Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 22, Issue 8, 10 April 1986
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Volume 22, Issue 8
10 April 1986
Reduction of mode selectivity in DFB lasers with one cleaved facet by a tapered refractive-index profile
- Author(s): H. Soda ; Y. Kotaki ; H. Ishikawa ; H. Imai
- Source: Electronics Letters, Volume 22, Issue 8, p. 401 –402
- DOI: 10.1049/el:19860272
- Type: Article
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–402
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The mode selectivity in DFB lasers with one cleaved facet is analysed considering a tapered refractive-index profile along a laser axis. As a result, it becomes clear that in strong coupled DFB lasers the mode selectivity is reduced remarkably by such a profile.
Completely fused tapered couplers: comparison of theoretical and experimental results
- Author(s): J.M.P. Rodrigues ; T.S.M. Maclean ; B.K. Gazey ; J.F. Miller
- Source: Electronics Letters, Volume 22, Issue 8, p. 402 –404
- DOI: 10.1049/el:19860273
- Type: Article
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–404
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Completely fused single-mode fibre couplers, characterised by an almost circular cross-section at the waist, have been fabricated. An analytic model which takes into consideration the taper and variable aspect ratio of the coupler has been developed. Good agreement is obtained between the theoretical and experimental values.
Transmission performance impairment due to degradation of optical spectrum in 1.55 μm DFB laser
- Author(s): S. Yamamoto ; H. Sakaguchi ; Y. Iwamoto
- Source: Electronics Letters, Volume 22, Issue 8, p. 404 –405
- DOI: 10.1049/el:19860274
- Type: Article
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–405
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The dynamic optical spectrum and optical transmission characteristics of a 1.55 μm conventional distributed feedback (DFB) laser with a side mode were analysed. The laser used in the experiment came to operate in two modes although initially it had operated in single-mode. When this laser was directly modulated by setting the bias current around the threshold, the mode switching between a main mode and a side mode was observed to be similar to mode partitioning in Fabry-Perot (FP) lasers. The mode switching affects considerably the bit error rate performance of 113 km single-mode fibre transmission at 140 Mbit/s.
Comment: Dark noise of Ga0.47In0.53As photoconductive detectors
- Author(s): Tran Van Muoi
- Source: Electronics Letters, Volume 22, Issue 8, p. 405 –406
- DOI: 10.1049/el:19860275
- Type: Article
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Reply: Dark noise of Ga0.47In0.53As photoconductive detectors
- Author(s): A. Antreasyan
- Source: Electronics Letters, Volume 22, Issue 8, page: 406 –406
- DOI: 10.1049/el:19860276
- Type: Article
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Observation of resonant tunnelling via first excited level in double-barrier diodes
- Author(s): T. Nakagawa ; H. Imamoto ; N.J. Kawai ; T. Kojima ; K. Ohta
- Source: Electronics Letters, Volume 22, Issue 8, page: 406 –406
- DOI: 10.1049/el:19860277
- Type: Article
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Two clear resonance peaks for each bias direction accompanying negative differential resistance are observed in the Al0.3Ga0.7/GaAs/Al0.3Ga0.7As double-barrier diode of 24 to 26 monolayer well thickness. These two peaks are found to be the resonant tunnelling through the ground and first excited energy levels in the well.
Analysis of the parasitic effective capacitance of buried-heterostructure lasers
- Author(s): K. Kamite ; M. Yano ; T. Tanahashi ; H. Ishikawa ; S. Yamakoshi ; H. Imai
- Source: Electronics Letters, Volume 22, Issue 8, p. 407 –409
- DOI: 10.1049/el:19860278
- Type: Article
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The impedance of a BH-type laser has been evaluated up to 4 GHz. The capacitance decreases drastically with increasing frequency, and hence the cutoff frequency is higher than that predicted by the capacitance measured at several megahertz.
Phase modulation to amplitude modulation conversion of CW laser light in optical fibres
- Author(s): A.R. Charaplyvy ; R.W. Tkach ; L.L. Buhl ; R.C. Alferness
- Source: Electronics Letters, Volume 22, Issue 8, p. 409 –411
- DOI: 10.1049/el:19860279
- Type: Article
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–411
(3)
We have measured the induced amplitude modulation of sinusoidally phase-modulated CW 1.5 μm laser light propagating in a single-mode fibre. Amplitude modulation approaching 100% was observed for light phase-modulated at 4 GHz and transmitted through 50 km of fibre. PM-AM conversion produces a power penalty in coherent transmission systems.
Nonlinear prism coupling in waveguiding structures deposited on to semiconductor-doped glass
- Author(s): S. Patela ; H. Jerominek ; C. Delisle ; R. Tremblay
- Source: Electronics Letters, Volume 22, Issue 8, p. 411 –412
- DOI: 10.1049/el:19860280
- Type: Article
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–412
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The fabrication procedure and properties of an optical nonlinear guided-wave structure are reported. The structure consists of a thin film of Corning 7059 glass deposited by RF planar magnetron sputtering on a surface of CdSxSe1−x doped glass. The limiting action in power-dependent prism coupling into the structure is described.
Transient effect in thinned silicon-on-insulator devices
- Author(s): D.P. Vu
- Source: Electronics Letters, Volume 22, Issue 8, p. 412 –413
- DOI: 10.1049/el:19860281
- Type: Article
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p.
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–413
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In thin-film silicon-on-insulator devices, electrostatic coupling between the two Si-SiO2 interfaces gives rise to transient drain-source current. This effect should be considered in devising three-dimensional circuits.
Balanced dual-detector receiver for optical heterodyne communication at Gbit/s rates
- Author(s): B.L. Kasper ; C.A. Burrus ; J.R. Talman ; K.L. Hall
- Source: Electronics Letters, Volume 22, Issue 8, p. 413 –415
- DOI: 10.1049/el:19860282
- Type: Article
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–415
(3)
A balanced dual-detector receiver which requires low local-oscillator power has been designed and fabricated for optical heterodyne detection at 1·5 μm wavelength and Gbit/s rates. The receiver consists of two InGaAs PIN photodiodes connected with opposite polarities to a high-impedance GaAs FET amplifier. Frequency response, noise suppression and noise spectrum measurements are reported.
New monolithic AGC amplifier stabilising output DC level for 560 Mbit/s optical transmission
- Author(s): T. Kinoshita ; K. Yamashita ; M. Maeda ; Y. Sekine
- Source: Electronics Letters, Volume 22, Issue 8, p. 415 –416
- DOI: 10.1049/el:19860283
- Type: Article
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–416
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A new AGC amplifier stabilising the output DC level is proposed and monolithically integrated using 1 μm Si-bipolar IC technology. First, it is proven that the proposed AGC amplifier is about ten times superior to the conventional one in regard of output DC level stability. Next, it is confirmed that the IC, which exhibits a 720 MHz bandwidth, 39 dB maximum gain and 60 dB gain dynamic range, is feasible for 560 Mbit/s optical transmission.
Infra-red electroluminescence from CdxHg1−xTe diodes
- Author(s): H.A. Tarry
- Source: Electronics Letters, Volume 22, Issue 8, p. 416 –418
- DOI: 10.1049/el:19860284
- Type: Article
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–418
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Room-temperature infra-red emission (λ ~ 3 μm) is reported for the first time from forward-biased p-n junctions in CdxHg1-xTe (x ~ 0.3). Efficiencies are as high as 0.2% and the spectrum width is 0.3 μm. A simple RF-modulated communications link has been demonstrated using both source and detector at room temperature.
Distributed temperature sensor using Nd3+ -doped optical fibre
- Author(s): M.C. Farries ; M.E. Fermann ; R.I. Laming ; S.B. Poole ; D.N. Payne ; A.P. Leach
- Source: Electronics Letters, Volume 22, Issue 8, p. 418 –419
- DOI: 10.1049/el:19860285
- Type: Article
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–419
(2)
We report the measurement of temperature distribution with an Nd3+ -doped multimode optical fibre. By exploiting the temperature-sensitive absorption bands of the doped-glass core, temperature was measured to an accuracy of 2°C over the range −50°C to 100°C. A spatial resolution of 15 m over a fibre length of 140 m was obtained.
AlGaAs/InGaAs/GaAs strained-layer heterojunction bipolar transistors by molecular beam epitaxy
- Author(s): G.J. Sullivan ; P.M. Asbeck ; M.F. Chang ; D.L. Miller ; K.C. Wang
- Source: Electronics Letters, Volume 22, Issue 8, p. 419 –421
- DOI: 10.1049/el:19860286
- Type: Article
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–421
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The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with In content according to theory.
Semiconductor laser homodyne optical phase-locked-loop
- Author(s): D.J. Malyon ; D.W. Smith ; R. Wyatt
- Source: Electronics Letters, Volume 22, Issue 8, p. 421 –422
- DOI: 10.1049/el:19860287
- Type: Article
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–422
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A linear homodyne optical phase-locked-loop has been demonstrated using a semiconductor local oscillator laser and has been shown to exhibit good dynamic response to environmental influences. The receiver phase noise in this experiment was dominated by Rayleigh backscatter from the fibre link.
Simple approach to analysis of switched-capacitor circuits with nonideal op-amps
- Author(s): V.I. Georgiev and K.P. Stantchev
- Source: Electronics Letters, Volume 22, Issue 8, p. 422 –424
- DOI: 10.1049/el:19860288
- Type: Article
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A possible method for the simulation of nonideal op-amps with a finite gain and bandwidth by means of an equivalent SC circuit, containing ideal components, is presented. The approach is extended by the case of an op-amp with non-switched input SC building blocks.
Novel realisation of convertor-type gyrator
- Author(s): S. Osowski
- Source: Electronics Letters, Volume 22, Issue 8, p. 424 –425
- DOI: 10.1049/el:19860289
- Type: Article
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–425
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A new circuit realising any convertor-type gyrator has been proposed. Some practical results of the application of the circuit to reactive element simulation have been presented.
Measurement of spectral linewidth of AlGaAs/GaAs distributed feedback lasers
- Author(s): K. Kojima ; S. Noda ; S. Tai ; K. Kyuma ; T. Nakayama
- Source: Electronics Letters, Volume 22, Issue 8, p. 425 –427
- DOI: 10.1049/el:19860290
- Type: Article
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–427
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The spectral linewidth of AlGaAs/GaAs distributed feedback (DFB) lasers was measured for the first time. The linewidth-power product decreased with temperature, which indicates that the relative position of the oscillation wavelength and the gain peak strongly affects the linewidth of DFB lasers.
Low-threshold two-dimensional distributed Bragg reflector lasers
- Author(s): T. Nigami ; I. Suemune ; Y. Kan ; M. Yamanishi
- Source: Electronics Letters, Volume 22, Issue 8, p. 427 –428
- DOI: 10.1049/el:19860291
- Type: Article
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–428
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A new type of two-dimensional distributed Bragg reflector laser (2D-DBR) has been proposed and demonstrated based on analysis of earlier lasers. Threshold currents are 1/9th of earlier values and differential quantum efficiency is up by 2.5 times, while keeping the highly collimated output beam characteristics (0.9° × 3.2°).
Reliability of 1.3 μm V-grooved inner-stripe laser diodes under high-power operation
- Author(s): S. Oshiba ; A. Matoba ; H. Horikawa ; Y. Kawai ; M. Sakuta
- Source: Electronics Letters, Volume 22, Issue 8, p. 428 –429
- DOI: 10.1049/el:19860292
- Type: Article
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–429
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Aging tests of 1.3 μm laser diodes were performed under extremely high power levels up to 85% of the maximum CW output powers. We have verified high reliability under high power levels as high as 75% of the maximum CW output powers at room temperature. The median lifetime is estimated to be 7×104 h at 75% of the maximum CW output power.
Improving the dynamic range of a CVSD coder
- Author(s): V.D. Mytri and A.P. Shivaprasad
- Source: Electronics Letters, Volume 22, Issue 8, p. 429 –430
- DOI: 10.1049/el:19860293
- Type: Article
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The letter describes a method of improving the dynamic range of a continuously variable slope delta modulator (CVSD). This is achieved by modifying the basic step size δ0 Compared to the CVSD algorithm, the modified CVSD (MCVSD) algorithm yields about 15–20 dB dynamic range improvement without degrading the peak SNR and the bit error rate tolerance.
Use of sacrificial spacers for fabricating LDD transistors in a CMOS process
- Author(s): T.Y. Huang ; I.W. Wu ; J.Y. Chen
- Source: Electronics Letters, Volume 22, Issue 8, p. 430 –432
- DOI: 10.1049/el:19860294
- Type: Article
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The use of sacrificial spacers for LDD transistors in a CMOS process is described. LPCVD nitride or PSG is employed as the sidewall-spacer material which is selectively etched off after the LDD's n-/n+ junction formation, thus allowing subsequent shallow p+ implant self-aligning to the polysilicon gate. Deeper n-/n+ junctions with adequate drain/gate overlap for n-channel LDD transistors to minimise hot-electron effects can then be made while simultaneously the shallow p+ junction with high punch-through immunity is preserved for p-channel transistors. The conflicting diffusion requirements in forming n-/n+ and p+ source-drain junction depths are therefore decoupled.
Stability of linear discrete-time systems
- Author(s): S. Puthenpura ; N.K. Sinha ; B.P. Mohanty
- Source: Electronics Letters, Volume 22, Issue 8, p. 432 –434
- DOI: 10.1049/el:19860295
- Type: Article
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A computationally efficient and simple method is suggested for determining the stability of digital systems. The new method is then compared with other existing methods.
Oxygen influence on drawing-induced defect centres and radiation-induced loss in pure silica optical fibres
- Author(s): Y. Hibino ; H. Hanafusa ; F. Yamamoto
- Source: Electronics Letters, Volume 22, Issue 8, p. 434 –435
- DOI: 10.1049/el:19860296
- Type: Article
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Drawing-induced defect centres are investigated in pure silica optical fibres drawn from the preforms consolidated in O2-including atmospheres. The drawing-induced E′ centres decrease while the peroxy radicals increase with increasing flow rate of O2 into the consolidation furnance. The γ-ray-induced loss of these fibres is also examined.
Avalanche GaAlAs/GaAs heterojunction phototransistor with optoelectronic bistability
- Author(s): Huang Xiaokang ; Wang Zuning ; Sun Baoyin
- Source: Electronics Letters, Volume 22, Issue 8, p. 435 –436
- DOI: 10.1049/el:19860297
- Type: Article
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435
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Optoelectronic bistability in an avalanche GaAlAs/GaAs HPT which operates in the negative resistance region is reported for the first time. Theoretical and experimental results are presented. This device can be used in regulation, differential amplification and optical memory signals.
Application of space-time duality to recursive structures
- Author(s): N. Farahati
- Source: Electronics Letters, Volume 22, Issue 8, p. 437 –438
- DOI: 10.1049/el:19860298
- Type: Article
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p.
437
–438
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A dual transform utilising different operators to denote shifts in time and space is introduced. The transform can characterise any discrete linear system operating on time-dependent vectors and leads to particularly simple models in the case of systems which are dually recursive in time and space.
Surface-emitting GaAlAs/GaAs laser with etched mirrors
- Author(s): J.J. Yang ; M. Jansen ; M. Sergant
- Source: Electronics Letters, Volume 22, Issue 8, p. 438 –439
- DOI: 10.1049/el:19860299
- Type: Article
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–439
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A surface-emitting GaAlAs/GaAs laser is fabricated using ion milling to etch the mirrors. Output light is defected to a direction perpendicular to the wafer surface by a monolithically integrated 45° mirror.
Low-cost restructuring technique for WSI
- Author(s): C.R. Jesshope and L. Bentley
- Source: Electronics Letters, Volume 22, Issue 8, p. 439 –441
- DOI: 10.1049/el:19860300
- Type: Article
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The letter describes a novel programmable link for restructuring wafer-scale circuits. These links are nonvolatile, fully reversible and require no special processing or programming equipment. In addition, they form low-resistance connections of less than 1 Ω with high repeatability. Experimental results from analysing different link geometries are presented and practical aspects of the technique are described.
Reduction of switching regulator audiosusceptibility to zero
- Author(s): D.V. Otto
- Source: Electronics Letters, Volume 22, Issue 8, p. 441 –442
- DOI: 10.1049/el:19860301
- Type: Article
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441
–442
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Using state-space averaging theory it is shown to be possible to reduce the audiosusceptibility of switching regulators to zero or almost to zero over their entire operating regime. The feedforward gain required is given by a simple ratio of openloop gains.
Temperature distribution on ceramic substrates
- Author(s): E. Boone ; G. De Mey ; L. Rottiers
- Source: Electronics Letters, Volume 22, Issue 8, p. 442 –443
- DOI: 10.1049/el:19860302
- Type: Article
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An exact two-dimensional model is presented to calculate the temperature distribution on a ceramic substrate.
Long-reach single-mode-fibre OTDR using a 1.5 μm semiconductor laser
- Author(s): E.A. Cottrell and M.C. Brain
- Source: Electronics Letters, Volume 22, Issue 8, p. 443 –445
- DOI: 10.1049/el:19860303
- Type: Article
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We report an OTDR operating at 1.535 μm wavelength, capable of fault location over 100 km of commercial single-mode fibre. Whereas the one-way loss range of an OTDR is conventionally quoted for a received signal/noise ratio of unity, we demonstrate that a margin of at least 3 dB should be allowed in deducing the realistic range of fibre loss over which faults could be located.
Effect of filters on FSK with piecewise-constant shaping functions
- Author(s): I. Korn
- Source: Electronics Letters, Volume 22, Issue 8, p. 445 –446
- DOI: 10.1049/el:19860304
- Type: Article
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In analysing an FSK system there is a need to compute the effect of narrowband filters on the modulated signal. In the letter we show how to do this directly and precisely for any piecewise-constant shaping function.
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