Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 22, Issue 5, 27 February 1986
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Volume 22, Issue 5
27 February 1986
Graded-index-type crystalline fibre for IR light transmission
- Author(s): S. Kachi ; M. Kimura ; K. Shiroyama
- Source: Electronics Letters, Volume 22, Issue 5, p. 230 –231
- DOI: 10.1049/el:19860158
- Type: Article
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A new method for making a graded-index-type crystalline fibre is proposed. A fibre for IR light transmission with crystalline claddings was desired for improving the reliability of the crystallinc fibre and for avoiding any excess loss at the core surface. A fibre with the core-cladding structure was made by complex extrusion with KRS-5 as the core and KRS-6 as the cladding. Obtaining a smooth core-cladding interface was very difficult. This problem was overcome by a diffusion of composite ions by annealing after the extrusion. The fibre has a concentration distribution that can be accounted for by a GI fibre. The transmission loss of the CO2 laser is 0.2 dB/m with a launching NA of 0.05.
11 W quasi-CW monolithic laser diode arrays
- Author(s): G.L. Harnagel ; P.S. Cross ; D.R. Scifres ; D.P. Worland
- Source: Electronics Letters, Volume 22, Issue 5, p. 231 –233
- DOI: 10.1049/el:19860159
- Type: Article
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An optical power of 11 W from one facet has been obtained from a 1 cm integrated GaAlAs laser array for 150 μs is pulse widths (quasi-CW operation). The array consists of 20 tenstripe lasers spaced along the bar, employing about 20% of the facet length for active laser emission.
Loss of lock in long-loop phase-locked receivers in the presence of large interfering carrier
- Author(s): S.D. Marougi
- Source: Electronics Letters, Volume 22, Issue 5, p. 233 –234
- DOI: 10.1049/el:19860160
- Type: Article
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In long-loop receivers, the inclusion of time delay within the loop causes significant modification in the loop's acquisition and synchronous behaviour. In the letter an investigation has been carried out to specify the signal-to-interference ratio required to bring the loop out of synchronism with a desired noise-free carrier. Results are displayed for long loops with different time delay, as well as for short-loop receivers.
InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading and multiplication regions grown by metalorganic chemical vapour deposition
- Author(s): R.D. Dupuis ; J.R. Velebir ; J.C. Campbell ; G.J. Qua
- Source: Electronics Letters, Volume 22, Issue 5, p. 235 –236
- DOI: 10.1049/el:19860161
- Type: Article
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InGaAs/InGaAsP/InP avalanche photodiodes with separate absorption, ‘grading’ and multiplication regions (SAGMAPDs) have been fabricated for the first tune from wafers grown by metalorganic chemical vapour deposition (MOCVD) These APDs exhibit low dark current (≃ 32 nA at 90% breakdown) and high-speed pulse response (≃ 100 ps FWHM).
Ga0.47In0.53As field-effect transistors with a lattice-mismatched reduced leakage current GaAs gate
- Author(s): P.A. Garbinski ; C.Y. Chen ; A.Y. Cho
- Source: Electronics Letters, Volume 22, Issue 5, p. 236 –238
- DOI: 10.1049/el:19860162
- Type: Article
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A lattice-mismatched GaAs gate Ga0.47In0.47As field-effect transistor (LMG-FET) with significantly reduced reverse gate leakage current is reported. The mechanism responsible for this reduction by over two orders of magnitude over previous work has been identified; it is attributed to the confinement of misfit dislocations originating at the GaAs/InGaAs interface. The LMG-FET had a gate leakage current of 0.48 μA at − V, and an extrinsic DC transconductance of 104 mS/ mm for a 1.4 μm gate length and 240 μm gate width. Further refinements in crystal growth should lead to even lower values of leakage current, making this technology attractive for high-speed logic, as well as lightwave optoelectronic integration.
Fibre-optic thermometer using semiconductor-etalon sensor
- Author(s): G. Beheim
- Source: Electronics Letters, Volume 22, Issue 5, p. 238 –239
- DOI: 10.1049/el:19860163
- Type: Article
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–239
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A fibre-optic thermometer is described which uses a thick-film SiC sensing etalon. The etalon's temperature-dependent phase shift is determined by analysing its spectral reflectance, using an LED and a tunable Michelson interferometer. Temperatures from 20 to 1000°C are measured with better than 0.5 deg C resolution.
Small-signal drain conductance of MOSFET in saturation region—a simple model
- Author(s): F.S. Shoucair
- Source: Electronics Letters, Volume 22, Issue 5, p. 239 –241
- DOI: 10.1049/el:19860164
- Type: Article
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A simple expression is developed which determines an upper bound on the incremental drain conductance of the long-channel MOSFET in saturation. This expression may be used to estimate efficiently lower gain bounds of MOS gain stages at the hand analysis phase of analogue circuit designs. The accuracy achieved is comparable to that of currently used commercial simulators and to the data spread observed in current MOS processes. A criterion for ‘long’-channel behaviour in saturation is proposed.
Schottky barriers on p-type gallium arsenide prepared by molecular beam epitaxy
- Author(s): M. Missous ; E.H. Rhoderick ; K.E. Singer
- Source: Electronics Letters, Volume 22, Issue 5, p. 241 –242
- DOI: 10.1049/el:19860165
- Type: Article
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Rectifying contacts have been made by depositing epitaxial films of aluminium and antimony on p-type gallium arsenide by molecular beam epitaxy. The I/V and C/V characteristics were almost ideal. The barrier heights determined from the 1/V characteristics were 0.64 eV for aluminium and 0.66 eV for antimony. The significance of these results is briefly discussed.
Monolithic integration of InGaAs/InP DFB lasers and InGaAs/InAlAs MQW optical modulators
- Author(s): Y. Kawamura ; K. Wakita ; Y. Itaya ; Y. Yoshikuni ; H. Asahi
- Source: Electronics Letters, Volume 22, Issue 5, p. 242 –243
- DOI: 10.1049/el:19860166
- Type: Article
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The first successful monolithic integration of InGaAsP/InP distributed feedback (DFB) lasers and InGaAs/InAlAs multiple quantum well (MQW) optical modulators using LPE (liquid phase epitaxy)/MBE (modlecular beam epitaxy) hybrid growth reported. A 14% light output modulation is observed in this integrated device.
Modified phase-shift keying—a new line code for digital subscriber loops
- Author(s): D.E. Borth
- Source: Electronics Letters, Volume 22, Issue 5, p. 243 –244
- DOI: 10.1049/el:19860167
- Type: Article
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A new line code is presented which may be useful for future digital subscriber loops. To minimise crosstalk interference into adjacent cable pairs, a triangular waveform is employed along with controlled signal transitions. The code description, power spectrum and eye diagram are presented.
MOS transconductors and integrators with high linearity
- Author(s): Y. Tsividis ; Z. Czarnul ; S.C. Fang
- Source: Electronics Letters, Volume 22, Issue 5, p. 245 –246
- DOI: 10.1049/el:19860168
- Type: Article
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MOS transconductors are discussed in which the transistors determining the transconductance do not carry bias current, operate with large gate-source voltage, and are signal-driven in such a way that their nonlinearities are eliminated. An integrator implemented using one of the proposed circuits exhibited measured total harmonic distortion of less than 0.1% for differential input signals of 2.5 V p-p, and less than 1% for 5 V p-p.
Measurements of impulse response of a wideband radio channel at 910 MHz from a moving vehicle
- Author(s): J. van Rees
- Source: Electronics Letters, Volume 22, Issue 5, p. 246 –247
- DOI: 10.1049/el:19860169
- Type: Article
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–247
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A set-up for impulse response measurement is described using short RF pulses and a wideband receiver. A fast wave form digitiser digitises the detected impulse response and a minicomputer stores the data on a hard disc. First results are presented showing the rapid change of the impulse response during vehicle movement.
Electron transport across depleted region of a fine-gate GaAs:AlGaAs heterojunction FET
- Author(s): T.J. Thornton ; M. Pepper ; H. Ahmed ; D. Andrews ; G.J. Davies
- Source: Electronics Letters, Volume 22, Issue 5, p. 247 –249
- DOI: 10.1049/el:19860170
- Type: Article
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–249
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The low-temperature characteristics of a depleted GaAs AlGaAs heterojunction FET with gate length of 1000 Å and width 10 μm show that the current is initially space-charge- limited. The onset of velocity saturation is observed as the source-drain bias is increased. The structure in the differential of resistance is attributed to the emission of optic phonons by hot electrons.
Band-structure engineering for low-threshold high-efficiency semiconductor lasers
- Author(s): A.R. Adams
- Source: Electronics Letters, Volume 22, Issue 5, p. 249 –250
- DOI: 10.1049/el:19860171
- Type: Article
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It is shown that by using a strained-layer superlattice to form the active region of a quantum-well laser the threshold current can be reduced and Auger recombination and inter-valence band absorption can be effectively eliminated. The band-structure requirements are discussed generally and might be achieved by alternative methods.
Low dissipation current GaAs prescaler IC
- Author(s): K. Hasegawa ; T. Uenoyama ; K. Nishii ; T. Onuma
- Source: Electronics Letters, Volume 22, Issue 5, p. 251 –252
- DOI: 10.1049/el:19860172
- Type: Article
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A 1 GHz variable modulus freqency divider with very low dissipation current has been developed. Using a high-transconductance (200–250 mS/mm) FET by Pt burying technology and series gating source-coupled FET logic, the dissipation current of the fabricated IC was reduced to 3.2 mA at 1 GHz operation.
Novel Ti:LiNbO3 linear mode confinement modulator
- Author(s): M. Bélanger and G.L. Yip
- Source: Electronics Letters, Volume 22, Issue 5, p. 252 –253
- DOI: 10.1049/el:19860173
- Type: Article
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A novel active Ti:LiNbO3 linear electro-optic modulator has been fabricated and characterised. This device yields a linear modulation of over 97% with a device length of less than 1 mm, hence permitting high packing density.
Optical System with two packaged 1.5 μm semiconductor laser amplifier repeaters
- Author(s): I.W. Marshall ; M.J. O'Mahony ; P.D. Constantine
- Source: Electronics Letters, Volume 22, Issue 5, p. 253 –255
- DOI: 10.1049/el:19860174
- Type: Article
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The first demonstration of two packaged 1.5 μm semiconductor laser amplifiers in an optical system is reported. Total coupling losses for the fibre-tailed packages were 10dB and 13 dB, respectively. In a 140 Mbit/s intensity-modulated system experiment, using the amplifiers as linear repeaters, a total repeater again of 26 dB was achieved.
Influence of bias current and signal power on behaviour of an antireflection-coated laser amplifier
- Author(s): R.P. Webb and W.J. Devlin
- Source: Electronics Letters, Volume 22, Issue 5, p. 255 –256
- DOI: 10.1049/el:19860175
- Type: Article
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The variation of gain with wavelength of a 1.5 μm semiconductor-laser amplifier with antireflection-coated facets has been measured over several modes. The internal gain and resonant wavelength were found using a curve- fitting technique and the dependence of these quantities on bias current and signal power was investigated.
Integrated low-noise lasers
- Author(s): S.E. Miller
- Source: Electronics Letters, Volume 22, Issue 5, p. 256 –257
- DOI: 10.1049/el:19860176
- Type: Article
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–257
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Using new small-signal analytic relations, the linewidth, amplitude fluctuations, main-mode transient response and photon-electron ringing frequency are presented for a laser with fixed active length and variable-length passive region joined with negligible reflection. With 150 μm active length and 1000 μm total length, a linewidth below 1 MHz is achievable at 5 mW output.
Application of multi-objective optimisation to compensator design for SISO control systems
- Author(s): P.J. Fleming and A.P. Pashkevich
- Source: Electronics Letters, Volume 22, Issue 5, p. 258 –259
- DOI: 10.1049/el:19860177
- Type: Article
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A multi-objective optimisation approach, based on the goal- attainment method, is proposed for the design of corn pensators for single-input, single-output control systems. An illustrative example demonstrates that this method offers the designer an ordered technique for the handling of a variety of design objectives or specifications.
Broadband GaAs FET optical front-end circuit up to 5.6 GHz
- Author(s): N. Ohkawa ; J.-I. Yamada ; K. Hagimoto
- Source: Electronics Letters, Volume 22, Issue 5, p. 259 –260
- DOI: 10.1049/el:19860178
- Type: Article
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Design and performance of transimpedance preamplifiers for multi-gigabit/s optical repeaters are reported using 0.3 μm gate length GaAs FETs and a Ge-APD with a sensitive area of 30 μm diameter. Through reduction of parasitic inductance and stray capacitance in chip assembly, a 3 dB down bandwidth of 8.2 GHz is achieved without a Ge-APD. A 3 dB down bandwidth of 5.6 GHz and good pulse response to 6.5 Gbit/s RZ pattern optical signals are achieved in an optical front-end circuit with a Ge-APD.
Comparison between pseudomode and radiation mode methods for deriving microbending losses
- Author(s): P.L. Francois and C. Vassallo
- Source: Electronics Letters, Volume 22, Issue 5, p. 261 –262
- DOI: 10.1049/el:19860179
- Type: Article
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With a curvature power spectrum proportional, for example, to Ω−(4+2μ) the agreement between Gambling's and Peter-to Ω−(4 + 2μ) theories was found to deteriorate dramatically for large values of μ. Gambling's method always leads to a higher loss than Petermann's; the ratio of both results can reach 10 or more in realistic cases.
Effect of ambient water vapour on stability of lithium niobate electro-optic waveguide devices
- Author(s): A.R. Beaumont ; B.E. Daymond-John ; R.C. Booth
- Source: Electronics Letters, Volume 22, Issue 5, p. 262 –263
- DOI: 10.1049/el:19860180
- Type: Article
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A study of the effect of ambient water vapour on the stability of LiNbO3 Mach-Zehnder optical waveguide devices is reported. It is shown using both a conventional stability measurement technique and a novel voltage-stressing technique that the presence of water vapour degrades considerably the stability of these devices.
Measurement of on-chip waveforms and pulse propagation in digital GaAs integrated circuits by picosecond electro-optic sampling
- Author(s): X.-C. Zhang and R.K. Jain
- Source: Electronics Letters, Volume 22, Issue 5, p. 264 –265
- DOI: 10.1049/el:19860181
- Type: Article
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We demonstrate precise measurement of sub-100 ps rise time on-chip electrical waveforms and of pulse propagation in digital GaAs integrated circuits with the use of picosecond electro-optic sampling. These experiments yield the first non-invasive measurement of single-gate propagation delays via direct and precise observation of on-chip waveforms at the input and output of individual logic gates internal to an integrated circuit.
Optical switching of a GaAs triangular barrier switch grown by MBE
- Author(s): P.K. Rees ; D.G. Parker ; J.A. Barnard
- Source: Electronics Letters, Volume 22, Issue 5, p. 265 –266
- DOI: 10.1049/el:19860182
- Type: Article
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A 100 μm-diameter GaAs triangular barrier switch (TBS) has been optically switched using a GaAlAs laser diode. The resulting transient response has been measured to have a leading edge of ∼ 295 ps.
Sapphire resonator
- Author(s): E. Dieulesaint ; D. Royer ; X. Servajan
- Source: Electronics Letters, Volume 22, Issue 5, p. 266 –268
- DOI: 10.1049/el:19860183
- Type: Article
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A resonator made of a sapphire bar has been thermally excited in a flexural mode by heating a thin layer deposited on one side of the bar. The vibration was detected optically. A Q-factor of 800,000 was measured at the resonance frequency of 20,262 Hz.
Mode-locking of a neodymium-doped monomode fibre laser
- Author(s): I.P. Alcock ; A.I. Ferguson ; D.C. Hanna ; A.C. Tropper
- Source: Electronics Letters, Volume 22, Issue 5, p. 268 –269
- DOI: 10.1049/el:19860184
- Type: Article
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A neodymium-doped monomode fibre laser operating at 1.08 pm has been actively mode-locked usmg intracavity acousto-optic loss modulation. The mode-locked laser output consisted of a train of pulses of less than 1 ns FWHM with an energy of ∼ 17 pJ at a repetition rate of 41.45 MHz. When the laser was simultaneously Q-switched the peak power of the mode-locked pulses inside the 690 ns-wide envelope was enhanced by more than three orders of magnitude.
Error-correcting coding for banking document bar codes
- Author(s): R. Redinbo and J. Hemmann
- Source: Electronics Letters, Volume 22, Issue 5, p. 269 –270
- DOI: 10.1049/el:19860185
- Type: Article
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Bar codes, used for the automatic processing of financial payment records, may be protected by extended Reed-Solomon codes over prime field alphabets. New decoding methods which handle both random and erasure errors are presented.
Field dependence of drift velocity and electron population in satellite valleys in gallium arsenide
- Author(s): V. Choudhry and V.K. Arora
- Source: Electronics Letters, Volume 22, Issue 5, p. 271 –272
- DOI: 10.1049/el:19860186
- Type: Article
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We present, for the first time, simple explicit expressions for the drift velocity and the electron population in the many-valley band structure of n-type gallium arsenide. It is shown that all the experimentally observed features could be well explained if mean-free-path values of 150 nm and 700 nm in the two sets of valleys are assumed. It is indicated that the mobilities of high-mobility valleys are rapidly degraded with the increase in the electric field. The novel results so obtained could be usefully applied in the design and development of semiconducting devices with two or more energy level structures.
Statistical antenna gain description of randomly distorted reflectors
- Author(s): M.H.A.J. Herben and P.J.W. Gelissen
- Source: Electronics Letters, Volume 22, Issue 5, p. 272 –273
- DOI: 10.1049/el:19860187
- Type: Article
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The letter describes in statistical terms the gain of randomly distorted reflector antennas. Formulas are presented for the mean value, the standard deviation and the probability density function of the antenna gain. The influence of the RMS surface error and the correlation interval on the statistical distribution is indicated.
Minimum switches and connection procedure for eight telephone lines
- Author(s): R.A. Newbury
- Source: Electronics Letters, Volume 22, Issue 5, p. 274 –275
- DOI: 10.1049/el:19860188
- Type: Article
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A minimum of 23 interconnection switches is found possible, and a procedure for the correct choice of Connection route is described.
Simple analysis of external optical feedback in DFB semiconductor lasers
- Author(s): F. Favre
- Source: Electronics Letters, Volume 22, Issue 5, p. 275 –276
- DOI: 10.1049/el:19860189
- Type: Article
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The effect of weak external feedback on the threshold gain and resonant frequency of DFB semiconductor lasers is theoretically analysed. Simple formulas are derived which allow comparison of the sensitivity to optical feedback for DFB lasers and Fabry-Perot lasers.
Spin-on diffused GaSb mesa photodiode with high breakdown voltages
- Author(s): C. Heinz
- Source: Electronics Letters, Volume 22, Issue 5, p. 276 –277
- DOI: 10.1049/el:19860190
- Type: Article
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GaSb mesa photodiodes have been fabricated by Zn diffusion from spin-on film sources. For the first time, breakdown voltages up to 30 V are reported on diffused GaSb diodes. Broadband responsivity with an external quantum efficiency of 60% at 1.7 μm has been obtained without antireflection coating.
All-fibre-optic logic ‘AND’ gate
- Author(s): Y. Kimura ; K.-I. Kitayama ; N. Shibata ; S. Seikai
- Source: Electronics Letters, Volume 22, Issue 5, p. 277 –278
- DOI: 10.1049/el:19860191
- Type: Article
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Operation of an all-fibre-optic-logic AND gate is demonstrated. The logic gate consists of a birefringent fibre, a coiled fibre used as a quarter-wave plate, and a highly birefringent fibre as a polariser. The 9 dB extinction ratio of ‘on’ and ‘off’ states is achieved for the all-fibre-type AND gate.
High-power GaAlAs window lasers
- Author(s): J. Ungar ; N. Bar-Chaim ; I. Ury
- Source: Electronics Letters, Volume 22, Issue 5, p. 279 –280
- DOI: 10.1049/el:19860192
- Type: Article
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High-power GaAlAs lasers using the large optical cavity buried-heterostructure (LOC-BH) window structure, which provides transverse index guiding in the nonabsorbing facet region, have been fabricated. Threshold currents between 30 and 50 mA and differential quantum efficiencies of 0.85 mW/ mA have been measured. CW and pulsed output powers up to 88 and 372 mW, respectively, have been attained.
New programmable switched-capacitor filter
- Author(s): P.V. Ananda Mohan ; V. Ramachandran ; M.N.S. Swamy
- Source: Electronics Letters, Volume 22, Issue 5, p. 280 –281
- DOI: 10.1049/el:19860193
- Type: Article
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A new programmable SC filter structure which can realise second-order lowpass, highpass and bandpass functions is described.
Dispersion characteristics of unsymmetrical broadside-coupled striplines with anisotropic substrate
- Author(s): T. Kitazawa ; A. Muranishi ; Y. Hayashi
- Source: Electronics Letters, Volume 22, Issue 5, p. 281 –283
- DOI: 10.1049/el:19860194
- Type: Article
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Dispersion characteristics of the unsymmetrical broadside-coupled striplines of unequal width are presented for the first time. The frequency-dependent hybrid-mode solutions converge to the quasistatic values at lower frequencies for various structural parameters of the broadside-coupled suspended striplines (BCSSs) and broadside-coupled inverted striplines (BCISs) with the anisotropic substrates.
Performance of ASK heterodyne detection for various laser linewidths
- Author(s): Y.K. Park ; J.-M.P. Delavaux ; N.A. Olsson ; T.V. Nguyen ; D.E. Tamburino ; R.W. Smith ; S.K. Korotky ; M. Dixon
- Source: Electronics Letters, Volume 22, Issue 5, p. 283 –284
- DOI: 10.1049/el:19860195
- Type: Article
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We report the dependence of receiver sensitivity on laser linewidth for a series of ASK heterodyne experiments performed with 1.5 μm distributed feedback lasers and external cavity lasers, and the result of an error-free heterodyne transmission experiment at 150 Mbit/s over 102 km of fibre using the external cavity lasers.
Low resistance alloyed NiGeAuAgAu ohmic contacts to modulation-doped Al0.48In0.52As/Ga0.47In0.53As
- Author(s): P.M. Capani ; S.D. Mukherjee ; H.T. Griem ; L. Rathbun ; L.F. Eastman
- Source: Electronics Letters, Volume 22, Issue 5, p. 285 –286
- DOI: 10.1049/el:19860196
- Type: Article
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A low-resistance ohmic-contacts metallurgy has been developed for the modulation-doped Al0.48In0.52As/Ga0.47In0.53As structure for MODFET (HEMT) application. The metallurgy involves we sequentially evaporated NiGeAuAgAu layers followed by transient thermal alloy cycles. This resulted in low transfer resistance ∼ 0.20 ± 0.05 Ω mm to the two dimensional electron gas for alloying temperatures from 410° C to 500°C.
New frame synchroniser for satellite-switched time-division multiple-access systems
- Author(s): R.J. Simpson ; T.J. Terrell ; L.-K. Shark
- Source: Electronics Letters, Volume 22, Issue 5, p. 286 –287
- DOI: 10.1049/el:19860197
- Type: Article
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A new frame synchroniser for satellite-switched time-division multiple-access systems is described. It minimises false alarm and misdetection by incorporating an adaptive and optimum window width control strategy.
Performance of interconnections laid on insulating and MIS substrates
- Author(s): C. Seguinot ; P. Kennis ; P. Pribetich
- Source: Electronics Letters, Volume 22, Issue 5, p. 287 –289
- DOI: 10.1049/el:19860198
- Type: Article
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287
–289
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Crosstalk phenomena and pulse propagation in coupled microstrip lines are analysed. Results obtained with insulating substrates and MIS structures are compared. The method of analysis can also be applied to the modelling of Schottky contact interconnection lines. These first investigations point out the necessity to define new structures owing to the reduction of crosstalk phenomena in MMICs.
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