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1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 24, Issue 20, 29 September 1988
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Volume 24, Issue 20
29 September 1988
Construction of t-EC/AUED codes
- Author(s): R. Andrew
- Source: Electronics Letters, Volume 24, Issue 20, p. 1257 –1258
- DOI: 10.1049/el:19880855
- Type: Article
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A t-EC/AUED code is constructed by appending a single check symbol from an alphabet S to each word of an n-bit binary t-EC code of even weight. Conditions are derived for the construction of S and a procedure is given which, for some values of t, n, leads to codes with fewer check bits than known codes with equivalent properties.
Two-step purely thermal ion-exchange technique for single-mode waveguide devices in glass
- Author(s): M. Seki ; H. Hashizume ; R. Sugawara
- Source: Electronics Letters, Volume 24, Issue 20, p. 1258 –1259
- DOI: 10.1049/el:19880856
- Type: Article
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Two-step purely thermal ion-exchange technique using two monovalent ions for single-mode waveguides is proposed. Experiments show embedded waveguide structure below the surface of the glass, as computer simulation predicted. The insertion loss of the straight waveguide was less than 1 dB for 19mm long samples, at both λ = 1.3 μm and 1.55 μm.
−70dBm APD optical feedback receiver at 2.048 Mbit/s
- Author(s): S.G. Methley
- Source: Electronics Letters, Volume 24, Issue 20, p. 1259 –1260
- DOI: 10.1049/el:19880857
- Type: Article
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We demonstrate an optical feedback (OFB) transimpedance receiver employing a GaInAs avalanche photodiode (APD) input device and an Si pin diode feedback element. The highest reported sensitivity of −70dBm at 2.048 Mbit/s was achieved.
Novel concept for highly reliable DC/DC convertors
- Author(s): A.B. Puc ; R. Aissani ; M. Radok
- Source: Electronics Letters, Volume 24, Issue 20, p. 1260 –1262
- DOI: 10.1049/el:19880858
- Type: Article
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A new type of zero switching DC/DC convertor has been developed to meet rigorous requirements for transoceanic optical cables. Its circuit is noteworthy for the small number of components used, and for the pseudoresonant mode of operation at frequencies above 300 kHz.
Vibrating sample method for amplitude and phase measurements with the acoustic microscope
- Author(s): M.G. Somekh ; D. Zhang ; J.M. Rowe
- Source: Electronics Letters, Volume 24, Issue 20, p. 1262 –1263
- DOI: 10.1049/el:19880859
- Type: Article
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The letter describes how the scanning acoustic microscope may be operated in a continuous wave mode. By oscillating the sample by approximately a few hundred angstroms, single frequency amplitude and phase measurements may be obtained with the acoustic microscope. We also show that the method should allow very high frequency quantitative operation of the microscope, where conventional pulse echo methods would fail. A system implementation and preliminary results are presented.
Novel quick-response, digital phase-locked loop
- Author(s): B.C. Sarkar and S. Chattopadhyay
- Source: Electronics Letters, Volume 24, Issue 20, p. 1263 –1264
- DOI: 10.1049/el:19880860
- Type: Article
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The structure of a conventional digital phase-locked loop has been modified to improve its transient response. The superiority of the new loop has been established analytically and by computer simulation results.
Simple S-parameter model for receiving antenna array
- Author(s): K.W. Lo and T.B. Vu
- Source: Electronics Letters, Volume 24, Issue 20, p. 1264 –1266
- DOI: 10.1049/el:19880861
- Type: Article
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A simple S-parameter model is described for a receiving antenna array. The model is useful in studying the effect of system imperfections such as mutual coupling between antenna elements and mismatch of circuit components on the performance of an adaptive array.
Suppression of drain-current overshoot in SOI-MOSFETs using an ultrathin SOI substrate
- Author(s): H. Hazama ; M. Yoshimi ; M. Takahashi ; S. Kambayashi ; H. Tango
- Source: Electronics Letters, Volume 24, Issue 20, p. 1266 –1267
- DOI: 10.1049/el:19880862
- Type: Article
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An n-channel SOI-MOSFET fabricated on a very thin (500 Å) SOI substrate exhibited no detectable drain-current overshoot for various gate turn-on pulses. The reason can be ascribed to the suppression of the floating substrate effect, brought about by the quick decay of excess holes.
New field-effect transistor with quantum wire and modulation-doped heterostructures
- Author(s): K. Tsubaki ; T. Fukui ; Y. Tokura ; H. Saito ; N. Susa
- Source: Electronics Letters, Volume 24, Issue 20, p. 1267 –1269
- DOI: 10.1049/el:19880863
- Type: Article
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A new field-effect transistor, consisting of an AlGaAs/GaAs heterostructure and an (AlAs)0.25(GaAs)0.75 vertical superlattice, is fabricated. It has a large transconductance of 14mS/mm at a gate length of 250 μm, corresponding to a transconductance of 3.5S/mm for 1μm gate length. Hall measurement revealed a novel FET operation mode called ‘velocity modulation’.
Low-temperature gate dielectrics formed by plasma anodisation of silicon nitride
- Author(s): R. Goswami ; J.B. Butcher ; R. Ginige ; J.F. Zhang ; S. Taylor ; W. Eccleston
- Source: Electronics Letters, Volume 24, Issue 20, p. 1269 –1270
- DOI: 10.1049/el:19880864
- Type: Article
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p.
1269
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Silicon nitrides, deposited on silicon by PECVD using an SiH4/NH3 plasma at 300°C, were anodised in an oxygen plasma at 500°C. The resulting dielectric appears to have lower fixed charge, leakage current and interface trap density than the original PECVD nitride, and to have the potential of use as a gate dielectric for MIS devices in VLSI circuits.
Molecular-beam growth of homoepitaxial InSb photovoltaic detectors
- Author(s): T. Ashley ; A.B. Dean ; C.T. Elliott ; C.F. McConville ; C.R. Whitehouse
- Source: Electronics Letters, Volume 24, Issue 20, p. 1270 –1272
- DOI: 10.1049/el:19880865
- Type: Article
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p.
1270
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Molecular-beam epitaxy has been used for the first time to fabricate np junctions in InSb grown onto p-type InSb (100) substrates. Diodes formed by the epitaxial growth of a silicon-doped layer on undoped homoepitaxial material exhibited a bulk generation-recombination-limited R0A value of 105 Ωcm2 and D*λpk of 3 × 1012 cm Hz1/2 W−1 at liquid nitrogen temperature.
High-speed characteristics at high input optical power of GaInAsP electroabsorption modulators
- Author(s): M. Suzuki ; H. Tanaka ; S. Akiba
- Source: Electronics Letters, Volume 24, Issue 20, p. 1272 –1273
- DOI: 10.1049/el:19880866
- Type: Article
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High-speed characteristics at high input optical power levels of GaInAsP double heterostructure electroabsorption modulators are investigated. It is shown that the bandwidth degradation due to high input optical power is strongly dependent on the absorption coefficient. A design to maintain highspeed characteristics under milliwatt range output power operation, and experimental results including a 100km single-mode fibre pulse transmission experiment, are demonstrated.
Scaling ‘ballistic’ heterojunction bipolar transistors
- Author(s): A.F.J. Levi
- Source: Electronics Letters, Volume 24, Issue 20, p. 1273 –1275
- DOI: 10.1049/el:19880867
- Type: Article
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p.
1273
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Reducing length scales in npn heterojunction bipolar transistors leads to unexpected changes in the fundamental limits of device performance. Very high p-type carrier concentrations in the base result in a reduced inelastic electron scattering rate. In addition, there exists a maximum base/collector bias above which ballistic collector transport is not possible, and correct scaling requires the n-type collector contact to be unusually heavily doped.
1.3μm GaInAsP near-travelling-wave laser amplifiers made by combination of angled facets and antireflection coatings
- Author(s): C.E. Zah ; C. Caneau ; F.K. Shokoohi ; S.G. Menocal ; F. Favire ; L.A. Reith ; T.P. Lee
- Source: Electronics Letters, Volume 24, Issue 20, p. 1275 –1276
- DOI: 10.1049/el:19880868
- Type: Article
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1.3μm GaInAsP near-travelling-wave laser amplifiers have been realised by the combination of angled facets and antireflection coatings. Without in situ monitoring on the device itself during dielectric coatings, we can routinely obtain a low effective modal facet reflectivity of 5–8 × 10−4. The devices had an internal gain of 24 ± 1.5 dB for the TE mode and a single-mode fibre coupling loss of 5 dB/facet.
Design equations to realise a broadband hybrid ring or a two-branch guide coupler of any coupling coefficient
- Author(s): J.V. Ashforth
- Source: Electronics Letters, Volume 24, Issue 20, p. 1276 –1277
- DOI: 10.1049/el:19880869
- Type: Article
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p.
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Two design equations are presented to realise a two-branch coupling structure using double quarter-wave sections at the four ports. Various bandwidths are achievable depending on the maximum reflection coefficient and minimum isolation which can be tolerated.
Channel allocation and crosstalk penalty in coherent optical frequency division multiplexing systems
- Author(s): M. Suyama ; T. Chikama ; H. Kuwahara
- Source: Electronics Letters, Volume 24, Issue 20, p. 1278 –1279
- DOI: 10.1049/el:19880870
- Type: Article
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p.
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We theoretically studied the crosstalk penalty of coherent optical frequency division multiplexing systems by varying the intermediate frequency and the channel spacing. Our results, applicable to ASK, PSK and CPFSK modulation formats, provide a quantitative criterion for designing a practical multichannel coherent lightwave system.
Multiprocessor multipath recursive filter structure with no increase in computational complexity
- Author(s): C.-K. Chan and L.-M. Po
- Source: Electronics Letters, Volume 24, Issue 20, p. 1279 –1280
- DOI: 10.1049/el:19880871
- Type: Article
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An efficient delayed multipath recursive filter structure is proposed. Compared with conventional multiprocessor approaches, the new structure can achieve much higher throughput rate owing to its low computational complexity. Experimental results are taken using a system with four digital signal processors (DSPs).
Moment method formulation for asymmetrically excited conducting bodies of revolution
- Author(s): D.B. Davidson and D.A. McNamara
- Source: Electronics Letters, Volume 24, Issue 20, p. 1280 –1282
- DOI: 10.1049/el:19880872
- Type: Article
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p.
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Expressions are given for certain terms required in the moment method formulation for a conducting body of revolution excited by asymmetrical slots in its surface. These appear to be unavailable elsewhere in the literature.
Continuous-wave operation of lateral current injection multiquantum-well laser
- Author(s): A. Furuya ; M. Makiuchi ; O. Wada
- Source: Electronics Letters, Volume 24, Issue 20, p. 1282 –1283
- DOI: 10.1049/el:19880873
- Type: Article
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p.
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Continuous-wave operation of an AlGaAs/GaAs lateral current injection multiquantum-well laser at room temperatures has been achieved by improving the structure and fabrication process. The laser has exhibited a threshold current of 47 mA and a differential quantum efficiency of 11%.
1.2 Gbit/s, 52.5 km optical fibre transmission experiment using OEICs on GaAs-on-InP heterostructure
- Author(s): T. Suzaki ; S. Fujita ; Y. Inomoto ; T. Terakado ; K. Kasahara ; K. Asano ; T. Torikai ; T. Itoh ; M. Shikada ; A. Suzuki
- Source: Electronics Letters, Volume 24, Issue 20, p. 1283 –1284
- DOI: 10.1049/el:19880874
- Type: Article
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p.
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High-performance, long-wavelength OEICs on a GaAs-on-InP heterostructure were fabricated. For the transmitter OEIC, high-speed operation up to 2.4 Gbit/s was achieved, and a receiver sensitivity as high as −26.0 dBm for a 1.2 Gbit/s NRZ signal was realised for the receiver OEIC. To confirm the usefulness of these OEICs for optical fibre networks, a 1.2 Gbit/s optical fibre transmission experiment was successfully carried out over a 52.5 km span.
Switch minimisation for a simple bidirectional network
- Author(s): C. Mitchell and P. Wild
- Source: Electronics Letters, Volume 24, Issue 20, p. 1284 –1286
- DOI: 10.1049/el:19880875
- Type: Article
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The letter describes a method for generating a one-stage, one-sided switching network with the minimum number of switches for any required level of connectivity. The fact that the method generates optimal networks is established by proving appropriate lower bounds. This generalises recent work of Newbury.
New digital phase-lock system for millimetre-wave Gunn oscillators used in radioastronomy
- Author(s): R.S. Arora and R. Becker
- Source: Electronics Letters, Volume 24, Issue 20, p. 1286 –1287
- DOI: 10.1049/el:19880876
- Type: Article
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p.
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A new digital phase-lock system for the frequency stabilisation of millimetre-wave Gunn oscillators is described. The phase-locked loop circuit is built around a new GaAs phase/frequency comparator type 16G044 developed by Gigabit Logic Inc. The digital loop is much simpler, is more reliable, and outperforms its classical analogue counterpart, especially in frequency-agile applications.
Studies of yttrium oxide films prepared by RF magnetron sputtering
- Author(s): L.S. Yip and I. Shih
- Source: Electronics Letters, Volume 24, Issue 20, p. 1287 –1289
- DOI: 10.1049/el:19880877
- Type: Article
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Films of yttrium oxide (Y2O3) were deposited on Si substrates from a Y2O3target by RF magnetron sputtering. MIS capacitors in the form of Al and Y2O3(400 ̇)-Si were then fabricated. The leakage current density was about 10−6 A/cm2 at 1.3 × 106 V/cm, and the breakdown field of the films was about 2.75 × 106 V/cm. The dielectric constant of the sputtered Y2O3 was found to be about 12-12.7.
Condition of modal analysis in time domain of lossy coupled lines
- Author(s): P. Crozat ; A. Zounon ; R. Adde
- Source: Electronics Letters, Volume 24, Issue 20, p. 1289 –1290
- DOI: 10.1049/el:19880878
- Type: Article
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Modal decomposition in the time domain is shown to be applicable to lossy coupled transmission lines of equal width. It is rigorous for two lines and is a good approximation for more than two lines. This allows a direct time-domain simulation of buses made of microstrip lossy lines on chip or on board in digital circuits.
Evaluation of scalar products of repeated integrals by Routh algorithm
- Author(s): T.N. Lucas
- Source: Electronics Letters, Volume 24, Issue 20, p. 1290 –1291
- DOI: 10.1049/el:19880879
- Type: Article
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It is shown that evaluation of Gram matrix entries for model reduction information may be carried out by repeated use of the well known Routh algorithm. This procedure is seen to enhance both the understanding and implementation of a recently suggested approach to model reduction.
Extension of Maliuzhinets' solution to arbitrary permittivity and permeability of coatings on a perfectly conducting wedge
- Author(s): A. Michaeli
- Source: Electronics Letters, Volume 24, Issue 20, p. 1291 –1292
- DOI: 10.1049/el:19880880
- Type: Article
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The scattering of a plane wave is considered at normal incidence on a perfectly conducting wedge whose faces are coated by uniform electrically thin layers of arbitrary permittivity and permeability. Although the face impedances are inhomogeneous in the plane wave spectral representation and are differential operators in the co-ordinate representation, an exact analytical solution for the field is developed by analogy with Maliuzhinets' solution for a wedge with constant face impedances.
High-speed self-aligned InP/GaInAs double heterostructure bipolar transistor with high current-driving capability
- Author(s): H. Schumacher ; L.G. Shantharama ; J.R. Hayes ; R. Bhat ; R. Esagui ; M. Koza
- Source: Electronics Letters, Volume 24, Issue 20, p. 1293 –1294
- DOI: 10.1049/el:19880881
- Type: Article
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A fully self-aligned InP/GaInAs double heterostructure transistor has been fabricated using a substitutional emitter process. The small-signal current gain was typically 10–30 with a fT of 27 GHz. The maximum fT = 27 GHz occurred at current densities of 7 × 104 A cm−2, and the associated fmax was 20 GHz, the highest value obtained for InP-based bipolar transistors to date.
Simulation performance evaluation of SRUC protocol
- Author(s): K. Sardana and M. Ilyas
- Source: Electronics Letters, Volume 24, Issue 20, p. 1294 –1296
- DOI: 10.1049/el:19880882
- Type: Article
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It is found that the SRUC protocol, previously thought to be stable at all traffic levels, suffers from a new adverse phenomenon of ‘protocol oscillations’. Also, some previous simulation results of SRUC are felt not to be correct, and the corresponding results that we believe to be correct instead, are given.
Wavelength discriminator method for measuring dynamic chirp in DFB lasers
- Author(s): N.S. Bergano
- Source: Electronics Letters, Volume 24, Issue 20, p. 1296 –1297
- DOI: 10.1049/el:19880883
- Type: Article
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Wavelength fluctuations in a modulated DFB laser are transformed into intensity fluctuations using a Fabry-Perot interferometer as a wavelength discriminator. Using this method we have measured chirp in several DFB lasers. The results show a high correlation between chirp and regenerator sensitivity degradation when transmitting through dispersive spans.
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