Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 22, Issue 12, 5 June 1986
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 22, Issue 12
5 June 1986
Compensation of line-broadening factor in twin-stripe semiconductor lasers and improved modulation potential
- Author(s): G.H.B. Thompson
- Source: Electronics Letters, Volume 22, Issue 12, p. 621 –622
- DOI: 10.1049/el:19860425
- Type: Article
- + Show details - Hide details
-
p.
621
–622
(2)
A concept for a twin-stripe semiconductor laser is presented in which the simultaneous gain and refractive index variation induced by carriers injected into one stripe can be converted into either a pure amplitude or a pure frequency variation in the lasing supermode. Applications include high-frequency chirp-free amplitude modulation, reduced line width and pure phase modulation.
Electro-optic tunable filter
- Author(s): I.C. Chang
- Source: Electronics Letters, Volume 22, Issue 12, p. 622 –623
- DOI: 10.1049/el:19860426
- Type: Article
- + Show details - Hide details
-
p.
622
–623
(2)
Theoretical analysis of electro-optic tunable filters (EOTFs) using colinear and noncolinear interactions is presented. An effective electro-optic coefficient is derived for various classes of birefringent crystal. We propose to implement the EOTF using the nonlinear photorefractive effect. The photorefractive EOTF can be used for optical storage.
New analysis of microbending losses in single-mode fibres
- Author(s): M. Artiglia ; G. Coppa ; P. di Vita
- Source: Electronics Letters, Volume 22, Issue 12, p. 623 –625
- DOI: 10.1049/el:19860427
- Type: Article
- + Show details - Hide details
-
p.
623
–625
(3)
A new and powerful analysis of microbending in generic single-mode fibres is outlined. The calculation avoids cumbersome evaluations of the coupling coefficients and allows the derivation of a simple and better approximated expression for the microbending losses. More severe upper and lower bounds to the possible losses are also provided.
Generation currents, noise and auger suppression in intrinsic diodes
- Author(s): A.M. White and R.G. Humphreys
- Source: Electronics Letters, Volume 22, Issue 12, p. 625 –626
- DOI: 10.1049/el:19860428
- Type: Article
- + Show details - Hide details
-
p.
625
–626
(2)
The total diffusion-limited current and shot noise in intrinsic diodes do not depend explicitly on the detailed forms of the individual generation processes, but only on the current and noise of each process acting in isolation. Auger-like processes are relatively suppressed in high reverse bias.
Hybrid modes in a dielectric lined conical waveguide
- Author(s): J. Stanier and M. Hamid
- Source: Electronics Letters, Volume 22, Issue 12, p. 626 –627
- DOI: 10.1049/el:19860429
- Type: Article
- + Show details - Hide details
-
p.
626
–627
(2)
The letter presents a new conical structure which can support the spherical hybrid modes associated with a corrugated conical waveguide. The analysis closely follows that of hybrid modes in a corrugated conical waveguide. It is found that, to obtain hybrid modes in a dielectric lined conical waveguide, it is necessary to taper the dielectric constant of the lining.
Optimisation of spacer layer thickness in n-AlxGa1−xAs/p+-GaAs heterojunction diodes grown by molecular beam epitaxy
- Author(s): B. Khamsehpour ; K.E. Singer ; J.A. Van Den Berg ; J.C. Vickerman
- Source: Electronics Letters, Volume 22, Issue 12, p. 627 –629
- DOI: 10.1049/el:19860430
- Type: Article
- + Show details - Hide details
-
p.
627
–629
(3)
The effect of an undoped GaAs spacer layer at the heterojunction interface of MBE-grown n-AlxGa1−xAs/p+-GaAs diodes has been investigated by electroluminescence, dynamic secondary ion mass spectrometry and current/voltage measurements. A consistent picture emerges of the role of the spacer layer in accommodating beryllium migration. A simple procedure to optimise the spacer layer thickness is suggested.
60 GHz BARITT diodes as self-oscillating mixers
- Author(s): U. Güttich
- Source: Electronics Letters, Volume 22, Issue 12, p. 629 –630
- DOI: 10.1049/el:19860431
- Type: Article
- + Show details - Hide details
-
p.
629
–630
(2)
The fabrication of Pt np+ silicon baritt diodes for V-band frequencies is described. An oscillating output power of 1 mW at 60 GHz could be attained. The diodes were investigated as self-oscillating mixers in Doppler-radar and local-oscillator applications. A conversion gain of 26 dB and a minimum detectable signal of −160 dBm (1 Hz bandwidth) could be measured near the carrier.
Limits of FET modelling by lumped elements
- Author(s): W. Heinrich
- Source: Electronics Letters, Volume 22, Issue 12, p. 630 –632
- DOI: 10.1049/el:19860432
- Type: Article
- + Show details - Hide details
-
p.
630
–632
(3)
Common lumped-element FET modelling is compared with the equivalent distributed-element formulation. The deviations are studied and the validity range of such lumped-element models is shown.
Effect of Au:Ge thickness on ohmic contacts to GaAs
- Author(s): F. Lønnum and J.S. Johannessen
- Source: Electronics Letters, Volume 22, Issue 12, p. 632 –633
- DOI: 10.1049/el:19860433
- Type: Article
- + Show details - Hide details
-
p.
632
–633
(2)
The GaAs/Au:Ge/Ni system has been studied at ELAB by varying the metal thicknesses and the temperature/time alloying profile. The results of the study suggest that there exists an optimal thickness of the metallisation and alloying time with respect to contact resistivity, for given ion implantation parameters.
Millimetre-waveguide-mounted InGaAs photodetectors
- Author(s): J.E. Bowers ; C.A. Burrus ; F. Mitschke
- Source: Electronics Letters, Volume 22, Issue 12, p. 633 –635
- DOI: 10.1049/el:19860434
- Type: Article
- + Show details - Hide details
-
p.
633
–635
(3)
We describe the design and characteristics of InGaAs PIN photodetectors mounted in microwave waveguides for use in transmission of millimetre-wave modulation signals on optical carriers. For an experimental device operating to 60 GHz (5 mm wavelength), we show the wavelength dependence of responsivity, the spatial uniformity of response and the bias dependence of modulation bandwidth.
Sine-wave generation using a high-order lowpass switched-capacitor filter
- Author(s): H.M. Sandler and A.S. Sedra
- Source: Electronics Letters, Volume 22, Issue 12, p. 635 –636
- DOI: 10.1049/el:19860435
- Type: Article
- + Show details - Hide details
-
p.
635
–636
(2)
A switched-capacitor filter may be used to generate a sine wave by filtering a square wave derived from the filter's clock. Using a high-order, rather than a second-order, filter eliminates the need for a precision high-Q filter response. With a seventh-order elliptic filter, this method achieved 0.07% total harmonic distortion.
Low dark current GaAs/AlAs graded-parameter superlattice PIN photodetector
- Author(s): N.R. Couch ; D.G. Parker ; M.J. Kelly ; T.M. Kerr
- Source: Electronics Letters, Volume 22, Issue 12, p. 636 –637
- DOI: 10.1049/el:19860436
- Type: Article
- + Show details - Hide details
-
p.
636
–637
(2)
Preliminary measurements of the photoresponse of a GaAs p-n junction containing an undoped asymmetric GaAs/AlAs superlattice are presented. Very low reverse-bias dark currents (<6×10−8 A/cm2 at 3 V) are measured, while still retaining the speed and spectral response of a conventional GaAs PIN diode. The −3 dB bandwidth is found to be greater than 1 GHz, and the responsivity is 0.1 A/W.
Reflection high-energy electron diffraction from lithium niobate single-crystal surfaces for application in molecular beam epitaxy
- Author(s): M. Petrucci and C.W. Pitt
- Source: Electronics Letters, Volume 22, Issue 12, p. 637 –639
- DOI: 10.1049/el:19860437
- Type: Article
- + Show details - Hide details
-
p.
637
–639
(3)
A modified RHEED system has been constructed to study nonconductive crystal lithium niobate (LiNbO3) using electron energies up to 50 keV. The problems encountered are discussed and preliminary results presented. We outline the potential use of the technique in the routine analysis of insulating substrates prior to the deposition of epitaxial layers by MBE, and in the examination of the deposited layers.
Geometric birefringence in fibres due to asymmetric cladding
- Author(s): X.H. Zheng
- Source: Electronics Letters, Volume 22, Issue 12, p. 639 –640
- DOI: 10.1049/el:19860438
- Type: Article
- + Show details - Hide details
-
p.
639
–640
(2)
A simple and accurate method is devised to calculate the geometric birefringence of optical fibres with asymmetric claddings. The method gives analytical results near the cutoff or transition frequencies of the guided modes. It is found that some asymmetric claddings cannot be used to introduce birefringence effects near the cutoff or transition frequencies.
New sequences for asynchronous frequency-hopping multiplex
- Author(s): B.M. Popovic
- Source: Electronics Letters, Volume 22, Issue 12, p. 640 –642
- DOI: 10.1049/el:19860439
- Type: Article
- + Show details - Hide details
-
p.
640
–642
(3)
A new method for generating large sets of sequences for frequency-hopping multiplex, when arbitrary or bounded mutual asynchronity is present, is presented. The sequences are of length Q, with elements from GF(Q); Q is prime. The maximal number of sequences in the sets is very close to the theoretical bounds.
Self-adjusted permanent attachment of fibres to GaAs waveguide components
- Author(s): H. Kaufmann ; P. Buchmann ; R. Hirter ; H. Melchior ; G. Guekos
- Source: Electronics Letters, Volume 22, Issue 12, p. 642 –644
- DOI: 10.1049/el:19860440
- Type: Article
- + Show details - Hide details
-
p.
642
–644
(3)
We present a self-aligned flip-chip mounting technique for permanent coupling of single-mode fibres to rib waveguides By help of reactive-ion-etched alignment ribs and preferentially etched silicon V-grooves, self-adjusted alignment with excess coupling loss as low as 0.3 dB has been achieved.
Analysis of symmetric Y-junction laser arrays with uniform near-field distribution
- Author(s): Kuo-Liang Chen and Shyh Wang
- Source: Electronics Letters, Volume 22, Issue 12, p. 644 –645
- DOI: 10.1049/el:19860441
- Type: Article
- + Show details - Hide details
-
p.
644
–645
(2)
The analysis of a Y-junction laser array is presented. It is shown that the lowest-order cavity mode of this array has the lowest threshold gain and is thus preferentially excited. This mode has a uniform near-field distribution. Compared with the sinusoidal near-field distribution of the supermodes of the evanescently coupled laser arrays, this uniformity not only can delay the onset of the spatial-hole burning, which is the source of unstable far-field characteristic at high power level, it also allows for higher total power output before catastrophic mirror damage.
Optical and electronic reduction of Rayleigh backscatter noise in fibre-coupled semiconductor diode lasers
- Author(s): A. Yurek and A. Dandridge
- Source: Electronics Letters, Volume 22, Issue 12, p. 645 –647
- DOI: 10.1049/el:19860442
- Type: Article
- + Show details - Hide details
-
p.
645
–647
(3)
Optical and electronic feedback techniques have been implemented to reduce the noise induced by Rayleigh backscatter in a semiconductor laser endfire-coupled to an optical fibre. An intensity noise reduction of 12 dB and a frequency noise reduction of 30 dB were observed.
60 GHz low-noise high-electron-mobility transistors
- Author(s): K.H.G. Duh ; P.C. Chao ; P.M. Smith ; L.F. Lester ; B.R. Lee
- Source: Electronics Letters, Volume 22, Issue 12, p. 647 –649
- DOI: 10.1049/el:19860443
- Type: Article
- + Show details - Hide details
-
p.
647
–649
(3)
The noise performance of 0.25 μm-gate-length high-electron-mobility transistors at frequencies up to 62 GHz is reported. A room-temperature extrinsic transconductance gm of 480 mS/mm and a maximum frequency of oscillation fmax of 135 GHz are obtained for these transistors. At 30 and 40 GHz the devices exhibit minimum noise figures of 1.5 and 1.8 dB with associated gains of 10.0 and 7.5 dB, respectively. A minimum noise figure as low as 2.7 dB with an associated gain of 3.8 dB has also been measured at 62 GHz. This is the best noise performance ever reported for HEMTs at millimetre-wave frequencies. The results clearly demonstrate the potential of short-gate-length high-electron-mobility transistors for very low-noise applications for frequencies at least up to V-band.
Improving the optimum generalised stop-and-wait ARQ scheme
- Author(s): D.S. Babu and T.S. Vedavathy
- Source: Electronics Letters, Volume 22, Issue 12, p. 649 –650
- DOI: 10.1049/el:19860444
- Type: Article
- + Show details - Hide details
-
p.
649
–650
(2)
Instead of waiting for the acknowledgments from all the copies of a single data block sent, as in the optimum generalised stop-and-wait ARQ scheme, the transmitter in the proposed scheme starts sending an optimum number of copies of the next block in the queue, soon after receiving the positive acknowledgment from the receiver, thereby further improving the throughput efficiency.
Measurement of real-time digital signals in a silicon bipolar junction transistor using a noninvasive optical probe
- Author(s): H.K. Heinrich ; B.R. Hemenway ; K.A. McGroddy ; D.M. Bloom
- Source: Electronics Letters, Volume 22, Issue 12, p. 650 –652
- DOI: 10.1049/el:19860445
- Type: Article
- + Show details - Hide details
-
p.
650
–652
(3)
We report optical charge sensing of real-time 0.8 V digital signals in a silicon bipolar transistor in a 20 MHz bandwidth using a 1.3 μm semiconductor laser, and in a 100 MHz bandwidth using a 1.3 μm Nd:YAG laser. The probe is noninvasive, inducing a transistor base current of less than 10 nA.
Monolithic integration of InGaAs/InP PIN PD with MISFET on stepless substrate
- Author(s): K. Ohtsuka ; H. Sugimoto ; Y. Abe ; T. Matsui ; H. Ogata
- Source: Electronics Letters, Volume 22, Issue 12, p. 652 –653
- DOI: 10.1049/el:19860446
- Type: Article
- + Show details - Hide details
-
p.
652
–653
(2)
A low-dark-current (1–2 nA) InGaAs/InP single-heterostructure planar PIN PD was fabricated and integrated with an InP MISFET on stepless substrates. The characteristics of the PIN PD did not change with integration.
High-performance SAW dispersive delay line using reflective thin metal dot arrays
- Author(s): F. Huang ; E.G.S. Paige ; D.R. Selviah
- Source: Electronics Letters, Volume 22, Issue 12, p. 653 –654
- DOI: 10.1049/el:19860447
- Type: Article
- + Show details - Hide details
-
p.
653
–654
(2)
The first U-path surface-acoustic-wave (SAW) reflective array compressor (RAC) employing reflective arrays of thin metal dots on lithium niobate is reported. The thin rectangular metal dots are made together with the transducers in a single photolithographic step. Performance comparable with that of large time-bandwidth, conventional, grooved RACs is demonstrated, in good agreement with the design.
Iterative integral equation solution for cylindrical dielectric resonator
- Author(s): A.P. Lewis ; J.P. McGeehan ; T.E. Rozzi
- Source: Electronics Letters, Volume 22, Issue 12, p. 654 –656
- DOI: 10.1049/el:19860448
- Type: Article
- + Show details - Hide details
-
p.
654
–656
(3)
An exact integral equation describing the substrate-mounted open cylindrical dielectric resonator is derived, and a first approximate solution for the fundamental resonant mode is calculated. Results are presented and are compared with both experiment and another theoretical approach.
Rain attenuation successive fade durations and time intervals between fades in a satellite-Earth link
- Author(s): E. Matricciani and M. Mauri
- Source: Electronics Letters, Volume 22, Issue 12, p. 656 –658
- DOI: 10.1049/el:19860449
- Type: Article
- + Show details - Hide details
-
p.
656
–658
(3)
Long-term attenuation data at 11.6 GHz, obtained in a Sirio link, are analysed to provide information on the joint statistics between successive fade durations within a rain event (intrafade) and between different rain events (interfade). The results show that successive fade durations and the interfade or intrafade intervals are approximately statistically independent. Within the same rain event, interfades and fade durations longer than 10 s are statistically identical. These data may be important for planning adaptive systems and for devising prediction models of the dynamic behaviour of rain attenuation.
Pseudocoherent FSK demodulation
- Author(s): A.V. Shah ; K.H.S. Rao ; A. Kapetanovic
- Source: Electronics Letters, Volume 22, Issue 12, p. 658 –659
- DOI: 10.1049/el:19860450
- Type: Article
- + Show details - Hide details
-
p.
658
–659
(2)
A novel scheme of a ‘pseudocoherent’ FSK demodulator is proposed. Computer simulation and hardware-measured test results are given. It is shown that this new scheme gives lower bit error rates than the noncoherent demodulator, but has a comparable circuit complexity. Furthermore, its filtering requirements are minimal; this fact makes it especially suitable for a low-cost integrated FSK modem.
Monolithic superconductor-base hot-electron transistors with large current gain
- Author(s): T. Kobayashi ; H. Sakai ; M. Tonouchi
- Source: Electronics Letters, Volume 22, Issue 12, p. 659 –661
- DOI: 10.1049/el:19860451
- Type: Article
- + Show details - Hide details
-
p.
659
–661
(3)
A GaAs/Nb/InSb monolithic metal-base hot-electron transistor was newly developed and its transistor action was investigated. The common-base current amplification factor as high as 0.8 was attained for a 200 Å-thick Nb base when the device was cooled down to the cryogenic temperature.
Pipelined carry look-ahead adder
- Author(s): D.G. Crawley and G.A.J. Amaratunga
- Source: Electronics Letters, Volume 22, Issue 12, p. 661 –662
- DOI: 10.1049/el:19860452
- Type: Article
- + Show details - Hide details
-
p.
661
–662
(2)
A pipelined carry look-ahead adder is described which is particularly suitable for use with a pipelined parallel multiplier, but would also be useful for other pipelined systems. The adder is compared with a pipelined ripple-carry adder having a triangular structure and the nonpipelined form of the carry look-ahead adder and is shown to possess the advantages of small stage delay and short flush time.
Universal active filter using current conveyors
- Author(s): C. Toumazou and F.J. Ledgey
- Source: Electronics Letters, Volume 22, Issue 12, p. 662 –664
- DOI: 10.1049/el:19860453
- Type: Article
- + Show details - Hide details
-
p.
662
–664
(3)
A universal second-order active filter network employing CCII-type current conveyors is reported. The circuit offers wide bandwidth, high input impedance and independent control of ω0, Q and voltage gain with separate grounded resistors. The circuit also uses grounded capacitors and is therefore ideal for integration.
Adaptive echo canceller employing DM encoding
- Author(s): C.C. Evci
- Source: Electronics Letters, Volume 22, Issue 12, p. 664 –665
- DOI: 10.1049/el:19860454
- Type: Article
- + Show details - Hide details
-
p.
664
–665
(2)
The letter presents an echo canceller employing both delta modulation (DM) and a least-mean-square (LMS) adaptive filter. An adaptive filter operating on a DM binary output sequence attempts to model the echo path. This tandem connection can significantly reduce the hardware complexity. The proposed scheme appears to have considerable potential in telecommunications as the results are comparable to those obtained from the classical echo canceller with PCM.
Zero-insertion-loss random-access fibre-optic data ring based on the Faraday effect
- Author(s): M. Berwick ; P.A. Leilabady ; J.D.C. Jones ; D.A. Jackson
- Source: Electronics Letters, Volume 22, Issue 12, p. 665 –667
- DOI: 10.1049/el:19860455
- Type: Article
- + Show details - Hide details
-
p.
665
–667
(3)
A novel form of fibre-optic data ring based on a reciprocal path Sagnac interferometer is demonstrated, which utilises the Faraday effect to encode the guided light beam at arbitrarily chosen locations and has reduced environmental sensitivity.
New CMOS floating voltage-controlled resistor
- Author(s): K. Nagaraj
- Source: Electronics Letters, Volume 22, Issue 12, p. 667 –668
- DOI: 10.1049/el:19860456
- Type: Article
- + Show details - Hide details
-
p.
667
–668
(2)
A new CMOS floating voltage-controlled resistor for continuous-time filtering applications is described. The value of the resistance simulated by this circuit is independent of the threshold voltage of the transistors. This allows us to obtain a larger input range and also minimises the effects of threshold voltage mismatches and substrate noise. These improvements are obtained at the expense of a higher sensitivity to mismatches in the W/L ratios of the transistors.
New AC thin-film electroluminescent device with frequency-controlled brightness characteristics
- Author(s): S.M. Pillai and C.P.G. Vallabhan
- Source: Electronics Letters, Volume 22, Issue 12, p. 668 –669
- DOI: 10.1049/el:19860457
- Type: Article
- + Show details - Hide details
-
p.
668
–669
(2)
A novel thin-film electroluminescent device having a brightness/voltage characteristic depending strongly on the frequency of the excitation voltage is described. It is essentially a ZnS:Mn thin-film EL device of double-insulating-layer structure with a new dielectric layer of frequency-dependent impedance characteristic as the insulator.
Tunable 8-channel wavelength demultiplexer using an acousto-optic light deflector
- Author(s): T. Kinoshita ; K. Sano ; E. Yoneda
- Source: Electronics Letters, Volume 22, Issue 12, p. 669 –670
- DOI: 10.1049/el:19860458
- Type: Article
- + Show details - Hide details
-
p.
669
–670
(2)
Experimental results of a tunable 8-channel wavelength demultiplexer are described. An acousto-optic light deflector is used to control the demultiplexer wavelength characteristics externally. An insertion loss of 9.5 dB, a crosstalk attenuation of 21 dB and a tuning range of 3.3 nm were obtained.
Influence of nonlinear dispersion in coherent narrowband amplification by stimulated Brillouin scattering
- Author(s): D. Cotter ; D.W. Smith ; C.G. Atkins ; R. Wyatt
- Source: Electronics Letters, Volume 22, Issue 12, p. 671 –672
- DOI: 10.1049/el:19860459
- Type: Article
- + Show details - Hide details
-
p.
671
–672
(2)
The nonlinear dispersion associated with narrowband amplification by stimulated Brillouin scattering in optical fibre can be utilised in coherent self-homodyne detection.
High-speed ring oscillators using planar p+-gate n-AlGaAs/GaAs 2DEG FETs
- Author(s): Y. Suzuki ; H. Hida ; H. Toyoshima ; K. Ohata
- Source: Electronics Letters, Volume 22, Issue 12, p. 672 –674
- DOI: 10.1049/el:19860460
- Type: Article
- + Show details - Hide details
-
p.
672
–674
(3)
An E/R DCFL ring oscillator has been fabricated using a planar n-AlGaAs/GaAs 2DEG enhancement FET with p+-gate structure. For 1 μm gate length E-FETs, the standard deviation of threshold voltage was as small as 17.6 mV at 0.016 V average threshold voltage. At room temperature, a gate propagation delay of 15 ps/gate at a 5.25 mW/gate power dissipation was obtained from a 25-stage ring oscillator. A small minimum power-delay product of 14 fJ/gate was attained at 0.65 V supply voltage.
Testing lithium niobate boules for integrated optics applications
- Author(s): G.E. Peterson and S.R. Lunt
- Source: Electronics Letters, Volume 22, Issue 12, p. 674 –675
- DOI: 10.1049/el:19860461
- Type: Article
- + Show details - Hide details
-
p.
674
–675
(2)
To ensure the quality and repeatability of electro-optic devices, it is necessary to be able to characterise the material before processing. We propose two methods of characterisation: a prism-coupling experiment and the use of second harmonics. These two methods can be used together to obtain very sensitive measurements of the optical homogeneity of LiNbO3 boules and substrates.
Crosstalk due to three-wave mixing process in a coherent single-mode transmission line
- Author(s): N. Shibata ; R.P. Braun ; R.P. Waarts
- Source: Electronics Letters, Volume 22, Issue 12, p. 675 –677
- DOI: 10.1049/el:19860462
- Type: Article
- + Show details - Hide details
-
p.
675
–677
(3)
Three-wave mixing has been observed in a coherent multichannel transmission system (3.5 km fibre length, λ=830 nm). The measured generated power was up to 370 pW for input powers of hundreds of microwatts. The efficiency of generated waves decreases with carrier frequency separation in good agreement with the theoretical prediction (−20 dB at 50 GHz).
Gigahertz voltage-controlled ring oscillator
- Author(s): K.E. Syed and A.A. Abidi
- Source: Electronics Letters, Volume 22, Issue 12, p. 677 –679
- DOI: 10.1049/el:19860463
- Type: Article
- + Show details - Hide details
-
p.
677
–679
(3)
Designs for ring oscillators that provide a 2:1 range of voltage-controllable frequency are compared. Simulated results are given for a ring oscillator intended for a 1 μm NMOS monolithic IC implementation. The circuit displays a variable frequency from 1.5 GHz to 2.5 GHz, and requires no off-chip tuning elements.
Mode selectivity in DFB lasers with a second-order grating
- Author(s): J. Glinski and T. Makino
- Source: Electronics Letters, Volume 22, Issue 12, p. 679 –680
- DOI: 10.1049/el:19860464
- Type: Article
- + Show details - Hide details
-
p.
679
–680
(2)
The relative effectiveness of three methods of achieving dynamic single-mode operation of second-order distributed feedback lasers is analysed. These methods, based on phase shifting, mirror asymmetry and radiation loss are compared under conditions of random cleaving of facets.
Demonstration of a narrowband Bragg-reflection filter in a single-mode fibre directional coupler
- Author(s): M.S. Whalen ; M.D. Divino ; R.C. Alferness
- Source: Electronics Letters, Volume 22, Issue 12, p. 681 –682
- DOI: 10.1049/el:19860465
- Type: Article
- + Show details - Hide details
-
p.
681
–682
(2)
A narrowband wavelength-selective optical fibre directional coupler has been fabricated by etching a diffraction grating directly into the cladding region of a single-mode fibre. This device exhibits efficient (25%) interfibre Bragg reflection with a 6 Å bandwidth at 1.52 μm.
Erratum: Avalanche GaAlAs/GaAs heterojunction phototransistor with optoelectronic bistability
- Author(s): Huang Xiaokang ; Wang Zuning ; Sun Baoyin
- Source: Electronics Letters, Volume 22, Issue 12, page: 682 –682
- DOI: 10.1049/el:19860466
- Type: Article
- + Show details - Hide details
-
p.
682
(1)
Erratum: Improved sequential linear prediction by selective time-domain coefficient extraction
- Author(s): G.J. Freij and B.M.G. Cheetham
- Source: Electronics Letters, Volume 22, Issue 12, page: 682 –682
- DOI: 10.1049/el:19860467
- Type: Article
- + Show details - Hide details
-
p.
682
(1)
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article