Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 22, Issue 1, 2 January 1986
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Volume 22, Issue 1
2 January 1986
Temperature effects on dispersion and loss for high-bit-rate LED-based lightwave systems
- Author(s): P. Shumate
- Source: Electronics Letters, Volume 22, Issue 1, p. 1 –2
- DOI: 10.1049/el:19860001
- Type: Article
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Examination of the impact of wide temperature extremes on high-bit-rate LED-based systems indicates that the LED room-temperature wavelength should be selected below 1300 nm to avoid excess loss owing to the 1390 nm water peak in fibre.
Single-lobed emission from phase-locked array lasers
- Author(s): J.J. Yang and M. Jansen
- Source: Electronics Letters, Volume 22, Issue 1, p. 2 –4
- DOI: 10.1049/el:19860002
- Type: Article
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Phased-array lasers which emit in a single far-field lobe corresponding to the lowest-order mode are described. Single-lobed diffraction-limited operations are achieved by two simple approaches: (i) close-coupled elements and (ii) diffraction-coupled arrays.
New method for mode-field radius measurements in single-mode fibres based on harmonics detection
- Author(s): G. Coppa ; P. di Vita ; M. Potenza
- Source: Electronics Letters, Volume 22, Issue 1, p. 4 –5
- DOI: 10.1049/el:19860003
- Type: Article
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A new, easily implementable technique for mode-field radius measurement is described. It is based on a dynamical filtering and the detection of two harmonics of the fibre output radiation. The results are presented and discussed.
Long-span optical FSK heterodyne single-filter detection transmission experiment using a phase-tunable DFB laser diode
- Author(s): S. Yamazaki ; K. Emura ; M. Shikada ; M. Yamaguchi ; I. Mito ; K. Minemura
- Source: Electronics Letters, Volume 22, Issue 1, p. 5 –7
- DOI: 10.1049/el:19860004
- Type: Article
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High receiver sensitivity (−51.9 dBm) and long span (243 km) transmission expriments have been achieved with a 140 Mbit/s optical FSK heterodyne single-filter detection system, using a phase-tunable DFB laser diode as a transmitter. This has enabled direct FSK modulation without waveform distortion. Also, a 280 Mbit/s 204 km transmission experiment has been carried out successfully.
Suppression of drain source ringing in 100 kHz MOSFET induction heating power supply
- Author(s): D.W. Tebb and L. Hobson
- Source: Electronics Letters, Volume 22, Issue 1, p. 7 –8
- DOI: 10.1049/el:19860005
- Type: Article
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The letter is concerned with a full bridge, current-fed MOSFET inverter feeding a parallel resonant induction heating load. A means of suppressing ringing between parasitic lead inductance and drain source capacitance is described.
Narrow-beam high-power twin-channel laser with reduced sidelobes
- Author(s): C.B. Morrison ; L.M. Zinkiewicz ; A. Burghard ; L. Figueroa
- Source: Electronics Letters, Volume 22, Issue 1, p. 8 –9
- DOI: 10.1049/el:19860006
- Type: Article
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We present a version of the twin-channel laser with reduced dimensions. This version has improved yields of high-power lasers (Pmax ∼ 120 mW at 50% duty cycle) with single-lobe far-field distributions. These far-field patterns exhibit almost no sidelobes, a fact that can be explained by the reduced dimensions.
Coherent optical receiver for 680 Mbit/s using phase diversity
- Author(s): A.W. Davis ; S. Wright ; M.J. Pettitt ; J.P. King ; K. Richards
- Source: Electronics Letters, Volume 22, Issue 1, p. 9 –11
- DOI: 10.1049/el:19860007
- Type: Article
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A coherent optical receiver using a multiport optical coupler to provide phase diversity is described. By this means, only homodyne bandwidth is required in the signal processing, but with tolerances on the frequency tracking typical of heterodyne systems. Measured sensitivities with limited local-oscillator power are −47.5 dBm at 320 Mbit/s and −42 dBm at 680 Mbit/s. The results at the higher bit rate are strongly influenced by limited receiver module bandwidth.
Coupling efficiency in selective excitation of tubular modes into graded-index multimode fibres
- Author(s): F. Jean ; P. Facq ; F. de Fornel
- Source: Electronics Letters, Volume 22, Issue 1, p. 11 –13
- DOI: 10.1049/el:19860008
- Type: Article
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High-purity selective-mode launching being feasible in graded-index profile multimode fibres, we evaluate in a closed form the effects of unavoidable launching imperfections such as lateral offset, angular misalignment and scale discordance of the launched beam.
Transformation of polarisation bases for radar target scattering matrix
- Author(s): P.S.P. Wei ; J.R. Huynen ; T.C. Bradley
- Source: Electronics Letters, Volume 22, Issue 1, p. 13 –14
- DOI: 10.1049/el:19860009
- Type: Article
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By expanding the scattering matrix with the Pauli matrices and using the angular parameters for the polarisation states, we present new results on the explicit forms of the matrix elements which, for simple targets, lead readily to solutions for the nulls and other insights.
Ga0.47In0.53As JFETs and MESFETs with OM-VPE-grown GaAs surface layers
- Author(s): J. Selders ; P. Roentgen ; H. Beneking
- Source: Electronics Letters, Volume 22, Issue 1, p. 14 –16
- DOI: 10.1049/el:19860010
- Type: Article
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Ga0.47In0.53As JFETs and MESFETs have been fabricated with a lattice-mismatched GaAs layer under the gate. The GaAs could be grown with good electrical and crystallo-graphic quality in spite of the large lattice mismatch by an OM-VPE process. Pn, Np and Schottky diodes were fabricated and applied to n-GaInAs FET channels. Both types of devices exhibited high transconductances of about 100 mS/mm.
Improved high-frequency response of InGaAsP double-channel buried-heterostructure lasers
- Author(s): A. Valster ; L.J. Meuleman ; P.I. Kuindersma ; T.V. Dongen
- Source: Electronics Letters, Volume 22, Issue 1, p. 16 –18
- DOI: 10.1049/el:19860011
- Type: Article
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Several modifications of the InGaAsP double-channel buried-heterostructure laser diode are described with reduced parasitic capacitances in order to improve the modulation speed of the laser chip. The parasitic capacitances of the various devices are measured and the data are described in terms of an improved microwave circuit model for BH lasers. A modulation bandwidth of more than 3 GHz is experimentally obtained by means of proton isolation of the laser chip outside the active region.
Equivalent circuit and ECL ring oscillators of graded-bandgap base GaAs/AlGaAs HBTs
- Author(s): Y. Yamauchi and T. Ishibashi
- Source: Electronics Letters, Volume 22, Issue 1, p. 18 –20
- DOI: 10.1049/el:19860012
- Type: Article
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Equivalent circuit parameters of graded-bandgap base GaAs/AlGaAs heterojunction bipolar transistors are derived by analysing static and microwave characteristics. Here, the estimated base transit time of 1.4 ps indicates that the average electron velocity is enhanced under the built-in field of the graded base. Additionally, ECL ring oscillators are simulated using the obtained parameters. The simulated propagation delay time of ECL gates agrees well with an experimental result of as short as 65 ps/gate.
Controlling transformer saturation in the DC-isolated Cuk convertor
- Author(s): D.V. Otto and A.P. Glucina
- Source: Electronics Letters, Volume 22, Issue 1, p. 20 –21
- DOI: 10.1049/el:19860013
- Type: Article
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The problem of transformer saturation in the DC-isolated Cuk convertor is examined. A novel open-loop damping technique is developed to control transformer saturation. The new method is found to add significant damping without a noticeable degradation in convertor efficiency.
Shallow donor impurities in InP bulk crystals grown by the synthesis, solute-diffusion technique
- Author(s): E. Kubota ; A. Katsui ; S. Yamada
- Source: Electronics Letters, Volume 22, Issue 1, p. 21 –22
- DOI: 10.1049/el:19860014
- Type: Article
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Far-infra-red photoconductivity measurements are used to study residual shallow donor species in InP bulk crystals grown by the synthesis, solute-diffusion technique. The observation of 1s-2p, m =+ 1 Zeeman transitions between the shallow donor-impurity states reveals that two dominant residual donors are included in the InP bulk crystals having carrier concentrations of less than 1 × 1015 cm−3 The donors are tentatively identified as Si and S.
Synthesis of oscillator circuits employing only one unity-gain amplifier
- Author(s): N. Boutin
- Source: Electronics Letters, Volume 22, Issue 1, p. 22 –23
- DOI: 10.1049/el:19860015
- Type: Article
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A simple method to synthesise oscillator circuits employing only one unity-gain amplifier is presented. It is shown that any oscillator formed by one inverting infinite-gain ideal amplifier looped back by a perfect band-reject filter will automatically give rise, through a simple transformation, to an oscillator circuit employing only one unity-gain amplifier. It is further shown that the passive network must be at least a third-order band-reject filter.
Selective Zn diffusion in n-GaAs with a sputtered Si mask at 650°C
- Author(s): E. Omura ; G.A. Vawter ; L. Coldren ; J.L. Merz
- Source: Electronics Letters, Volume 22, Issue 1, p. 23 –24
- DOI: 10.1049/el:19860016
- Type: Article
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Zinc has been selectively diffused into n-GaAs substrates with a mask of Si deposited by magnetron sputtering at room temperature. No lateral enhanced diffusion along the substrate/mask interface is observed. At the diffusion temperature of 650°C studied here, no appreciable Si diffusion into the substrate is observed.
Fully differential bilinear integrator for SC filters
- Author(s): K. Chen and S. Eriksson
- Source: Electronics Letters, Volume 22, Issue 1, p. 24 –25
- DOI: 10.1049/el:19860017
- Type: Article
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A fully differential bilinear SC integrator, which can be used for SC filter realisations, is proposed. It is parasitic-insensitive and particularly useful in SC filters simulating analogue ladder networks. The design of these filters is different from the commonly used ones, and leads to filters with better sensitivity properties than earlier versions. Realisation of a third-order highpass filter, bilinearly transformed from the continuous-time to the discrete-time domain, is shown as an example.
Split-radix fast Hartley transform
- Author(s): Soo-Chang Pei and Ja-Ling Wu
- Source: Electronics Letters, Volume 22, Issue 1, p. 26 –27
- DOI: 10.1049/el:19860018
- Type: Article
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The split radix is used to develop a fast Hartley transform algorithm, it is performed ‘in-place’, and requires the lowest number of arithmetic operations compared with other related algorithms.
Properties of modes on perturbed fibres
- Author(s): S.J. Garth and C. Pask
- Source: Electronics Letters, Volume 22, Issue 1, p. 27 –28
- DOI: 10.1049/el:19860019
- Type: Article
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The terms in the Fourier series for the radius of a perturbed step-index optical fibre dictate which particular modes become truly LP and determine their optical axes; these axes need not coincide for different modes. Nonlinear optics experiments may be used to measure the perturbations.
New interpretation of spot-size measurements on singly clad single-mode fibres
- Author(s): C.D. Hussey and F. Martinez
- Source: Electronics Letters, Volume 22, Issue 1, p. 28 –30
- DOI: 10.1049/el:19860020
- Type: Article
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By using the Petermann spot size rather than the Marcuse spot size we suggest a slight modification to the Millar method for ESI determination which will allow the three parameters necessary for the EESI to be determined. The method is particularly useful for triangular-profile fibres.
Coherent lightwave transmission over 150 km fibre lengths at 400 Mbit/s and 1 Gbit/s data rates using phase modulation
- Author(s): R.A. Linke ; B.L. Kasper ; N.A. Olsson ; R.C. Alferness
- Source: Electronics Letters, Volume 22, Issue 1, p. 30 –31
- DOI: 10.1049/el:19860021
- Type: Article
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We report coherent lightwave systems experiments over 150 km employing phase modulation at speeds of 400 Mbit/s and 1 Gbit/s. Bit error rates lower than 10−9 were attained with no evidence of an error rate floor. Receiver sensitivities of −53.3 dBm and −44.5 dBm (10−9 BER) achieved at 400 Mbit/s and 1 Gbit/s with a new balanced mixer receiver correspond to improvements of 10.7 dB and 7.5 dB over the best previously published direct detection results.
Application of variational principle for calculation of resonant frequencies of cylindrical dielectric resonators
- Author(s): L.A. Bermudez and P.Y. Guillon
- Source: Electronics Letters, Volume 22, Issue 1, p. 31 –33
- DOI: 10.1049/el:19860022
- Type: Article
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In the letter we present a new method for the calculations of resonant frequencies of cylindrical dielectric resonators using the variational principle. This method is applicable for determining the resonant frequencies of cylindrical isolated and shielded dielectric resonators. Computations for all modes (TE, TM and HEM) are given.
2 Gbit/s and 2.4 Gbit/s optical transmission field trial over a 32 km installed route
- Author(s): L.C. Blank ; R.A. Garnham ; S.D. Walker
- Source: Electronics Letters, Volume 22, Issue 1, p. 33 –35
- DOI: 10.1049/el:19860023
- Type: Article
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High-speed optical data transmission at 2Gbit/s and 2.4 Gbit/s has been demonstrated for the first time over an installed fibre-optic cable. Error-free transmission with operating margins of 15.8 dB and 12 dB over 10−9 BER was achieved over a 32 km route. The systems featured a 1.5 μm DFB laser, Ge APD transimpedance receivers and full regeneration.
Electrical characteristics of silicon MOS structure formed by a novel low-temperature thermal oxidation method
- Author(s): J.-H. Yue ; Y. Uchida ; M. Matsumura
- Source: Electronics Letters, Volume 22, Issue 1, p. 35 –36
- DOI: 10.1049/el:19860024
- Type: Article
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Electrical characteristics of the native silicon-dioxide layer and its interface formed by a novel low-temperature thermal oxidation method have been evaluated. The resistivity and breakdown field strength were more than 1014 Ωcm and 4 MV/cm, respectively. The interface state density had a V-shaped distribution form and its minimum value was about 1011 cm2 eV.
Low-threshold InGaAsP/InP 1.3 μm doubly buried-heterostructure lasers with a reactive-ion-etched facet
- Author(s): H. Saito ; Y. Naguchi ; H. Nagai
- Source: Electronics Letters, Volume 22, Issue 1, p. 36 –38
- DOI: 10.1049/el:19860025
- Type: Article
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The angled reactive-ion-etching (RIE) technique utilising a TiO2 mask and Cl2-Ar gas is successfully applied to facet mirror fabrication of 1.3 μm InGaAsP/InP doubly buried-heterostructure (DBH) lasers. A typical CW operation threshold current is 22 mA at 25°C, and light output power from one facet exceeds 20 mW. The result of the preliminary aging test is also presented.
Timing recovery in optical receivers for NRZ signalling
- Author(s): R. Gangopadhyay and D. Datta
- Source: Electronics Letters, Volume 22, Issue 1, p. 38 –39
- DOI: 10.1049/el:19860026
- Type: Article
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The performance of a bit timing recovery scheme for NRZ signalling in an optical receiver employing an avalanche photodiode is investigated. The influence of pattern noise, bit transition jitter and receiver parameters on the bit timing jitter of the recovered clock is quantitatively assessed.
Monolithic integrated CMI coder and decoder for gigabit optical links
- Author(s): N. Yoshikai ; J.-I. Yamada ; M. Suzuki ; S. Konaka
- Source: Electronics Letters, Volume 22, Issue 1, p. 39 –41
- DOI: 10.1049/el:19860027
- Type: Article
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The high-speed performance of a monolithic integrated CMI coder and decoder, which are fabricated using super self-aligned process technology, is described. The maximum line rate is 3.07 Gbaud. The power consumptions of the coder and decoder are 0.54 W and 0 43 W, respectively. An optical CMI transmission experiment was performed using an InGaAsP/InP laser diode, a Ge APD and an integrated receiver with a SAW filter retiming circuit. When the quality factor Q was 830 at 1.8 Gbaud, random jitter was below 0.7°. In addition, it was confirmed that a clock signal can be extracted from any input data.
Direct measurement of chirped optical pulses with picosecond resolution
- Author(s): A.S.L. Gomes ; A.S. Gouveia-Neto ; J.R. Taylor
- Source: Electronics Letters, Volume 22, Issue 1, p. 41 –42
- DOI: 10.1049/el:19860028
- Type: Article
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Using a synchronously operating streak camera in conjunction with a 1 m monochromator the induced frequency chirp of an optical pulse on propagation over 2.2 km of single-mode optical fibre has been directly measured with picosecond resolution.
High-CMRR stray-insensitive switched-capacitor differential input stage for A/D convertors
- Author(s): K. Nagaraj and K. Singhal
- Source: Electronics Letters, Volume 22, Issue 1, p. 43 –44
- DOI: 10.1049/el:19860029
- Type: Article
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A new stray-insensitive switched-capacitor differential input circuit for A/D convertors is presented. This circuit, which uses only switches and capacitors, completely rejects common-mode signals regardless of the values of the design capacitors and the stray capacitances.
Reflection ultrasonic microspectrometer for a small quantity of liquid using correlation method
- Author(s): N. Chubachi ; T. Sannomiya ; K. Imano
- Source: Electronics Letters, Volume 22, Issue 1, p. 44 –46
- DOI: 10.1049/el:19860030
- Type: Article
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A correlation method has been only recently introduced into acoustic microscopical techniques for the measurement of frequency dependence of velocity and attenuation in a small quantity of liquid. The experiments have been demonstrated with drops of water (0.1−0.2 cm3) as a standard liquid material over the frequency range from 100 to 340 MHz. The system has been established with accuracy better than 0.2% and 3.9% for velocity and attenuation, respectively.
Security of public key distribution in matrix rings
- Author(s): V. Varadharajan and R. Odini
- Source: Electronics Letters, Volume 22, Issue 1, p. 46 –47
- DOI: 10.1049/el:19860031
- Type: Article
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In the letter the security of the public key distribution (PKD) system in matrix rings proposed by Odoni, Varadharajan and Sanders is investigated. In general, the strength depends on the difficulty of taking logarithms in finite cyclic groups.
Influence of device geometry on conductance DLTS spectra of GaAs MESFETs
- Author(s): S.R. Blight ; R.H. Wallis ; H. Thomas
- Source: Electronics Letters, Volume 22, Issue 1, p. 47 –48
- DOI: 10.1049/el:19860032
- Type: Article
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The observation of hole traps in small-signal GaAs MESFETs has been extensively reported in the literature and has been atributed to trapping at the active layer/substrate interface. Evidence is presented here to suggest that the main contribution to the ‘hole trap-like’ spectrum in conductance DLTS is the modulation of the surface depletion layer in the ungated access regions of the device.
Planar InGaAs PIN photodetectors grown by metalorganic chemical vapour deposition
- Author(s): R.D. Dupuis ; J.C. Campbell ; J.R. Velebir
- Source: Electronics Letters, Volume 22, Issue 1, p. 48 –50
- DOI: 10.1049/el:19860033
- Type: Article
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Planar InGaAs/InP heterostructure PIN photodiodes have been fabricated from structures grown by atmospheric-pressure metalorganic chemical vapour deposition. Diffused p-n junction devices of 75 μm diameter have low dark currents (~10 nA at −10 V), good quantum efficiencies (~50% without AR coatings) and response times less than 40 ps.
New OTA-capacitor realisation of a universal biquad
- Author(s): R. Nawrocki and U. Klein
- Source: Electronics Letters, Volume 22, Issue 1, p. 50 –51
- DOI: 10.1049/el:19860034
- Type: Article
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An active universal biquad built with operational-transconductance amplifiers (OTAs) is introduced. In addition to the OTAs only capacitors are required as passive devices. With the help of adjustable transconductances the set of filter parameters can be varied within a wide range.
Design of MURROMAF filters with preassigned pairs of transmission zeros at finite prescribed frequencies
- Author(s): P. Thajchayapong and Y. Rungsunseri
- Source: Electronics Letters, Volume 22, Issue 1, p. 51 –53
- DOI: 10.1049/el:19860035
- Type: Article
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A design technique for a multiple-real-root maximally flat (MURROMAF) filter with preassigned pairs of transmission zeros at finite prescribed frequencies is described. It provides the advantages of a sharper cutoff and also an effective noise suppression around particular frequencies, while retaining the maximally flat passband response.
Rapid nondestructive thickness measurement of opaque thin films on anisotropic substrates
- Author(s): G.M. Crean and A. Waintal
- Source: Electronics Letters, Volume 22, Issue 1, p. 53 –54
- DOI: 10.1049/el:19860036
- Type: Article
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A rapid, nondestructive opaque thin-film thickness measurement system is presented which takes into account the anisotropy of the sample under study and the geometry of the minature acoustic probe. Experimental results obtained using this system on W/Si (100) samples are in good agreement with those made using the Rutherford backscattering technique.
Bias reduction by polarisation dispersion in the fibre-optic gyroscope
- Author(s): E. Jones and J.W. Parker
- Source: Electronics Letters, Volume 22, Issue 1, p. 54 –56
- DOI: 10.1049/el:19860037
- Type: Article
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In a ‘reciprocal architecture’ FOG a single-mode filter is used to reduce bias drift resulting from changing fibre birefringence. We show that if a birefringent element is combined with this filter the bias is reduced if the dispersion in the element exceeds the source coherence length. This significantly relaxes the requirements for mode filter extinction.
Microcomputer implementation of a mimo pole-assignment self-tuning regulator
- Author(s): A.S. Morris and F. Mahieddine
- Source: Electronics Letters, Volume 22, Issue 1, p. 56 –58
- DOI: 10.1049/el:19860038
- Type: Article
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A modified implementation of the Prager and Wellstead multivariable self-tuning regulator is presented which achieves a substantial reduction in computational effort by avoiding the on-line solution of the complex pseudocommutativity relation. The speed and accuracy of the algorithm is demonstrated by its application with a Z80-based system to a simulated process.
Novel triode device using metal-insulator superlattice proposed for high-speed response
- Author(s): Y. Nakata ; M. Asada ; Y. Suematsu
- Source: Electronics Letters, Volume 22, Issue 1, p. 58 –59
- DOI: 10.1049/el:19860039
- Type: Article
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A novel resonant electron transfer triode (RETT), which uses electron resonant tunnelling utilising a metal-insulator multi-layer superlattice as an artificial semiconductor, is proposed. A possible high-speed response (response time of about τ = 0.3 ps and fT = 1/2πτ = 510 GHz at room temperature) is expected theoretically. It is also shown theoretically that this triode has common transistor static characteristics.
Erratum: Fused couplers of arbitrary cross-section
- Author(s): A.W. Snyder and Xue-Heng Zheng
- Source: Electronics Letters, Volume 22, Issue 1, page: 59 –59
- DOI: 10.1049/el:19860040
- Type: Article
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54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article