Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 21, Issue 15, 18 July 1985
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Volume 21, Issue 15
18 July 1985
Self-alignment a-Si FET by using a lift-off technique
- Author(s): H. Okada ; Y. Uchida ; Y. Watanabe ; M. Matsumura
- Source: Electronics Letters, Volume 21, Issue 15, p. 633 –634
- DOI: 10.1049/el:19850448
- Type: Article
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New self-alignment amorphous-silicon field-effect transistors (a-Si FETs) have been proposed and demonstrated. This method uses lift-off and ion-implantation techniques, and no voltage offset was observed. Simple analysis indicates that this structure may be used to produce devices with channel lengths down to 5 μm.
Tunable birefringent wavelength-division multiplexer/demultiplexer
- Author(s): P. Melman ; W.J. Carlsen ; B. Foley
- Source: Electronics Letters, Volume 21, Issue 15, p. 634 –635
- DOI: 10.1049/el:19850449
- Type: Article
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A tunable wavelength-division multiplexer/demultiplexer, based on a polarisation-insensitive birefringent optical filter design, is described. The two channels of the device can each be tuned, with the channel separation adjustable over a wide range. Experiments with 6 to 30 nm laser channel separations have yielded optical crosstalk values of less than −20 dB.
Computer-aided design of stray-insensitive second-order switched-capacitor filters
- Author(s): P.V. Ananda Mohan
- Source: Electronics Letters, Volume 21, Issue 15, p. 635 –636
- DOI: 10.1049/el:19850450
- Type: Article
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A Fortran program for the minimum chip-area design of a Fleischer-Laker stray-insensitive biquad is described.
Voltage variable microwave phase shifter
- Author(s): R.E. Neidert and C.M. Krowne
- Source: Electronics Letters, Volume 21, Issue 15, p. 636 –638
- DOI: 10.1049/el:19850451
- Type: Article
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Results are given on the fabrication, test and theory of operation of a voltage-controlled, continuously variable phase shifter designed to operate from DC to 150 GHz. The device was fabricated in a way that makes it compatible with current gallium arsenide monolithic microwave circuit technology.
n+ self-aligned-gate AlGaAs/GaAs heterostructure FET
- Author(s): T. Mizutani ; K. Arai ; K. Oe ; S. Fujita ; F. Yanagawa
- Source: Electronics Letters, Volume 21, Issue 15, p. 638 –639
- DOI: 10.1049/el:19850452
- Type: Article
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The n+ self-aligned-gate technology for high-performance AlGaAs/GaAs heterostructure FETs employing rapid lamp annealing have been studied. The large transconductance of 330 mS/mm at 300 K and 530 mS/mm at 83 K was obtained for the 0.7 μm gate length device, by reducing the source resistance to 0.6 Ωmm. The minimum delay time of 18.7 ps was obtained with a power dissipation of 9.1 mW at 300 K. The standard deviation of the delay time was as small as 1.1 ps at a fixed bias of 2.5 V.
Correcting phased arrays for multipath or for conformal topography
- Author(s): N.R.W. Long
- Source: Electronics Letters, Volume 21, Issue 15, p. 639 –640
- DOI: 10.1049/el:19850453
- Type: Article
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The theoretical basis for a calibration scheme for phasedarray antennas is presented. A modified beamforming matrix is produced that will correct for the effects of multipath propagation. An extension of this is that, since it is not necessary to know the exact disposition of the array elements, the same scheme can be used to derive beamformers for conformal arrays.
Floating-impedance convertors using current conveyors
- Author(s): C. Toumazou and F.J. Lidgey
- Source: Electronics Letters, Volume 21, Issue 15, p. 640 –642
- DOI: 10.1049/el:19850454
- Type: Article
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A floating-negative-impedance convertor and a generalised impedance convertor are described. The circuits use a practical realisation of the CCII+ type current conveyor, the design being based on a differential input/output transadmittance cell.
Novel single-ended CMOS transconductance amplifiers
- Author(s): D. Ray and J. Gorecki
- Source: Electronics Letters, Volume 21, Issue 15, p. 642 –643
- DOI: 10.1049/el:19850455
- Type: Article
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Two novel CMOS single-ended amplifiers are presented. Suitable for switched-capacitor-filter designs, they exhibit high gain and bandwidth as well as high PSRR, low power and small size.
Comment: Exact design of highpass switched-capacitor filters of the LDI type
- Author(s): J. Mavor
- Source: Electronics Letters, Volume 21, Issue 15, page: 643 –643
- DOI: 10.1049/el:19850456
- Type: Article
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Reduction of finite-gain effect in switched-capacitor filters
- Author(s): K. Nagaraj ; K. Singhal ; T.R. Viswanathan ; J. Vlach
- Source: Electronics Letters, Volume 21, Issue 15, p. 644 –645
- DOI: 10.1049/el:19850457
- Type: Article
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A simple technique for significantly reducing the effect of the finite gain of amplifiers on the performance of switched-capacitor filters is presented. The effectiveness of this technique has been established by extensive simulation studies. This technique has the potential for simplifying amplifier design and extending the frequency range of switched-capacitor filters by trading gain for bandwidth.
50 nm line fabrication in 0.5 μm PMMA film on silicon substrates with a 20 kV e-beam
- Author(s): H. Yamashita and Y. Todokoro
- Source: Electronics Letters, Volume 21, Issue 15, p. 645 –646
- DOI: 10.1049/el:19850458
- Type: Article
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With an isopropyl alcohol (IPA) development, 50–100 nm lines are fabricated in 0.5 μm PMMA film on silicon substrates with a 20 kV e-beam. The slope of solubility rate in an IPA development is 10.2 at a high electron dose. A higher contrast and an improved resolution are obtained by using an IPA development.
Hybrid integration of a laser diode and high-silica multimode optical channel waveguide on silicon
- Author(s): H. Terui ; Y. Yamada ; M. Kawachi ; M. Kobayashi
- Source: Electronics Letters, Volume 21, Issue 15, p. 646 –648
- DOI: 10.1049/el:19850459
- Type: Article
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An InGaAsP laser diode with 1.34 μm wavelength and a high-silica multimode optical waveguide were integrated on a common Si substrate using an alignment guide, which is formed simultaneously with the waveguide, for laser diode mounting. The laser-waveguide coupling efficiency was 30%.
Single-mode operation of 1.55 μm semiconductor lasers using a volume holographic grating
- Author(s): P. Mills and R. Plastow
- Source: Electronics Letters, Volume 21, Issue 15, p. 648 –649
- DOI: 10.1049/el:19850460
- Type: Article
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A volume holographic grating in iron-doped lithium niobate has been demonstrated as a novel infra-red selective filter to produce stable single-mode output from a semiconductor laser operating at 1.55 μm. Preliminary results show that a ∼16 dB adjacent-mode rejection ratio can be obtained.
Useful matrix theorem with applications to electronic circuit theory
- Author(s): M.C. Soper
- Source: Electronics Letters, Volume 21, Issue 15, p. 649 –651
- DOI: 10.1049/el:19850461
- Type: Article
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A new matrix theorem is described which has applications to electronic circuit theory and control theory.
Subjective evaluation of white noise effect on picture quality of improved television
- Author(s): Y. Yamamoto and Y. Ogata
- Source: Electronics Letters, Volume 21, Issue 15, p. 651 –652
- DOI: 10.1049/el:19850462
- Type: Article
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An effective technique for improving picture quality is to apply a digital signal processing technique at the receiving end of the information transmitted according to NTSC standards. Subjective assessment of the white noise effect on picture quality is carried out within the SNR range which is discussed as a performance objective for a 4 MHz band video transmission system.
Surface-oriented low-parasitic Mott diode for EHF mixer applications
- Author(s): U.K. Mishra ; S.C. Palmateer ; S.J. Nightingale ; M.A.G. Upton ; P.M. Smith
- Source: Electronics Letters, Volume 21, Issue 15, p. 652 –653
- DOI: 10.1049/el:19850463
- Type: Article
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The design and fabrication of a novel air-bridged, low-parasitic Mott diode is described. The devices were fabricated on epitaxial layers grown by MBE on SI undoped LEC substrates. Measurements on the diode at DC and RF showed that the zero bias capacitance was 0.025 pF, the parasitic capacitance 0.007 pF and the series resistance was approximately 10 Ω. Diode pairs were incorporated into monolithic single balanced mixers which exhibited a conversion loss of 6 dB at 30 GHz with a 1 GHz IF.
Stabilised PSK transmitter with negative electrical feedback to a semiconductor laser
- Author(s): G. Wenke and S. Saito
- Source: Electronics Letters, Volume 21, Issue 15, p. 653 –655
- DOI: 10.1049/el:19850464
- Type: Article
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A method for PSK signal generation using a semiconductor laser in an optical phase-locked loop is presented. The error signal caused by imperfect PM response and phase noise is obtained by optical homodyne detection and fed back to the semiconductor laser. Flat PM response up to approximately 8 MHz is achieved and PSK signal generation is demonstrated.
Characteristics of linewidth narrowing of a 1.5 μm DFB laser with a short GRIN-rod external coupled cavity
- Author(s): T.P. Lee ; S.G. Menocal ; H. Matsumura
- Source: Electronics Letters, Volume 21, Issue 15, p. 655 –656
- DOI: 10.1049/el:19850465
- Type: Article
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A short GRIN-rod is coupled to a 1.5 μm InGaAsP DFB laser to achieve a linewidth reduction from 34 MHz to 1.5 MHz at 2.5 mW. Characteristics of linewidth narrowing with respect to the displacement of the GRIN-rod, the laser temperature and the driving current are presented.
450 Mbit/s optical frequency-division-multiplexing transmission with an 11 GHz channel spacing
- Author(s): H. Toba ; K. Inoue ; K. Nosu
- Source: Electronics Letters, Volume 21, Issue 15, p. 656 –657
- DOI: 10.1049/el:19850466
- Type: Article
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A 450 Mbit/s 13 km optical frequency-division-multiplexing transmission with an 11 GHz channel spacing was demonstrated at 1.5 μm wavelength to confirm the feasibility of a laser-diode frequency-stabilising circuit and a narrow-channel-spaced optical demultiplexer.
Spectral linewidth of external cavity semiconductor lasers with strong, frequency-selective feedback
- Author(s): R. Wyatt
- Source: Electronics Letters, Volume 21, Issue 15, p. 658 –659
- DOI: 10.1049/el:19850467
- Type: Article
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The spectral linewidth of 1.5 μm external cavity semiconductor lasers is investigated. For nonzero intermediate facet reflectivity, detuning from exact resonance is found to reduce linewidths substantially for strong, frequency-selective feedback. A 10 cm cavity gives linewidths below 1 kHz, while coherent systems requirements will be met by cavities under 2.5 cm.
Analysis of open systems interconnection transport protocol standard
- Author(s): M.Y. Bearman ; M.C. Wilbur-Ham ; J. Billington
- Source: Electronics Letters, Volume 21, Issue 15, p. 659 –661
- DOI: 10.1049/el:19850468
- Type: Article
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The ‘Open systems interconnection transport protocol’ will soon become an international standard. The letter presents a number of problems with this protocol and gives guidelines to help implemented overcome the problems.
Erratum: Easy calculation of power spectra for multi-h phase-coded signals
- Author(s): M. Luise
- Source: Electronics Letters, Volume 21, Issue 15, page: 661 –661
- DOI: 10.1049/el:19850469
- Type: Article
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