Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887
banner image
image of Volume 19, Issue 15
Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 19, Issue 15, 21 July 1983

Volumes & issues:

Volume 19, Issue 15

21 July 1983

Short-coupled-cavity (SCC) InGaAsP injection lasers for CW and high-speed single-longitudinal-mode operation
  • Author(s): Chinlon Lin ; C.A. Burrus ; R.A. Linke ; I.P. Kaminow ; J.S. Ko ; A.G. Dentai ; R.A. Logan ; B.I. Miller
  • Source: Electronics Letters, Volume 19, Issue 15, p. 561 –562
  • DOI:  10.1049/el:19830382
  • Type: Article
  • + Show details - Hide details
  • p. 561 –562 (2)
    CW and high-speed (100 ps pulse) single-longitudinal-mode operation has been achieved with a short-coupled-cavity (SCC) InGaAsP injection laser (in the 1.3 μm to 1.55 μm spectral range) consisting of a short (50–80 μm) cleaved laser and a short (30–80 μm) external air resonator with a high-reflectivity mirror. The SCC laser resonator combines the advantages of both a short-cavity laser and a coupled-cavity laser for effective mode selection. Single-mode operation has been maintained at modulation rates of 2 Gbit/s.
    Add to favourites
    Export citations
Reduction of preamplifier noise induced measurement errors in radiometers
Hydroxyl concentration profile in low-loss graded-index fibres
Electrical measurements on silver-diffused InP
Thermally accelerated degradation of 1.3 μm BH lasers
  • Author(s): Y. Nakano ; M. Fukuda ; H. Sudo ; O. Fujita ; G. Iwane
  • Source: Electronics Letters, Volume 19, Issue 15, p. 567 –568
  • DOI:  10.1049/el:19830386
  • Type: Article
  • + Show details - Hide details
  • p. 567 –568 (2)
    An investigation has been made into the thermally accelerated degradation in ACC lifetests for 1.3 μm BH lasers. The CW threshold current under high-stress aging has been evaluated at various temperatures. An increase in the CW threshold current was observed which could be represented as a combination of two linear variations. It was found that the rapid increase of the CW threshold current was dependent on the evaluation temperature, which could be an important parameter in assessing the degradation of InGaAsP lasers.
    Add to favourites
    Export citations
Electric-field-shielding layers formed by oxygen implantation into silicon
  • Author(s): S. Nakashima ; M. Akiya ; K. Kato
  • Source: Electronics Letters, Volume 19, Issue 15, p. 568 –570
  • DOI:  10.1049/el:19830387
  • Type: Article
  • + Show details - Hide details
  • p. 568 –570 (3)
    The electric-field-shielding effect was found in a layer consisting of a mixture of polycrystalline silicon and silicon oxide formed by oxygen ion implanatation. The layer was formed between the buried SiO2 and the upper Si layer, which improved characteristics for MOSFETs fabricated using SIMOX (separation by implanted oxygen) technology. By forming this layer, the threshold voltages for the MOSFETs were almost independent of substrate bias. Drain-to-source breakdown voltages for the p-MOSFETs and n-MOSFETs were raised to 250 V and 180 V, respectively.
    Add to favourites
    Export citations
Numerical investigation of soliton interaction
Generation of codes with good autocorrelation properties
Topology-finite-element method for solving electromagnetic field problems
  • Author(s): Song Guoxiang  and  Shi Huli
  • Source: Electronics Letters, Volume 19, Issue 15, p. 572 –574
  • DOI:  10.1049/el:19830390
  • Type: Article
  • + Show details - Hide details
  • p. 572 –574 (3)
    The topology-finite-element method has been proposed for solving electromagnetic field problems. This method is characterised by a higher degree of simplicity and standardisation in comparison with the finite-element method. On the other hand, the mathematical model derived by this method is proved to be simple and of evident geometric and physical significance as well, thus creating favourable conditions for making optimal designs in engineering science.
    Add to favourites
    Export citations
Electro-optic sampling with picosecond resolution
Accuracy of design data for microstrip of unequal widths in an inhomogeneous medium
General sensitivity formulas for lossless two-ports
  • Author(s): H.J. Orchard ; G.C. Temes ; T. Cataltepe
  • Source: Electronics Letters, Volume 19, Issue 15, p. 576 –578
  • DOI:  10.1049/el:19830393
  • Type: Article
  • + Show details - Hide details
  • p. 576 –578 (3)
    Simple first-order sensitivity relations, which give the effects of component-value variations, losses and stray elements in both singly and doubly terminated lossless two-ports, are introduced. They provide a generalisation of some earlier results, and also lead to some new formulas. They are also applicable to active-RC and switched-capacitor filters modelled on doubly terminated lossless ladder two-ports.
    Add to favourites
    Export citations
Reduction of temperature and vibration sensitivity of a polarimetric current sensor
Limitations of looped-line scheme for overcoming wired-or glitch effects
Resolution improvement in refracted near-field index measurement by a lens-shaped liquid cell
Fabry-Perot cavity type 1.5 μm InGaAsP BH-laser amplifier with small optical-mode confinement
Fabrication of SiO2-TiO2 glass planar optical waveguides by flame hydrolysis deposition
Isolation spectra for laser diode optical switch
230–271 GHz cryogenic radiometer
Variability of mobile radio path loss in Auckland at 465 MHz
  • Author(s): G.B. Rowe ; A.G. Williamson ; B. Egan
  • Source: Electronics Letters, Volume 19, Issue 15, p. 588 –589
  • DOI:  10.1049/el:19830401
  • Type: Article
  • + Show details - Hide details
  • p. 588 –589 (2)
    A series of field trials in Auckland at 465 MHz have confirmed that the variability of mobile radio path loss is approximately normally distributed and can, therefore, be represented by a standard deviation. This standard deviation has been found to be dependent on the mobile terminal's environment and on frequency, but is essentially independent of base-station antenna height and path length. Standard deviations have been measured as 5.2, 4.4, 5.4 and 5.2 dB for rural, suburban, light urban and urban environments, respectively.
    Add to favourites
    Export citations
Middle IR As-S and As-Se glass fibres with optical losses lower than 1 dB/m
Attenuation measurements on MOCVD-grown GaAs/GaAlAs optical waveguides
Novel collision detection technique for CSMA/CD based fibre-optic local area networks
GaInAsP/InP buried-heterostructure optical waveguides at a 1.5 µm wavelength
Characteristics of wire-space-type submarine optical cable
  • Author(s): Y. Kimura ; Y. Murakami ; K. Noguchi ; K. Ishihara
  • Source: Electronics Letters, Volume 19, Issue 15, p. 595 –596
  • DOI:  10.1049/el:19830406
  • Type: Article
  • + Show details - Hide details
  • p. 595 –596 (2)
    A new type of submarine optical cable, called wire space cable, is proposed for utilisation in shallow sea areas. In the cable, optical fibres are inserted into spaces formed between stranded wires, which are used as tension members. It has been found from a cable pulling test that nonarmoured cable elongation at 8000 m in water depth is 0.3% and armoured cable elongation at 6000 m is 0.5%. Furthermore, a hydraulic pressure test has shown that single-mode-fibre loss at 1.3 μm wavelength does not increase up to a water depth of 2700 m.
    Add to favourites
    Export citations
Relevance of complex normalisation in precision reflectometry
Selective implantation of GaAs for MESFET applications
  • Author(s): M.H. Badawi ; D.R. Dunbobbin ; J. Mun
  • Source: Electronics Letters, Volume 19, Issue 15, p. 598 –600
  • DOI:  10.1049/el:19830408
  • Type: Article
  • + Show details - Hide details
  • p. 598 –600 (3)
    A novel selective ion-implantation technique compatible with capless annealing is described. The process consists of coating the GaAs wafer with a thin layer of titanium over which photoresist can be applied and delineated several times for a number of selective implantation steps. The use of a titanium barrier layer avoids any contamination of the GaAs surface by ion-hardened photoresist. Depletion-mode MESFETs with selectively implanted channel and n+ contacts have been fabricated using this technique. Implantation through the titanium layer produced no degradation in pinch-off voltage uniformity over 2 in-diameter wafers.
    Add to favourites
    Export citations

Most viewed content for this Journal

Article
content/journals/el
Journal
5
Loading

Most cited content for this Journal

Print this page
This is a required field
Please enter a valid email address