Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 19, Issue 14, 7 July 1983
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Volume 19, Issue 14
7 July 1983
Contribution to the understanding of pattern coverage of an open-circuited microstrip wraparound antenna acting at half-wavelength resonance
- Author(s): G. Dubost
- Source: Electronics Letters, Volume 19, Issue 14, p. 505 –506
- DOI: 10.1049/el:19830343
- Type: Article
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In the case of an open-circuited microstrip antenna wrapped around a conducting cylinder and acting at a half-wavelength resonance, we studied the influence on the pattern coverage of various parameters, such as the dielectric constant of the substrate and cylinder diameter related to the wavelength. Some contradictions with another recent paper appear and are explained.
Amorphous-silicon FET array for LCD panel
- Author(s): K. Katoh ; M. Yasui ; S. Kuniyasu ; H Watanabe
- Source: Electronics Letters, Volume 19, Issue 14, p. 506 –507
- DOI: 10.1049/el:19830344
- Type: Article
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A small 20 × 20 dot matrix array of a FET has been fabricated on a glass substrate using a-Si films as the semiconductor and silicon nitride deposited from a N2-SiH4 mixture as the gate insulator. Good operation is obtained for both TN-mode and GH-mode in transparent-type LCDs. The improved fabrication process and structure are reported.
Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers
- Author(s): H. Asahi ; Y. Kawamura ; Y. Noguchi ; T. Matsuoka ; H. Nagai
- Source: Electronics Letters, Volume 19, Issue 14, p. 507 –509
- DOI: 10.1049/el:19830345
- Type: Article
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InGaAsP/InP distributed-feedback (DFB) lasers operating at 1.5 μm have been successfully fabricated by a hybrid growth technique of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). A threshold current of 180 mA at 23°C and single-longitudinal-mode operation have been obtained.
Injection-locked 1.5 μm InGaAsP/InP lasers capable of 450 Mbit/s transmission over 106 km
- Author(s): H. Nishimoto ; H. Kuwahara ; M. Motegi
- Source: Electronics Letters, Volume 19, Issue 14, p. 509 –510
- DOI: 10.1049/el:19830346
- Type: Article
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The fluctuation of longitudinal modes of a high-bit-rate modulated 1.5 μm InGaAsP/InP laser is greatly improved by injection-locking technology. A 106 km transmission at 300 Mbit/s and 450 Mbit/s was achieved with tolerable transmission losses of 37.2 dB and 36.2 dB, respectively, which implies a potential transmission distance of over 145 km.
Implications of velocity overshoot in heterojunction transit-time diodes
- Author(s): P.A. Blakey ; J.R. East ; M.E. Elta ; G.I. Haddad
- Source: Electronics Letters, Volume 19, Issue 14, p. 510 –512
- DOI: 10.1049/el:19830347
- Type: Article
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The influence of transient transport in heterojunction transittime is discussed. It is argued that overshoot effects can be important in such devices, in which case the presence of the overshoot will significantly impact device design. Appropriately designed structures are predicted to be superior to their homojunction counterparts, particularly at millimetre wavelengths.
Attenuation measurements of leaky waves by the acoustic line-focus beam
- Author(s): J. Kushibiki ; Y. Matsumoto ; N. Chubachi
- Source: Electronics Letters, Volume 19, Issue 14, p. 512 –514
- DOI: 10.1049/el:19830348
- Type: Article
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A new method of direct attenuation measurement of leaky waves is proposed through V(z) curves obtained by the line-focus-beam acoustic microscope, simultaneously giving the corresponding wave velocity. Experiments are demonstrated for fused quartz with an acoustic line-focus-beam sapphire lens of 1.0 mm radius at 226.3 MHz. The attenuation measurement is achieved with a sufficient accuracy of about 5% as compared with the calculated value.
Digital control of a two-terminal resistance
- Author(s): V.G.K. Murti
- Source: Electronics Letters, Volume 19, Issue 14, p. 514 –515
- DOI: 10.1049/el:19830349
- Type: Article
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An arrangement of a small number of discrete resistors in series is described such that the terminal resistance can be varied in digital steps through the closure of just one switch for each step. The errors due to the on-resistance of the switches are shown to be less than in the 8R-4R-2R-R arrangement for a decade range.
Physical mechanisms of bandgap-narrowing in silicon
- Author(s): W. Zagoźdźon-Wosik and W. Kuźmicz
- Source: Electronics Letters, Volume 19, Issue 14, p. 515 –516
- DOI: 10.1049/el:19830350
- Type: Article
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Experimental evidence of lattice damage strain-induced bandgap-narrowing is given. This effect is used to explain some of the discrepancies between various bandgap-narrowing values published so far.
Simultaneous multilevel proof testing of high-strength silica fibre
- Author(s): S.P. Craig ; P.L. Dunn ; J.D. Rush ; D.G. Smith ; K.J. Beales
- Source: Electronics Letters, Volume 19, Issue 14, p. 516 –517
- DOI: 10.1049/el:19830351
- Type: Article
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A technique of simultaneous multilevel proof testing of optical fibre is described and shown to be equivalent to a coarse nondestructive tensile test for the low end of the fibre strength distribution. Yields of silica fibre at four proof-test levels up to 1.9% are presented.
Resistance value and field distribution of rectangular anisotropic resistive region
- Author(s): H. Shibata and R. Terakado
- Source: Electronics Letters, Volume 19, Issue 14, p. 518 –519
- DOI: 10.1049/el:19830352
- Type: Article
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High accurate resistance values and field distributions for a rectangular anisotropic resistive region are presented by using an affine transformation and a Schwarz-Christoffel transformation. Interesting comparison between the field distribution in a Hall generator and the present result is also presented.
Minimisation of on-resistance of VDMOS power FETs
- Author(s): D.J. Byrne and K. Board
- Source: Electronics Letters, Volume 19, Issue 14, p. 519 –521
- DOI: 10.1049/el:19830353
- Type: Article
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The minimisation of on-resistance of power MOSFETs is a problem of considerable importance to high-voltage MOS designers. The results of a two-dimensional simulation of VDMOS structures are presented, with linear and hexagonal surface geometries, which takes account of the finite sheet resistance of the accumulation layer under the extended gate region. A simple distributed analytic model is also introduced which gives reasonable agreement with the numerical model and which may be used to give the functional relation ship of the on-resistance with device parameters.
Influence of substrate conductivity on characteristics of ZnO/SiO2-diaphragm piezoelectric resonators
- Author(s): K. Nakamura ; H. Sasaki ; H. Shimizu
- Source: Electronics Letters, Volume 19, Issue 14, p. 521 –522
- DOI: 10.1049/el:19830354
- Type: Article
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Most of the ZnO/SiO2-diaphragm piezoelectric composite resonators on silicon substrates exhibit Q-factors of the anti-resonance much lower than those of the resonance. It is demonstrated both theoretically and experimentally that this is caused by the conductivity of the substrate.
Planar structure AlGaAs/GaAs pin photodiode grown by MOCVD
- Author(s): M. Ito ; O. Wada ; S. Miura ; K. Nakai ; T. Sakurai
- Source: Electronics Letters, Volume 19, Issue 14, p. 522 –523
- DOI: 10.1049/el:19830355
- Type: Article
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A planar structure AlGaAs/GaAs PIN photodiode was fabricated by first using MOCVD. The p+-region was formed by Zn-diffusion in a high-resistivity AlGaAs window layer. The internal quantum efficiency, close to unity, and the cut-off frequency, as high as 1.2 GHz, have been demonstrated by 280 μm diameter devices.
1.55 μm multisection ridge lasers
- Author(s): J.E. Bowers ; L.A. Coldren ; B.R. Hemenway ; B.I. Miller ; R.J. Martin
- Source: Electronics Letters, Volume 19, Issue 14, p. 523 –525
- DOI: 10.1049/el:19830356
- Type: Article
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A new 1.55 μm wavelength GaInAsP laser is described: the multisection ridge laser. Pulsed thresholds were typically 40–80 mA. CW thresholds were comparable. The lowest measured CW threshold was 38 mA at 12°C. The laser operated stably in a single longitudinal mode (spurious modes down by −16 dB) under fast pulse modulation with a prebias below threshold. Theoretical results based on a waveguide scattering theory are in qualitative agreement with the experimental results.
Yield enhancement of bit level systolic array chips using fault tolerant techniques
- Author(s): J.V. McCanny and J.G. McWhirter
- Source: Electronics Letters, Volume 19, Issue 14, p. 525 –527
- DOI: 10.1049/el:19830357
- Type: Article
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Methods by which bit level systolic array chips can be made fault tolerant are discussed briefly. Using a simple analysis based on both Poisson and Bose-Einstein statistics we demonstrate that such techniques can be used to obtain significant yield enhancement. Alternatively, the dimensions of an array can be increased considerably for the same initial (nonfault tolerant) chip yield.
Radiation losses of E-plane groove-guide bends
- Author(s): J Meißner
- Source: Electronics Letters, Volume 19, Issue 14, p. 527 –528
- DOI: 10.1049/el:19830358
- Type: Article
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Experimental results of the radiation losses of groove-guide E-plane bends are presented together with some theoretical considerations.
Signal-to-noise performance of the pulse-interval and width-modulation system
- Author(s): S.D. Marougi and K.H. Sayhood
- Source: Electronics Letters, Volume 19, Issue 14, p. 528 –530
- DOI: 10.1049/el:19830359
- Type: Article
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A simple formula for the signal-to-noise ratio at the output of the pulse-interval and width-modulation (PIWM) system is derived. The predicted performance is compared with measured data obtained from a hardware model of the system. Simulation results are in good agreement with predictions.
Rectangular to polar conversion
- Author(s): K.M. Ibrahim and M.A.H. Abdul Karim
- Source: Electronics Letters, Volume 19, Issue 14, p. 530 –531
- DOI: 10.1049/el:19830360
- Type: Article
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For the conversion of complex numbers from the rectangular form a + jb into polar re10 = r ∠ θ, it is required to evaluate r = √(a2 + b2)and θ= tan−1 (a/b). A simplified method is presented here for evaluating r and θ from a and b using a simple analogue circuit that operates as an inverse sine function module.
Diversity advantage for cordless telephones
- Author(s): A.J. Motley and S.E. Alexander
- Source: Electronics Letters, Volume 19, Issue 14, p. 531 –533
- DOI: 10.1049/el:19830361
- Type: Article
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The advantage in using spatial diversity for cordless telephone operation at 900 MHz is examined, and the resulting improvement in performance and user density for a digital burst-mode system is compared with that for a conventional analogue FM system.
Fabrication of long-length high-strength single-mode silica fibres
- Author(s): J.G. Lamb ; A.P. Harrison ; T.M. McHugh
- Source: Electronics Letters, Volume 19, Issue 14, p. 533 –534
- DOI: 10.1049/el:19830362
- Type: Article
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The letter reports an alternative approach to the realisation of long, low-attenuation, high-strength single-mode optical fibres suitable for high bit-rate transmission over long distances in adverse environments. We show that low attenuation (less than 0.45 dB km) can be achieved in combination with high proof-test levels (1% – 2% strain) in fibre lengths greater than 5 km, using natural fused-quartz tubing, and report a 15 km fibre having an attenuation of 0.44 dB km which survived a proof test at 1% strain.
InGaAs avalanche photodiodes for 1 μm wavelength region
- Author(s): T. Shirai ; T. Mikawa ; T. Kaneda ; A. Miyauchi
- Source: Electronics Letters, Volume 19, Issue 14, p. 534 –536
- DOI: 10.1049/el:19830363
- Type: Article
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A low-noise, low-dark-current and high-speed InGaAs avalanche photodiode (APD) has been designed and fabricated. The diode has a planar structure and is composed of InP/InGaAsP/InGaAs/InP layers grown on (111)A oriented InP. At a multiplication of 10, the diode exhibited excess noise factor of 5 and cutoff frequency of more than 1 GHz. Dark current was 10 nA near breakdown voltage. The diode has been tested in an experimental optical receiver in the gigabit range (time slot 0.63 ns) and 1.3 μm. The receiver sensitivity of −29.2 dBm was obtained at an error rate of 10−11.
Accurate method for analysis of a packet speech multiplexer
- Author(s): R.C.F. Tucker
- Source: Electronics Letters, Volume 19, Issue 14, p. 536 –537
- DOI: 10.1049/el:19830364
- Type: Article
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A packet speech multiplexer is analysed using a fluid approximation for the flow of packets in and out of the multiplexer. Delay distributions and fractional packet loss are determined with a small amount of computation. Comparisons with a simulation using real speech show the analysis to be accurate.
Exact calculations of scattering parameters of a step slot width discontinuity in a unilateral fin-line
- Author(s): M. Helard ; J. Citerne ; O. Picon ; V.Fouad Hanna
- Source: Electronics Letters, Volume 19, Issue 14, p. 537 –539
- DOI: 10.1049/el:19830365
- Type: Article
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The dominant and the first four higher-order modes in a unilateral fin-line are accurately described from a thorough spectral-domain approach. Then, coupling coefficients between eigenmodes at a step slot width discontinuity to be used in the generalised scattering matrix formulation are directly computed in the spectral domain. Scattering parameters of the dominant mode in the Ka band are presented.
High-order azimuthal modes in the open resonator
- Author(s): P.K. Yu and K.M. Luk
- Source: Electronics Letters, Volume 19, Issue 14, p. 539 –541
- DOI: 10.1049/el:19830366
- Type: Article
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Using complex-source-point method, it is shown that the linearity polarised TEM01 azimuthal modes from conventional beam wave theory should be replaced by two other sets of azimuthal modes with different polarisation configurations. The difference in frequency for the same-order mode for these two sets is calculated and verified by experiment.
T-cell SC integrator synthesises very large capacitance ratios
- Author(s): P. van Peteghem and W. Sansen
- Source: Electronics Letters, Volume 19, Issue 14, p. 541 –543
- DOI: 10.1049/el:19830367
- Type: Article
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Very large pole/sampling-frequency ratios in SC filters require large capacitance ratios and thus result in inefficient area consumption. The use of a T-cell capacitance network allows one to integrate a very large time constant (VLT) integrator, which is, to the first order, insensitive to op-amp offset.
High-speed planar InP/InGaAs avalanche photodiode fabricated by vapour phase epitaxy
- Author(s): H. Ando ; Y. Yamauchi ; N. Susa
- Source: Electronics Letters, Volume 19, Issue 14, p. 543 –545
- DOI: 10.1049/el:19830368
- Type: Article
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A high-speed planar InP/InGaAs avalanche photodiode (APD) with p--n−-n reach-through structure was realised by vapour phase epitaxy and Zn double diffusion. The criterion for achieving a high-speed response has been revealed. Performance of the InGaAs/InP-APD was confirmed to exceed that for Ge-APD in a 2 Gbit s transmission experiment.
Low insertion-loss, temperature-compensated dielectric filters for microwave integrated circuits
- Author(s): G.B. Morgan and K.W. Davidson
- Source: Electronics Letters, Volume 19, Issue 14, p. 545 –546
- DOI: 10.1049/el:19830369
- Type: Article
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Experimental results are presented for several microstrip dielectric filters which use temperature compensated resonators. The various contributions to the insertion loss are quantified, showing that resonator-resonator coupling losses are about a factor of two times the microstrip-resonator coupling losses. Balanced and unbalanced couplings have been investigated and the effect of temperature is also presented.
Linearly dispersive time-delay control of magnetostatic surface wave by variable ground-plane spacing
- Author(s): Kok Wai Chang ; J.M. Owens ; R.L. Carter
- Source: Electronics Letters, Volume 19, Issue 14, p. 546 –547
- DOI: 10.1049/el:19830370
- Type: Article
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A magnetostatic-surface-wave linearly dispersive delay line with a 500 MHz bandwidth at 3 GHz and a phase error from quadratic of less than 13 degrees has been demonstrated. The device utilises a 3-layer propagation structure (YIG-dielectric ground plane) in which the spacing to ground plane varies along the propagation direction.
CMRR analysis of instrumentation amplifiers
- Author(s): J. Szynowski
- Source: Electronics Letters, Volume 19, Issue 14, p. 547 –549
- DOI: 10.1049/el:19830371
- Type: Article
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A set of the simple and practical expressions for the CMRR of instrumentation amplifiers (IAs) based on 2, 3 and 4 opamps is given. These equations take into account not only mismatch of determined resistors but also the limited value of the CMRR of op-amps used. The derived equations are very useful for tolerance analysis which is shown on the example of the 3-op-amp IA
Biased Gaussian noise source for digital-transmission-system simulations
- Author(s): P.F. Adams
- Source: Electronics Letters, Volume 19, Issue 14, p. 549 –550
- DOI: 10.1049/el:19830372
- Type: Article
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A biased Gaussian source is described for use in simulation studies of digital transmission systems. It enables low error rates due to Gaussian noise plus bounded interferers to be determined much more rapidly than when a true Gaussian source is used.
1.52 μm PSK heterodyne experiment featuring an external cavity diode laser local oscillator
- Author(s): R. Wyatt ; T.G. Hodgkinson ; D.W. Smith
- Source: Electronics Letters, Volume 19, Issue 14, p. 550 –552
- DOI: 10.1049/el:19830373
- Type: Article
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A receiver sensitivity of −59 dBm which is 4 dB from the shot noise limit, has been measured for a 140 Mbit/s PSK heterodyne system operating over 109 km of monomode fibre.
10 GHz active mode-locking of a 1.3 μm ridge-waveguide laser in an optical-fibre cavity
- Author(s): R.S. Tucker ; G. Eisenstein ; I.P. Kaminow
- Source: Electronics Letters, Volume 19, Issue 14, p. 552 –553
- DOI: 10.1049/el:19830374
- Type: Article
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Active mode-locking of a 1.3 μm ridge-waveguide laser in a multimode optical fibre resonator is reported. Transform-limited pulses of 30 ps duration have been generated at repetition rates of up to 10 GHz.
Electro-optic X-switch using single-mode Ti:LiNbO3 channel waveguides
- Author(s): A. Neyer
- Source: Electronics Letters, Volume 19, Issue 14, p. 553 –554
- DOI: 10.1049/el:19830375
- Type: Article
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A new type of single-mode four-port electro-optic switch is investigated. The operation principle is based on the electrically controlled two-mode interference in the intersection region of two crossing single-mode channel waveguides. The switch is analysed numerically by the beam-propagation method, and is realised experimentally by using Ti:LiNbO3 channel waveguides.
100 GHz bandwidth planar GaAs Schottky photodiode
- Author(s): S.Y. Wang and D.M. Bloom
- Source: Electronics Letters, Volume 19, Issue 14, p. 554 –555
- DOI: 10.1049/el:19830376
- Type: Article
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In the letter we report the development and characterisation of a planar-structure GaAs Schottky-barrier photodiode whose response to a mode-locked laser pulse of 600 nm wavelength has a full-width half-maximum of 5.4 ps and a 3 dB bandwidth of 100 GHz.
Helically corrugated circular waveguides as antenna feeders
- Author(s): F. Jecko and A. Papiernik
- Source: Electronics Letters, Volume 19, Issue 14, p. 555 –557
- DOI: 10.1049/el:19830377
- Type: Article
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Rotation of the plane of polarisation of the TE11-mode is predicted and observed in a helically corrugated circular waveguide. Rotation is suppressed by a longitudinal deformation produced on the corrugation. This modified structure can be used as an antenna feeder with low losses.
Complex waves on shielded lossless rectangular dielectric image guide
- Author(s): U. Crombach
- Source: Electronics Letters, Volume 19, Issue 14, p. 557 –558
- DOI: 10.1049/el:19830378
- Type: Article
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Waves with complex propagation constants occur in the modal spectrum of shielded rectangular dielectric image guides, although the guide is assumed to be lossless. Dispersion characteristics are presented, calculated by a rigorous mode-matching technique. Plots of power flow show that the energy supported by such a complex wave returns to the plane of excitation.
Room-temperature optically triggered bistability in twin-stripe lasers
- Author(s): I.H. White ; J.E. Carroll ; R.G. Plumb
- Source: Electronics Letters, Volume 19, Issue 14, p. 558 –560
- DOI: 10.1049/el:19830379
- Type: Article
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Room-temperature optically triggered bistability in semiconductor lasers is reported for the first time. The optically bistable element consists of a twin-stripe laser. The bistable ‘switch-on’ and ‘switch-off’ are achieved by injecting light from two other twin-stripe lasers. By using twin-stripe lasers to provide the triggering pulses, no temperature control is required to match the lasing wavelengths. The optical bistability appears to be stable for at least as long as 300 ns, this time being the longest current bias pulse used by the authors.
Erratum: Fundamental mode waveguide at submillimetre wavelengths
- Author(s): A.R. Gillespie and A. Schulz
- Source: Electronics Letters, Volume 19, Issue 14, page: 560 –560
- DOI: 10.1049/el:19830380
- Type: Article
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Erratum: Mode analysis of optical fibres using computer-generated matched filters
- Author(s): H.O. Bartelt ; A.W. Lohmann ; W. Freude ; G.K. Grau
- Source: Electronics Letters, Volume 19, Issue 14, page: 560 –560
- DOI: 10.1049/el:19830381
- Type: Article
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