Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 22, Issue 10, 8 May 1986
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Volume 22, Issue 10
8 May 1986
Crosspolarisation from plane and hyperbolic offset frequency-selective reflectors
- Author(s): T.S. Mok and E.A. Parker
- Source: Electronics Letters, Volume 22, Issue 10, p. 505 –506
- DOI: 10.1049/el:19860344
- Type: Article
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Difference contours compare the crosspolar patterns of a metallic surface and an array of concentric rings used as the frequency-selective component in a flat plate diplexer and a hyperbolic offset subreflector.
Improved molecular beam epitaxial growth of InP using solid sources
- Author(s): J.S. Roberts ; P.A. Claxton ; J.P.R. David ; J.H. Marsh
- Source: Electronics Letters, Volume 22, Issue 10, p. 506 –507
- DOI: 10.1049/el:19860345
- Type: Article
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Molecular beam epitaxy (MBE) has been used to grow high-purity InP layers using solid sources and a graphite cracking zone to generate P2. Close control of slice temperature was achieved by mounting the substrate on a 3 in (75.6 mm) silicon wafer with indium solder. In addition, two differently packed phosphorus sources were investigated to assess the effect of oxides/water on InP purity. Several InP layers with a 77 K mobility of ∼50000 cm2V−1s−1 were grown using a phosphorus source vacuum-packed at manufacture.
Single-mode 1.3 μm optical fibre link for analogue multichannel television
- Author(s): T.T. Tjhung ; B. Selvan ; M.K. Haldar ; F.V.C. Mendis
- Source: Electronics Letters, Volume 22, Issue 10, p. 507 –509
- DOI: 10.1049/el:19860346
- Type: Article
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An analogue optical link for multichannel video is described, using a 1.3 μm multimode laser diode and single-mode fibre. High-quality transmission is achieved by optimising the frequency deviation and interchannel spacing, in the FM/FDM format employed.
Operation of a high-frequency photodiode-HEMT hybrid photoreceiver at 10 GHz
- Author(s): W.A. Hughes and D.G. Parker
- Source: Electronics Letters, Volume 22, Issue 10, p. 509 –510
- DOI: 10.1049/el:19860347
- Type: Article
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A hybrid photoreceiver based on an ITO/GaAs photodiode integrated with a 0.5 μm gate length high electron mobility transistor (HEMT) is reported. The receiver gave an 8 dB associated gain at 10 GHz compared with a discrete detector.
First successful fabrication of high-performance all-refractory-metal (Ta-Au) GaAs FET using very highly doped N+-layers and nonalloyed ohmic contacts
- Author(s): J.A. Calviello ; P.R. Bie ; G. Hickman ; P. Pomian ; A. Cappello ; W. Costello
- Source: Electronics Letters, Volume 22, Issue 10, p. 510 –512
- DOI: 10.1049/el:19860348
- Type: Article
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An all-refractory-metal GaAs MESFET (ARFET) making use of a Ta Schottky barrier with a thick gold overlayer for the source, gate and drain, and very highly doped N+-layers (2x1019 cm-3) to achieve low-resistivity nonalloyed ohmic contacts, has been successfully fabricated. These have a 400 μm gate periphery and 0.6 μm gate length and measured an associated gain of 10.22 dB and a noise figure of 2.14 dB at 8 GHz. The ARFETs were fabricated on epitaxial layers grown by MBE. Only one mask was used to simultaneously define source, gate and drain regions via a plasma dry-etch technique.
Evaluation of current density distribution in MESFET gates
- Author(s): A. Scorzoni ; C. Canali ; F. Fantini ; E. Zanoni
- Source: Electronics Letters, Volume 22, Issue 10, p. 512 –514
- DOI: 10.1049/el:19860349
- Type: Article
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An analytical evaluation of the distribution of the current density both along the gate finger and perpendicular to the metal/semiconductor interface in MESFET transistors is reported for the case of forward-biased gate junctions. Examples are given for two gate resistances per unit length to evidence the current crowding effect which appears near the gate pad on increasing the gate resistance.
Evaluating the impulse response of a first-order 2-D recursive filter
- Author(s): D.C. McLernon and R.A. King
- Source: Electronics Letters, Volume 22, Issue 10, p. 514 –515
- DOI: 10.1049/el:19860350
- Type: Article
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New recursive and nonrecursive methods to evaluate the impulse response h(m, n) of a first-order 2-D filter are derived. New bounds for |h(m, n)| and ∑∞m=0 ∑∞n=0 |h(m, n)| are also presented, with the latter bound finding applicability in evaluating the error due to internal product quantisation.
Circular birefringence in helical-core fibre
- Author(s): J. Qian and C.D. Hussey
- Source: Electronics Letters, Volume 22, Issue 10, p. 515 –517
- DOI: 10.1049/el:19860351
- Type: Article
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Circular birefringence in an isotropic helical fibre is studied using coupled-mode analysis. The formulas derived here can be used to explain the existing paradox in calculating circular birefringence.
Bidirectional fibre-optic link using reflective modulation
- Author(s): P.J. Duthie ; M.J. Wale ; I. Bennion ; J. Hankey
- Source: Electronics Letters, Volume 22, Issue 10, p. 517 –518
- DOI: 10.1049/el:19860352
- Type: Article
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A new technique for simultaneous bidirectional data transmission on a single monomode fibre is described. The link is implemented by employing a single light source at one end of the fibre and a reflective modulator at the other. Simultaneous transmission of 565 Mbit/s and 34 Mbit/s signals is reported with BER < 10-9 in each case.
Visible-region optical absorption property for germanium-doped silica optical fibres induced by UV light propagation
- Author(s): K. Noguchi ; N. Uesugi ; K. Suzuki
- Source: Electronics Letters, Volume 22, Issue 10, p. 519 –520
- DOI: 10.1049/el:19860353
- Type: Article
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Visible-region absorption and fluorescence are first observed for GeO2-doped silica optical fibres propagated by UV light in the 350–370 nm region. An absorption band at 1.97 eV and fluorescence at 1.91 eV are observed in the UV-propagated fibre. The absorption and fluorescence are considered to be caused by creation of the oxygen-hole centre.
Cascadable low-power gain-stabilised limiting amplifier stage
- Author(s): E.H. Nordholt and H.C. Nauta
- Source: Electronics Letters, Volume 22, Issue 10, p. 520 –521
- DOI: 10.1049/el:19860354
- Type: Article
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A directly cascadable low-power high-gain symmetrically limiting amplifier stage is presented. A novel technique for gain stabilisation uses a PTAT current source as an essential and inherent part of the common-mode bias feedback loop.
Floating-impedance realisation using a dual operational-mirrored amplifier
- Author(s): G. Normand
- Source: Electronics Letters, Volume 22, Issue 10, p. 521 –522
- DOI: 10.1049/el:19860355
- Type: Article
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–522
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A new realisation for the synthesis of floating impedances—inductor or FDNR/FDNC—is described. The circuit only needs a dual operational amplifier whose power lines are set in the supply-current sensing technique.
Effect of mismatch on antenna gain measurement by Purcell's method
- Author(s): Z. Wu
- Source: Electronics Letters, Volume 22, Issue 10, p. 522 –524
- DOI: 10.1049/el:19860356
- Type: Article
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–524
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The measurement of the power gain of an antenna by Purcell's method demands that the antenna be matched to its waveguide feed with a VSWR of typically 1.01. The letter shows how, using an extension of this method, the measurement may be carried out without this restriction.
Metallic E-plane filter with cavities of different cutoff frequency
- Author(s): J. Bornemann and F. Arndt
- Source: Electronics Letters, Volume 22, Issue 10, p. 524 –525
- DOI: 10.1049/el:19860357
- Type: Article
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–525
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A planar integrated circuit filter with multiple all-metal inserts and multiple abrupt waveguide step-wall discontinuities is introduced which achieves broadband high attenuation in the second stopband. The design is based on field expansion into suitably normalised eigenmodes which yield directly the modal S-matrix. This theory allows the immediate inclusion of both the higher-order mode interaction at all discontinuities and the finite thickness of the inserts. Computer-optimised design data for a five-resonator Ka-band prototype filter at 27 GHz midband frequency provide a minimum stopband attenuation of 50 dB between 27.5 and 44.5 GHz.
Magnetoelastic amorphous metal fluxgate magnetometer
- Author(s): M.D. Mermelstein
- Source: Electronics Letters, Volume 22, Issue 10, p. 525 –526
- DOI: 10.1049/el:19860358
- Type: Article
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A fluxgate magnetometer is presented which exploits the magnetic field dependence to the stress-driven magnetisation fluctuations in magnetostrictive metallic glass ribbons. A magnetometer constructed with an unannealed ribbon, a piezoelectric ceramic driving element and a 100-turn pick-up coil exhibits a minimum detectable magnetic field of 15 nT/√Hz in the DC to 1 Hz bandwidth.
Low-threshold inGaAsP ridge-waveguide laser fabricated by a new contacting system
- Author(s): G. Müller ; E. Hartl ; M. Honsberg
- Source: Electronics Letters, Volume 22, Issue 10, p. 526 –528
- DOI: 10.1049/el:19860359
- Type: Article
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A new type of index-guided laser, the bridge-contacted ridge-waveguide (BCRW) laser, is reported. Without the use of any sophisticated fabrication processes, CW threshold currents of 28 mA and quantum efficiencies of 60% are obtained for 3 μm-wide and 200 μm-long devices. In the last processing step the lateral index-guiding properties of this structure can be adjusted within a wide range. It is demonstrated that strong passive waveguiding results in both monomode emission and a narrow single-lobed far-field pattern, even for high injection currents.
Bidirectional fibre-optical transmission using a multiple-quantum-well (MQW) modulator/detector
- Author(s): T.H. Wood ; E.C. Carr ; B.L. Kasper ; R.A. Linke ; C.A. Burrus ; K.L. Walker
- Source: Electronics Letters, Volume 22, Issue 10, p. 528 –529
- DOI: 10.1049/el:19860360
- Type: Article
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We demonstrate a simple architecture for bidirectional optical fibre transmission which uses an MQW device as both modulator and photodetector. We achieved transmission of 50 Mbit/s and 600 Mbit/s in both directions over one 3.34 km-long single-mode fibre at 860 nm wavelength. Coherent Rayleigh interference was found to be a limiting factor in single-source bidirectional systems.
Crosspolar cancellation for partial frequency reuse Earth stations
- Author(s): A. Ghorbani ; N.J. McEwan ; J.P.V. Poiares Baptista
- Source: Electronics Letters, Volume 22, Issue 10, p. 529 –531
- DOI: 10.1049/el:19860361
- Type: Article
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In a dual-polarised frequency reuse satellite system, an earth station may only be required to demodulate one of the two incident polarisations, or to transmit a single polarisation. In such cases rain crosspolarisation can be substantially reduced by a lossless network with one variable parameter.
Balanced systems and model reduction
- Author(s): A.M. Davidson
- Source: Electronics Letters, Volume 22, Issue 10, p. 531 –532
- DOI: 10.1049/el:19860362
- Type: Article
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Moore's method of reduction of linear systems by transformation to balanced form and subsequent truncation can fail to retain the most significant states in the reduced model. An alternative criterion is suggested for the selection of states in terms of their input/output contribution.
Compensator for static nonlinearities—design and application
- Author(s): D. Juričić ; S. Strmčnik ; J. Petrovčič
- Source: Electronics Letters, Volume 22, Issue 10, p. 532 –534
- DOI: 10.1049/el:19860363
- Type: Article
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–534
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A simple design procedure for the nonlinear compensator which linearises the nonlinear part in Hammerstein processes on the basis of inversion of the static characteristic is described. It leads to easier tuning of the dynamic controller and improved system transient behaviour. This is confirmed by its application to level control.
Bidirectional 2 Mbit/s transmission over a single fibre using electrical echo cancellation
- Author(s): P. Staubli and P. Heinzmann
- Source: Electronics Letters, Volume 22, Issue 10, p. 534 –535
- DOI: 10.1049/el:19860364
- Type: Article
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Bidirectional transmission over a single fibre using directional couplers and analogue echo cancellation is demonstrated. The implemented echo canceller suppresses crosstalk due to reflections from the local connector and coupler by 11 dB, i.e. it extends the transmission distance by up to 10 km (at 1.3 μm).
New simple one-end splice loss measurement method using an OTDR for single-mode optical fibre
- Author(s): S.-I. Furukawa and Y. Koyamada
- Source: Electronics Letters, Volume 22, Issue 10, p. 535 –537
- DOI: 10.1049/el:19860365
- Type: Article
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The letter presents a new simple method using an optical time-domain reflectometer for measuring the real splice loss of single-mode optical fibres from one end of the fibre. Importantly, the method eliminates the difference in backscattering properties of the spliced fibres by subtracting two discontinuities obtained at different wavelengths in the received backscattered power.
Electron mobility within 100 nm of the Si/sapphire interface in double-solid-phase epitaxially regrown SOS
- Author(s): G.A. Garcia and R.E. Reedy
- Source: Electronics Letters, Volume 22, Issue 10, p. 537 –538
- DOI: 10.1049/el:19860366
- Type: Article
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Field-effect electron mobility within 100 nm of the sapphire substrate in double-solid-phase epitaxially regrown silicon on sapphire has been measured. Electron mobility in the range of 500 cm2/Vs has been observed in this near-interfacial region, consistent with previously reported reductions in the crystal defect concentration.
Natural linewidth of semiconductor lasers
- Author(s): J. Arnaud
- Source: Electronics Letters, Volume 22, Issue 10, p. 538 –540
- DOI: 10.1049/el:19860367
- Type: Article
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A formula is given for the natural linewidth of high-gain lasers, which is applicable to arbitrary three-dimensional geometries. This formula agrees with Petermann's result for lasers with transversely inhomogeneous gains (K-factor) and with previous results for the effect of small mirror reflectivities. It does not agree with the Schawlow-Townes (ST) formula used by most authors in evaluating the α=Δnr/Δni factor of conventional semiconductor lasers. The difference between the two formulas is significant when the mirror power reflectivity is less than about 0.6. Furthermore, the modified formula gives directly the linewidth of lasers coupled to long external cavities. Saturation effects, however, are neglected in this letter.
Use of unidirectional data flow in bit-level systolic array chips
- Author(s): J.V. McCanny ; R.A. Evans ; J.G. McWhirter
- Source: Electronics Letters, Volume 22, Issue 10, p. 540 –541
- DOI: 10.1049/el:19860368
- Type: Article
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We show how the architecture of two recently reported bit-level systolic array circuits—a single-bit coefficient correlator and a multibit convolver—may be modified to incorporate unidirectional data flow. This feature has some important advantages in terms of chip cascadability, fault tolerance and possible wafer-scale integration.
Assessment of switching speed of optical bistability in semiconductor laser amplifiers
- Author(s): H.J. Westlake ; M.J. Adams ; M.J. O'Mahony
- Source: Electronics Letters, Volume 22, Issue 10, p. 541 –543
- DOI: 10.1049/el:19860369
- Type: Article
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Measured hysteresis characteristics are presented for a bistable Fabry-Perot laser amplifier operating at high switching rates. The results show that optical bistability ceases to be evident at a repetition frequency of around 250 MHz, corresponding to a data rate of 500 Mbit/s, which indicates switching times commensurate with the carrier recombination time.
3.8 Gbit/s bipolar master/slave D-flip-flop IC as a basic element for high-speed optical communication systems
- Author(s): H.-M. Rein and R. Reimann
- Source: Electronics Letters, Volume 22, Issue 10, p. 543 –544
- DOI: 10.1049/el:19860370
- Type: Article
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A high-speed bipolar master/slave D-flip-flop IC for many applications in future optical communication systems is presented. The circuit can be used up to 3.8 Gbit/s at 5 V supply voltage. It was fabricated in a silicon planar technology similar to today's production technologies with standard 2 μm design rules, but without needing polysilicon emitter and super self-aligned processes.
Efficiency of III-V compound electro-optic phase modulators
- Author(s): G. Lengyel
- Source: Electronics Letters, Volume 22, Issue 10, p. 544 –546
- DOI: 10.1049/el:19860371
- Type: Article
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The efficiency of electro-optic phase modulators built in the form of multilayer slab waveguides depends on the waveguide design. Analytical expressions have been developed for the effectiveness of such PIN and metal-IN phase-modulator waveguides as functions of design parameters.
All-fibre gyroscope using depolarised superluminescent diode
- Author(s): S. Tai ; K. Kojima ; S. Noda ; K. Kyuma ; K. Hamanaka ; T. Nakayama
- Source: Electronics Letters, Volume 22, Issue 10, p. 546 –547
- DOI: 10.1049/el:19860372
- Type: Article
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An all-fibre gyroscope using a depolarised superluminescent diode which has a coherence length of 8 μm and a degree of polarisation of 0.03 is constructed. Although the configuration is very simple and the fibre length is as short as 200 m, the drift and detection limits are less than 14 deg/h and 1.5 deg/h, respectively.
Sidewall slotted waveguide array antenna with low crosspolar radiation
- Author(s): A.J. Sangster
- Source: Electronics Letters, Volume 22, Issue 10, p. 547 –548
- DOI: 10.1049/el:19860373
- Type: Article
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A new sidewall waveguide slot radiator is described which produces negligible crosspolar radiation fields. This is achieved by employing a noninclined slot inserted into the sidewall of a bifurcated waveguide feed system. The edge slot is excited parasitically by an axially directed septum slot.
Incoherent imaging of radar targets
- Author(s): A. van Ommen and G.A. van der Spek
- Source: Electronics Letters, Volume 22, Issue 10, p. 548 –550
- DOI: 10.1049/el:19860374
- Type: Article
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If a target can be modelled as a rigid constellation of point scatters, the RCS pattern over a certain aspect change can be used to produce a one-dimensional image. Experimental results, however, are not promising.
Switched reflection phase shifter
- Author(s): M.H. Kori and S. Mahapatra
- Source: Electronics Letters, Volume 22, Issue 10, p. 550 –551
- DOI: 10.1049/el:19860375
- Type: Article
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A new type of PIN diode phase shifter is described in which two phase-shifting parts can be incorporated into one, by combining the properties of reflection and switched lines. This results in reducing the circuit dimensions, conductor length and line losses. Theoretical analysis, advantages and limitations of two possible combinations are presented.
Self-consistent multilongitudinal-mode model for cleaved-coupled-cavity semiconductor lasers
- Author(s): J.P. van de Capelle ; R. Baets ; P.E. Lagasse
- Source: Electronics Letters, Volume 22, Issue 10, p. 551 –553
- DOI: 10.1049/el:19860376
- Type: Article
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A longitudinal, self-consistent, static model for coupled-cavity semiconductor lasers has been developed. The method includes several longitudinal modes simultaneously and is capable of calculating the operating characteristics for both near- and far-above-threshold regimes. The model allows for the investigation of mode-selection mechanisms, tunability, bistability etc., as a function of various parameters.
Wideband frequency scanning of a stabilised semiconductor laser
- Author(s): H. Tsuchida ; Y. Mitsuhashi ; M. Sugimura
- Source: Electronics Letters, Volume 22, Issue 10, p. 553 –554
- DOI: 10.1049/el:19860377
- Type: Article
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A method for widely scanning the frequency of a stabilised semiconductor laser is described. This method utilises the temperature dependence of the resonant frequency of a Fabry-Perot interferometer which is used as a frequency reference. A continuous scanning range of 37 GHz is obtained.
Aperture-coupling of a rectangular microstrip resonator
- Author(s): G. Gronau and I. Wolff
- Source: Electronics Letters, Volume 22, Issue 10, p. 554 –556
- DOI: 10.1049/el:19860378
- Type: Article
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A theory and experimental results for the aperture coupling of rectangular microstrip resonators are presented. The resonator is coupled by a resonant slot in the ground plane to a microstrip feed line.
Application of Brillouin amplification in coherent optical transmission
- Author(s): C.G. Atkins ; D. Cotter ; D.W. Smith ; R. Wyatt
- Source: Electronics Letters, Volume 22, Issue 10, p. 556 –558
- DOI: 10.1049/el:19860379
- Type: Article
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A novel homodyne detection technique which avoids optoelectronic phase-locking by using stimulated Brillouin gain to selectively amplify the signal carrier is described.
Secure data optical fibre multiple-access communication technique
- Author(s): P. Healey
- Source: Electronics Letters, Volume 22, Issue 10, page: 558 –558
- DOI: 10.1049/el:19860380
- Type: Article
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The letter describes a novel secure data optical fibre multiple-access communication technique based on the special properties of new transmissive star couplers.
Radiation-hardened n-channel MOSFET achieved by a combination of polysilicon sidewall and SIMOX technology
- Author(s): T. Ohno ; K. Izumi ; M. Shimaya ; N. Shiono
- Source: Electronics Letters, Volume 22, Issue 10, p. 559 –560
- DOI: 10.1049/el:19860381
- Type: Article
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A radiation-hardened n-channel MOSFET has been developed by a combination of a polysilicon sidewall and SIMOX technology. The MOSFET is laterally isolated by multilayers of sidewall SiO2, sidewall polysilicon and field SiO2, It is vertically isolated by multilayers of highly oxygen-doped polysilicon and buried oxide. By using this isolation structure and a thin gate oxide, an increase in leakage currents and a threshold voltage shift were suppressed to less than 1.5 orders of magnitude and 0.08 V, respectively, after 106 rad(Si) irradiation.
Zero-order supermode discrimination in semiconductor laser arrays
- Author(s): J.E.A. Whiteaway
- Source: Electronics Letters, Volume 22, Issue 10, p. 560 –562
- DOI: 10.1049/el:19860382
- Type: Article
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Uniform laser arrays naturally tend to oscillate in the highest-order supermode unless preventive steps are taken. It is shown that arrays can be designed to cut off the highest-order supermode, hence removing all possibility of its propagation.
High-power 60 GHz monolithic GaAs impatt diodes
- Author(s): B. Bayraktaroglu and H.D. Shih
- Source: Electronics Letters, Volume 22, Issue 10, p. 562 –563
- DOI: 10.1049/el:19860383
- Type: Article
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Monolithic GaAs impatt diodes were developed as CW power sources at 60 GHz using double-drift flat-profile structures prepared by MBE. Two mesa-type diodes were employed to excite a microstrip resonator produced on the same chip as the diodes. The oscillation frequency was determined by the microstrip dimensions and the diode locations rather than by external circuitry 1.2 W was obtained at 60 GHz with 8.5% efficiency, and a maximum efficiency of 10% was obtained at 58.5 GHz with 1.1 W output power without the use of diamond heat sinks.
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54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article