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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 22, Issue 22, 23 October 1986

Volumes & issues:

Volume 22, Issue 22

23 October 1986

Broad wavelength tuning under single-mode oscillation with a multi-electrode distributed feedback laser
  • Author(s): Y. Yoshikuni ; K. Oe ; G. Motosugi ; T. Matsuoka
  • Source: Electronics Letters, Volume 22, Issue 22, p. 1153 –1154
  • DOI:  10.1049/el:19860789
  • Type: Article
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  • p. 1153 –1154 (2)
    Broad wavelength tuning under single-mode oscillation is achieved for a 1.5 μm range multi-electrode distributed feedback laser. The lasing wavelength can be tuned electrically, maintaining a stable single-mode oscillation without mode jumping. The tuning has reached over 20 Å under a noticeable condition of constant power (5mW), with a sufficient side-mode suppression ratio over 30 dB.
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Mobile radio propagation in Auckland at 851 MHz
Jacoby and Kost's binary two-thirds rate modulation code
High-performance InGaAsP/InP 1.3 μm laser structures with both facets etched
Comparison-based diagnosis with faulty comparators
Spectral chirping suppression using modified DFB-DC-PBH LD
Convergence of physical optics integrals by Ludwig's technique
  • Author(s): J.R. Parkinson  and  M.J. Mehler
  • Source: Electronics Letters, Volume 22, Issue 22, p. 1161 –1162
  • DOI:  10.1049/el:19860795
  • Type: Article
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  • p. 1161 –1162 (2)
    The convergence properties of Ludwig's integration technique are investigated, when applied to physical optics (PO) analysis. It is demonstrated that the rate of convergence is sensitive to the choice of integration grid co-ordinate system. Examples of PO analysis applied to paraboloidal and ellipsoidal reflectors show the reduction in computation time achievable when using a cartesian integration grid rather than a polar grid.
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Biquadratic filter sections employing a single current conveyor
Pair-groove-substrate GaAs/AlGaAs multiquantum-well lasers with a self-aligned stripe geometry
  • Author(s): T. Yamada ; T. Yuasa ; K. Kamon ; M. Shimazu ; M. Ishii
  • Source: Electronics Letters, Volume 22, Issue 22, p. 1164 –1166
  • DOI:  10.1049/el:19860797
  • Type: Article
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  • p. 1164 –1166 (3)
    GaAs/AlGaAs multiquantum-well (MQW) lasers with a self-aligned structure incorporating a waveguide and current confinement were fabricated on a substrate with a pair of etched grooves using two-step epitaxial growth. First, a current-blocking layer was grown selectively on the substrate by low-pressure organometallic vapour-phase epitaxy (OMVPE), and then the GaAs/AlGaAs MQW laser structure was constructed on the substrate with the OMVPE layer by molecular-beam epitaxy. The mesa-shaped part of the active layer above the current-confinement region provides a lateral refractive-index optical waveguide. The lasers show well controlled transverse-mode oscillations with low threshold currents.
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Characteristics of a parallel-plate waveguide with a narrow slit in its upper plate
New heterostructure junction field-effect transistor (HJFET)
  • Author(s): J.G. Simmons  and  G.W. Taylor
  • Source: Electronics Letters, Volume 22, Issue 22, p. 1167 –1169
  • DOI:  10.1049/el:19860799
  • Type: Article
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  • p. 1167 –1169 (3)
    A new type of heterostructure junction field-effect transistor is proposed which is suitable for realisation in a heterojunction material combination such as AlGaAs-GaAs. The conducting region is a layer which is pinched off by the modulation of a unique n-n heterojunction, formed by either MOCVD or molecular-beam-epitaxial growth techniques. Threshold control is by ion implantation as in MOSFET technology.
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Thermal model of laser diode arrays
VLSI architecture of bit-serial quasicyclic encoders
  • Author(s): Q. Wang ; F.H. El Guibaly ; V.K. Bhargava
  • Source: Electronics Letters, Volume 22, Issue 22, p. 1170 –1171
  • DOI:  10.1049/el:19860801
  • Type: Article
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  • p. 1170 –1171 (2)
    A bit-serial algorithm for the multiplication of elements in the vector space of finite dimension is presented. Based on the algorithm, a VLSI architecture of quasicyclic (QC) encoders is shown. Compared with that of conventional QC encoders, the proposed architecture is more regular, simpler and programmable. It also offers designers more flexibility for choosing available VLSI techniques. In addition, it can easily be changed to accommodate any QC coding strategies.
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Frequency demodulator for DBS using an SAW adaptive filter
AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performance
  • Author(s): M.F. Chang ; P.M. Asbeck ; K.C. Wang ; G.J. Sullivan ; D.L. Miller
  • Source: Electronics Letters, Volume 22, Issue 22, p. 1173 –1174
  • DOI:  10.1049/el:19860803
  • Type: Article
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  • p. 1173 –1174 (2)
    Using a self-aligned base contact process and proton implantation to reduce extrinsic base-collector capacitance, we have improved the high-speed performance of AlGaAs/ GaAs heterojunction bipolar transistor digital circuits. The cutoff frequency of the transistor fT with an emitter width of 2.0 μm is 45 GHz. NTL ring oscillators have operated at 16.5 ps/gate and CML ring oscillators at 27.6 ps/gate. Frequency dividers (1/4) have operated up to 11 GHz with wafer-probe testing These are record speeds for bipolar circuits.
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Linear transmission-line model analysis of a circular patch antenna
New analysis of LED to single-mode fibre coupling
Connection between stabilisability conditions for two different controllers
Novel means of detecting microwave power using optical fibres
Parallel processor for real-time analysis of binary images
Stabilisation of heterodyne receiver sensitivity with automatic polarisation control system
Fast public key cryptosystem based on matrix rings
GaAs MMIC broadband SPDT PIN switch
Chromatic dispersion measurement over a 120 km dispersion-shifted single-mode fibre in the 1.5 μm wavelength region
  • Author(s): Y. Miyajima ; M. Ohnishi ; Y. Negishi
  • Source: Electronics Letters, Volume 22, Issue 22, p. 1185 –1186
  • DOI:  10.1049/el:19860812
  • Type: Article
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  • p. 1185 –1186 (2)
    Chromatic dispersion in the 1.47–1.60 μm wavelength region is measured successfully for a dispersion-shifted fibre over 120 km by the LD phase-shift method. The measured value of a 123 km spliced fibre agrees well with the sum of chromatic dispersion values of its constituent fibres. This confirms the additive rule of chromatic dispersion for long dispersion shifted fibre in the 1.5 μm wavelength region.
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MOVPE InGaAs/InP grown directly on GaAs substrates
  • Author(s): A.G. Dentai ; C.H. Joyner ; B. Tell ; J.L. Zyskind ; J.W. Sulhoff ; J.F. Ferguson ; J.C. Centanni ; S.N.G. Chu ; C.L. Cheng
  • Source: Electronics Letters, Volume 22, Issue 22, p. 1186 –1188
  • DOI:  10.1049/el:19860813
  • Type: Article
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  • p. 1186 –1188 (3)
    We have demonstrated the feasibility of growth of InP/InGaAs structures directly on GaAs using atmospheric pressure metal organic vapour phase epitaxy. Growth conditions and the equipment used are described along with some preliminary measurements on the GaAs/InP/InGaAs wafers. P-N junctions were formed in these materials to evaluate diode characteristics.
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Soft error rates in 64 K and 256 K DRAMs
  • Author(s): A.K.M.M. Haque ; J. Yates ; D. Stevens
  • Source: Electronics Letters, Volume 22, Issue 22, p. 1188 –1189
  • DOI:  10.1049/el:19860814
  • Type: Article
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  • p. 1188 –1189 (2)
    Comparison of alpha-particle-induced soft error rates for 64K and 256 K DRAM devices from several manufacturers have indicated characteristic changes as the circuit density increases. In 64K devices bit-line-dependent errors form a more significant fraction of the total error rate. In contrast, 256 K devices exhibit greater cell sensitivity. Bit-line sensitivity increases by one order of magnitude and cell sensitivity by approximately two orders of magnitude between 64K and 256 K devices.
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Two TV channel multimode fibre link using a single multilongitudinal mode laser diode (820nm) and path-difference multiplexing
Implanted planar GaInAsP/InP hetero-bipolar transistor
Subsampling and adaptive interpolation for MAC video signals
Bandwidth-limited, single-longitudinal-mode. ultrashort optical pulse generation by a strongly RF-modulated, distributed Bragg reflector InGaAsp diode laser at 1.3 μm
  • Author(s): N. Zhang ; N. Onodera ; H. Ito ; H. Inaba
  • Source: Electronics Letters, Volume 22, Issue 22, p. 1194 –1196
  • DOI:  10.1049/el:19860818
  • Type: Article
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  • p. 1194 –1196 (3)
    The feasibility for generating bandwidth-limited, single-longitudinal-mode, ultrashort optical pulses has been demonstrated for the first time using a DBR diode laser at 1.3 μm by the method of strong RF modulation superimposed on the DC bias current. The time-bandwidth product of generated picosecond pulses at 400 MHz modulation frequency was measured to be 0.45 for the Lorentzian pulse shape with FWHM of approximately 31.5 ps.
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Second-order PLL loop filters with independent adjustment of ωn and ζ
Spectral characteristics for 1.3 μm monolithic external cavity DFB lasers
Surface wave coupling between circular patch antennas
Image correlation via pulsed dynamic holography
  • Author(s): M.G. Nicholson ; G.G. Gibbons ; L.C. Laycock ; C.R. Petts
  • Source: Electronics Letters, Volume 22, Issue 22, p. 1200 –1202
  • DOI:  10.1049/el:19860822
  • Type: Article
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  • p. 1200 –1202 (3)
    We describe initial experiments on a photorefractive-based optical image correlator which employs a frequency-doubled, pulsed Nd: YAG laser with a pulse length of 10 ns to write a phase grating into a crystal of bismuth silicon oxide. The correlation of simple binary images has been demonstrated, and measurements indicate that the rise time of the correlation signal is less than 200 ns.
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Variable reduction method in routing problems
Use of bilinear integrator in design of fully differential biquads
Wavelength-flattened 8×8 single-mode star coupler
High-efficiency, low-leakage MOCVD-grown GaInAs/AlInAs heterojunction photodiodes for detection to 2.4μm
  • Author(s): A.J. Moseley ; M.D. Scott ; A.H. Moore ; R.H. Wallis
  • Source: Electronics Letters, Volume 22, Issue 22, p. 1206 –1207
  • DOI:  10.1049/el:19860826
  • Type: Article
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  • p. 1206 –1207 (2)
    Photodiodes with a long-wavelength cutoff extending out to 2.4 μm have been fabricated from MOCVD-grown Ga0.28-In0 72As/Al0.28In0.72As heterostructures, using a compositionally graded buffer layer to accommodate the lattice mismatch between the active layer and the InP substrate. These devices exhibit peak efficiency as high as 95% at 1.8–2.2μm with dark currents as low as 35 nA at −0.5 V reverse bias.
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Dependence of fused taper couplers on external refractive index
Erratum: New CW imaging mode for scanning acoustic microscopy
Erratum: Properties of master/slave manipulators
Erratum: Novel lossless tunable floating FDNR simulation using two current conveyors and a buffer

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