Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 21, Issue 24, 21 November 1985
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Volume 21, Issue 24
21 November 1985
Optical DPSK heterodyne detection experiments using DBR laser diodes with external optical feedback
- Author(s): K. Emura ; M. Shikada ; S. Yamazaki ; K. Komatsu ; I. Mito ; K. Minemura
- Source: Electronics Letters, Volume 21, Issue 24, p. 1121 –1122
- DOI: 10.1049/el:19850794
- Type: Article
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High receiver sensitivity, with 7 dB improvement over a direct detection system, has been achieved in a 400 Mbit/s optical DPSK heterodyne detection experiment using DBR laser diodes with external optical feedback. The influence of the laser output phase noise was evaluated experimentally in good agreement with theory.
Automatic timing alignment for regenerative repeaters
- Author(s): S. Whitt
- Source: Electronics Letters, Volume 21, Issue 24, p. 1122 –1123
- DOI: 10.1049/el:19850795
- Type: Article
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A novel circuit technique that provides automatic timing alighnment of digital regenerative repeaters is described. The scheme employs correlation feedback to maintain the correct clock and data phase relationship. Theoretical and practical results are presented.
High-rate fabrication of wholly synthesised fibre preforms by the multiflame VAD method using SiHCI3 raw materials
- Author(s): H. Suda ; S. Shibata ; M. Nakahara
- Source: Electronics Letters, Volume 21, Issue 24, p. 1123 –1124
- DOI: 10.1049/el:19850796
- Type: Article
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High-rate fabrication techniques for wholly synthesised graded-index fibre preforms were developed. An overall deposition rate of 5.6 g/min was attained using a multiflame VAD burner and using SiHCl3. A low loss of 0.25 dB/km at 1.59 μm and a small eccentricity of less than 0.4% were obtained.
GaAlAs/GaAs heterojunction bipolar phototransistors grown by LPE with a current gain of 50 000
- Author(s): A. Cazarre ; J. Tasselli ; A. Marty ; J.P. Bailbe ; G. Rey
- Source: Electronics Letters, Volume 21, Issue 24, p. 1124 –1126
- DOI: 10.1049/el:19850797
- Type: Article
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A simple mesa GaAlAs/GaAs heterojunction bipolar phototransistor fabricated by LPE growth technique is presented. A high current gain of the order of 50 000 has been obtained and is believed to be the highest ever reported for a bipolar device. The corresponding high sensitivity is about 15 000 A/W for an 800 nm illumination wavelength.
Floating integrator technique for switched-capacitor circuits employing reset cycles
- Author(s): W.C. Black
- Source: Electronics Letters, Volume 21, Issue 24, p. 1126 –1128
- DOI: 10.1049/el:19850798
- Type: Article
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A simple ‘floating’ integrator technique is presented that is applicable to both single-ended and differential switched-capacitor circuits which employ reset cycles. This method is useful in eliminating the effects of any input offset or interstage differential or common-mode offsets in DC-coupled circuits. A monolithic circuit is demonstrated which uses this technique to achieve accurate differential integration of low-level signals in the presence of substantial differential and common-mode input offsets.
Choice of PRF for error-tolerant range destaggering of radar targets
- Author(s): M. Piacentini
- Source: Electronics Letters, Volume 21, Issue 24, p. 1128 –1129
- DOI: 10.1049/el:19850799
- Type: Article
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High and medium PRF radars perform ranging by means of multiple PRFs chosen according to the Chinese remainder theorem. Unfortunately this theory does not cope with errors in range measurements. A new rule for the choice of the PRFs is proposed which is tolerant of a prescribed error amplitude in range measurements.
Linewidth of 1.3μm cleaved-coupled-cavity lasers
- Author(s): G.D. Boyd ; C.E. Soccolich ; J.E. Bowers ; T.L. Koch ; C.A. Burrus ; R.M. Jopson
- Source: Electronics Letters, Volume 21, Issue 24, p. 1129 –1131
- DOI: 10.1049/el:19850800
- Type: Article
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The linewidth and side-mode suppression ratio of three variable-gap C3 lasers were measured as a function of output power and drive currents. With feedback carefully eliminated, the narrowest linewidth obtained was 8 MHz at an output power of 13.6 mW. There was little correlation between line-width and suppression ratio.
Fabrication of long single-mode and multimode fluoride glass fibres by the double-crucible technique
- Author(s): H. Tokiwa ; Y. Mimura ; T. Nakai ; O. Shinbori
- Source: Electronics Letters, Volume 21, Issue 24, p. 1131 –1132
- DOI: 10.1049/el:19850801
- Type: Article
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Long single-mode and multimode fluoride glass fibres with core-clad structure are fabricated for the first time by the double-crucible technique. 500 m-long single-mode fibre and 700 m-long multimode fibre are obtained using ZrF4-BaF2-NaF-LaF3-AlF3 core and ZrF4-BaF2-NaF-LaF3-AlF3-HfF4 clad glasses.
Meteor burst polarisation trials
- Author(s): H. Nes
- Source: Electronics Letters, Volume 21, Issue 24, p. 1132 –1133
- DOI: 10.1049/el:19850802
- Type: Article
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Measurements over an 850 km path show that radio waves reflected by ionised meteor trails are typically received with the same polarisation as they were transmitted. Furthermore, a vertically polarised wave seems to suffer a 3–4 dB larger loss than a horizontally polarised one.
Mutual interaction between solitons of unequal amplitudes in optical fibre
- Author(s): P.L. Chu and C. Desem
- Source: Electronics Letters, Volume 21, Issue 24, p. 1133 –1134
- DOI: 10.1049/el:19850803
- Type: Article
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An exact solution to the mutual interaction of two solitons propagating in a nonlinear single-mode fibre is given. From this, it is shown that the soliton separation can be effectively maintained by allowing the solitons to have unequal amplitudes. This provides a simple way to maintain the high bandwidth of a nonlinear fibre.
The SINFET: a new high conductance, high switching speed MOS-gated transistor
- Author(s): J.K.O. Sin and C.A.T. Salama
- Source: Electronics Letters, Volume 21, Issue 24, p. 1134 –1136
- DOI: 10.1049/el:19850804
- Type: Article
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A new MOS power semiconductor device with a very low on-resistance and a switching speed comparable to conventional n-channel power MOSFETs is described. The fabrication process is similar to that of an n-channel lateral DMOS transistor but with the conventional high-low ‘ohmic’ drain contact replaced by a Schottky contact. In operation, the Schottky contact injects minority carriers to conductivity-modulate the n- drift region, thereby reducing the on-resistance by a factor of about ten compared with those of conventional n-channel power MOSFETs of comparable size and voltage capability. Furthermore, since only a small number of minority carriers are injected, the device speed is comparable to conventional n-channel power MOSFETs.
Dark noise of Ga0.47 In0.53As photoconductive detectors
- Author(s): A. Antreasyan ; C.Y. Chen ; P.A. Garbinski
- Source: Electronics Letters, Volume 21, Issue 24, p. 1136 –1138
- DOI: 10.1049/el:19850805
- Type: Article
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We have studied the dark noise of planar, interdigitated Ga0.47In0.53As photoconductive detectors by measuring the statistical distribution of the dark current under DC bias. The measurements reveal two interesting results: (i) the probability distribution of the dark current around its DC level is Gaussian and (ii) the standard deviation of the probability distribution grows exponentially with increasing bias voltage. Utilising these data an optimum bias level was calculated to maximise the receiver sensitivity of the detector.
Molecular-beam-epitaxy-grown single-longitudinal-mode GaAs-AlGaAs interferometric lasers on stepped-channelled substrates
- Author(s): J. Minghuang Hong ; M.J. Werner ; Yao-Hwa Wu ; Shyh Wang
- Source: Electronics Letters, Volume 21, Issue 24, p. 1138 –1140
- DOI: 10.1049/el:19850806
- Type: Article
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The GaAs-AlGaAs double-heterostructure interferometric lasers were successfully grown by molecular beam epitaxy on [011]-oriented-stepped-channelled GaAs(100) substrates. These lasers have a side-mode suppression ratio of greater than 200:1.
Detection of fixed targets embedded in log-normal clutter
- Author(s): T. Bucciarelli ; G. Fedele ; A. Forte
- Source: Electronics Letters, Volume 21, Issue 24, p. 1140 –1141
- DOI: 10.1049/el:19850807
- Type: Article
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Measurements of radar clutter using high-resolution systems show that clutter echoes cannot be modelled as Gaussian-distributed. A log-normal distribution is assumed and single-pulse detection performances are evaluated according to the Marcum-Swerling approach as well as the signal losses with respect to the Gaussian case.
Measurements of crosspolarisation and gain reduction due to dust on a microwave reflector antenna
- Author(s): S.O. Bashir and N.J. McEwan
- Source: Electronics Letters, Volume 21, Issue 24, p. 1141 –1143
- DOI: 10.1049/el:19850808
- Type: Article
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9 GHz measurements of effects of dust accretion on the surface of a reflector antenna confirm an earlier prediction of a larger gain reduction when the dust layer covers half the area. Crosspolarisation levels were higher than expected theoretically. Deposits on the primary feed also cause high crosspolarisation.
Analysis of reduced chirping of semiconductor lasers for improved single-mode-fibre transmission capacity
- Author(s): K. Petermann
- Source: Electronics Letters, Volume 21, Issue 24, p. 1143 –1145
- DOI: 10.1049/el:19850809
- Type: Article
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It is shown that direct modulation of semiconductor lasers yielding optical pulses with an exponential shape corresponds to a nearly chirp-free operation. With such pulses the maximum transmission capacity at λ = 1.55 μm is about 55 Gbit/s √km for a nondispersion-shifted single-mode fibre.
Low-OH-content fibre fabrication using particle-size control sol-gel method
- Author(s): S. Shibata ; F. Hanawa ; M. Nakahara
- Source: Electronics Letters, Volume 21, Issue 24, p. 1145 –1146
- DOI: 10.1049/el:19850810
- Type: Article
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By the sol-gel method using a new ‘particle-size control’ technique, a low-OH content at a level of 0.1 parts in 106 and a minimum optical loss of 1.8 dB/km at 1.6 μm wavelength has been achieved in pure silica core single-mode optical fibres. Improvement of dry gel properties using particle-size control is essential to bubble-free fibre drawing form dehydrated gel-derived glasses.
Linewidth reduction of cleaved-coupled-cavity lasers by optical feedback from a single-mode polarisation-preserving fibre external cavity
- Author(s): Y.K. Jhee ; K.-Y. Liou ; C.A. Burrus ; K.L. Hall
- Source: Electronics Letters, Volume 21, Issue 24, p. 1146 –1148
- DOI: 10.1049/el:19850811
- Type: Article
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Linewidth characteristics of a cleaved-coupled-cavity laser with a single-mode polarisation-preserving fibre external cavity have been investigated as a function of feedback power level and side-mode suppression ratio. The optimum power feedback ratio is near 2×10−4 for a minimum linewidth of about 30 kHz. A weak dependence of linewidth on side-mode suppression ratio is observed as long as the suppression ratio is greater than 500:1.
Automatic threshold-level control (ATC) for optimum decision operation in optical repeaters
- Author(s): N. Ohta ; J. Yamada ; T. Nishida
- Source: Electronics Letters, Volume 21, Issue 24, p. 1148 –1149
- DOI: 10.1049/el:19850812
- Type: Article
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An automatic threshold-level control (ATC) method for optimum decision operation in an optical repeater is studied using in-service error monitoring in the line code with the bit-inversion rule. Results of an experiment with a 110 Mbit/s optical repeater and a 10B1C line coder clarify that the ATC method is effective for maintaining the optimum decision threshold level.
Measurement of wavelength variation of mode field radius using far-field pattern method
- Author(s): E.L. Buckland and M. Nishimura
- Source: Electronics Letters, Volume 21, Issue 24, p. 1149 –1151
- DOI: 10.1049/el:19850813
- Type: Article
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The far-field pattern measuring technique is used to measure the wavelength dependence of the mode field radius in standard single-mode fibres. Chromatic dispersion calculated from these results is shown to be accurate using as few as three lasers. Both theoretical and experimental results are presented.
Dependence of single-longitudinal-mode probability on DFB laser facet structure
- Author(s): T. Matsuoka ; Y. Yoshikuni ; G. Motosugi
- Source: Electronics Letters, Volume 21, Issue 24, p. 1151 –1152
- DOI: 10.1049/el:19850814
- Type: Article
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The probability of single-longitudinal-mode (SLM) operation is calculated for three kinds of DFB facet structures. To obtain high SLM probability, a DFB laser with cleaved facets requires relatively large kL, but the introduction of asymmetry to facet reflectivity greatly relaxes the kL requirements.
Varactor diode for tuning high-power solid-state microwave oscillators
- Author(s): B.J. Downing
- Source: Electronics Letters, Volume 21, Issue 24, p. 1152 –1153
- DOI: 10.1049/el:19850815
- Type: Article
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A novel varactor diode has been developed for tuning high-power microwave solid-state oscillators. The resulting output power against frequency remains much flatter than conventional high-power varactor-tuned oscillators.
Double-resonance technique for C/V measurements of semiconductor devices
- Author(s): D. De Cogan and A. Alani
- Source: Electronics Letters, Volume 21, Issue 24, p. 1153 –1154
- DOI: 10.1049/el:19850816
- Type: Article
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A double-resonance technique has been developed for measuring the capacitance/voltage characteristics of junction semiconductor devices. It can be used in regions of forward bias where currently used methods are often unreliable.
High reliability of 1.5 μm two-step VPE-LPE-grown DC-PBH lasers
- Author(s): S. Sugou ; H. Nishimoto ; M. Kitamura ; I. Mito ; T. Yanase
- Source: Electronics Letters, Volume 21, Issue 24, p. 1154 –1156
- DOI: 10.1049/el:19850817
- Type: Article
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The reliability of 1.5 μm InGaAsP/InP DC-PBH lasers prepared by two-step hydride VPE and LPE was estimated at the 70°C, 5 mW constant-power mode. The low degradation rate (8×10−5/h) indicated high reliability of the two-step VPE-LPE-grown LDs with the VPE-grown active layer.
Switched-capacitor integrators with low finite-gain sensitivity
- Author(s): K. Haug ; F. Maloberti ; G.C. Temes
- Source: Electronics Letters, Volume 21, Issue 24, p. 1156 –1157
- DOI: 10.1049/el:19850818
- Type: Article
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Compensated SC integrator stages are analysed and compared with respect to their sensitivities to finite amplifier gain effects. Simple single-stage amplifiers may be used in such circuits even in highly selective filtering applications. This may allow an extension of the present frequency range of SC circuits.
Open-circuit voltage of induced/surface-doped junction solar cells
- Author(s): C.S. Hoi and Y.W. Lam
- Source: Electronics Letters, Volume 21, Issue 24, p. 1157 –1159
- DOI: 10.1049/el:19850819
- Type: Article
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The open-circuit voltage Voc of induced/surface-doped junction solar cells is evaluated numerically. For different substrate doping levels Na, different combinations of oxide charge density Qss and surface doping Nd produce different characteristics for reaching the maximum Voc. Cells optimally designed with certain combinations of Qss and Nd are shown to be immune to interface states.
New endfire radiator
- Author(s): C.A. King and D.A. Downs
- Source: Electronics Letters, Volume 21, Issue 24, p. 1159 –1161
- DOI: 10.1049/el:19850820
- Type: Article
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The design, construction and experimental results of a corrugated surface plane antenna are described in the letter. The antenna operates over a frequency of 500–1000 MHz with increased gain and narrow beamwidth in both planes.
Congestion avoidance in computer networks
- Author(s): M. Ilyas
- Source: Electronics Letters, Volume 21, Issue 24, p. 1161 –1162
- DOI: 10.1049/el:19850821
- Type: Article
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The letter presents simulation results for four different schemes of isarithmic congestion avoidance in computer networks. These schemes differ in their methods of distribution of permits among nodes of a computer network. Some simulation results are presented for all these schemes, in terms of throughput and delay for a 10-node network. These results reveal a few interesting properties of various schemes.
661.7 nm room-temperature CW operation of AlGaInP double-heterostructure lasers with aluminium-containing quaternary active layer
- Author(s): K. Kobayashi ; S. Kawata ; A. Gomyo ; I. Hino ; T. Suzuki
- Source: Electronics Letters, Volume 21, Issue 24, p. 1162 –1163
- DOI: 10.1049/el:19850822
- Type: Article
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We report for the first time on room-temperature (25°C) continuous-wave (CW) operation of AlGaInP double-heterostructure lasers with an aluminium-containing quaternary active layer. The active layer is (Al0.1Ga0.9)0.5In0.5P. The lasing wavelength is 661.7 nm, which is the shortest ever reported for semiconductor lasers. The threshold current is 120 mA (6.7 kA/cm2).
Optimum shaping of reflector antennas for specified radiation patterns
- Author(s): R.C. Brown ; P.J.B. Clarricoats ; H. Zhou
- Source: Electronics Letters, Volume 21, Issue 24, p. 1164 –1165
- DOI: 10.1049/el:19850823
- Type: Article
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A specified radiation pattern is achieved by shaping a reflector antenna to directly optimise the result in a diffractive analysis.
Unresolved carrier phase ambiguity and trellis decoding of CPFSK signals
- Author(s): N. Ekanayake
- Source: Electronics Letters, Volume 21, Issue 24, p. 1165 –1166
- DOI: 10.1049/el:19850824
- Type: Article
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It is widely known that coherent demodulation and trellis decoding of CPFSK signals yields superior performance in comparison to other coherent detection techniques. In the letter we show that trellis decoding of CPFSK signals is transparent to the phase ambiguities of the reconstructed reference tones of the coherent demodulator.
Analysis of stepped septum polarisers
- Author(s): T. Ege and P. Mcandrew
- Source: Electronics Letters, Volume 21, Issue 24, p. 1166 –1168
- DOI: 10.1049/el:19850825
- Type: Article
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A stepped septum polariser is investigated by using mode-matching techniques to obtain the generalised scattering matrix from which the propagation characteristics are determined. The modal fields employed are derived from the solution of the ridged waveguide eigenvalue problem. The results are compared to experiments and the agreement is good.
High-temperature heavy-hole and light-hole excitons and well-width dependence of excitons in InGaAs/InAIAs multiple-quantum-well structures
- Author(s): Y. Kawamura ; K. Wakita ; H. Asahi
- Source: Electronics Letters, Volume 21, Issue 24, p. 1168 –1169
- DOI: 10.1049/el:19850826
- Type: Article
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Well-resolved heavy-hole and light-hole exciton resonances in the absorption spectrum were observed at temperatures as high as 460 K in InGaAs/InAlAs multiple-quantum-well structures grown by molecular-beam epitaxy for the first time. Well-width dependences of the absorption spectrum and photoluminescence spectrum were also studied. The observed well-width dependences can be explained by monolayer fluctuation and alloy disorder.
Novel MOS memory for serial signal processing applications
- Author(s): D.S. McGrath and D.J. Myers
- Source: Electronics Letters, Volume 21, Issue 24, p. 1170 –1171
- DOI: 10.1049/el:19850827
- Type: Article
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A novel serial memory is reported, based on an array of MOS three transistor cells, which does not require serial-parallel data format convertors on the input and output. It can be used to realise compact, low-power delay elements of programmable length and is suitable for application in serial digital signal processing integrated circuits.
Dispersion reduction in single-mode-fibre links
- Author(s): D.S. Larner and V.A. Bhagavatula
- Source: Electronics Letters, Volume 21, Issue 24, p. 1171 –1172
- DOI: 10.1049/el:19850828
- Type: Article
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By combining lengths of single-mode fibre having different dispersion characteristics it is possible to reduce the overall dispersion at a given wavelength. This can be used to extend the section-length capability of dispersion-limited high-bit-rate systems.
Screening by aging test for highly reliable laser diodes
- Author(s): O. Fujita ; Y. Nakano ; G. Iwane
- Source: Electronics Letters, Volume 21, Issue 24, p. 1172 –1173
- DOI: 10.1049/el:19850829
- Type: Article
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The aging behaviour of laser diodes developed for undersea optical transmission systems is studied. Highly reliable laser diodes can be selected by a preliminary aging test (70°C, 5 mW, 1000 h).
Effective bandwidth for FM noise suppression in an injection-locked semiconductor laser
- Author(s): S. Saito ; F. Mogensen ; H. Olesen
- Source: Electronics Letters, Volume 21, Issue 24, p. 1173 –1175
- DOI: 10.1049/el:19850830
- Type: Article
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We present an analytical expression for the FM noise spectrum of an injection-locked semiconductor laser, taking the α-parameter into account. Under the phase-matched condition the FM noise is shown to be suppressed in an effective bandwidth equal to the locking half-width ΔωL0 for α=0. The effective bandwidth can be made larger by increasing the phase delay of the slave laser, but at the expense of a higher resonance peak.
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