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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 23, Issue 4, 12 February 1987

Volumes & issues:

Volume 23, Issue 4

12 February 1987

Y-junctions in dielectric waveguides using very wide-aperture angles
  • Author(s): A. Prieto ; J. Rodríguez ; M.A. Solano
  • Source: Electronics Letters, Volume 23, Issue 4, p. 137 –138
  • DOI:  10.1049/el:19870096
  • Type: Article
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  • p. 137 –138 (2)
    In the letter symmetrical Y-junctions made of rectangular dielectric guides are studied theoretically and experimentally. Using the effective dielectric constant method (EDCM) we transform the dielectric guides into equivalent slabs; then the junction is analysed as a discontinuity. The theoretical prediction agrees very well with the experimental results. Modified guides, which greatly improve the transmission coefficient, were then studied.
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Transimpedance optical preamplifier with a very low input resistance
Development of gate-lag effect on GaAs power MESFETs during aging
CMOS/SIMOX devices having a radiation hardness of 2 Mrad(Si)
Guided-wave optical chip-to-chip interconnections
Nitrogen-related absorption bands in optical fibres
Effect of support strut diffraction on reflector surface profile assessment
  • Author(s): P. Kerbyson ; A.P. Anderson ; J.C. Bennett
  • Source: Electronics Letters, Volume 23, Issue 4, p. 146 –147
  • DOI:  10.1049/el:19870102
  • Type: Article
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  • p. 146 –147 (2)
    The phase-imaging properties of microwave holographic processing are used to provide an inward-looking reconstruction of support strut diffraction and its effect on reflector surface profile assessment. Measured near-field data are employed to illustrate the contribution made by the support strut geometry to the apparent profile error for a 2.5 m reflector antenna operating at 10 GHz. The relative significance of real profile errors and those deriving from strut effects are studied by using a diffraction model. It is concluded that certain configurations of support struts can give rise to significant modification of the effective profile error distribution.
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Shear-wave magnetometry using metallic glass ribbon
Quadratic forms for performance indices of symmetrical and antisymmetrical linear arrays
Millimetre-wave performance of state-of-the-art MESFET, MODFET and PBT transistors
  • Author(s): R.J. Trew  and  M.B. Steer
  • Source: Electronics Letters, Volume 23, Issue 4, p. 149 –151
  • DOI:  10.1049/el:19870105
  • Type: Article
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  • p. 149 –151 (3)
    It has recently been shown that, in addition to parasitics, the dipole domain which forms in FET-type devices produces a complex conjugate pole-pair which leads to a 12dB/octave gain roll-off in the millimetre-wave region. As a result the actual Fmax of millimetre-wave transistors is considerably less than that determined from the commonly used extrapolation of microwave frequency gain measurements at 6dB per octave roll-off. Here device models are used to compare the millimetre-wave performance of state-of-the-art MESFET, MODFET and PBT transistors. A parametric study indicates that frequency performance is particularly sensitive to drain parasitics.
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Interferometric measurements of chromatic and polarisation mode dispersion in highly birefringent single-mode fibres
Optically excited resonant diaphragm pressure sensor
Linewidth and FM characteristics of a distributed feedback laser monolithically integrated with a tunable external cavity
Gain enhancement technique for differential pairs
Application of AlGaAs/GaAs HBTs for wideband direct-coupled amplifiers
Microbending losses of bow-tie and similar anisotropic fibres
  • Author(s): Chen Yijiang  and  Huang Hung-Chia
  • Source: Electronics Letters, Volume 23, Issue 4, p. 157 –159
  • DOI:  10.1049/el:19870111
  • Type: Article
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  • p. 157 –159 (3)
    In the letter the microbending behaviour of bow-tie fibres is investigated theoretically. Our results for the practically existing case of unequal core and cladding anisotropy agree satisfactorily, in a statistical sense, with the published experimental data. In the ideal case of equal core and cladding anisotropy, our results confirm the prediction by Snyder and Rühl that the polarising behaviour of a long bow-tie fibre with microbends is caused by the ‘small field’ effect. The related but different problem concerning bow-tie macrobends is treated in another letter.
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MacRobends of bow-tie fibres with constant curvature
  • Author(s): Chen Yijiang  and  Huang Hung-Chia
  • Source: Electronics Letters, Volume 23, Issue 4, p. 159 –160
  • DOI:  10.1049/el:19870112
  • Type: Article
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  • p. 159 –160 (2)
    The letter treats macrobends of bow-tie fibres with constant curvature, using our previously published work as the theoretical building block. In the practical case of unequal core and cladding anisotropy, there exists a single-polarisation window which shifts towards the shorter-wavelength range as the bend radius decreases. Also treated theoretically is the extinction ratio against bend orientation. Unexpectedly, it is found that, if equal core and cladding anisotropy are assumed in the theoretical analysis, then, unlike the ideal case of a straight anisotropic fibre, the differential losses virtually disappear in a bent bow-tie fibre with constant curvature.
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Mode dispersion for optical fibres of arbitrary cross-section
Resonant tunnelling condition in a one-dimensional rectangular double-barrier structure
DC ionised field quantities as influenced by coronating conductor surface gradient
3.0 ps switching operation in all-Nb Josephson logic gates
Fault detection in RNS systolic arrays
  • Author(s): M. Taheri ; G.A. Jullien ; W.C. Miller
  • Source: Electronics Letters, Volume 23, Issue 4, p. 165 –166
  • DOI:  10.1049/el:19870117
  • Type: Article
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  • p. 165 –166 (2)
    The letter discusses simple techniques for the implementation of fault detection in residue number system (RNS) arithmetic modules used in systolic arrays. The technique centres around a recently developed linear systolic structure, and does not require a redundant residue system for the detection process. It is shown that this structure can be used as the detection process in a fault-correcting RNS system.
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Observations of room-temperature excitons in InGaP/InGaAlP MQW structures
Polarisation-insensitive optical heterodyne receiver for coherent FSK communications
New cut of a quartz resonator with a linear temperature/frequency characteristic
  • Author(s): M. Borissov ; L. Spassov ; E. Yosiffov ; A. Balabanova ; E. Radeva
  • Source: Electronics Letters, Volume 23, Issue 4, p. 169 –171
  • DOI:  10.1049/el:19870120
  • Type: Article
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  • p. 169 –171 (3)
    The letter describes a new cut of quartz resonator with a linear temperature/frequency characteristic used as a sensor for precise temperature measurements. The newly developed thermosensitive quartz resonator has some important advantages: obtaining comparatively easily and reproducibly a precise orientation of the piezoelement, good linearity of the temperature/frequency characteristic and a clear frequency spectrum in a wide temperature interval. The first-order temperature coefficient is 38 parts in 106/deg C and the frequency of operation on the third overtone is about 26.5 MHz at 10°C. That leads to an increase of approximately 1000Hz/deg C, with a sensitivity of 0.0001 deg C. These qualities of the thermosensitive quartz resonator make possible its use in devices for precise temperature measurements.
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Bias-variable characteristics of coupled coplanar waveguide on GaAs substrate
Coded phase-reversal LiNbO3 modulator with bandwidth greater than 20 GHz at 1.3μm wavelength
High-frequency scattering of a Hermite-Gaussian beam mode by a perfectly conducting cylinder
  • Author(s): M. Yokota ; T. Kudou ; O. Fukumitsu
  • Source: Electronics Letters, Volume 23, Issue 4, p. 174 –175
  • DOI:  10.1049/el:19870123
  • Type: Article
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  • p. 174 –175 (2)
    The scattering of a Hermite-Gaussian beam mode by a perfectly conducting cylinder at high frequencies is persented. A higher-orger beam mode is experssed in terms of complex-source-point multipole fields. Using the Watson transformation, the diffraction field in the shodow region is represented by residue series. The incident and reflected beam fields in the illuminated region are asymptotically obtained by the evaluation of the integral using the stationary phase method.
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Gate-oxide integrity of silicon-on-insulator transistors
  • Author(s): T.I. Kamins
  • Source: Electronics Letters, Volume 23, Issue 4, p. 175 –176
  • DOI:  10.1049/el:19870124
  • Type: Article
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  • p. 175 –176 (2)
    The quality of gate oxide grown on thin films of silicon obtained by implanting an oxide layer beneath the surface of a silicon water has been assessed by measuring the initial oxide breakdown strength and the time-dependent dielectric breakdown. Both the initial dielectric strength and the charge-to-breakdown are the same as for oxide grown on bulk wafers, suggesting that the high dislocation density in the silicon films does not catastrophically degrade oxide quality.
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