Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 21, Issue 21, 10 October 1985
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Volume 21, Issue 21
10 October 1985
Combinatorial codes
- Author(s): V.C. Da Rocha
- Source: Electronics Letters, Volume 21, Issue 21, p. 949 –950
- DOI: 10.1049/el:19850670
- Type: Article
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The coding properties of a binary array of numbers are investigated. A recursive procedure for array generation is presented as well as a conjecture on the minimum distance of the codes obtained. The weight structure and minimum distance of the codes are easily computed using array properties. The resulting codes turn out to be circulant and homogeneous.
10–30 GHz monolithic GaAs travelling-wave divider/combiner
- Author(s): H.Q. Tserng and P. Saunier
- Source: Electronics Letters, Volume 21, Issue 21, p. 950 –951
- DOI: 10.1049/el:19850671
- Type: Article
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A four-way monolithic GaAs travelling-wave power divider/combiner has been designed, fabricated and evaluated. With a design centre frequency of 20 GHz, a bandwidth of from 10 GHz to 30 GHz has been measured. The insertion loss per dividing or combining action is less than 0.5 dB, with isolation between ports no worse than 20 dB. The input/output VSWRs are better than 2:1 across the same band. This divider/combiner can readily be used with monolithic GaAs power FET amplifiers to produce a several-fold increase in output powers over the 10 to 30 GHz frequency range.
High-speed long-wavelength optical modulation in InGaAs/InAlAs multiple quantum wells
- Author(s): K. Wakita ; Y. Kawamura ; Y. Yoshikuni ; H. Asahi ; S. Uehara
- Source: Electronics Letters, Volume 21, Issue 21, p. 951 –953
- DOI: 10.1049/el:19850672
- Type: Article
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A long-wavelength optical modulator has been fabricated which makes use of an electroabsorption effect in multiple quantum wells (MQWs). Here, InGaAs/InAlAs MQWs are prepared in a PIN configuration using molecular beam epitaxy (MBE). The rise time of the detected pulse modulation signal has been measured at 190 ps. This response level has been attributed to the detecting system response and RC time constant, and not to such intrinsic effects as carrier lifetime.
Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components
- Author(s): R.A. Soref and J.P. Lorenzo
- Source: Electronics Letters, Volume 21, Issue 21, p. 953 –954
- DOI: 10.1049/el:19850673
- Type: Article
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The first all-silicon integrated-optical components for 1.3/1.6 μm have been demonstrated. An optical power divider with end-fire coupling was constructed from intersecting channel waveguides. Guides were fabricated by plasma-etching of an intrinsic Si layer grown epitaxially on a heavily doped Si substrate (n on n+ or p on p+). Active components are proposed.
Possible fused fibre in-phase/quadrature measuring multiport
- Author(s): A.R.L. Travis and J.E. Carroll
- Source: Electronics Letters, Volume 21, Issue 21, p. 954 –955
- DOI: 10.1049/el:19850674
- Type: Article
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The structural properties required for a four-fibre fused coupler to give a passive in-phase/quadrature multiport are outlined.
Fabrication of n+ ledge channel structure for GaAs FETs with a single lithography step
- Author(s): H.M. Macksey and R.D. Hudgens
- Source: Electronics Letters, Volume 21, Issue 21, p. 955 –957
- DOI: 10.1049/el:19850675
- Type: Article
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A self-aligned process has been developed using multiple resist layers to fabricate the n+ ledge channel structure on GaAs FETs with a single lithography step. The new process eliminates one critical alignment step and has greater flexibility for the control of channel parameters. Power FET performance is comparable to that of conventionally produced devices.
Stabilisation of external optical feedback phase in a semiconductor laser
- Author(s): S.K. Jain and S. Ezekiel
- Source: Electronics Letters, Volume 21, Issue 21, p. 957 –958
- DOI: 10.1049/el:19850676
- Type: Article
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The linewidth of a semiconductor laser was reduced and held to much less than 1 MHz using a simple DC scheme for the stabilisation of the phase of external optical feedback. This scheme was based on the antisymmetric response to feedback phase at the two laser facets.
Chirping in 1.55 μm vapour-phase-transport distributed feedback (VPTDFB) semiconductor lasers under picosecond gain switching and 4 GHz modulation
- Author(s): Chinlon Lin and T.L. Koch
- Source: Electronics Letters, Volume 21, Issue 21, p. 958 –960
- DOI: 10.1049/el:19850677
- Type: Article
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VPTDFB semiconductor lasers have been shown to exhibit particularly low transient frequency chirp resulting in record distances for dispersive fibre transmission at 2 to 4 Gbit/s rates. The letter reports experimental study of chirping in 1.55 μm VPTDFB lasers under the demanding situation of high-speed modulation with high pulse on/off ratios. The laser was modulated with 100 ps current pulses from a comb generator, or with high-frequency RF at 4 GHz. It is found that the laser's chirped linewidth is between 2 to 8 Å for modulation on/off ratios from 4:1 to more than 20:1. We infer that at high laser pulse on/off ratios there will be significant pulse distortion at 8 to 10 Gbit/s rates for fibre distance of ≳≫60 km even with these low chirp VPTDFB lasers. However, the exact nature of this distortion and its system impact in dispersive fibre transmission may depend in detail on the specific laser parameters and system operating conditions.
Growth of thin-film lithium niobate by molecular beam epitaxy
- Author(s): R.A. Betts and C.W. Pitt
- Source: Electronics Letters, Volume 21, Issue 21, p. 960 –962
- DOI: 10.1049/el:19850678
- Type: Article
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Lithium niobate has been grown in single-crystal thin-film form by molecular beam epitaxy. Single-crystal films were grown on bulk-crystal LiNbO3 and on sapphire (α-Al2O3). The layers have been excited as optical waveguides, and the refractive indices and optical propagation loss were measured.
Via holes for GaAs MMICs fabricated using reactive ion etching
- Author(s): K.P. Hilton and J. Woodward
- Source: Electronics Letters, Volume 21, Issue 21, p. 962 –963
- DOI: 10.1049/el:19850679
- Type: Article
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A dry etching process has been employed in the successful fabrication of through-substrate via holes for GaAs MMICs. The etching was carried out using Freon 12 (CCl2F2) as the etching gas. These vias have been shown to have low loss up to 12GHz.
Configuration selection for two-layer memory network pattern classifiers
- Author(s): M.C. Fairhurst and M. Mattoso Maia
- Source: Electronics Letters, Volume 21, Issue 21, p. 963 –964
- DOI: 10.1049/el:19850680
- Type: Article
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Appropriate allocation of decision-making tasks between processing levels in a hierarchical memory network pattern classifier can enhance efficient utilisation of resources and reduce implementation complexity. The letter describes and compares two strategies for such resource allocation, with specific reference to decision refinement between processing levels.
2400 bit/s DMSK modem for mobile satellite service
- Author(s): F. Davarian and J. Sumida
- Source: Electronics Letters, Volume 21, Issue 21, p. 965 –966
- DOI: 10.1049/el:19850681
- Type: Article
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The letter describes the implementation of a differentially coherent receiver suitable for bursty signal transmission over fading channels. To meet the severe system phase response requirement, this implementation is conducted at baseband. Means of frequency correction (AFC) is also shown. This receiver is simple and can easily be fabricated using VLSI technology.
Comment: Fast method for calculating cutoff frequencies in single-mode fibres with arbitrary index profiles
- Author(s): A. Alphones
- Source: Electronics Letters, Volume 21, Issue 21, page: 966 –966
- DOI: 10.1049/el:19850682
- Type: Article
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Reply: Fast method for calculating cutoff frequencies in single-mode fibres with arbitrary index profiles
- Author(s): P.Y.P. Chen
- Source: Electronics Letters, Volume 21, Issue 21, page: 966 –966
- DOI: 10.1049/el:19850683
- Type: Article
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Positive/negative reflection-type SAW reflectors on ST-quartz using new fabrication technique
- Author(s): K. Yamanouchi ; M. Takeuchi ; T. Meguro ; Y. Wagatsuma
- Source: Electronics Letters, Volume 21, Issue 21, p. 966 –968
- DOI: 10.1049/el:19850684
- Type: Article
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A positive/negative reflection-type (PNR) SAW grating reflector on an ST-quartz substrate utilising both a gold and aluminium strip and its simple fabrication technique requiring no critical mask alignment are described.
Polarisation effects in SAW acousto-optic interactions
- Author(s): S.W. Li and E. Bourkoff
- Source: Electronics Letters, Volume 21, Issue 21, p. 968 –969
- DOI: 10.1049/el:19850685
- Type: Article
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The polarisation dependence of the incidence-angle bandwidth of the acousto-optic interaction between an unguided, ‘side-entry’, optical beam and a surface acoustic wave in YZ-LiNbO3 is analysed and compared with reported experimental results.
Picosecond optical pulse compression from gain-switched 1.3 μm distributed-feedback laser diode through highly dispersive single-mode fibre
- Author(s): A. Takada ; T. Sugie ; M. Saruwatari
- Source: Electronics Letters, Volume 21, Issue 21, p. 969 –971
- DOI: 10.1049/el:19850686
- Type: Article
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The first demonstration to compress the linearly chirped optical pulses from a gain-switched distributed-feedback laser diode (DFB-LD) is described at 1.3 μm wavelength. By travelling through a highly dispersive single-mode fibre with 48 ps/nm normal dispersion, a 26 ps (FWHM) pulse having red-shift frequency chirping of 85 GHz (FWHM) is compressed to 8.3 ps with the time-bandwidth product of 0.71.
Frequency-dependent SNR for time-base distortions in magnetic recording
- Author(s): U. Totzek
- Source: Electronics Letters, Volume 21, Issue 21, p. 971 –972
- DOI: 10.1049/el:19850687
- Type: Article
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Time-base distortions are modelled with a linear, time-invariant system plus an uncorrelated but signal-dependent disturbing noise. The signal/noise ratio (SNR) in this model is computed and the theoretical results are compared with laboratory measurements of flutter effects in analogue magnetic recorders.
Monotonic descent algorithm to choose pulse locations in the excitation sequence of a multipulse speech coder
- Author(s): T.F. Thorpe and N.G. Kingsbury
- Source: Electronics Letters, Volume 21, Issue 21, p. 972 –973
- DOI: 10.1049/el:19850688
- Type: Article
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Determination of pulse locations by a multipulse coder is formulated as the minimisation of an error function in P-dimensional discrete space. A suboptimum solution is presented which offers better performance than conventional designs.
Postmetallisation annealing of aluminium-silicon gate MOS capacitors
- Author(s): I. McGillivray ; J.M. Robertson ; A.J. Walton
- Source: Electronics Letters, Volume 21, Issue 21, p. 973 –974
- DOI: 10.1049/el:19850689
- Type: Article
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Postmetallisation annealing (PMA) is widely used to reduce midgap interface trap densities in aluminium gate MOS structures. It is shown that the presence of 1% silicon in the aluminium inhibits PMA and that increased PMA times result in an increase rather than a decrease in midgap interface trap densities for AlSi.
Gain saturation effects in supermodes of phase-locked semiconductor laser arrays
- Author(s): J. Katz and W.K. Marshall
- Source: Electronics Letters, Volume 21, Issue 21, p. 974 –976
- DOI: 10.1049/el:19850690
- Type: Article
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A basic modal analysis that includes gain saturation effects in phase-locked semiconductor laser arrays is presented. For a particular supermode operation, different lasers in the array emit different amounts of light, and hence their (waveguide) propagation constants are modified differently. Solving the lasers' rate equations self-consistently with the coupled-mode wave equations seems to provide an answer that is in much better agreement with experimental results than the result using only the coupled-mode analysis.
Logic performance of Si3N4-n GaAs quasinormally off MISFETs
- Author(s): A.J. Harrison and J.G. Swanson
- Source: Electronics Letters, Volume 21, Issue 21, p. 976 –978
- DOI: 10.1049/el:19850691
- Type: Article
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n-GaAs MISFETs can be operated in a quasinormally off mode using charge stored in interface states to shift the threshold voltage. The transition from static to dynamic operation can be shown to explain the logic levels achievable. Ring oscillator results predict very promising gate delays and speed-power products.
Resolution and sampling rate needed for quantisation of a narrowband signal in wideband noise
- Author(s): A.P. Dekker
- Source: Electronics Letters, Volume 21, Issue 21, p. 978 –979
- DOI: 10.1049/el:19850692
- Type: Article
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It is investigated how large the input noise to a quantiser can be with respect to the quantisation interval and the input noise bandwidth with respect to the sampling rate in order that quantisation noise does not degrade a system's signal/ noise ratio more than a specified amount.
Algorithm for multichannel LMS adaptive filtering
- Author(s): S.J. Elliott and P.A. Nelson
- Source: Electronics Letters, Volume 21, Issue 21, p. 979 –981
- DOI: 10.1049/el:19850693
- Type: Article
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A modification of the LMS algorithm is presented in which the coefficients of an array of FIR filters, whose outputs are linearly coupled to an array of sensors, are adapted to minimise the mean-square sum of the error signals from these sensors. The application of the algorithm to the control of distributed parameter systems is discussed.
Measurement of linewidth broadening factor in gain-switched InGaAsP injection lasers by CHP method
- Author(s): M. Osiński ; D.F.G. Gallagher ; I.H. White
- Source: Electronics Letters, Volume 21, Issue 21, p. 981 –982
- DOI: 10.1049/el:19850694
- Type: Article
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First measurements of the semiconductor laser linewidth broadening factor α using a recently proposed CHP (chirp-halfwidth product) method are reported. Gain-switched optical pulses have been generated by sinusoidal RF and comb generator drive. The simultaneous recording of streak-camera and monochromator traces provides the required data for determination of α. The values of α between 6 and 7.5 are obtained for a 1.3 μm mesa laser. Computer simulations predict that the CHP formula should provide an estimate of α within ±15% for either comb generator or hard sinusoidal drive.
SAGM avalanche photodiode optical receiver for 2 Gbit/s and 4 Gbit/s
- Author(s): B.L. Kasper ; J.C. Campbell ; A.H. Gnauck ; A.G. Dentai ; J.R. Talman
- Source: Electronics Letters, Volume 21, Issue 21, p. 982 –984
- DOI: 10.1049/el:19850695
- Type: Article
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A high-sensitivity optical receiver has been designed using an InGaAs avalanche photodetector and a low capacitance (0.63 pF) hybrid GaAs FET preamplifier. Measured receiver sensitivities at 1.51 μm wavelength of −36.6 dBm at 2 Gbit/s and −31.2 dBm at 4 Gbit/s are the best obtained to date at these bit rates.
PLA folding algorithm from compatibility relations
- Author(s): N.N. Biswas
- Source: Electronics Letters, Volume 21, Issue 21, p. 984 –986
- DOI: 10.1049/el:19850696
- Type: Article
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The letter reports an algorithm for the folding of programmable logic arrays. The algorithm is valid for both column and row folding, although it has been presented considering only the simple column folding. The pairwise compatibility relations among all the pairs of the columns of the PLA are plotted in a matrix called the compatibility matrix of the PLA. A foldable compatibility matrix (FCM), a new concept defined in the letter, is then derived from the compatibility matrix. Once an FCM is obtained, the ordered pairs of fold-able columns and the reordering of the rows are readily determined.
Analysis of asymmetrical coplanar waveguide and coplanar strip lines with anisotropic substrate
- Author(s): T. Kitazawa and Y. Hayashi
- Source: Electronics Letters, Volume 21, Issue 21, p. 986 –987
- DOI: 10.1049/el:19850697
- Type: Article
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An accurate analytical procedure is presented for the asymmetrical coplanar waveguide and coplanar strip lines with uniaxially anisotropic substrate. Frequency-dependent hybrid-mode values of the propagation constants and characteristic impedances are presented, and they are in good agreement with the quasistatic values at low frequencies for all cases.
Radially anisotropic lightguide mode selector
- Author(s): R.J. Black ; C. Veilleux ; J. Bures ; J. Lapierre
- Source: Electronics Letters, Volume 21, Issue 21, p. 987 –989
- DOI: 10.1049/el:19850698
- Type: Article
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Fibres with radially anisotropic claddings present another important building block to the general problem of anisotropic guides with the principal axes as a function of position. It is possible for the fundamental mode to be TE01 or TM01.
PnP-type InP/InGaAsP/InP bipolar transistor
- Author(s): L.M. Su ; H. Schroeter-Janssen ; K.C. Li ; N. Grote
- Source: Electronics Letters, Volume 21, Issue 21, p. 989 –990
- DOI: 10.1049/el:19850699
- Type: Article
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A PnP double-heterostructure InGaAsP/InP bipolar transistor was fabricated which is capable of bilateral operation. Forward and reverse current gains of about 15 and 5, respectively, were achieved. In the emitter-up configuration, an offset voltage of 1 V, believed to be due to the valence band discontinuity at the base/collector heterojunction, occurs in the Ic/VCE characteristics.
Scanning acoustic microscopy using PVDF concave lenses
- Author(s): A. Labréche ; A. Beauséjour ; M. Castonguay ; J.D.N. Cheeke
- Source: Electronics Letters, Volume 21, Issue 21, p. 990 –992
- DOI: 10.1049/el:19850700
- Type: Article
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The construction of a concave acoustic lens using PVDF film is described. Acoustic images in the frequency range 30–210 MHz have been obtained and the resolution approaches the diffraction limit. We conclude that the lens shows considerable potential for further development of the acoustic microscope as well as for several specific applications.
Measurement of optical bistability in an InGaAsP laser amplifier at 1.5 μm
- Author(s): H.J. Westlake ; M.J. Adams ; M.J. O'Mahony
- Source: Electronics Letters, Volume 21, Issue 21, p. 992 –993
- DOI: 10.1049/el:19850701
- Type: Article
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Measured hysteresis characteristics for an amplifier operating at room temperature are presented and compared with the predictions of a computer model. The onset of optical bistability was seen to occur at input powers of around 2 μW.
1.3 μm edge-emitting diodes launching 250 μW into a single-mode fibre at 100 mA
- Author(s): G. Arnold ; H. Gottsmann ; O. Krumpholz ; E. Schlosser ; E.-A. Schurr
- Source: Electronics Letters, Volume 21, Issue 21, p. 993 –994
- DOI: 10.1049/el:19850702
- Type: Article
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993
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For the first time a light power exceeding 100 μW has been coupled into a single-mode fibre from an edge-emitting diode at a current less than 100 mA. The design and properties of the diodes are described in the letter.
Performance of AFC for phase noise reduction of optical sources
- Author(s): B. Glance
- Source: Electronics Letters, Volume 21, Issue 21, p. 994 –996
- DOI: 10.1049/el:19850703
- Type: Article
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The letter evaluates the use of an automatic frequency control (AFC) circuit for reducing the phase noise of an optical source. The results show that this type of circuit reduces efficiently only the low-frequency variations of the phase noise. They also show that the high-frequency components of the phase noise can be significantly enhanced relative to those of the free-running source if the product of the loop gain by the loop bandwidth is made too large. These effects result from the time delay presented by the error signal and by the large loop gain needed to reduce sufficiently the phase noise of the optical source.
Floating FDNR employing a new CCII− conveyor implementation
- Author(s): B. Wilson
- Source: Electronics Letters, Volume 21, Issue 21, p. 996 –997
- DOI: 10.1049/el:19850704
- Type: Article
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A new high-performance circuit implementation of a CCII− current conveyor suitable for monolithic fabrication is reported. Two of the new conveyors have been used to synthesise an accurate wideband floating frequency-dependent negative resistor (FDNR), for which experimental results are presented.
Simple formulas for the characteristics of limiter phase detectors
- Author(s): J. Kováts
- Source: Electronics Letters, Volume 21, Issue 21, p. 997 –998
- DOI: 10.1049/el:19850705
- Type: Article
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Characteristics of limiter phase detectors can be described by Fourier series. However, if the characteristic has discontinuities, the approximation is not appropriate in the vicinity of these points. In the letter the serraphil functions are introduced to give simpler and more accurate formulas.
Delay-triggered optical switching in twin-stripe IRW lasers
- Author(s): D. Maclean ; I.H. White ; J.E. Carroll ; R.G. Plumb
- Source: Electronics Letters, Volume 21, Issue 21, p. 999 –1000
- DOI: 10.1049/el:19850706
- Type: Article
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We report a novel switching mechanism in InGaAsP twin-stripe IRW lasers operating under pulsed conditions at 1.3 μm wavelength. An interesting feature of the switch is its ability to discriminate differential delays between the arrival of 10 ns rise time drive pulses to a resolution of less than 200 ps. The switch is caused by changes in the charge carrier density of less than 0.5% which suggests subpicojoule switching energies.
Switched-capacitor ladder filters with zero worst-case sensitivity at reflection zeros
- Author(s): T. Inoue and F. Ueno
- Source: Electronics Letters, Volume 21, Issue 21, p. 1000 –1001
- DOI: 10.1049/el:19850707
- Type: Article
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A method for synthesising a parasitic-compensated switched-capacitor (SC) ladder filter with the property that the worst-case sensitivity of its amplitude response is zero at every reflection zero is presented. The stopband sensitivity of this SC filter is low as well as its passband sensitivity.
Two new types of hazard in asynchronous circuits
- Author(s): R. Andrew
- Source: Electronics Letters, Volume 21, Issue 21, p. 1001 –1002
- DOI: 10.1049/el:19850708
- Type: Article
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Two new types of hazard in asynchronous circuits are identified. They are termed input propagation hazard (IPH) and state propagation hazard (SPH). Closely related to essential hazards, they occur in circuits which have multiple or non-critical race transitions.
Addendum: Enhanced performance of 2 μm N-MOSFETs in doubly recrystallised SOS films
- Author(s): R.L. Maddox and I. Golecki
- Source: Electronics Letters, Volume 21, Issue 21, p. 1002 –1003
- DOI: 10.1049/el:19850709
- Type: Article
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Erratum: New DC-free line code of minimum bandwidth with increased eye width
- Author(s): Je in Baek and Jae-Kyoon Kim
- Source: Electronics Letters, Volume 21, Issue 21, page: 1003 –1003
- DOI: 10.1049/el:19850710
- Type: Article
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Erratum: Limits to power transmission in optical fibres
- Author(s): K.C. Byron and G.D. Pitt
- Source: Electronics Letters, Volume 21, Issue 21, page: 1003 –1003
- DOI: 10.1049/el:19850711
- Type: Article
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Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
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54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article