Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 19, Issue 4, 17 February 1983
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Volume 19, Issue 4
17 February 1983
Optical-fibre unit for optical submarine cable
- Author(s): H. Yamamoto ; Y. Namihira ; Y. Niiro
- Source: Electronics Letters, Volume 19, Issue 4, p. 125 –126
- DOI: 10.1049/el:19830088
- Type: Article
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An optical-fibre unit with a strain-relaxing effect is proposed for realising a highly reliable optical-fibre submarine cable. The basic design of the new type of optical-fibre unit means that optical fibres are not subjected to the same strain as the fibre unit directly when the unit is elongated. The test result of the strain-relaxing effect of an experimental optical-fibre unit was about 0.2%, and optical fibres returned to the original position in the fibre unit after the tension was released.
Application of modified Ebers-Moll model to nonlinear distortion analysis of transistor amplifiers
- Author(s): H. Kuntman
- Source: Electronics Letters, Volume 19, Issue 4, p. 126 –127
- DOI: 10.1049/el:19830089
- Type: Article
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Application of the modified Ebers-Moll model to low-frequency nonlinear harmonic distortion analysis of transistor amplifiers is discussed. The calculated values for two types of transistor amplifiers are compared with measured values and are found to be in good agreement. Therefore the model can be used in design of low-distortion audio amplifiers.
Molecular beam epitaxial double heterojunction bipolar transistors with high current gains
- Author(s): S.L. Su ; W.G. Lyons ; O. Tejayadi ; R. Fischer ; W. Kopp ; H. Morkoç ; W. McLevige ; H.T. Yuan
- Source: Electronics Letters, Volume 19, Issue 4, p. 128 –129
- DOI: 10.1049/el:19830090
- Type: Article
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Double heterojunction Al0.35Ga0.65As/GaAs bipolar junction transistors (DHBJTs) grown by molecular beam epitaxy (MBE) were fabricated and tested. Devices with 2000 Å and 500 Å base widths exhibited common emitter current gains of about 325 and 500, respectively, in a wide range of base and collector currents. The use of such high Al mole fraction and double heterojunctions placed stringent requirements on the growth parameter which had to be optimised and controlled very precisely to obtain such high current gains. These current gains compare with the previous best value of 120 obtained in a molecular beam epitaxial single heterojunction bipolar transistor having a 500 Å-thick base region.
Long-term precipitation rate statistics for north-east of Spain
- Author(s): M. Puigcerver ; S. Alonso ; J. Lorente ; E. Vilar
- Source: Electronics Letters, Volume 19, Issue 4, p. 129 –130
- DOI: 10.1049/el:19830091
- Type: Article
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Precipitation rates recorded in Barcelona, Spain, over a 20 year period have been processed, and the average annual cumulative distribution is presented. This distribution reflects the meteorological conditions for the North-East of Spain and agrees well with statistics obtained for certain parts of the North of Italy and Greece. The average worst-month distribution is also presented and is related to the annual statistics.
Inverse scattering solutions of scalar Helmholtz wave equation by a multiple source moment method
- Author(s): S.A. Johnson ; Yoon Tae-Hoon ; Ra Jung-Woong
- Source: Electronics Letters, Volume 19, Issue 4, p. 130 –132
- DOI: 10.1049/el:19830092
- Type: Article
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Determining the spatial scattering function, i.e. solving the inverse scattering problem, with the Helmholtz wave equation model is known to be an ill posed problem for a single incident radiation field. We show that the problem becomes well posed if formulated as seeking the common scattering function which produces a best prediction of the given scattering data for sufficiently many sources and receivers. The scattering function is found by solution of a system of non-linear algebraic equations which are derived by the method of moments. Our method avoids perturbation theory approximations.
Enhanced bandgap resonant nonlinear susceptibility in quantum-well heterostructures
- Author(s): M.G. Burt
- Source: Electronics Letters, Volume 19, Issue 4, p. 132 –133
- DOI: 10.1049/el:19830093
- Type: Article
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Calculation shows that the bandgap resonant nonlinear susceptibility in a multi-quantum-well structure can be a factor of approximately 2 greater than in the bulk. The calculation uses the mechanism of blocking of band-to-band transitions, likely to be present in materials of interest for advanced optical-fibre communication systems.
Liquid-core optical fibre for voltage measurement using Kerr effect
- Author(s): M. Kuribara and Y. Takeda
- Source: Electronics Letters, Volume 19, Issue 4, p. 133 –135
- DOI: 10.1049/el:19830094
- Type: Article
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Liquid-core optical fibre for voltage measurement, based on the Kerr effect, is shown. The measurements are performed for 50 Hz alternating voltage, i.e. for 23–130 kV/m electric fields.
Modes of propagation in slot line with layered substrate containing magnetised ferrite
- Author(s): W. Zieniutycz
- Source: Electronics Letters, Volume 19, Issue 4, p. 135 –136
- DOI: 10.1049/el:19830095
- Type: Article
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Using the singular integral approach the dispersion characteristics of the slot line on a multilayered substrate containing a gyromagnetic medium are calculated. The properties of the modes are then discussed from both the phase constant and attenuation curves.
Theory of FM noise of single-mode injection lasers
- Author(s): R. Schimpe and W. Harth
- Source: Electronics Letters, Volume 19, Issue 4, p. 136 –137
- DOI: 10.1049/el:19830096
- Type: Article
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The FM noise of single-mode injection lasers is studied in terms of the root-mean-square frequency deviation Δfrms against the angular modulation frequency ωm off-carrier. Spontaneous emission causes phase fluctuations of the laser wave. Enhanced FM noise may occur due to radiation-induced fluctuations of the carrier density. The influence of the coupling between laser field and active region on this modulation noise is investigated.
A priori bound for optimal stochastic control problem with multiplicative noise
- Author(s): E. Yaz
- Source: Electronics Letters, Volume 19, Issue 4, p. 137 –139
- DOI: 10.1049/el:19830097
- Type: Article
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An easy-to-evaluate lower bound on the spectral norm of the solution to a nonlinear matrix equation arising in control of linear systems with state and control dependent noise is found. The result enables one to speculate as to the magnitude of the solution matrix.
Carrier lifetimes in silicon epitaxial layers deposited on oxygen-implanted substrates
- Author(s): K. Das ; G.P. Shorthouse ; J.B. Butcher
- Source: Electronics Letters, Volume 19, Issue 4, p. 139 –140
- DOI: 10.1049/el:19830098
- Type: Article
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Carrier lifetimes in silicon epitaxial layers deposited on high-dose oxygen-implanted wafers have been obtained from measurements of diode storage times. A figure of 1.25 μS was obtained for diodes in the implanted area, compared with 1.75 μS for diodes outside the implanted area on the same wafer. This marginal degradation of lifetime indicates that the dielectrically isolated structure should be able to support bipolar and dynamic logic devices.
Analysis of quasicyclic ferrite junction by point-matching technique
- Author(s): J. Mazur
- Source: Electronics Letters, Volume 19, Issue 4, p. 140 –142
- DOI: 10.1049/el:19830099
- Type: Article
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In the letter a field-theory treatment of a new type of nonreciprocal ferrite device, the quasicyclic ferrite junction (QF), is presented. The QF junction utilises properties of the three-port EG-mode circulator in which one edge is short-circuited to the ground plane. The main feature of the junction is mutual isolation between two ports joined by the short-circuited edge. The boundary problem is solved by means of the point-matching technique. Finally, experimental results are carried out to verify the obtained numerical dates.
Fast photoconductive GaAs detectors made by laser stimulated MOCVD
- Author(s): W. Roth ; H. Schumacher ; H. Beneking
- Source: Electronics Letters, Volume 19, Issue 4, p. 142 –143
- DOI: 10.1049/el:19830100
- Type: Article
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Photoconductive detectors with rise times less than 10 ps have been made from GaAs grown by laser-stimulated MOCVD. The growth temperature was 450°C, and laser pulse energy and pulse repetition frequency were 120 mJ and 10 Hz, respectively.
Enhancement of birefringence in polarisation-maintaining fibres by thermal annealing
- Author(s): A. Ourmazd ; R.D. Birch ; M.P. Varnham ; D.N. Payne ; E.J. Tarbox
- Source: Electronics Letters, Volume 19, Issue 4, p. 143 –144
- DOI: 10.1049/el:19830101
- Type: Article
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The thermal behaviour of highly birefringent polarisation-maintaining optical fibres is studied, and the thermal hysteresis of the birefringence is related to the quenching of the fibre. Suitable ‘on-line’ thermal annealing during fibre drawing is shown to be a method for the full development of the high anisotropic stresses potentially available in high birefringence structures using borosilicate stress-producing parts.
PSK homodyne receiver sensitivity measurements at 1.5 μm
- Author(s): D.J. Malyon ; T.G. Hodgkinson ; D.W. Smith ; R.C. Booth ; B.E. Daymond-John
- Source: Electronics Letters, Volume 19, Issue 4, p. 144 –146
- DOI: 10.1049/el:19830102
- Type: Article
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Measurements of the receiver sensitivity for an experimental optical PSK homodyne system, operating at 140 Mbit/s and at a wavelength of 1.52 μm, have given a 19 dB sensitivity improvement over direct detection, and at −64 dBm is approximately 2 dB away from the theoretically predicted value.
CAD broadband matching design
- Author(s): S.K.S. Lu
- Source: Electronics Letters, Volume 19, Issue 4, p. 146 –147
- DOI: 10.1049/el:19830103
- Type: Article
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In this letter, a CAD technique of designing a broadband matching network using the real frequency approach with the equaliser resistance (conductance) expressed in rational function is discussed.
High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation
- Author(s): D. Ankri ; W.J. Schaff ; P. Smith ; L.F. Eastman
- Source: Electronics Letters, Volume 19, Issue 4, p. 147 –149
- DOI: 10.1049/el:19830104
- Type: Article
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GaAlAs-GaAs heterojunction bipolar transistors (HBTs) with an abrupt emitter-base interface have been realised by molecular-beam epitaxy (MBE) on semi-insulating substrates. A gain-bandwidth product FT of 15 GHz has been measured for Ic = 20 mA and VCE = 8 V. These results are the best reported so far for HBTs and are very promising for high-speed logic.
Switched-capacitor second-order noise-shaping coder
- Author(s): G. Lainey ; R. Saintlaurens ; P. Senn
- Source: Electronics Letters, Volume 19, Issue 4, p. 149 –150
- DOI: 10.1049/el:19830105
- Type: Article
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The rapid development of digital processing in the fields of instrumentation, control and communications has generated a good deal of research into simple, easily integrable, high-resolution A/D converters. Given the significant promise such converters offer for future application, a switched-capacitor version of a second-order noise-shaping coder intended for high-resolution conversion has been realised. This coder has been used successfully to produce a PCM signal.
Erratum: Deformation-free overgrowth of InGaAsP DFB corrugations
- Author(s): A.W. Nelson ; L.D. Westbrook ; J.S. Evans
- Source: Electronics Letters, Volume 19, Issue 4, page: 150 –150
- DOI: 10.1049/el:19830106
- Type: Article
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