Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 19, Issue 1, 6 January 1983
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 19, Issue 1
6 January 1983
VLSI—are smaller devices and more complex chips mutually exclusive?
- Author(s): D.H. Roberts
- Source: Electronics Letters, Volume 19, Issue 1, page: 1 –1
- DOI: 10.1049/el:19830001
- Type: Article
- + Show details - Hide details
-
p.
1
(1)
It is suggested that the exploitation of complex silicon chips incorporating submicrometre devices will require the use of highly structured architecture, such as systolic arrays, with maximum exphasis on ‘nearest-neighbour’ interconnections.
High-performance single-mode AlGaAs Gaussian channel substrate planar laser diodes
- Author(s): A.D. Ceruzzi
- Source: Electronics Letters, Volume 19, Issue 1, p. 1 –3
- DOI: 10.1049/el:19830002
- Type: Article
- + Show details - Hide details
-
p.
1
–3
(3)
Stable fundamental transverse and single longitudinal mode CW behaviour is demonstrated using a Gaussian channel substrate planar waveguide laser. Highly reliable performance including low threshold current, extremely low spontaneous background level and high-power CW operation has been achieved. In addition, the longitudinal mode has a locking range of 7.8°C, where the wavelength changes at a rate of 0.6 Å/°C.
Single-mode semiconductor laser optically pumped by an injection laser
- Author(s): T.C. Damen ; M.A. Duguay ; B.I. Miller ; C. Lin
- Source: Electronics Letters, Volume 19, Issue 1, p. 3 –4
- DOI: 10.1049/el:19830003
- Type: Article
- + Show details - Hide details
-
p.
3
–4
(2)
Nanosecond pulses from an AlGaAs injection laser have been used to optically pump an ultrashort-cavity InP laser. Subnanosecond pulses from the InP laser exhibit a single longitudinal mode at 0.92–0.93 μm.
Fast processing of 4 in silicon wafers using two 150 W halogen lamps
- Author(s): D.P. Vu ; M. Haond ; T. Ternisien D'ouville ; A. Perio ; H. Mingam
- Source: Electronics Letters, Volume 19, Issue 1, p. 4 –6
- DOI: 10.1049/el:19830004
- Type: Article
- + Show details - Hide details
-
p.
4
–6
(3)
We describe a very simple annealing system in which two 150 W halogen lamps are scanned on a Si wafer. Electrical and structural measurements indicate complete activation of the impurities without any appreciable diffusion and a good recovery of the damaged lattice. Moreover, two key processing requirements are satisfied: highly uniform sheet resistance across the wafer (standard deviation 3.5%) and the absence of induced warping of the wafer.
Anodic oxidation of a-Si:H films
- Author(s): H. Yamamoto ; S. Arimoto ; H. Hasegawa ; H. Ohno ; J. Nanjo
- Source: Electronics Letters, Volume 19, Issue 1, p. 6 –7
- DOI: 10.1049/el:19830005
- Type: Article
- + Show details - Hide details
-
p.
6
–7
(2)
It is shown that thick native oxide layers (up to 2500 Å) can be grown on a-Si:H films at room temperature by anodic oxidation. Ellipsometric measurements indicate uniformity of the oxide layer with a refractive index of 1.46. The voltage growth rate is found to be 5.3 Å/V.
Numerical algorithm for pole-sensitivity study of LC ladder networks
- Author(s): E.C. Tan
- Source: Electronics Letters, Volume 19, Issue 1, p. 7 –9
- DOI: 10.1049/el:19830006
- Type: Article
- + Show details - Hide details
-
p.
7
–9
(3)
Pole displacements of LC ladder networks due to parameter variations can be easily and accurately determined by a conceptually simple and computationally efficient algorithm together with the system matrix. The derivation of the algorithm is based on the wave-chain technique. The results will be of interest to sensitivity and optimisation studies of network design problems.
Design of 2-D recursive digital filters satisfying prescribed magnitude and constant group delay response
- Author(s): S. Golikeri ; M. Ahmadi ; V. Ramachandran
- Source: Electronics Letters, Volume 19, Issue 1, p. 9 –11
- DOI: 10.1049/el:19830007
- Type: Article
- + Show details - Hide details
-
p.
9
–11
(3)
Generation of the 2-variable very-strictly-Hurwitz polynomial (VSHP) using properties of derivatives of even or odd parts of Hurwitz polynomials and their applications in designing 2-D recursive digital filters satisfying prescribed magnitude and constant group delay response is described.
Radiation-induced loss and colour-centre concentration in optical fibres
- Author(s): H. Yashima ; H. Mitera ; Y. Itoh
- Source: Electronics Letters, Volume 19, Issue 1, p. 11 –12
- DOI: 10.1049/el:19830008
- Type: Article
- + Show details - Hide details
-
p.
11
–12
(2)
The number of colour centres generated by gamma radiation has been measured with the ESR method; radiation-induced loss was obtained during the steady-state irrediation. By comparing these data, the induced loss in Ge/P-doped GI fibres corresponding to one colour centre is estimated to be 5.5 × 10−15 dB/km.
PMOS transistors fabricated in large-area laser-crystallised Si on silica
- Author(s): D. Herbst ; M.A. Bösch ; R.A. Lemons ; S.K. Tewksbury ; T.R. Harrison
- Source: Electronics Letters, Volume 19, Issue 1, p. 12 –14
- DOI: 10.1049/el:19830009
- Type: Article
- + Show details - Hide details
-
p.
12
–14
(3)
PMOS transistors have been fabricated in device-worthy Si which was achieved by large-area laser-crystallisation of Si on silica. The crystallised Si contains few large-angle grain boundaries due to laser-beam inhomogeneity but exhibits subgrain boundaries aligned along the laser track. Cracking of the Si, a result of the mismatch of the thermal expansion coefficients of Si and silica, has been substantially reduced by removing only a stripped region of the SiO2 encapsulation layer for transistor fabrication. A high yield and good electrical characteristics of the devices were obtained.
Coherent optical-fibre sensors with modulated laser sources
- Author(s): I.P. Giles ; D. Uttam ; B. Cylshaw ; D.E.N. Davies
- Source: Electronics Letters, Volume 19, Issue 1, p. 14 –15
- DOI: 10.1049/el:19830010
- Type: Article
- + Show details - Hide details
-
p.
14
–15
(2)
Coherent optical-fibre sensing based on environmentally induced phase modulation can be extremely sensitive, but interferometric detection limits dynamic range. This letter examines a separate class of applications where the very high sensitivity is not required, but where remote optical sensing of relatively large physical variations is desirable. We describe a system whereby source modulation may be used to determine the state of a remote interferometer accurately and unambiguously over phase modulations from a fraction of an optical wavelength to tens or even hundreds of wavelengths. The concept may also be utilised as the basis of a multiplexed sensor highway, and preliminary results are reported.
Sampling approach for fast computation of scattered fields
- Author(s): O.M. Bucci and G. Di Mass
- Source: Electronics Letters, Volume 19, Issue 1, p. 15 –17
- DOI: 10.1049/el:19830011
- Type: Article
- + Show details - Hide details
-
p.
15
–17
(3)
The letter describes an efficient computational technique, based on a sampling approach, of the evalution of the far-field radiation integral of an arbitrary source distribution. The technique virtually eliminates any redundancy of computation by reducing to a minimum the number of elements of information required for a satisfactory radiated field reconstruction. These elements, in turn, can be efficiently computed by a proper fast Fourier transform algorithm.
Polarisation preserving single-mode-fibre coupler
- Author(s): C.A. Villarruel ; M. Abebe ; W.K. Burns
- Source: Electronics Letters, Volume 19, Issue 1, p. 17 –18
- DOI: 10.1049/el:19830012
- Type: Article
- + Show details - Hide details
-
p.
17
–18
(2)
A polarisation-preserving single-mode-fibre coupler made by an etch-fusion technique with Hitachi single-polarisation fibre is reported. Polarisation isolation of 10–20 dB is typically maintained through the coupler. Power division of ̃ 45–55% is achieved with an excess loss of 0.2 dB.
Theory and design considerations for a new millimetre-wave leaky groove-guide antenna
- Author(s): P. Lampariello and A.A. Oliner
- Source: Electronics Letters, Volume 19, Issue 1, p. 18 –20
- DOI: 10.1049/el:19830013
- Type: Article
- + Show details - Hide details
-
p.
18
–20
(3)
A transverse equivalent network is presented for a new type of leaky-wave antenna based on the groove guide and suitable for millimetre waves. Employing this network, the antenna's performance characteristics are explained and systematic design considerations are deduced.
Monte Carlo particle simulation of a GaAs short-channel MESFET
- Author(s): Y. Awano ; K. Tomizawa ; N. Hashizume ; M. Kawashima
- Source: Electronics Letters, Volume 19, Issue 1, p. 20 –21
- DOI: 10.1049/el:19830014
- Type: Article
- + Show details - Hide details
-
p.
20
–21
(2)
A Monte Carlo particle simulation of a 0.25 μm-long gate (and 0.25 μm-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of gm and Idss of 643 mS/mm and 5.35 mA/20 μm were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.
Computer simulation of an oxide walled emitter STL gate
- Author(s): D.J. Roulston and M. Depey
- Source: Electronics Letters, Volume 19, Issue 1, p. 21 –22
- DOI: 10.1049/el:19830015
- Type: Article
- + Show details - Hide details
-
p.
21
–22
(2)
A Schottky transistor logic (STL) gate is studied using computer simulation. The relation between propagation delay time and the spacing between the diffused emitter and the isolation oxide is shown to be such that an optimum spacing exists.
Measurement of very-high-speed photodetectors with picosecond InGaAsP film lasers
- Author(s): J.M. Wiesenfeld ; A.R. Chraplyvy ; J. Stone ; C.A. Burrus
- Source: Electronics Letters, Volume 19, Issue 1, p. 22 –24
- DOI: 10.1049/el:19830016
- Type: Article
- + Show details - Hide details
-
p.
22
–24
(3)
The impulse responses of very-high-speed photodiodes are determined using 5–15 ps pulses from optically pumped ultrashort-cavity film lasers operating between wavelengths of 1.15 μm and 1.54 μm. The measured response time (FWHM) for a back-illuminated InGaAs/InP punch-through PIN photodiode is 30 Ps.
Computationally efficient discrete cosine transform algorithm
- Author(s): N. Nasrabadi and R. King
- Source: Electronics Letters, Volume 19, Issue 1, p. 24 –25
- DOI: 10.1049/el:19830017
- Type: Article
- + Show details - Hide details
-
p.
24
–25
(2)
An algorithm is developed for evaluating the discrete cosine transform using DFT and polynomial transforms. It is shown to be computationally more efficient than existing algorithms.
Generation of field scattered by imperfectly conducting objects from the solution of a perfectly conducting object
- Author(s): A.A. Sebak ; L. Shafai ; A. Mohsen
- Source: Electronics Letters, Volume 19, Issue 1, p. 25 –27
- DOI: 10.1049/el:19830018
- Type: Article
- + Show details - Hide details
-
p.
25
–27
(3)
Surface currents induced on imperfectly conducting objects are obtained from the surface current of a perfectly conducting object using the impedance boundary conditions on its surface. The resulting errors in computation of these surface currents are determined and are shown to depend on the excitation source.
Calculated and measured spot size of equivalent Gaussian field in single-mode optical fibres
- Author(s): E. Nicolaisen and P. Danielsen
- Source: Electronics Letters, Volume 19, Issue 1, p. 27 –29
- DOI: 10.1049/el:19830019
- Type: Article
- + Show details - Hide details
-
p.
27
–29
(3)
Measurements of the integrated far field from a single-mode fibre using a simple set-up for attenuation measurements yields the spot size of the equivalent Gaussian field, or the ESI parameters. Using a multilayer method for calculating the field in the fibre, it is shown that the obtained spot size (ESI values) will depend on how this parameter is extracted.
Terminations for component-simulation-type SC ladder filters
- Author(s): P.V. Ananda Mohan ; V. Ramachandran ; M.N.S. Swamy
- Source: Electronics Letters, Volume 19, Issue 1, p. 29 –31
- DOI: 10.1049/el:19830020
- Type: Article
- + Show details - Hide details
-
p.
29
–31
(3)
A circuit for simulating the termination resistances of component-simulation-type SC ladder filters using LDI transformation is described.
Erratum: Simple low-cost correlator and multiplier circuits
- Author(s): P.J. Glen
- Source: Electronics Letters, Volume 19, Issue 1, page: 30 –30
- DOI: 10.1049/el:19830021
- Type: Article
- + Show details - Hide details
-
p.
30
(1)
Erratum: Implementation of convolution and Fourier transforms using 1-bit systolic arrays
- Author(s): J.S. Ward and B.J. Stanier
- Source: Electronics Letters, Volume 19, Issue 1, page: 30 –30
- DOI: 10.1049/el:19830022
- Type: Article
- + Show details - Hide details
-
p.
30
(1)
Erratum: Further results on maximally flat nonrecursive digital filters
- Author(s): M.U.A. Bromba and H. Ziegler
- Source: Electronics Letters, Volume 19, Issue 1, page: 30 –30
- DOI: 10.1049/el:19830023
- Type: Article
- + Show details - Hide details
-
p.
30
(1)
Erratum: Effects of filtering on statistics of rain-induced fade durations
- Author(s): E. Mattriciani
- Source: Electronics Letters, Volume 19, Issue 1, page: 30 –30
- DOI: 10.1049/el:19830024
- Type: Article
- + Show details - Hide details
-
p.
30
(1)
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article