Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 22, Issue 15, 17 July 1986
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 22, Issue 15
17 July 1986
Calculation of characteristic impedance of planar structures using coupling and decoupling of hybrid modes in the spectral domain
- Author(s): K. Wu and P. Saguet
- Source: Electronics Letters, Volume 22, Issue 15, p. 769 –770
- DOI: 10.1049/el:19860527
- Type: Article
- + Show details - Hide details
-
p.
769
–770
(2)
A new techniue based on the spectral domain method for calculating the characteristic impedance of planar dispersive structures with multilayer dielectric substrates is presented. The coupling and decoupling of LSE and LSM modes are introduced so that the calculation of whole power in the considered structure bcomes very easy and fast. Numerical results are presented for some complex structures.
Wideband tunable 140 GHz second-harmonic InP-TED oscillator
- Author(s): A. Rydberg and E. Kollberg
- Source: Electronics Letters, Volume 22, Issue 15, p. 770 –771
- DOI: 10.1049/el:19860528
- Type: Article
- + Show details - Hide details
-
p.
770
–771
(2)
A second-harmonic InP-TED oscillator, with an output power of more than 3dBm at 144 GHz and tunable over a 10% frequency range, has been developed. The design incorporates two waveguide resonators. One resonator determines the fundamental frequency of oscillation and the other optimises the second-harmonic output power.
Endless polarisation control in coherent optical communications
- Author(s): R. Noé
- Source: Electronics Letters, Volume 22, Issue 15, p. 772 –773
- DOI: 10.1049/el:19860529
- Type: Article
- + Show details - Hide details
-
p.
772
–773
(2)
An endless polarisation control system is presented which transforms a given state of polarisation (SOP) into any desired one. It features four birefringent SOP control devices of only two different types. A microprocessor-based system in a heterodyne experiment confirms the theory.
GaAs monolithic analogue frequency halver
- Author(s): S.P. Stapleton ; M.G. Stubbs ; J.S. Wight
- Source: Electronics Letters, Volume 22, Issue 15, p. 773 –774
- DOI: 10.1049/el:19860530
- Type: Article
- + Show details - Hide details
-
p.
773
–774
(2)
A new 12 GHz GaAs monolithic analogue frequency halver is presented. The circuit uses two FETs to parametrically produce the subharmonic output frequency. A bandwidth of 650 MHz was obtained for an input power level of 14 dBm. The typical conversion loss was 9 dB.
Lightwave system using microwave subcarrier multiplexing
- Author(s): T.E. Darcie ; M.E. Dixon ; B.L. Kasper ; C.A. Burrus
- Source: Electronics Letters, Volume 22, Issue 15, p. 774 –775
- DOI: 10.1049/el:19860531
- Type: Article
- + Show details - Hide details
-
p.
774
–775
(2)
We present a demonstration of subcarrier multiplexing in a lightwave multiple-access network. Three 44 Mbit/s digital signals are transmitted along a single-mode fibre bus by intensity-modulating two 1.3 μ-wavelength, multimode laser diodes with FSK subcarriers, at frequencics between 3.5 and 4.0 GHz. Intermodulation distotion, generated when two or more subcarriers are transmitted by the same laser, does not degrade the tranmission quality.
Promotion of practical SIMOX technology by the development of a 100 mA-class high-current oxygen implanter
- Author(s): K. Izumi ; Y. Omura ; S. Nakashima
- Source: Electronics Letters, Volume 22, Issue 15, p. 775 –777
- DOI: 10.1049/el:19860532
- Type: Article
- + Show details - Hide details
-
p.
775
–777
(3)
A high-current oxygen implanter which has an acceleration energy of 200 keV and a beam current of 100 mA has been developed. This implanter has been used to form SIMOX wafers, on which p- and n-channel MOSFETs have been fabricated on a trial basis. Good electrical characteristics have been achieved with these MOSFETs. It has been shown that a 100 mA-class high-current oxygen implanter can promote SIMOX technology in a practical way.
New wideband GaAs travelling-wave device: linear gate transistor
- Author(s): A.J. Holden ; I. Davies ; P. Medhurst ; C.H. Oxley
- Source: Electronics Letters, Volume 22, Issue 15, p. 777 –778
- DOI: 10.1049/el:19860533
- Type: Article
- + Show details - Hide details
-
p.
777
–778
(2)
A new device called the linear the gate transistor (LGT) is described which promises in excess of 20 GHz flat-band performance in a single compact structure. The LGT is designed and modelled using a unique software package developed for all travelling-wave structures. Results from a prototype LGT are reported.
Accurate loop length determination in fibre-optic sensors and signal processors
- Author(s): M. Tur ; B.Y. Kim ; J.L. Brooks ; H.J. Shaw
- Source: Electronics Letters, Volume 22, Issue 15, p. 778 –780
- DOI: 10.1049/el:19860534
- Type: Article
- + Show details - Hide details
-
p.
778
–780
(3)
A technique is demonstrated for the accurate determination of differential propagation delays in fibre-optic circuits commonly found in sensing and signal processing arrays, utilising the high-order frequency filtering characteristics of these circuits. Relative time delays for two interferometers can be easily compared to within less than 10 ppm.
94 GHz transistor amplification using an HEMT
- Author(s): P.M. Smith ; P.C. Chao ; K.H.G. Duh ; L.F. Lester ; B.R. Lee
- Source: Electronics Letters, Volume 22, Issue 15, p. 780 –781
- DOI: 10.1049/el:19860535
- Type: Article
- + Show details - Hide details
-
p.
780
–781
(2)
Transistor amplification at 94 GHz has been demonstrated for the first time. A single-stage amplifier employing a high-electron-mobility transistor (HEMT) exhibits a small-signal gain of 3.6 dB and an output power of 3.4 mW with 2 dB gain.
InP/InGaAs double heterostructure bipolar transistors grown by MBE
- Author(s): P. Schuitemaker ; P.A. Claxton ; J.S. Roberts ; T.K. Plant ; P.A. Houston
- Source: Electronics Letters, Volume 22, Issue 15, p. 781 –783
- DOI: 10.1049/el:19860536
- Type: Article
- + Show details - Hide details
-
p.
781
–783
(3)
Double heterostructure bipolar transistors have been fabricated on InP/InGaAs MBE material. Current gains of up to 80 have been observed in the emitter-up configuration. The devices were fabricated using two diffusion techniques and selective etching to contact the base.
Frequency/voltage convertor with low output ripple
- Author(s): J.S. Reynolds
- Source: Electronics Letters, Volume 22, Issue 15, p. 783 –784
- DOI: 10.1049/el:19860537
- Type: Article
- + Show details - Hide details
-
p.
783
–784
(2)
A circuit is desdribed which performs linear frequency-to-voltage conversion with nominally zero output ripple and, at one frequency, ideal step response. This is in contrast to conventional convertors which have large output ripple, the removal of which necessarily produces slow response.
Heterojunction field-effect transistor (HFET)
- Author(s): G.W. Taylor and J.G. Simmons
- Source: Electronics Letters, Volume 22, Issue 15, p. 784 –786
- DOI: 10.1049/el:19860538
- Type: Article
- + Show details - Hide details
-
p.
784
–786
(3)
A new form of FET is proposed for implementation in a heterojunction material system such as AlGaAs/GaAs. The conducting channel is an inversion channel formed at the heterojunction interface by the use of molecular beam epitaxy. Thresholds are controlled by ion implantation as in silicon technology.
Calculation of relative single-polarisation bandwidth of side-pit fibres
- Author(s): A.N. Kaul ; A. Kumar ; K. Thyagarajan
- Source: Electronics Letters, Volume 22, Issue 15, p. 786 –787
- DOI: 10.1049/el:19860539
- Type: Article
- + Show details - Hide details
-
p.
786
–787
(2)
A simple and accurate method to calculate the normalised cutoff frequencies of the two fundamental modes of a side-pit fibre is given. The method can be used to design side-pit fibres with large relative single-polarisation bandwidth.
Helix antenna with optimised main-beam polarisation
- Author(s): U. Kraft and G. Mönich
- Source: Electronics Letters, Volume 22, Issue 15, p. 787 –789
- DOI: 10.1049/el:19860540
- Type: Article
- + Show details - Hide details
-
p.
787
–789
(3)
A helical antenna with a high degree of polarisation purity for directions near endfire is described. The antenna structure was optimised by numerical analysis of its polarisation properties. Theoretical and experimental results are presented.
Organic nonlinear optical waveguides formed by solvent-assisted indiffusion
- Author(s): M.J. Goodwin ; R. Glenn ; I. Bennion
- Source: Electronics Letters, Volume 22, Issue 15, p. 789 –791
- DOI: 10.1049/el:19860541
- Type: Article
- + Show details - Hide details
-
p.
789
–791
(3)
A technique is described for producing robust, low-loss waveguides from a wide range of organic nonlinear optical materials. The linear and nonlinear properties of waveguides produced by this solvent-assisted indiffusion process have been evaluated and intensity-dependent prism coupling demonstrated.
Linewidth requirement evaluation and 290 km transmission experiment for optical CPFSK differential detection
- Author(s): K. Iwashita ; T. Matsumoto ; C. Tanaka ; G. Motosugi
- Source: Electronics Letters, Volume 22, Issue 15, p. 791 –792
- DOI: 10.1049/el:19860542
- Type: Article
- + Show details - Hide details
-
p.
791
–792
(2)
The linewidth requirement for CPFSK differential detection is evaluated. CPFSK modulation of DFB-LD is confirmed from the spectrum correlation between an output spectrum and calculated results. In a 1.55 μm 400 Mbit/s transmission experiment using a 290 km pure-silica-core fibre, average received optical power at a 10−9 bit error rate is −49.9 dBm.
Novel method for characterisation of single-mode fibres and prediction of crossover wavelength and bandpass in nonidentical fibre directional couplers
- Author(s): R. Tewari ; K. Thyagarajan ; A.K. Ghatak
- Source: Electronics Letters, Volume 22, Issue 15, p. 792 –794
- DOI: 10.1049/el:19860543
- Type: Article
- + Show details - Hide details
-
p.
792
–794
(3)
We present here a novel and accurate method for the characterisation of single-mode fibres from a measurement of the wavelength dependence of the Petermann spot size. We also show its applicability in the prediction of the crossover wave length and bandpass in wavelength filters using nonidentical fibre directional couplers.
Successive approximation frequency-to-digital convertor for motor speed measurement
- Author(s): J. NieznaǸski
- Source: Electronics Letters, Volume 22, Issue 15, p. 794 –795
- DOI: 10.1049/el:19860544
- Type: Article
- + Show details - Hide details
-
p.
794
–795
(2)
A simple scheme for motor speed measurement is presented, which uses a successive approximation technique to perform frequency-to-digital conversion. The conversion time, expressed as a number of input frequency cycles, is equal to the bit size of the successive approximation register used.
External-cavity semiconductor laser with 15 nm continuous tuning range
- Author(s): F. Favre ; D. le Guen ; J.C. Simon ; B. Landousies
- Source: Electronics Letters, Volume 22, Issue 15, p. 795 –796
- DOI: 10.1049/el:19860545
- Type: Article
- + Show details - Hide details
-
p.
795
–796
(2)
A 1.26 μm optical amplifier with a facet modal reflectivity below 0.0001 has been used in a 58 mm-long grating external cavity. The lasing wavelength has been continuously tuned without mode hopping over a range of 15 nm by combined translation-rotation of the diffraction grating. A linewidth of 20 kHz has been derived from heterodyne beat frequency measurements between two tunable external-cavity lasers.
45° assumption in parallel-plate polariser design
- Author(s): J.H. Cloete
- Source: Electronics Letters, Volume 22, Issue 15, p. 796 –797
- DOI: 10.1049/el:19860546
- Type: Article
- + Show details - Hide details
-
p.
796
–797
(2)
The model underlying the standard parallel-plate polariser design equations is analysed using diffraction theory. It is shown that the usual 45° inclination angle yields an elliptically polarised field on axis with approximately 1 dB axial ratio at the design frequency, instead of the desired circular polarisation.
Linear transmission-line model analysis of arbitrary-shape patch antennas
- Author(s): G. Dubost
- Source: Electronics Letters, Volume 22, Issue 15, p. 798 –799
- DOI: 10.1049/el:19860547
- Type: Article
- + Show details - Hide details
-
p.
798
–799
(2)
A quasi-TEM lossy transmission-line model is used to express the radiation admittance of an arbitrary-shape symmetrical patch antenna which is linearly polarised. The then retical admittance is obtained from the solution of a Riccati differential general equation.
Realisation of tunable floating resistors
- Author(s): I.A. Khan and M.T. Ahmed
- Source: Electronics Letters, Volume 22, Issue 15, p. 799 –800
- DOI: 10.1049/el:19860548
- Type: Article
- + Show details - Hide details
-
p.
799
–800
(2)
Simple circuits using only two operational transeonductance amplifiers are given for the simulation of positive and negative resistors. The component values of these resistors are electronically tunable over several decades with bias voltage/current control. This makes the simulators very attractive for use in integrated circuits.
New CW imaging mode for scanning acoustic microscopy
- Author(s): F. Faridian ; M.G. Somekh ; I. Sakai
- Source: Electronics Letters, Volume 22, Issue 15, p. 800 –802
- DOI: 10.1049/el:19860549
- Type: Article
- + Show details - Hide details
-
p.
800
–802
(3)
The application of frequency-modulated continuous waves (FMCW) to the scanning acoustic microscope (SAM) is described. The technique provides a convenient way of separating specimen topography from reflectivity while enjoying the advantages of pulse compression. Furthermore, the system will enable sophisticated signal processing to be carried out at audio frequencies.
Extremely low threshold current 1.52 μm InGaAsP/InP MS-DFB lasers with second-order grating
- Author(s): H. Burkhard ; E. Kuphal ; H.W. Dinges
- Source: Electronics Letters, Volume 22, Issue 15, p. 802 –803
- DOI: 10.1049/el:19860550
- Type: Article
- + Show details - Hide details
-
p.
802
–803
(2)
Threshold currents of 1.52 μm InGaAsP/InPGaAsP/InP DFB lasers with second-order gratings have been reduced to 12 mA in single-longitudinal-mode operation. External differential efficiencies exceed 25%/feet with a λ/4 Si3N4 coating on the front facet.
Finite-element analysis for fused couplers
- Author(s): Xue-Heng Zheng
- Source: Electronics Letters, Volume 22, Issue 15, p. 804 –805
- DOI: 10.1049/el:19860551
- Type: Article
- + Show details - Hide details
-
p.
804
–805
(2)
By using the finite-element method we show that the polarisation beam splitting property of realistic fused optical couplers is well modelled by an elliptical cross-section, but differs substantially from a rectangular cross-section.
Low-loss magnetostatic wave delay line operating at 14.4 GHz
- Author(s): D.A. Willems and J.M. Owens
- Source: Electronics Letters, Volume 22, Issue 15, p. 805 –806
- DOI: 10.1049/el:19860552
- Type: Article
- + Show details - Hide details
-
p.
805
–806
(2)
A magnetostatic wave (MSW) delay line operating across a 600 MHz bandwidth at 14.4 GHz has been developed. The delay line has a maximum insertion loss of 21 dB, a minimum delay of 72 ns and a VSWR of less than 2.0:1, while occupying a volume of 4 in 3 (166.5 cm3). This unit weighs less than 16 oz (454 g).
New fabrication technique for integrated-optical taper with controllable profile by selective liquid-phase epitaxy of GaAs
- Author(s): Sang Bae Kim ; Kee Young Kwon ; Young Se Kwon
- Source: Electronics Letters, Volume 22, Issue 15, p. 806 –808
- DOI: 10.1049/el:19860553
- Type: Article
- + Show details - Hide details
-
p.
806
–808
(3)
A new fabrication technique for integrated-optical tapers with controllable profiles on a GaAs substrate by selective liquid-phase epitaxy is proposed based on two-dimensional numerical results, and preliminary experimental results are given. This technique takes advantage of the dependence of the epitaxial layer thickness on the window width.
CAD of Ka-band fin-line filters
- Author(s): J.S. Hong and S.M. Shi
- Source: Electronics Letters, Volume 22, Issue 15, p. 808 –809
- DOI: 10.1049/el:19860554
- Type: Article
- + Show details - Hide details
-
p.
808
–809
(2)
A procedure for computer-aided design of fin-line bandpass filters has been developed. Simplicity and accuracy are the features of this procedure owing to the application of a set of efficient close formulas for fin-line discontinuities.
FMCW of optical source envelope modulation for passive multiplexing of frequency-based fibre-optic sensors
- Author(s): K.I. Mallalieu ; R. Youngquist ; D.E.N. Davies
- Source: Electronics Letters, Volume 22, Issue 15, p. 809 –810
- DOI: 10.1049/el:19860555
- Type: Article
- + Show details - Hide details
-
p.
809
–810
(2)
An optical frequency-domain reflectometry technique is described as a method for multiplexing vibrating fibre-optic sensors. The system has been demonstrated with two vibrating elements resulting in an isolation of 38 dB
Modelling the MOS transistor at high frequencies
- Author(s): W. Sansen
- Source: Electronics Letters, Volume 22, Issue 15, p. 810 –812
- DOI: 10.1049/el:19860556
- Type: Article
- + Show details - Hide details
-
p.
810
–812
(3)
A new small-signal model of an MOS transistor, valid at high frequencies, is presented. As a major advantage compared with earlier models, this model takes into account the non-quasistatic and transmission-line effects of the transistor. By using S-parameter measurements, computer-controlled calibration techniques of test set-up and network analyser, mathematical transformations and fit routines, all the AC model parameters can be obtained.
Determination of refractive index of thick-film sealing glasses for optical waveguide applications
- Author(s): R.B. South and H. McDonough
- Source: Electronics Letters, Volume 22, Issue 15, p. 812 –813
- DOI: 10.1049/el:19860557
- Type: Article
- + Show details - Hide details
-
p.
812
–813
(2)
The refractive indices of a range of commercially produced thick-film sealing glasses have been determined from measurements of the Brewster angle. Values ranging from 1.61 to 1.82 have been found.
Electrostatic discharge testing of integrated circuits using step-stress transients or multiple transients
- Author(s): R.N. Shaw and R.D. Enoch
- Source: Electronics Letters, Volume 22, Issue 15, p. 813 –815
- DOI: 10.1049/el:19860558
- Type: Article
- + Show details - Hide details
-
p.
813
–815
(3)
A model has been developed which accounts for the damage behaviour of the on-chip input protection diode of an IC subjected either to multiple-transient testing or to step-stress testing.
Bipolar heterojunction transistor integrated circuits: design, modelling and characterisation
- Author(s): A.J. Holden ; C.G. Eddison ; J.G. Metcalfe ; R.C. Hayes
- Source: Electronics Letters, Volume 22, Issue 15, p. 815 –816
- DOI: 10.1049/el:19860559
- Type: Article
- + Show details - Hide details
-
p.
815
–816
(2)
Measured and modelled results are compared for bipolar heterojunction transistors (BHJTs) and integrated circuits. We describe a CAD package for the design of BHJTs and we report measured ECL ring oscillator gate delays of 50 ps. Divide-by-four circuits operate up to 1.6 GHz compared with a predicted value of 1.5 GHz.
Strictly nonblocking 8×8 integrated optical switch matrix
- Author(s): P. Granestrand ; B. Stoltz ; L. Thylen ; K. Bergvall ; W. Döldissen ; H. Heinrich ; D. Hoffmann
- Source: Electronics Letters, Volume 22, Issue 15, p. 816 –818
- DOI: 10.1049/el:19860560
- Type: Article
- + Show details - Hide details
-
p.
816
–818
(3)
We report on a strictly nonlocking 8×8 integrated optics switch matrix in Ti: LiNbO3. The matrix comprises 64 directional couplers on one chip. Insertion losses less than 7 dB have been measured. The extinction ratio has an average value of 30.5 dB for the directional couplers.
Optical time-domain reflectometry with centimetre resolution at 10−15 W sensitivity
- Author(s): G. Ripamonti and S. Cova
- Source: Electronics Letters, Volume 22, Issue 15, p. 818 –819
- DOI: 10.1049/el:19860561
- Type: Article
- + Show details - Hide details
-
p.
818
–819
(2)
We report photon-counting optical time-domain refiectometry tests performed at 0.83 μm wavelength with a special silicon detector, the single-photon avalanche diode (SPAD). High sensitivity and centimetre resolution are demonstrated, suitable for accurate local characterisation of fibre systems and components (connectors, couplers etc.).
Linear electro-optic effect in GexSi1−x/Si strained-layer superlattices
- Author(s): L. Friedman and R.A. Soref
- Source: Electronics Letters, Volume 22, Issue 15, p. 819 –821
- DOI: 10.1049/el:19860562
- Type: Article
- + Show details - Hide details
-
p.
819
–821
(3)
The bond-charge model of Jha and Bloembergen has been extended to ordered, pseudodiamond GexSi1−x/Si super-lattices to calculate the Pockels coefficient and the second-order susceptibility of these structures. We find that the Pockels coefficient is approximately 1 × 10−12 m/V over the near-infra-red range.
565 Mbit/s duplex transmission at 1300 nm over 50 km of single-mode optical fibre
- Author(s): G.P. Coombs
- Source: Electronics Letters, Volume 22, Issue 15, p. 821 –822
- DOI: 10.1049/el:19860563
- Type: Article
- + Show details - Hide details
-
p.
821
–822
(2)
Results are reported from a laboratory trial in which high-capacity duplex transmission has been demonstrated across a 50 km section of single-mode fibre. The system simultaneously transmits a 647 Mbaud signal in each direction at 1300 nm using BH lasers, Ge APD-based optical receivers and fused biconical-taper directional couplers.
Analysis of waveguide scattering problems by the spectral domain method
- Author(s): Q. Zhang and T. Itoh
- Source: Electronics Letters, Volume 22, Issue 15, p. 822 –823
- DOI: 10.1049/el:19860564
- Type: Article
- + Show details - Hide details
-
p.
822
–823
(2)
The spectral domain technique has been modified for analysis of scattering from a planar obstacle in a waveguide. Validity of the method is confirmed by comparison with published data for a special case.
Dielectric characteristics of snow in microwave frequency
- Author(s): S. Koizumi ; K. Sato ; T. Sato ; M. Shimba
- Source: Electronics Letters, Volume 22, Issue 15, p. 823 –825
- DOI: 10.1049/el:19860565
- Type: Article
- + Show details - Hide details
-
p.
823
–825
(3)
The relative dielectric constant εr and dielectric loss tan δ of snow are measured at 9.5 GHz under several temperature and density conditions. The received microwave level degradation of an aperture antenna with snow on it is explained quantitatively by using the obtained dielectric characteristics.
Optical heterodyne image-rejection mixer
- Author(s): T.E. Darcie and B. Glance
- Source: Electronics Letters, Volume 22, Issue 15, p. 825 –826
- DOI: 10.1049/el:19860566
- Type: Article
- + Show details - Hide details
-
p.
825
–826
(2)
We demonstrate an optical-frequency image-rejection mixer, which provides 20 dB image rejection at an IF frequency of 1.7 GHz and is insensitive to fluctuations in the dimensions of the optical circuit. This mixer is especially useful in coher ent heterodyne optical networks using frequency-division multiplexing.
Erratum: Loss of lock in long-loop phase-locked receivers in the presence of large interfering carrier
- Author(s): S.D. Marougi
- Source: Electronics Letters, Volume 22, Issue 15, page: 826 –826
- DOI: 10.1049/el:19860567
- Type: Article
- + Show details - Hide details
-
p.
826
(1)
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article
