be used to analyse the carrier density modulation caused by interchannel beat powers. Also, it is shown that spontaneous lifetime produces a phase shift which causes an interchange of power between channels.
Radiation pattern measurements of electrically large antennas using a compact antenna test range at 180 GHz
- Author(s): C.G. Parini and C.J. Prior
- Source: Electronics Letters, Volume 24, Issue 25, p. 1552 –1554
- DOI: 10.1049/el:19881059
- Type: Article
- + Show details - Hide details
-
p.
1552
–1554
(3)
A 3m-width millimetre-wave compact antenna test range for antenna measurements up to 200 GHz has been constructed at Queen Mary College. Measurements of a 400mm aperture width 90° offset test antenna operating at 180 GHz are presented, indicating that a 62 dB dynamic range is achievable.
Observation of negative differential resistance in Al0.2Ga0.8As/Al0.4Ga0.6As/GaAs double barrier resonant tunnelling structure
- Author(s): C.H. Yang and H.D. Shih
- Source: Electronics Letters, Volume 24, Issue 25, p. 1554 –1555
- DOI: 10.1049/el:19881060
- Type: Article
- + Show details - Hide details
-
p.
1554
–1555
(2)
Negative differential resistance has been observed in the current/voltage characteristics of a double barrier resonant tunnelling structure with Al0.2Ga0.8As emitters, Al0.4Ga0.6As barriers and GaAs quantum well for the first time. The NDR becomes clear at low temperatures below 77 K, and the current/voltage characteristic is asymmetric. Our results demonstrate that high-quality abrupt GaAs-AlxGa1−xAs-AlyGa1−yAs heterojunctions can be of use in resonant tunnelling structures.
Experimental determination of electroabsorption in GaAs/Al0.32Ga0.68As multiple quantum well structures as function of well width
- Author(s): K.W. Jelley ; K. Alavi ; R.W.H. Engelmann
- Source: Electronics Letters, Volume 24, Issue 25, p. 1555 –1557
- DOI: 10.1049/el:19881061
- Type: Article
- + Show details - Hide details
-
p.
1555
–1557
(3)
Electroabsorption in GaAs/Al0.32Ga0.68As multiple quantum well structures was experimentally studied for quantum well widths in the range 50–260 Å. The maximum obtainable change in absorption coefficient was found to increase monotonically with decreasing well width at the cost of increasing electric field.
Multiplexing of sensors based on fibre-optic differential delay RF filters
- Author(s): C.A. Wade ; M.J. Marrone ; A.D. Kersey ; A. Dandridge
- Source: Electronics Letters, Volume 24, Issue 25, p. 1557 –1559
- DOI: 10.1049/el:19881062
- Type: Article
- + Show details - Hide details
-
p.
1557
–1559
(3)
The letter describes frequency-division multiplexing of intensity modulation filtering sensors. The feasibility of the scheme was demonstrated by multiplexing a pressure sensor, measured over the range 0–500 psi, and a temperature sensor, measured over the range 10–40°C.
Correction of (sin x)/x distortion introduced by discrete-time/continuous-time signal conversion
- Author(s): J.C.M. Bermudez ; R. Seara ; S. Noceti Filho
- Source: Electronics Letters, Volume 24, Issue 25, p. 1559 –1560
- DOI: 10.1049/el:19881063
- Type: Article
- + Show details - Hide details
-
p.
1559
–1560
(2)
A new analytical method is proposed for the correction of the (sin x)/x distortion which is characteristic of the spectra of discrete-time signals converted to continuous-time waveforms. The method is based on the adjustment of the quality factors associated with the poles of the reconstruction filter transfer function. Simulation results show that, in spite of its simplicity, the new technique yields significant improvements in the frequency spectrum of the continuous-time signal after the conversion.
Current copier cells
- Author(s): S.J. Daubert ; D. Vallancourt ; Y.P. Tsividis
- Source: Electronics Letters, Volume 24, Issue 25, p. 1560 –1562
- DOI: 10.1049/el:19881064
- Type: Article
- + Show details - Hide details
-
p.
1560
–1562
(3)
Analogue circuits are presented that can sample, hold, and make practically identical multiple copies of current signals, without the need for accurate matching of active or passive circuit components.
Integrated-optic acoustically tunable infra-red optical filter
- Author(s): B.L. Heffner ; D.A. Smith ; J.E. Baran ; A. Yi-Yan ; K.W. Cheung
- Source: Electronics Letters, Volume 24, Issue 25, p. 1562 –1563
- DOI: 10.1049/el:19881065
- Type: Article
- + Show details - Hide details
-
p.
1562
–1563
(2)
We demonstrate a narrowband (≈1 nm) LiNbO3 acoustically tunable optical filter with a tuning range adequate to span the 1.3–1.55 μm wavelength range, exploiting the considerable advantages of an unconventional x-cut design.
Active mode-locking of 1.3 μm extended-cavity silicon chip Bragg reflector laser
- Author(s): G. Raybon ; R.S. Tucker ; G. Eisenstein ; C.H. Henry
- Source: Electronics Letters, Volume 24, Issue 25, p. 1563 –1565
- DOI: 10.1049/el:19881066
- Type: Article
- + Show details - Hide details
-
p.
1563
–1565
(3)
We report active mode-locking of an extended-cavity silicon chip Bragg reflector laser. Pulses of 27 ps duration at repetition rates up to 7 GHz, have been achieved with a controllable narrow optical spectrum.
GaInAsP dual wavelength laser
- Author(s): A.B. Piccirilli ; N.K. Dutta ; L.A. Greuzka ; R.F. Karlicek ; J.D. Wynn
- Source: Electronics Letters, Volume 24, Issue 25, p. 1565 –1566
- DOI: 10.1049/el:19881067
- Type: Article
- + Show details - Hide details
-
p.
1565
–1566
(2)
The fabrication and performance characteristics of a dual wavelength laser emitting near 1.3 μm and 1.55 μm are described. The lasers are of the etched mesa buried heterostructure type, and utilise semi-insulating InP layers both for lateral optical confinement and current confinement. The 1.55 μm emission is at a single wavelength by virtue of the frequency selective feedback provided by a grating etched on the substrate. The lasers have threshold currents in the 20 to 40 mA range, and have quantum efficiencies comparable to single emitter lasers.
New orthogonalised IIR adaptive filter
- Author(s): H. Perez and S. Tsujii
- Source: Electronics Letters, Volume 24, Issue 25, p. 1566 –1567
- DOI: 10.1049/el:19881068
- Type: Article
- + Show details - Hide details
-
p.
1566
–1567
(2)
A new IIR-ADF algorithm is proposed in which the discrete cosine transform, a fairly good approach of KLT for a large number of signal classes, is used to split the input signal into a set of nearly orthogonal transform coefficients. Subsequently these coefficients are filtered by a bank of IIR-ADFs whose coefficients are independently updated to minimise a common error. Computer simulations show that the proposed algorithm provides a faster convergence rate than the Gauss-Newton algorithm with a much reduced computational load.
Measurement procedure for specification of amplitude of sine-shaped RF semiconductor laser current by means of RF DC substitution
- Author(s): M. Rocks and L. Giehmann
- Source: Electronics Letters, Volume 24, Issue 25, p. 1568 –1569
- DOI: 10.1049/el:19881069
- Type: Article
- + Show details - Hide details
-
p.
1568
–1569
(2)
The letter presents a procedure of measuring the modulation current flowing through a single-mode laser on the basis of the amplitude modulation which is always present. This procedure measures only the current flowing through the active laser medium and contributing to the generation of radiation. The procedure can also be used when the laser to be measured has already been installed in a housing, and/or if the laser is preceded by a network equalising the FM-response characteristic.
Monolithic programmable RF filter
- Author(s): T.G. Kim and R.L. Geiger
- Source: Electronics Letters, Volume 24, Issue 25, p. 1569 –1571
- DOI: 10.1049/el:19881070
- Type: Article
- + Show details - Hide details
-
p.
1569
–1571
(3)
A voltage programmable monolithic continuous-time bandpass filter that employs transconductance-amplifier-based fully differential integrators is introduced. Experimental results of a circuit fabricated in a 3μm CMOS process that is programmable over the range from 2 to 16 MHz are presented.
I/V anomality and device performance of submicrometre-gate Ga0.47In0.53As/Al0.48In0.52As HEMT
- Author(s): J.B. Kuang ; P.J. Tasker ; Y.K. Chen ; G.W. Wang ; L.F. Eastman ; O.A. Aina ; H. Hier ; A. Fathimulla
- Source: Electronics Letters, Volume 24, Issue 25, p. 1571 –1572
- DOI: 10.1049/el:19881071
- Type: Article
- + Show details - Hide details
-
p.
1571
–1572
(2)
Discrepancies observed between the DC and RF characteristics of the Ga0.47In0.53As/Al0.48In0.52As HEMT are presented. Owing to the deep-level electron trapping, the DC I/V curve is distorted and the DC transconductance (gmDC) is severely compressed. The small-signal RF performance is not degraded by this low-frequency phenomenon. RF transconductance (gmRF)of 555mS/mm and the current gain cut-off frequency (f1) of 102 GHz were obtained.
Optical soliton propagation using 3 GHz gain-switched 1.3 μm laser diodes
- Author(s): K. Iwatsuki ; A. Takada ; M. Saruwatari
- Source: Electronics Letters, Volume 24, Issue 25, p. 1572 –1574
- DOI: 10.1049/el:19881072
- Type: Article
- + Show details - Hide details
-
p.
1572
–1574
(3)
No-chirped high-peak-power optical pulses at a 2.6 GHz repetition rate from gain-switched 1.3 μm distributed feedback laser diodes were obtained using both linear fibre compression, and Raman amplification. Coupling these pulses into a dispersion-shifted single-mode optical fibre, we have demonstrated optical soliton propagation at a high repetition rate using the laser diodes.
Noise characteristics of GaAs metal-semiconductor-metal photodiodes
- Author(s): O. Wada ; H. Hamaguchi ; L. le Beller ; C.Y. Boisrobert
- Source: Electronics Letters, Volume 24, Issue 25, p. 1574 –1575
- DOI: 10.1049/el:19881073
- Type: Article
- + Show details - Hide details
-
p.
1574
–1575
(2)
Noise spectral density was measured on GaAs metal-semiconductor-metal photodiodes. The noise spectral density is determined solely by the photocurrent shot noise at low bias voltage, but it exhibits a contribution of excess noise associated with the photocurrent gain at high bias voltage.
Dispersive nonlinearity evaluation in a bistable laser diode
- Author(s): R. Calvani and R. Caponi
- Source: Electronics Letters, Volume 24, Issue 25, p. 1575 –1577
- DOI: 10.1049/el:19881074
- Type: Article
- + Show details - Hide details
-
p.
1575
–1577
(3)
Bistability in a diode laser amplifier has been successfully exploited for an indirect measurement of the dispersive nonlinearity coefficient n2. The results are in good agreement with the corresponding data for bulk semiconductors. The best fit of the experimental hysteresis cycle confirms the validity of the technique.
Novel coupler for gallium arsenide monolithic microwave integrated circuit applications
- Author(s): I.D. Robertson and A.H. Aghvami
- Source: Electronics Letters, Volume 24, Issue 25, p. 1577 –1578
- DOI: 10.1049/el:19881075
- Type: Article
- + Show details - Hide details
-
p.
1577
–1578
(2)
A novel type of coupled line structure has been used on a GaAs monolithic microwave integrated circuit to realise a 90° coupler operating over 2 to 10 GHz. The multilayer nature of the GaAs IC has been used to realise quasiplanar broadside coupled lines. The coupler has been folded to make it small and measures only 1.0×0.8 mm.
New algorithm for (9 GHz) range-gated radar system
- Author(s): G. Schweeger and I.J. Dilworth
- Source: Electronics Letters, Volume 24, Issue 25, p. 1578 –1580
- DOI: 10.1049/el:19881076
- Type: Article
- + Show details - Hide details
-
p.
1578
–1580
(3)
A new rain rate estimation algorithm is presented for simple terrestrial range-gated radars commonly used in radio propagation studies. Use of the algorithm permits the effective elimination of ground-based reflections from objects which are independent of precipitation conditions. Results from simulations on a 9 GHz terrestrial radar system are presented.
Video-rate, spatially variant filtering technique using stream processing architecture
- Author(s): D.J. Allerton ; J.D. Evemy ; E.J. Zaluska
- Source: Electronics Letters, Volume 24, Issue 25, p. 1580 –1581
- DOI: 10.1049/el:19881077
- Type: Article
- + Show details - Hide details
-
p.
1580
–1581
(2)
A novel space-variant filtering algorithm is described providing eflicient anti-aliasing for the spatial transformation of two-dimensional images. The algorithm is implemented using a stream processing architecture operating on one pixel per machine cycle and a prototype system operating at video rate has been constructed.
Development of advanced CMOS-compatible bipolar transistor for BiCMOS technology
- Author(s): A. Nouailhat ; G. Giroult ; P. Delpech ; A. Gérodolle
- Source: Electronics Letters, Volume 24, Issue 25, p. 1581 –1583
- DOI: 10.1049/el:19881078
- Type: Article
- + Show details - Hide details
-
p.
1581
–1583
(3)
A fully CMOS-compatible single-level polycide bipolar technology is studied. Two dimensional (2D) process simulations of the device have been carried out and compared with SIMS measurements. Fabrication steps, process simulations and first electrical results are presented and discussed.
Planar 3 × 3 array of GaInAs/InP MQW surface optical modulators grown by gas-source MBE
- Author(s): M.A.Z. Rejman-Greene ; E.G. Scott ; E. McGoldrick
- Source: Electronics Letters, Volume 24, Issue 25, p. 1583 –1584
- DOI: 10.1049/el:19881079
- Type: Article
- + Show details - Hide details
-
p.
1583
–1584
(2)
Planar two-dimensional semiconductor arrays of optical modulators operating in the region of 1.55μm are reported for the first time. A process is described which uses MBE-grown GaInAs/InP MQW layers, and which gives a high yield of small, low-leakage optical modulators with an absorption change in each device of 3 dB for an applied bias of −30 V.
Design of symmetric and asymmetric passive 3-branch power dividers by beam propagation method
- Author(s): G.L. Yip and M.A. Sekerka-Bajbus
- Source: Electronics Letters, Volume 24, Issue 25, p. 1584 –1586
- DOI: 10.1049/el:19881080
- Type: Article
- + Show details - Hide details
-
p.
1584
–1586
(3)
Highly accurate models of waveguide devices made by diffusion, in general, can be set up for design calculations, employing the effective index and beam propagation methods. The illustrative example on a symmetric three-branch power divider by K+-ion exchange in glass yields excellent agreement between theoretical calculations and measured results on a fabricated device.
Gasifier system modelling
- Author(s): A.R. Delavari and R.L. Klein
- Source: Electronics Letters, Volume 24, Issue 25, p. 1586 –1588
- DOI: 10.1049/el:19881081
- Type: Article
- + Show details - Hide details
-
p.
1586
–1588
(3)
Identification of a coal gasification system in two system operation modes is demonstrated. One mode is normal system operation. The second mode is one in which no coal is fed to the plant but all other inputs (airflow, steam flow etc.) are established as they would be in normal system operation. The results of identification for these two modes (hot and cold) are discussed and compared.
Modified CCPLL for demodulation of two FM signals with overlapping spectra
- Author(s): D. Wulich ; E.I. Plotkin ; M.N.S. Swamy ; E. Kashi
- Source: Electronics Letters, Volume 24, Issue 25, p. 1588 –1590
- DOI: 10.1049/el:19881082
- Type: Article
- + Show details - Hide details
-
p.
1588
–1590
(3)
A demodulator of two FM signals with overlapping spectra, which is based on a cross coupled phase locked loop (CCPLL) system, is investigated. It is shown that the application of an additional PLL as an FM demodulator of an input mixture (two FM signals) is advantageous. The new configuration of CCPLL demodulator overcomes the main disadvantage of the known CCPLL based demodulator, i.e. existence of nonstable regions within which a demodulator's output converges to a false state.
Ambient temperature HgCdTe photoconductor can achieve detectivity higher than 1×108cm Hz1/2/W at 10.6μm
- Author(s): Z. Djuric ; J. Piotrowski ; Z. Jaksic ; Z. Djinovic
- Source: Electronics Letters, Volume 24, Issue 25, p. 1590 –1591
- DOI: 10.1049/el:19881083
- Type: Article
- + Show details - Hide details
-
p.
1590
–1591
(2)
We have calculated the performance of ambient temperature long wavelength HgCdTe photoconductors as a function of material composition and doping. It has been shown that the figures of merit, both calculated and measured, are several times higher than the ones reported previously. It is concluded that an optimised ambient temperature HgCdTe photoconductor can achieve detectivity higher than 1×108cm Hz1/2/W at λ = 10.6 μm.
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article
