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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 24, Issue 17, 18 August 1988

Volumes & issues:

Volume 24, Issue 17

18 August 1988

20 GHz bandwidth low-noise HEMT preamplifier for optical receivers
Non-bulk Si-O bonding at the Si-SiO2 interface
High-speed digital-to-analogue convertor using passive switched-capacitor algorithmic conversion
  • Author(s): V.F. Dias ; J.E. Franca ; J.C. Vital
  • Source: Electronics Letters, Volume 24, Issue 17, p. 1063 –1065
  • DOI:  10.1049/el:19880721
  • Type: Article
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  • p. 1063 –1065 (3)
    A purely passive parasitic-compensated switched-capacitor circuit is shown to implement a simple signal conversion algorithm consisting of a mere charge division between equal valued capacitors. Such a circuit is the core of the new digital-to-analogue convertor described in this letter, and which is particularly suitable for high-frequency applications. Appropriate design conditions are established to render the overall circuit insensitive to the offset voltage and finite DC gain errors of the amplifier.
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Limits of stable operation of AR-coated semiconductor lasers with strong optical feedback
High-speed Gao.47In0.53As/InP infra-red Schottky-barrier photodiodes
  • Author(s): L. Figueroa ; J.-H. Kim ; S.S. Li ; T.F. Carruthers ; R.S. Wagner
  • Source: Electronics Letters, Volume 24, Issue 17, p. 1067 –1068
  • DOI:  10.1049/el:19880723
  • Type: Article
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  • p. 1067 –1068 (2)
    We report a new high-speed InP-based Ga1−xInxAs infra-red Schottky-barrier photodiode. The photodiodes were fabricated on both p- and n-GaInAs epilayers using Schottky barrier height enhancement technology. The response speed was measured by the impulse response and autocorrelation method; the risetimes of 85ps for p-GaInAs and 180ps for n-GaInAs photodiodes were obtained, which correspond to the 3dB cutoff frequency of 2–4 GHz. The intrinsic response speed was 12GHz for n-GaInAs and 18GHz for p-GaInAs photodiodes based on SPICE simulation with measured device parameters. The photodiodes had the responsivity as high as 0.55 A/W and the quantum efficiency of up to 45% at 1.3–1.6μm without antireflection coating.
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Efficient operation of an Yb-sensitised Er fibre laser pumped in 0.8 μm region
InAsPSb/InAs diode laser emitting in the 2.5μm range
Network experiment using an 8000 GHz tuning-range optical filter
Fabrication of wavelength-flattened tapered couplers using polishing for cladding removal
Outage probability calculations for mobile radio systems with multiple interferers
  • Author(s): K.W. Sowerby  and  A.G. Williamson
  • Source: Electronics Letters, Volume 24, Issue 17, p. 1073 –1075
  • DOI:  10.1049/el:19880728
  • Type: Article
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  • p. 1073 –1075 (3)
    Outage probability calculations are presented for the case when the transmission from a wanted base station is received by a mobile in the presence of multiple cochannel interfering signals for the case where the transmissions suffer both lognormal shadowing and Rayleigh fading. The calculations consider the need to achieve simultaneously both a sufficient SNR and SIR to obtain satisfactory radio reception.
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Polarisation-independent configuration optical amplifier
Characteristic temperature Toof Ga0.83In0.17As0.15Sb0.85/AI0.27Ga0.73As0.02Sb0.98 injection lasers
  • Author(s): A. Joullie ; C. Alibert ; H. Mani ; F. Pitard ; E. Tournie ; G. Boissier
  • Source: Electronics Letters, Volume 24, Issue 17, p. 1076 –1078
  • DOI:  10.1049/el:19880730
  • Type: Article
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  • p. 1076 –1078 (3)
    Stripe injection lasers emitting at 2.18μm at room temperature with a threshold current density Jth = 7−9kA/cm2 have been prepared from Ga0.83In0.17As0.15Sb0.85/Al0.27Ga0.73As0.02Sb0.98 double heterojunctions. The characteristic temperature To of such devices measured between 80 K and 296 K was found to be To = 90 K, essentially controlled by the Auger effect at high temperature.
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Observation of mobility enhancement in ultrathin SOI MOSFETs
  • Author(s): M. Yoshimi ; H. Hazama ; M. Takahashi ; S. Kambayashi ; H. Tango
  • Source: Electronics Letters, Volume 24, Issue 17, p. 1078 –1079
  • DOI:  10.1049/el:19880731
  • Type: Article
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  • p. 1078 –1079 (2)
    The mobility in n-channel SOI MOSFETs exhibits a significant increase as the SOI film becomes thinner than 1000 Å. At a 500 Å SOI thickness, the mobility values are distributed in the 700–1100 cm2/Vs range, which are obviously higher than the value in a bulk MOSFET having an identical doping concentration. The observed mobility enhancement has been explained by a decrease in the vertical electric field, associated with the complete depletion of the SOI film.
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Digital fast acquisition method for phase-lock loops
  • Author(s): R.C.Den Dulk
  • Source: Electronics Letters, Volume 24, Issue 17, p. 1079 –1080
  • DOI:  10.1049/el:19880732
  • Type: Article
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  • p. 1079 –1080 (2)
    A method for enhancing the frequency-acquisition performance of phase-lock loops (PLLs) is presented, which can be used in all PLLs that employ sequential phase detectors. The proposed method always forces the PLL into the phase-acquisition ode by realising a phase detector transfer characteristic with a pseudolinear infinite phase range. Especially in the case of charge-pump PLLs the proposed method is very useful. Practical results show that the acquisition performance can increase by nearly two orders of magnitude.
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Equivalence of optimal slope-sum product discrete and continuous linear electromagnetic radiators
Fast sliding search algorithm for vector quantisation in image coding
Performance improvement in decision feedback equalisers by using ‘soft decision’
Microwave cavity made from high temperature superconductor
High power, CW single-frequency, TEMoo, diode-laser-pumped Nd:YAG laser
Three-step heuristic algorithm for optimal PLA column folding
Lorentzian force type fibre-optic AC magnetic sensor realising frequency-independent sensitivity
New multigate pulsed Doppler system using second-order sampling
Generalised impedance boundary conditions for EM scattering problems
GaInP/AlGaInP double-heterostructure laser grown on a (111)B-oriented GaAs substrate by metalorganic chemical vapour deposition
  • Author(s): M. Ikeda ; E. Morita ; A. Toda ; T. Yamamoto ; K. Kaneko
  • Source: Electronics Letters, Volume 24, Issue 17, p. 1094 –1095
  • DOI:  10.1049/el:19880742
  • Type: Article
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  • p. 1094 –1095 (2)
    Room temperature continuous-wave operation of a Ga0.5In0.5P/(Al0.5Ga0.5)0.5In0.5P double-heterostructure laser grown on a (111)B-oriented GaAs substrate by metalorganic chemical vapour deposition was obtained for the first time. The threshold current was 99 mA. The emission wavelength was around 650 nm, which was about 30 nm shorter than that of a similar laser grown on a (100)-oriented GaAs substrate.
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One-step completely orthogonalisable UEP codes and their soft decision decoding
Assessment of moisture content of fibres and fabrics by measurement of extinction cross-section in an open resonator
Parallel processing for Viterbi algorithm
  • Author(s): Kuei Ann Wen  and  Jau Yien Lee
  • Source: Electronics Letters, Volume 24, Issue 17, p. 1098 –1099
  • DOI:  10.1049/el:19880745
  • Type: Article
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  • p. 1098 –1099 (2)
    Dual-dimensional parallelisation for the Viterbi algorithm is exploited. That is, parallelisation of the decoding procedures within each stage of the trellis and parallelisation of the decoding procedures are expanded to consecutive stages without excessive path memories. Since an arbitrary number of stages can be parallelised, the trade-off between computation speed and degree of integration can be adjusted as required.
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Back side reflection influence on quantum efficiency of photovoltaic devices
Improved self-boot-strapped gain enhancement technique for GaAs amplifiers
Subpicosecond spectral gain dynamics in AlGaAs laser diodes
Pulsed laser emission at 2.3μm in a thulium-doped fluorozirconate fibre
New determination of resonant frequency of circular disc microstrip antenna: application to thick substrate
140 Mbit/s DPSK transmission using an all-optical frequency convertor with a 4000 GHz conversion range
Experimental evaluation of trellis decoding performance on linear block codes in digital mobile radio
  • Author(s): T. Matsumoto
  • Source: Electronics Letters, Volume 24, Issue 17, p. 1107 –1108
  • DOI:  10.1049/el:19880752
  • Type: Article
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  • p. 1107 –1108 (2)
    Word error rate (WER) performance with soft decision decoding of linear block codes using a trellis is investigated in a Rayleigh fading channel. The signal envelopes corresponding to each bit in a received block are sampled and used for estimating the reliability of the bit. The WER performance is evaluated via laboratory experiments using Hamming (7, 4) code. A great improvement in WER performance can be achieved over conventionally-used minimum distance decoding.
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AlGaAs/GaAs HBT dynamic frequency divider constructed of a single d type flip-flop
  • Author(s): Y. Yamauchi ; K. Nagata ; O. Nakajima ; H. Ito ; T. Nittono ; T. Ishibashi
  • Source: Electronics Letters, Volume 24, Issue 17, p. 1109 –1110
  • DOI:  10.1049/el:19880753
  • Type: Article
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  • p. 1109 –1110 (2)
    A new dynamic frequency divider circuit operated by a single D-type flip-flop was designed and fabricated utilising AlGaAs/GaAs heterojunction bipolar transistors (HBTs). The circuit was constructed as a divide-by-four circuit combined with a static divide-by-two circuit for a second stage. A toggle frequency range from 18 to 26.5 GHz was obtained for a total power dissipation of 315 mW at a power supply voltage of 7 V.
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Four new runlength constrained recording codes
Continuous-wave oscillation of a monomode ytterbium-doped fibre laser
Intrinsic limitation of transconductance in extremely short silicon MOS transistors
Observation of high cn2 and turbulent path length on OTS space-Earth link
  • Author(s): P. Basili ; P. Ciotti ; G. D'Auria ; P. Ferrazzoli ; D. Solimini
  • Source: Electronics Letters, Volume 24, Issue 17, p. 1114 –1116
  • DOI:  10.1049/el:19880757
  • Type: Article
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  • p. 1114 –1116 (3)
    Simple models have been used to estimate characteristic height and intensity of tropospheric refractive turbulence from fluctuations of the field amplitude received by two antennas of diverse sizes on the OTS space-Earth path. Data refer to particular events of high scintillation, probably associated with the presence of nonprecipitating clouds, and yield elevated values of cn2.
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Analytical model for semiconductor laser amplifiers in coherent optical systems
Erratum: Asymptotic formula for elliptic function modulus
Erratum: Improved figure of merit for noise in avalanche photodiodes
Erratum: GaAs/AlGaAs multiple quantum well pin diodes grown by selective area epitaxy

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