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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 22, Issue 14, 3 July 1986

Volumes & issues:

Volume 22, Issue 14

3 July 1986

High-frequency voltage-controlled continuous-time lowpass filter using linearised CMOS integrators
  • Author(s): A.P. Nedungadi  and  R.L. Geiger
  • Source: Electronics Letters, Volume 22, Issue 14, p. 729 –730
  • DOI:  10.1049/el:19860500
  • Type: Article
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  • p. 729 –730 (2)
    The design and implementation of a continuous-time lowpass filter with voltage-controlled cutoff frequency and passband ripple is presented. The circuit uses a linearised CMOS transconductor as a basic integrating building block. A voltage-controlled phase-adjusting scheme is employed in the integrator to compensate for excess phase in the transconductance at high frequencies. The fabricated filter is capable of realising cutoff frequencies as high as 2 MHz and handles single-ended input signals up to 4 V p-p with less than 1% distortion.
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Comment: Wideband frequency response measurement of photodetectors using optical heterodyne detection technique
Reply: Wideband frequency response measurement of photodetectors using optical heterodyne detection technique
High return loss connector design without using fibre contact or index matching
Novel structure for television picture noise reduction
Proposal for simplified WDM transmission configuration
  • Author(s): H. Uno  and  N. Aragaki
  • Source: Electronics Letters, Volume 22, Issue 14, p. 734 –735
  • DOI:  10.1049/el:19860505
  • Type: Article
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  • p. 734 –735 (2)
    A new WDM (wavelength division multiplexing transmission configuration for local communications is proposed. In this configuration, the demultiplexing function is performed using narrow spectral sensitivity optical detectors and a demultiplexer is not required, allowing economical and simple WDM transmission. Dual-wavelength WDM transmission of 0.86 μm and 0.73 μm over 2 km on GI fibre is experimentally confirmed, using commercially available LEDs for both optical sources and detectors.
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Tetrahedrons, edges and nodes in 3-D finite-element meshes
High-sensitivity low-frequency magnetometer using magnetostrictive primary sensing and piezoelectric signal recovery
Hybrid mode-locking of an angled-stripe C3laser
  • Author(s): P. Phelan  and  D.J. Bradley
  • Source: Electronics Letters, Volume 22, Issue 14, p. 738 –739
  • DOI:  10.1049/el:19860508
  • Type: Article
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  • p. 738 –739 (2)
    An antireflection-coated angled-stripe two-section C3laser has been mode-locked in an external cavity by application of sinusoidal modulation at the cavity round-trip frequency to the section providing gain while the other section provides saturable loss. Pulses less than 20 ps in duration with low noise and background intensity are obtained subject to the relaxed operational tolerances characteristic of hybrid mode-locking.
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Two-dimensional device simulator for laser diodes: HILADIES
Frequency-modulation characteristics of semiconductor lasers: deviation from theoretical prediction by rate equation analysis
  • Author(s): K. Kikuchi ; T. Fukushima ; T. Okoshi
  • Source: Electronics Letters, Volume 22, Issue 14, p. 741 –742
  • DOI:  10.1049/el:19860510
  • Type: Article
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  • p. 741 –742 (2)
    The frequency modulation characteristics of 1.3 μm InGaAsP DFB BH lasers are measured when the bias current is slightly modulated by a sinusoidal waveform. Two deviations from the prediction by the rate equations are observed. One is that the phase difference between the frequency deviation and the modulation current approaches 180° below the relaxation resonance, and the other is that the ratio of the frequency modulation index to the amplitude modulation index has a strong frequency dependence. Both of the results are well explained by the two-section model, in which the inhomogeneous distribution of the spectral width enhancement factor α is assumed.
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Interchangeable terminals in channel routing problem
  • Author(s): D. Bisztray
  • Source: Electronics Letters, Volume 22, Issue 14, p. 743 –744
  • DOI:  10.1049/el:19860511
  • Type: Article
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  • p. 743 –744 (2)
    The traditional channel routing problem is known to be solvable, if and only if the constraint graph is acyclic. In the letter we examine channels with two-terminal nets without doglegging and assume that some terminals are interchangeable. A necessary and sufficient condition is established for the interchangeability of the points to ensure solvability. Regular channel structures, like those in gate arrays, are compared. The routability condition is shown to be weaker if noninter-changeable points have different abscissas.
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High-speed and precise monolithic multiplier with radiation hardness using silicon bipolar SST
  • Author(s): M. Umehira ; H. Kikuchi ; S. Konaka ; S. Kato
  • Source: Electronics Letters, Volume 22, Issue 14, p. 744 –746
  • DOI:  10.1049/el:19860512
  • Type: Article
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  • p. 744 –746 (3)
    A high-speed and precise monolithic analogue multiplier with radiation hardness for high-speed onboard modems has been developed using Si-bipolar SST (super self-aligned process technology). The developed multiplier achieves an amplitude error of less than 0.2 dB p-p and a phase error of less than 2 degrees p-p up to 1 GHz. Moreover, radiatio hardness tests have proved the multiplier has a total dose. immunity up to 106rad (Si).
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Analysis and applications of modified coupled coplanar lines
Wideband HEMT balanced amplifier
  • Author(s): J.J. Komiak
  • Source: Electronics Letters, Volume 22, Issue 14, p. 747 –749
  • DOI:  10.1049/el:19860514
  • Type: Article
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  • p. 747 –749 (3)
    The high electron mobility transistor (HEMT) has demonstrated great potential for high-gain and low-noise applications, achieving a noise figure and current gain cutoff frequency fT superior to that of the GaAs MESFET. The letter presents the practical use of an HEMT in a hybrid wideband balanced amplifier covering 8.5 to 16 GHz producing 9.7 ± 0.5 dB gain and 2.6 dB midband noise figure. The performance is also compared to a GaAs MESFET stage.
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Second-derivative routing algorithms
  • Author(s): F. Pavlidou  and  S.S. Kouris
  • Source: Electronics Letters, Volume 22, Issue 14, p. 749 –750
  • DOI:  10.1049/el:19860515
  • Type: Article
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  • p. 749 –750 (2)
    An approximation of Newton's method has been used recently in routing algorithms in computer networks, which is based on the assumption that the matrix of second derivatives of the objective function (Hessian) is diagonal. It is demonstrated that in message-switched networks some specific nondiagonal elements exist and therefore the Hessian is not diagonal. Moreover, it is found that these elements are of the same order as the diagonal ones.
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Efficient serial/parallel inner-product computation
  • Author(s): S.G. Smith
  • Source: Electronics Letters, Volume 22, Issue 14, p. 750 –752
  • DOI:  10.1049/el:19860516
  • Type: Article
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  • p. 750 –752 (3)
    A class of serial/parallel architectures for inner-product computation is described, based on carry-save accumulator arrays. In their basic form such arrays form carry-save multiply/adders. A simple modification of the coefficient feed allows flexible extension to short vector inner-product computation using distributed arithmetic. These modules may be cascaded to handle longer vectors, forming high-level VLSI digital signal processing subsystems.
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Transmission properties of 2.55 μm fluoride glass fibre
Monolithic integration of GaAs photoconductors with a field-effect transistor
Low-loss slow-wave propagation along a microstructure transmission line on a silicon surface
  • Author(s): V.M. Hietala ; Y.P. Kwon ; K.S. Champlin
  • Source: Electronics Letters, Volume 22, Issue 14, p. 755 –756
  • DOI:  10.1049/el:19860519
  • Type: Article
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  • p. 755 –756 (2)
    We report observations of relatively low-loss propagation in the frequency range of 1.0 to 12.4 GHz using a micrometer-size coplanar MIS transmission line fabricated on a heavily doped N+ silicon surface. This low-loss mode of propagation is found to be accompanied by significant wavelength reduction which suggests that such lines may be useful as transmission media for distributed components in silicon monolithic microwave integrated circuits (MMICs).
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Thin-film polariser for Ti:LiNbO3 waveguides at λ=1.3μm
Tunable sonar transducer
Power-dependent enhancement in repeater spacing for dispersion-limited optical communication systems
  • Author(s): M.J. Potasek  and  G.P. Agrawal
  • Source: Electronics Letters, Volume 22, Issue 14, p. 759 –760
  • DOI:  10.1049/el:19860522
  • Type: Article
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  • p. 759 –760 (2)
    We have found numerically an intensity-dependent increase in the repeater spacing for dispersion-limited lightwave transmission systems. The enhancement is due to the combination of nonlinearity and anomalous dispersion occurring in conventional fibres at 1.55 μm. For moderate powers we find about a factor of two enhancement in the repeater distance compared to the linear case. We also investigate the effects of laser frequency chirp.
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Gbit/s transmission experiments with a 1.3 μm high-speed surface-emitting LED and multimode graded-index fibre
  • Author(s): W.C. King  and  N.A. Olsson
  • Source: Electronics Letters, Volume 22, Issue 14, p. 761 –762
  • DOI:  10.1049/el:19860523
  • Type: Article
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  • p. 761 –762 (2)
    Using a 1.3 μm wide-bandwidth surface-emitting LED, transmission experiments were performed with 50/125 μm multimode, graded-index fibre. Pulse shaping and equalisation were used in achieving a 10-9 bit-error rate at 1.0 Gbit/s over 3.0 km with a system margin of 1.1 dB. At 500 Mbit/s the margin increased to 7.0 dB. The 3.0 Gbit km/s data rate-distance product represents a new level of performance for a surface-emitting LED and multimode fibre.
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35 GHz Varactor analogue phase modulator in integrating waveguide technology
  • Author(s): J. Modelski  and  J.H. Hinken
  • Source: Electronics Letters, Volume 22, Issue 14, p. 762 –763
  • DOI:  10.1049/el:19860524
  • Type: Article
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  • p. 762 –763 (2)
    Design method, fabrication process and measurement results of a linear analogue phase modulator in Ka-band with abrupt varactor diode are presented. The modulator was realised in integrating waveguide technology, which is based on a completely dielectric-filled rectangular waveguide. The 180° phase shift over the frequency band 34.3–35.4 GHz has been received with phase nonlinearity less than 3.5% and insertion loss of 3 ± 0.4 dB.
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Broadening of bandwidths in grating multiplexer by original dispersion-dividing prism
Local charge influence on impurity diffusion in semiconductors

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