Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 19, Issue 23, 10 November 1983
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Volume 19, Issue 23
10 November 1983
Distance measure for simplified receivers
- Author(s): A. Svensson ; C.-E. Sundberg ; T. Aulin
- Source: Electronics Letters, Volume 19, Issue 23, p. 953 –954
- DOI: 10.1049/el:19830648
- Type: Article
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A distance measure is derived for simplified coherent receivers for general digital modulation schemes. This measure gives the asymptotic error probability performance on the additive white Gaussian noise channel. It is applied to some simple examples considering phase modulated signals.
Triggering pulse durations in transferred electron devices
- Author(s): T.F. Carruthers and J.F. Weller
- Source: Electronics Letters, Volume 19, Issue 23, p. 955 –956
- DOI: 10.1049/el:19830649
- Type: Article
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Pairs of 1.0 ps optical pulses, each focused onto a different region of a planar GaAs transferred electron device, were separated by a variable delay time τ to initiate and then inhibit dipole domain formation. The minimum pulse durations which could trigger domains were thus observed; the minimum value of τ which generated domains in the device studied was 7 ± 3 ps.
Gaussian pulse propagation in nonlinear optical fibre
- Author(s): P.L. Chu and C. Desem
- Source: Electronics Letters, Volume 19, Issue 23, p. 956 –957
- DOI: 10.1049/el:19830650
- Type: Article
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It is shown that the mutual interaction of Gaussian pulses propagating in a nonlinear optical fibre is much less than that in the case of solitons. Thus a 50% increase in fibre bandwidth is obtained if Gaussian pulses are used instead of solitons.
Effects of wire radius and arm bend on a rectangular spiral antenna
- Author(s): H. Nakano ; J. Yamauchi ; K. Nogami
- Source: Electronics Letters, Volume 19, Issue 23, p. 957 –958
- DOI: 10.1049/el:19830651
- Type: Article
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The input impedance of a rectangular spiral antenna is calculated as a function of wire radius. A value close to 60π Ω is obtained when neighbouring filaments are spaced by nearly the equivalent strip width, although the spiral is not exactly self complementary. When the spiral arm is suitably bent the circularly polarised radiation pattern is widened in one principal plane, while maintaining the inherent input impedance and power gain.
Measuring method of equivalent series capacitance and negative resistance of crystal-oscillator circuits
- Author(s): M. Toki and Y. Tsuzuki
- Source: Electronics Letters, Volume 19, Issue 23, p. 959 –960
- DOI: 10.1049/el:19830652
- Type: Article
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A measuring method has been developed to obtain the input impedance characteristics of crystal-oscillator circuits, so that operation performances such as the frequency range of the oscillator circuit application can be estimated
Relationships for the drift and diffusion components of the drain current in an MOS transistor
- Author(s): C. Turchetti
- Source: Electronics Letters, Volume 19, Issue 23, p. 960 –962
- DOI: 10.1049/el:19830653
- Type: Article
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It is shown that, by taking into account the current-continuity equation, analytical expressions for both the drift and the diffusion components of the drain current in an MOST can be derived. Also, these current components, which can be expressed as a function of the surface potential values at the source and at the drain ends of the channel, are reported against the voltages applied to the device.
Use of a sputtered SiO2 coating for surface protection during ‘leaky tube’ diffusion of Zn into GaAs
- Author(s): J.L. Edwards and R.J. Roedel
- Source: Electronics Letters, Volume 19, Issue 23, p. 962 –963
- DOI: 10.1049/el:19830654
- Type: Article
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Thin SiO2 layers, deposited by low-power room-temperature sputtering, have been employed as surface protection coatings during Zn diffusion into GaAs. These layers prevent surface erosion of the GaAs, but allow the Zn diffusion to proceed with negligible attenuation. The use of arsenic over-pressure during diffusion can thus be avoided.
500 Mbit/s transmission experiment using 1.3 μm wavelength InGaAsP/InP high-speed surface-emitting DH LEDs
- Author(s): A. Suzuki ; H. Nomura ; K. Minemura
- Source: Electronics Letters, Volume 19, Issue 23, p. 963 –965
- DOI: 10.1049/el:19830655
- Type: Article
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A 1.3 μm-wavelength high-speed surface-emitting DH LED, with 0.6 ns rise time and 1.3 ns fall time, has been developed by optimal design of both the LED parameters and driving circuit. A 500 Mbit/s RZ pseudorandom pulse transmission experiment using the high-speed DH LED has been performed with a 5.7 dB level margin over a 2.7 km optical fibre. The 500 Mbit/s LED system feasibility has been confirmed.
High-strength silica fibres in a long length coated at a speed of 5 m/s
- Author(s): U.C. Paek and C.M. Schroeder
- Source: Electronics Letters, Volume 19, Issue 23, p. 965 –966
- DOI: 10.1049/el:19830656
- Type: Article
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We report the strength characteristics of high-speed coated optical fibres. We used synthetic drawn 125 μm-diameter-fibre silica rods coated in-line with a 50 μm-thick single-layer coating at a rate of 5 m/s. A 50.8 km length of fibre was drawn into sample lengths ranging from ∼ 5 to 7 km from each rod. All the fibres were proof tested at three different stress levels up to 2.1 GN/m2, resulting in an average survival length of ∼ 10 and 3 km, respectively, at 1 4 GN/m2 (200 kpsi) and 2.1 GN/m2 (300 kpsi).
New multilayered slot-line structures with high nonreciprocity
- Author(s): G. Böck
- Source: Electronics Letters, Volume 19, Issue 23, p. 966 –968
- DOI: 10.1049/el:19830657
- Type: Article
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Two new multilayered slot-line structures containing ferrites are proposed. The lines offer a much higher differential phase shift Δβ = β+ – β− than those known to the author up to now. First numerical results for the differential phase shift Δβ are presented, and are partly compared with measurements.
Integrated MOS offset error canceller for analogue adaptive transversal filter
- Author(s): T. Enomoto ; T. Ishihara ; M. Yasumoto ; K. Watanabe
- Source: Electronics Letters, Volume 19, Issue 23, p. 968 –970
- DOI: 10.1049/el:19830658
- Type: Article
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An offset error canceller based on the switched-capacitor technique for realisation of analogue LSIs is developed using a short-channel MOSFET process. Excellent characteristics, such as exceptional capability of suppression of the DC offset component ranging from -3 V to +3 V, large dynamic range of 83 dB and fast operation speed of 2 MHz clock rate, are obtained.
Parasitics-compensated building blocks for switched-capacitor filters
- Author(s): T. Inoue and F. Ueno
- Source: Electronics Letters, Volume 19, Issue 23, p. 970 –971
- DOI: 10.1049/el:19830659
- Type: Article
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970
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A switched-capacitor voltage-controlled charge source with differential outputs and a switched-capacitor differential integrator are proposed. The proposed circuits are parasitics insensitive, and can be operated using only a two-phase clock.
Broadband terminations for magnetostatic surface waves
- Author(s): J. Krug and P. Edenhofer
- Source: Electronics Letters, Volume 19, Issue 23, p. 971 –972
- DOI: 10.1049/el:19830660
- Type: Article
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The properties of magnetostatic surface wave (MSSW) devices are disturbed by the finite length of the YIG film. Such disturbances, causing interference phenomena of MSSW reflected from both film ends, can be measured in the time domain by multiple reflections or in the frequency domain by a passband ripple. These reflections can be eliminated by adequately loading the film ends with semiconductive samples.
Effect of nuclear radiation on Selfoc microlenses
- Author(s): E.J. Friebele
- Source: Electronics Letters, Volume 19, Issue 23, p. 972 –974
- DOI: 10.1049/el:19830661
- Type: Article
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Exposure of quarter pitch SLS and SLW Selfoc microlenses to moderate radiation doses ∼50 Gy has been found to induce optical attenuations of as much as 1 dB at 0.85 μm. Although significant recovery is noted in the SLW lens over 24 h following the irradiation, little decrease has been measured in the SLS lens. Spectral measurements of the induced absorption have revealed a monotonic decrease with increasing wavelength (0.6–1.6 μm).
Effect of auger recombination on the threshold characteristics of gain-guided InGaAsP lasers
- Author(s): G.P. Agrawal and N.K. Dutta
- Source: Electronics Letters, Volume 19, Issue 23, p. 974 –976
- DOI: 10.1049/el:19830662
- Type: Article
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Experimental and theoretical results are presented to study the effect of Auger recombination on the threshold current of gain-guided InGaAsP lasers. A comparison of theory and experiment suggests that Auger recombination should be included for a reasonable agreement between them. It is shown that a rapid increase of the threshold current for narrow stripes is due to the combined effect of index anti-guiding and Auger recombination. Our deduced values of the Auger coefficient at 1.3 and 1.55 μm indicate that it increases rapidly with decreasing bandgap.
Screening of long-wavelength laser at high temperature and high current levels
- Author(s): H. Higuchi ; E. Oomura ; R. Hirano ; Y. Sakakibara ; H. Namizaki ; W. Susaki ; K. Fujikawa
- Source: Electronics Letters, Volume 19, Issue 23, p. 976 –977
- DOI: 10.1049/el:19830663
- Type: Article
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It is found that electroluminescent mode aging at high-temperature and high-current levels is useful for selecting long-lived InGaAsP 1.3 μm lasers. Lasers selected by this screening have little change in threshold current or forward voltage through the aging test at an elevated temperature with constant light-output power.
CMOS logic circuit optimum design for radiation tolerance
- Author(s): H. Hatano and M. Shibuya
- Source: Electronics Letters, Volume 19, Issue 23, p. 977 –979
- DOI: 10.1049/el:19830664
- Type: Article
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CMOS logic circuit optimum design for radiation tolerance has been investigated, based on NMOS and PMOS transistor parameter shift data due to radiation effects. The DC noise immunity for the three-input NAND has been found to be 36% greater than for the three-input NOR. The gate area for the optimised NAND is about three times smaller than that for the optimised NOR.
The case for using a matched load standard for six-port calibration
- Author(s): P.I. Somlo
- Source: Electronics Letters, Volume 19, Issue 23, p. 979 –980
- DOI: 10.1049/el:19830665
- Type: Article
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The case for using a matched load standard as one of the calibrating standards for six-port calibration is presented. Results of a precision calibration procedure are given, which show the errors near the centre of the Smith chart which resulted from not using a matched load standard.
Simple fibre-optic sensor for detecting water penetration into optical fibre cables
- Author(s): A.G.W.M. de Jongh ; M.B.J. Diemeer ; E.S.d. Trommel ; A.H.E. Breuls
- Source: Electronics Letters, Volume 19, Issue 23, p. 980 –981
- DOI: 10.1049/el:19830666
- Type: Article
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In this sensor concept a graded-index fibre is pressed on a periodic structure by a material that swells in water, causing microbending loss. Optimum values of the wavelength of the periodic structure are calculated and confirmed by measurements. The sensor can easily be integrated in an optical fibre cable; water penetration can then be localised by OTDR.
Self resonant IDT as a grating reflector of surface acoustic waves
- Author(s): J.P. Agrawal ; P. Sudhakar ; A.B. Bhattacharyya
- Source: Electronics Letters, Volume 19, Issue 23, p. 982 –983
- DOI: 10.1049/el:19830667
- Type: Article
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p.
982
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An IDT, when resonantly loaded by a pure inductance, behaves as a perfect reflector of SAWs. It is shown that this ideal condition can be approached by using the self resonance of an IDT. The reflection coefficient of the self resonant IDT is calculated to be about 0.96 and is observed to be in the range 0.93 to 0.95. It is demonstrated that the frequency of self resonance at which the reflection peak and hence the transmission null occurs can be shifted by an external capacitor connected across the self resonant reflector IDT.
High-speed GaAs SCFL monolithic integrated decision circuit for Gbit/s optical repeaters
- Author(s): N. Ohta and T. Takada
- Source: Electronics Letters, Volume 19, Issue 23, p. 983 –985
- DOI: 10.1049/el:19830668
- Type: Article
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A high-speed GaAs monolithic integrated decision circuit for Gbit/s optical repeaters, based on source coupled FET logic (SCFL) and designed to be completely ECL-compatible, has been developed. A clock phase margin of 150 degrees at 2 Gbit/s and IC yields of about 60% are achieved by using SCFL configuration. The developed IC operates stably from 10 to 60°C ambient temperature over a supply voltage fluctuation of more than 2 V.
Growth of large areas of grain boundary-free silicon-on-insulator
- Author(s): J.P. Colinge ; D. Bensahel ; M. Alamome ; M. Haond ; J.C. Pfister
- Source: Electronics Letters, Volume 19, Issue 23, p. 985 –986
- DOI: 10.1049/el:19830669
- Type: Article
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A technique combining a raster laser scan, selective annealing using patterned antireflection stripes and a seeding window has been successfully used to grow large single crystals of silicon-on-insulator. The raster-scanned laser spot simulates an advancing linear heat source and the anti-reflection stripes modulate the trailing edge in such a way that parasitic random nucleation is avoided. The seeding gives the film its crystal orientation.
Enhancement-mode metal/(Al,Ga)As/GaAs buried-interface field-effect transistor (BIFET)
- Author(s): T.J. Drummond ; W. Kopp ; D. Arnold ; R. Fischer ; H. Morkoç ; L.P. Erickson ; P.W. Palmberg
- Source: Electronics Letters, Volume 19, Issue 23, p. 986 –988
- DOI: 10.1049/el:19830670
- Type: Article
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Undoped Al0.5Ga0.5As is used as an insulator layer in the fabrication of MIS-type buried-interface field-effect transistors (BIFETs). The devices had a 2.5 μm-long gate and an insulator layer 1000 Å thick. When operated in an accumulation mode the transconductance and maximum current increased from 21 mS/mm and 77 mA/mm at 300 K to 40 mS/mm and 138 mA/mm at 77 K, respectively. The maximum possible 77 K transconductance is calculated as approximately 130 mS/mm. These preliminary experimental results are the best yet reported for a GaAs MIS-type device and represent the first report of enhanced device performance at cryogenic temperatures as a result of an increased electron saturation velocity.
Structure of GaAs-Ga1−xAlxAs superlattices grown by metal-organic chemical vapour deposition
- Author(s): R.J.M. Griffiths ; N.G. Chew ; A.G. Cullis ; G.C. Joyce
- Source: Electronics Letters, Volume 19, Issue 23, p. 988 –990
- DOI: 10.1049/el:19830671
- Type: Article
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988
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A computer-controlled metal-organic chemical vapour deposition system employing a fast-switching gas manifold has been used to prepare GaAs-Ga1−xAlxAs superlattice structures. A combination of cross-sectional transmission electron microscopy and Auger and secondary ion mass spectrometry sputter profiling have allowed accurate measurements to be made of layer thickness and GaAs-Ga1−xAlxAs interface widths. Layers as thin as 15 Å have been observed and interface widths less than 20 Å measured.
Concept of multiport-coupling beam-switching network and its basic performance in K-band
- Author(s): M. Kawai ; K. Suzuki ; S. Egami
- Source: Electronics Letters, Volume 19, Issue 23, p. 990 –991
- DOI: 10.1049/el:19830672
- Type: Article
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The letter reports the concept of a new switching/amplifying network, and its basic performance, for scanning the down-link beam rapidly in multibeam satellite systems. Experiments in the K-band have shown 85% power-combining efficiency, more than 17 dB isolation and 400 ns switching speed.
Efficient algorithm for reduction by continued-fraction expansion about s = 0 and s = a
- Author(s): T.N. Lucas
- Source: Electronics Letters, Volume 19, Issue 23, p. 991 –993
- DOI: 10.1049/el:19830673
- Type: Article
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991
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An algorithm is given for model reduction by continued-fraction expansion about the origin and a general point. It is seen to be more efficient than the existing method and has the advantage of also generating biased models. An example illustrates its use.
Effects of grain boundary passivation on the characteristics of p-channel MOSFETs in LPCVD polysilicon
- Author(s): S.D.S. Malhi ; R.R. Shah ; H. Shichijo ; R.F. Pinizzotto ; C.E. Chen ; P.K. Chatterjee ; H.W. Lam
- Source: Electronics Letters, Volume 19, Issue 23, p. 993 –994
- DOI: 10.1049/el:19830674
- Type: Article
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p-channel MOSFETs in LPCVD polysilicon have been built. Grain boundary passivation using a plasma of hydrogen has been explored as a means of improving the device performance. Dramatic enhancement of drive current and curtailment of leakage current have been observed. The devices are well suited for application as load elements in CMOS static RAMs.
Length dependence of optical fibre bandwidth
- Author(s): M. Eriksrud ; A.R. Mickelson ; N. Ryen
- Source: Electronics Letters, Volume 19, Issue 23, p. 994 –996
- DOI: 10.1049/el:19830675
- Type: Article
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Dispersion measurements performed by cutting a 4 km-long fibre show how the length dependence of the fibre's bandwidth varies with operating wavelength. Resplicing the fibre yields essentially the same result.
Ultimate limit of polarisation holding in single-mode fibres
- Author(s): E. Brinkmeyer and W. Eickhoff
- Source: Electronics Letters, Volume 19, Issue 23, p. 996 –997
- DOI: 10.1049/el:19830676
- Type: Article
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996
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It is shown that anisotropic Rayleigh scattering limits the polarisation-holding capability of single-mode fibres. This effect yields coupling to the crosspolarised mode of −40 to −50 dB over 1 km of fibre length.
Direct rotation-rate detection with a fibre-optic gyro by using digital data processing
- Author(s): K. Böhm ; P. Marten ; E. Weidel ; K. Petermann
- Source: Electronics Letters, Volume 19, Issue 23, p. 997 –999
- DOI: 10.1049/el:19830677
- Type: Article
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997
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By using digital processing, the dynamic range of gyros with direct rotation-rate detection is no longer restricted. The linearity error is less than ±1% within a rotation range of 300 to 200000/h.
Performance of DPSK system in impulsive atmospheric radio noise with varying impulse rates and intersymbol interference
- Author(s): V.K. Jain and S.N. Gupta
- Source: Electronics Letters, Volume 19, Issue 23, p. 999 –1000
- DOI: 10.1049/el:19830678
- Type: Article
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In the letter the performance of the DPSK system in the presence of atmospheric impulsive noise of varying impulse rates and intersymbol interference (ISI) has been evaluated. Numerical results are presented for various impulse rates and levels of ISI. The evaluated performance leads to certain interesting observations. Possible explanations for these observations are also offered.
Semiconductor laser linewidth broadening due to 1/f carrier noise
- Author(s): M.J. O'Mahony and I.D. Henning
- Source: Electronics Letters, Volume 19, Issue 23, p. 1000 –1001
- DOI: 10.1049/el:19830679
- Type: Article
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The effect of low frequency (1/f) carrier noise on the linewidth of a semiconductor laser is investigated. Theoretical results suggest that broadening is strongly dependent on the 3 dB corner frequency of the 1/f noise. As an example, a linewidth of 80 MHz broadens to 110 MHz with a 5 MHz corner frequency.
Semiconductor light sources with capabilities of electronic beam-scanning
- Author(s): I. Suemune ; Y. Kan ; M. Yamanishi
- Source: Electronics Letters, Volume 19, Issue 23, p. 1002 –1003
- DOI: 10.1049/el:19830680
- Type: Article
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A new type of beam-scannable light source which utilises a grating output coupler is proposed. Beam-deflection of ten degrees is demonstrated in a superluminescent mode, and the possibility of beam-scanning in a lasing mode is discussed.
Digital radio outage prediction with space diversity
- Author(s): J.C. Campbell
- Source: Electronics Letters, Volume 19, Issue 23, p. 1003 –1004
- DOI: 10.1049/el:19830681
- Type: Article
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The letter presents a new outage prediction technique for digital radio systems when baseband bit combining is employed. The method utilises the concept of a ‘normalised system signature’, an approach which enables comparisons of modulation schemes and equaliser implementations.
ESR study on loss increase of 500°C heat-treated Ge-doped optical fibres
- Author(s): M. Nakahara ; Y. Ohmori ; H. Itoh
- Source: Electronics Letters, Volume 19, Issue 23, p. 1004 –1006
- DOI: 10.1049/el:19830682
- Type: Article
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Spectral changes of ESR signals due to germanium associated Ge(3) centres were observed on heat-treated optical fibres and preforms. The defect centres essentially exist in as-drawn fibres, even if preforms have been oxidised prior to drawing. The 500°C heat treatment of Ge-doped fibres caused a remarkable decrease in the ESR intensity of Ge(3) centres, subsequently causing optical loss increase around the 1.39 μm wavelength.
Loss increase in silicone-coated fibres with heat treatment
- Author(s): Y. Ohmori ; H. Itoh ; M. Nakahara ; N. Inagaki
- Source: Electronics Letters, Volume 19, Issue 23, p. 1006 –1008
- DOI: 10.1049/el:19830683
- Type: Article
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Loss-increase characteristics for four kinds of silicone-coated optical fibres with heat treatment have been investigated OH ion absorption loss increase occurs by heat treatment above 250°C, and becomes marked in heat treatment at 500°C for GeO2-doped silica fibres. The others did not exhibit any loss increase at 1.39 μm due to OH ions. It was found, from the experiments, that the loss-increase characteristics in heat treatment depend strongly on the glass system in the fibre core.
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