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1350-911X
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0013-5194
Electronics Letters
Volume 21, Issue 4, 14 February 1985
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Volume 21, Issue 4
14 February 1985
Low-noise HEMT fabricated by MOCVD
- Author(s): H. Takakuwa ; Y. Kato ; S. Watanabe ; Y. Mori
- Source: Electronics Letters, Volume 21, Issue 4, p. 125 –126
- DOI: 10.1049/el:19850088
- Type: Article
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–126
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Low-noise HEMTs with GaAlAs/GaAs heterostructures have been successfully fabricated using metal organic chemical vapour deposition (MOCVD). Hall mobilities of the two-dimensional electron gas at the interface are 8000 and 148 000 cm2/Vs at 300 and 77 K. These are comparable to the best results yet reported using molecular beam epitaxy (MBE). The HEMTs fabricated by MOCVD with a 0.8 μm-long gate have exhibited a noise figure of 1.47 dB with 9 dB associated gain at 12 GHz and transconductance of 190 mS/mm.
Picosecond semiconductor laser radar with optical amplifier
- Author(s): A. Alping ; P. Andersson ; S.T. Eng
- Source: Electronics Letters, Volume 21, Issue 4, p. 126 –127
- DOI: 10.1049/el:19850089
- Type: Article
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–127
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An optical range finder, which uses the same semiconductor laser as both an optical pulse source and an optical preamplifier of the reflected pulse, is reported. This method has the advantage of reducing the number of optical components that must be aligned, which makes it suitable as a picosecond laser radar in aerospace applications. The device showed a maximum optical gain of 17 dB with a dynamic range of 33 dB, and the obtained resolution was of the order of 1 mm.
Standard instrument configuration for parametric testing
- Author(s): A.J. Walton ; J.M. Robertson ; R. Holwill ; M.B. Moore
- Source: Electronics Letters, Volume 21, Issue 4, p. 127 –128
- DOI: 10.1049/el:19850090
- Type: Article
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–128
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A standard configuration for parametric test structures is proposed which can then be measured using instrumentation which is hardwired to the probes. The appropriate connections are made on-chip, which significantly reduces the complexity and expense of the measurement system.
Single PIN diode X-band phase shifter
- Author(s): C.E. Free and C.S. Aitchison
- Source: Electronics Letters, Volume 21, Issue 4, p. 128 –129
- DOI: 10.1049/el:19850091
- Type: Article
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–129
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A new design of microstrip phase shifter is described which uses only one PIN diode per bit of phase shift. Results are presented for a representative device which show good agreement between experimental and theoretical results at X-band. In particular, the device has been shown to yield a useful 20% bandwidth centred on 10 GHz.
Dynamic line broadening of semiconductor lasers modulated at high frequencies
- Author(s): J. Buus
- Source: Electronics Letters, Volume 21, Issue 4, p. 129 –131
- DOI: 10.1049/el:19850092
- Type: Article
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–131
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Directly modulated semiconductor lasers show a pronounced linewidth broadening. A general and simple expression for this broadening is derived and the consequences for optical communication systems are discussed.
Effects of growth temperature and [PH3]/[In(C2H5)3] on purity of epitaxial InP grown by metalorganic chemical vapour deposition
- Author(s): K. Uwai ; O. Mikami ; N. Susa
- Source: Electronics Letters, Volume 21, Issue 4, p. 131 –132
- DOI: 10.1049/el:19850093
- Type: Article
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High-purity undoped InP epitaxial layers (ND − NA = 5 × 1014 cm−3, μ77≥105 cm2/Vs) are grown by low-pressure metalorganic chemical vapour deposition. The carrier concentrations decrease and the electron mobilities increase as the growth temperature decreases from 700°C to 575°C and the mole fraction ratios ([PH3]/[In(C2H5)3]) increase from 29 to 290.
Cancellation of distortion of any order in integrated active RC filters
- Author(s): Y. Tsividis and Bingxue Shi
- Source: Electronics Letters, Volume 21, Issue 4, p. 132 –134
- DOI: 10.1049/el:19850094
- Type: Article
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–134
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Recently proposed continuous-time integrated filters are considered, consisting of capacitors, MOS transistors and active elements. It is shown that for some topologies and certain frequency ranges, cancellations can occur for both even- and odd-order nonlinearities, independently of the details of the transistor characteristics.
Single-mode optical-fibre ribbon cable
- Author(s): Y. Katsuyama ; S. Hatano ; K. Hogari ; T. Matsumoto ; T. Kokubun
- Source: Electronics Letters, Volume 21, Issue 4, p. 134 –135
- DOI: 10.1049/el:19850095
- Type: Article
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–135
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A single-mode optical-fibre ribbon cable was manufactured and investigated. An average cable loss of 0.45 dB/km and average fusion mass-splice loss of 0.35 dB have been achieved at a wavelength of 1.3 μm. These results indicate that single-mode-fibre ribbon can be applicable to large fibre count transmission.
Semiconductor-platelet fibre-optic temperature sensor
- Author(s): M.M. Salour ; G. Schoner ; M. Kull ; J.H. Bechtel
- Source: Electronics Letters, Volume 21, Issue 4, p. 135 –136
- DOI: 10.1049/el:19850096
- Type: Article
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–136
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We report a novel transmission fibre-optic temperature sensor consisting of a semiconductor platelet sandwiched between two parallel fibre ends. A new configuration eliminates the influence of the fibre absorption and the coupling factor of the fibre coupler on the measurement result.
Digital lattice filters with reduced number of tap-multipliers
- Author(s): E. Watanabe and A. Nishihara
- Source: Electronics Letters, Volume 21, Issue 4, p. 137 –138
- DOI: 10.1049/el:19850097
- Type: Article
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–138
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A synthesis of digital lattice filters with reduced number of tap multipliers is proposed. The resultant structures have about half as many tap-multipliers as Gray-Markel structures. This reduction is applicable when the numerator of a given transfer function is either a mirror image polynomial or an antimirror image polynomial.
Method of simplified analysis of switched-capacitor networks
- Author(s): J.J. Mulawka and G.S. Moschytz
- Source: Electronics Letters, Volume 21, Issue 4, p. 138 –139
- DOI: 10.1049/el:19850098
- Type: Article
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–139
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A simple by-inspection method is described for the z-domain analysis of switched-capacitor networks. The approach is based on the nodal admittance matrix and a concept of basic elements for the switched capacitor.
Low dark current InGaAs PIN photodiodes grown by molecular beam epitaxy
- Author(s): P. Cinguino ; F. Genova ; C. Rigo ; A. Stano
- Source: Electronics Letters, Volume 21, Issue 4, p. 139 –140
- DOI: 10.1049/el:19850099
- Type: Article
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–140
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High-quality InGaAs PIN photodiodes have been made from high-purity layers grown on InP substrate by molecular beam epitaxy. The diodes are top-illuminated mesa-type passivated and planarised by polyimide. The devices exhibit dark current densities as low as 2.3 × 10−5 A/cm2 at −10 V with a breakdown voltage of −80 V. These values are comparable with those obtained by other more conventional growth techniques, and are the best so far reported by MBE.
Probability density function of amplitude scintillations
- Author(s): G. Ortgies
- Source: Electronics Letters, Volume 21, Issue 4, p. 141 –142
- DOI: 10.1049/el:19850100
- Type: Article
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p.
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–142
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The letter reports on amplitude scintillation measurements of the orbital test satellite (OTS) BO carrier beacon carried out from June to December 1983. The scintillations are here characterised by standard deviations of the amplitude fluctuations and by the distribution of amplitude deviations from their mean. It is known that during scintillations log-amplitudes are normally distributed for short time intervals (1 min). The long-term probability density of amplitude scintillations can be calculated using recorded 1 mm standard deviations σ. The probability density function of log ((σ−σN)/dB) can be well approximated by a Gaussian distribution, where σN is the 1 min standard deviation due to thermal noise alone.
Effect of crystal orientation on plasma-grown oxides of silicon
- Author(s): K.J. Barlow ; A. Kiermasz ; W. Eccleston
- Source: Electronics Letters, Volume 21, Issue 4, p. 142 –143
- DOI: 10.1049/el:19850101
- Type: Article
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p.
142
–143
(2)
The effects of silicon crystal orientation on the rate of growth and oxide charge of layers grown in a plasma of oxygen with and without chlorine in the gas stream are described. It is shown that plasma oxide growth rate in the initial linear region is orientation-independent and is not, therefore, surface-reaction-rate-limited as with thermal oxidation. Strong orientation effects are seen, however, in the oxide charge, the results being qualitatively similar to those associated with thermal oxidation. The (111) surface is found to have higher oxide charge levels than (100).
Diurnal and seasonal variations of OTS amplitude scintillations
- Author(s): G. Ortgies and F. Rücker
- Source: Electronics Letters, Volume 21, Issue 4, p. 143 –145
- DOI: 10.1049/el:19850102
- Type: Article
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–145
(3)
The letter reports on scintillation measurements of the orbital test satellite (OTS) BO carrier which were carried out from June to December 1983. The scintillations are characterised here by the variance of amplitude deviations from their mean. The diurnal distribution of variances exceeding a certain threshold in summer shows a strong maximum in the early afternoon and a less pronounced one around midnight. In winter these maxima are displaced by 5 and 8 h, respectively. The results on the seasonal variations indicate that stronger fluctuations occurred more frequently in summer than in winter.
Phase velocity compensation in three-line coupled microstrip structure by using stratified dielectric substrate
- Author(s): B.J. Janiczak
- Source: Electronics Letters, Volume 21, Issue 4, p. 145 –146
- DOI: 10.1049/el:19850103
- Type: Article
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p.
145
–146
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A three-line coupled microstrip structure containing stratified dielectric substrate is analysed by the spectral domain technique. It is shown that phase velocities of any two of the guided fundamental modes can be compensated independently by proper choice of substrate composition.
Lowpass to highpass transformation in vis switched-capacitor filters
- Author(s): F. Montecchi
- Source: Electronics Letters, Volume 21, Issue 4, p. 146 –148
- DOI: 10.1049/el:19850104
- Type: Article
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p.
146
–148
(3)
A z-transformation for the design of highpass switched-capacitor filters is considered, which refers to a properly designed lowpass filter. The possible switched-capacitor implementation uses the voltage inverter switch approach with fully differential SC recharging devices: therefore, a bilinear design is obtained which introduces one zero at ω = 0.
Combined michelson and polarimetric fibre-optic interferometric sensor
- Author(s): M. Corke ; J.D.C. Jones ; A.D. Kersey ; D.A. Jackson
- Source: Electronics Letters, Volume 21, Issue 4, p. 148 –149
- DOI: 10.1049/el:19850105
- Type: Article
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148
–149
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A fibre-optic interferometric sensor utilising a highly birefringent fibre sensing element has been configured such that both Michelson and polarimetric outputs are simultaneously available. This device therefore offers the high resolution of a Michelson interferometer in conjunction with the increased dynamic range of a polarimetric device. The results of preliminary experiments in which the system was used as a temperature sensor are presented.
Monolithic integrated 4:1 multiplexer and demultiplexer operating up to 4.8 Gbit/s
- Author(s): N. Yoshikai ; S. Kawanishi ; M. Suzuki ; S. Konaka
- Source: Electronics Letters, Volume 21, Issue 4, p. 149 –151
- DOI: 10.1049/el:19850106
- Type: Article
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–151
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The letter describes the high-speed performance of a 4:1 time-division MSI multiplexer and demultiplexer, which are fabricated using advanced super self-aligned process technology (SST). The maximum operation speed of the multiplexer is 5.02 GHz under 576 mW power dissipation. The system, which is composed of a multiplexer and a demultiplexer, operates at up to 4.80 GHz. The demultiplexer has a power dissipation of 1148 mW. Interchannel interference is also examined.
11 ps ring oscillators with submicrometre selectively doped heterostructure transistors
- Author(s): N.J. Shah ; S.S. Pei ; C.W. Tu ; R.H. Hendel ; R.C. Tiberio
- Source: Electronics Letters, Volume 21, Issue 4, p. 151 –152
- DOI: 10.1049/el:19850107
- Type: Article
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–152
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Selectively doped AlGaAs/GaAs heterostructure transistor (SDHT) ring oscillators with submicrometre gates have been fabricated using electron beam lithography. Minimum propagation delay of 11.0 ps/gate at 77 K was measured on a 0.4 μm gate-length ring oscillator with a power-delay product of 15 fJ at 1.1 V bias. The processing of these structures is described, as well as the testing of the submicrometre transistors and circuits at 300 K and 77 K.
New switched-capacitor ladder filters
- Author(s): H.G. Dimopoulos
- Source: Electronics Letters, Volume 21, Issue 4, p. 152 –154
- DOI: 10.1049/el:19850108
- Type: Article
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–154
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A method is described and implemented for the derivation of switched-capacitor discrete-time filters from analogue passive filters of the ladder doubly terminated kind. The method is based on linear transformation active (LTA) synthesis, and yields some very interesting results.
Enhanced performance of 2 μm N-MOSFETs in doubly recrystallised SOS films
- Author(s): R.L. Maddox and I. Golecki
- Source: Electronics Letters, Volume 21, Issue 4, p. 154 –155
- DOI: 10.1049/el:19850109
- Type: Article
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–155
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The field-effect channel electron mobility in 0.5 μm-thick silicon-on-sapphire films is increased by up to 22%, while the back-channel leakage current is decreased 100-fold, following a double recrystallisation by means of Si ion implantation/amorphisation and solid-phase epitaxy. The improved electrical performance correlates with a more than 100-fold reduction in the microtwin density, as measured by X-ray diffraction.
Low-loss polarisation-maintaining optical fibre with low crosstalk
- Author(s): Y. Sasaki ; T. Hosaka ; J. Noda
- Source: Electronics Letters, Volume 21, Issue 4, p. 156 –157
- DOI: 10.1049/el:19850110
- Type: Article
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–157
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A low-loss polarisation-maintaining optical fibre with low crosstalk is presented. The minimum transmission loss is 0.35 dB/km at 1.54 μm and crosstalk is −32 dB at 1.56 μm in a 1 km length. The relative refractive index difference between core and cladding is 0.3%, and the modal birefringence is 2.8 × 10−4.
S-parameter measurements with a single six-port
- Author(s): J.D. Hunter and P.I. Somlo
- Source: Electronics Letters, Volume 21, Issue 4, p. 157 –158
- DOI: 10.1049/el:19850111
- Type: Article
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–158
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A simple calibration method requiring one two-port standard is shown to extend the use of a calibrated six-port to the measurement of network S-parameters.
Novel switched-capacitor generalised integrator
- Author(s): A. Cichocki and R. Unbehauen
- Source: Electronics Letters, Volume 21, Issue 4, p. 158 –159
- DOI: 10.1049/el:19850112
- Type: Article
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–159
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A novel circuit arrangement is proposed for a generalised integrator using the switched-capacitor (SC) technique. This generalised integrator (which integrates with respect to a dependent variable) can easily be constructed in IC form using MOS technology. It possesses some attractive features, for instance simplicity and low cost. It can find applications in many analogue systems such as curve-fitting devices, adaptive filters, RMS convertors etc.
Field test measurement for 920 MHz transmitter diversity
- Author(s): S. Ogose
- Source: Electronics Letters, Volume 21, Issue 4, p. 159 –161
- DOI: 10.1049/el:19850113
- Type: Article
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–161
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Field test measurements on 920 MHz transmitter diversity have been undertaken in the Tokyo metropolitan area. The proposed transmitter diversity provides at least an 8 to 10 dB required receiver input level reduction effect for 10−3 BER under a multipath fading environment. It is confirmed that the transmitter diversity is an effective technique, not only at improving transmission quality, but also at constructing a multitransmitter ‘simulcast’ system.
High-speed optical-optical logic gate for optical computers
- Author(s): Y. Suzuki ; J. Shimada ; H. Yamashita
- Source: Electronics Letters, Volume 21, Issue 4, p. 161 –162
- DOI: 10.1049/el:19850114
- Type: Article
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–162
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A laser diode having a saturable absorber within its cavity is proposed as an optically triggered optical logic gate. A threshold characteristic, a small delay time, a short output pulse and a possibility of integration of the gate lasers are predicted by theoretical analysis.
Two-dimensional array of GaInAsP/InP surface-emitting lasers
- Author(s): S. Uchiyama and K. Iga
- Source: Electronics Letters, Volume 21, Issue 4, p. 162 –164
- DOI: 10.1049/el:19850115
- Type: Article
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We have improved the mirror quality of a GaInAsP/InP surface emitting laser with a ring electrode on a round mesa cap. The minimum threshold current has been reduced to 35 mA at 77 K, and the uniformity of the laser threshold has been improved. The first two-dimensional (2×2) laser array has been demonstrated.
InGaAsP/InP multiquantum-well structure grown by MOCVD
- Author(s): M. Morisaki ; M. Ogura ; N. Hase ; T. Kajiwara
- Source: Electronics Letters, Volume 21, Issue 4, p. 164 –165
- DOI: 10.1049/el:19850116
- Type: Article
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InGaAsP/InP multiquantum-well (MQW) structures have been successfully grown by low-pressure MOCVD. The abruptness of the As atom profile was measured to be 20 Å by SIMS analysis. Continuous operation of InGaAsP/InP lasers using MQW structure has been achieved at 80 K.
Anisotropy detection in hot-pressed silicon nitride by acoustic microscopy using the line-focus beam
- Author(s): K. Yamanaka ; J. Kushibiki ; N. Chubachi
- Source: Electronics Letters, Volume 21, Issue 4, p. 165 –167
- DOI: 10.1049/el:19850117
- Type: Article
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–167
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Anisotropy in velocity and attenuation of leaky surface-acoustic waves (leaky SAWs) on hot-pressed silicon nitride was measured by acoustic microscopy using the line-focus beam. On the surface normal to the pressing direction the velocity was 5651 m/s for all propagation directions, whereas on the surface parallel to the pressing direction the velocities varied markedly, depending on the wave propagation direction—typically 5726 m/s along the direction normal to the pressing axis and 5642 m/s along the direction parallel to the pressing axis. Because the fracture toughness KIC, measured by the Vickers indentation technique, also showed an anisotropy on the surface normal to the pressing direction, the anisotropic velocity measurement of the leaky SAWs proved to be useful in the NDE of anisotropic mechanical properties of ceramics products made by hot-pressing.
Stray-free switched-capacitor building block that realises delay, constant multiplier, or summer circuit
- Author(s): A.E. Said
- Source: Electronics Letters, Volume 21, Issue 4, p. 167 –168
- DOI: 10.1049/el:19850118
- Type: Article
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A switched-capacitor block is proposed. It uses single op-amp, two capacitors, and, through different feed-in branches, the block can be used as a delay, negative constant multiplier or a summer circuit. The proposed block is parasitic-free and requires a two-phase clock for its operation.
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