Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 20, Issue 10, 10 May 1984
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Volume 20, Issue 10
10 May 1984
Eigenvalues of TE11- and TM11-modes in conical horn antennas
- Author(s): E. Lier
- Source: Electronics Letters, Volume 20, Issue 10, p. 389 –390
- DOI: 10.1049/el:19840269
- Type: Article
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p.
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–390
(2)
Approximate closed-form expression for the eigenvalues of TE11- and TM11-modes in conical waveguides have been developed. The accuracy of these expressions is a function of the flare angle of the horn, being in excellent agreement with exact values.
Optical loss measurement results on an experimental optical fibre submarine cable of 30 km length
- Author(s): M. Nunokawa ; K. Mochizuki ; Y. Namihira ; M. Kuwazuru ; H. Yamamoto
- Source: Electronics Letters, Volume 20, Issue 10, p. 390 –391
- DOI: 10.1049/el:19840270
- Type: Article
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p.
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–391
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A continuous length of 30 km optical fibre submarine cable was successfully manufactured and laid on the sea bed about 1000 m deep. After the sea trial of 17 months, the cable was recovered from the sea bed. No significant degradation was observed in the optical loss of the recovered cable.
1.5 μm phase adjusted active distributed reflector laser for complete dynamic single-mode operation
- Author(s): F. Koyama ; Y. Suematsu ; K. Kojima ; K. Furuya
- Source: Electronics Letters, Volume 20, Issue 10, p. 391 –393
- DOI: 10.1049/el:19840271
- Type: Article
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p.
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–393
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1.5 μm GaInAsP/InP phase adjusted active distributed reflector laser was proposed and fabricated for stable dynamic single-mode operation. Room-temperature CW operation was obtained with the threshold current of 62 mA. Oscillation at the Bragg wavelength was confirmed experimentally.
High-frequency small-signal modulation characteristics of short-cavity InGaAsP lasers
- Author(s): R.S. Tucker ; Chinlon Lin ; C.A. Burrus ; P. Besomi ; R.J. Nelson
- Source: Electronics Letters, Volume 20, Issue 10, p. 393 –394
- DOI: 10.1049/el:19840272
- Type: Article
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–394
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Measured small-signal frequency-response characteristics of directly modulated long-cavity and short-cavity InGaAsP double-channel buried-heterostructure (DCBH) lasers are reported. Relaxation oscillation resonance frequencies as high as 9.4 GHz at a bias current of twice threshold have been obtained with short-cavity devices.
Measurement of drift mobility and carrier density profiles in In0.53Ga0.47As long-gate JFETs
- Author(s): H. Albrecht and C. Lauterbach
- Source: Electronics Letters, Volume 20, Issue 10, p. 394 –395
- DOI: 10.1049/el:19840273
- Type: Article
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p.
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–395
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Measurements of the drift mobility profile and the carrier density profile in LPE-In0.53Ga0.47As channel of InGaAs/InP:Fe JFETs with a gate length of 100 μm are reported. Nearly flat profiles of drift mobility on channel depth with maximum values of 7500 cm2/Vs at a net carrier density of 1.5×1016 cm−3 were realised.
2 Gbit/s operation of single-longitudinal-mode 1.5 μm double-channel planar buried-heterostructure C3 lasers
- Author(s): N.A. Olsson ; N.K. Dutta ; P. Besomi ; T.-M. Shen ; R.J. Nelson ; R.A. Linke ; R.S. Tucker
- Source: Electronics Letters, Volume 20, Issue 10, p. 395 –397
- DOI: 10.1049/el:19840274
- Type: Article
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395
–397
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High-speed operation of cleaved coupled cavity (C3) lasers made from double-channel planar buried-heterostructure (DCPBH) lasers operating at 1.5 μm wavelength is reported. Error-free (error rate<10−11/s) operation through a spectrometer at a data rate of 2 Gbit/s and with large on-off and mode rejection ratios is demonstrated. Small-signal bandwidth measurements indicate possible operation of these lasers up to about 4 Gbit/s.
Screening method for laser diodes with high reliability
- Author(s): Y. Nakano ; G. Iwane ; T. Ikegami
- Source: Electronics Letters, Volume 20, Issue 10, p. 397 –398
- DOI: 10.1049/el:19840275
- Type: Article
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p.
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–398
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Selection after aging for a few thousand hours at 70°C, following an initial hard screening, is proposed as a practical way to pick up reliable devices for undersea transmission systems.
Finite cladding effects in highly birefringent fibre taper-polarisers
- Author(s): F. De Fornel ; M.P. Varnham ; D.N. Payne
- Source: Electronics Letters, Volume 20, Issue 10, p. 398 –399
- DOI: 10.1049/el:19840276
- Type: Article
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p.
398
–399
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Experimental results show that the refractive index of the outside medium affects the performance of fibre polarisers made by tapering high-birefringent bow-tie fibres. Both narrowband and wideband polarisers have been constructed having extinction ratios of 35 and 26 dB, respectively.
Fibre gyroscope with passive quadrature detection
- Author(s): D.A. Jackson ; A.D. Kersey ; A.C. Lewin
- Source: Electronics Letters, Volume 20, Issue 10, p. 399 –401
- DOI: 10.1049/el:19840277
- Type: Article
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p.
399
–401
(3)
A novel configuration for the optical fibre gyroscope is described which utilises highly birefringent fibre and polarisation mode selection to achieve a stable π/2 bias. By operating the system using a combination of both the unbiased and π/2 biased Sagnac outputs, the possibility of wide dynamic range operation is realised.
Fault location for nonlinear resistive circuits
- Author(s): J. Rutkowski and A. Macura
- Source: Electronics Letters, Volume 20, Issue 10, p. 401 –403
- DOI: 10.1049/el:19840278
- Type: Article
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p.
401
–403
(3)
The letter deals with fault location in nonlinear resistive circuits taking the design tolerances of the nonfaulty circuit parameters into consideration. The method described is based on measurements of node voltages at a single test. It belongs to the class of topological methods, and two-terminal as well as m-terminal elements are permitted.
Bandwidth-limiting effects in coherent optical communications systems based on polarisation-preserving fibres
- Author(s): C.J. Nielsen
- Source: Electronics Letters, Volume 20, Issue 10, p. 403 –405
- DOI: 10.1049/el:19840279
- Type: Article
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p.
403
–405
(3)
Interference effects caused by small polarisation misalignments are shown to produce a significant nonlinear distortion of a coherent analogue FM signal transmitted via polarisation-preserving fibres. High-quality transmission of a 100 MHz sinusoidal signal over 10 km of fibre requires alignment accuracies of output and input polarisers better than 2.5 degrees.
Statistical simulation of circuits using interpolation polynomials
- Author(s): R. Amador and R. López
- Source: Electronics Letters, Volume 20, Issue 10, p. 405 –406
- DOI: 10.1049/el:19840280
- Type: Article
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p.
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–406
(2)
It is shown that interpolation multivariate polynomials can be conveniently used to perform statistical simulation of circuits. This method can save computer time in Monte Carlo runs. A voltage series regulator and a TV sweep generator have been studied.
Accurate analytical method for the extraction of solar cell model parameters
- Author(s): J.C.H. Phang ; D.S.H. Chan ; J.R. Phillips
- Source: Electronics Letters, Volume 20, Issue 10, p. 406 –408
- DOI: 10.1049/el:19840281
- Type: Article
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p.
406
–408
(3)
Analytical expressions are derived for the rapid extraction of solar cell single diode model parameters from experimental data. The resulting parameter values are shown to have less than 5% error for most solar cells
In-the-lens secondary electron analyser for IC internal voltage measurements with electron beams
- Author(s): E. Menzel and R. Buchanan
- Source: Electronics Letters, Volume 20, Issue 10, p. 408 –409
- DOI: 10.1049/el:19840282
- Type: Article
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p.
408
–409
(2)
A new analyser scheme for voltage measurements on integrated circuits is described. The analyser is built into the objective lens of a scanning electron microscope. It features small working distances, high voltage resolution capability, high transmission, and reduced sensitivity to measurement errors.
Vectorial finite-element method without spurious solutions for dielectric waveguide problems
- Author(s): M. Koshiba ; K. Hayata ; M. Suzuki
- Source: Electronics Letters, Volume 20, Issue 10, p. 409 –410
- DOI: 10.1049/el:19840283
- Type: Article
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p.
409
–410
(2)
A new vectorial finite-element method for the analysis of dielectric waveguide problems is formulated in terms of all three components of the magnetic field H. In this approach, the relation div H = 0 is satisfied and the spurious non-physical solutions do not appear.
Sensitivity reduction in a digital lattice filter
- Author(s): A. Nishihara
- Source: Electronics Letters, Volume 20, Issue 10, p. 410 –411
- DOI: 10.1049/el:19840284
- Type: Article
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p.
410
–411
(2)
A modification is proposed in the design of the Gray-Markel lattice filter. When a k-parameter is close to 1 in magnitude, this modification reduces the sensitivity with respect to the parameter. Both the number of arithmetic operations and the roundoff noise are identical to those of the original filter.
Log-periodic flat short-circuited dipole array with a squinted beam
- Author(s): G. Dubost ; S. Gueho ; A. Bizouard
- Source: Electronics Letters, Volume 20, Issue 10, p. 411 –413
- DOI: 10.1049/el:19840285
- Type: Article
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p.
411
–413
(3)
A new class of microstrip travelling wave antenna of large bandwidth is described. The log-periodic array is composed of flat short-circuited half dipoles acting at quarter-wave resonance and fed in series by means of a high characteristic impedance microstrip line. A model has been constructed and tested. A large squinted main beam is obtained between 0.75 and 4.5 GHz. The constant experimental radioelectric properties are in good agreement with the theoretical predictions.
Evaluation of translinear logic
- Author(s): A.J. Kemp
- Source: Electronics Letters, Volume 20, Issue 10, p. 413 –414
- DOI: 10.1049/el:19840286
- Type: Article
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p.
413
–414
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Translinear logic (TLL) has been characterised and compared with integrated Schottky logic (ISL) and emitter-coupled logic (ECL) under the same processing conditions, It was found that TLL had a similar speed and power performance as ECL with a packing density similar to that of ISL, but due to a nonideal transfer characteristic it cannot be used in complex applications.
Adjacent wavelength interference effects on optical fibre systems error rates
- Author(s): P. Chan ; S.J. Chua ; T.T. Tjhung
- Source: Electronics Letters, Volume 20, Issue 10, p. 414 –416
- DOI: 10.1049/el:19840287
- Type: Article
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p.
414
–416
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Bit error rates due to adjacent wavelength interference for wavelength division multiplexed signals are analysed. Results are presented for synchronised and staggered bit streams. The bit error rates compared to single wavelength detection are significantly larger unless the relative quantum efficiency of the photodetector at the two wavelengths is less than 10−4.
Oscillation frequency shift suppression of semiconductor lasers coupled to external cavity
- Author(s): T. Fujita ; J. Ohya ; S. Ishizuka ; K. Fujito ; H. Sato
- Source: Electronics Letters, Volume 20, Issue 10, p. 416 –417
- DOI: 10.1049/el:19840288
- Type: Article
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p.
416
–417
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External cavity coupled semiconductor lasers are theoretically analysed for the suppression of oscillation frequency shift caused by current modulation and temperature change. The results indicate that strong optical feedback, AR-coating of laser facet and large ratio of passive/active cavity length are effective for the frequency shift suppression.
High-temperature operation of 1.55 μm InGaAsP double-channel buried-heterostructure lasers grown by LPE
- Author(s): P. Besomi ; R.B. Wilson ; R.L. Brown ; N.K. Dutta ; P.D. Wright ; R.J. Nelson
- Source: Electronics Letters, Volume 20, Issue 10, p. 417 –419
- DOI: 10.1049/el:19840289
- Type: Article
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p.
417
–419
(3)
High-temperature operation of InGaAsP double-channel buried-heterostructure (DCBH) lasers emitting at 1.55 μm is reported. The 1.55 μm InGaAsP DCBH lasers have threshold currents as low as 18 mA at 20°C. The threshold current temperature sensitivity between 10°C and 75°C is characterised by a T0 value of 55–66 K. Electro-optical derivative measurements show that the 1.55 μm InGaAsP DCBH laser does not have substantial above-threshold leakage current for junction temperatures as high as 75°C. Finally, these devices were operated at temperatures as high as 110°C, the highest CW operating temperature obtained to date for a 1.55 μm InGaAsP laser.
Comparison of circular and linear polarisation radar measurements on the melting layer
- Author(s): A. Hendry and Y.M.M. Antar
- Source: Electronics Letters, Volume 20, Issue 10, p. 419 –420
- DOI: 10.1049/el:19840290
- Type: Article
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p.
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–420
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Dual-polarisation radar measurements of the melting layer taken with both linear and circular polarisations are reported. Good agreement is shown between the differential reflectivity measured with linear polarisations and the corresponding quantity calculated from the circular polarisation measurement. The low degree of preferred orientation in the melting layer is shown to be consistent with the observed differential reflectivity values.
Pulsed oscillation of GaAlAs/GaAs surface-emitting injection laser
- Author(s): A. Ibaraki ; S. Ishikawa ; S. Ohkouchi ; K. Iga
- Source: Electronics Letters, Volume 20, Issue 10, p. 420 –422
- DOI: 10.1049/el:19840291
- Type: Article
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p.
420
–422
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We report the fabrication and lasing properties of the first GaAlAs/GaAs surface-emitting injection laser. The threshold current was 330 mA for 20 μmø electrode at 77 K under pulsed conditions (λ = 7960 Å). In some devices we achieved room temperature pulsed oscillation.
Parallel-to-serial transformation by using large-cell-size amorphous-silicon charge-coupled devices
- Author(s): Y. Uchida ; S. Kishida ; M. Matsumura
- Source: Electronics Letters, Volume 20, Issue 10, p. 422 –423
- DOI: 10.1049/el:19840292
- Type: Article
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p.
422
–423
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An 8 bit/mm amorphous-silicon charge-coupled device of resistive gate structure and amorphous-silicon transistors has been integrated in monolithic form. The device operated at 10 kHz with a transfer efficiency of more than 99.4% per transfer. Parallel signals applied from external terminals have been transferred to cells in the charge-coupled device under the control of transistors, and have been detected as serial signals at the output terminal of the charge-coupled device.
Low-dispersion single-mode silica fibre with undoped core and three F-doped claddings
- Author(s): H. Etzkorn and W.E. Heinlein
- Source: Electronics Letters, Volume 20, Issue 10, p. 423 –424
- DOI: 10.1049/el:19840293
- Type: Article
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p.
423
–424
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The refractive-index profile of an ideal single-mode silica fibre with undoped core and three F-doped claddings was optimised by calculation to realise two zeros of the chromatic dispersion at 1.30 and 1.55 μm where the spectral loss has its local and absolute minima, respectively. The sensitivity of the chromatic dispersion due to different scale factors for the radial co-ordinate of the refractive-index profile is considered.
Optical frequency stabilisation of high-power laser diodes under modulation using short optical waveguides
- Author(s): W.E. Stephens ; T.R. Joseph ; T. Findakly ; Bor-Uei Chen
- Source: Electronics Letters, Volume 20, Issue 10, p. 424 –426
- DOI: 10.1049/el:19840294
- Type: Article
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p.
424
–426
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A waveguide stabilised laser diode (WSLD) demonstrated high-power single optical frequency operation under both CW and modulated conditions. This device consisted of an AlGaAs CSP laser coupled to an external cavity constructed from a 200 μm-long single-mode ion-exchange waveguide. With an average optical power of 9 mW, the WSLD demonstrated a side-mode suppression ratio greater than 570:1 under CW conditions and greater than 310:1 under modulation with a modulation index of greater than 0.95 at 250 MHz.
Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation
- Author(s): W Skorupa ; U. Kreissig ; E. Hensel ; H. Bartsch
- Source: Electronics Letters, Volume 20, Issue 10, p. 426 –427
- DOI: 10.1049/el:19840295
- Type: Article
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p.
426
–427
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Carrier lifetimes were measured in epitaxial silicon layers deposited on buried silicon nitride produced by high-dose nitrogen implantation at 330 keV. The values were in the range 20–200 μs. The results are remarkable taking into account the high density of crystal defects in the epitaxial layers. Comparing with other SOI technologies the measured lifetimes are higher by 1–2 orders of magnitude.
Simultaneous rain attenuation observations in the three Sirio Italian stations: statistical results after five years' activity
- Author(s): J.P.V. Poiares Baptista
- Source: Electronics Letters, Volume 20, Issue 10, p. 427 –429
- DOI: 10.1049/el:19840296
- Type: Article
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–429
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The simultaneity of rain attenuation experienced by very distant Earth terminals was recently recognised as an important topic to be investigated in view of future planning of advanced satellite systems using a common on-board resource (extra on-board power, steerable spot beams, burst length control etc.). Results obtained from the analysis of simultaneous fadings at 11.6 GHz, during the SIRIO SHF experiment, by the three Italian earth stations are presented here and briefly discussed.
All-PANDA-fibre gyroscope with long-term stability
- Author(s): K. Okamoto ; K. Takada ; M. Kawachi ; J. Noda
- Source: Electronics Letters, Volume 20, Issue 10, p. 429 –430
- DOI: 10.1049/el:19840297
- Type: Article
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p.
429
–430
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A new all-PANDA-fibre gyroscope is reported. All components such as the coil, the phase modulator, the 3 dB coupler and the polariser were constructed by the PANDA fibres. The extinction ratio of the fibre-type polariser was 43 dB, with the insertion loss smaller than 0.04 dB when the fibre was bent by the radius R = 10 cm. For long-term behaviour, the peak-to-peak fluctuation of 0.5 deg/h was observed with 40 s integration time
Accurate localisation of thermal gradients in lossy materials by correlation microwave thermography
- Author(s): L. Bellarbi ; A. Mamouni ; J.C. van de Velde ; V. Leroy
- Source: Electronics Letters, Volume 20, Issue 10, p. 430 –431
- DOI: 10.1049/el:19840298
- Type: Article
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p.
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–431
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Correlation microwave thermography is able to bring new information about the geometry of thermal structures located in lossy materials. As an example, an experiment carried out in water points to the possibility of the location of a lateral thermal gradient with an accuracy of nearly one millimetre.
Unity-gain frequency-independent quadrature phase shifter
- Author(s): E.W. Tay and V.G.K. Murti
- Source: Electronics Letters, Volume 20, Issue 10, p. 431 –432
- DOI: 10.1049/el:19840299
- Type: Article
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p.
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–432
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An active circuit which simultaneously provides unity gain and a Constant phase shift of 90° for sinusoidal inputs of varying frequency is described. It employs the voltage derived from a quadrature detector to modify the resistance of a voltage-controlled resistor incorporated in an active allpass phase shifter circuit.
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