Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 18, Issue 6, 18 March 1982
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 18, Issue 6
18 March 1982
Implementation of signal processing functions using 1-bit systolic arrays
- Author(s): J.V. McCanny and J.G. McWhirter
- Source: Electronics Letters, Volume 18, Issue 6, p. 241 –243
- DOI: 10.1049/el:19820166
- Type: Article
- + Show details - Hide details
-
p.
241
–243
(3)
The use of systolic arrays of 1-bit cells to implement a range of important signal processing functions is demonstrated. Two examples, a pipelined multiplier and a pipelined bit-slice transform circuit, are given. This approach has many important implications for silicon technology, and these are outlined briefly.
Semiconductor alloy resonator-type HF isolators
- Author(s): L. Laurinavičius and R. Tolutis
- Source: Electronics Letters, Volume 18, Issue 6, p. 243 –244
- DOI: 10.1049/el:19820167
- Type: Article
- + Show details - Hide details
-
p.
243
–244
(2)
The isolators with helicon wave resonators made from doped n-InSb, CdxHg1−xTe and Bi1−xSbx are shown to widen the operating temperature range, to decrease the magnet system dimensions and to decrease the forward loss to 1.5 dB. The ranges of operating frequencies and temperatures for various types of resonators are discussed.
Technique for reducing spatial and wavelength variations of launch spot in fibre attenuation measurements
- Author(s): A.B. Sharma ; M. Lähteenoja ; S.J. Halme ; E.J.R. Hubach
- Source: Electronics Letters, Volume 18, Issue 6, p. 244 –246
- DOI: 10.1049/el:19820168
- Type: Article
- + Show details - Hide details
-
p.
244
–246
(3)
A launching technique based on the use of a large step-index rod with a ground end face is described. Experimental results indicate a significant reduction in spatial and wavelength variations. Based on theoretical considerations, the resultant attenuation error in interlaboratory experiments is estimated to be about ± 0.03 dB.
Equivalence of two designs of bilinear switched-capacitor ladder filters
- Author(s): C.J. Wellekens
- Source: Electronics Letters, Volume 18, Issue 6, p. 246 –247
- DOI: 10.1049/el:19820169
- Type: Article
- + Show details - Hide details
-
p.
246
–247
(2)
Two design methods of switched-capacitor filters are shown to be equivalent. They are due to Lee et al. and to Martin and Sedra. Both are based on an LC ladder filter by stimulating the node voltages.
New method for precise characterisation of multimode optical fibres
- Author(s): A. Barthelemy ; P. Facq ; C. Froehly ; J. Arnaud
- Source: Electronics Letters, Volume 18, Issue 6, p. 247 –249
- DOI: 10.1049/el:19820170
- Type: Article
- + Show details - Hide details
-
p.
247
–249
(3)
It is shown experimentally that short samples (about 1 m) of multimode optical fibres can be characterised by measuring the times of flight of tubular modes. There is fair agreement between measured and calculated values.
Determination of material characteristics of bleached photographic emulsions used in volume phase holography
- Author(s): R.R.A. Syms and L. Solymar
- Source: Electronics Letters, Volume 18, Issue 6, p. 249 –251
- DOI: 10.1049/el:19820171
- Type: Article
- + Show details - Hide details
-
p.
249
–251
(3)
The intensity of the light transmitted through a volume holographic grating is measured as a function of incident angle. Material parameters are derived by fitting a theoretical curve to the experimental results.
Lloyd'S Mirror Interference in a medium—a new method for determining photoelastic index variation
- Author(s): Hong-Du Liu and Zhe-Chuan Feng
- Source: Electronics Letters, Volume 18, Issue 6, p. 251 –252
- DOI: 10.1049/el:19820172
- Type: Article
- + Show details - Hide details
-
p.
251
–252
(2)
We proposed a new method of Lloyd's mirror interference in a medium for determining the photoelastic index variation. The experimental results for the masked thermal oxidised GaAs samples agree with the theoretical calculations within an order of magnitude.
New wideband high-gain stripline planar array for 12 GHz satellite TV
- Author(s): E. Rammos
- Source: Electronics Letters, Volume 18, Issue 6, p. 252 –253
- DOI: 10.1049/el:19820173
- Type: Article
- + Show details - Hide details
-
p.
252
–253
(2)
A new type of stripline planar array has been studied for 12 GHz satellite TV reception. A 16-element experimental antenna (dimensions∽98×98×18 mm3), using a stripline corporate feed, presents a 2 : 1 VSWR bandwidth of over 2 GHz and a gain higher than 20.6 dBi in the 11.7–12.5 GHz bandwidth.
Effects of filtering on statistics of rain-induced fade durations
- Author(s): E. Matricciani
- Source: Electronics Letters, Volume 18, Issue 6, p. 253 –255
- DOI: 10.1049/el:19820174
- Type: Article
- + Show details - Hide details
-
p.
253
–255
(3)
Time series of rain attenuation on a slant path at 11.6 GHz are analysed with two digital filters to show how they affect the statistics of fade durations. It is found that their influence is strong for the usual process considered in literature and it is shown how to take care of such effects. It also discusses a definition of the process which is much less sensitive to filtering. The first process provides data to plan telecommunications satellites with a common onboard resource, and the latter is useful for the distinction between quality and reliability criteria.
Extension of RSA crypto-structure: a Galois approach
- Author(s): D.W. Kravitz and I.S. Reed
- Source: Electronics Letters, Volume 18, Issue 6, p. 255 –256
- DOI: 10.1049/el:19820175
- Type: Article
- + Show details - Hide details
-
p.
255
–256
(2)
The Euler totient function and Euler-Fermat theorem utilised in the RSA scheme are extended from the integers to polynomials over finite fields. The new scheme is suited for both privacy and authentication implementations, as is its predecessor. The security of the system rests in part on the difficulty of determining the degrees of the irreducible factors of a high-degree polynomial.
20-Channel micro-optic grating demultiplexer for 1.1–1.6 μm band using a small focusing parameter graded-index rod lens
- Author(s): M. Seki ; K. Kobayashi ; Y. Odagiri ; M. Shikada ; T. Tanigawa ; R. Ishikawa
- Source: Electronics Letters, Volume 18, Issue 6, p. 257 –258
- DOI: 10.1049/el:19820176
- Type: Article
- + Show details - Hide details
-
p.
257
–258
(2)
A 20-channel micro-optic grating demultiplexer with a single-mode input fibre has been developed for 1.1–1.6 μm band using a newly developed graded-index (Selfoc) rod lens with a small focusing parameter and an Si-etched reflection grating. Insertion losses were 1.9 to 3.5 dB. Isolation between adjacent channels was less than −20 dB.
Short-channel GaAs FET fabricated like a MESFET but operating like a JFET
- Author(s): H. Morkoç
- Source: Electronics Letters, Volume 18, Issue 6, p. 258 –259
- DOI: 10.1049/el:19820177
- Type: Article
- + Show details - Hide details
-
p.
258
–259
(2)
Normally-on GaAs field-effect transistors (FETs) having 1 μm gate lengths and 4 μm channel lengths were fabricated in structures grown by molecular beam epitaxy (MBE). The unique part of this device is the very thin p+/n+ structure used to replace the conventional Schottky barriers. The device fabrication procedure is identical to that of a Schottky barrier FET (MESFET), but the devices exhibit characteristics similar to that of a junction field-effect transistor (JFET). This new device, the ‘camel diode gate FET’, is expected to have applications in both logic and power devices.
Lateral pnp GaAs bipolar transistor prepared by ion implantation
- Author(s): H. Kräutle ; P. Narozny ; H. Beneking
- Source: Electronics Letters, Volume 18, Issue 6, p. 259 –260
- DOI: 10.1049/el:19820178
- Type: Article
- + Show details - Hide details
-
p.
259
–260
(2)
A lateral pnp bipolar transistor structure has been realised in n-GaAs material using ion implantation. Be ions have been implanted to form the emitter and collector. Proton implantation has been used to reduce the area of the parasitic emitter-substrate diode. First results of a transistor with a current gain of 0.5 are shown.
Q-band (26–40 GHz) GaAs FET single-stage amplifier
- Author(s): C.H. Oxley ; A.H. Peake ; R.H. Bennett
- Source: Electronics Letters, Volume 18, Issue 6, p. 260 –262
- DOI: 10.1049/el:19820179
- Type: Article
- + Show details - Hide details
-
p.
260
–262
(3)
The high-frequency S-parameters of a 0.3 μm-gate-length GaAs FET have been measured and compared with the device equivalent circuit model. From the data a Q-band single-stage low noise (3.1 dB) amplifier was designed.
Low-threshold current CW operation of multiple infil buried heterostructure 1.3 μm GaInAsP lasers
- Author(s): R. Plastow ; M. Harding ; I. Griffith ; A.C. Carter ; R.C. Goodfellow
- Source: Electronics Letters, Volume 18, Issue 6, p. 262 –263
- DOI: 10.1049/el:19820180
- Type: Article
- + Show details - Hide details
-
p.
262
–263
(2)
1.3 μm buried-heterostructure lasers with CW threshold currents as low as 19 mA have been fabricated using a multilayer infil structure. This technique significantly reduces the alignment tolerances necessary for low-threshold BH laser fabrication. Single transverse and longitudinal mode operation is observed for active layer widths below 3.5 μm.
Measurement of strain relief in an experimental optical fibre cable
- Author(s): R. Kashyap ; M.H. Reeve ; S. Hornung ; G.R. Bandurek ; J.E. Nevett
- Source: Electronics Letters, Volume 18, Issue 6, p. 263 –265
- DOI: 10.1049/el:19820181
- Type: Article
- + Show details - Hide details
-
p.
263
–265
(3)
Optical cables made by helically winding loose-tubed fibres around a central member can be designed to tolerate different amounts of axial strain before the fibres are strained. Here an optical technique is used to measure the strain relief achieved in an experimental cable incorporating fibres tubed under different conditions. The results are in good agreement with the strain relief predicted from the cable geometry.
Modification of ICCG method for application to semiconductor device simulators
- Author(s): T. Wada and R.L.M. Dang
- Source: Electronics Letters, Volume 18, Issue 6, p. 265 –266
- DOI: 10.1049/el:19820182
- Type: Article
- + Show details - Hide details
-
p.
265
–266
(2)
A high-speed iterative solution method for linear equations is proposed, which consists essentially of modifying the ICCG method to enable a processing of slightly asymmetrical coefficient matrices usually encountered in simulation problems pertaining to semiconductor devices. The new algorithm, applied to several two- and three-dimensional device simulators, has brought about a remarkable reduction in computation time.
Broadband circular disc microstrip antenna
- Author(s): J.M. Griffin and J.R. Forrest
- Source: Electronics Letters, Volume 18, Issue 6, p. 266 –269
- DOI: 10.1049/el:19820183
- Type: Article
- + Show details - Hide details
-
p.
266
–269
(4)
A technique for broadening the bandwidth of the circular disc microstrip radiating element is described. Theory based on a simple circuit model is introduced and comparison with experimental work is shown. From this model, a matching circuit is devised, the resulting element giving a bandwidth of 35% (to a VSWR of 1.5) near 8 GHz. This makes the circular disc element suitable for a wide range of radar and communications antenna systems.
Microwave diplexer using magnetostatic surface and backward volume waves
- Author(s): D.D. Stancil
- Source: Electronics Letters, Volume 18, Issue 6, p. 269 –270
- DOI: 10.1049/el:19820184
- Type: Article
- + Show details - Hide details
-
p.
269
–270
(2)
An experimental diplexer based on magnetostatic wave propagation in a tangentially magnetised thin film of YIG is reported. The diplexer function is obtained by using the fact that magnetostatic surface and backward volume waves propagate in contiguous but nominally nonoverlapping frequency bands.
Transmission characteristics of a cabled and jointed 30 km monomode optical fibre link
- Author(s): B.P. Nelson and S. Hornung
- Source: Electronics Letters, Volume 18, Issue 6, p. 270 –272
- DOI: 10.1049/el:19820185
- Type: Article
- + Show details - Hide details
-
p.
270
–272
(3)
The letter reports fibre loss measurements made on a 30 km cable link at different stages of manufacture. The dispersion characteristics of the fibres were measured and the results compared with theory.
Accurate model for effective dielectric constant of microstrip with validity up to millimetre-wave frequencies
- Author(s): M. Kirschning and R.H. Jansen
- Source: Electronics Letters, Volume 18, Issue 6, p. 272 –273
- DOI: 10.1049/el:19820186
- Type: Article
- + Show details - Hide details
-
p.
272
–273
(2)
A closed-form expression is presented for the effective dielectric constant of single microstrip lines which is valid with high accuracy up to mm-wave frequencies. The formula given has been designed for use in MIC and MMIC CAD programs as well as in the indirect measurement of substrate permittivities by resonance techniques.
Three-dimensional simulation of inverse narrow-channel effect
- Author(s): N. Shigyo ; M. Konaka ; R.L.M. Dang
- Source: Electronics Letters, Volume 18, Issue 6, p. 274 –275
- DOI: 10.1049/el:19820187
- Type: Article
- + Show details - Hide details
-
p.
274
–275
(2)
Based on a three-dimensional numerical analysis, it is shown that narrow-width MOSFETs of the BOX structure1 exhibit an ‘inverse’ narrow-channel effect whereby their threshold voltages become lower and lower with decreasing channel width. The phenomenon is attributed to a pronounced enhancement of the channel edge region due to a crowding of the fringing field.
Slotted antenna array excited by a coplanar waveguide
- Author(s): Aleksandar Nešić
- Source: Electronics Letters, Volume 18, Issue 6, p. 275 –276
- DOI: 10.1049/el:19820188
- Type: Article
- + Show details - Hide details
-
p.
275
–276
(2)
The letter gives a new concept of exciting slotted antenna arrays. There both the slots and the feeder are etched on the same side of the printed circuit board. A channel is cut perpendicular to the slots and a coplanar waveguide for exciting the slots is inserted into the channel. The concept has been experimentally verified on a model.
New frequency transformation for the accurate design of SC ladder filters
- Author(s): E. Hökenek ; U.W. Brugger ; G.S. Moschytz
- Source: Electronics Letters, Volume 18, Issue 6, p. 276 –278
- DOI: 10.1049/el:19820189
- Type: Article
- + Show details - Hide details
-
p.
276
–278
(3)
A new design technique is described for parasitic-insensitive switched-capacitor ladder filters. The proposed scheme is based on discrete-time signal-flow-graph techniques. The resulting networks exhibit low sensitivity with respect to element-value variations.
Comment: Spontaneous emission factor of narrow-stripe gain-guided diode lasers
- Author(s): E. Patzak
- Source: Electronics Letters, Volume 18, Issue 6, p. 278 –279
- DOI: 10.1049/el:19820190
- Type: Article
- + Show details - Hide details
-
p.
278
–279
(2)
Reply: Spontaneous emission factor of narrow-stripe gain-guided diode lasers
- Author(s): W. Streifer ; D.R. Scifres ; R.D. Burnham
- Source: Electronics Letters, Volume 18, Issue 6, page: 279 –279
- DOI: 10.1049/el:19820191
- Type: Article
- + Show details - Hide details
-
p.
279
(1)
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article
