Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 23, Issue 20, 24 September 1987
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Volume 23, Issue 20
24 September 1987
Integration of GaAS MESFET drivers with GaAs directional-coupler electro-optic modulators
- Author(s): J.H. Abeles ; W.K. Chan ; F.K. Shokoohi ; R. Bhat ; M.A. Koza
- Source: Electronics Letters, Volume 23, Issue 20, p. 1037 –1038
- DOI: 10.1049/el:19870725
- Type: Article
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We demonstrate the first integration of active electronic devices with semiconductor waveguide modulators. By combining ion-implanted GaAs MESFET amplifiers with directional-coupler electro-optic modulators, the DC drive voltage has been reduced by a factor of Āv = 9, making an effective electro-optic figure-of-merit Āvn3r41 for GaAs superior to that of LiNbO3
Simple adaptive algorithm for rejection of interference
- Author(s): Y.-H. Choi and J.-W. Ra
- Source: Electronics Letters, Volume 23, Issue 20, p. 1038 –1040;
- DOI: 10.1049/el:19870726
- Type: Article
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A simple algorithm is presented which does not require inversion of the covariance matrix of received signals. Besides computational simplicity, it has the advantage of reducing the sensitivity to beam pointing error.
Fully ion-implanted abrupt pn junction on semi-insulating InP
- Author(s): K.-W. Wang ; C.L. Cheng ; S.M. Zima
- Source: Electronics Letters, Volume 23, Issue 20, p. 1040 –1041
- DOI: 10.1049/el:19870727
- Type: Article
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We report a fully ion-implanted pn junction using Si for n-implant and P/Be co-implant for a shallow p+ surface layer. C/V measurements indicate abrupt junction behaviour. Mesa diodes were fabricated and showed an ideality factor of two, small leakage current and avalanche breakdown at reverse bias greater than 40 V.
Miniature micromachined Fabry-Perot interferometers in silicon
- Author(s): S.R. Mallinson and J.H. Jerman
- Source: Electronics Letters, Volume 23, Issue 20, p. 1041 –1043
- DOI: 10.1049/el:19870728
- Type: Article
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A new technique for the manufacture of miniature Fabry-Perot interferometers in silicon for use in the near-infra-red region is described. Tuning and parallelism control were achieved electrostatically, yielding low drive voltages and finesses exceeding 90 at 1.4 μm. Such devices will prove useful for laser intracavity elements and wavelength demultiplexers in fibre telecommunication systems.
Pieprzyk's public-key cryptosystem is insecure
- Author(s): Yang Yi Xian
- Source: Electronics Letters, Volume 23, Issue 20, p. 1043 –1045
- DOI: 10.1049/el:19870729
- Type: Article
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The letter breaks a public-key cryptosystem proposed by Pieprzyk in 1985.
450 Hz relative frequency stability in an AlGaAs diode laser
- Author(s): Y.C. Chung and T.M. Shay
- Source: Electronics Letters, Volume 23, Issue 20, p. 1044 –1045
- DOI: 10.1049/el:19870730
- Type: Article
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A commercial AlGaAs diode laser is frequency-locked to a Fabry-Perot interferometer. The temperature stabilisation loop of the diode laser system maintains the relative stability within 11 kHz. When the frequency control loop is closed, the relative frequency stability is improved to 450 Hz.
Biased model reduction by simplified Routh approximation method
- Author(s): G.V.K.R. Sastry and V. Krishnamurthy
- Source: Electronics Letters, Volume 23, Issue 20, p. 1045 –1047
- DOI: 10.1049/el:19870731
- Type: Article
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Model reduction by the simplified Routh approximation method (SRAM) is extended to produce biased models. The method uses only one Routh-type array to generate both numerator and denominator of the kth-order model. Computation of the time moments and Markov parameters of the retained system beforehand and solving the Padé equation for the reduced numerator are not necessary. Numerical examples illustrate the method.
Formant labelling using pole-focused spectra
- Author(s): X.D. Huang ; M.A. Jack ; G. Duncan
- Source: Electronics Letters, Volume 23, Issue 20, p. 1047 –1048
- DOI: 10.1049/el:19870732
- Type: Article
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An algorithm is introduced which labels formants from the peaks of pole-focused spectra. A clustering procedure is first used to produce line segments of possible formants. These can be considered as anchor traces for the later processing.Rule-based labelling is then applied to provide final formant trace estimates. Experimental results show that the proposed algorithm offers improved formant labelling accuracy.
Quantum confined Stark shifts in MOVPE-grown GaAs-AlGaAs multiple quantum wells
- Author(s): M. Whitehead ; G. Parry ; J.S. Roberts ; P. Mistry ; P. Li Kam Wa ; J.P.R. David
- Source: Electronics Letters, Volume 23, Issue 20, p. 1048 –1050
- DOI: 10.1049/el:19870733
- Type: Article
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We report the first observation of clear quantum confined Stark shifts in GaAs-AIGaAs quantum-well devices grown using metal-organic vapour-phase epitaxy.
Simple method to determine microwave phase
- Author(s): P.H. Wu and Qian Min
- Source: Electronics Letters, Volume 23, Issue 20, p. 1050 –1051
- DOI: 10.1049/el:19870734
- Type: Article
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The Kramers-Kronig transform is used to calculate the phase of a reflection coefficient once the frequency dependence of its magnitude is measured. The calculated values agree quite satisfactorily with the measured results, thus making it feasible to use this method in practice to determine microwave phase.
10 GHz optical receiver using a travelling-wave semiconductor laser preamplifier
- Author(s): I.W. Marshall and M.J. O'Mahony
- Source: Electronics Letters, Volume 23, Issue 20, p. 1052 –1053
- DOI: 10.1049/el:19870735
- Type: Article
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A 1.5 μm optical receiver with a bandwidth of 10 GHz has been demonstrated. The receiver used a travelling-wave semiconductor laser preamplifier and had an equivalent input noise of 1 pA/√Hz) with a 3 dB bandwidth of 10 GHz. The estimated sensitivity at 15 Gbit/s was −27 dBm.
Level-shifting differential to single-ended convertor circuits GaAs MESFET implementation
- Author(s): C. Toumazou and D.G. Haigh
- Source: Electronics Letters, Volume 23, Issue 20, p. 1053 –1055
- DOI: 10.1049/el:19870736
- Type: Article
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The letter describes three possible circuits for performing differential to single-ended conversion using gallium arsenide technology, and compares them by analysis confirmed by computer simulation. The circuits can be used to provide a differential input for single-input high-performance gallium arsenide operational amplifiers.
Monolithic photoreceiver integrating GaInAs PIN/JFET with diffused junctions
- Author(s): J.C. Renaud ; L. N'Guyen ; M. Allovon ; F. Heliot ; F. Lugiez ; A. Scavennec
- Source: Electronics Letters, Volume 23, Issue 20, p. 1055 –1056
- DOI: 10.1049/el:19870737
- Type: Article
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A new integrated PIN/JFET using an original three-layer GalnAs structure has been developed in order to optimise both devices separately. Thanks to the good performances and high reliability of individual components, the sensitivity of such monolithic photoreceivers is — 33.7 dBm for a 10−9 bit error rate at 140 Mbit/s.
Efficient photodiode-waveguide coupling for hybrid integrated optical circuits
- Author(s): M. Yamada ; H. Terui ; Y. Yamada ; A. Himeno ; M. Koeayashi
- Source: Electronics Letters, Volume 23, Issue 20, p. 1056 –1057
- DOI: 10.1049/el:19870738
- Type: Article
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A GalnAsP edge-detecting photodiode was coupled with an SiO2-TiO2 single-mode waveguide in a simple hybrid integration scheme. The newly developed edge-detecting photodiode with a window region was used to improve photodiode durability.
Method for analytic subscriber traffic data acquisition in telephone networks
- Author(s): D. Lymberopoulos and G. Kokkinakis
- Source: Electronics Letters, Volume 23, Issue 20, p. 1057 –1059
- DOI: 10.1049/el:19870739
- Type: Article
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A method for fast and economic acquisition of analytic subscriber traffic data in conventional electromechanical telephone exchanges is described. The method is based on a specially designed microprocessor-controlled scanning device and on algorithms constructed according to the statistics of the registered call phases. The method has been successfully implemented in the local telephone network of Patras, Greece.
Improved Prony algorithm to identify multipath components
- Author(s): W.H. Lau ; J. Austin ; E. Vilar
- Source: Electronics Letters, Volume 23, Issue 20, p. 1059 –1060
- DOI: 10.1049/el:19870740
- Type: Article
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An improved Prony algorithm, code-named SVDP (singular value decomposition Prony), is proposed for identifying discrete multipath components. The new technique has been applied to data obtained from both laboratory and field experiments. The superiority of the algorithm in determining the number of rays present, and also in resolving close rays, is demonstrated.
Partitioning for pseudo-exhaustive testing is NP-complete
- Author(s): W. Song ; K.C. Smith ; W.M. Snelgrove
- Source: Electronics Letters, Volume 23, Issue 20, p. 1060 –1062
- DOI: 10.1049/el:19870741
- Type: Article
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In the letter, two schemes of circuit partitioning for pseudo-exhaustive testing are described. The complexities of both are proved to be NP-complete.
Sideband noise of a large phase carrier in interferometric sensors
- Author(s): K.P. Koo ; F. Bucholtz ; A. Dandridge
- Source: Electronics Letters, Volume 23, Issue 20, p. 1062 –1063
- DOI: 10.1049/el:19870742
- Type: Article
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Interferometric sensors using balanced detectors and phase stabilisation schemes remain susceptible to laser intensity noise if phase carrier techniques are employed. An intensity stability of 4 × 10−6 is required for the low-frequency side-band noise to be equivalent to microradian phase shift sensitivity if the phase carrier has a peak phase shift of π/2 rad.
34 Mbit/s optical fibre transmission system experiment at a wavelength of 2.4 μm
- Author(s): R.A. Garnham ; D.G. Cunningham ; W.A. Stallard
- Source: Electronics Letters, Volume 23, Issue 20, p. 1063 –1064
- DOI: 10.1049/el:19870743
- Type: Article
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Data transmission at 34 Mbit/s has been performed over a fluoride glass fibre at a wavelength close to the 2.55 μm minimum-loss wavelength of the fibre, using an externally modulated He-Ne laser and a graded-composition GaInAs photodiode with spectral response optimised for 2.55 μm operation.
Tester architecture for a time-division switch
- Author(s): A. Jajszczyk and J. Tyszer
- Source: Electronics Letters, Volume 23, Issue 20, p. 1064 –1066
- DOI: 10.1049/el:19870744
- Type: Article
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A tester architecture for time-space switches as well as the appropriate testing method are proposed. This architecture makes it possible to detect all stuck-type faults in a digital switch in a reasonable time.
Dependence of interconnection delays on driving mechanism for GaAs-based VLSI
- Author(s): A.K. Goel
- Source: Electronics Letters, Volume 23, Issue 20, p. 1066 –1067
- DOI: 10.1049/el:19870745
- Type: Article
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The dependence of interconnection delays on several different methods has been examined for GaAs-based VLSI.
GaInAs/InP waveguide multiple-quantum-well optical modulator with 9 dB on/off ratio
- Author(s): K. Wakita ; S. Nojima ; K. Nakashima ; Y. Kawaguchi
- Source: Electronics Letters, Volume 23, Issue 20, p. 1067 –1069
- DOI: 10.1049/el:19870746
- Type: Article
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Clear excitonic peak wavelength shifts are obtained with an applied electric field and large on/off ratio optical modulation of long-wavelength light propagating along the plane of GaInAs/InP multiple-quantum-well (MQW) structures grown by metalorganic molecular beam epitaxy (MOMBE). These waveguide MQW optical modulators have a modulation on/off ratio of 8:1 (9 dB) at a driving voltage as low as 5 V operating at a wavelength of 1.55 μm. This measurement is the first step towards faster and higher extinction ratio devices.
Parallel merger
- Author(s): G.S. Liu
- Source: Electronics Letters, Volume 23, Issue 20, p. 1069 –1070
- DOI: 10.1049/el:19870747
- Type: Article
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The letter describes a parallel merger for the sort-merger scheme in a hardware sorter. The technique offers k times the data throughput of conventional hardware k-way mergers.
Characteristics of a two-layer electromagnetically coupled rectangular patch antenna
- Author(s): R.Q. Lee ; K.F. Lee ; J. Bobinchak
- Source: Electronics Letters, Volume 23, Issue 20, p. 1070 –1072
- DOI: 10.1049/el:19870748
- Type: Article
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Experimental results on the characteristics of a two-layer electromagnetically coupled rectangular patch antenna are presented. The variations of pattern shape, 3 dB beamwidth and impedance bandwidth with spacing s between the two layers are studied for s between 0 and 0.37λ0. A relatively high-gain region is found for s between 0.31λ0 and 0.37λ0.
Power spectral density of CMI-coded TV signal transmitted through fibre-optic heterodyne system
- Author(s): N. Malaviya and G. Jauhari
- Source: Electronics Letters, Volume 23, Issue 20, p. 1072 –1073
- DOI: 10.1049/el:19870749
- Type: Article
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An expression is derived for the power spectral density of a coded mark inversion (CMI) TV signal transmitted through a fibre-optic heterodyne system. An illustrative example is given, and its power spectral density has been computed numerically.
Refractory self-aligned gate technology for GaAs microwave FETs and MMICS
- Author(s): A.E. Geissberger ; R.A. Sadler ; E.L. Griffin ; I.J. Bahl ; M.L. Balzan
- Source: Electronics Letters, Volume 23, Issue 20, p. 1073 –1075
- DOI: 10.1049/el:19870750
- Type: Article
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A new refractory self-aligned gate technology for fabrication of field-effect transistors (FETs) with low gate resistance and improved breakdown voltage is described. The asymmetric-n+, planarised-gate process uses 1 μm optical lithography to produce 0.5 μm-gate-length FETs with very low gate resistance. The process is suitable for high-volume small-signal and power MMIC production.
Optical FSK transmission system using a phase-diversity receiver
- Author(s): M.J. Pettitt ; D. Remedios ; A.W. Davis ; A. Hadjifotiou ; S. Wright
- Source: Electronics Letters, Volume 23, Issue 20, p. 1075 –1076
- DOI: 10.1049/el:19870751
- Type: Article
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A coherent optical transmission system has been demonstrated using commercial DFB lasers as both transmitter and local oscillator. A receiver sensitivity of −51.8dBm was measured at a data rate of 140Mbit/s. The system employs FSK modulation and a three-port, phase-diversity receiver. The effect of source linewidth on receiver bandwidth requirements has been examined.
Diode-laser-pumped operation of an Er3+-doped single-mode fibre laser
- Author(s): L. Reekie ; I.M. Jauncey ; S.B. Poole ; D.N. Payne
- Source: Electronics Letters, Volume 23, Issue 20, p. 1076 –1078
- DOI: 10.1049/el:19870752
- Type: Article
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We report the first operation of an Er3+-doped single-mode fibre laser operating around 1.6μm pumped by a CW AIGaAs diode laser. An output power of 130μW was obtained with a lasing threshold of 3 mW.
Modulation frequency-shift technique for dispersion measurements in optical fibres using LEDs
- Author(s): L. Thevenaz and J.-P. Pellaux
- Source: Electronics Letters, Volume 23, Issue 20, p. 1078 –1079
- DOI: 10.1049/el:19870753
- Type: Article
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Reliable phase-shift measurements in optical fibres were performed by downshifting the modulation frequency of the optical signal to the low-frequency range before detection. This technique maintains the full resolution of the high-frequency modulation and increases the sensitivity allowing accurate group delay measurements in single-mode fibres over a 300 nm spectral range using a single LED.
Molecular-beam-epitaxial growth of GaAs on high-temperature hydrogen-annealed (100) silicon
- Author(s): T.P. Humphreys ; K. Das ; S.M. Bedair ; J.J. Wortman ; N. Parikh ; W.K. Chu ; N. El-Masry ; J.C.L. Tarn
- Source: Electronics Letters, Volume 23, Issue 20, p. 1079 –1081
- DOI: 10.1049/el:19870754
- Type: Article
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Superior-quality GaAs epitaxial layers have been grown by molecular beam epitaxy on high-temperature hydrogen-ambient annealed silicon (100) substrates. Rutherford back-scattering and channelling of 2.1 MeV He+ ions and transmission electron microscopy techniques have been used to characterise these layers. Comparative studies indicate that the epitaxial layers grown on hydrogen-ambient annealed substrates have a superior surface morphology and a lower interface disorder than those on chemically cleaned (100) substrates. Cross-sectional transmission electron micrographs show the presence of a high density of threading dislocations, stacking faults and twins in the GaAs layers grown on the chemically cleaned silicon (100) substrates. In contrast, a significant reduction in the density of these defects is observed in the layers grown on the preannealed substrates.
Birefringence in stress-applied polarisation-maintaining optical fibres
- Author(s): Chen Zhihao and Yao Huihai
- Source: Electronics Letters, Volume 23, Issue 20, p. 1081 –1082
- DOI: 10.1049/el:19870755
- Type: Article
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Remarkably simple, analytical expressions are presented for the calculation of the birefringence in stress-applied polarisation-maintaining optical fibres. The method is based on the vector analysis of propagation constants in dielectric waveguides with perturbed refractive-index profile. It is shown that present results agree well with the results obtained using the finite-element method.
Precise optical heterodyne beat frequency from laser diodes locked to atomic resonances
- Author(s): B. Villeneuve ; N. Cyr ; M. Tetu
- Source: Electronics Letters, Volume 23, Issue 20, p. 1082 –1083
- DOI: 10.1049/el:19870756
- Type: Article
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Semiconductor lasers locked to atomic resonances provide precise optical frequencies with very good long-term stability. This property can be used in coherent optical communications for obtaining a well defined IF frequency (or frequencies) at the receiver. The letter deals with the optical heterodyne detection of a precise 6.54 GHz frequency offset derived from the hyperfine structure of rubidium 87
Novel optically pumped electronic mixer using a Mott diode structure
- Author(s): N.J. Gomes and A.J. Seeds
- Source: Electronics Letters, Volume 23, Issue 20, p. 1084 –1085
- DOI: 10.1049/el:19870757
- Type: Article
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A Mott diode structure is proposed for use as an optically pumped electronic mixer. Under forward bias, the structure should combine good responsivity with a nonlinear I/V characteristic for mixing. Predictions from an accurate mixer analysis indicate that efficient frequency conversion should be achievable at microwave frequencies.
20 GHz frequency-divider silicon bipolar MMIC
- Author(s): I. Kipnis
- Source: Electronics Letters, Volume 23, Issue 20, p. 1085 –1087
- DOI: 10.1049/el:19870758
- Type: Article
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A regenerative frequency divider for input signals up to 20 GHz and division-bandwidths in excess of 50% below 6 GHz is reported. Its performance as a divide-by-2, by-3, by-4 and under pulsed conditions is reviewed. The divider consists of an fT = 10 GHz, fmax= 20 GHz silicon bipolar monolithic microwave integrated circuit (MMIC) and an external feedback network.
Single-mode fibre Y-junction beam-splitter
- Author(s): J.D. Minelly and D. Hussey
- Source: Electronics Letters, Volume 23, Issue 20, p. 1087 –1088
- DOI: 10.1049/el:19870759
- Type: Article
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The fabrication, operation and performance of a wavelength-independent single-mode fibre beam-splitter is discussed. Equal power splitting over an indefinitely broad spectral range is possible with this device, which has a tapered Y-junction configuration.
Tunable optical-wavelength conversion using a multielectrode distributed-feedback laser diode with a saturable absorber
- Author(s): H. Kawaguchi ; K. Oe ; H. Yasaka ; K. Magari ; M. Fukuda ; Y. Itaya
- Source: Electronics Letters, Volume 23, Issue 20, p. 1088 –1090
- DOI: 10.1049/el:19870760
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Optical wavelength conversion with tunability greater than 2.2 Å is demonstrated for the first time using a multielectrode DFB LD with a saturable absorber. This device can operate with both TE- and TM-polarised optical input. The device also has optical gain and pulse-shaping functions.
Generation of short pulses from CW light by influence of crossphase modulation (CPM) in optical fibres
- Author(s): D. Schadt and B. Jaskorzynska
- Source: Electronics Letters, Volume 23, Issue 20, p. 1090 –1091
- DOI: 10.1049/el:19870761
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We demonstrate that crossphase modulation, imposed by a train of pulses on a weak CW signal in the wavelength region of anomalous fibre dispersion, can induce the generation of short pulses (~1 ps) at the signal wavelength
Surface plasmon microscopy
- Author(s): E. Yeatman and E.A. Ash
- Source: Electronics Letters, Volume 23, Issue 20, p. 1091 –1092
- DOI: 10.1049/el:19870762
- Type: Article
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The use of surface plasmon resonance measurements for the imaging of surfaces has been investigated. Images of dielectric patterns deposited on silver films are presented, with thickness sensitivity of about 3 Å and a lateral resolution of about 25μm.
Generation of transconductance-grounded-capacitor filters by signal-flow-graph methods for VLSI implementation
- Author(s): M.A. Tan and R. Schaumann
- Source: Electronics Letters, Volume 23, Issue 20, p. 1093 –1094
- DOI: 10.1049/el:19870763
- Type: Article
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A signal-flow-graph method for designing arbitrary transconductance-grounded-capacitor filters is described. The procedure is shown to result in a very methodical design and layout suitable for MOS VLSI technology. For LC ladder simulations, the method requires only capacitor arrays and all identical transconductances
GaInAs PIN photodiodes grown on silicon substrates for 1.55 μm detection
- Author(s): P.D. Hodson ; R.R. Bradley ; J.R. Riffat ; T.B. Joyce ; R.H. Wallis
- Source: Electronics Letters, Volume 23, Issue 20, p. 1094 –1095
- DOI: 10.1049/el:19870764
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We report the first GalnAs PIN photodiodes to be fabricated on silicon substrates. Superlattice buffer layers were used to accommodate the lattice parameter mismatch. Reverse leakage currents of ̃70nA at – 1 V bias were measured for 105μm-diameter mesa diodes. The uncoated external quantum efficiency at a wavelength of 1.55μmwas 30%.
Optical third-harmonic generation from poly(p-phenylenevinylene) thin films
- Author(s): T. Kaino ; K.-I. Kubodera ; S. Tomaru ; T. Kurihara ; S. Saito ; T. Tsutsui ; S. Tokito
- Source: Electronics Letters, Volume 23, Issue 20, p. 1095 –1097
- DOI: 10.1049/el:19870765
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Third-harmonic generation (THG) measurements have been made on poly(p-phenylenevinylene) thin films. The third-order susceptibility was evaluated to be x(3)= 7.8 × 10−12esuat 1.85μm wavelength.
Fundamental error of recent coupled mode formulations
- Author(s): A.W. Snyder ; A. Ankiewicz ; A. Altintas
- Source: Electronics Letters, Volume 23, Issue 20, p. 1097 –1098
- DOI: 10.1049/el:19870766
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We demonstrate that the Hardy-Streifer coupled mode for-mulation and similar forms, including those of Haus et al. and Chuang, are incorrect unless restricted to TE modes in planar geometry. The error becomes arbitrarily large with increasing core refractive index, while the error in th conventional (first-order) theory approaches zero in the limit of weak coupling.
Four-transistor continuous-time MOS transconductor
- Author(s): M. Ismail
- Source: Electronics Letters, Volume 23, Issue 20, p. 1099 –1100
- DOI: 10.1049/el:19870767
- Type: Article
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p.
1099
–1100
(2)
A general condition for nonlinearity cancellation in the recently reported four-transistor continuous-time MOS transconductor is presented. It is shown that the circuit possesses a high degree of versatility and can operate with different sets of signal excitations using enhancement or depletion transistors.
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