Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 20, Issue 9, 26 April 1984
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Volume 20, Issue 9
26 April 1984
Magnetically tunable wideband magnetostatic-surface-wave filter using Ga-YIG film
- Author(s): N.S. Chang
- Source: Electronics Letters, Volume 20, Issue 9, p. 357 –358
- DOI: 10.1049/el:19840244
- Type: Article
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The characteristics of a magnetically tunable wideband filter utilising the property of a pass bandwidth of magnetostatic surface waves (MSSW) are given. The pass bandwidths of MSSW obtained experimentally through the Ga-YIG slab having the saturation magnetisation, 1100 Gs and the ordinary transducers consisting of wire antenna vary from 230 to 55 MHz for the operation frequency, 1 to 8 GHz, corresponding to the external static magnetic field. These results could fully be explained by the theory. Loaded Q values of this filter vary from 20 to 270 at the same frequency range as above.
Radiative and nonradiative lifetimes in n-type and p-type 1.6 μm InGaAs
- Author(s): C.H. Henry ; R.A. Logan ; F.R. Merritt ; C.G. Bethea
- Source: Electronics Letters, Volume 20, Issue 9, p. 358 –359
- DOI: 10.1049/el:19840245
- Type: Article
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–359
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Radiative and nonradiative lifetimes were deduced from measurements of lifetime and efficiency in 1.6 μm InGaAs double-heterostructure active layers. The nonradiative rate is interpreted as due to the Auger effect. We find that the dominant Auger rate involves holes. This Auger rate increases with wavelength, accounting for the decrease in the temperature coefficient T0 with wavelength in InGaAsP material.
0.7 W single-drift GaAs IMPATT diodes for millimetre-wave frequencies
- Author(s): X. Zhang and J. Freyer
- Source: Electronics Letters, Volume 20, Issue 9, p. 359 –360
- DOI: 10.1049/el:19840246
- Type: Article
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p.
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–360
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Single-drift flat-profile GaAs IMPATT diodes with diamond heat sinks have been fabricated in the 50 GHz band. The design of the diodes is based on a lower value of effective saturated drift velocity of electrons at high electric fields. Output power as high as 0.7 W at 53 GHz and an efficiency of 12.3% at 51 GHz have been obtained.
OTDR in single-mode fibre at 1.5 μm using homodyne detection
- Author(s): P. Healey ; R.C. Booth ; B.E. Daymond-John ; B.K. Nayar
- Source: Electronics Letters, Volume 20, Issue 9, p. 360 –362
- DOI: 10.1049/el:19840247
- Type: Article
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The letter reports on the first application of homodyne detection to optical time-domain reflectometry (OTDR) in single-mode fibres at a wavelength of 1.52 μm. A number of important differences to heterodyne detection are discussed, and the integration of the discrete optical components considered.
Cutoff in single-mode optical fibre couplers
- Author(s): J.D. Love and A. Ankiewicz
- Source: Electronics Letters, Volume 20, Issue 9, p. 362 –363
- DOI: 10.1049/el:19840248
- Type: Article
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p.
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–363
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Optical coupling, or crosstalk, between two parallel, identical, single-mode fibres is describable as a superposition or the ψ+ and ψ− modes of the composite waveguide. Perturbation theory gives ψ+ and ψ− as the sum and difference, respectively, of the fundamental modes ψ1 and ψ2 of each fibre. In reality ψ+ is the fundamental mode of the composite waveguide, whereas ψ− is the second mode and has a finite cutoff. This limits the smallest V-value for which low-loss coupling is possible. Exact values and approximate analytical expressions for cutoff are presented and compared with experiment. The limitation is least severe for step-profile fibres.
InAsxP1−x/InP photodiodes prepared by molecular-beam epitaxy
- Author(s): T.P. Lee ; C.A. Burrus ; W.B. Sessa ; W.T. Tsang
- Source: Electronics Letters, Volume 20, Issue 9, p. 363 –364
- DOI: 10.1049/el:19840249
- Type: Article
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p.
363
–364
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Photodiodes have been made in epitaxial layers of InAsxP1−x grown by molecular-beam epitaxy on InP substrates The As-P ratio of this material system can be adjusted to produce photodetectors for the 2–3 μm-wavelength region. Initial devices exhibit cutoff wavelengths as long as 2 μm.
Active stabilisation of polarisation on a single-mode fibre
- Author(s): P. Granestrand and L. Thylén
- Source: Electronics Letters, Volume 20, Issue 9, p. 365 –366
- DOI: 10.1049/el:19840250
- Type: Article
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p.
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–366
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We report on a practical method for stabilising the state of polarisation on a single-mode fibre exhibiting a 100% degree of polarisation. The principle of operation is reviewed, as are the practical implementation aspects and experimental results for polarisation stabilisation with a 1.3 μm-wavelength laser diode.
Novel active compensated weighted summer
- Author(s): A.M. Soliman
- Source: Electronics Letters, Volume 20, Issue 9, p. 366 –367
- DOI: 10.1049/el:19840251
- Type: Article
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A new active compensated generalised weighted summer is given. The compensation is achieved by using two extra operational amplifiers and six resistors. The proposed summer has negligible phase and magnitude errors over an extended frequency range. The design equations are given and the tuning procedure is discussed.
Comment: Extended calibration aid for six-port network analysers
- Author(s): P.I. Somlo and J.D. Hunter
- Source: Electronics Letters, Volume 20, Issue 9, p. 367 –368
- DOI: 10.1049/el:19840252
- Type: Article
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Reply: Extended calibration aid for six-port network analysers
- Author(s): C.M. Snowden and C.M. Potter
- Source: Electronics Letters, Volume 20, Issue 9, page: 368 –368
- DOI: 10.1049/el:19840253
- Type: Article
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Pseudo-heterodyne detection scheme for the fibre gyroscope
- Author(s): A.D. Kersey ; A.C. Lewin ; D.A. Jackson
- Source: Electronics Letters, Volume 20, Issue 9, p. 368 –370
- DOI: 10.1049/el:19840254
- Type: Article
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The results of a preliminary investigation of a phase-swept pseudo-heterodyne scheme suitable for use with all-fibre versions of the fibre gyroscope are presented. The output carrier, which is phase-modulated by the Sagnac shift, is generated by employing a sinusoidal phase modulation via a piezoelectric fibre stretcher in combination with selective detector gating
Injection-locking technique applied to a 170 km transmission experiment at 445.8 Mbit/s
- Author(s): H. Toba ; Y. Kobayashi ; K. Yanagimoto ; H. Nagai ; M. Nakahara
- Source: Electronics Letters, Volume 20, Issue 9, p. 370 –371
- DOI: 10.1049/el:19840255
- Type: Article
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Transmission with a BER less than 10−11 has been achieved using an injection-locking technique with a 445.8 Mbit/s RZ signal over a 170 km single-mode fibre. The injection-locking technique provides a single-longitudinal-mode optical source with a 35 dB main/side-mode power ratio and a 1.5 GHz spectral width.
Transient annealing of modulation-doped GaAs/AlxGa1−xAs heterostructures
- Author(s): T. Henderson ; P. Pearah ; H. Morkoç ; B. Nilsson
- Source: Electronics Letters, Volume 20, Issue 9, p. 371 –373
- DOI: 10.1049/el:19840256
- Type: Article
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p.
371
–373
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The effects of transient annealing on modulation-doped heterostructures at temperatures between 750 and 900°C have been studied for eventual application to self aligned ion-implanted FETs. Transient annealing at 800°C, the minimum temperature necessary for sufficient ion implant activation, decreases mobility and interface electron density (̃ 10i2 cm−2) by <5+ and <2+, respectively. This should permit high-speed device application far exceeding the current state-of-the-art.
Multiplication-dependent frequency responses of InP/InGaAs avalanche photodiode
- Author(s): K. Yasuda ; T. Mikawa ; Y. Kishi ; T. Kaneda
- Source: Electronics Letters, Volume 20, Issue 9, p. 373 –374
- DOI: 10.1049/el:19840257
- Type: Article
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–374
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The intrinsic response time of InP/InGaAs APD has been reported. The multiplication factor dependent frequency responses were measured up to multiplication factor of 24. The results show the gain bandwidth of InP/InGaAs APDs is 10 GHz, and the intrinsic response time to be 16 ps.
Low-threshold InGaAsP/InGaP lasers at 810 nm grown on GaAs substrate by LPE
- Author(s): K. Wakao ; H. Nishi ; S. Isozumi ; S. Ohsaka ; T. Kusunoki ; I. Ushijima
- Source: Electronics Letters, Volume 20, Issue 9, p. 374 –375
- DOI: 10.1049/el:19840258
- Type: Article
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–375
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InGaAsP/InGaP double-heterostructure lasers emitting at 810 nm have been fabricated on GaAs substrates using liquid-phase epitaxy (LPE). A threshold current as low as 2.0 kA/cm2 with an external differential quantum efficiency of 54% is obtained. Thus it has been shown that high-quality InGaAsP/InGaP lasers can be obtained by LPE growth.
Growth of CuInS2 single crystals by THM
- Author(s): H.J. Hsu ; C.Y. Sun ; H.L. Hwang
- Source: Electronics Letters, Volume 20, Issue 9, page: 376 –376
- DOI: 10.1049/el:19840259
- Type: Article
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The letter describes the use of THM in the growth of CuInS2 single crystals. This work demonstrates the feasibility of growing large single crystals of certain I-III-VI2 compounds.
Reduction of backgating in GaAs/AlGaAs MESFETs by optimisation of active-layer/buffer-layer interface
- Author(s): D. Arnold ; R. Fischer ; J. Klem ; F. Ponse ; H. Morkoç
- Source: Electronics Letters, Volume 20, Issue 9, p. 376 –378
- DOI: 10.1049/el:19840260
- Type: Article
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Backgating measurements made on GaAs MESFETs with abrupt, graded alloy and graded superlattice interface AlGaAs buffer layers were compared to measurements made on conventional GaAs buffer-layer MESFETs. Only the superlattice interface structure showed a reduction in the backgating transconductance (by a factor of 24 compared to the GaAs buffer-layer FET). The lack of reduction in the backgating transconductance for the abrupt and graded alloy interface devices is attributed to traps resulting from GaAs growth on an AlGaAs layer.
InP mixer diodes with etched via ohmic contacts
- Author(s): A. Christou ; J.E. Davey ; W.F. Tseng ; M.L. Bark
- Source: Electronics Letters, Volume 20, Issue 9, p. 378 –379
- DOI: 10.1049/el:19840261
- Type: Article
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p.
378
–379
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InP mixer diodes processed with Ag/TiW/Au Schottky diodes have exhibited a noise figure of 6.5–7.0 dB at 94 GHz. InP surface preparation is shown to be critical in diode performance. An indium-stabilised surface has resulted in a barrier height of 0.45 eV.
Microwave detection of hidden objects in walls
- Author(s): A.Z. Botros ; A.D. Olver ; L.G. Cuthbert ; G. Farmer
- Source: Electronics Letters, Volume 20, Issue 9, p. 379 –380
- DOI: 10.1049/el:19840262
- Type: Article
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p.
379
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A short-distance FMCW radar system is described which has been used to detect the presence of objects embedded in brick walls. Digital signal processing and microprocessor control are used to enhance the detection sensitivity by a subtraction process. The system has detected small air-filled cavities and metal rods in brick walls.
Inversion of radiometric data from biological tissue by an optimisation method
- Author(s): G. Schaller
- Source: Electronics Letters, Volume 20, Issue 9, p. 380 –382
- DOI: 10.1049/el:19840263
- Type: Article
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p.
380
–382
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The temperature profile in the depth of a biological tissue is reconstructed from multispectral microwave radiometric data using an optimisation strategy. Starting from a simplified model with an assumed temperature distribution, radiometric data for different frequencies (skin depths) are computed. After adding ‘measurement noise’, this computer-simulated data set is then inverted by the pattern-search strategy to yield a reconstructed temperature profile.
Phase comparison monopulse radar: statistics of phase error
- Author(s): J.H. Roberts
- Source: Electronics Letters, Volume 20, Issue 9, p. 382 –383
- DOI: 10.1049/el:19840264
- Type: Article
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p.
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The letter presents a simple single integral that specifies the probability distribution of the angular error introduced by the presence of Gaussian noise on the sum and difference beams of a phase comparison monopulse radar.
Fabrication of GaAlAs ‘window-stripe’ multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying
- Author(s): Y. Suzuki ; Y. Horikoshi ; M. Kobayashi ; H. Okamoto
- Source: Electronics Letters, Volume 20, Issue 9, p. 383 –384
- DOI: 10.1049/el:19840265
- Type: Article
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By utilising Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three times in the ultimate output power was achieved as compared with an MQW laser without window.
High-speed pulse generation using a sinusoidally driven Ti:LiNbO3 directional coupler travelling-wave optical modulator
- Author(s): S.K. Korotky ; R.C. Alferness ; L.L. Buhl ; C.H. Joyner ; E.A.J. Marcatili
- Source: Electronics Letters, Volume 20, Issue 9, p. 384 –386
- DOI: 10.1049/el:19840266
- Type: Article
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p.
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We report the generation of 47 ps (FWHM) optical pulses at a 5 Gbit/s repetition rate using a sinusoidally driven Ti-LiNbO3 directional coupler modulator with travelling-wave electrodes By selective DC bias of the switch, these pulses are obtained without overdriving and without velocity matching of the electrical and optical waves.
Public key distribution in matrix rings
- Author(s): R.W.K. Odoni ; V. Varadharajan ; P.W. Sanders
- Source: Electronics Letters, Volume 20, Issue 9, p. 386 –387
- DOI: 10.1049/el:19840267
- Type: Article
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An extension of the Diffie-Hellman public key distribution system to matrix rings is described. Using rings of non-singular matrices over Z/pZ and upper triangular matrices with invertible elements along the diagonal over Z/pZ, it is shown that the number of possible secret keys is much greater for a given prime p compared to the original system. An outline of a method to construct the base matrix used in the system is given.
Erratum: Tractable form of the dyadic Green function for application to multilayered isotropic media
- Author(s): T. Sphicopoulos ; V. Teodoridis ; F. Gardiol
- Source: Electronics Letters, Volume 20, Issue 9, page: 387 –387
- DOI: 10.1049/el:19840268
- Type: Article
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