Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 18, Issue 7, 1 April 1982
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Volume 18, Issue 7
1 April 1982
Transmission-line model analysis of a lossy rectangular microstrip patch
- Author(s): G. Dubost
- Source: Electronics Letters, Volume 18, Issue 7, p. 281 –282
- DOI: 10.1049/el:19820192
- Type: Article
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p.
281
–282
(2)
A theoretical method, namely transmission-line model analysis, is outlined to explain the radiation conductance, the bandwidth and the efficiency of a lossy rectangular microstrip patch. We are able to express the characteristics by simple formulas and we obtain good agreement between theoretical and experimental results.
Implantation annealing by thermal imaging
- Author(s): D. Eirug Davies and E.F. Kennedy
- Source: Electronics Letters, Volume 18, Issue 7, p. 282 –284
- DOI: 10.1049/el:19820193
- Type: Article
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p.
282
–284
(3)
Elliptical mirrors have been used to image incoherent light sources onto silicon for the purpose of annealing implanted layers. It is found that ∼1 s of illumination is sufficient for annealing areas that approximate the dimensions of the source. Low-dose boron implants are found to be fully activated without any significant diffusive redistribution. Amorphous layers produced by implanting arsenic can be annealed to exhibit minimum yields of ∼4% from back-scattering and give sheet resistivities comparable with thermal annealed values. It is envisioned that the annealing can be expanded to large areas and throughputs by physically moving wafers through the 2 in-long heating strip produced by the present configuration.
Effects of parasitics in lowpass elliptic filters for mic
- Author(s): F. Giannini ; M. Salerno ; R. Sorrentino
- Source: Electronics Letters, Volume 18, Issue 7, p. 284 –285
- DOI: 10.1049/el:19820194
- Type: Article
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p.
284
–285
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The possibility of realising 5th-or higher-order Cauer-Chebyshev lowpass filters by cascading rectangular microwave integrated structures is demonstrated. A new equivalent circuit of the rectangular element is introduced which accounts for the parasitic inductances due to higher-order modes. A simple adjusting procedure is developed which improves the passband behaviour of the filters, taking advantage of the presence of the parasitics.
Electronically scanned cmt detector array for the 8–14 μm band
- Author(s): R.A. Ballingall ; I.D. Blenkinsop ; C.T. Elliott ; I.M. Baker ; D. Jenner
- Source: Electronics Letters, Volume 18, Issue 7, p. 285 –287
- DOI: 10.1049/el:19820195
- Type: Article
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p.
285
–287
(3)
A cadmium-mercury-telluride photovoltaic hybrid array of 1024 elements is described. The device operates in the 8–14 μm band and is electronically scanned by means of MOS silicon switches. An example of a ‘staring’ image obtained with the device is shown.
Amplitude and phase scintillation measurements on 8.2 km line-of-sight path at 30 GHz
- Author(s): M.H.A.J. Herben
- Source: Electronics Letters, Volume 18, Issue 7, p. 287 –289
- DOI: 10.1049/el:19820196
- Type: Article
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p.
287
–289
(3)
The letter summarises results of amplitude and phase scintillation measurements at 30 GHz on an 8.2 km line-of-sight path in the Netherlands. The measured results compare favourably with those obtained from weak-scattering theory.
Bidirectional ripple clock scheme for serial-parallel-serial charge-coupled devices
- Author(s): M.J.M. Pelgrom and L.J.M. Esser
- Source: Electronics Letters, Volume 18, Issue 7, p. 289 –290
- DOI: 10.1049/el:19820197
- Type: Article
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p.
289
–290
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A new clocking scheme is presented for operating the parallel part of serial-parallel-serial charge-coupled device shift registers. This bidirectional clocking scheme allows charge movements in two directions without losing the bit-density advantages of ordinary ripple clocking. The bidirectional ripple clock requires less clock lines and no process modifications.
New method for determining distribution of interface states in an MIS system
- Author(s): E. Yamaguchi and T. Kobayashi
- Source: Electronics Letters, Volume 18, Issue 7, p. 290 –292
- DOI: 10.1049/el:19820198
- Type: Article
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p.
290
–292
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A general formula for the capacitance transient response in an MIS system was developed in order to apply the ICTS (isothermal capacitance transient spectroscopy) technique to an MIS diode. A new spectroscopic measurement method for determining the distribution of interface states is proposed and applied to an InAs MIS diode.
Megahertz linewidth from a 1.5 μm semiconductor laser with HeNe laser injection
- Author(s): R. Wyatt ; D.W. Smith ; K.H. Cameron
- Source: Electronics Letters, Volume 18, Issue 7, p. 292 –293
- DOI: 10.1049/el:19820199
- Type: Article
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p.
292
–293
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The linewidth of a 1.5 μm semiconductor laser has been reduced from > 1 GHz to < 1.5 MHz by injection locking the laser to the low-power narrow-linewidth output from an HeNe laser operating at 1.523 μm. A collimated-beam power of 750 μW was obtained in the injection-locked semiconductor laser mode.
Modified ebers-moll model
- Author(s): H. Kuntman
- Source: Electronics Letters, Volume 18, Issue 7, p. 293 –294
- DOI: 10.1049/el:19820200
- Type: Article
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p.
293
–294
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A new modified Ebers-Moll model is described. The model represents a bipolar transistor accurately in the active operating region at low frequencies. It is therefore suitable for computer-aided nonlinear distortion analysis of transistor amplifiers.
Equivalent circuit model for arrays of square loops
- Author(s): R.J. Langley and E.A. Parker
- Source: Electronics Letters, Volume 18, Issue 7, p. 294 –296
- DOI: 10.1049/el:19820201
- Type: Article
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p.
294
–296
(3)
Square-loop arrays are of interest as frequency selective surfaces. Experimental results for these arrays are presented, and a simple equivalent circuit model is described which predicts the plane-wave transmission characteristics for normal incidence. These elements are a new member of the group of arrays for which simple equivalent circuits are available.
FIR digital filters with simultaneous conditions on amplitude and delay
- Author(s): H. Baher
- Source: Electronics Letters, Volume 18, Issue 7, p. 296 –297
- DOI: 10.1049/el:19820202
- Type: Article
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p.
296
–297
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A general analytic technique is given for the design of FIR digital filters with simultaneous conditions on both the amplitude and delay responses. It is shown that phase linearity can be maintained only within the passband, resulting in increased amplitude selectivity as compared with filters with exact linear phase at all frequencies.
Variation of minority carrier lifetime with level of injection in p-n-junction devices
- Author(s): S.K. Agarwal ; S.C. Jain ; S. Harsh
- Source: Electronics Letters, Volume 18, Issue 7, p. 298 –299
- DOI: 10.1049/el:19820203
- Type: Article
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p.
298
–299
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Minority-carrier lifetime as a function of level of injection has been measured for a number of Si and Ge p-n-junction diodes using reverse recovery and forward current-induced voltage decay methods. It is found that the lifetime always increases with injection level if the effect of the finite thickness of the base of the diode is taken into account while interpreting the experimental results. The decrease in the life-time values reported in the literature appears to be due to erroneous interpretation of the experimental data.
GaAs 256-bit static RAM
- Author(s): K. Ohwada ; M. Ino ; T. Mizutani ; K. Asai
- Source: Electronics Letters, Volume 18, Issue 7, p. 299 –300
- DOI: 10.1049/el:19820204
- Type: Article
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p.
299
–300
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A GaAs 256×1-bit static RAM with 2000 FETs organised in E/D-type DCFL circuits was successfully fabricated. A planar device structure was realised by using selective ion implantation and dielectric intermediate lift-off technology. The access time and the power dissipation were 50 ns and 9.4 mW, respectively.
High-frequency intensity noise behaviour during accelerated life tests of narrow-stripe proton-isolated DH AlGaAs lasers for optical communications
- Author(s): J.W.M. Biesterbos and H.W.M. Salemink
- Source: Electronics Letters, Volume 18, Issue 7, p. 300 –302
- DOI: 10.1049/el:19820205
- Type: Article
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p.
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–302
(3)
An investigation has been made into the influence of life testing of narrow-stripe proton-isolated DH AlGaAs on their output fluctuation spectra in the range 0.1–1.6 GHz. The lasers show intrinsic optical fluctuation behaviour before life testing. The experiments indicate that this behaviour is maintained for facet-coated lasers during at least 5000 h of accelerated life testing at elevated temperatures.
Current-induced frequency modulation in diode lasers
- Author(s): A. Dandridge and L. Goldberg
- Source: Electronics Letters, Volume 18, Issue 7, p. 302 –304
- DOI: 10.1049/el:19820206
- Type: Article
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p.
302
–304
(3)
A new technique for measuring current-induced frequency modulation in diode lasers is described. Measurements in the modulation frequency range of 108 to 10−2 Hz were made on four different laser structures. The method maintains its accuracy at low modulation frequencies.
Intensity fluctuations in longitudinal modes of a nearly single-mode AlGaAs laser
- Author(s): I. Joindot and C. Boisrobert
- Source: Electronics Letters, Volume 18, Issue 7, p. 304 –305
- DOI: 10.1049/el:19820207
- Type: Article
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p.
304
–305
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The behaviour of the relative intensity noise in each longitudinal mode of a CW DH AlGaAs laser exhibiting mode jumps is observed and theoretically explained. The stabilisation of the amplitude fluctuations of the main mode due to the gain saturation which could be expected when the injection current increases is cancelled by the shift of the maximum of the gain spectrum.
Oxidation of (n)-InP by nitric acid
- Author(s): C. Michel and J.J. Ehrhardt
- Source: Electronics Letters, Volume 18, Issue 7, p. 305 –307
- DOI: 10.1049/el:19820208
- Type: Article
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p.
305
–307
(3)
Au-oxide-semiconductor barriers have been studied in n-type InP. A comparison was made, using the ESCA technique and current/voltage characteristics, between different natural oxides obtained with nitric acid as reagent. With regard to the ideality factor, barrier height and oxide resistivity, the best oxide is obtained with acid in a gaseous phase, and the XPS spectra give an interpretation of the oxide composition.
Waveguide/resonant-disc circuits for millimetre-wave devices
- Author(s): W.H. Haydl ; R. Bosch ; J. Rüdiger
- Source: Electronics Letters, Volume 18, Issue 7, p. 307 –308
- DOI: 10.1049/el:19820209
- Type: Article
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p.
307
–308
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Bias circuits using resonant discs have been employed for millimetre-wave transferred-electron (TE) diodes operating at their second or third harmonic frequencies in the V (50–75 GHz) and W (75–110 GHz) bands. It is shown that this type of circuit exhibits resonances at frequencies in the lower millimetre-wave range, corresponding to the fundamental oscillation frequency of diodes typically used. In addition, the circuit provides efficient coupling to the waveguide circuit at the higher (harmonic) operating frequency. By tuning the fundamental oscillation frequency of a number of resonant discs, the power-frequency spectrum of the TE device can be determined, which is demonstrated for a device with its maximum third-harmonic power output at 94 GHz.
Direct measurement of FM noise in 80 GHz solid-state oscillators
- Author(s): T.J. Simmons and D.C. Smith
- Source: Electronics Letters, Volume 18, Issue 7, p. 308 –309
- DOI: 10.1049/el:19820210
- Type: Article
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p.
308
–309
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A technique for the measurement of FM noise in W-band oscillators is described. The method is ‘direct’, since it makes use of a tuned frequency discriminator operating at the fundamental oscillator frequency. The equipment is compared with other types of noise measurement systems, and the important factors affecting sensitivity are noted. Measurements of the FM noise performance of oscillators utilising GaAs TEOs and Si impatts are presented.
Mobility calculation of two-dimensional electron gas in GaAs/AlGaAs heterostructure at 4.2 K
- Author(s): Y. Takeda ; H. Kamei ; A. Sasaki
- Source: Electronics Letters, Volume 18, Issue 7, p. 309 –311
- DOI: 10.1049/el:19820211
- Type: Article
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p.
309
–311
(3)
Electron concentration and undoped AlGaAs spacer thickness dependencies of the mobility of a two-dimensional electron gas in a GaAs/AlGaAs single heterostructure are calculated at 4.2 K. The results predict extremely high electron mobility in this structure and agree quite well with very recent experimental data.
Nonperiodic sampling and model matching
- Author(s): M. de la Sen
- Source: Electronics Letters, Volume 18, Issue 7, p. 311 –312
- DOI: 10.1049/el:19820212
- Type: Article
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p.
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–312
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It is shown that the compensator matrices in matching problems may be obtained from a system of equations using arbitrary sampling on the impulse-response matrices of both the given system and its reference model. The sampling is used to achieve an acceptable transmission of the measuring errors.
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