Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 21, Issue 3, 31 January 1985
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Volume 21, Issue 3
31 January 1985
Fabrication of widegap-emitter Schottky-collector transistor using GaInAs/InP
- Author(s): N. Emeis and H. Beneking
- Source: Electronics Letters, Volume 21, Issue 3, page: 85 –85
- DOI: 10.1049/el:19850058
- Type: Article
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A widegap-emitter transistor with a Schottky collector has been fabricated using n-InP as the emitter, p-GaInAs as the base layer and Ni as the Schottky metallisation. The fabricated transistors show a current gain better than 5 in the common-emitter configuration.
Use of FFT in microstrip capacitance calculations
- Author(s): J.R. Weale
- Source: Electronics Letters, Volume 21, Issue 3, page: 86 –86
- DOI: 10.1049/el:19850059
- Type: Article
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A method is described which can be used to calculate the capacitances of microstrip-like transmission lines on a dielectric substrate contained with a conducting box. The FFT is used once to sum a large number of series, and, by the judicious use of the resulting summations, the approximate capacitances of any strips on the dielectric substrate can be obtained after the solution of a set of simultaneous equations.
Digital transversal filter architecture
- Author(s): A.J. Greenberger
- Source: Electronics Letters, Volume 21, Issue 3, p. 86 –88
- DOI: 10.1049/el:19850060
- Type: Article
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A fast and efficient architecture is described for the realisation of a pipelined, fully parallel digital transversal filter in VLSI. The order of summation is changed such that no explicit multiplication is seen, gated accumulators are used, and the coefficients are circulated. Estimates for the number of transistors needed for a CMOS implementation are given.
Theoretical analysis of the coupling between whispering-gallery dielectric resonator modes and transmission lines
- Author(s): X.H. Jiao ; P. Guillon ; J. Obregon
- Source: Electronics Letters, Volume 21, Issue 3, p. 88 –89
- DOI: 10.1049/el:19850061
- Type: Article
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Whispering-gallery dielectric resonator modes coupled to one or two transmission lines form a millimetre-wave directional filter or a millimetre-wave stopband filter. The coupling is discussed and a formula for loaded Q is proposed.
Fibre-optic Solc filter for use in Raman amplification of light
- Author(s): K. Okamoto ; J. Noda ; H. Miyazawa
- Source: Electronics Letters, Volume 21, Issue 3, p. 90 –91
- DOI: 10.1049/el:19850062
- Type: Article
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Fibre-optic Solc filters, in which five consecutive fibre coils are tilted with respect to each other, have been fabricated. The wavelength of maximum transmittance is designed to coincide with 1.24 μm wavelength, and the half-power bandwidth is 61 nm. To show the feasibility of the fibre-optic Solc filter in Raman amplification of light, the third Stokes line (λ=1.24 μm) of 1.06 μm Nd:YAG laser light from a silica fibre was successfully extracted, while the pump light and other Stokes lines were suppressed below −13 dB.
Novel measuring method for spectral linewidth of laser diodes using fibre-optic ring resonator
- Author(s): S. Tai ; K. Kyuma ; T. Nakayama
- Source: Electronics Letters, Volume 21, Issue 3, p. 91 –93
- DOI: 10.1049/el:19850063
- Type: Article
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A novel measuring technique for the spectral linewidth of a laser diode was developed by using a fibre-optic ring resonator. Although the method is simple, a measuring accuracy within ±10% was obtained in the wide spectral linewidth range from 1 to 100 MHz.
Remote displacement measurements using a laser diode
- Author(s): G. Beheim and K. Fritsch
- Source: Electronics Letters, Volume 21, Issue 3, p. 93 –94
- DOI: 10.1049/el:19850064
- Type: Article
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A technique for measuring displacements remotely to minimum distances of 8 mm with a resolution of 2 μm is described. A dynamic interferometer method is employed using a frequency-ramped laser diode. A direct measurement of the period of the resulting beat signal is used to determine the displacement.
Etched-coupled-cavity InGaAsP/InP lasers
- Author(s): K.-L. Chen and S. Wang
- Source: Electronics Letters, Volume 21, Issue 3, p. 94 –95
- DOI: 10.1049/el:19850065
- Type: Article
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A new structure for coupled-cavity lasers operating at 1.25 μm wavelength is presented. Using chemical etching, we made a three-cavity laser from an index-guided channelled-substrate Fabry-Perot laser. It oscillates in a single longitudinal mode with a side-mode suppression ratio of 200:1 in the pumping current range of 120 mA to 220 mA. The same mode was maintained at a fixed current of 160 mA as the heat-sink temperature was varied from 9°C to 45°C. The advantages of this laser over other coupled-cavity lasers are the simplicity of fabrication, the accuracy of cavity length control, and the possibility of incorporating short-etalon sections in the coupled cavities.
Relative convergence for moment-method solutions of integral equations of the first kind as applied to dichroic problems
- Author(s): N.V. Shuley
- Source: Electronics Letters, Volume 21, Issue 3, p. 95 –97
- DOI: 10.1049/el:19850066
- Type: Article
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The a priori conditions of obtaining satisfactory numerical solutions for Fredholm integral equations that exhibit relative convergence are discussed. The example of a single periodic dichroic structure illustrates a suitable truncation rule.
Coupled-slot fin-line isolators
- Author(s): D.B. Sillars and L.E. Davis
- Source: Electronics Letters, Volume 21, Issue 3, p. 97 –98
- DOI: 10.1049/el:19850067
- Type: Article
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–98
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Preliminary results are presented for novel isolators in the frequency range 26.5–40.0 GHz. The structure is a ferrite-loaded coupled-slot fin-line with the ferrite magnetised parallel to the direction of propagation. The results suggest applications at higher frequencies.
Fundamental characteristics of an InGaAsP/InP laser transistor
- Author(s): J. Shibata ; Y. Mori ; Y. Sasai ; N. Hase ; H. Serizawa ; T. Kajiwara
- Source: Electronics Letters, Volume 21, Issue 3, p. 98 –100
- DOI: 10.1049/el:19850068
- Type: Article
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–100
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We have demonstrated a novel heterostructure device with functions of both a semiconductor laser and a heterojunction bipolar transistor, which is applicable to highly multifunctional optoelectronic integrated circuits. It can control both lasing power and output current. CW operation of the InGaAsP/InP transverse current injection laser at around room temperature has been achieved for the first time.
Scattering from finite extent frequency selective surfaces illuminated by arbitrary sources
- Author(s): R. Orta ; R. Tascone ; R. Zich
- Source: Electronics Letters, Volume 21, Issue 3, p. 100 –101
- DOI: 10.1049/el:19850069
- Type: Article
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–101
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A method is proposed for the computation of the field scattered from a dichroic plate placed in the near-field region of the feeds. The primary pattern of the feed and dichroic plate assembly has been computed.
Effect of intermodulation in multichannel optical heterodyne systems
- Author(s): P. Healey
- Source: Electronics Letters, Volume 21, Issue 3, p. 101 –103
- DOI: 10.1049/el:19850070
- Type: Article
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–103
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It is shown that large numbers of optical heterodyne channels may be frequency multiplexed over a single-mode optical fibre without the intermodulation byproducts of the photodetection process becoming a problem, provided the channels are spaced at five times their optical bandwidth, or greater.
Reduction of laser chirp in 1.5 μm DFB lasers by modulation pulse shaping
- Author(s): L. Bickers and L.D. Westbrook
- Source: Electronics Letters, Volume 21, Issue 3, p. 103 –104
- DOI: 10.1049/el:19850071
- Type: Article
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–104
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The dynamic linewidth of 1.5 μm ridge waveguide DFB lasers is shown to be reduced by shaping the pulse of the laser modulating waveform. Pulse shaping is performed by a second-order network designed to cancel the small-signal laser resonance. Results demonstrate a dynamic linewidth reduction from 1.4 Å to 0.55 Å FWHM for a 500 ps pulse.
45 GHz active HEMT mixer
- Author(s): S.A. Maas
- Source: Electronics Letters, Volume 21, Issue 3, p. 104 –105
- DOI: 10.1049/el:19850072
- Type: Article
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–105
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A low-noise 45 GHz mixer has been realised using a high electron mobility transistor (HEMT). This is the first reported active mixer above 30 GHz and the first reported HEMT mixer. The mixer exhibits 1.5 dB maximum gain at 4 dBm local oscillator (LO) power and 8.1 dB noise figure, including a 2.6 dB NF IF amplifier, at 2 dBm LO power.
68.3 km transmission with 1.37 Tbit km/s capacity using wavelength division multiplexing of ten single-frequency lasers at 1.5 μm
- Author(s): N.A. Olsson ; J. Hegarty ; R.A. Logan ; L.F. Johnson ; K.L. Walker ; L.G. Cohen ; B.L. Kasper ; J.C. Campbell
- Source: Electronics Letters, Volume 21, Issue 3, p. 105 –106
- DOI: 10.1049/el:19850073
- Type: Article
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–106
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We describe the first single-fibre lightwave transmission system with more than 1 Tbit km/s capacity. The ultrahigh-capacity transmission over 68.3 km of low-loss single-mode fibre was achieved by closely spaced wavelength division multiplexing of ten distributed feedback lasers. The lasers operated around 1.5 μm wavelength and the multiplexer channel spacing was 1.35 nm. Each laser/channel was modulated at 2 Gbit/s giving a total transmission capacity of 1.366 Tbit km/s.
Novel RF magnetic probe using LED linked with optical fibre
- Author(s): K. Hayashi ; Y. Ida ; K. Arai
- Source: Electronics Letters, Volume 21, Issue 3, p. 107 –108
- DOI: 10.1049/el:19850074
- Type: Article
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–108
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A novel radio-frequency magnetic probe composed of a small loop antenna and a light emitting diode (LED) linked with an optical fibre is presented, and its characteristics are experimentally examined. In order to confirm its validity, some of the RF field measurements made by the probe are also presented.
Theoretical analysis of the nonlinear behaviour of a loss-free distributed amplifier
- Author(s): V. Paschalidou and C.S. Aitchison
- Source: Electronics Letters, Volume 21, Issue 3, p. 108 –110
- DOI: 10.1049/el:19850075
- Type: Article
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–110
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In the letter the theoretical analysis of the behaviour of a nonlinear n-stage (n-MESFET) loss-free distributed amplifier is presented together with the results of this analysis. The transconductance of the MESFET was considered as the nonlinear element, while the other elements are assumed to be linear.
8 GHz, 10 W solid-state power amplifier for microwave digital radio
- Author(s): T.C. Cheng
- Source: Electronics Letters, Volume 21, Issue 3, p. 110 –111
- DOI: 10.1049/el:19850076
- Type: Article
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An 8 GHz, 10 W GaAs FET prototype power amplifier has been developed to replace the TWT in the Northern Telecom's digital microwave radio system. For a single bit stream of 91.04 Mbit/s, the residual bit error rate at 40 dBm output level was 1.0×10−32 compared with 1.0×10−23 for TWT; the AM/AM conversion ratio was 0.375 dB/dB and AM/PM was 0.84°/dB. The total mean time between failure of the amplifier was 350 000 h.
Radiometric measurement of antenna efficiency
- Author(s): J. Ashkenazy ; E. Levine ; D. Treves
- Source: Electronics Letters, Volume 21, Issue 3, p. 111 –112
- DOI: 10.1049/el:19850077
- Type: Article
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–112
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A radiometric method for measuring the efficiency of antennas with respect to a low-loss horn is presented. The letter includes a short explanation of the principle, a description of the measurement system and experimental results related to microstrip arrays.
Longitudinal coupling between elements in a disc-on-rod antenna array
- Author(s): H. Cory ; C.G. Parini ; A.D. Olver
- Source: Electronics Letters, Volume 21, Issue 3, p. 112 –113
- DOI: 10.1049/el:19850078
- Type: Article
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–113
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A general expression is proposed for the coupling of surface wave antennas based on the equivalence principle and on the reciprocity theorem. A particular application is presented for disc-on-rod antennas, and the coupling coefficient is evaluated as a function of frequency, the array parameters and the element parameters. A physical explanation of the results is suggested.
Packaged frequency-stable tunable 20 kHz linewidth 1.5 μm InGaAsP external cavity laser
- Author(s): M.R. Matthews ; K.H. Cameron ; R. Wyatt ; W.J. Devlin
- Source: Electronics Letters, Volume 21, Issue 3, p. 113 –115
- DOI: 10.1049/el:19850079
- Type: Article
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Packaged grating-tuned external cavity InGaAsP/InP lasers have been developed for use in coherent transmission systems that operate at a wavelength of 1.5 μm. The emission wavelength can be selected within a 60 nm range during manufacture, and can subsequently be tuned over 0.5 nm (63 GHz). The lasers have linewidths better than 20 kHz and show long-term relative frequency stability of better than 150 MHz.
Comparative reliability study of GaAs power MESFETs: mechanisms for surface-induced degradation and a reliable solution
- Author(s): J.M. Dumas ; D. Lecrosnier ; J. Paugam ; C. Vuchener
- Source: Electronics Letters, Volume 21, Issue 3, p. 115 –116
- DOI: 10.1049/el:19850080
- Type: Article
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–116
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A gradual degradation has been observed in the RF performance of GaAs power FETs. Electrical and physical analyses have been carried out, indicating the role played by the surface. A plasma enhanced chemical vapour deposited silicon nitride film is established as a suitable surface passivation.
Bandwidth-limited picosecond pulse generation by hybrid mode-locking in a ring cavity GaAlAs laser
- Author(s): J. McInerney ; L. Reekie ; D.J. Bradley
- Source: Electronics Letters, Volume 21, Issue 3, p. 117 –118
- DOI: 10.1049/el:19850081
- Type: Article
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–118
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Bandwidth-limited picosecond pulses have been obtained using hybrid active/passive mode-locking in an external cavity semiconductor diode ring laser. Active mode-locking by application of sinusoidal RF modulation at the cavity round-trip frequency to a diode laser providing gain is supplemented by passive mode-locking in a second laser which is biased to provide saturable loss. Simultaneous streak camera and scanning Fabry-Perot interferometer measurements show that bandwidth-limited pulses of 25 Ps duration are obtained. Operation is not limited to near laser threshold, and frequency detuning sensitivity is improved when compared to the case of purely active mode-locking.
Single-lobe phased-array diode lasers
- Author(s): W. Streifer ; A. Hardy ; R.D. Burnham ; D.R. Scifres
- Source: Electronics Letters, Volume 21, Issue 3, p. 118 –120
- DOI: 10.1049/el:19850082
- Type: Article
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We show mathematically that the lowest-order supermode of a real-refractive-index phase-locked semiconductor diode laser array, which radiates into a single narrow far-field lobe, is favoured by its lower threshold when the gain in the interspaces between the waveguides exceeds that of the waveguides themselves.
Seven-port millimetre-wave reflectometer
- Author(s): A.L. Cullen and A.J. Belfort
- Source: Electronics Letters, Volume 21, Issue 3, p. 120 –121
- DOI: 10.1049/el:19850083
- Type: Article
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–121
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A seven-port reflectometer covering the 26–40 GHz band is described. A special feature of the seven-port network is that the variation with frequency of the coupling coefficients of the directional couplers employed has very little effect on the accuracy of measurement. Experimental results are given.
Fibre-coupled Fabry-Perot wavelength demultiplexer
- Author(s): S.R. Mallinson
- Source: Electronics Letters, Volume 21, Issue 3, p. 121 –122
- DOI: 10.1049/el:19850084
- Type: Article
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–122
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A single-mode-fibre wavelength demultiplexer is described which employs a Fabry-Perot etalon integrally coupled to the transmission fibre. A linewidth (FWHM) of 5 nm, tunable over 180 nm in the 1.5 μm window, is reported.
Shallow p+ layers in In0.53Ga0.47As by Hg implantation
- Author(s): H. L'Haridon ; P.N. Favennec ; M. Salvi ; M. Razeghi
- Source: Electronics Letters, Volume 21, Issue 3, p. 122 –124
- DOI: 10.1049/el:19850085
- Type: Article
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We demonstrate for the first time a shallow p+−n homojunction fabricated on In0.53Ga0.47As by mercury ion implantation. Implanted mercury behaves as an acceptor in In0.53Ga0.47As and does not diffuse towards the bulk. Mercury implantation can be a good technique in realising a shallow p+−n junction in GaInAs.
Erratum: Coherent pulse generation by active modelocking of a GaAlAs laser in a Selfoc lens extended resonator
- Author(s): T.E. Dimmick ; P.-T. Ho ; G.L. Burdge
- Source: Electronics Letters, Volume 21, Issue 3, page: 124 –124
- DOI: 10.1049/el:19850086
- Type: Article
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Erratum: Switching circuits for yield-enhancement of an array chip
- Author(s): W.R. Moore
- Source: Electronics Letters, Volume 21, Issue 3, page: 124 –124
- DOI: 10.1049/el:19850087
- Type: Article
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