Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 19, Issue 13, 23 June 1983
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Volume 19, Issue 13
23 June 1983
Lasing characteristics of improved GaInAsP/InP surface emitting injection lasers
- Author(s): K. Iga ; H. Soda ; T. Terakado ; S. Shimizu
- Source: Electronics Letters, Volume 19, Issue 13, p. 457 –458
- DOI: 10.1049/el:19830311
- Type: Article
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The letter presents a surface-emitting GaInAsP/InP injection laser with 7 μm cavity length operating at 1.30 μm of wavelength. The threshold was as low as 50 mA at 77 K. The device operated up to 140 K with one single longitudinal mode and small wavelength change (0.64 Å/degree). The near-field diameter was 9 μm and the far-field angle (FWHM) was 9°. The polarisation was linear.
1.3 μm/1.5 μm bidirectional WDM optical-fibre transmission system experiment at 144 Mbit/s
- Author(s): R.J.S. Bates ; J.D. Spalink ; S.J. Butterfield ; J. Lipson ; C.A. Burrus ; T.P. Lee ; R.A. Logan
- Source: Electronics Letters, Volume 19, Issue 13, p. 458 –459
- DOI: 10.1049/el:19830312
- Type: Article
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Results are reported of a 1.3 μm/1.5 μm bidirectional WDM transmission system experiment operating at 144 Mbit/s over 58 km of cabled single-mode fibre. Regenerators used Bell Laboratories-developed 1.3 and 1.5 μm InGaAsP semiconductor lasers, InGaAs PIN diodes, microwave monolithic amplifiers and optical bidirectional couplers.
InP MIS transistors with grown-in sulphur dielectric
- Author(s): G. Post ; P. Dimitriou ; A. Scavennec ; N. Duhamel ; A. Mircea
- Source: Electronics Letters, Volume 19, Issue 13, p. 459 –461
- DOI: 10.1049/el:19830313
- Type: Article
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We report the first experimental results on accumulation layer InP MISFETs where the gate dielectric is grown into the substrate by chemical reaction with sulphur. These MIS structures have very little hysteresis and very high transistor transconductances.
Novel design of travelling-wave FET
- Author(s): Ce-Jun Wei
- Source: Electronics Letters, Volume 19, Issue 13, p. 461 –463
- DOI: 10.1049/el:19830314
- Type: Article
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In the letter we propose a novel travelling-wave FET, in which an additional image gate is placed beside the drain of the FET as a phase velocity synchroniser. Small-signal analysis is given in the light of coupled wave theory and shows that the device is capable of high gain and wide bandwidth amplification. The easy adjustment of phase synchronisation and compability of the conventional FET fabrication technique make it promising for high-frequency distributed amplification.
Ultra-long-range OTDR in single-mode fibres at 1.3 μm
- Author(s): M.P. Gold and A.H. Hartog
- Source: Electronics Letters, Volume 19, Issue 13, p. 463 –464
- DOI: 10.1049/el:19830315
- Type: Article
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A single-mode optical time-domain reflectometer (OTDR) operating at a wavelength of 1.3 μm with a dynamic range in excess of 26 dB one way is reported. The equipment incorporates a semiconductor laser source and a new low-noise optical receiver design utilising a PIN diode detector and a transimpedance amplifier.
Localisation of defects on SOI films via selective recrystallisation using halogen lamps
- Author(s): D. Bensahel ; M. Haond ; D.P. Vu ; J.P. Colinge
- Source: Electronics Letters, Volume 19, Issue 13, p. 464 –466
- DOI: 10.1049/el:19830316
- Type: Article
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Selective annealing by means of an incoherent light system has been employed to grow single-crystal Si on oxide. This technique allows control of the location of the remaining defects (subgrain boundaries) in the <100> recrystallised film.
SAW convolvers using the transverse-horizontal bilinear field
- Author(s): T. Monks ; E.G.S. Paige ; R.C. Woods
- Source: Electronics Letters, Volume 19, Issue 13, p. 466 –467
- DOI: 10.1049/el:19830317
- Type: Article
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–467
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Conventional SAW convolvers rely on the transverse-vertical polarisation field induced by crystal nonlinearity in the presence of two contraflow input waves. The letter presents results for single-track SAW convolvers fabricated on LiNbO3 using the transverse-horizontal (in-plane) electric polarisation. The new electrode arrangement involved reduces the possibility of unwanted 'fold-over convolution from fabrication defects and increases design flexibility.
Theoretical model for calculating rain-induced crosspolarisation
- Author(s): F. Moupfouma
- Source: Electronics Letters, Volume 19, Issue 13, p. 467 –469
- DOI: 10.1049/el:19830318
- Type: Article
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A mathematical model for calculating rain-induced depolarisation on microwave links is described. It is carried out by using a Gaussian distribution of canting angle and use both mean and standard deviation of each drop-size canting angle.
Detection of DC and low-frequency AC magnetic fields using an all single-mode fibre magnetometer
- Author(s): A.D. Kersey ; M. Corke ; D.A. Jackson ; J.D.C. Jones
- Source: Electronics Letters, Volume 19, Issue 13, p. 469 –471
- DOI: 10.1049/el:19830319
- Type: Article
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A technique for the determination of weak DC and low-frequency AC magnetic fields using a single-mode-fibre magnetometer is described. The technique utilises the dependence between the AC responsitivity and bias field to detect small changes in the bias field. Detection sensitivities in the milli-gauss/metre region have been obtained using a bulk nickel magnetostrictive element with microgauss sensitivities predicted for certain types of metallic glass.
All-fibre ‘michelson’ thermometer
- Author(s): M. Corke ; A.D. Kersey ; D.A. Jackson ; J.D.C. Jones
- Source: Electronics Letters, Volume 19, Issue 13, p. 471 –473
- DOI: 10.1049/el:19830320
- Type: Article
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An all single-mode-fibre ‘Michelson’ temperature sensor is described utilising a signal recovery scheme based on laser frequency ramping with digital phase tracking. A sensitivity of 320 rad °C−1 m−1 was obtained when a steel probe was used as the sensing element.
TDEG in In0.53Ga0.47As-InP heterojunction grown by chloride VPE
- Author(s): J. Komeno ; M. Takikawa ; M. Ozeki
- Source: Electronics Letters, Volume 19, Issue 13, p. 473 –474
- DOI: 10.1049/el:19830321
- Type: Article
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We report the first successful growth of selectively doped In0.53Ga0.47As-InP hcterojunctions by the chloride vapour phase epitaxy, and the observation of TDEG with a maximum electron mobility of 106 000 cm2 V−1 s−1 at 4.2 K.
Contacts between amorphous metals and semiconductors
- Author(s): M.J. Kelly ; A.G. Todd ; M.J. Sisson ; D.K. Wickenden
- Source: Electronics Letters, Volume 19, Issue 13, p. 474 –476
- DOI: 10.1049/el:19830322
- Type: Article
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p.
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The letter describes the relative enhancement of the thermal stability of Schottky barriers on both silicon and gallium arsenide that can be achieved using thin films of amorphous Ni-Nb and Ta-Ir alloy, the latter alloy being among the most stable fabricated to date, with less than 5% degradation of the barrier height after 2.5 h at 500°C.
Systolic processor for computing the Wigner distribution
- Author(s): T.S. Durrani ; R. Chapman ; T. Willey
- Source: Electronics Letters, Volume 19, Issue 13, p. 476 –477
- DOI: 10.1049/el:19830323
- Type: Article
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p.
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–477
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The letter presents a systolic architecture for computing the two-dimensional Wigner distribution. The system is based on exploiting a characterising array for the data and cordic cells to achieve structural modularity and parallelism.
Equivalence between sinusoidal roll-off and trapezoidal response functions
- Author(s): X.C. Luo
- Source: Electronics Letters, Volume 19, Issue 13, p. 477 –479
- DOI: 10.1049/el:19830324
- Type: Article
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p.
477
–479
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The equivalence between sinusoidal roll-off and trapezoidal response functions has been analysed in both frequency and time domains. A constant c = 0.76 is found for the minimax equivalence and a simple relationship between the two functions has been given.
Ultrafast GaAs microwave PIN diode
- Author(s): R. Tayrani and R.W. Glew
- Source: Electronics Letters, Volume 19, Issue 13, p. 479 –480
- DOI: 10.1049/el:19830325
- Type: Article
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–480
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This letter describes what is believed to be the first successful realisation of GaAs PIN diodes. The vertical structure was grown on an n+ substrate by MOCVD of a 2 μm, 1015 cm−3 unintentionally doped n− layer followed by a 0.3 μm, 4×1019 cm−3 Zn doped p+ layer. The isolation and insertion loss of a single shunt-mounted device are typically −27 dB and 0.7 dB, respectively. The switching speed of the device was measured to be less than 1 ns.
Microwave-frequency response of an optical-fibre delay-line filter
- Author(s): S.A. Newton and P.S. Cross
- Source: Electronics Letters, Volume 19, Issue 13, p. 480 –481
- DOI: 10.1049/el:19830326
- Type: Article
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–481
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The frequency response of a single-mode fibre recirculating delay-line filter has been measured from 0 to 18 GHz using a broadband measurement system that includes an inteferometric waveguide modulator and a high-speed photodetector. An optical-fibre notch filter having a fundamental passband at 740 MHz exhibited 23 overtones that were uniform to within ±1.5 dB over the entire measurement range.
Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1.5 μm
- Author(s): M. Razeghi ; P. Hirtz ; R. Blondeau ; B. de Cremoux ; J.P. Duchemin
- Source: Electronics Letters, Volume 19, Issue 13, p. 481 –483
- DOI: 10.1049/el:19830327
- Type: Article
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We report on the aging of a continuous-wave (CW) GaInAsP/InP double-heterostructure laser emitting at 1.5 μm, grown for the first time by MOCVD. This device has been operated at room temperature for more than 104 h without significant degradation.
Regrowth of amorphous layers in silicon-on-insulator structures formed by the implantation of oxygen
- Author(s): P.L.F. Hemment ; E.A. Maydell-Ondrusz ; K.G. Stephens ; P.D. Scovell
- Source: Electronics Letters, Volume 19, Issue 13, p. 483 –485
- DOI: 10.1049/el:19830328
- Type: Article
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Synthesised silicon-on-insulator structures have been formed and implanted with 1×1016 As+ cm−2 at 40 keV. The regrowth kinetics of the amorphised layer, which also contains lattice defects and excess oxygen, has been studied by Rutherford backscattering. The regrowth of the layer occurs at a mean rate of 13 Å min−1 at 500°C with an activation energy of 2.7±0.2 eV. This experiment further demonstrates the suitability of these synthesised structures as a direct replacement for bulk silicon in VLSI technology.
Joint characteristics between polarisation-maintaining single-mode fibres
- Author(s): H. Tokiwa ; K. Mochizuki ; H. Wakabayashi
- Source: Electronics Letters, Volume 19, Issue 13, p. 485 –486
- DOI: 10.1049/el:19830329
- Type: Article
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The jointing characteristics of polarisation-maintaining single-mode (PMSM) fibres are described. The power coupling loss and extinction ratio due to angular misalignment of the main principal axis at the fibre joint are measured.
Quantisation effects in second-order wave digital filters
- Author(s): E.S.K. Liu and L.E. Turner
- Source: Electronics Letters, Volume 19, Issue 13, p. 487 –488
- DOI: 10.1049/el:19830330
- Type: Article
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p.
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A novel quantisation strategy is found for the second-order wave digital filter proposed by Verkroost so that the filter possesses near-optimal noise performance and only exhibits very low amplitude limit cycles under constant input conditions.
Stable single-longitudinal-mode operation under high-speed direct modulation in cleaved-coupled-cavity GaInAsP semiconductor lasers
- Author(s): W.T. Tsang ; N.A. Olsson ; R.A. Logan
- Source: Electronics Letters, Volume 19, Issue 13, p. 488 –490
- DOI: 10.1049/el:19830331
- Type: Article
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We describe a new self-aligned coupled-cavity laser formed by a simple variation of the usual cleaving procedures. Such cleaved-coupled-cavity (CCC or C3) lasers were highly single-longitudinal-moded with spectral and stability as good as those obtained from frequency-selective feedback lasers such as distributed feedback and distributed Bragg reflector lasers under high-speed direct modulation.
Application of sine transform in image processing
- Author(s): R.J. Clarke
- Source: Electronics Letters, Volume 19, Issue 13, p. 490 –491
- DOI: 10.1049/el:19830332
- Type: Article
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The sine transform has frequently been suggested as an alternative to the more commonly used Walsh-Hadamard and discrete cosine transforms for the purpose of image coding. It is demonstrated here that there are fundamental theoretical drawbacks to the transform which result in poor performance when it is employed in a practical coding situation.
Microwave signal generation with injection-locked laser diodes
- Author(s): L. Goldberg ; H.F. Taylor ; J.F. Weller ; D.M. Bloom
- Source: Electronics Letters, Volume 19, Issue 13, p. 491 –493
- DOI: 10.1049/el:19830333
- Type: Article
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Heterodyne detection of the light from two slave lasers injection locked to FM sidebands of a modulated master laser is used to generate a narrowband microwave signal at 10.5 GHz.
Electronic frequency tuning of TRAPATT oscillators
- Author(s): N. Nazoa-Ruiz and C.S. Aitchison
- Source: Electronics Letters, Volume 19, Issue 13, p. 493 –495
- DOI: 10.1049/el:19830334
- Type: Article
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Experimental results of a novel electronically tunable microstrip Trapatt oscillator employing varactor diodes arc presented. A tuning range of 20 MHz, limited by the low voltage breakdown of the varactor diodes and the number of tuning stages used, for an oscillator with a centre frequency of 1.6 GHz and an output power of 9 W, was observed and found to be in good agreement with theory.
SC integrator for high-frequency applications
- Author(s): G. Fischer and G.S. Moschytz
- Source: Electronics Letters, Volume 19, Issue 13, p. 495 –496
- DOI: 10.1049/el:19830335
- Type: Article
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The time discrete integrator is a basic building block for a wide range of SC networks. Owing to the finite bandwidth of the amplifier, most of these networks are limited to applications in the audio frequency range. To overcome this restriction, a simple modification of the integrator circuit is presented, which allows the realisation of integrator-based SC networks at frequencies much higher than the audio range.
Integration decrement method for measuring Q of microwave resonators
- Author(s): I. Kneppo
- Source: Electronics Letters, Volume 19, Issue 13, p. 496 –498
- DOI: 10.1049/el:19830336
- Type: Article
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The integration of the exponential decay curve of the damped oscillating microwave resonator is proposed as a tool to measure the resonator quality factor. This modification of the decrement method was verified experimentally in the X-band test Set.
Practical low-noise quasiparticle receiver for 80–100 GHz
- Author(s): R. Blundell ; K.H. Gundlach ; E.J. Blum
- Source: Electronics Letters, Volume 19, Issue 13, p. 498 –499
- DOI: 10.1049/el:19830337
- Type: Article
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We have tested a heterodyne receiver for millimetre-wave radio astronomy, which uses a quasiparticle mixer with junctions of Pb/Bi/In-oxide-Pb/Bi. A receiver noise temperature of around 100 K double sideband has been measured with a number of different junctions. For one junction, the best receiver temperature obtained was 73 K, and the mixer conversion loss was less than 5.8 dB double sideband.
Method to sequentially address a large memory, suitable for LSI implementation
- Author(s): R. Sundblad
- Source: Electronics Letters, Volume 19, Issue 13, p. 499 –500
- DOI: 10.1049/el:19830338
- Type: Article
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A method to sequentially generate addresses to an external memory is described. The method which is based on a PRBS-generator minimises area and power consumption and maximises speed when used in IC design. The method has been tested in a dynamic memory-controller chip which was fabricated in metal gate CMOS technology.
Really prime classes implying only really prime classes
- Author(s): G.V. Russo ; G. Palama ; A.C. Neve
- Source: Electronics Letters, Volume 19, Issue 13, p. 500 –502
- DOI: 10.1049/el:19830339
- Type: Article
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A more extensive definition of the really excluded compatibility classes is given such that each member of the prime closed sets of compatibility classes is a really prime class.
Erratum: Switched-capacitor building blocks for analogue signal processing
- Author(s): F. Maloberti
- Source: Electronics Letters, Volume 19, Issue 13, page: 502 –502
- DOI: 10.1049/el:19830340
- Type: Article
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Erratum: Stabilisation of 2-D digital filters via Hilbert transform
- Author(s): P.S. Reddy and H.S.N. Murthy
- Source: Electronics Letters, Volume 19, Issue 13, page: 502 –502
- DOI: 10.1049/el:19830341
- Type: Article
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Erratum: Linear system reduction by continued-fraction expansion about s = 0 and s = a alternately
- Author(s): T.N. Lucas
- Source: Electronics Letters, Volume 19, Issue 13, page: 502 –502
- DOI: 10.1049/el:19830342
- Type: Article
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